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Large effective mass and interaction-enhanced Zeeman splitting of $K$-valley electrons in MoSe$_2$
Authors:
Stefano Larentis,
Hema C. P. Movva,
Babak Fallahazad,
Kyoughwan Kim,
Armad Behroozi,
Takashi Taniguchi,
Kenji Watanabe,
Sanjay K. Banerjee,
Emanuel Tutuc
Abstract:
We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at fil…
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We study the magnetotransport of high-mobility electrons in monolayer and bilayer MoSe$_2$, which show Shubnikov-de Haas (SdH) oscillations and quantum Hall states in high magnetic fields. An electron effective mass of 0.8$m_e$ is extracted from the SdH oscillations' temperature dependence; $m_e$ is the bare electron mass. At a fixed electron density the longitudinal resistance shows minima at filling factors (FFs) that are either predominantly odd, or predominantly even, with a parity that changes as the density is tuned. The SdH oscillations are insensitive to an in-plane magnetic field, consistent with an out-of-plane spin orientation of electrons at the $K$-point. We attribute the FFs parity transitions to an interaction enhancement of the Zeeman energy as the density is reduced, resulting in an increased Zeeman-to-cyclotron energy ratio.
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Submitted 16 May, 2018; v1 submitted 26 April, 2018;
originally announced April 2018.
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Tunable $Γ- K$ Valley Populations in Hole-Doped Trilayer WSe$_2$
Authors:
Hema C. P. Movva,
Timothy Lovorn,
Babak Fallahazad,
Stefano Larentis,
Kyounghwan Kim,
Takashi Taniguchi,
Kenji Watanabe,
Sanjay K. Banerjee,
Allan H. MacDonald,
Emanuel Tutuc
Abstract:
We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $Γ$ valleys, with effective masses 0.5$m_e$ and $1.2m_e$, respectively; $m_e$ is the bare electron mass. At a fixed total hole density, an applied transverse elec…
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We present a combined experimental and theoretical study of valley populations in the valence bands of trilayer WSe$_2$. Shubnikov$-$de Haas oscillations show that trilayer holes populate two distinct subbands associated with the $K$ and $Γ$ valleys, with effective masses 0.5$m_e$ and $1.2m_e$, respectively; $m_e$ is the bare electron mass. At a fixed total hole density, an applied transverse electric field transfers holes from $Γ$ orbitals to $K$ orbitals. We are able to explain this behavior in terms of the larger layer polarizability of the $K$ orbital subband.
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Submitted 10 January, 2018;
originally announced January 2018.
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Coherent Interlayer Tunneling and Negative Differential Resistance with High Current Density in Double Bilayer Graphene-WSe2 Heterostructures
Authors:
G. William Burg,
Nitin Prasad,
Babak Fallahazad,
Amithraj Valsaraj,
Kyounghwan Kim,
Takashi Taniguchi,
Kenji Watanabe,
Qingxiao Wang,
Moon J. Kim,
Leonard F. Register,
Emanuel Tutuc
Abstract:
We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling…
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We demonstrate gate-tunable resonant tunneling and negative differential resistance between two rotationally aligned bilayer graphene sheets separated by bilayer WSe2. We observe large interlayer current densities of 2 uA/um2 and 2.5 uA/um2, and peak-to-valley ratios approaching 4 and 6 at room temperature and 1.5 K, respectively, values that are comparable to epitaxially grown resonant tunneling heterostructures. An excellent agreement between theoretical calculations using a Lorentzian spectral function for the two-dimensional (2D) quasiparticle states, and the experimental data indicates that the interlayer current stems primarily from energy and in-plane momentum conserving 2D-2D tunneling, with minimal contributions from inelastic or non-momentum-conserving tunneling. We demonstrate narrow tunneling resonances with intrinsic half-widths of 4 and 6 meV at 1.5 K and 300 K, respectively.
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Submitted 25 June, 2017;
originally announced June 2017.
