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Discovery of topological Weyl fermion lines and drumhead surface states in a room temperature magnet
Authors:
Ilya Belopolski,
Kaustuv Manna,
Daniel S. Sanchez,
Guoqing Chang,
Benedikt Ernst,
Jiaxin Yin,
Songtian S. Zhang,
Tyler A. Cochran,
Nana Shumiya,
Hao Zheng,
Bahadur Singh,
Guang Bian,
Daniel Multer,
Maksim Litskevich,
Xiaoting Zhou,
Shin-Ming Huang,
Baokai Wang,
Tay-Rong Chang,
Su-Yang Xu,
Arun Bansil,
Claudia Felser,
Hsin Lin,
M. Zahid Hasan
Abstract:
Topological matter is known to exhibit unconventional surface states and anomalous transport owing to unusual bulk electronic topology. In this study, we use photoemission spectroscopy and quantum transport to elucidate the topology of the room temperature magnet Co$_2$MnGa. We observe sharp bulk Weyl fermion line dispersions indicative of nontrivial topological invariants present in the magnetic…
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Topological matter is known to exhibit unconventional surface states and anomalous transport owing to unusual bulk electronic topology. In this study, we use photoemission spectroscopy and quantum transport to elucidate the topology of the room temperature magnet Co$_2$MnGa. We observe sharp bulk Weyl fermion line dispersions indicative of nontrivial topological invariants present in the magnetic phase. On the surface of the magnet, we observe electronic wave functions that take the form of drumheads, enabling us to directly visualize the crucial components of the bulk-boundary topological correspondence. By considering the Berry curvature field associated with the observed topological Weyl fermion lines, we quantitatively account for the giant anomalous Hall response observed in our samples. Our experimental results suggest a rich interplay of strongly correlated electrons and topology in this quantum magnet.
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Submitted 30 March, 2020;
originally announced April 2020.
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Thickness dependence of the anomalous Hall effect in thin films of the topological semimetal Co$_2$MnGa
Authors:
Anastasios Markou,
Dominik Kriegner,
Jacob Gayles,
Liguo Zhang,
Yi-Cheng Chen,
Benedikt Ernst,
Yu-Hong Lai,
Walter Schnelle,
Ying-Hao Chu,
Yan Sun,
Claudia Felser
Abstract:
Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the rol…
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Topological magnetic semimetals promise large Berry curvature through the distribution of the topological Weyl nodes or nodal lines and further novel physics with exotic transport phenomena. We present a systematic study of the structural and magnetotransport properties of Co$_2$MnGa films from thin (20 nm) to bulk like behavior (80 nm), in order to understand the underlying mechanisms and the role on the topology. The magnetron sputtered Co$_2$MnGa films are $L$$2_{\mathrm {1}}$-ordered showing very good heteroepitaxy and a strain-induced tetragonal distortion. The anomalous Hall conductivity was found to be maximum at a value of 1138 S/cm, with a corresponding anomalous Hall angle of 13 %, which is comparatively larger than topologically trivial metals. There is a good agreement between the theoretical calculations and the Hall conductivity observed for the 80 nm film, which suggest that the effect is intrinsic. Thus, the Co$_2$MnGa compound manifests as a promising material towards topologically-driven spintronic applications.
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Submitted 7 August, 2019; v1 submitted 25 April, 2019;
originally announced April 2019.
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Epitaxial growth, structural characterization and exchange bias of non-collinear antiferromagnetic Mn$_{3}$Ir thin films
Authors:
James M. Taylor,
Edouard Lesne,
Anastasios Markou,
Fasil Kidane Dejene,
Benedikt Ernst,
Adel Kalache,
Kumari Gaurav Rana,
Neeraj Kumar,
Peter Werner,
Claudia Felser,
Stuart S. P. Parkin
Abstract:
Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic $γ$-Mn$_{3}$Ir in both (001)…
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Antiferromagnetic materials are of great interest for spintronics. Here we present a comprehensive study of the growth, structural characterization, and resulting magnetic properties of thin films of the non-collinear antiferromagnet Mn$_{3}$Ir. Using epitaxial engineering on MgO (001) and Al$_{2}$O$_{3}$ (0001) single crystal substrates, we control the growth of cubic $γ$-Mn$_{3}$Ir in both (001) and (111) crystal orientations, and discuss the optimization of growth conditions to achieve high-quality crystal structures with low surface roughness. Exchange bias is studied in bilayers, with exchange bias fields as large as -29 mT (equivalent to a unidirectional anisotropy constant of 11.5 nJ cm$^{-2}$) measured in Mn$_{3}$Ir (111) / permalloy heterostructures at room temperature. In addition, a distinct dependence of blocking temperature on in-plane crystallographic direction in Mn$_{3}$Ir (001) / Py bilayers is observed. These findings are discussed in the context of chiral antiferromagnetic domain structures, and will inform progress towards topological antiferromagnetic spintronic devices.
