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Shubnikov-de Haas Oscillations in 2D $\text{PtSe}_2$: A fermiological Charge Carrier Investigation
Authors:
Julian Max Salchegger,
Rajdeep Adhikari,
Bogdan Faina,
Alberta Bonanni
Abstract:
High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of $\text{PtSe}_2$. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths $\gtrsim 4.5\,\text{T}$ are found to occur exclusively in plane and emerge at a layer thickness of $\approx 18\,\text{nm}$, increasing in amplitude and decreasing in frequency…
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High magnetic field and low temperature transport is carried out in order to characterize the charge carriers of $\text{PtSe}_2$. In particular, the Shubnikov-de Haas oscillations arising at applied magnetic field strengths $\gtrsim 4.5\,\text{T}$ are found to occur exclusively in plane and emerge at a layer thickness of $\approx 18\,\text{nm}$, increasing in amplitude and decreasing in frequency for thinner $\text{PtSe}_2$ flakes. Moreover, the quantum transport time, Berry phase, Dingle temperature and cyclotron mass of the charge carriers are ascertained. The emergence of weak antilocalization (WAL) lies in contrast to the presence of magnetic moments from Pt vacancies. An explanation is provided on how WAL and the Kondo effect can be observed within the same material. Detailed information about the charge carriers and transport phenomena in $\text{PtSe}_2$ is obtained, which is relevant for the design of prospective spintronic and orbitronic devices and for the realization of orbital Hall effect-based architectures.
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Submitted 21 May, 2025;
originally announced May 2025.
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Negative Longitudinal Magnetoresistance in the Dirac Semimetal PtSe$_2$ -- Kondo Effect and Surface Spin Dynamics
Authors:
Julian Max Salchegger,
Rajdeep Adhikari,
Bogdan Faina,
Jelena Pesic,
Alberta Bonanni
Abstract:
The emergence of negative longitudinal magnetoresistance in the topologically non-trivial transition-metal dichalcogenide PtSe$_2$ is studied. Low $T$/high $μ_0 H$ transport is performed for arbitrary field directions, and an analytical framework is established. The source of the negative longitudinal magnetoresistance is identified as the Kondo effect stemming from Pt-vacancies contributing an un…
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The emergence of negative longitudinal magnetoresistance in the topologically non-trivial transition-metal dichalcogenide PtSe$_2$ is studied. Low $T$/high $μ_0 H$ transport is performed for arbitrary field directions, and an analytical framework is established. The source of the negative longitudinal magnetoresistance is identified as the Kondo effect stemming from Pt-vacancies contributing an uncompensated spin, exclusively at the sample surface. The concentration of vacancies and the sample thickness are identified as tuning parameters. The findings are substantiated by density functional theory, which corroborates the proposed Pt-vacancy model.
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Submitted 6 August, 2024; v1 submitted 23 July, 2024;
originally announced July 2024.
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arXiv:2306.14481
[pdf]
cond-mat.supr-con
cond-mat.mes-hall
cond-mat.mtrl-sci
cond-mat.other
physics.app-ph
Phase purity and surface morphology of high-Jc superconducting Bi2Sr2Ca1Cu2O8+δ thin films
Authors:
Sandra Keppert,
Bernd Aichner,
Rajdeep Adhikari,
Bogdan Faina,
Wolfgang Lang,
Johannes D. Pedarnig
Abstract:
Bi2Sr2Ca1Cu2O8+d (Bi-2212) thin films with thicknesses less than 50 nm (<20 unit cells) are grown by pulsed laser deposition (PLD) onto (001) LaAlO3 (LAO) single crystal substrates. Phase-pure and smooth c-axis oriented Bi-2212 films with optimal oxygen doping, critical temperature Tc0 up to 86 K, and critical current density Jc(60 K) above 1 MA/cm2 are obtained for samples that are annealed in si…
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Bi2Sr2Ca1Cu2O8+d (Bi-2212) thin films with thicknesses less than 50 nm (<20 unit cells) are grown by pulsed laser deposition (PLD) onto (001) LaAlO3 (LAO) single crystal substrates. Phase-pure and smooth c-axis oriented Bi-2212 films with optimal oxygen doping, critical temperature Tc0 up to 86 K, and critical current density Jc(60 K) above 1 MA/cm2 are obtained for samples that are annealed in situ at temperatures below 700 °C. At higher temperature Bi-2212 films on LAO substrates partially decompose to non-superconducting impurity phases, while films on MgO and SrTiO3 substrates are stable. The broadening of Tc of the metal-to-superconductor resistive phase transition in magnetic fields is much larger for thin films of Bi-2212 as compared to YBa2Cu3O7. The magnetic field-induced suppression of Tc0 is stronger for Bi-2212 films containing impurity phases as compared to the phase-pure Bi-2212 films. The degradation of LAO substrate crystals after several steps of deposition and chemical removal of the Bi-2212 layer is investigated. New, commercially prepared substrates provide Bi-2212 films with smallest surface roughness (3 nm) and strong out-of-plane texture. However, thin films of almost the same quality are obtained on re-used LAO substrates that are mechanically polished after the chemical etching.