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Tunable Moiré Bands and Strong Correlations in Small-Twist-Angle Bilayer Graphene
Authors:
Kyounghwan Kim,
Ashley DaSilva,
Shengqiang Huang,
Babak Fallahazad,
Stefano Larentis,
Takashi Taniguchi,
Kenji Watanabe,
Brian J. LeRoy,
Allan H. MacDonald,
Emanuel Tutuc
Abstract:
According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moiré crystals with accurately controlled twist angles smaller than 1 degree and studied their properties using scanning probe microsco…
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According to electronic structure theory, bilayer graphene is expected to have anomalous electronic properties when it has long-period moiré patterns produced by small misalignments between its individual layer honeycomb lattices. We have realized bilayer graphene moiré crystals with accurately controlled twist angles smaller than 1 degree and studied their properties using scanning probe microscopy and electron transport. We observe conductivity minima at charge neutrality, satellite gaps that appear at anomalous carrier densities for twist angles smaller than 1 degree, and tunneling densities-of-states that are strongly dependent on carrier density. These features are robust up to large transverse electric fields. In perpendicular magnetic fields, we observe the emergence of a Hofstadter butterfly in the energy spectrum, with four-fold degenerate Landau levels, and broken symmetry quantum Hall states at filling factors 1, 2, 3. These observations demonstrate that at small twist angles, the electronic properties of bilayer graphene moiré crystals are strongly altered by electron-electron interactions.
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Submitted 2 March, 2017;
originally announced March 2017.
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Density-Dependent Quantum Hall States and Zeeman Splitting in Monolayer and Bilayer WSe$_2$
Authors:
Hema C. P. Movva,
Babak Fallahazad,
Kyounghwan Kim,
Stefano Larentis,
Takashi Taniguchi,
Kenji Watanabe,
Sanjay K. Banerjee,
Emanuel Tutuc
Abstract:
We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\times10^{12}$ cm$^{-2}$. The QHSs sequence is insensitive to the transverse electric field, and tilted magnetic field measurements reveal an insensitivit…
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We report a study of the quantum Hall states (QHSs) sequence of holes in mono- and bilayer WSe$_2$. The QHSs sequence transitions between predominantly even and predominantly odd filling factors as the hole density is tuned in the range $1.6 - 12\times10^{12}$ cm$^{-2}$. The QHSs sequence is insensitive to the transverse electric field, and tilted magnetic field measurements reveal an insensitivity of the QHSs sequence to the in-plane magnetic field, evincing that the hole spin is locked perpendicular to the WSe$_2$ plane. These observations imply that the QHSs sequence is controlled by the Zeeman-to-cyclotron energy ratio, which remains constant as a function of perpendicular magnetic field at a fixed carrier density, but changes as a function of density due to strong electron-electron interaction.
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Submitted 16 February, 2017;
originally announced February 2017.
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Shubnikov-de Haas oscillations of high mobility holes in monolayer and bilayer WSe$_2$: Landau level degeneracy, effective mass, and negative compressibility
Authors:
Babak Fallahazad,
Hema C. P. Movva,
Kyounghwan Kim,
Stefano Larentis,
Takashi Taniguchi,
Kenji Watanabe,
Sanjay K. Banerjee,
Emanuel Tutuc
Abstract:
We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform a…
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We study the magnetotransport properties of high mobility holes in monolayer and bilayer WSe$_2$, which display well defined Shubnikov-de Haas (SdH) oscillations, and quantum Hall states (QHSs) in high magnetic fields. In both mono and bilayer WSe$_2$, the SdH oscillations and the QHSs occur predominantly at even filling factors, evincing a two-fold Landau level degeneracy. The Fourier transform analysis of the SdH oscillations in bilayer WSe$_2$ reveal the presence of two subbands localized in the top or the bottom layer, as well as negative compressibility. From the temperature dependence of the SdH oscillations we determine a hole effective mass of $0.45m_{0}$ for both mono and bilayer WSe$_2$.
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Submitted 2 February, 2016;
originally announced February 2016.
