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High-sensitive MIS structures with silicon nanocrystals grown via solid-state dewetting of silicon-on-insulator for solar cell and photodetector applications
Authors:
Mansour Aouassa,
Saud Algarni,
Ibrahim Althobaiti,
Luc Favre,
Isabelle Berbezier
Abstract:
This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the insulating SiO 2 oxide, for high performance solar cell and photodetector applications. The Si NCs are produced via the in situ solid-state dewetting of ultra-pure amorphous silicon-oninsulator (a-SOI) grown by solid source…
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This work reports an original method for the fabrication of Metal-Isulator-Semiconductor (MIS) structures with silicon nanocrystals (Si NCs) based active layers embedded in the insulating SiO 2 oxide, for high performance solar cell and photodetector applications. The Si NCs are produced via the in situ solid-state dewetting of ultra-pure amorphous silicon-oninsulator (a-SOI) grown by solid source molecular beam epitaxy (SSMBE). The size and density of Si NCs are precisely tuned by varying the deposited thickness of silicon. The morphological characterization carried out by using atomic force microscopy (AFM) and scanning electron microscopy (SEM) shows that the Si NCs have homogeneous size with welldefined spherical shape and densities up to ~10 12 /cm 2 (inversely proportional to the square of nominal a-Si thickness). The structural investigations by high resolution transmission electron microscopy (HR-TEM) show that the ultra-small Si NCs (with mean diameter ~7 nm) are monocrystalline and free of structural defects. The electrical measurements performed by current versus voltage (I-V) and photocurrent spectroscopies on the Si-NCs based MIS structures prove the efficiency of Si NCs to enhance the electrical conduction in MIS structures and to increase (x10 times) the photocurrent (i.e. at bias voltage V =-1 V) via the photogeneration of additional electron-hole pairs in the MIS structures. These results evidence that the Si NCs obtained by the combination of MBE growth and solid-state dewetting are perfectly suitable for the development of novel high performance optoelectronic devices compatible with the CMOS technology.
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Submitted 16 February, 2023;
originally announced February 2023.
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Shape relaxation of epitaxial mesa for finite-size strain-engineering
Authors:
Kennet D. R. Hannikainen,
Luc Favre,
Fabien Deprat,
Olivier Gourhant,
Isabelle Berbezier,
Jean-Noël Aqua
Abstract:
Silicon-Germanium (Si$_{1-x}$Ge$_x$) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channel regions to enhance the electron mobility. When reducing the gate lateral size, one of the major issues is the stress relaxation which results in a significant decrease in the electron mobility. We report a new morpholo…
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Silicon-Germanium (Si$_{1-x}$Ge$_x$) layers are commonly used as stressors in the gate of MOSFET devices. They are expected to introduce a beneficial stress in the drift and channel regions to enhance the electron mobility. When reducing the gate lateral size, one of the major issues is the stress relaxation which results in a significant decrease in the electron mobility. We report a new morphological evolution of a strained epitaxial SiGe nanolayer on a silicon gate (mesa) driven by strain inhomogeneity due to finite-size effects. Unlike the self-induced instability of strained films, this evolution arises here due to the elastic inhomogeneity originating from the free frontiers. We analyze the growth dynamics within the thermodynamic surface diffusion framework accounting for elasticity and capillarity, the former being solved in two dimensions thanks to the Airy formalism. The resulting dynamical equation is solved with a decomposition on eigenmodes, and reveals different developments depending upon the mesa geometric parameters. Mass transfer occurs towards the relaxed areas and creates a beading at the nanolayers free surface with either a W or V shape as a function of time and geometry. The evolution is then controlled by the proportions of the structure as well as its scale.
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Submitted 16 September, 2022;
originally announced September 2022.
