Showing 1–15 of 15 results for author: Evans, D M

Local doping of an oxide semiconductor by voltage-driven splitting of anti-Frenkel defects

Authors: Jiali He, Ursula Ludacka, Kasper A. Hunnestad, Didrik R. Småbråten, Konstantin Shapovalov, Per Erik Vullum, Constantinos Hatzoglou, Donald M. Evans, Erik D. Roede, Zewu Yan, Edith Bourret, Sverre M. Selbach, David Gao, Jaakko Akola, Dennis Meier

Abstract: Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orde… ▽ More Layered oxides exhibit high ionic mobility and chemical flexibility, attracting interest as cathode materials for lithium-ion batteries and the pairing of hydrogen production and carbon capture. Recently, layered oxides emerged as highly tunable semiconductors. For example, by introducing anti-Frenkel defects, the electronic hopping conductance in hexagonal manganites was increased locally by orders of magnitude. Here, we demonstrate local acceptor and donor doping in Er(Mn,Ti)O$_3$, facilitated by the splitting of such anti-Frenkel defects under applied d.c. voltage. By combining density functional theory calculations, scanning probe microscopy, atom probe tomography, and scanning transmission electron microscopy, we show that the oxygen defects readily move through the layered crystal structure, leading to nano-sized interstitial-rich (p-type) and vacancy-rich (n-type) regions. The resulting pattern is comparable to dipolar npn-junctions and stable on the timescale of days. Our findings reveal the possibility of temporarily functionalizing oxide semiconductors at the nanoscale, giving additional opportunities for the field of oxide electronics and the development of transient electronics in general. △ Less

Submitted 11 February, 2025; originally announced February 2025.

Easy-cone state mediating the spin reorientation in topological kagome magnet Fe$_3$Sn$_2$

Authors: L. Prodan, D. M. Evans, A. S. Sukhanov, S. E. Nikitin, A. A. Tsirlin, L. Puntingam, M. C. Rahn, L. Chioncel, V. Tsurkan, I. Kezsmarki

Abstract: We investigated temperature-driven spin reorientation (SR) in the itinerant kagome magnet Fe$_3$Sn$_2$ using high-resolution synchrotron x-ray diffraction, neutron diffraction, magnetometry, and magnetic force microscopy (MFM), further supported by phenomenological analysis. Our study reveals a crossover from the state with easy-plane anisotropy to the high-temperature state with uniaxial easy-axi… ▽ More We investigated temperature-driven spin reorientation (SR) in the itinerant kagome magnet Fe$_3$Sn$_2$ using high-resolution synchrotron x-ray diffraction, neutron diffraction, magnetometry, and magnetic force microscopy (MFM), further supported by phenomenological analysis. Our study reveals a crossover from the state with easy-plane anisotropy to the high-temperature state with uniaxial easy-axis anisotropy taking place between $\sim40-130$~ K through an intermediate easy-cone (or tilted spin) state. This state, induced by the interplay between the anisotropy constants $K_1$ and $K_2$, is clearly manifested in the thermal evolution of the magnetic structure factor, which reveals a gradual change of the SR angle $\mathbfθ$ between $40-130$~K. We also found that the SR is accompanied by a magnetoelastic effect. Zero-field MFM images across the SR range show a transformation in surface magnetic patterns from a dendritic structure at 120~K, to domain wall dominated MFM contrast at 40~K. △ Less

Submitted 5 February, 2025; originally announced February 2025.

Comments: 24 pages, 5 figures, 75 references

Magnetoelectric coupling at the domain level in polycrystalline ErMnO3

Authors: J. Schultheiß, L. Puntigam, M. Winkler, S. Krohns, D. Meier, H. Das, D. M. Evans, I. Kézsmárki

Abstract: We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, f… ▽ More We explore the impact of a magnetic field on the ferroelectric domain pattern in polycrystalline hexagonal ErMnO3 at cryogenic temperatures. Utilizing piezoelectric force microscopy measurements at 1.65 K, we observe modifications of the topologically protected ferroelectric domain structure induced by the magnetic field. These alterations likely result from strain induced by the magnetic field, facilitated by intergranular coupling in polycrystalline multiferroics. Our findings give insights into the interplay between electric and magnetic properties at the local scale and represent a so far unexplored pathway for manipulating topologically protected ferroelectric vortex patterns in hexagonal manganites. △ Less

Submitted 19 March, 2024; originally announced March 2024.