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High-Mobility Holes in Dual-Gated WSe$_2$ Field-Effect Transistors
Authors:
Hema C. P. Movva,
Amritesh Rai,
Sangwoo Kang,
Kyounghwan Kim,
Babak Fallahazad,
Takashi Taniguchi,
Kenji Watanabe,
Emanuel Tutuc,
Sanjay K. Banerjee
Abstract:
We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe$_2$ results in $p$-FETs with $I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down to cryogenic tem…
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We demonstrate dual-gated $p$-type field-effect transistors (FETs) based on few-layer tungsten diselenide (WSe$_2$) using high work-function platinum source/drain contacts, and a hexagonal boron nitride top-gate dielectric. A device topology with contacts underneath the WSe$_2$ results in $p$-FETs with $I_{ON}$/$I_{OFF}$ ratios exceeding 10$^7$, and contacts that remain Ohmic down to cryogenic temperatures. The output characteristics show current saturation and gate tunable negative differential resistance. The devices show intrinsic hole mobilities around 140 cm$^2$/Vs at room temperature, and approaching 4,000 cm$^2$/Vs at 2 K. Temperature-dependent transport measurements show a metal-insulator transition, with an insulating phase at low densities, and a metallic phase at high densities. The mobility shows a strong temperature dependence consistent with phonon scattering, and saturates at low temperatures, possibly limited by Coulomb scattering, or defects.
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Submitted 13 September, 2015;
originally announced September 2015.
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Gate-Tunable Resonant Tunneling in Double Bilayer Graphene Heterostructures
Authors:
Babak Fallahazad,
Kayoung Lee,
Sangwoo Kang,
Jiamin Xue,
Stefano Larentis,
Christopher Corbet,
Kyounghwan Kim,
Hema C. P. Movva,
Takashi Taniguchi,
Kenji Watanabe,
Leonard F. Register,
Sanjay K. Banerjee,
Emanuel Tutuc
Abstract:
We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials…
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We demonstrate gate-tunable resonant tunneling and negative differential resistance in the interlayer current-voltage characteristics of rotationally aligned double bilayer graphene heterostructures separated by hexagonal boron-nitride (hBN) dielectric. An analysis of the heterostructure band alignment using individual layer densities, along with experimentally determined layer chemical potentials indicates that the resonance occurs when the energy bands of the two bilayer graphene are aligned. We discuss the tunneling resistance dependence on the interlayer hBN thickness, as well as the resonance width dependence on mobility and rotational alignment.
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Submitted 9 December, 2014;
originally announced December 2014.
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Band offset and negative compressibility in graphene-MoS2 heterostructures
Authors:
S. Larentis,
J. R. Tolsma,
B. Fallahazad,
D. C. Dillen,
K. Kim,
A. H. MacDonald,
E. Tutuc
Abstract:
We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch which signals the onset of MoS2 conduction band population. Surprisingly, the carrier density in graphene decreases with gate bias once MoS2 is populated, demonstrating negative compressibility in MoS2. We are…
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We use electron transport to characterize monolayer graphene - multilayer MoS2 heterostructures. Our samples show ambipolar characteristics and conductivity saturation on the electron branch which signals the onset of MoS2 conduction band population. Surprisingly, the carrier density in graphene decreases with gate bias once MoS2 is populated, demonstrating negative compressibility in MoS2. We are able to interpret our measurements quantitatively by accounting for disorder and using the random phase approximation (RPA) for the exchange and correlation energies of both Dirac and parabolic-band two-dimensional electron gases. This interpretation allows us to extract the energetic offset between the conduction band edge of MoS2 and the Dirac point of graphene.
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Submitted 15 August, 2016; v1 submitted 9 February, 2014;
originally announced February 2014.
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Chemical Potential and Quantum Hall Ferromagnetism in Bilayer Graphene
Authors:
Kayoung Lee,
Babak Fallahazad,
Jiamin Xue,
David C. Dillen,
Kyounghwan Kim,
Takashi Taniguchi,
Kenji Watanabe,
Emanuel Tutuc
Abstract:
Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct…
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Bilayer graphene has a unique electronic structure influenced by a complex interplay between various degrees of freedom. We probe its chemical potential using double bilayer graphene heterostructures, separated by a hexagonal boron nitride dielectric. The chemical potential has a non-linear carrier density dependence, and bears signatures of electron-electron interactions. The data allow a direct measurement of the electric field-induced bandgap at zero magnetic field, the orbital Landau level (LLs) energies, and the broken symmetry quantum Hall state gaps at high magnetic fields. We observe spin-to-valley polarized transitions for all half-filled LLs, as well as emerging phases at filling factors ν= 0 and ν= +-2. Furthermore, the data reveal interaction-driven negative compressibility and electron-hole asymmetry in N = 0, 1 LLs.