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Submitted 26 June, 2023;
originally announced June 2023.
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Effect of impurity scattering on percolation of bosonic islands and reentrant superconductivity in Fe implanted NbN thin films
Authors:
Rajdeep Adhikari,
Bogdan Faina,
Verena Ney,
Julia Vorhauer,
Antonia Sterrer,
Andreas Ney,
Alberta Bonanni
Abstract:
A reentrant temperature dependence of the thermoresistivity $ρ_{\mathrm{xx}}(T)$ between an onset local superconducting ordering temperature $T_\mathrm{loc}^\mathrm{onset}$ and a global superconducting transition at $T=T_\mathrm{glo}^\mathrm{offset}$ has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extri…
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A reentrant temperature dependence of the thermoresistivity $ρ_{\mathrm{xx}}(T)$ between an onset local superconducting ordering temperature $T_\mathrm{loc}^\mathrm{onset}$ and a global superconducting transition at $T=T_\mathrm{glo}^\mathrm{offset}$ has been reported in disordered conventional 3-dimensional (3D) superconductors. The disorder of these superconductors is a result of either an extrinsic granularity due to grain boundaries, or of an intrinsic granularity ascribable to the electronic disorder originating from impurity dopants. Here, the effects of Fe doping on the electronic properties of sputtered NbN layers with a nominal thickness of 100 nm are studied by means of low-$T$/high-$μ_{0}H$ magnetotransport measurements. The doping of NbN is achieved $via$ implantation of 35 keV Fe ions. In the as-grown NbN films, a local onset of superconductivity at $T_\mathrm{loc}^\mathrm{onset}=15.72\,\mathrm{K}$ is found, while the global superconducting ordering is achieved at $T_\mathrm{glo}^\mathrm{offset}=15.05\,\mathrm{K}$, with a normal state resistivity $ρ_{\mathrm{xx}}=22\,{μΩ}\cdot{\mathrm{cm}}$. Moreover, upon Fe doping of NbN, $ρ_{\mathrm{xx}}=40\,{μΩ}\cdot{\mathrm{cm}}$ is estimated, while $T_\mathrm{loc}^\mathrm{onset}$ and $T_\mathrm{glo}^\mathrm{offset}$ are measured to be 15.1 K and 13.5K, respectively. In Fe:NbN, the intrinsic granularity leads to the emergence of a bosonic insulator state and the normal-metal-to-superconductor transition is accompanied by six different electronic phases characterized by a $N$-shaped $T$ dependence of $ρ_{\mathrm{xx}}(T)$. The bosonic insulator state in a $s$-wave conventional superconductor doped with dilute paramagnetic impurities is predicted to represent a workbench for emergent phenomena, such as gapless superconductivity, triplet Cooper pairings and topological odd frequency superconductivity.
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Submitted 13 July, 2022;
originally announced July 2022.