Post-synthesis tuning of dielectric constant via ferroelectric domain wall engineering

Authors: L. Zhou, L. Puntigam, P. Lunkenheimer, E. Bourret, Z. Yan, I. Kézsmárki, D. Meier, S. Krohns, J. Schultheiß, D. M. Evans

Abstract: A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the pote… ▽ More A promising mechanism for achieving colossal dielectric constants is to use insulating internal barrier layers, which typically form during synthesis and then remain in the material. It has recently been shown that insulating domain walls in ferroelectrics can act as such barriers. One advantage domain walls have, in comparison to stationary interfaces, is that they can be moved, offering the potential of post-synthesis control of the dielectric constant. However, to date, direct imaging of how changes in domain wall pattern cause a change in dielectric constant within a single sample has not been realized. In this work, we demonstrate that changing the domain wall density allows the engineering of the dielectric constant in hexagonal-ErMnO3 single crystals. The changes of the domain wall density are quantified via microscopy techniques, while the dielectric constant is determined via macroscopic dielectric spectroscopy measurements. The observed changes in the dielectric constant are quantitatively consistent with the observed variation in domain wall density, implying that the insulating domain walls behave as 'ideal' capacitors connected in series. Our approach to engineer the domain wall density can be readily extended to other control methods, e.g., electric fields or mechanical stresses, providing a novel degree of flexibility to in-situ tune the dielectric constant. △ Less

Submitted 19 January, 2024; originally announced January 2024.

Journal ref: Matter 7 (2024), 2996

Direct imaging of spatial heterogeneities in type II superconductors

Authors: Donald M. Evans, Michele Conroy, Lukas Puntigam, Dorina Croitori, Lilian Prodan, James O. Douglas, Baptiste Gault, Vladimir Tsurkan

Abstract: Understanding the exotic properties of quantum materials, including high-temperature superconductors, remains a formidable challenge that demands direct insights into electronic conductivity. Current methodologies either capture a bulk average or near-atomically-resolved information, missing direct measurements at the critical intermediate length scales. Here, using the superconductor Fe(Se,Te) as… ▽ More Understanding the exotic properties of quantum materials, including high-temperature superconductors, remains a formidable challenge that demands direct insights into electronic conductivity. Current methodologies either capture a bulk average or near-atomically-resolved information, missing direct measurements at the critical intermediate length scales. Here, using the superconductor Fe(Se,Te) as a model system, we use low-temperature conductive atomic force microscopy (cAFM) to bridge this gap. Contrary to the uniform superconductivity anticipated from bulk assessments, cAFM uncovers micron-scale conductive intrusions within a relatively insulating matrix. Subsequent compositional mapping through atom probe tomography, shows that differences in conductivity correlated with local changes in composition. cAFM, supported by advanced microscopy and microanalysis, represents a methodological breakthrough that can be used to navigate the intricate landscape of high-temperature superconductors and the broader realm of quantum materials. Such fundamental information is critical for theoretical understanding and future guided design. △ Less

Submitted 30 October, 2023; originally announced October 2023.

Large ordered moment with strong easy-plane anisotropy and vortex-domain pattern in the kagome ferromagnet Fe$_3$Sn

Authors: Lilian Prodan, Donald M. Evans, Sinéad M. Griffin, Andreas Östlin, Markus Altthaler, Erik Lysne, Irina G. Filippova, Serghei Shova, Liviu Chioncel, Vladimir Tsurkan, István Kézsmárki

