Showing 1–32 of 32 results for author: Falkovsky, L A

Structure and electron bands of phosphorus allotropes

Authors: L. A. Falkovsky

Abstract: The small difference between the rhombohedral phosphorus lattice ($A$-7 phase) and the simple cubic phase as well as between phosphorene and the cubic structure is used in order to construct their quasiparticle band dispersion. We exploit the Peierls idea of the Brillouin zone doubling, which has been previously employed in consideration of semimetals of the $V$ period and $IV$--$VI$ semiconductor… ▽ More The small difference between the rhombohedral phosphorus lattice ($A$-7 phase) and the simple cubic phase as well as between phosphorene and the cubic structure is used in order to construct their quasiparticle band dispersion. We exploit the Peierls idea of the Brillouin zone doubling, which has been previously employed in consideration of semimetals of the $V$ period and $IV$--$VI$ semiconductors. In the common framework, individual properties of phosphorus allotropes are revealed. △ Less

Submitted 30 June, 2014; originally announced June 2014.

Comments: 5 pages, 5 figures, and Supplemental material

Effect of electron-phonon interactions on Raman line at ferromagnetic ordering

Authors: L. A. Falkovsky

Abstract: The theory of Raman scattering in half-metals by optical phonons interacting with conduction electrons is developed. We evaluate the effect of electron-phonon interactions at ferromagnetic ordering in terms of the Boltzmann equation for carriers. The chemical potential is found to decrease with temperature decreasing. Both the linewidth and frequency shift exhibit a dependence on temperature. The theory of Raman scattering in half-metals by optical phonons interacting with conduction electrons is developed. We evaluate the effect of electron-phonon interactions at ferromagnetic ordering in terms of the Boltzmann equation for carriers. The chemical potential is found to decrease with temperature decreasing. Both the linewidth and frequency shift exhibit a dependence on temperature. △ Less

Submitted 23 March, 2014; originally announced March 2014.

Comments: 5 pages, 4 figures. arXiv admin note: text overlap with arXiv:cond-mat/0203112

Influence of ferromagnetic ordering on Raman scattering in CoS$_2$

Authors: L. A. Falkovsky

Abstract: The effects of phonon anharmonicity, phonon-magnon and electron-phonon interactions on the temperature dependence of Raman optical phonon modes are theoretically investigated. Besides of the Klemens result for the phonon width due to anharmonicity, the corresponding lineshift is derived. We argue that the phonon decay into two magnons has very low intensity in ferromagnets with low Curie temperatu… ▽ More The effects of phonon anharmonicity, phonon-magnon and electron-phonon interactions on the temperature dependence of Raman optical phonon modes are theoretically investigated. Besides of the Klemens result for the phonon width due to anharmonicity, the corresponding lineshift is derived. We argue that the phonon decay into two magnons has very low intensity in ferromagnets with low Curie temperatures. Therefore, the electron interband transitions accompanied with the ferromagnetic ordering are included in considerations to get a good quantitative agreement with experiments. △ Less

Submitted 16 August, 2013; originally announced August 2013.

Comments: 6 pages, 6 figures

Thermodynamics of electron-hole liquids in graphene

Authors: L. A. Falkovsky

Abstract: The impact of renormalization of the electron spectrum on the chemical potential, heat capacity, and oscillating magnetic moment is studied. The cases of low and high temperatures are considered. At low temperatures, doped graphene behaves as the usual Fermi liquids with the power temperature laws for thermodynamic properties. However, at high temperatures and relatively low carrier concentrations… ▽ More The impact of renormalization of the electron spectrum on the chemical potential, heat capacity, and oscillating magnetic moment is studied. The cases of low and high temperatures are considered. At low temperatures, doped graphene behaves as the usual Fermi liquids with the power temperature laws for thermodynamic properties. However, at high temperatures and relatively low carrier concentrations, it exhibits the collective electron-holes features: the chemical potential tends to its value in the undoped case going with the temperature to the charge neutrality point. Simultaneously, the electron contribution into the heat capacity tends to the constant value, as in the case of the Boltzmann statistics. △ Less

Submitted 14 April, 2013; originally announced April 2013.