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Positive magnetoresistance and chiral anomaly in exfoliated type-II Weyl semimetal $T_\mathrm{d}$-WTe$_{2}$
Authors:
R. Adhikari,
S. Adhikari,
B. Faina,
M. Terschanski,
S. Bork,
C. Leimhofer,
M. Cinchetti,
A. Bonanni
Abstract:
Layered van der Waals semimetallic $T_\mathrm{d}$-WTe$_{2}$, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as model topological type-II Weyl semimetal system. Here, $\sim$45 nm thick mechanically exfoliated flakes of $T_\mathrm{d}$-WTe$_{2}$ are studied $via$ atomic force microscopy, Raman spectroscopy,…
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Layered van der Waals semimetallic $T_\mathrm{d}$-WTe$_{2}$, exhibiting intriguing properties which include non-saturating extreme positive magnetoresistance (MR) and tunable chiral anomaly, has emerged as model topological type-II Weyl semimetal system. Here, $\sim$45 nm thick mechanically exfoliated flakes of $T_\mathrm{d}$-WTe$_{2}$ are studied $via$ atomic force microscopy, Raman spectroscopy, low-$T$/high-$μ_{0}H$ magnetotransport measurements and optical reflectivity. The contribution of anisotropy of the Fermi liquid state to the origin of the large positive transverse $\mathrm{MR}_\perp$ and the signature of chiral anomaly of the type-II Weyl fermions are reported. The samples are found to be stable in air and no oxidation or degradation of the electronic properties are observed. A transverse $\mathrm{MR}_\perp$ $\sim$1200\,\% and an average carrier mobility of $5000$\, cm$^{2}$V$^{-1}$s$^{-1}$ at $T=5\,\mathrm{K}$ for an applied perpendicular field $μ_{0}H_{\perp} = 7\,\mathrm{T}$ are established. The system follows a Fermi liquid model for $T\leq50\,\mathrm{K}$ and the anisotropy of the Fermi surface is concluded to be at the origin of the observed positive MR. The anisotropy of the electronic behaviour is also confirmed by optical reflectivity measurements. The relative orientation of the crystal axes and of the applied electric and magnetic fields is proven to give rise to the observed chiral anomaly in the in-plane magnetotransport.
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Submitted 30 March, 2021;
originally announced March 2021.
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Low temperature and high magnetic field performance of a commercial piezo-actuator probed $via$ laser interferometry
Authors:
R. Adhikari,
K. Doesinger,
P. Linder,
B. Faina,
A. Bonanni
Abstract:
The advances in the fields of scanning probe microscopy, scanning tunneling spectroscopy, point contact spectroscopy and point contact Andreev reflection spectroscopy to study the properties of conventional and quantum materials at cryogenic conditions have prompted the development of nanopositioners and nanoscanners with enhanced spatial resolution. Piezoelectric-actuator stacks as nanopositioner…
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The advances in the fields of scanning probe microscopy, scanning tunneling spectroscopy, point contact spectroscopy and point contact Andreev reflection spectroscopy to study the properties of conventional and quantum materials at cryogenic conditions have prompted the development of nanopositioners and nanoscanners with enhanced spatial resolution. Piezoelectric-actuator stacks as nanopositioners with working strokes $>100~μ\mathrm{m}$ and positioning resolution $\sim$(1-10) nm are desirable for both basic research and industrial applications. However, information on the performance of most commercial piezoelectric-actuators in cryogenic environment and in the presence of magnetic fields in excess of 5\,T is generally not available. In particular, the magnitude, rate and the associated hysteresis of the piezo-displacement at cryogenic temperatures are the most relevant parameters that determine whether a particular piezoelectric-actuator can be used as a nanopositioner. Here, the design and realization of an experimental set-up based on interferometric techniques to characterize a commercial piezoelectric-actuator over a temperature range of $2~\mathrm{K}\leq{T}\leq260~\mathrm{K}$ and magnetic fields up to 6\,T is presented. The studied piezoelectric-actuator has a maximum displacement of $30~μ\mathrm{m}$ at room temperature for a maximum driving voltage of 75\,V, which reduces to $1.2~μ\mathrm{m}$ with an absolute hysteresis of $\left(9.1\pm3.3\right)~\mathrm{nm}$ at $T=2\,\mathrm{K}$. The magnetic field is shown to have no substantial effect on the piezo properties of the studied piezoelectric-actuator stack.
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Submitted 22 October, 2020;
originally announced October 2020.
