Showing 1–50 of 108 results for author: Eriksson, M A

Non-equilibrium Dynamics of Two-level Systems directly after Cryogenic Alternating Bias

Authors: V. Iaia, E. S. Joseph, S. Im, N. Hagopian, S. O'Kelley, C. Kim, N. Materise, S. Patra, V. Lordi, M. A. Eriksson, P. M. Voyles, K. G. Ray, Y. J. Rosen

Abstract: Two-level systems (TLSs) are tunneling states commonly found in amorphous materials that electrically couple to qubits, resonators, and vibrational modes in materials, leading to energy loss in those systems. Recent studies suggest that applying a large alternating electric field changes the oxide structure, potentially improving the performance of qubits and resonators. In this study, we probe th… ▽ More Two-level systems (TLSs) are tunneling states commonly found in amorphous materials that electrically couple to qubits, resonators, and vibrational modes in materials, leading to energy loss in those systems. Recent studies suggest that applying a large alternating electric field changes the oxide structure, potentially improving the performance of qubits and resonators. In this study, we probe the effect of alternating bias at cryogenic temperatures on TLS dynamics within amorphous oxide parallel-plate capacitors operating in the strongly coupled regime. We bias the TLSs in the capacitors using an electric field. This allows us to spectroscopically image TLSs and extract their densities and dipole moments. When an in-situ alternating bias is applied, the steady-state spectra from the standard TLS model disappear. Post-alternating bias TLS spectroscopy reveals transient behavior, in which the TLS frequency fluctuates on the order of minutes. Thermal cycling above 10 K reverses these effects, restoring the TLS spectrum to its original state, indicating a reversible mechanism. Importantly, the intrinsic loss tangent of the LC oscillator remains unchanged before and after the application of the alternating bias. We propose that the disappearance of the steady-state spectrum are caused by non-equilibrium energy build up from strain in the oxide film introduced by the pulsed voltage bias sequence. Understanding this non-equilibrium energy could inform future models of time-dependent TLS dynamics. △ Less

Submitted 30 September, 2025; v1 submitted 23 September, 2025; originally announced September 2025.

Comments: 13 pages, 9 figures

Report number: LLNL-JRNL-2011522

Statistical characterization of valley coupling in Si/SiGe quantum dots via $g$-factor measurements near a valley vortex

Authors: Benjamin D. Woods, Merritt P. Losert, Nasir R. Elston, M. A. Eriksson, S. N. Coppersmith, Robert Joynt, Mark Friesen

Abstract: The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized samplings of valley energy distributions tend to dramatically overestimate the average valley coupling. But we find that knowledge of the valley phase, in addi… ▽ More The presence of low-energy valley excitations in Si/SiGe heterostructures often causes spin qubits to fail. It is therefore important to develop robust protocols for characterizing the valley coupling. Here, we show that realistically sized samplings of valley energy distributions tend to dramatically overestimate the average valley coupling. But we find that knowledge of the valley phase, in addition to the valley splitting, can significantly improve our estimates. Motivated by this understanding, we propose a novel method to probe the valley phase landscape across the quantum well using simple $g$-factor measurements. An important calibration step in this procedure is to measure $g$ in a loop enclosing a valley vortex, where the valley phase winds by $\pm 2π$ around a zero of the valley splitting. This proposal establishes an important new tool for probing spin qubits, and it can be implemented in current experiments. △ Less

Submitted 7 July, 2025; originally announced July 2025.

Comments: 4+8 pages, 2+3 figures

Valley Splitting Correlations Across a Silicon Quantum Well

Authors: Jonathan C. Marcks, Emily Eagen, Emma C. Brann, Merritt P. Losert, Tali Oh, John Reily, Christopher S. Wang, Daniel Keith, Fahd A. Mohiyaddin, Florian Luthi, Matthew J. Curry, Jiefei Zhang, F. Joseph Heremans, Mark Friesen, Mark A. Eriksson

Abstract: Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the… ▽ More Quantum dots in SiGe/Si/SiGe heterostructures host coherent electron spin qubits, which are promising for future quantum computers. The silicon quantum well hosts near-degenerate electron valley states, creating a low-lying excited state that is known to reduce spin qubit readout and control fidelity. The valley energy splitting is dominated by the microscopic disorder in the SiGe alloy and at the Si/SiGe interfaces, and while Si devices are compatible with large-scale semiconductor manufacturing, achieving a uniformly large valley splitting energy across a many-qubit device spanning mesoscopic distances is an outstanding challenge. In this work we study valley splitting variations in a 1D quantum dot array manufactured by Intel. We observe correlations in valley splitting, at both sub-100nm (single gate) and >1μm (device) lengthscales, that are consistent with alloy disorder-dominated theory and simulation. Our results develop the mesoscopic understanding of Si/SiGe heterostructures necessary for scalable device design. △ Less

Submitted 8 August, 2025; v1 submitted 16 April, 2025; originally announced April 2025.

Comments: 10 pages, 6 figures

Omnidirectional shuttling to avoid valley excitations in Si/SiGe quantum wells

Authors: Róbert Németh, Vatsal K. Bandaru, Pedro Alves, Merritt P. Losert, Emma Brann, Owen M. Eskandari, Hudaiba Soomro, Avani Vivrekar, M. A. Eriksson, Mark Friesen

Abstract: Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter regions of low conduction-band valley energy splittings, due to the presence of random-alloy disorder in Si/SiGe quantum wells. Here, we theoretically explore tw… ▽ More Conveyor-mode shuttling is a key approach for implementing intermediate-range coupling between electron-spin qubits in quantum dots. Initial implementations are encouraging; however, long shuttling trajectories are guaranteed to encounter regions of low conduction-band valley energy splittings, due to the presence of random-alloy disorder in Si/SiGe quantum wells. Here, we theoretically explore two schemes for avoiding valley-state excitations at these valley-splitting minima, by allowing the electrons to detour around them. A multichannel shuttling scheme allows electrons to tunnel between parallel channels, while a two-dimensional (2D) shuttler provides full omnidirectional control. Using simulations, we estimate shuttling fidelities in these two schemes, obtaining a clear preference for the 2D shuttler. Based on such encouraging results, we propose a full qubit architecture based on 2D shuttling, which enables all-to-all connectivity within qubit plaquettes and high-fidelity communication between different plaquettes. △ Less

Submitted 10 May, 2025; v1 submitted 12 December, 2024; originally announced December 2024.

Comments: 16 pages, 4 figures

Bootstrapping, Autonomous Testing, and Initialization System for Si/SiGe Multi-quantum Dot Devices

Authors: Tyler J. Kovach, Daniel Schug, M. A. Wolfe, E. R. MacQuarrie, Patrick J. Walsh, Owen M. Eskandari, Jared Benson, Mark Friesen, M. A. Eriksson, Justyna P. Zwolak

Abstract: Semiconductor quantum dot (QD) devices have become central to advancements in spin-based quantum computing. However, the increasing complexity of modern QD devices makes calibration and control -- particularly at elevated temperatures -- a bottleneck to progress, highlighting the need for robust and scalable autonomous solutions. A major hurdle arises from trapped charges within the oxide layers,… ▽ More Semiconductor quantum dot (QD) devices have become central to advancements in spin-based quantum computing. However, the increasing complexity of modern QD devices makes calibration and control -- particularly at elevated temperatures -- a bottleneck to progress, highlighting the need for robust and scalable autonomous solutions. A major hurdle arises from trapped charges within the oxide layers, which induce random offset voltage shifts on gate electrodes, with a standard deviation of approximately 83~\si{\milli\volt} of variation within state-of-the-art present-day devices. Efficient characterization and tuning of large arrays of QD qubits depend on choices of automated protocols. Here, we introduce a physically intuitive framework for a bootstrapping, autonomous testing, and initialization system (BATIS) designed to streamline QD device evaluation and calibration. BATIS navigates high-dimensional gate voltage spaces, automating essential steps such as leakage testing, formation of all current channels, and gate characterization in the presence of trapped charges. For forming the current channels, BATIS follows a non-standard approach that requires a single set of measurements regardless of the number of channels. Demonstrated at $1.3$~\si{\kelvin} on a quad-QD Si/Si$_x$Ge$_{1-x}$ device, BATIS eliminates the need for deep cryogenic environments during initial device diagnostics, significantly enhancing scalability and reducing setup times. By requiring only minimal prior knowledge of the device architecture, BATIS represents a platform-agnostic solution, adaptable to various QD systems, which bridges a critical gap in QD autotuning. △ Less

Submitted 14 August, 2025; v1 submitted 10 December, 2024; originally announced December 2024.