Comments: 4 pages, 2 figures

Magneto-optics of monolayer and bilayer graphene

Authors: L. A Falkovsky

Abstract: The optical conductivity of graphene and bilayer graphene in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. Correspondences between the transition frequencies and the magneto-optical features are established using the theoretical results. The main optic… ▽ More The optical conductivity of graphene and bilayer graphene in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. Correspondences between the transition frequencies and the magneto-optical features are established using the theoretical results. The main optical transitions obey the selection rule with $Δn=1$ for the Landau number $n$. The Faraday rotation and light transmission in the quantizing magnetic fields are calculated. The effects of temperatures and magnetic fields on the chemical potential are considered. \pacs{71.20.Nr, 78.20.Ci, 78.20.Bh} △ Less

Submitted 21 March, 2013; originally announced March 2013.

Comments: review to be published in JETP Lett

Quantum magneto-optics of graphite family

Authors: L. A. Falkovsky

Abstract: The optical conductivity of graphene, bilayer graphene, and graphite in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. We have shown that trigonal warping can be considered within the perturbation theory for strong magnetic fields larger than 1 T and in… ▽ More The optical conductivity of graphene, bilayer graphene, and graphite in quantizing magnetic fields is studied. Both dynamical conductivities, longitudinal and Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. We have shown that trigonal warping can be considered within the perturbation theory for strong magnetic fields larger than 1 T and in the semiclassical approach for weak fields when the Fermi energy is much larger than the cyclotron frequency. The main optical transitions obey the selection rule with \Deltan = 1 for the Landau number n, however the \Deltan = 2 transitions due to the trigonal warping are also possible. The Faraday/Kerr rotation and light transmission/reflection in the quantizing magnetic fields are calculated. Parameters of the Slonczewski-Weiss-McClure model are used in the fit taking into account the previous dHvA measurements and correcting some of them for the case of strong magnetic fields. △ Less

Submitted 22 May, 2012; originally announced May 2012.

Comments: 28 pages, 12 figures. arXiv admin note: text overlap with arXiv:1106.3401

Berry phase, semiclassical quantization and Landau levels

Authors: A. Yu. Ozerin, L. A. Falkovsky

Abstract: We propose the semiclassical quantization for complicated electron systems governed by a many-band Hamiltonian. An explicit analytical expression of the corresponding Berry phase is derived. This impact allows us to evaluate the Landau magnetic levels when the rigorous quantization fails, for instance, for bilayer graphene and graphite with the trigonal warping. We find that the magnetic breakdown… ▽ More We propose the semiclassical quantization for complicated electron systems governed by a many-band Hamiltonian. An explicit analytical expression of the corresponding Berry phase is derived. This impact allows us to evaluate the Landau magnetic levels when the rigorous quantization fails, for instance, for bilayer graphene and graphite with the trigonal warping. We find that the magnetic breakdown can be observed for the certain type of classical electron orbits. △ Less

Submitted 1 March, 2012; originally announced March 2012.

Comments: 5 pages, 3 figures

Quantum magneto-optics of graphite with trigonal warping

Authors: L. A. Falkovsky

Abstract: The optical conductivity of graphite in quantizing magnetic fields is studied. Both the dynamical conductivities, longitudinal as well as Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. We have shown that the trigonal warping in graphite can be considered within the perturbation theory at the strong magnetic field larger than 1 T approxima… ▽ More The optical conductivity of graphite in quantizing magnetic fields is studied. Both the dynamical conductivities, longitudinal as well as Hall's, are analytically evaluated. The conductivity peaks are explained in terms of electron transitions. We have shown that the trigonal warping in graphite can be considered within the perturbation theory at the strong magnetic field larger than 1 T approximately. The main optical transitions obey the selection rule with $Δn=1$ for the Landau number $n$, however the $Δn=2$ transitions due to the trigonal warping with the small probability are also essential. The Kerr rotation and reflectivity in graphite in the quantizing magnetic fields are calculated. Parameters of the Slonczewski--Weiss--McClure model are used in the fit taking into account the previous dHvA measurements and correcting some of them for the case of the strong magnetic fields. △ Less

Submitted 26 June, 2011; v1 submitted 17 June, 2011; originally announced June 2011.