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Ferromagnetic phase transition in topological crystalline insulator thin films: interplay of anomalous Hall angle and magnetic anisotropy
Authors:
R. Adhikari,
V. V. Volobuev,
B. Faina,
G. Springholz,
A. Bonanni
Abstract:
In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple dissipationless edge and surface conduction channels defined by a Chern number $\mathcal{C}\geq1$ was foreseen for the ferromagnetically ordered SnTe class of topolo…
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In magnetic topological phases of matter, the quantum anomalous Hall (QAH) effect is an emergent phenomenon driven by ferromagnetic doping, magnetic proximity effects and strain engineering. The realization of QAH states with multiple dissipationless edge and surface conduction channels defined by a Chern number $\mathcal{C}\geq1$ was foreseen for the ferromagnetically ordered SnTe class of topological crystalline insulators (TCIs). From magnetotransport measurements on Sn$_{1-x}$Mn$_{x}$Te ($0.00\leq{x}\leq{0.08}$)(111) epitaxial thin films grown by molecular beam epitaxy on BaF$_{2}$ substrates, hole mediated ferromagnetism is observed in samples with $x\geq0.06$ and the highest $T_\mathrm{c}\sim7.5\,\mathrm{K}$ is inferred from an anomalous Hall behavior in Sn$_{0.92}$Mn$_{0.08}$Te. The sizable anomalous Hall angle $\sim$0.3 obtained for Sn$_{0.92}$Mn$_{0.08}$Te is one of the greatest reported for magnetic topological materials. The ferromagnetic ordering with perpendicular magnetic anisotropy, complemented by the inception of anomalous Hall effect in the Sn$_{1-x}$Mn$_{x}$Te layers for a thickness commensurate with the decay length of the top and bottom surface states, points at Sn$_{1-x}$Mn$_{x}$Te as a preferential platform for the realization of QAH states in ferromagnetic TCIs.
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Submitted 12 July, 2019;
originally announced July 2019.
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Magnetotransport in phase-separated (Ga,Fe)N with $γ$'-Ga$_y$Fe$_{4-y}$N nanocrystals
Authors:
A. Navarro-Quezada,
M. Aiglinger,
B. Faina,
K. Gas,
M. Matzer,
Tian Li,
R. Adhikari,
M. Sawicki,
A. Bonanni
Abstract:
The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hoppin…
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The magnetotransport in phase-separated (Ga,Fe)N containing $γ$'-Ga$_y$Fe$_{4-y}$N (0\,$<$\,y\,$<$1) nanocrystals (NCs) is studied in the temperature range between 2\,K and 300\,K. The evolution of the resistivity and of the magnetoresistance (MR) as a function of temperature points at two conduction mechanisms: namely a conventional Arrhenius-type one down to 50\,K, and Mott variable range hopping at lower temperatures, where the spin-polarized current is transported between NCs in a regime in which phonon-scattering effects are not dominant. Below 25\,K, the MR shows a hysteretic contribution at magnetic fields $<$1\,T and proportional to the coercive field. Anisotropic magnetoresistance with values one order of magnitude greater than those previously reported for $γ$'-Fe$_4$N thin films over the whole considered temperature range, confirms that the observed MR in these layers is determined by the embedded nanocrystals.
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Submitted 24 September, 2018;
originally announced September 2018.
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All-nitride and In-free Al$_x$Ga$_{1-x}$N:Mn/GaN distributed Bragg reflectors for the near-infrared
Authors:
G. Capuzzo,
D. Kysylychyn,
R. Adhikari,
T. Li,
B. Faina,
A. Tarazaga Martín-Luengo,
A. Bonanni
Abstract:
Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established,…
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Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride and In-free efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop Al$_x$Ga$_{1-x}$N:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mg$_{k}$ complexes optically active in the telecommunication range of wavelengths.
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Submitted 25 August, 2016;
originally announced August 2016.
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Upper bound for the s-d exchange integral in n-(Ga,Mn)N:Si from magnetotransport studies
Authors:
R. Adhikari,
W. Stefanowicz,
B. Faina,
M. Sawicki,
T. Dietl,
A. Bonanni
Abstract:
A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by me…
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A series of recent magnetooptical studies pointed to contradicting values of the s-d exchange energy N0α in Mn-doped GaAs and GaN as well as in Fe-doped GaN. Here, a strong sensitivity of weak-localization phenomena to symmetry breaking perturbations (such as spin-splitting and spin-disorder scattering) is exploited to evaluate the magnitude of N0α for n-type wurtzite (Ga,Mn)N:Si films grown by metalorganic vapor phase epitaxy. Millikelvin magnetoresistance studies and their quantitative interpretation point to N0α < 40 meV, a value at least 5 times smaller than the one found with similar measurements on, e.g., $n$-(Zn,Mn)O. It is shown that this striking difference in the values of the s-d coupling between $n$-type III-V and II-VI dilute magnetic semiconductors can be explained by a theory that takes into account the acceptor character of Mn in III-V compounds.
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Submitted 12 December, 2014;
originally announced December 2014.
