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Electronic bandstructure and optical gain of lattice matched III-V dilute nitride bismide quantum wells for 1.55 $μ$m optical communication systems
Authors:
W. J. Fan,
Sumanta Bose,
D. H Zhang
Abstract:
Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $μ$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of Nitrogen (N) helps to attain lat…
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Dilute nitride bismide GaNBiAs is a potential semiconductor alloy for near- and mid-infrared applications, particularly in 1.55 $μ$m optical communication systems. Incorporating dilute amounts of Bismuth (Bi) into GaAs reduces the effective bandgap rapidly, while significantly increasing the spin-orbit-splitting energy. Additional incorporation of dilute amounts of Nitrogen (N) helps to attain lattice matching with GaAs, while providing a route for flexible bandgap tuning. Here we present a study of the electronic bandstructure and optical gain of the lattice matched GaN$_x$Bi$_y$As$_{1-x-y}$/GaAs quaternary alloy quantum well (QW) based on the 16-band k$\cdot$p model. We have taken into consideration the interactions between the N and Bi impurity states with the host material based on the band anticrossing (BAC) and valence band anticrossing (VBAC) model. The optical gain calculation is based on the density matrix theory. We have considered different lattice matched GaNBiAs QW cases and studied their energy dispersion curves, optical gain spectrum, maximum optical gain and differential gain; and compared their performances based on these factors. The thickness and composition of these QWs were varied in order to keep the emission peak fixed at 1.55 $μ$m. The well thickness has an effect on the spectral width of the gain curves. On the other hand, a variation in the injection carrier density has different effects on the maximum gain and differential gain of QWs of varying thicknesses. Among the cases studied, we found that the 6.3 nm thick GaN$_3$Bi$_{5.17}$As$_{91.83}$ lattice matched QW was most suited for 1.55 $μ$m (0.8 eV) GaAs-based photonic applications.
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Submitted 21 June, 2017;
originally announced June 2017.
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Sub 100-ps dynamics of the anomalous Hall effect at THz frequencies
Authors:
T. J. Huisman,
R. V. Mikhaylovskiy,
A. Tsukamoto,
L. Ma,
W. J. Fan,
S. M. Zhou,
Th. Rasing,
A. V. Kimel
Abstract:
We report about the anomalous Hall effect in 4f 3d metallic alloys measured using terahertz time-domain spectroscopy. The strength of the observed terahertz spin-dependent transport phenomenon is in good agreement with expectations based on electronic transport measurements. Employing this effect, we succeeded to reveal ultrafast dynamics of the anomalous Hall effect which accompanies the sub-100…
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We report about the anomalous Hall effect in 4f 3d metallic alloys measured using terahertz time-domain spectroscopy. The strength of the observed terahertz spin-dependent transport phenomenon is in good agreement with expectations based on electronic transport measurements. Employing this effect, we succeeded to reveal ultrafast dynamics of the anomalous Hall effect which accompanies the sub-100 picosecond optically induced magnetization reversal in a GdFeCo alloy. The experiments demonstrate the ability to control currents at terahertz frequencies in spintronic devices magnetically and ultrafast.
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Submitted 17 November, 2016;
originally announced November 2016.
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Atomistic origin of exchange anisotropy in $γ$-IrMn$_3$-CoFe bilayers
Authors:
Sarah Jenkins,
Wei Jia Fan,
Roxana Gaina,
Roy W Chantrell,
Timothy Klemmer,
Richard F L Evans
Abstract:
The exchange interaction determines the ferromagnetic (FM) or antiferromagnetic (AFM) ordering of atomic spins. When ferromagnets and antiferromagnets are coupled together, they often exhibit the exchange bias effect, a unidirectional interface exchange field causing a shift of the magnetic hysteresis loop. The effective magnitude of this interface exchange field is at most a few percent of the bu…
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The exchange interaction determines the ferromagnetic (FM) or antiferromagnetic (AFM) ordering of atomic spins. When ferromagnets and antiferromagnets are coupled together, they often exhibit the exchange bias effect, a unidirectional interface exchange field causing a shift of the magnetic hysteresis loop. The effective magnitude of this interface exchange field is at most a few percent of the bulk exchange, arising from pinned interfacial spins in the antiferromagnet. The pinned spins are known to comprise a small fraction of the total number of interface spins, yet their exact nature and physical origin has so far been elusive. Here we show that in the technologically important $γ- IrMn_3/CoFe$ structure the pinned interface spins are in fact delocalised over the whole interface layer. The pinned spins arise from the small imbalance of the number of spins in each magnetic sublattice in the antiferromagnet due to the natural atomic disorder. These pinned spins are strongly coupled to the bulk antiferromagnet explaining their remarkable stability. Moreover, we find that the ferromagnet strongly distorts the interface spin structure of the antiferromagnet, causing a large reversible interface magnetisation that does not contribute to exchange bias. The unexpected delocalised nature of the pinned interface spins explains both their small number and their stability, uncovering the mysterious microscopic origin of the exchange bias effect.