Comments: 16 pages, 6 figures, 3 pages of supplemental material

On-chip cryogenic multiplexing of Si/SiGe quantum devices

Authors: M. A. Wolfe, Thomas McJunkin, Daniel R. Ward, DeAnna Campbell, Mark Friesen, M. A. Eriksson

Abstract: The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing; however, on-chip multiplexing circuits have not been shown to have similar benefits for cryogenic quantum devices. In this work we integrate classical circuitry an… ▽ More The challenges of operating qubits in a cryogenic environment point to a looming bottleneck for large-scale quantum processors, limited by the number of input-output connections. Classical processors solve this problem via multiplexing; however, on-chip multiplexing circuits have not been shown to have similar benefits for cryogenic quantum devices. In this work we integrate classical circuitry and Si/SiGe quantum devices on the same chip, providing a test bed for qubit scale-up. Our method uses on-chip field-effect transistors (FETs) to multiplex a grid of work zones, achieving a nearly tenfold reduction in control wiring. We leverage this set-up to probe device properties across a 6x6mm$^2$ array of 16 Hall bars. We successfully operate the array at cryogenic temperatures and high magnetic fields where the quantum Hall effect is observed. Building upon these results, we propose a vision for readout in a large-scale silicon quantum processor with a limited number of control connections. △ Less

Submitted 17 October, 2024; originally announced October 2024.

Single-shot latched readout of a quantum dot qubit using barrier gate pulsing

Authors: Sanghyeok Park, Jared Benson, J. Corrigan, J. P. Dodson, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

Abstract: Latching techniques are widely used to enhance readout of qubits. These methods require precise tuning of multiple tunnel rates, which can be challenging to achieve under realistic experimental conditions, such as when a qubit is coupled to a single reservoir. Here, we present a method for single-shot measurement of a quantum dot qubit with a single reservoir using a latched-readout scheme. Our ap… ▽ More Latching techniques are widely used to enhance readout of qubits. These methods require precise tuning of multiple tunnel rates, which can be challenging to achieve under realistic experimental conditions, such as when a qubit is coupled to a single reservoir. Here, we present a method for single-shot measurement of a quantum dot qubit with a single reservoir using a latched-readout scheme. Our approach involves pulsing a barrier gate to dynamically control qubit-to-reservoir tunnel rates, a method that is readily applicable to the latched readout of various spin-based qubits. We use this method to enable qubit state latching and to reduce the qubit reset time in measurements of coherent Larmor oscillations of a Si/SiGe quantum dot hybrid qubit. △ Less

Submitted 27 August, 2024; originally announced August 2024.

Comments: 6 pages, including supplemental materials

Ultra-dispersive resonator readout of a quantum-dot qubit using longitudinal coupling

Authors: Benjamin Harpt, J. Corrigan, Nathan Holman, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, Rusko Ruskov, Charles Tahan, William D. Oliver, R. McDermott, Mark Friesen, M. A. Eriksson

Abstract: We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics. We perform readout of a quantum-dot hybrid qubit coupled to a superconducting resonator through a parametric, longitudinal interaction mechanism. Our experiments are performed with the qubit and resonator frequencies detuned by $\sim$10 GHz, demonstrating that longitudinal coupling can facilitate semiconductor qubit operation in the 'ultra-dispersive' regime of circuit quantum electrodynamics. △ Less

Submitted 1 January, 2025; v1 submitted 11 July, 2024; originally announced July 2024.

Comments: Main text and Supplementary Information; 13 pages, 7 figures

Journal ref: npj Quantum Information 11, 5 (2025)

Automation of Quantum Dot Measurement Analysis via Explainable Machine Learning

Authors: Daniel Schug, Tyler J. Kovach, M. A. Wolfe, Jared Benson, Sanghyeok Park, J. P. Dodson, J. Corrigan, M. A. Eriksson, Justyna P. Zwolak

Abstract: The rapid development of quantum dot (QD) devices for quantum computing has necessitated more efficient and automated methods for device characterization and tuning. This work demonstrates the feasibility and advantages of applying explainable machine learning techniques to the analysis of quantum dot measurements, paving the way for further advances in automated and transparent QD device tuning.… ▽ More The rapid development of quantum dot (QD) devices for quantum computing has necessitated more efficient and automated methods for device characterization and tuning. This work demonstrates the feasibility and advantages of applying explainable machine learning techniques to the analysis of quantum dot measurements, paving the way for further advances in automated and transparent QD device tuning. Many of the measurements acquired during the tuning process come in the form of images that need to be properly analyzed to guide the subsequent tuning steps. By design, features present in such images capture certain behaviors or states of the measured QD devices. When considered carefully, such features can aid the control and calibration of QD devices. An important example of such images are so-called $\textit{triangle plots}$, which visually represent current flow and reveal characteristics important for QD device calibration. While image-based classification tools, such as convolutional neural networks (CNNs), can be used to verify whether a given measurement is $\textit{good}$ and thus warrants the initiation of the next phase of tuning, they do not provide any insights into how the device should be adjusted in the case of $\textit{bad}$ images. This is because CNNs sacrifice prediction and model intelligibility for high accuracy. To ameliorate this trade-off, a recent study introduced an image vectorization approach that relies on the Gabor wavelet transform (Schug $\textit{et al.}$ 2024 $\textit{Proc. XAI4Sci: Explainable Machine Learning for Sciences Workshop (AAAI 2024) (Vancouver, Canada)}$ pp 1-6). Here we propose an alternative vectorization method that involves mathematical modeling of synthetic triangles to mimic the experimental data. Using explainable boosting machines, we show that this new method offers superior explainability of model prediction without sacrificing accuracy. △ Less

Submitted 13 January, 2025; v1 submitted 21 February, 2024; originally announced February 2024.

Comments: 20 pages, 5 figures, abbreviated version published in Proceedings of the XAI4Sci: Explainable machine learning for sciences workshop at AAAI 2024, (Vancouver, Canada)

Journal ref: Mach. Learn.: Sci. Technol. 6, 015006 (2025)

Data needs and challenges for quantum dot devices automation

Authors: Justyna P. Zwolak, Jacob M. Taylor, Reed W. Andrews, Jared Benson, Garnett W. Bryant, Donovan Buterakos, Anasua Chatterjee, Sankar Das Sarma, Mark A. Eriksson, Eliška Greplová, Michael J. Gullans, Fabian Hader, Tyler J. Kovach, Pranav S. Mundada, Mick Ramsey, Torbjørn Rasmussen, Brandon Severin, Anthony Sigillito, Brennan Undseth, Brian Weber

Abstract: Gate-defined quantum dots are a promising candidate system for realizing scalable, coupled qubit systems and serving as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections that must be accounted for, which hinders the characterization, tuning, and operation process. Moreover, with an increasing number of quantum dot qubits, the rel… ▽ More Gate-defined quantum dots are a promising candidate system for realizing scalable, coupled qubit systems and serving as a fundamental building block for quantum computers. However, present-day quantum dot devices suffer from imperfections that must be accounted for, which hinders the characterization, tuning, and operation process. Moreover, with an increasing number of quantum dot qubits, the relevant parameter space grows sufficiently to make heuristic control infeasible. Thus, it is imperative that reliable and scalable autonomous tuning approaches are developed. This meeting report outlines current challenges in automating quantum dot device tuning and operation with a particular focus on datasets, benchmarking, and standardization. We also present insights and ideas put forward by the quantum dot community on how to overcome them. We aim to provide guidance and inspiration to researchers invested in automation efforts. △ Less

Submitted 5 November, 2024; v1 submitted 21 December, 2023; originally announced December 2023.

