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Monolithic thin-film chalcogenide-silicon tandem solar cells enabled by a diffusion barrier
Authors:
Alireza Hajijafarassar,
Filipe Martinho,
Fredrik Stulen,
Sigbjørn Grini,
Simón López-Mariño,
Moises Espíndola-Rodríguez,
Max Döbeli,
Stela Canulescu,
Eugen Stamate,
Mungunshagai Gansukh,
Sara Engberg,
Andrea Crovetto,
Lasse Vines,
Jørgen Schou,
Ole Hansen
Abstract:
Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage…
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Following the recent success of monolithically integrated Perovskite/Si tandem solar cells, great interest has been raised in searching for alternative wide bandgap top-cell materials with prospects of a fully earth-abundant, stable and efficient tandem solar cell. Thin film chalcogenides (TFCs) such as the Cu2ZnSnS4 (CZTS) could be suitable top-cell materials. However, TFCs have the disadvantage that generally at least one high temperature step (>500 C) is needed during the synthesis, which could contaminate the Si bottom cell. Here, we systematically investigate the monolithic integration of CZTS on a Si bottom solar cell. A thermally resilient double-sided Tunnel Oxide Passivated Contact (TOPCon) structure is used as bottom cell. A thin (<25 nm) TiN layer between the top and bottom cells, doubles as diffusion barrier and recombination layer. We show that TiN successfully mitigates in-diffusion of CZTS elements into the c-Si bulk during the high temperature sulfurization process, and find no evidence of electrically active deep Si bulk defects in samples protected by just 10 nm TiN. Post-process minority carrier lifetime in Si exceeded 1.5 ,s. i.e., a promising implied open-circuit voltage (i-Voc) of 715 mV after the high temperature sulfurization. Based on these results, we demonstrate a first proof-of-concept two-terminal CZTS/Si tandem device with an efficiency of 1.1% and a Voc of 900 mV. A general implication of this study is that the growth of complex semiconductors on Si using high temperature steps is technically feasible, and can potentially lead to efficient monolithically integrated two-terminal tandem solar cells.
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Submitted 19 October, 2020;
originally announced October 2020.
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Persistent double layer formation in kesterite solar cells: a critical review
Authors:
Filipe Martinho,
Simon Lopez-Marino,
Moises Espíndola-Rodríguez,
Alireza Hajijafarassar,
Fredrik Stulen,
Sigbjørn Grini,
Max Döbeli,
Mungunshagai Gansukh,
Sara Engberg,
Eugen Stamate,
Lasse Vines,
Jørgen Schou,
Ole Hansen,
Stela Canulescu
Abstract:
In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate…
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In kesterite CZTSSe solar cell research, an asymmetric crystallization profile is often obtained after annealing, resulting in a bilayered or double-layered absorber. So far, only segregated pieces of research exist to characterize this double layer, its formation dynamics and its effect on the performance of devices. Here, we review the existing research on double-layered kesterites and evaluate the different mechanisms proposed. Using a cosputtering-based approach, we show that the two layers can differ significantly in morphology, composition and optoelectronic properties, and complement the results with a statistical dataset of over 850 individual CZTS solar cells. By reducing the absorber thickness from above 1000 nm to 300 nm, we show that the double layer segregation is alleviated. In turn, we see a progressive improvement in the device performance for lower thickness, which alone would be inconsistent with the known case of ultrathin CIGS solar cells. By comparing the results with CZTS grown on monocrystalline Si substrates, without a native Na supply, we show that the alkali metal supply does not determine the double layer formation, but merely reduces the threshold for its occurrence. Instead, we propose that the main formation mechanism is the early migration of Cu to the surface during annealing and formation of Cu2-xS phases, in a self-regulating process akin to the Kirkendall effect. We comment on the generality of the mechanism proposed, comparing our results to other synthesis routes, including our own in-house results from solution processing and pulsed laser deposition of sulfide and oxide-based targets. Although the double layer occurrence largely depends on the kesterite synthesis route, the common factors determining the double layer occurrence appear to be the presence of metallic Cu and/or a chalcogen deficiency in the precursor matrix.
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Submitted 16 October, 2020;
originally announced October 2020.
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Nitride-based interfacial layers for monolithic tandem integration of new solar energy materials on Si: The case of CZTS
Authors:
Filipe Martinho,
Alireza Hajijafarassar,
Simón Lopez-Marino,
Moises Espíndola-Rodríguez,
Sara Engberg,
Mungunshagai Gansukh,
Fredrik Stulen,
Sigbjørn Grini,
Stela Canulescu,
Eugen Stamate,
Andrea Crovetto,
Lasse Vines,
Jørgen Schou,
Ole Hansen
Abstract:
The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which t…
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The monolithic tandem integration of third-generation solar energy materials on silicon holds great promise for photoelectrochemistry and photovoltaics. However, this can be challenging when it involves high-temperature reactive processes, which would risk damaging the Si bottom cell. One such case is the high-temperature sulfurization/selenization in thin film chalcogenide solar cells, of which the kesterite Cu2ZnSnS4 (CZTS) is an example. Here, by using very thin (<10 nm) TiN-based diffusion barriers at the interface, with different composition and properties, we demonstrate on a device level that the protection of the Si bottom cell is largely dependent on the barrier layer engineering. Several monolithic CZTS/Si tandem solar cells with open-circuit voltages (Voc) up to 1.06 V and efficiencies up to 3.9% are achieved, indicating a performance comparable to conventional interfacial layers based on transparent conductive oxides, and pointing to a promising alternative design in solar energy conversion devices.
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Submitted 16 October, 2020;
originally announced October 2020.
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Multiwavelength excitation Raman Scattering Analysis of bulk and 2 dimensional MoS2: Vibrational properties of atomically thin MoS2 layers
Authors:
Marcel Placidi,
Mirjana Dimitrievska,
Victor Izquierdo-Roca,
Xavier Fontané,
Andres Castellanos-Gomez,
Amador Pérez-Tomás,
Narcis Mestres,
Moises Espindola-Rodriguez,
Simon López-Marino,
Markus Neuschitzer,
Veronica Bermudez,
Anatoliy Yaremko,
Alejandro Pérez-Rodríguez
Abstract:
In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to…
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In order to deepen in the knowledge of the vibrational properties of 2-dimensional MoS2 atomic layers, a complete and systematic Raman scattering analysis has been performed using both bulk single crystal MoS2 samples and atomically thin MoS2 layers. Raman spectra have been measured under non-resonant and resonant conditions using seven different excitation wavelengths from near-infrared (NIR) to ultraviolet (UV). These measurements have allowed to observe and identify 41 peaks, among which 22 have not been previously experimentally observed for this compound, characterizing the existence of different resonant excitation conditions for the different excitation wavelengths. This has also included the first analysis of resonant Raman spectra that are achieved using UV excitation conditions. In addition, the analysis of atomically thin MoS2 layers has corroborated the higher potential of UV resonant Raman scattering measurements for the non destructive assessment of 2 dimensional MoS2 samples. Analysis of the relative integral intensity of the additional first and second order peaks measured under UV resonant excitation conditions is proposed for the non destructive characterization of the thickness of the layers, complementing previous studies based on the changes of the peak frequencies.
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Submitted 10 June, 2015;
originally announced June 2015.