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Experimental determination of Rashba spin-orbit coupling in wurtzite $n$-GaN:Si
Authors:
W. Stefanowicz,
R. Adhikari,
T. Andrearczyk,
B. Faina,
M. Sawicki,
J. A. Majewski,
T. Dietl,
A. Bonanni
Abstract:
Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajec…
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Millikelvin magnetotransport studies are carried out on heavily $n$-doped wurtzite GaN:Si films grown on semi-insulating GaN:Mn buffer layers by metal-organic vapor phase epitaxy. The dependency of the conductivity on magnetic field and temperature is interpreted in terms of theories that take into account disorder-induced quantum interference of one-electron and many-electron self-crossing trajectories. The Rashba parameter $α_{\text{R}}\,=\,(4.5 \pm 1)$ meV$Å$ is determined, and it is shown that in the previous studies of electrons adjacent to GaN/(Al,Ga)N interfaces, bulk inversion asymmetry was dominant over structural inversion asymmetry. The comparison of experimental and theoretical values of $α_{\text{R}}$ across a series of wurtzite semiconductors is presented as a test of current relativistic ab initio computation schemes. It is found that electron-electron scattering with small energy transfer accounts for low temperature decoherence in these systems.
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Submitted 5 May, 2014; v1 submitted 27 February, 2014;
originally announced February 2014.
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Manipulating Mn--Mg$_k$ cation complexes to control the charge- and spin-state of Mn in GaN
Authors:
Thibaut Devillers,
Mauro Rovezzi,
Nevill Gonzalez Szwacki,
Sylwia Dobkowska,
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Andreas Grois,
Jan Suffczyński,
Andrea Navarro-Quezada,
Bogdan Faina,
Tian Li,
Pieter Glatzel,
Francesco d'Acapito,
Rafał Jakieła,
Maciej Sawicki,
Jacek A. Majewski,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron technique…
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Owing to the variety of possible charge and spin states and to the different ways of coupling to the environment, paramagnetic centres in wide band-gap semiconductors and insulators exhibit a strikingly rich spectrum of properties and functionalities, exploited in commercial light emitters and proposed for applications in quantum information. Here we demonstrate, by combining synchrotron techniques with magnetic, optical and \emph{ab initio} studies, that the codoping of GaN:Mn with Mg allows to control the Mn$^{n+}$ charge and spin state in the range $3\le n\le 5$ and $2\ge S\ge 1$. According to our results, this outstanding degree of tunability arises from the formation of hitherto concealed cation complexes Mn-Mg$_k$, where the number of ligands $k$ is pre-defined by fabrication conditions. The properties of these complexes allow to extend towards the infrared the already remarkable optical capabilities of nitrides, open to solotronics functionalities, and generally represent a fresh perspective for magnetic semiconductors.
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Submitted 13 November, 2013;
originally announced November 2013.
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Magnetooptical properties of (Ga,Fe)N layers
Authors:
J. Papierska,
J. -G. Rousset,
W. Pacuski,
P. Kossacki,
A. Golnik,
M. Nawrocki,
J. A. Gaj,
J. Suffczyński,
I. Kowalik,
W. Stefanowicz,
M. Sawicki,
T. Dietl,
A. Navarro-Quezada,
B. Faina,
Tian Li,
A. Bonanni
Abstract:
Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals,…
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Magnetooptical properties of (Ga,Mn)N layers containing various concentrations of Fe-rich nanocrystals embedded in paramagnetic (Ga,Fe)N layers are reported. Previous studies of such samples demonstrated that magnetization consists of a paramagnetic contribution due to substitutional diluted Fe ions as well as of ferromagnetic and antiferromagnetic components originating from Fe-rich nanocrystals, whose relative abundance can be controlled by the grow conditions. The nanocrystals are found to broaden and to reduce the magnitude of the excitonic features. However, the ferromagnetic contribution, clearly seen in SQUID magnetometry, is not revealed by magnetic circular dichroism (MCD). Possible reasons for differences in magnetic response determined by MCD and SQUID measurements are discussed.
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Submitted 15 August, 2013;
originally announced August 2013.