Comments: A meeting report from a workshop held at the National Institute of Standards and Technology, Gaithersburg, MD

Journal ref: npj Quantum Inf. 10, 105 (2024)

Control of threshold voltages in Si/SiGe quantum devices via optical illumination

Authors: M. A. Wolfe, Brighton X. Coe, Justin S. Edwards, Tyler J. Kovach, Thomas McJunkin, Benjamin Harpt, D. E. Savage, M. G. Lagally, R. McDermott, Mark Friesen, Shimon Kolkowitz, M. A. Eriksson

Abstract: Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate v… ▽ More Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events. △ Less

Submitted 20 June, 2024; v1 submitted 21 December, 2023; originally announced December 2023.

Comments: 8 pages, 6 figures

Reducing strain fluctuations in quantum dot devices by gate-layer stacking

Authors: Collin C. D. Frink, Benjamin D. Woods, Merritt P. Losert, E. R. MacQuarrie, M. A. Eriksson, Mark Friesen

Abstract: Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattic… ▽ More Nanofabricated metal gate electrodes are commonly used to confine and control electrons in electrostatically defined quantum dots. However, these same gates impart a complicated strain geometry that affects the confinement potential and potentially impairs device functionality. Here we investigate strain-induced fluctuations of the potential energy in Si/SiGe heterostructures, caused by (i) lattice mismatch, (ii) materials-dependent thermal contraction, and (iii) deposition stress in the metal gates. By simulating different gate geometries, ranging from simple to realistically complicated, and including features like overlapping metal and oxide layers, we can explain most observed strain features. In particular, we show that strain-induced potential fluctuations can be suppressed by employing overlapping gates that cover the whole active region, when the oxide layers are thin. These results suggest that strain effects should not present a serious challenge to qubit uniformity when following simple design rules. △ Less

Submitted 6 January, 2024; v1 submitted 14 December, 2023; originally announced December 2023.

Comments: 13 pages, 9 figures

Coupling conduction-band valleys in SiGe heterostructures via shear strain and Ge concentration oscillations

Authors: Benjamin D. Woods, Hudaiba Soomro, E. S. Joseph, Collin C. D. Frink, Robert Joynt, M. A. Eriksson, Mark Friesen

Abstract: Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main ben… ▽ More Engineering conduction-band valley couplings is a key challenge for Si-based spin qubits. Recent work has shown that the most reliable method for enhancing valley couplings entails adding Ge concentration oscillations to the quantum well. However, ultrashort oscillation periods are difficult to grow, while long oscillation periods do not provide useful improvements. Here, we show that the main benefits of short-wavelength oscillations can be achieved in long-wavelength structures through a second-order coupling process involving Brillouin-zone folding induced by shear strain. We finally show that such strain can be achieved through common fabrication techniques, making this an exceptionally promising system for scalable quantum computing. △ Less

Submitted 31 May, 2024; v1 submitted 28 October, 2023; originally announced October 2023.

Comments: 13 pages (5 main text), 5 figures. Published version

Journal ref: npj Quantum Inf 10, 54 (2024)

Practical Strategies for Enhancing the Valley Splitting in Si/SiGe Quantum Wells

Authors: Merritt P. Losert, M. A. Eriksson, Robert Joynt, Rajib Rahman, Giordano Scappucci, Susan N. Coppersmith, Mark Friesen

Abstract: Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we t… ▽ More Silicon/silicon-germanium heterostructures have many important advantages for hosting spin qubits. However, controlling the valley splitting (the energy splitting between the two low-lying conduction-band valleys) remains a critical challenge for ensuring qubit reliability. Broad distributions of valley splittings are commonplace, even among quantum dots formed on the same chip. In this work, we theoretically explore the interplay between quantum-well imperfections that suppress the valley splitting and cause variability, such as broadened interfaces and atomic steps at the interface, while self-consistently accounting for germanium concentration fluctuations. We consider both conventional and unconventional approaches for controlling the valley splitting, and present concrete strategies for implementing them. Our results provide a clear path for achieving qubit uniformity in a scalable silicon quantum computer. △ Less

Submitted 11 January, 2024; v1 submitted 4 March, 2023; originally announced March 2023.

Comments: 35 pages, 22 figures

Journal ref: Phys. Rev. B 108, 125405 (2023)

Longitudinal coupling between a Si/SiGe quantum dot and an off-chip TiN resonator

Authors: J. Corrigan, Benjamin Harpt, Nathan Holman, Rusko Ruskov, Piotr Marciniec, D. Rosenberg, D. Yost, R. Das, William D. Oliver, R. McDermott, Charles Tahan, Mark Friesen, M. A. Eriksson

Abstract: Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled… ▽ More Superconducting cavities have emerged as a key tool for measuring the spin states of quantum dots. So far however, few experiments have explored longitudinal couplings between dots and cavities, and no solid-state qubit experiments have explicitly probed the "adiabatic" regime, where the Purcell decay is strongly suppressed. Here, we report measurements of a double-quantum-dot charge qubit coupled to a high-impedance resonator via a "flip-chip" design geometry. By applying an adiabatic ac drive to the qubit through two different channels, and studying the effects of qubit energy detuning, interdot tunneling, and driving strength, we are able to unequivocally confirm the presence of a longitudinal coupling between the qubit and cavity, while the qubit remains in its ground state. Since this coupling is proportional to the driving amplitude, and is therefore switchable, it has the potential to become a powerful new tool in qubit experiments. △ Less

Submitted 14 September, 2023; v1 submitted 5 December, 2022; originally announced December 2022.

Comments: Main text and Supplementary Materials, 16 pages, 10 figures

Journal ref: Physical Review Applied 20, 064005 (2023)

Latched readout for the quantum dot hybrid qubit

Authors: J. Corrigan, J. P. Dodson, Brandur Thorgrimsson, Samuel F. Neyens, T. J. Knapp, Thomas McJunkin, S. N. Coppersmith, M. A. Eriksson

Abstract: A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a m… ▽ More A primary method of reading out a quantum dot hybrid qubit involves projection of the logical basis onto distinct charge states that are readily detected by an integrated charge sensing dot. However, in the simplest configuration, the excited charge state decays rapidly, making single-shot readout challenging. Here, we demonstrate a readout procedure where the qubit excited state is latched to a metastable charge configuration whose lifetime is tunnel rate limited, persisting here as long as 2.5 ms. Additionally, we show that working in the (4,1)-(3,2) charge configuration enables a latched readout window that is larger and more tunable than typical charge configurations, because the size of the readout window is determined by an orbital splitting rather than a valley splitting. △ Less

Submitted 15 October, 2022; originally announced October 2022.