Comments: 6 pages, 4 figures

Cyclotron resonance and Faraday rotation in graphite

Authors: L. A. Falkovsky

Abstract: The optical conductivity of graphite in quantizing magnetic fields is analytically evaluated for frequencies in the range of 10--300 meV, where the electron relaxation processes can be neglected and the low-energy excitations at the "Dirac lines" are more essential. The conductivity peaks are explained in terms of the electron transitions in graphite. Conductivity calculated per one graphite lay… ▽ More The optical conductivity of graphite in quantizing magnetic fields is analytically evaluated for frequencies in the range of 10--300 meV, where the electron relaxation processes can be neglected and the low-energy excitations at the "Dirac lines" are more essential. The conductivity peaks are explained in terms of the electron transitions in graphite. Conductivity calculated per one graphite layer tends on average to the universal conductivity of graphene while the frequency is larger than the Landau spacing. The (semi)metal-insulator transformation is possible under doping in high magnetic fields. △ Less

Submitted 5 January, 2011; v1 submitted 9 December, 2010; originally announced December 2010.

Comments: 4 pages, 5 figures

Replay to "Comment on 'Screening in gated bilayer graphene' "

Authors: L. A. Falkovsky

Abstract: We discuss the physics of the tunable bandgap in bilayer graphene with the gate voltage and doping. A comparison with experimental data obtained by Kuzmenko et al [Phys. Rev. B \textbf{80}, 165406 (2009)] demonstrates the good agreement. We discuss the physics of the tunable bandgap in bilayer graphene with the gate voltage and doping. A comparison with experimental data obtained by Kuzmenko et al [Phys. Rev. B \textbf{80}, 165406 (2009)] demonstrates the good agreement. △ Less

Submitted 25 November, 2010; originally announced November 2010.

Comments: 3 pages, 1 figure

Anisotropy of graphite optical conductivity

Authors: L. A. Falkovsky

Abstract: The graphite conductivity is evaluated for frequencies between 0.1 eV, the energy of the order of the electron-hole overlap, and 1.5 eV, the electron nearest hopping energy. The in-plane conductivity per single atomic sheet is close to the universal graphene conductivity $e^2/4\hbar$ and, however, contains a singularity conditioned by peculiarities of the electron dispersion. The conductivity is… ▽ More The graphite conductivity is evaluated for frequencies between 0.1 eV, the energy of the order of the electron-hole overlap, and 1.5 eV, the electron nearest hopping energy. The in-plane conductivity per single atomic sheet is close to the universal graphene conductivity $e^2/4\hbar$ and, however, contains a singularity conditioned by peculiarities of the electron dispersion. The conductivity is less in the $c-$direction by the factor of the order of 0.01 governed by electron hopping in this direction. △ Less

Submitted 27 June, 2010; originally announced June 2010.

Comments: 3 pages, 3 figures

Universal infrared conductivity of graphite

Authors: L. A. Falkovsky

Abstract: The conductivity of graphite is analytically evaluated in the range of 0.1-1.5 eV, where the electron relaxation processes can be neglected, and the low energy excitations at the "Dirac" points are most essential. The value of conductivity calculated per one graphite layer is close to the universal conductivity of graphene. The features of the conductivity are explained in terms of singularities o… ▽ More The conductivity of graphite is analytically evaluated in the range of 0.1-1.5 eV, where the electron relaxation processes can be neglected, and the low energy excitations at the "Dirac" points are most essential. The value of conductivity calculated per one graphite layer is close to the universal conductivity of graphene. The features of the conductivity are explained in terms of singularities of the electron dispersion in graphite. △ Less

Submitted 14 June, 2010; originally announced June 2010.