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Relation between exciton splittings, magnetic circular dichroism, and magnetization in wurtzite (Ga,Fe)N
Authors:
J. -G. Rousset,
J. Papierska,
W. Pacuski,
A. Golnik,
M. Nawrocki,
W. Stefanowicz,
S. Stefanowicz,
M. Sawicki,
R. Jakiela,
T. Dietl,
A. Navarro-Quezada,
B. Faina,
T. Li,
A. Bonanni,
J. Suffczynski
Abstract:
The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Op…
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The question of the correlation between magnetization, band splittings, and magnetic circular dichroism (MCD) in the fundamental gap region of dilute magnetic semiconductors is examined experimentally and theoretically taking the case of wurtzite Ga(1-x)FexN as an example. Magnetization and polarization-resolved reflectivity measurements have been performed down to 2K and up to 7T for x = 0.2%. Optical transitions originating from all three free excitons A, B and C, specific to the wurtzite structure, have been observed and their evolution with the magnetic field determined. It is demonstrated that the magnitude of the exciton splittings evaluated from reflectivity-MCD data can be overestimated by more than a factor of 2, as compared to the values obtained by describing the polarization-resolved reflectivity spectra with appropriate dielectric functions. A series of model calculations shows that the quantitative inaccuracy of MCD originates from a substantial influence of the magnetization-dependent exchange interactions not only on the spin splittings of excitons but also upon their linewidth and oscillator strength. At the same time, a method is proposed that allows to evaluate the field and temperature dependencies of the magnetization from MCD spectra. The accurate values of the excitonic splittings and of the magnetization reported here substantiate the magnitudes of the apparent $sp-d$ exchange integrals in (Ga,Fe)N previously determined.
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Submitted 9 October, 2014; v1 submitted 31 May, 2013;
originally announced May 2013.
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Origin of low-temperature magnetic ordering in Ga1-xMnxN
Authors:
M. Sawicki,
T. Devillers,
S. Gałȩski,
C. Simserides,
S. Dobkowska,
B. Faina,
A. Grois,
A. Navarro-Quezada,
K. N. Trohidou,
J. A. Majewski,
T. Dietl,
A. Bonanni
Abstract:
By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy…
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By employing highly sensitive millikelvin SQUID magnetometry, the magnitude of the Curie temperature as a function of the Mn concentration x is determined for thoroughly characterized Ga1-xMnxN. The interpretation of the results in the frame of tight binding theory and of Monte Carlo simulations, allows us to assign the spin interaction to ferromagnetic superexchange and to benchmark the accuracy of state-of-the-art ab initio methods in predicting the magnetic characteristics of dilute magnetic insulators.
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Submitted 29 February, 2012; v1 submitted 28 February, 2012;
originally announced February 2012.
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The Fe-Mg interplay and the effect of deposition mode in (Ga,Fe)N doped with Mg
Authors:
A. Navarro-Quezada,
N. Gonzalez Szwacki,
W. Stefanowicz,
Tian Li,
A. Grois,
T. Devillers,
R. Jakiela,
B. Faina,
J. A. Majewski,
M. Sawicki,
T. Dietl,
A. Bonanni
Abstract:
The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the case of (Ga,Fe)N layers obtained without any codoping by shallow impurities. The structural analysis of the layers by high-resolution transmission electron mic…
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The effect of Mg codoping and its deposition mode on the Fe distribution in (Ga,Fe)N layers grown by metalorganic vapor phase epitaxy is investigated. Both homogeneously- and digitally-Mg codoped samples are considered and contrasted to the case of (Ga,Fe)N layers obtained without any codoping by shallow impurities. The structural analysis of the layers by high-resolution transmission electron microscopy and by high-resolution- and synchrotron x-ray diffraction gives evidence of the fact that in the case of homogenous-Mg doping, Mg and Fe competitively occupy the Ga-substitutional cation sites, reducing the efficiency of Fe incorporation. Accordingly, the character of the magnetization is modified from ferromagnetic-like in the non-codoped films to paramagnetic in the case of homogeneous Mg codoping. The findings are discussed vis-`a-vis theoretical results obtained by ab initio computations, showing only a weak effect of codoping on the pairing energy of two Fe cations in bulk GaN. However, according to these computations, codoping reverses the sign of the paring energy of Fe cations at the Ga-rich surface, substantiating the view that the Fe aggregation occurs at the growth surface. In contrast to the homogenous deposition mode, the digital one is found to remarkably promote the aggregation of the magnetic ions. The Fe-rich nanocrystals formed in this way are distributed non-uniformly, giving reason for the observed deviation from a standard superparamagnetic behavior.
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Submitted 25 July, 2011;
originally announced July 2011.