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Titania-Based Spherical Mie Resonators Elaborated by High-Throughput Aerosol Spray: Single Object Investigation
Authors:
Simona Checcucci,
Thomas Bottein,
Jean-Benoit Claude,
Thomas Wood,
Magali Putero,
Luc Favre,
Massimo Gurioli,
Marco Abbarchi,
David Grosso
Abstract:
In the framework of photonics with all-dielectric nanoantennas, sub-micro-metric spheres can be exploited for a plethora of applications including vanishing back-scattering, enhanced directivity of a light emitter, beam steering, and large Purcell factors. Here, the potential of a high-throughput fabrication method based on aerosol-spray is shown to form quasi-perfect sub-micrometric spheres of po…
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In the framework of photonics with all-dielectric nanoantennas, sub-micro-metric spheres can be exploited for a plethora of applications including vanishing back-scattering, enhanced directivity of a light emitter, beam steering, and large Purcell factors. Here, the potential of a high-throughput fabrication method based on aerosol-spray is shown to form quasi-perfect sub-micrometric spheres of polycrystalline TiO 2 . Spectroscopic investigation of light scattering from individual particles reveals sharp resonances in agreement with Mie theory, neat structural colors, and a high directivity. Owing to the high permittivity and lossless material in use, this method opens the way toward the implementation of isotropic meta-materials and forward-directional sources with magnetic responses at visible and near-UV frequencies, not accessible with conventional Si- and Ge-based Mie resonators.
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Submitted 28 March, 2021;
originally announced March 2021.
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Hyperuniform monocrystalline structures by spinodal solid-state dewetting
Authors:
Marco Salvalaglio,
Mohammed Bouabdellaoui,
Monica Bollani,
Abdennacer Benali,
Luc Favre,
Jean-Benoit Claude,
Jerome Wenger,
Pietro de Anna,
Francesca Intonti,
Axel Voigt,
Marco Abbarchi
Abstract:
Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order renders them appealing for several applications, such as light management and topologically protected electronic states. These applications require scalable fabrication, which is hard to achieve with available top-down approac…
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Materials featuring anomalous suppression of density fluctuations over large length scales are emerging systems known as disordered hyperuniform. The underlying hidden order renders them appealing for several applications, such as light management and topologically protected electronic states. These applications require scalable fabrication, which is hard to achieve with available top-down approaches. Theoretically, it is known that spinodal decomposition can lead to disordered hyperuniform architectures. Spontaneous formation of stable patterns could thus be a viable path for the bottom-up fabrication of these materials. Here we show that mono-crystalline semiconductor-based structures, in particular Si$_{1-x}$Ge$_{x}$ layers deposited on silicon-on-insulator substrates, can undergo spinodal solid-state dewetting featuring correlated disorder with an effective hyperuniform character. Nano- to micro-metric sized structures targeting specific morphologies and hyperuniform character can be obtained, proving the generality of the approach and paving the way for technological applications of disordered hyperuniform metamaterials. Phase-field simulations explain the underlying non-linear dynamics and the physical origin of the emerging patterns.
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Submitted 18 July, 2020; v1 submitted 5 December, 2019;
originally announced December 2019.
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Role of Quantum Confinement in Luminescence Efficiency of Group IV Nanostructures
Authors:
E. G. Barbagiovanni,
D. J. Lockwood,
N. L. Rowell,
R. N. Costa Filho,
I. Berbezier,
G. Amiard,
L. Favre,
A. Ronda,
M. Faustini,
D. Grosso
Abstract:
Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while…
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Experimental results obtained previously for the photoluminescence efficiency (PL$_{eff}$) of Ge quantum dots (QDs) are theoretically studied. A $\log$-$\log$ plot of PL$_{eff}$ versus QD diameter ($D$) resulted in an identical slope for each Ge QD sample only when $E_{G}\sim (D^2+D)^{-1}$. We identified that above $D\approx$ 6.2 nm: $E_{G}\sim D^{-1}$ due to a changing effective mass (EM), while below $D\approx$ 4.6 nm: $E_{G}\sim D^{-2}$ due to electron/ hole confinement. We propose that as the QD size is initially reduced, the EM is reduced, which increases the Bohr radius and interface scattering until eventually pure quantum confinement effects dominate at small $D$.
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Submitted 22 January, 2014; v1 submitted 9 December, 2013;
originally announced December 2013.