Abstract: We report the structural and magnetic properties of high-quality bulk single crystals of the kagome ferromagnet Fe$_3$Sn. The dependence of magnetisation on the magnitude and orientation of the external field reveals strong easy-plane type uniaxial magnetic anisotropy, which shows a monotonous increase from $K_1=-0.99\times 10^6 J/m^3$ at 300\,K to $-1.23\times10^6 J/m^3$ at 2\,K. Our \textit{ab i… ▽ More We report the structural and magnetic properties of high-quality bulk single crystals of the kagome ferromagnet Fe$_3$Sn. The dependence of magnetisation on the magnitude and orientation of the external field reveals strong easy-plane type uniaxial magnetic anisotropy, which shows a monotonous increase from $K_1=-0.99\times 10^6 J/m^3$ at 300\,K to $-1.23\times10^6 J/m^3$ at 2\,K. Our \textit{ab initio} electronic structure calculations yield the value of total magnetic moment of about 6.9 $μ_B$/f.u. and a magnetocrystalline anisotropy energy density of 0.406\,meV/f.u. ($1.16\times10^6 J/m^3$) both being in good agreement with the experimental values. The self-consistent DFT computations for the components of the spin/orbital moments indicate that the small difference between the saturation magnetisations measured along and perpendicular to the kagome layers results from the subtle balance between the Fe and Sn spin/orbital moments on the different sites. In zero field, magnetic force microscopy reveals micrometer-scale magnetic vortices with weakly pinned cores that vanish at $\sim$3\,T applied perpendicular to the kagome plane. Our micromagnetic simulations, using the experimentally determined value of anisotropy, well reproduce the observed vortex-domain structure. The present study, in comparison with the easy-axis ferromagnet Fe$_3$Sn$_2$, shows that varying the stacking of kagome layers provides an efficient control over magnetic anisotropy in this family of Fe-based kagome magnets. △ Less

Submitted 6 February, 2023; originally announced February 2023.

Comments: 10 pages, 5 figures

Strain driven conducting domain walls in a Mott insulator

Authors: L. Puntigam, M. Altthaler, S. Ghara, L. Prodan, V. Tsurkan, S. Krohns, I. Kézsmárki, D. M. Evans

Abstract: Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can be created, positioned, and deleted in situ. However, the study of conductive domain walls is largely limited to wide-gap ferroelectrics, where the conductivity… ▽ More Rewritable nanoelectronics offers new perspectives and potential to both fundamental research and technological applications. Such interest has driven the research focus into conducting domain walls: pseudo 2D conducting channels that can be created, positioned, and deleted in situ. However, the study of conductive domain walls is largely limited to wide-gap ferroelectrics, where the conductivity typically arises from changes in charge carrier density, due to screening charge accumulation at polar discontinuities. This work shows that, in narrow-gap correlated insulators with strong charge lattice coupling, local strain gradients can drive enhanced conductivity at the domain walls, removing polar discontinuities as a criteria for conductivity. By combining different scanning probe microscopy techniques, we demonstrate that the domain wall conductivity in GaV4S8 does not follow the established screening charge model but rather arises from the large surface reconstruction across the Jahn-Teller transition and the associated strain gradients across the domain walls. This mechanism can turn any structural, or even magnetic, domain wall conducting, if the electronic structure of the host is susceptible to local strain gradients, drastically expanding the range of materials and phenomena that may be applicable to domain wall based nanoelectronics. △ Less

Submitted 27 April, 2022; originally announced April 2022.

Resolving structural changes and symmetry lowering in spinel FeCr2S4

Authors: Donald M. Evans, Ola G. Grendal, Lilian Prodan, Maximilian Winkler, Noah Winterhalter-Stocker, Philipp Gegenwart, Somnath Ghara, Joachim Deisenhofer, István Kézsmárki, Vladimir Tsurkan

Abstract: The cubic spinel FeCr2S4 has been receiving immense research interest because of its emergent phases and the interplay of spin, orbital and lattice degrees of freedom. Despite the intense research, several fundamental questions are yet to be answered, such as the refinement of the crystal structure in the different magnetic and orbital ordered phases. Here, using high-resolution synchrotron powder… ▽ More The cubic spinel FeCr2S4 has been receiving immense research interest because of its emergent phases and the interplay of spin, orbital and lattice degrees of freedom. Despite the intense research, several fundamental questions are yet to be answered, such as the refinement of the crystal structure in the different magnetic and orbital ordered phases. Here, using high-resolution synchrotron powder diffraction on stoichiometric crystals of FeCr2S4 we resolved the long sought-after cubic to tetragonal transition at ~65 K, reducing the lattice symmetry to I41/amd. With further lowering the temperature, at ~9 K, the crystal structure becomes polar, hence the compound becomes multiferroic. The elucidation of the lattice symmetry throughout different phases of FeCr2S4 provides a basis for the understanding this enigmatic system and also highlights the importance of structural deformation in correlated materials. △ Less

Submitted 1 March, 2022; originally announced March 2022.