Spin-orbit enhancement in Si/SiGe heterostructures with oscillating Ge concentration

Authors: Benjamin D. Woods, M. A. Eriksson, Robert Joynt, Mark Friesen

Abstract: We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coup… ▽ More We show that Ge concentration oscillations within the quantum well region of a Si/SiGe heterostructure can significantly enhance the spin-orbit coupling of the low-energy conduction-band valleys. Specifically, we find that for Ge oscillation wavelengths near $λ= 1.57~\text{nm}$ with an average Ge concentration of $\bar{n}_{\text{Ge}} = 5\%$ in the quantum well region, a Dresselhaus spin-orbit coupling is induced, at all physically relevant electric field strengths, which is over an order of magnitude larger than what is found in conventional Si/SiGe heterostructures without Ge concentration oscillations. This enhancement is caused by the Ge concentration oscillations producing wave-function satellite peaks a distance $2 π/λ$ away in momentum space from each valley, which then couple to the opposite valley through Dresselhaus spin-orbit coupling. Our results indicate that the enhanced spin-orbit coupling can enable fast spin manipulation within Si quantum dots using electric dipole spin resonance in the absence of micromagnets. Indeed, our calculations yield a Rabi frequency $Ω_{\text{Rabi}}/B > 500~\text{MHz/T}$ near the optimal Ge oscillation wavelength $λ= 1.57~\text{nm}$. △ Less

Submitted 16 January, 2023; v1 submitted 4 October, 2022; originally announced October 2022.

Comments: 19 pages, 11 figures

Journal ref: Phys. Rev. B 107, 035418 (2023)

SiGe quantum wells with oscillating Ge concentrations for quantum dot qubits

Authors: Thomas McJunkin, Benjamin Harpt, Yi Feng, Merritt P. Losert, Rajib Rahman, J. P. Dodson, M. A. Wolfe, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Robert Joynt, M. A. Eriksson

Abstract: Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new hete… ▽ More Large-scale arrays of quantum-dot spin qubits in Si/SiGe quantum wells require large or tunable energy splittings of the valley states associated with degenerate conduction band minima. Existing proposals to deterministically enhance the valley splitting rely on sharp interfaces or modifications in the quantum well barriers that can be difficult to grow. Here, we propose and demonstrate a new heterostructure, the "Wiggle Well," whose key feature is Ge concentration oscillations inside the quantum well. Experimentally, we show that placing Ge in the quantum well does not significantly impact our ability to form and manipulate single-electron quantum dots. We further observe large and widely tunable valley splittings, from 54 to 239 ueV. Tight-binding calculations, and the tunability of the valley splitting, indicate that these results can mainly be attributed to random concentration fluctuations that are amplified by the presence of Ge alloy in the heterostructure, as opposed to a deterministic enhancement due to the concentration oscillations. Quantitative predictions for several other heterostructures point to the Wiggle Well as a robust method for reliably enhancing the valley splitting in future qubit devices. △ Less

Submitted 15 December, 2022; v1 submitted 17 December, 2021; originally announced December 2021.

Comments: Main text and supplemental information, 11 pages, 7 figures

Journal ref: Nature Communications 13, 7777 (2022)

A Simple Numerical Method for Evaluating Heat Dissipation from Curved Wires with Periodic Applied Heating

Authors: Gabriel R. Jaffe, Victor W. Brar, Max G. Lagally, Mark A. Eriksson

Abstract: In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent expe… ▽ More In many situations, the dual-purpose heater/thermometer wires used in the three-omega method, one of the most precise and sensitive techniques for measuring the thermal conductivity of thin films and interfaces, must include bends and curves to avoid obstructions on the surface of a sample. Although the three-omega analysis assumes that the heating wire is infinitely long and straight, recent experimental work has demonstrated that in some cases curved-wire geometries can be used without introducing detectable systematic error. We describe a general numerical method that can be used to calculate the temperature of three-omega heating wires with arbitrary wire geometries. This method provides experimentalists with a simple quantitative procedure for calculating how large the systematic error caused by a particular wire asymmetry will be. We show calculations of two useful cases: a straight wire with a single bend of arbitrary angle and a wire that forms a circle. We find that the amplitude of the in-phase temperature oscillations near a wire that forms a circle differs from the prediction using the analytic straight-line source solution by $<$12%, provided that the thermal penetration depth is less than ten times the radius of curvature of the wire path. The in-phase temperature amplitude 1.5 wire widths away from a 90$^{\circ}$ bend in a wire is within 11% of the straight-line source prediction for all penetration depths greater than the wire width. Our calculations indicate that the straight-line source solution breaks down significantly when the wire bend angle is less than 45$^{\circ}$. △ Less

Submitted 8 October, 2021; originally announced October 2021.

Comments: 4 pages, 4 figures

Valley splittings in Si/SiGe quantum dots with a germanium spike in the silicon well

Authors: Thomas McJunkin, E. R. MacQuarrie, Leah Tom, S. F. Neyens, J. P. Dodson, Brandur Thorgrimsson, J. Corrigan, H. Ekmel Ercan, D. E. Savage, M. G. Lagally, Robert Joynt, S. N. Coppersmith, Mark Friesen, M. A. Eriksson

Abstract: Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure i… ▽ More Silicon-germanium heterostructures have successfully hosted quantum dot qubits, but the intrinsic near-degeneracy of the two lowest valley states poses an obstacle to high fidelity quantum computing. We present a modification to the Si/SiGe heterostructure by the inclusion of a spike in germanium concentration within the quantum well in order to increase the valley splitting. The heterostructure is grown by chemical vapor deposition and magnetospectroscopy is performed on gate-defined quantum dots to measure the excited state spectrum. We demonstrate a large and widely tunable valley splitting as a function of applied vertical electric field and lateral dot confinement. We further investigate the role of the germanium spike by means of tight-binding simulations in single-electron dots and show a robust doubling of the valley splitting when the spike is present, as compared to a standard (spike-free) heterostructure. This doubling effect is nearly independent of the electric field, germanium content of the spike, and spike location. This experimental evidence of a stable, tunable quantum dot, despite a drastic change to the heterostructure, provides a foundation for future heterostructure modifications. △ Less

Submitted 16 April, 2021; originally announced April 2021.

Comments: 11 pages, 7 figures

Journal ref: Phys. Rev. B 104, 085406 (2021)

How valley-orbit states in silicon quantum dots probe quantum well interfaces

Authors: J. P. Dodson, H. Ekmel Ercan, J. Corrigan, Merritt Losert, Nathan Holman, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration int… ▽ More The energies of valley-orbit states in silicon quantum dots are determined by an as yet poorly understood interplay between interface roughness, orbital confinement, and electron interactions. Here, we report measurements of one- and two-electron valley-orbit state energies as the dot potential is modified by changing gate voltages, and we calculate these same energies using full configuration interaction calculations. The results enable an understanding of the interplay between the physical contributions and enable a new probe of the quantum well interface. △ Less

Submitted 6 April, 2022; v1 submitted 26 March, 2021; originally announced March 2021.

Comments: 9 pages, 5 figures

Journal ref: Physical Review Letters (Vol. 128, Issue 14), (2022)

Long Phonon Mean Free Paths Observed in Cross-plane Thermal-Conductivity Measurements of Exfoliated Hexagonal Boron Nitride

Authors: Gabriel R. Jaffe, Keenan J. Smith, Kenji Watanabe, Takashi Taniguchi, Max G. Lagally, Mark A. Eriksson, Victor W. Brar

Abstract: Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon… ▽ More Sub-micron-thick layers of hexagonal boron nitride (hBN) exhibit high in-plane thermal conductivity, useful optical properties, and serve as dielectric encapsulation layers with low electrostatic inhomogeneity for graphene devices. Despite the promising applications of hBN as a heat spreader, the thickness dependence of the cross-plane thermal conductivity is not known, and the cross-plane phonon mean free paths in hBN have not been measured. We measure the cross-plane thermal conductivity of hBN flakes exfoliated from bulk crystals. We find that the thermal conductivity is extremely sensitive to film thickness. We measure a forty-fold increase in the cross-plane thermal conductivity between 7 nm and 585 nm flakes at 295 K. We attribute the large increase in thermal conductivity with increasing thickness to contributions from phonons with long mean free paths (MFPs), spanning many hundreds of nanometers in the thickest flakes. When planar twist interfaces are introduced into the crystal by mechanically stacking multiple thin flakes, the cross-plane thermal conductivity of the stack is found to be a factor of seven below that of individual flakes with similar total thickness, thus providing strong evidence that phonon scattering at twist boundaries limits the maximum phonon MFPs. These results have important implications for hBN integration in nanoelectronics and improve our understanding of thermal transport in two-dimensional materials. △ Less

Submitted 8 October, 2021; v1 submitted 12 March, 2021; originally announced March 2021.