Comments: 4 pages, 3 figures

Gate-tunable bandgap in bilayer graphene

Authors: L. A. Falkovsky

Abstract: The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is… ▽ More The tight-binding model of bilayer graphene is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. A comparison with experimental data obtained by Kuzmenko et al demonstrates the good agreement. △ Less

Submitted 24 August, 2009; originally announced August 2009.

Comments: 6 pages, 5 figures

Screening in gated bilayer graphene

Authors: L. A. Falkovsky

Abstract: The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap i… ▽ More The tight-binding model of a graphene bilayer is used to find the gap between the conduction and valence bands, as a function of both the gate voltage and as the doping by donors or acceptors. The total Hartree energy is minimized and the equation for the gap is obtained. This equation for the ratio of the gap to the chemical potential is determined only by the screening constant. Thus the gap is strictly proportional to the gate voltage or the carrier concentration in the absence of donors or acceptors. In the opposite case, where the donors or acceptors are present, the gap demonstrates the asymmetrical behavior on the electron and hole sides of the gate bias. △ Less

Submitted 25 June, 2009; v1 submitted 12 May, 2009; originally announced May 2009.

Comments: 4 pages,4 figures

InN dielectric function from the midinfrared to the visible range

Authors: L. A. Falkovsky

Abstract: The dispersion of the dielectric function for wurtzite InN is analytically evaluated in the region near the fundamental energy gap. The real part of the dielectric function has a logarithmic singularity at the absorption edge. This results in the large contribution into the optical dielectric constant. For samples with degenerate carriers, the real part of the dielectric function is divergent at… ▽ More The dispersion of the dielectric function for wurtzite InN is analytically evaluated in the region near the fundamental energy gap. The real part of the dielectric function has a logarithmic singularity at the absorption edge. This results in the large contribution into the optical dielectric constant. For samples with degenerate carriers, the real part of the dielectric function is divergent at the absorption edge. The divergence is smeared with temperatures or relaxation rate. The imaginary part of the dielectric function has a plateau far away from the absorption onset. △ Less

Submitted 12 January, 2009; originally announced January 2009.

Comments: 5 pages, 2 figures

Optical properties of graphene

Authors: L. A. Falkovsky

Abstract: Reflectance and transmittance of graphene in the optical region are analyzed as a function of frequency, temperature, and carrier density. We show that the optical graphene properties are determined by the direct interband electron transitions. The real part of the dynamic conductivity in doped graphene at low temperatures takes the universal constant value, whereas the imaginary part is logarit… ▽ More Reflectance and transmittance of graphene in the optical region are analyzed as a function of frequency, temperature, and carrier density. We show that the optical graphene properties are determined by the direct interband electron transitions. The real part of the dynamic conductivity in doped graphene at low temperatures takes the universal constant value, whereas the imaginary part is logarithmically divergent at the threshold of interband transitions. △ Less

Submitted 23 June, 2008; v1 submitted 23 June, 2008; originally announced June 2008.

Comments: 5 pages,4 figures

Features of interband absorption in narrow-gap semiconductors

Authors: L. A. Falkovsky

Abstract: For semiconductors and semimetals possessing a narrow gap between bands with different parity, the dispersion of the dielectric function is explicitly evaluated in the infrared region. The imaginary part of the dielectric function has a plateau above the absorption threshold for the interband electron transitions. The real part of the dielectric function has a logarithmic singularity at the thre… ▽ More For semiconductors and semimetals possessing a narrow gap between bands with different parity, the dispersion of the dielectric function is explicitly evaluated in the infrared region. The imaginary part of the dielectric function has a plateau above the absorption threshold for the interband electron transitions. The real part of the dielectric function has a logarithmic singularity at the threshold. This results in the large contribution into the dielectric constant for pure semiconductors at low frequencies. For samples with degenerate carriers, the real part of the dielectric function is divergent at the absorption threshold. This divergence is smeared with the temperature or the collision rate. △ Less

Submitted 3 March, 2008; v1 submitted 14 February, 2008; originally announced February 2008.