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Submitted 13 March, 2019;
originally announced March 2019.
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A three-dimensional magnetic topological phase
Authors:
Ilya Belopolski,
Daniel S. Sanchez,
Guoqing Chang,
Kaustuv Manna,
Benedikt Ernst,
Su-Yang Xu,
Songtian S. Zhang,
Hao Zheng,
Jiaxin Yin,
Bahadur Singh,
Guang Bian,
Daniel Multer,
Xiaoting Zhou,
Shin-Ming Huang,
Baokai Wang,
Arun Bansil,
Hsin Lin,
Claudia Felser,
M. Zahid Hasan
Abstract:
We use photoemission spectroscopy to discover the first topological magnet in three dimensions, the material Co$_2$MnGa.
We use photoemission spectroscopy to discover the first topological magnet in three dimensions, the material Co$_2$MnGa.
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Submitted 28 December, 2017;
originally announced December 2017.
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Manifestation of the Berry curvature in Co2TiSn Heusler films
Authors:
Benedikt Ernst,
Roshnee Sahoo,
Yan Sun,
Jayita Nayak,
Lukas Muechler,
Ajaya K. Nayak,
Nitesh Kumar,
Anastasios Markou,
Gerhard H. Fecher,
Claudia Felser
Abstract:
Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experiment…
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Various Co2 based Heusler compounds are predicted to be Weyl materials. These systems with broken symmetry possess a large Berry curvature, and introduce exotic transport properties. The present study on epitaxially grown Co2TiSn films is an initial approach to understand and explore this possibility. The anomalous Hall effect in the well-ordered Co2TiSn films has been investigated both experimentally and theoretically. The measured Hall conductivity is in good agreement to the calculated Berry curvature. Small deviations between them are due to the influence of skew scattering on the Hall effect. From theoretical point of view, the main contribution to the anomalous Hall effect originates from slightly gapped nodal lines, due to a symmetry reduction induced by the magnetization. It has been found that only part of the nodal lines contributed near to the anomalous Hall conductivity at a fixed Fermi energy which can be explained from a magnetic symmetry analysis. Furthermore, from hard x-ray photoelectron spectroscopy measurements, we establish the electronic structure in the film that is comparable to the theoretical density of states calculations. The present results provide deeper insight into the spintronics from the prospect of topology.
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Submitted 12 October, 2017;
originally announced October 2017.
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Compensated ferrimagnetic tetragonal Heusler thin films for antiferromagnetic spintronics
Authors:
Roshnee Sahoo,
Lukas Wollmann,
Susanne Selle,
Thomas Höche,
Benedikt Ernst,
Adel Kalache,
Chandra Shekhar,
Nitesh Kumar,
Stanislav Chadov,
Claudia Felser,
Stuart S. P. Parkin,
Ajaya K. Nayak
Abstract:
In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net magnetization but have the potential for large spin-polarization and strong out of plane magnetic anisot…
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In recent years, antiferromagnetic spintronics has received much attention since ideal antiferromagnets do not produce stray fields and are much more stable to external magnetic fields compared to materials with net magnetization. Akin to antiferromagnets, compensated ferrimagnets have zero net magnetization but have the potential for large spin-polarization and strong out of plane magnetic anisotropy, and, hence, are ideal candidates for high density memory applications. Here, we demonstrate that a fully compensated magnetic state with a tunable magnetic anisotropy is realized in Mn-Pt-Ga based tetragonal Heusler thin films. Furthermore, we show that a bilayer formed from a fully compensated and a partially compensated Mn-Pt-Ga layer, exhibits a large interfacial exchange bias up to room temperature. The present work establishes a novel design principle for spintronic devices that are formed from materials with similar elemental compositions and nearly identical crystal and electronic structures. Such devices are of significant practical value due to their improved properties such as thermal stability. The flexible nature of Heusler materials to achieve tunable magnetizations, and anisotropies within closely matched materials provides a new direction to the growing field of antiferromagnetic spintronics.
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Submitted 9 August, 2016;
originally announced August 2016.