Comments: 4 pages, 3 figures

Journal ref: ACS Appl. Mater. Interfaces 2023, 15, 9, 12545-12550

Magnetic gradient free two axis control of a valley spin qubit in SiGe

Authors: Y. -Y. Liu, L. A. Orona, Samuel F. Neyens, E. R. MacQuarrie, M. A. Eriksson, A. Yacoby

Abstract: Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that valley states can serve as an asset that enables two-axis control of a singlet-triplet qubit formed in a double quantum dot without the application of a magnetic fie… ▽ More Spins in SiGe quantum dots are promising candidates for quantum bits but are also challenging due to the valley degeneracy which could potentially cause spin decoherence and weak spin-orbital coupling. In this work we demonstrate that valley states can serve as an asset that enables two-axis control of a singlet-triplet qubit formed in a double quantum dot without the application of a magnetic field gradient. We measure the valley spectrum in each dot using magnetic field spectroscopy of Zeeman split triplet states. The interdot transition between ground states requires an electron to flip between valleys, which in turn provides a g-factor difference $Δg$ between two dots. This $Δg$ serves as an effective magnetic field gradient and allows for qubit rotations with a rate that increases linearly with an external magnetic field. We measured several interdot transitions and found that this valley introduced $Δg$ is universal and electrically tunable. This could potentially simplify scaling up quantum information processing in the SiGe platform by removing the requirement for magnetic field gradients which are difficult to engineer. △ Less

Submitted 24 January, 2021; originally announced January 2021.

Comments: 4 figures

Journal ref: Phys. Rev. Applied 16, 024029 (2021)

Radio frequency reflectometry in silicon-based quantum dots

Authors: Y. -Y. Liu, S. G. J. Philips, L. A. Orona, N. Samkharadze, T. McJunkin, E. R. MacQuarrie, M. A. Eriksson, L. M. K. Vandersypen, A. Yacoby

Abstract: RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a se… ▽ More RF reflectometry offers a fast and sensitive method for charge sensing and spin readout in gated quantum dots. We focus in this work on the implementation of RF readout in accumulation-mode gate-defined quantum dots, where the large parasitic capacitance poses a challenge. We describe and test two methods for mitigating the effect of the parasitic capacitance, one by on-chip modifications and a second by off-chip changes. We demonstrate that these methods enable high-performance charge readout in Si/SiGe quantum dots, achieving a fidelity of 99.9% for a measurement time of 1 $μ$s. △ Less

Submitted 6 January, 2021; v1 submitted 28 December, 2020; originally announced December 2020.

Comments: 6 pages, 4 figures

Journal ref: Phys. Rev. Applied 16, 014057 (2021)

Dispersive measurement of a semiconductor double quantum dot via 3D integration of a high-impedance TiN resonator

Authors: Nathan Holman, D. Rosenberg, D. Yost, J. L. Yoder, R. Das, William D. Oliver, R. McDermott, M. A. Eriksson

Abstract: Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing… ▽ More Spins in semiconductor quantum dots are a candidate for cryogenic quantum processors due to their exceptionally long coherence times. One major challenge to scaling quantum dot spin qubits is the dense wiring requirements, making it difficult to envision fabricating large arrays of nearest-neighbor-coupled qubits necessary for error correction. We describe a method to solve this problem by spacing the qubits out using high-impedance superconducting resonators with a 2D grid unit cell area of $0.16~\text{mm}^2$ using 3D integration. To prove the viability of this approach, we demonstrate 3D integration of a high-impedance TiN resonator coupled to a double quantum dot in a Si/SiGe heterostructure. Using the resonator as a dispersive gate sensor, we tune the device down to the single electron regime with an SNR = 5.36 limited by the resonator-dot capacitance. Characterization of the dot and resonator systems shows such integration can be done while maintaining low charge noise metrics for the quantum dots and with improved loaded quality factors for the superconducting resonator ($Q_L = 2.14 \times 10^4$), allowing for high-sensitivity charge detection and the potential for high fidelity 2-qubit gates. This work paves the way for 2D quantum dot qubit arrays with cavity mediated interactions. △ Less

Submitted 17 November, 2020; originally announced November 2020.

Comments: 12 pages, 7 figures

Coherent control and spectroscopy of a semiconductor quantum dot Wigner molecule

Authors: J. Corrigan, J. P. Dodson, H. Ekmel Ercan, J. C. Abadillo-Uriel, Brandur Thorgrimsson, T. J. Knapp, Nathan Holman, Thomas McJunkin, Samuel F. Neyens, E. R. MacQuarrie, Ryan H. Foote, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum do… ▽ More Multi-electron semiconductor quantum dots have found wide application in qubits, where they enable readout and enhance polarizability. However, coherent control in such dots has typically been restricted to only the lowest two levels, and such control in the strongly interacting regime has not been realized. Here we report quantum control of eight different resonances in a silicon-based quantum dot. We use qubit readout to perform spectroscopy, revealing a dense set of energy levels with characteristic spacing far smaller than the single-particle energy. By comparing with full configuration interaction calculations, we argue that the dense set of levels arises from Wigner-molecule physics. △ Less

Submitted 28 September, 2020; originally announced September 2020.

Journal ref: Phys. Rev. Lett. 127, 127701 (2021)

Microwave Engineering for Semiconductor Quantum Dots in a cQED Architecture

Authors: Nathan Holman, J. P. Dodson, L. F. Edge, S. N. Coppersmith, M. Friesen, R. McDermott, M. A. Eriksson

Abstract: We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the chara… ▽ More We develop an engineered microwave environment for coupling high Q superconducting resonators to quantum dots using a multilayer fabrication stack for the dot control wiring. Analytic and numerical models are presented to understand how parasitic capacitive coupling to the dot bias leads can result in microwave energy leakage and low resonator quality factors. We show that by controlling the characteristic impedance of the dot bias wiring, on-chip quality factors of 8140 can be attained without the addition of explicit filtering. Using this approach we demonstrate single electron occupation in double and triple dots detected via dipole or quadrupole coupling to a superconducting resonator. Additionally, by using multilayer fabrication we are able to improve ground plane integrity and keep microwave crosstalk below -20 dB out to 18 GHz while maintaining high wire density which will be necessary for future circuit quantum electrodyanmics (cQED) quantum dot processors. △ Less

Submitted 3 June, 2020; originally announced June 2020.

Comments: 5 pages, 3 figures

Three-Omega Thermal-Conductivity Measurements with Curved Heater Geometries

Authors: Gabriel R. Jaffe, Keenan J. Smith, Victor W. Brar, Max G. Lagally, Mark A. Eriksson

Abstract: The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the req… ▽ More The three-omega method, a powerful technique to measure the thermal conductivity of nanometer-thick films and the interfaces between them, has historically employed straight conductive wires to act as both heaters and thermometers. When investigating stochastically prepared samples such as two-dimensional materials and nanomembranes, residue and excess material can make it difficult to fit the required millimeter-long straight wire on the sample surface. There are currently no available criteria for how diverting three-omega heater wires around obstacles affects the validity of the thermal measurement. In this Letter, we quantify the effect of wire curvature by performing three-omega experiments with a wide range of frequencies using both curved and straight heater geometries on SiO$_2$/Si samples. When the heating wire is curved, we find that the measured Si substrate thermal conductivity changes by only 0.2%. Similarly, we find that wire curvature has no significant effect on the determination of the thermal resistance of a $\sim$65 nm SiO$_2$ layer, even for the sharpest corners considered here, for which the largest measured ratio of the thermal penetration depth of the applied thermal wave to radius of curvature of the heating wire is 4.3. This result provides useful design criteria for three-omega experiments by setting a lower bound for the maximum ratio of thermal penetration depth to wire radius of curvature. △ Less

Submitted 4 May, 2020; originally announced May 2020.