Comments: 4 pages, 2 figures

Symmetry constraints on phonon dispersion in graphene

Authors: L. A. Falkovsky

Abstract: Taking into account the constraints imposed by the lattice symmetry, we calculate the phonon dispersion for graphene with interactions between the first, second, and third nearest neighbors in the framework of the Born--von Karman model. Analytical expressions obtained for the dispersion of the out-of-plane (bending) modes give the nonzero sound velocity. The dispersion of four in-plane modes is… ▽ More Taking into account the constraints imposed by the lattice symmetry, we calculate the phonon dispersion for graphene with interactions between the first, second, and third nearest neighbors in the framework of the Born--von Karman model. Analytical expressions obtained for the dispersion of the out-of-plane (bending) modes give the nonzero sound velocity. The dispersion of four in-plane modes is determined by coupled equations. Values of the force constants are found in fitting with frequencies at critical points and with elastic constants measured on graphite. △ Less

Submitted 7 February, 2008; originally announced February 2008.

Comments: 5 pages, 2 figures

Optical far-infrared properties of graphene monolayer and multilayers

Authors: L. A. Falkovsky

Abstract: We analyze the features of the graphene mono- and multilayer reflectance in the far-infrared region as a function of frequency, temperature, and carrier density taking the intraband conductance and the interband electron absorbtion into account. The dispersion of plasmon mode of the multilayers is calculated using Maxwell's equations with the influence of retardation included. At low temperature… ▽ More We analyze the features of the graphene mono- and multilayer reflectance in the far-infrared region as a function of frequency, temperature, and carrier density taking the intraband conductance and the interband electron absorbtion into account. The dispersion of plasmon mode of the multilayers is calculated using Maxwell's equations with the influence of retardation included. At low temperatures and high electron densities, the reflectance of multilayers as a function of frequency has the sharp downfall and the subsequent deep well due to the threshold of electron interband absorbtion. △ Less

Submitted 10 July, 2007; originally announced July 2007.

Comments: 9 pages, 4 figures

Loschmidt echo and stochastic-like quantum dynamics of nano-particles

Authors: V. A. Benderskii, L. A. Falkovsky, E. I. Kats

Abstract: We investigate time evolution of prepared vibrational state (system) coupled to a reservoir with dense spectrum of its vibrational states. We assume that the reservoir has an equidistant spectrum, and the system - reservoir coupling matrix elements are independent of the reservoir states. The analytical solution manifests three regimes of the evolution for the system: (I) weakly damped oscillati… ▽ More We investigate time evolution of prepared vibrational state (system) coupled to a reservoir with dense spectrum of its vibrational states. We assume that the reservoir has an equidistant spectrum, and the system - reservoir coupling matrix elements are independent of the reservoir states. The analytical solution manifests three regimes of the evolution for the system: (I) weakly damped oscillations; (II) multicomponent Loschmidt echo in recurrence cycles; (III) overlapping recurrence cycles. We find the characteristic critical values of the system - reservoir coupling constant for the transitions between these regimes. Stochastic dynamics occurs in the regime (III) due to inevoidably in any real system coarse graining of time or energy measurements, or initial condition uncertainty. Even though a specific toy model is investigated here, when properly interpreted it yields quite reasonable description for a variety of physically relevant phenomena. △ Less

Submitted 15 June, 2007; originally announced June 2007.

Comments: 8 pages, 3 figures

Phonon dispersion in graphene

Authors: L. A. Falkovsky

Abstract: Taking into account the constraints imposed by the lattice symmetry, the phonon dispersion is calculated for graphene with interactions between the first and second nearest neighbors in the framework of the Born-von Karman model. Analytical expressions are obtained for the out-of-plane (bending) modes determined only by two force constants as well as for the in-plane modes with four force consta… ▽ More Taking into account the constraints imposed by the lattice symmetry, the phonon dispersion is calculated for graphene with interactions between the first and second nearest neighbors in the framework of the Born-von Karman model. Analytical expressions are obtained for the out-of-plane (bending) modes determined only by two force constants as well as for the in-plane modes with four force constants. Values of the force constants are found in fitting to elastic constants and Raman frequencies observed in graphite. △ Less

Submitted 11 August, 2007; v1 submitted 17 February, 2007; originally announced February 2007.