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Submitted 15 October, 2020; v1 submitted 26 October, 2016;
originally announced October 2016.
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Spin orbit coupling controlled spin pumping effect
Authors:
L. Ma,
H. A. Zhou,
L. Wang,
X. L. Fan,
W. J. Fan,
D. S. Xue,
K. Xia,
G. Y. Guo,
S. M. Zhou
Abstract:
Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current devices with spin pumping technique. We show that all three parameters can be tuned significantly by the spin orbit coupling (SOC) strength of the NM layer in syst…
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Effective spin mixing conductance (ESMC) across the nonmagnetic metal (NM)/ferromagnet interface, spin Hall conductivity (SHC) and spin diffusion length (SDL) in the NM layer govern the functionality and performance of pure spin current devices with spin pumping technique. We show that all three parameters can be tuned significantly by the spin orbit coupling (SOC) strength of the NM layer in systems consisting of ferromagnetic insulating Y3Fe5O12 layer and metallic Pd1-xPtx layer. Surprisingly, the ESMC is observed to increase significantly with x changing from 0 to 1.0. The SHC in PdPt alloys, dominated by the intrinsic term, is enhanced notably with increasing x. Meanwhile, the SDL is found to decrease when Pd atoms are replaced by heavier Pt atoms, validating the SOC induced spin flip scattering model in polyvalent PdPt alloys. The capabilities of both spin current generation and spin charge conversion are largely heightened via the SOC. These findings highlight the multifold tuning effects of the SOC in developing the new generation of spintronic devices.
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Submitted 17 September, 2015; v1 submitted 3 August, 2015;
originally announced August 2015.
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Atomistic simulation of sub-nanosecond non-equilibrium field cooling processes for magnetic data storage applications
Authors:
R. F. L. Evans,
W. J. Fan
Abstract:
Thermally assisted magnetic writing is an important technology utilizing temperature dependent magnetic properties to enable orientation of a magnetic data storage medium. Using an atomistic spin model we study non-equilibrium field cooled magnetization processes on sub-nanosecond timescales required for device applications. We encapsulate the essential physics of the process in a TRM-T curve and…
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Thermally assisted magnetic writing is an important technology utilizing temperature dependent magnetic properties to enable orientation of a magnetic data storage medium. Using an atomistic spin model we study non-equilibrium field cooled magnetization processes on sub-nanosecond timescales required for device applications. We encapsulate the essential physics of the process in a TRM-T curve and show that for fast timescales heating to the Curie temperature is necessary where the magnetic relaxation time is shortest. Furthermore we demonstrate the requirement for large magnetic fields to achieve a high thermoremanent magnetization necessary for fast recording or data rates.
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Submitted 25 September, 2014;
originally announced September 2014.