Comments: 4 pages, 3 figures

Journal ref: Appl. Phys. Lett. 117, 073102 (2020)

Fabrication process and failure analysis for robust quantum dots in silicon

Authors: J. P. Dodson, Nathan Holman, Brandur Thorgrimsson, Samuel F. Neyens, E. R. MacQuarrie, Thomas McJunkin, Ryan H. Foote, L. F. Edge, S. N. Coppersmith, M. A. Eriksson

Abstract: We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetti… ▽ More We present an improved fabrication process for overlapping aluminum gate quantum dot devices on Si/SiGe heterostructures that incorporates low-temperature inter-gate oxidation, thermal annealing of gate oxide, on-chip electrostatic discharge (ESD) protection, and an optimized interconnect process for thermal budget considerations. This process reduces gate-to-gate leakage, damage from ESD, dewetting of aluminum, and formation of undesired alloys in device interconnects. Additionally, cross-sectional scanning transmission electron microscopy (STEM) images elucidate gate electrode morphology in the active region as device geometry is varied. We show that overlapping aluminum gate layers homogeneously conform to the topology beneath them, independent of gate geometry, and identify critical dimensions in the gate geometry where pattern transfer becomes non-ideal, causing device failure. △ Less

Submitted 15 September, 2020; v1 submitted 12 April, 2020; originally announced April 2020.

Comments: 5 figures, 9 pages

Progress Towards a Capacitively Mediated CNOT Between Two Charge Qubits in Si/SiGe

Authors: E. R. MacQuarrie, Samuel F. Neyens, J. P. Dodson, J. Corrigan, Brandur Thorgrimsson, Nathan Holman, M. Palma, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously dr… ▽ More Fast operations, an easily tunable Hamiltonian, and a straightforward two-qubit interaction make charge qubits a useful tool for benchmarking device performance and exploring two-qubit dynamics. Here, we tune a linear chain of four Si/SiGe quantum dots to host two double dot charge qubits. Using the capacitance between the double dots to mediate a strong two-qubit interaction, we simultaneously drive coherent transitions to generate correlations between the qubits. We then sequentially pulse the qubits to drive one qubit conditionally on the state of the other. We find that a conditional $π$-rotation can be driven in just 74 ps with a modest fidelity demonstrating the possibility of two-qubit operations with a 13.5 GHz clockspeed. △ Less

Submitted 15 March, 2020; originally announced March 2020.

Comments: Main text plus supplemental information, 24 pages, 13 figures total)

Quantum Simulators: Architectures and Opportunities

Authors: Ehud Altman, Kenneth R. Brown, Giuseppe Carleo, Lincoln D. Carr, Eugene Demler, Cheng Chin, Brian DeMarco, Sophia E. Economou, Mark A. Eriksson, Kai-Mei C. Fu, Markus Greiner, Kaden R. A. Hazzard, Randall G. Hulet, Alicia J. Kollar, Benjamin L. Lev, Mikhail D. Lukin, Ruichao Ma, Xiao Mi, Shashank Misra, Christopher Monroe, Kater Murch, Zaira Nazario, Kang-Kuen Ni, Andrew C. Potter, Pedram Roushan , et al. (12 additional authors not shown)

Abstract: Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operati… ▽ More Quantum simulators are a promising technology on the spectrum of quantum devices from specialized quantum experiments to universal quantum computers. These quantum devices utilize entanglement and many-particle behaviors to explore and solve hard scientific, engineering, and computational problems. Rapid development over the last two decades has produced more than 300 quantum simulators in operation worldwide using a wide variety of experimental platforms. Recent advances in several physical architectures promise a golden age of quantum simulators ranging from highly optimized special purpose simulators to flexible programmable devices. These developments have enabled a convergence of ideas drawn from fundamental physics, computer science, and device engineering. They have strong potential to address problems of societal importance, ranging from understanding vital chemical processes, to enabling the design of new materials with enhanced performance, to solving complex computational problems. It is the position of the community, as represented by participants of the NSF workshop on "Programmable Quantum Simulators," that investment in a national quantum simulator program is a high priority in order to accelerate the progress in this field and to result in the first practical applications of quantum machines. Such a program should address two areas of emphasis: (1) support for creating quantum simulator prototypes usable by the broader scientific community, complementary to the present universal quantum computer effort in industry; and (2) support for fundamental research carried out by a blend of multi-investigator, multi-disciplinary collaborations with resources for quantum simulator software, hardware, and education. △ Less

Submitted 20 December, 2019; v1 submitted 14 December, 2019; originally announced December 2019.

Comments: 41 pages -- references and acknowledgments added in v2

Journal ref: PRX Quantum 2, 017003 (2021)

Repetitive quantum non-demolition measurement and soft decoding of a silicon spin qubit

Authors: Xiao Xue, Benjamin D'Anjou, Thomas F. Watson, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, William A. Coish, Lieven M. K. Vandersypen

Abstract: Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logica… ▽ More Quantum error correction is of crucial importance for fault-tolerant quantum computers. As an essential step towards the implementation of quantum error-correcting codes, quantum non-demolition (QND) measurements are needed to efficiently detect the state of a logical qubit without destroying it. Here we implement QND measurements in a Si/SiGe two-qubit system, with one qubit serving as the logical qubit and the other serving as the ancilla. Making use of a two-qubit controlled-rotation gate, the state of the logical qubit is mapped onto the ancilla, followed by a destructive readout of the ancilla. Repeating this procedure enhances the logical readout fidelity from $75.5\pm 0.3\%$ to $94.5 \pm 0.2\%$ after 15 ancilla readouts. In addition, we compare the conventional thresholding method with an improved signal processing method called soft decoding that makes use of analog information in the readout signal to better estimate the state of the logical qubit. We demonstrate that soft decoding leads to a significant reduction in the required number of repetitions when the readout errors become limited by Gaussian noise, for instance in the case of readouts with a low signal-to-noise ratio. These results pave the way for the implementation of quantum error correction with spin qubits in silicon. △ Less

Submitted 19 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. X 10, 021006 (2020)

The effect of external electric fields on silicon with superconducting gallium nano-precipitates

Authors: Brandur Thorgrimsson, Thomas McJunkin, E. R. MacQuarrie, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding bot… ▽ More Motivated by potential transformative applications of nanoelectronic circuits that incorporate superconducting elements, and by the advantages of integrating these elements in a silicon materials platform, we investigate the properties of the superconductivity of silicon ion-implanted with gallium. Here we measure 40 different samples and explore both a variety of preparation methods (yielding both superconducting and non-superconducting samples), and the reproducibility of one of the preparation methods yielding superconducting samples. While we find agreement with the existing literature that superconducting effects are visible in this system, we also find that this superconductivity is not influenced by voltages applied to a top gate. The superconductivity in this materials system is not gateable for applied electric fields as large as 8 MV/cm. We also present results of scanning transmission electron microscopy imaging of some of the same samples for which we report electronic characterization. In agreement with the existing literature, we find that the presence of Ga precipitates is essential to the presence of a superconducting transition in these samples. However, we also find evidence for large inhomogeneities in this system, which we discuss in connection with the lack of gateability we report here. △ Less

Submitted 12 June, 2020; v1 submitted 15 November, 2019; originally announced November 2019.