Comments: 6 pages, 4 figures

Unusual field and temperature dependence of Hall effect in graphene

Authors: L. A. Falkovsky

Abstract: We calculate the classic Hall conductivity and mobility of the undoped and doped (or in the gate voltage) graphene as a function of temperature, magnetic field, and carrier concentration. Carrier collisions with defects and acoustic phonons are taken into account. The Hall resistivity varies almost linearly with temperature. The magnetic field dependence of resistivity and mobility is anomalous… ▽ More We calculate the classic Hall conductivity and mobility of the undoped and doped (or in the gate voltage) graphene as a function of temperature, magnetic field, and carrier concentration. Carrier collisions with defects and acoustic phonons are taken into account. The Hall resistivity varies almost linearly with temperature. The magnetic field dependence of resistivity and mobility is anomalous in weak magnetic fields. There is the square root contribution from the field in the resistivity. The Hall mobility diverges logarithmically with the field for low doping. △ Less

Submitted 19 November, 2006; v1 submitted 6 November, 2006; originally announced November 2006.

Comments: 4 pages, 5 figures, typos corrected

Space-time dispersion of graphene conductivity

Authors: L. A. Falkovsky, A. A. Varlamov

Abstract: We present an analytic calculation of the conductivity of pure graphene as a function of frequency $ω$, wave-vector $k$, and temperature for the range where the energies related to all these parameters are small in comparison with the band parameter $γ=3$ eV. The simple asymptotic expressions are given in various limiting cases. For instance, the conductivity for $kv_{0}\ll T\ll ω$ is equal to… ▽ More We present an analytic calculation of the conductivity of pure graphene as a function of frequency $ω$, wave-vector $k$, and temperature for the range where the energies related to all these parameters are small in comparison with the band parameter $γ=3$ eV. The simple asymptotic expressions are given in various limiting cases. For instance, the conductivity for $kv_{0}\ll T\ll ω$ is equal to $σ(ω, k)=e^{2}/4\hbar $ and independent of the band structure parameters $γ$ and $v_{0}$. Our results are also used to explain the known dependence of the graphite conductivity on temperature and pressure. △ Less

Submitted 30 June, 2006; originally announced June 2006.

Comments: 4 pages, 1 figure, to be submitted

Infrared absorption and Raman scattering on coupled plasmon--phonon modes in superlattices

Authors: L. A. Falkovsky, E. G. Mishchenko

Abstract: We consider theoretically a superlattice formed by thin conducting layers separated spatially between insulating layers. The dispersion of two coupled phonon-plasmon modes of the system is analyzed by using Maxwell's equations, with the influence of retardation included. Both transmission for the finite plate as well as absorption for the semi-infinite superlattice in the infrared are calculated… ▽ More We consider theoretically a superlattice formed by thin conducting layers separated spatially between insulating layers. The dispersion of two coupled phonon-plasmon modes of the system is analyzed by using Maxwell's equations, with the influence of retardation included. Both transmission for the finite plate as well as absorption for the semi-infinite superlattice in the infrared are calculated. Reflectance minima are determined by the longitudinal and transverse phonon frequencies in the insulating layers and by the density-state singularities of the coupled modes. We evaluate also the Raman cross section from the semi-infinite superlattice. △ Less

Submitted 28 October, 2005; originally announced October 2005.

