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Radio frequency single electron transmission spectroscopy of a semiconductor Si/SiGe quantum dot
Authors:
I. Fattal,
J. Van Damme,
B. Raes,
C. Godfrin,
G. Jaliel,
K. Chen,
T. Van Caekenberghe,
A. Loenders,
S. Kubicek,
S. Massar,
Y. Canvel,
J. Jussot,
Y. Shimura,
R. Loo,
D. Wan,
M. Mongillo,
K. De Greve
Abstract:
Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolit…
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Rapid single shot spin readout is a key ingredient for fault tolerant quantum computing with spin qubits. An RF-SET (radio-frequency single electron transistor) is predominantly used as its the readout timescale is far shorter than the spin decoherence time. In this work, we experimentally demonstrate a transmission-based RF-SET using a multi-module semiconductor-superconductor assembly. A monolithically integrated SET placed next to a double quantum dot in a Si/SiGe heterostructure is wire-bonded to a superconducting niobium inductor forming the impedance-transforming network. Compared to RF reflectometry, the proposed set-up is experimentally simpler without the need for directional couplers. Read-out performance is benchmarked by the signal-to-noise (SNR) of a dot-reservoir transition (DRT) and an interdot charge transition (ICT) in the double quantum dot near the SET as a function of RF power and integration time. The minimum integration time for unitary SNR is found to be 100 ns for ICT and 300 ns for DRT. The obtained minimum integration times are comparable to the state of the art in conventional RF reflectometry set-ups. Furthermore, we study the turn-on properties of the RF-SET to investigate capacitive shifts and RF losses. Understanding these effects are crucial for further optimisations of the impedance transforming network as well as the device design to assist RF read-out. This new RF read-out scheme also shows promise for multiplexing spin-qubit readout and further studies on rapid charge dynamics in quantum dots.
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Submitted 7 April, 2025;
originally announced April 2025.
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A trilinear quantum dot architecture for semiconductor spin qubits
Authors:
R. Li,
V. Levajac,
C. Godfrin,
S. Kubicek,
G. Simion,
B. Raes,
S. Beyne,
I. Fattal,
A. Loenders,
W. De Roeck,
M. Mongillo,
D. Wan,
K. De Greve
Abstract:
Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles the structure of conventional transistors. Since classical semiconductor manufacturing technology has reached an unprecedented level of maturity, reliably mass-producing CMOS chips with hundreds of billions of component…
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Semiconductor quantum dot spin qubits hold significant potential for scaling to millions of qubits for practical quantum computing applications, as their structure highly resembles the structure of conventional transistors. Since classical semiconductor manufacturing technology has reached an unprecedented level of maturity, reliably mass-producing CMOS chips with hundreds of billions of components, conventional wisdom dictates that leveraging CMOS technologies for quantum dot qubits can result in upscaled quantum processors with thousands or even millions of interconnected qubits. However, the interconnect requirements for quantum circuits are very different from those for classical circuits, where for each qubit individual control and readout wiring could be needed. Although significant developments have been demonstrated on small scale systems, qubit numbers remain limited, to a large extent due to the lack of scalable qubit interconnect schemes. Here, we present a trilinear quantum dot array that is simple in physical layout while allowing individual wiring to each quantum dot. By means of electron shuttling, the trilinear architecture provides qubit connectivity that is equivalent to or even surpasses that of 2D square lattice. Assuming the current qubit fidelities of small-scale devices can be extrapolated to large-scale arrays, medium-length shuttling arrays on the order of tens of microns would allow million-scale qubit systems, while maintaining manageable overheads. We also present a scalable control scheme, where the qubit chip is 3D-integrated with a low-power switch-based cryoCMOS circuit for parallel qubit operation with limited control inputs. As our trilinear quantum dot array is fully compatible with existing semiconductor technologies, this qubit architecture represents one possible framework for future research and development of large-scale spin qubit systems.
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Submitted 20 March, 2025; v1 submitted 29 January, 2025;
originally announced January 2025.
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Statistical Analysis of Spurious Dot Formation in SiMOS Single Electron Transistors
Authors:
Kuan-Chu Chen,
Clement Godfrin,
George Simion,
Imri Fattal,
Stefan Kubicek,
Sofie Beyne,
Bart Raes,
Arne Loenders,
Kuo-Hsing Kao,
Danny Wan,
Kristiaan De Greve
Abstract:
The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we analyzed SETs with three different oxide thicknesses: 8 nm, 12 nm and 20 nm. By combining spurious dot triangulation cryo-measurement with simulations of strai…
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The spatial distribution of spurious dots in SiMOS single-electron transistors (SETs), fabricated on an industrial 300 mm process line, has been statistically analyzed. To have a deeper understanding of the origin of these spurious dots, we analyzed SETs with three different oxide thicknesses: 8 nm, 12 nm and 20 nm. By combining spurious dot triangulation cryo-measurement with simulations of strain, gate bias, and location of the electron wave function, we demonstrate that most spurious dots are formed through the combined effects of strain and gate bias, leading to variations in the conduction band energy. Despite the similar thermal expansion coefficients of polycrystalline silicon gates and single-crystalline silicon substrates, strain remains a crucial factor in spurious dots formation. This learning can be use to optimize the device design and the oxide thickness, to reduce the density of spurious dot while keeping quantum dot tunability.
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Submitted 28 October, 2024; v1 submitted 24 October, 2024;
originally announced October 2024.