Comments: 22 pages, 6 figures

Journal ref: J. Appl. Phys. 127, 215102 (2020)

Majorana bound states in nanowire-superconductor hybrid systems in periodic magnetic fields

Authors: Viktoriia Kornich, Maxim G. Vavilov, Mark Friesen, M. A. Eriksson, S. N. Coppersmith

Abstract: We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In par… ▽ More We study how the shape of a periodic magnetic field affects the presence of Majorana bound states (MBS) in a nanowire-superconductor system. Motivated by the field configurations that can be produced by an array of nanomagnets, we consider spiral fields with an elliptic cross-section and fields with two sinusoidal components. We show that MBS are robust to imperfect helical magnetic fields. In particular, if the amplitude of one component is tuned to the value determined by the superconducting order parameter in the wire, the MBS can exist even if the second component has a much smaller amplitude. We also explore the effect of the chemical potential on the phase diagram. Our analysis is both numerical and analytical, with good agreement between the two methods. △ Less

Submitted 15 November, 2019; originally announced November 2019.

Journal ref: Phys. Rev. B 101, 125414 (2020)

Measurements of capacitive coupling within a quadruple quantum dot array

Authors: Samuel F. Neyens, E. R. MacQuarrie, J. P. Dodson, J. Corrigan, Nathan Holman, Brandur Thorgrimsson, M. Palma, Thomas McJunkin, L. F. Edge, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract… ▽ More We present measurements of the capacitive coupling energy and the inter-dot capacitances in a linear quadruple quantum dot array in undoped Si/SiGe. With the device tuned to a regime of strong ($>$1 GHz) intra-double dot tunnel coupling, as is typical for double dot qubits, we measure a capacitive coupling energy of $20.9 \pm 0.3$ GHz. In this regime, we demonstrate a fitting procedure to extract all the parameters in the 4D Hamiltonian for two capacitively coupled charge qubits from a 2D slice through the quadruple dot charge stability diagram. We also investigate the tunability of the capacitive coupling energy, using inter-dot barrier gate voltages to tune the inter- and intra-double dot capacitances, and change the capacitive coupling energy of the double dots over a range of 15-32 GHz. We provide a model for the capacitive coupling energy based on the electrostatics of a network of charge nodes joined by capacitors, which shows how the coupling energy should depend on inter-double dot and intra-double dot capacitances in the network, and find that the expected trends agree well with the measurements of coupling energy. △ Less

Submitted 18 July, 2019; originally announced July 2019.

Comments: 6 pages + supplementary information, 4 figures

Journal ref: Phys. Rev. Applied 12, 064049 (2019)

Spatial Noise Correlations in a Si/SiGe Two-Qubit Device from Bell State Coherences

Authors: Jelmer M. Boter, Xiao Xue, Tobias S. Krähenmann, Thomas F. Watson, Vickram N. Premakumar, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Robert Joynt, Lieven M. K. Vandersypen

Abstract: We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting… ▽ More We study spatial noise correlations in a Si/SiGe two-qubit device with integrated micromagnets. Our method relies on the concept of decoherence-free subspaces, whereby we measure the coherence time for two different Bell states, designed to be sensitive only to either correlated or anti-correlated noise respectively. From these measurements, we find weak correlations in low-frequency noise acting on the two qubits, while no correlations could be detected in high-frequency noise. A theoretical model and numerical simulations give further insight into the additive effect of multiple independent (anti-)correlated noise sources with an asymmetric effect on the two qubits. Such a scenario is plausible given the data and our understanding of the physics of this system. This work is highly relevant for the design of optimized quantum error correction codes for spin qubits in quantum dot arrays, as well as for optimizing the design of future quantum dot arrays. △ Less

Submitted 6 June, 2019; originally announced June 2019.

Comments: 6+6 pages, 4+3 figures

Journal ref: Phys. Rev. B 101, 235133 (2020)

Enhancing the dipolar coupling of a $S$-$T_0$ qubit with a transverse sweet spot

Authors: J. C. Abadillo-Uriel, M. A. Eriksson, S. N. Coppersmith, M. Friesen

Abstract: A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where… ▽ More A fundamental design challenge for quantum dot spin qubits is to extend the strength and range of qubit interactions while suppressing their coupling to the environment, since both effects have electrical origins. Key tools include the ability to retune the qubits, to take advantage of physical resources in different operating regimes, and to access optimal working points, or "sweet spots," where dephasing is minimized. Here, we explore an important, new resource for singlet-triplet qubits: a transverse sweet spot (TSS) that enables (i) direct transitions between qubit states, (ii) a strong, charge-like qubit coupling, and (iii) leading-order protection from electrical fluctuations. Of particular interest is the possibility of transitioning between the TSS and symmetric operating points while remaining continuously protected. This arrangement is ideal for coupling qubits to a microwave cavity, because it combines maximal tunability of the coupling strength with leading-order noise suppression. We perform simulations with $1/f$-type electrical noise, demonstrating that two-qubit gates mediated by a resonator can achieve fidelities $>99$\% under realistic conditions. These results greatly expand the toolbox for singlet-triplet qubits. △ Less

Submitted 16 May, 2019; v1 submitted 15 May, 2019; originally announced May 2019.

Comments: 9 pages + 4 pages of SI

Journal ref: Nature Communications 10, 5641 (2019)

Benchmarking Gate Fidelities in a Si/SiGe Two-Qubit Device

Authors: X. Xue, T. F. Watson, J. Helsen, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, M. A. Eriksson, S. Wehner, L. M. K. Vandersypen

Abstract: We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity i… ▽ More We report the first complete characterization of single-qubit and two-qubit gate fidelities in silicon-based spin qubits, including cross-talk and error correlations between the two qubits. To do so, we use a combination of standard randomized benchmarking and a recently introduced method called character randomized benchmarking, which allows for more reliable estimates of the two-qubit fidelity in this system. Interestingly, with character randomized benchmarking, the two-qubit CPhase gate fidelity can be obtained by studying the additional decay induced by interleaving the CPhase gate in a reference sequence of single-qubit gates only. This work sets the stage for further improvements in all the relevant gate fidelities in silicon spin qubits beyond the error threshold for fault-tolerant quantum computation. △ Less

Submitted 9 November, 2018; originally announced November 2018.

Comments: 6+5 pages, 6 figures

Journal ref: Phys. Rev. X 9, 021011 (2019)

Compressed Optimization of Device Architectures (CODA) for semiconductor quantum devices

Authors: Adam Frees, John King Gamble, Daniel R. Ward, Robin Blume-Kohout, M. A. Eriksson, Mark Friesen, S. N. Coppersmith

Abstract: Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device… ▽ More Recent advances in nanotechnology have enabled researchers to manipulate small collections of quantum mechanical objects with unprecedented accuracy. In semiconductor quantum dot qubits, this manipulation requires controlling the dot orbital energies, tunnel couplings, and the electron occupations. These properties all depend on the voltages placed on the metallic electrodes that define the device, whose positions are fixed once the device is fabricated. While there has been much success with small numbers of dots, as the number of dots grows, it will be increasingly useful to control these systems with as few electrode voltage changes as possible. Here, we introduce a protocol, which we call the Compressed Optimization of Device Architectures (CODA), in order to both efficiently identify sparse sets of voltage changes that control quantum systems, and to introduce a metric which can be used to compare device designs. As an example of the former, we apply this method to simulated devices with up to 100 quantum dots and show that CODA automatically tunes devices more efficiently than other common nonlinear optimizers. To demonstrate the latter, we determine the optimal lateral scale for a triple quantum dot, yielding a simulated device that can be tuned with small voltage changes on a limited number of electrodes. △ Less

Submitted 13 January, 2019; v1 submitted 12 June, 2018; originally announced June 2018.