Comments: 20 pages,14 figures

Journal ref: Journal of Experimental and Theoretical Physics, Vol. 102, No. 4, pp. 661-670 (2006)

Effects of disorder on the Raman line-shape in ZrO_2

Authors: L. A. Falkovsky

Abstract: Experimental data obtained by Lughi and Clarke [J. Am. Ceram. Soc., 88, 2552 (2005)] are compared to the theory describing disorder effects on optical phonons. Sharpening and vanishing of the asymmetry of the Raman lines after annealing are attributed to a decrease in short-range disorder. The parameters of disorder (such as the phonon-defect coupling and the correlation length) are defined in t… ▽ More Experimental data obtained by Lughi and Clarke [J. Am. Ceram. Soc., 88, 2552 (2005)] are compared to the theory describing disorder effects on optical phonons. Sharpening and vanishing of the asymmetry of the Raman lines after annealing are attributed to a decrease in short-range disorder. The parameters of disorder (such as the phonon-defect coupling and the correlation length) are defined in the comparison. △ Less

Submitted 21 September, 2005; originally announced September 2005.

Comments: 11 pages, 3 figures

Raman scattering on phonon-plasmon coupled modes in magnetic fields

Authors: L. A. Falkovsky

Abstract: Raman scattering on phonon--plasmon coupled modes in high magnetic fields is considered theoretically. The calculations of the dielectric function were performed in the long-wave approximation for the semiclassical and ultra-quantum magnetic fields taking into account the electron damping and intrinsic lifetime of optical phonons. The Raman scattering has resonances at the frequencies of coupled… ▽ More Raman scattering on phonon--plasmon coupled modes in high magnetic fields is considered theoretically. The calculations of the dielectric function were performed in the long-wave approximation for the semiclassical and ultra-quantum magnetic fields taking into account the electron damping and intrinsic lifetime of optical phonons. The Raman scattering has resonances at the frequencies of coupled modes as well as at multiples of the cyclotron frequency. The dependence of the Raman cross section on the carrier concentration is analyzed. △ Less

Submitted 1 March, 2004; originally announced March 2004.

Comments: 6 pages,4 figures

Damping of coupled phonon--plasmon modes

Authors: L. A. Falkovsky

Abstract: The effect of free carriers on dispersion and damping of coupled phonon-plasmon modes is considered in the long-wave approximation. The electron and phonon scattering rate as well as Landau damping are taken into account. The effect of free carriers on dispersion and damping of coupled phonon-plasmon modes is considered in the long-wave approximation. The electron and phonon scattering rate as well as Landau damping are taken into account. △ Less

Submitted 3 November, 2002; originally announced November 2002.

Comments: 9 pages,8 figures,to be published in JETP

Effect of electron-phonon interaction on the shift and attenuation of optical phonons

Authors: L. A. Falkovsky

Abstract: Using the Boltzmann equation for electrons in metals, we show that the optical phonons soften and have a dispersion due to screening in agreement with the results reported recently [M. Reizer, Phys. Rev. B {\bf 61}, 40 (2000)]. Additional phonon damping and frequency shift arise when the electron--phonon interaction is properly included. Using the Boltzmann equation for electrons in metals, we show that the optical phonons soften and have a dispersion due to screening in agreement with the results reported recently [M. Reizer, Phys. Rev. B {\bf 61}, 40 (2000)]. Additional phonon damping and frequency shift arise when the electron--phonon interaction is properly included. △ Less

Submitted 6 March, 2002; originally announced March 2002.

Comments: 4 pages, latex

Width of phonon states on defects of various dimensions

Authors: L. A. Falkovsky

Abstract: We consider the localized phonon states created by defects of various geometries near the edge of an optical-phonon branch. The averaged Green's function is calculated to study the Raman line shape. The phonon scattering by the defects induces broadening and line shape asymmetry. The contribution of localized states to Raman spectra has a form of shoulder with a width proportional to the square… ▽ More We consider the localized phonon states created by defects of various geometries near the edge of an optical-phonon branch. The averaged Green's function is calculated to study the Raman line shape. The phonon scattering by the defects induces broadening and line shape asymmetry. The contribution of localized states to Raman spectra has a form of shoulder with a width proportional to the square root of defect concentration. △ Less

Submitted 8 January, 2001; originally announced January 2001.