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Submitted 7 July, 2014; v1 submitted 3 January, 2014;
originally announced January 2014.
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Field-effect transistors and intrinsic mobility in ultra-thin MoSe2 layers
Authors:
S. Larentis,
B. Fallahazad,
E. Tutuc
Abstract:
We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface.…
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We report the fabrication of back-gated field-effect transistors (FETs) using ultra-thin, mechanically exfoliated MoSe2 flakes. The MoSe2 FETs are n-type and possess a high gate modulation, with On/Off ratios larger than 106. The devices show asymmetric characteristics upon swapping the source and drain, a finding explained by the presence of Schottky barriers at the metal contact/MoSe2 interface. Using four-point, back-gated devices we measure the intrinsic conductivity and mobility of MoSe2 as a function of gate bias, and temperature. Samples with a room temperature mobility of ~50 cm2/V.s show a strong temperature dependence, suggesting phonons are a dominant scattering mechanism.
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Submitted 13 November, 2012;
originally announced November 2012.
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Quantum Hall Effect in Bernal Stacked and Twisted Bilayer Graphene Grown on Cu by Chemical Vapor Deposition
Authors:
Babak Fallahazad,
Yufeng Hao,
Kayoung Lee,
Seyoung Kim,
R. S. Ruoff,
E. Tutuc
Abstract:
We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors $ν=4, 8, 12$ consistent with a Bern…
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We examine the quantum Hall effect in bilayer graphene grown on Cu substrates by chemical vapor deposition. Spatially resolved Raman spectroscopy suggests a mixture of Bernal (A-B) stacked and rotationally faulted (twisted) domains. Magnetotransport measurements performed on bilayer domains with a wide 2D band reveal quantum Hall states (QHSs) at filling factors $ν=4, 8, 12$ consistent with a Bernal stacked bilayer, while magnetotransport measurements in bilayer domains defined by a narrow 2D band show a superposition of QHSs of two independent monolayers. The analysis of the Shubnikov-de Haas oscillations measured in twisted graphene bilayers provides the carrier density in each layer as a function of the gate bias and the inter-layer capacitance.
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Submitted 13 May, 2012; v1 submitted 13 February, 2012;
originally announced February 2012.
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Direct Measurement of the Fermi Energy in Graphene Using a Double Layer Structure
Authors:
Seyoung Kim,
Insun Jo,
D. C. Dillen,
D. A. Ferrer,
B. Fallahazad,
Z. Yao,
S. K. Banerjee,
E. Tutuc
Abstract:
We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacin…
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We describe a technique which allows a direct measurement of the relative Fermi energy in an electron system using a double layer structure, where graphene is one of the two layers. We illustrate this method by probing the Fermi energy as a function of density in a graphene monolayer, at zero and in high magnetic fields. This technique allows us to determine the Fermi velocity, Landau level spacing, and Landau level broadening in graphene. We find that the N=0 Landau level broadening is larger by comparison to the broadening of upper and lower Landau levels.
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Submitted 22 December, 2011;
originally announced December 2011.
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Dielectric Thickness Dependence of Carrier Mobility in Graphene with HfO2 Top Dielectric
Authors:
Babak Fallahazad,
Seyoung Kim,
Luigi Colombo,
Emanuel Tutuc
Abstract:
We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon…
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We investigate the carrier mobility in mono- and bi-layer graphene with a top HfO2 dielectric, as a function of the HfO2 film thickness and temperature. The results show that the carrier mobility decreases during the deposition of the first 2-4 nm of top dielectric and remains constant for thicker layers. The carrier mobility shows a relatively weak dependence on temperature indicating that phonon scattering does not play a dominant role in controlling the carrier mobility. The data strongly suggest that fixed charged impurities located in close proximity to the graphene are responsible for the mobility degradation.
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Submitted 5 October, 2010;
originally announced October 2010.