Comments: 10 pages, 6 figures

Contact-free reversible switching of improper ferroelectric domains by electron and ion irradiation

Authors: Erik D. Roede, Aleksander B. Mosberg, Donald M. Evans, Edith Bourret, Zewu Yan, Antonius T. J. van Helvoort, Dennis Meier

Abstract: Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals… ▽ More Focused ion beam (FIB) and scanning electron microscopy (SEM) are used to reversibly switch improper ferroelectric domains in the hexagonal manganite ErMnO$_3$. Surface charging is achieved by local ion (positive charging) and electron (positive and negative charging) irradiation, which allows controlled polarization switching without the need for electrical contacts. Polarization cycling reveals that the domain walls tend to return to the equilibrium configuration obtained in the as-grown state. The electric field response of sub-surface domains is studied by FIB cross-sectioning, revealing the 3D switching behavior. The results clarify how the polarization reversal in hexagonal manganites progresses at the level of domains, resolving both domain wall movements and the nucleation and growth of new domains. Our FIB-SEM based switching approach is applicable to all ferroelectrics where a sufficiently large electric field can be built up via surface charging, facilitating contact-free high-resolution studies of the domain and domain wall response to electric fields in 3D. △ Less

Submitted 1 December, 2020; originally announced December 2020.

Effect of pseudo-cubic (111)-oriented orthorhombic substrate facets on perovskite oxide thin film synthesis

Authors: K. Kjærnes, T. Bolstad, D. M. Evans, E. Lysne, B. A. D. Williamson, D. Meier, S. M. Selbach, T. Tybell

Abstract: Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthor… ▽ More Strain engineering with different substrate facets is promising for tuning functional properties of thin film perovskite oxides. By choice of facet, different surface symmetries and chemical bond directions for epitaxial interfaces can be tailored. Here, preparation of well-defined pseudo-cubic (111)-oriented orthorhombic substrates of DyScO3 , GdScO3 , and NdGaO3 is reported. The choice of orthorhombic facet, (011)o or (101)o , both corresponding to pseudo-cubic (111)pc , gives vicinal surfaces with single or double (111pc layer terrace step heights, respectively, impacting subsequent thin film growth. Orthorhombic LaFeO3 epitaxy on the (101)o facet reveals a distinction between alternating (111)pc layers, both during and after growth. The observed differences are explained based on the oxygen octahedral tilt pattern relative to the two orthorhombic (111)pc surfaces. This robust structural detail in the orthorhombic perovskite oxides enables utilisation of different (111)pc facets for property engineering, through polyhedral connectivity control and cation coordination at epitaxial interfaces. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Insulating improper ferroelectric domain walls as robust barrier layer capacitors

Authors: Lukas Puntigam, Jan Schultheiß, Ana Strinic, Zewu Yan, Edith Bourret, Markus Altthaler, Istvan Kezsmarki, Donald M. Evans, Dennis Meier, Stephan Krohns

Abstract: We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second o… ▽ More We report the dielectric properties of improper ferroelectric h-ErMnO$_3$. From the bulk characterisation we observe a temperature and frequency range with two distinct relaxation-like features, leading to high and even 'colossal' values for the dielectric permittivity. One feature trivially originates from the formation of a Schottky barrier at the electrode-sample interface, whereas the second one relates to an internal barrier layer capacitance (BLC). The calculated volume fraction of the internal BLC (of 8 %) is in good agreement with the observed volume fraction of insulating domain walls (DWs). While it is established that insulating DWs can give rise to high dielectric constants, studies typically focused on proper ferroelectrics where electric fields can remove the DWs. In h-ErMnO$_3$, by contrast, the insulating DWs are topologically protected, facilitating operation under substantially higher electric fields. Our findings provide the basis for a conceptually new approach to engineer materials exhibiting colossal dielectric permittivities using domain walls in improper ferroelecctrics with potential applications in electroceramic capacitors. △ Less

Submitted 20 November, 2020; originally announced November 2020.