Comments: 14 pages, 6 figures, submitted in Phys. Rev. B

Coulomb effects in dynamics of polar lattices

Authors: L. A. Falkovsky

Abstract: Zone-center phonon frequencies of polar lattices are calculated for uniaxial crystals from the symmetry arguments. Long-range Coulomb forces and crystal anisotropy are explicitly taken into account. Free-carrier contributions into a dielectric constant are included. The angular dispersion of optical-phonon modes is compared with data for hexagonal 6H-SiC politype. Zone-center phonon frequencies of polar lattices are calculated for uniaxial crystals from the symmetry arguments. Long-range Coulomb forces and crystal anisotropy are explicitly taken into account. Free-carrier contributions into a dielectric constant are included. The angular dispersion of optical-phonon modes is compared with data for hexagonal 6H-SiC politype. △ Less

Submitted 4 January, 2001; originally announced January 2001.

Comments: 9 pages, 1 figure, to be published in JETP, issue 5, 2001

Strain effect in silicon-on-insulator materials: Investigation with optical phonons

Authors: J. Camassel, L. A. Falkovsky, N. Planes

Abstract: We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is made of a single-crystal silicon overlayer (SOL) on top of an insulator (buried SiO$_{2}$ layer) sitting on a handle silicon wafer. Infrared reflectivity spec… ▽ More We report a detailed experimental and theoretical investigation of the effect of residual strain, and strain relaxation, which manifests itself at the Si/SiO$_{2}$ interfaces in commercial silicon-on-insulator (SOI) wafers. SOI material is made of a single-crystal silicon overlayer (SOL) on top of an insulator (buried SiO$_{2}$ layer) sitting on a handle silicon wafer. Infrared reflectivity spectra show that the buried SiO$_{2}$ layer relaxes continuously when thinning the SOL. At the same time the SOL surface roughness and the linewidth of optical phonons in Si near the Si/SiO$_2$ interface (probed by micro-Raman specroscopy) increase. In the as-delivered wafers, this comes from a slight expansion of Si on both sides of the buried SiO$_{2}$ layer which, conversely, is compressed. Thinning the SOL modifies these initial equilibrium conditions. To get quantitative results, we have modeled all our Raman spectra using a theory of inhomogeneous shift and broadening for optical phonons, which takes into account the phonon interaction with the static strain fluctuations. From the variation of linewidth versus interface distance, we have found that the mean squared strain continues to relax in the bulk of the wafer through a depth on the order of several $μm$. We also show that the SOL surface roughness is related to strain fluctuations near the Si/SiO$_2$ interfaces. △ Less

Submitted 29 September, 2000; originally announced September 2000.

Comments: 28 pages, 11 figure, to be published in Phys. Rev. B (Nov 15 2000)

Electron-lattice kinetics of metals heated by ultrashort laser pulses

Authors: L. A. Falkovsky, E. G. Mishchenko

Abstract: We propose a kinetic model of transient nonequilibrium phenomena in metals exposed to ultrashort laser pulses when heated electrons affect the lattice through direct electron-phonon interaction. This model describes the destruction of a metal under intense laser pumping. We derive the system of equations for the metal, which consists of hot electrons and a cold lattice. Hot electrons are describ… ▽ More We propose a kinetic model of transient nonequilibrium phenomena in metals exposed to ultrashort laser pulses when heated electrons affect the lattice through direct electron-phonon interaction. This model describes the destruction of a metal under intense laser pumping. We derive the system of equations for the metal, which consists of hot electrons and a cold lattice. Hot electrons are described with the help of the Boltzmann equation and equation of thermoconductivity. We use the equations of motion for lattice displacements with the electron force included. The lattice deformation is estimated immediately after the laser pulse up to the time of electron temperature relaxation. An estimate shows that the ablation regime can be achieved. △ Less

Submitted 1 February, 1999; originally announced February 1999.

Comments: 7 pages; Revtex. to appear in JETP 88, #1 (1999)

Journal ref: JETP 88, 84 (1999).