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Theory of magnetic domains in uniaxial thin films
Authors:
F. Virot,
L. Favre,
R. Hayn,
M. D. Kuz'min
Abstract:
For uniaxial easy axis films, properties of magnetic domains are usually described within the Kittel model, which assumes that domain walls are much thinner than the domains. In this work we present a simple model that includes a proper description of the magnetostatic energy of domains and domain walls and also takes into account the interaction between both surfaces of the film. Our model descri…
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For uniaxial easy axis films, properties of magnetic domains are usually described within the Kittel model, which assumes that domain walls are much thinner than the domains. In this work we present a simple model that includes a proper description of the magnetostatic energy of domains and domain walls and also takes into account the interaction between both surfaces of the film. Our model describes the behavior of domain and wall widths as a function of film thickness, and is especially well suited for the strong stripe phase. We prove the existence of a critical value of magneto-crystalline anisotropy above which stripe domains exist for any film thickness and justify our model by comparison with exact results. The model is in good agreement with experimental data for hcp cobalt.
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Submitted 6 March, 2012; v1 submitted 28 February, 2012;
originally announced February 2012.
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Structural and magnetic properties of CoPt mixed clusters
Authors:
Luc Favre,
Véronique Dupuis,
Estela Bernstein,
Patrice Mélinon,
Alain Pérez,
Stefan Stanescu,
Thierry Epicier,
Jean-Paul Simon,
David Babonneau,
Jean-Marc Tonnerre
Abstract:
In this present work, we report a structural and magnetic study of mixed Co58Pt42 clusters. MgO, Nb and Si matrix can be used to embed clusters, avoiding any magnetic interactions between particles. Transmission Electron Microscopy (TEM) observations show that Co58Pt42 supported isolated clusters are about 2nm in diameter and crystallized in the A1 fcc chemically disordered phase. Grazing Incide…
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In this present work, we report a structural and magnetic study of mixed Co58Pt42 clusters. MgO, Nb and Si matrix can be used to embed clusters, avoiding any magnetic interactions between particles. Transmission Electron Microscopy (TEM) observations show that Co58Pt42 supported isolated clusters are about 2nm in diameter and crystallized in the A1 fcc chemically disordered phase. Grazing Incidence Small Angle X-ray Scattering (GISAXS) and Grazing Incidence Wide Angle X-ray Scattering (GIWAXS) reveal that buried clusters conserve these properties, interaction with matrix atoms being limited to their first atomic layers. Considering that 60% of particle atoms are located at surface, this interactions leads to a drastic change in magnetic properties which were investigated with conventional magnetometry and X-Ray Magnetic Circular Dichroïsm (XMCD). Magnetization and blocking temperature are weaker for clusters embedded in Nb than in MgO, and totally vanish in silicon as silicides are formed. Magnetic volume of clusters embedded in MgO is close to the crystallized volume determined by GIWAXS experiments. Cluster can be seen as a pure ferromagnetic CoPt crystallized core surrounded by a cluster-matrix mixed shell. The outer shell plays a predominant role in magnetic properties, especially for clusters embedded in niobium which have a blocking temperature 3 times smaller than clusters embedded in MgO.
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Submitted 12 May, 2006;
originally announced May 2006.
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Magnetic anisotropy of $Co_x Pt_{1-x}$ clusters embedded in matrix: Influences of the cluster chemical composition and the matrix nature
Authors:
Stanislas Rohart,
Cécile Raufast,
Luc Favre,
Estela Bernstein,
Edgar Bonet,
Véronique Dupuis
Abstract:
We report on the magnetic properties of Co$\_x$Pt$\_{1-x}$ clusters embedded in various matrices. Using a careful analysis of magnetization curves and ZFC susceptibility measurements, we determine the clusters magnetic anisotropy energy (MAE) and separate the surface and volume contributions. By comparing different chemical compositions, we show that a small amount of Pt (15%) induces an importa…
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We report on the magnetic properties of Co$\_x$Pt$\_{1-x}$ clusters embedded in various matrices. Using a careful analysis of magnetization curves and ZFC susceptibility measurements, we determine the clusters magnetic anisotropy energy (MAE) and separate the surface and volume contributions. By comparing different chemical compositions, we show that a small amount of Pt (15%) induces an important increase in the volume anisotropy with respect to pure Co clusters, even in chemically disordered fcc clusters. Comparing the measurements of clusters embedded in Nb and MgO matrices, we show that the oxide matrix induces an important increase of the surface MAE attributed to the formation of an antiferromagnetic CoO shell around the clusters.
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Submitted 4 May, 2006;
originally announced May 2006.