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Effects of s,p - d and s - p exchange interactions probed by exciton magnetospectroscopy in (Ga,Mn)N
Authors:
J. Suffczynski,
A. Grois,
W. Pacuski,
A. Golnik,
J. A. Gaj,
A. Navarro-Quezada,
B. Faina,
T. Devillers,
A. Bonanni
Abstract:
Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination…
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Near band-gap photoluminescence and reflectivity in magnetic field are employed to determine the exchange-induced splitting of free exciton states in paramagnetic wurtzite Ga1-xMnxN, x < 1%, grown on sapphire substrates by metal-organic vapor phase epitaxy. The band gap is found to increase with x. The giant Zeeman splitting of all three excitons A, B and C is resolved, enabling the determination of the apparent exchange integrals N0alpha(app) = 0.0 +/- 0.1 eV and N0beta(app) = +0.8 +/- 0.2 eV. These non-standard values and signs of the s - d and p - d exchange energies are explained in terms of recent theories that suggest a contribution of the electron-hole exchange to the spin splitting of the conduction band and a renormalization of the free hole spin-splitting by a large p - d hybridization. According to these models, in the limit of a strong p - d coupling, the band gap of (Ga,Mn)N increases with x and the order of hole spin subbands is reversed, as observed.
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Submitted 22 November, 2010;
originally announced November 2010.
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Element specific characterization of heterogeneous magnetism in (Ga,Fe)N films
Authors:
I. A. Kowalik,
A. Persson,
M. Á. Niño,
A. Navarro-Quezada,
B. Faina,
A. Bonanni,
T. Dietl,
D. Arvanitis
Abstract:
We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signa…
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We employ x-ray spectroscopy to characterize the distribution and magnetism of particular alloy constituents in (Ga,Fe)N films grown by metal organic vapor phase epitaxy. Furthermore, photoelectron microscopy gives direct evidence for the aggregation of Fe ions, leading to the formation of Fe-rich nanoregions adjacent to the samples surface. A sizable x-ray magnetic circular dichroism (XMCD) signal at the Fe L-edges in remanence and at moderate magnetic fields at 300 K links the high temperature ferromagnetism with the Fe(3d) states. The XMCD response at the N K-edge highlights that the N(2p) states carry considerable spin polarization. We conclude that FeNδ nanocrystals, with δ> 0.25, stabilize the ferromagnetic response of the films.
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Submitted 3 November, 2010;
originally announced November 2010.
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Experimental probing of exchange interactions between localized spins in the dilute magnetic insulator (Ga,Mn)N
Authors:
A. Bonanni,
M. Sawicki,
T. Devillers,
W. Stefanowicz,
B. Faina,
Tian Li,
T. E. Winkler,
D. Sztenkiel,
A. Navarro-Quezada,
M. Rovezzi,
R. Jakiela,
A. Grois,
M. Wegscheider,
W. Jantsch,
J. Suffczynski,
F. D'Acapito,
A. Meingast,
G. Kothleitner,
T. Dietl
Abstract:
The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and ele…
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The sign, magnitude, and range of the exchange couplings between pairs of Mn ions is determined for (Ga,Mn)N and (Ga,Mn)N:Si with x < 3%. The samples have been grown by metalorganic vapor phase epitaxy and characterized by secondary-ion mass spectroscopy; high-resolution transmission electron microscopy with capabilities allowing for chemical analysis, including the annular dark-field mode and electron energy loss spectroscopy; high-resolution and synchrotron x-ray diffraction; synchrotron extended x-ray absorption fine-structure; synchrotron x-ray absorption near-edge structure; infra-red optics and electron spin resonance. The results of high resolution magnetic measurements and their quantitative interpretation have allowed to verify a series of ab initio predictions on the possibility of ferromagnetism in dilute magnetic insulators and to demonstrate that the interaction changes from ferromagnetic to antiferromagnetic when the charge state of the Mn ions is reduced from 3+ to 2+.
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Submitted 20 June, 2011; v1 submitted 12 August, 2010;
originally announced August 2010.