Comments: 7 pages, 4 figures

Controlling local resistance via electric-field induced dislocations

Authors: D. M. Evans, D. R. Småbråten, T. S. Holstad, P. E. Vullum, A. B. Mosberg, Z. Yan, E. Bourret, A. T. J. Van Helvoort, S. M. Selbach, D. Meier

Abstract: Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations… ▽ More Dislocations are one-dimensional (1D) topological line defects where the lattice deviates from the perfect crystal structure. The presence of dislocations transcends condensed matter research and gives rise to a diverse range of emergent phenomena [1-6], ranging from geological effects [7] to light emission from diodes [8]. Despite their ubiquity, to date, the controlled formation of dislocations is usually achieved via strain fields, applied either during growth [9,10] or retrospectively via deformation, e.g., (nano [11-14])-indentation [15]. Here we show how partial dislocations can be induced using local electric fields, altering the structure and electronic response of the material where the field is applied. By combining high-resolution imaging techniques and density functional theory calculations, we directly image these dislocations in the ferroelectric hexagonal manganite Er(Ti,Mn)O3 and study their impact on the local electric transport behaviour. The use of an electric field to induce partial dislocations is a conceptually new approach to the burgeoning field of emergent defect-driven phenomena and enables local property control without the need of external macroscopic strain fields. This control is an important step towards integrating and functionalising dislocations in practical devices for future oxide electronics. △ Less

Submitted 26 June, 2020; originally announced June 2020.

Comments: 20 pages, 7 figures

Electronic bulk and domain wall properties in B-site doped hexagonal ErMnO$_3$

Authors: T. S. Holstad, D. M. Evans, A. Ruff, D. R. Smaabraaten, J. Schaab, Ch. Tzschaschel, Z. Yan, E. Bourret, S. M. Selbach, S. Krohns, D. Meier

Abstract: Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti… ▽ More Acceptor and donor doping is a standard for tailoring semiconductors. More recently, doping was adapted to optimize the behavior at ferroelectric domain walls. In contrast to more than a century of research on semiconductors, the impact of chemical substitutions on the local electronic response at domain walls is largely unexplored. Here, the hexagonal manganite ErMnO$_3$ is donor doped with Ti$^{4+}$. Density functional theory calculations show that Ti$^{4+}$ goes to the B-site, replacing Mn$^{3+}$. Scanning probe microscopy measurements confirm the robustness of the ferroelectric domain template. The electronic transport at both macro- and nanoscopic length scales is characterized. The measurements demonstrate the intrinsic nature of emergent domain wall currents and point towards Poole-Frenkel conductance as the dominant transport mechanism. Aside from the new insight into the electronic properties of hexagonal manganites, B-site doping adds an additional degree of freedom for tuning the domain wall functionality. △ Less

Submitted 16 October, 2017; originally announced October 2017.

Journal ref: Phys. Rev. B 97, 085143 (2018)

Hydrodynamics of Domain Walls in Multiferroics: Impact on Memory Devices

Authors: James F. Scott, Donald M. Evans, J. Marty Gregg, Alexei Gruverman

Abstract: We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-… ▽ More We show that switching in ferroelectric lead germanate and lead iron tantalate zirconate titanate (PZTFT) does not resemble the equilibrium domain structure evolution of the Landau-Lifshitz-Kittel model but is instead highly nonequilibrium and similar, respectively, to the Richtmyer-Meshkov instability in liquids and the Helfrich-Hursault sliding instability in liquid crystals. The resulting nano-domain structures in PZTFT are circular or parabolic and involving folding bifurcations. These may have an undesirable impact on ferroelectric thin-film memoriesthat are also ferroelastic. △ Less

Submitted 11 June, 2016; originally announced June 2016.

Comments: 17 pp, three multi-part figures; 35 references; unpublished

The Synthesis, Structure and Electronic Properties of a Lead-Free Hybrid Inorganic-Organic Double Perovskite (MA)2KBiCl6 (MA = methylammonium)

Authors: Fengxia Wei, Zeyu Deng, Shijing Sun, Fei Xie, Gregor Kieslich, Donald M. Evans, Michael A. Carpenter, Paul D. Bristowe, Anthony K. Cheetham

Abstract: In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interest… ▽ More In a search for Lead-free materials that could be used as alternatives to the hybrid perovskites,(MA)PbX3, in photovoltaic applications, we have discovered a hybrid double perovskite, (MA)2KBiCl6, which shows striking similarities to the lead analogues. Spectroscopic measurements and nanoindentation studies are combined with density functional calculations to reveal the properties of this interesting system. △ Less

Submitted 1 March, 2016; originally announced March 2016.