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Atomistic calculation of the thickness and temperature dependence of exchange coupling through a dilute magnetic oxide
Authors:
R. F. L. Evans,
Q. Coopman,
S. Devos,
W. J. Fan,
O. Hovorka,
R. W. Chantrell
Abstract:
The exchange coupling of two magnetic layers via a diffuse oxide interlayer is studied with an atomistic spin model. We investigate the effect of magnetic concentration and oxide layer thickness on the effective exchange coupling strength and find an exponential dependence of the coupling strength on the oxide thickness without the need for magnetic pinholes. Furthermore we show that exchange coup…
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The exchange coupling of two magnetic layers via a diffuse oxide interlayer is studied with an atomistic spin model. We investigate the effect of magnetic concentration and oxide layer thickness on the effective exchange coupling strength and find an exponential dependence of the coupling strength on the oxide thickness without the need for magnetic pinholes. Furthermore we show that exchange coupling has a strong temperature dependence which is significant for the reversal dynamics during heat assisted magnetic recording.
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Submitted 24 June, 2014;
originally announced June 2014.
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Galvanomagnetic effects and manipulation of antiferromagnetic interfacial uncompensated magnetic moment in exchange-biased bilayers
Authors:
X. Zhou,
L. Ma,
Z. Shi,
W. J. Fan,
R. F. L. Evans,
R. W. Chantrell,
S. Mangin,
H. W. Zhang,
S. M. Zhou
Abstract:
In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotationa…
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In this work, IrMn$_{3}$/insulating-Y$_{3}$Fe$_{5}$O$_{12}$ exchange-biased bilayers are studied. The behavior of the net magnetic moment $Δm_{AFM}$ in the antiferromagnet is directly probed by anomalous and planar Hall effects, and anisotropic magnetoresistance. The $Δm_{AFM}$ is proved to come from the interfacial uncompensated magnetic moment. We demonstrate that the exchange bias and rotational hysteresis are induced by the irreversible switching of the $Δm_{AFM}$. In the training effect, the $Δm_{AFM}$ changes continuously. This work highlights the fundamental role of the $Δm_{AFM}$ in the exchange bias and facilitates the manipulation of antiferromagnetic spintronic devices.
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Submitted 7 October, 2014; v1 submitted 1 March, 2014;
originally announced March 2014.
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Atomistic spin model simulations of magnetic nanomaterials
Authors:
Richard F. L. Evans,
Weijia J. Fan,
Phanwadee Chureemart,
Thomas A. Ostler,
Matthew O. A. Ellis,
Roy W. Chantrell
Abstract:
Atomistic modelling of magnetic materials provides unprecedented detail about the underlying physical processes that govern their macroscopic properties, and allows the simulation of complex effects such as surface anisotropy, ultrafast laser-induced spin dynamics, exchange bias, and mi- crostructural effects. Here we present the key methods used in atomistic spin models which are then applied to…
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Atomistic modelling of magnetic materials provides unprecedented detail about the underlying physical processes that govern their macroscopic properties, and allows the simulation of complex effects such as surface anisotropy, ultrafast laser-induced spin dynamics, exchange bias, and mi- crostructural effects. Here we present the key methods used in atomistic spin models which are then applied to a range of magnetic problems. We detail the parallelisation strategies used which enable the routine simulation of extended systems with full atomistic resolution.
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Submitted 3 December, 2013; v1 submitted 23 October, 2013;
originally announced October 2013.
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Pseudo-potential Band Structure Calculation of InSb Ultra-thin Films and its application to assess the n-Metal-Oxide-Semiconductor Transistor Performance
Authors:
Zhen Gang Zhu,
Tony Low,
Ming Fu Li,
Wei Jun Fan,
P. Bai,
D. L. Kwong,
G. Samudra
Abstract:
Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Γ$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtain…
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Band structure of InSb thin films with $<100>$ surface orientation is calculated using empirical pseudopotential method (EPM) to evaluate the performance of nanoscale devices using InSb substrate. Contrary to the predictions by simple effective mass approximation methods (EMA), our calculation reveals that $Γ$ valley is still the lowest lying conduction valley. Based on EPM calculations, we obtained the important electronic structure and transport parameters, such as effective mass and valley energy minimum, of InSb thin film as a function of film thickness. Our calculations reveal that the 'effective mass' of $Γ$ valley electrons increases with the scaling down of the film thickness. We also provide an assessment of nanoscale InSb thin film devices using Non-Equilibrium Green's Function under the effective mass framework in the ballistic regime.
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Submitted 20 September, 2011;
originally announced September 2011.