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Embedded magnetic phases in (Ga,Fe)N: the key role of growth temperature
Authors:
A. Navarro-Quezada,
W. Stefanowicz,
Tian Li,
B. Faina,
M. Rovezzi,
R. T. Lechner,
T. Devillers,
F. d'Acapito,
G. Bauer,
M. Sawicki,
T. Dietl,
A. Bonanni
Abstract:
The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and absorption, transmission electron microscopy, and superconducting quantum interference device magnetometry as a function of the growth temperature $T_{\mathrm{g}}$. Three contributions to the magnetization are identifi…
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The local chemistry, structure, and magnetism of (Ga,Fe)N nanocomposites grown by metal organic vapor phase epitaxy is studied by high resolution synchrotron x-ray diffraction and absorption, transmission electron microscopy, and superconducting quantum interference device magnetometry as a function of the growth temperature $T_{\mathrm{g}}$. Three contributions to the magnetization are identified: i) paramagnetic -- originating from dilute and non-interacting Fe$^{3+}$ ions substitutional of Ga, and dominating in layers obtained at the lowest considered $T_{\mathrm{g}}$ (800$^{\circ}$C); ii) superparamagnetic-like -- brought about mainly by ferromagnetic nanocrystals of $ε-$Fe$_3$N but also by $γ'$-Fe$_4$N and by inclusions of elemental $α$- and $γ$-Fe, and prevalent in films obtained in the intermediate $T_{\mathrm{g}}$ range; iii) component linear in the magnetic field and associated with antiferromagnetic interactions -- found to originate from highly nitridated Fe$_x$N ($x \leq$ 2) phases, like $ζ$-Fe$_2$N, and detected in samples deposited at the highest employed temperature, $T_{\mathrm{g}}$ = 950$^{\circ}$C. Furthermore, depending on $T_{\mathrm{g}}$, the Fe-rich nanocrystals segregate towards the sample surface or occupy two-dimensional planes perpendicular to the growth direction.
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Submitted 29 January, 2010;
originally announced January 2010.
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Structural and paramagnetic properties of dilute Ga1-xMnxN
Authors:
Wiktor Stefanowicz,
Dariusz Sztenkiel,
Bogdan Faina,
Andreas Grois,
Mauro Rovezzi,
Thibaut Devillers,
Francesco d'Acapito,
Andrea Navarro-Quezada,
Tian Li,
Rafal Jakiela,
Maciej Sawicki,
Tomasz Dietl,
Alberta Bonanni
Abstract:
Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites i…
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Systematic investigations of the structural and magnetic properties of single crystal (Ga,Mn)N films grown by metal organic vapor phase epitaxy are presented. High resolution transmission electron microscopy, synchrotron x-ray diffraction, and extended x-ray absorption fine structure studies do not reveal any crystallographic phase separation and indicate that Mn occupies Ga-substitutional sites in the Mn concentration range up to 1%. The magnetic properties as a function of temperature, magnetic field and its orientation with respect to the c-axis of the wurtzite structure can be quantitatively described by the paramagnetic theory of an ensemble of non-interacting Mn$^{3+}$ ions in the relevant crystal field, a conclusion consistent with the x-ray absorption near edge structure analysis. A negligible contribution of Mn in the 2+ charge state points to a low concentration of residual donors in the studied films. Studies on modulation doped p-type (Ga,Mn)N/(Ga,Al)N:Mg heterostructures do not reproduce the high temperature robust ferromagnetism reported recently for this system.
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Submitted 21 July, 2011; v1 submitted 21 December, 2009;
originally announced December 2009.
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Local structure of (Ga,Fe)N and (Ga,Fe)N:Si investigated by x-ray absorption fine structure spectroscopy
Authors:
Mauro Rovezzi,
Francesco D'Acapito,
Andrea Navarro-Quezada,
Bogdan Faina,
Tian Li,
Alberta Bonanni,
Francesco Filippone,
Aldo Amore Bonapasta,
Tomasz Dietl
Abstract:
X-ray absorption fine-structure (XAFS) measurements supported by {\em ab initio} computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe and Si-co-doped films grown by metalorganic vapour phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites…
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X-ray absorption fine-structure (XAFS) measurements supported by {\em ab initio} computations within the density functional theory (DFT) are employed to systematically characterize Fe-doped as well as Fe and Si-co-doped films grown by metalorganic vapour phase epitaxy. The analysis of extended-XAFS data shows that depending on the growth conditions, Fe atoms either occupy Ga substitutional sites in GaN or precipitate in the form of $ε$-Fe$_3$N nanocrystals, which are ferromagnetic and metallic according to the DFT results. Precipitation can be hampered by reducing the Fe content, or by increasing the growth rate or by co-doping with Si. The near-edge region of the XAFS spectra provides information on the Fe charge state and shows its partial reduction from Fe$^{+3}$ to Fe$^{+2}$ upon Si co-doping, in agreement with the Fe electronic configurations expected within various implementations of DFT.
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Submitted 1 March, 2009; v1 submitted 26 February, 2009;
originally announced February 2009.