Comments: 10 pages, 4 figures

Journal ref: Phys. Rev. Applied 11, 024063 (2019)

Signatures of atomic-scale structure in the energy dispersion and coherence of a Si quantum-dot qubit

Authors: J. C. Abadillo-Uriel, Brandur Thorgrimsson, Dohun Kim, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, M. J. Calderón, S. N. Coppersmith, M. A. Eriksson, Mark Friesen

Abstract: We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the… ▽ More We report anomalous behavior in the energy dispersion of a three-electron double-quantum-dot hybrid qubit and argue that it is caused by atomic-scale disorder at the quantum-well interface. By employing tight-binding simulations, we identify potential disorder profiles that induce behavior consistent with the experiments. The results indicate that disorder can give rise to "sweet spots" where the decoherence caused by charge noise is suppressed, even in a parameter regime where true sweet spots are unexpected. Conversely, "hot spots" where the decoherence is enhanced can also occur. Our results suggest that, under appropriate conditions, interfacial atomic structure can be used as a tool to enhance the fidelity of Si double-dot qubits. △ Less

Submitted 25 May, 2018; originally announced May 2018.

Comments: 7 pages

Journal ref: Phys. Rev. B 98, 165438 (2018)

The critical role of substrate disorder in valley splitting in Si quantum wells

Authors: Samuel F. Neyens, Ryan H. Foote, Brandur Thorgrimsson, T. J. Knapp, Thomas McJunkin, L. M. K. Vandersypen, Payam Amin, Nicole K. Thomas, James S. Clarke, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum we… ▽ More Motivated by theoretical predictions that spatially complex concentration modulations of Si and Ge can increase the valley splitting in quantum wells, we grow and characterize Si/SiGe heterostructures with a thin, pure Ge layer at the top of the quantum well using chemical vapor deposition. We show that these heterostructures remain hosts for high-mobility electron gases. We measure two quantum wells with approximately five monolayers of pure Ge at the upper barrier, finding mobilities as high as 70,000 cm$^2$/Vs, compared to 100,000 cm$^2$/Vs measured in samples with no Ge layer. Activation energy measurements in quantum Hall states corresponding to Fermi levels in the gap between different valley states reveal energy gaps ranging from 30 to over 200 $μ$eV, and we extract a surprisingly strong dependence of the energy gap on electron density. We interpret our results using tight binding theory and argue that our results are evidence that atomic scale disorder at the quantum well interface dominates the behavior of the valley splittings of these modified heterostructures. △ Less

Submitted 15 June, 2018; v1 submitted 5 April, 2018; originally announced April 2018.

Comments: 7 pages

Journal ref: Applied Physics Letters 112, 243107 (2018)

A programmable two-qubit quantum processor in silicon

Authors: T. F. Watson, S. G. J. Philips, E. Kawakami, D. R. Ward, P. Scarlino, M. Veldhorst, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration… ▽ More With qubit measurement and control fidelities above the threshold of fault-tolerance, much attention is moving towards the daunting task of scaling up the number of physical qubits to the large numbers needed for fault tolerant quantum computing. Here, quantum dot based spin qubits may offer significant advantages due to their potential for high densities, all-electrical operation, and integration onto an industrial platform. In this system, the initialisation, readout, single- and two-qubit gates have been demonstrated in various qubit representations. However, as seen with other small scale quantum computer demonstrations, combining these elements leads to new challenges involving qubit crosstalk, state leakage, calibration, and control hardware which provide invaluable insight towards scaling up. Here we address these challenges and demonstrate a programmable two-qubit quantum processor in silicon by performing both the Deutsch-Josza and the Grover search algorithms. In addition, we characterise the entanglement in our processor through quantum state tomography of Bell states measuring state fidelities between 85-89% and concurrences between 73-80%. These results pave the way for larger scale quantum computers using spins confined to quantum dots. △ Less

Submitted 31 May, 2018; v1 submitted 14 August, 2017; originally announced August 2017.

Valley dependent anisotropic spin splitting in silicon quantum dots

Authors: Rifat Ferdous, Erika Kawakami, Pasquale Scarlino, Michał P. Nowak, D. R. Ward, D. E. Savage, M. G. Lagally, S. N. Coppersmith, Mark Friesen, Mark A. Eriksson, Lieven M. K. Vandersypen, Rajib Rahman

Abstract: Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically… ▽ More Spin qubits hosted in silicon (Si) quantum dots (QD) are attractive due to their exceptionally long coherence times and compatibility with the silicon transistor platform. To achieve electrical control of spins for qubit scalability, recent experiments have utilized gradient magnetic fields from integrated micro-magnets to produce an extrinsic coupling between spin and charge, thereby electrically driving electron spin resonance (ESR). However, spins in silicon QDs experience a complex interplay between spin, charge, and valley degrees of freedom, influenced by the atomic scale details of the confining interface. Here, we report experimental observation of a valley dependent anisotropic spin splitting in a Si QD with an integrated micro-magnet and an external magnetic field. We show by atomistic calculations that the spin-orbit interaction (SOI), which is often ignored in bulk silicon, plays a major role in the measured anisotropy. Moreover, inhomogeneities such as interface steps strongly affect the spin splittings and their valley dependence. This atomic-scale understanding of the intrinsic and extrinsic factors controlling the valley dependent spin properties is a key requirement for successful manipulation of quantum information in Si QDs. △ Less

Submitted 17 August, 2017; v1 submitted 20 February, 2017; originally announced February 2017.

Comments: 9 pages, 5 figures, supplementary (13 pages, 7 figures)

Journal ref: npj Quantum Information 4, 26 (2018)

Effects of charge noise on a pulse-gated singlet-triplet $S-T_-$ qubit

Authors: Zhenyi Qi, X. Wu, D. R. Ward, J. R. Prance, Dohun Kim, John King Gamble, R. T. Mohr, Zhan Shi, D. E. Savage, M. G. Lagally, M. A. Eriksson, Mark Friesen, S. N. Coppersmith, M. G. Vavilov

Abstract: We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from c… ▽ More We study the dynamics of a pulse-gated semiconductor double quantum dot qubit. In our experiments, the qubit coherence times are relatively long, but the visibility of the quantum oscillations is low. We show that these observations are consistent with a theory that incorporates decoherence arising from charge noise that gives rise to detuning fluctuations of the double dot. Because effects from charge noise are largest near the singlet-triplet avoided level crossing, the visibility of the oscillations are low when the singlet-triplet avoided level crossing occurs in the vicinity of the charge degeneracy point crossed during the manipulation, but there is only modest dephasing at the large detuning value at which the quantum phase accumulates. This theory agrees well with experimental data and predicts that the visibility can be increased greatly by appropriate tuning of the interdot tunneling rate. △ Less

Submitted 15 June, 2017; v1 submitted 24 January, 2017; originally announced January 2017.

Journal ref: Phys. Rev. B 96, 115305 (2017)

Extending the coherence of a quantum dot hybrid qubit

Authors: Brandur Thorgrimsson, Dohun Kim, Yuan-Chi Yang, L. W. Smith, C. B. Simmons, Daniel R. Ward, Ryan H. Foote, J. Corrigan, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operatin… ▽ More Identifying and ameliorating dominant sources of decoherence are important steps in understanding and improving quantum systems. Here we show that the free induction decay time ($T_{2}^{*}$) and the Rabi decay rate ($Γ_{\mathrm{Rabi}}$) of the quantum dot hybrid qubit can be increased by more than an order of magnitude by appropriate tuning of the qubit parameters and operating points. By operating in the spin-like regime of this qubit, and choosing parameters that increase the qubit's resilience to charge noise (which we show is presently the limiting noise source for this qubit), we achieve a Ramsey decay time $T_{2}^{*}$ of $177~\mathrm{ns}$ and a Rabi decay time, $1/Γ_{\mathrm{Rabi}}$, exceeding $1~\mathrm{μs}$. We find that the slowest $Γ_{\mathrm{Rabi}}$ is limited by fluctuations in the Rabi frequency induced by charge noise and not by fluctuations in the qubit energy itself. △ Less

Submitted 19 June, 2017; v1 submitted 15 November, 2016; originally announced November 2016.

Comments: 10 pages, 6 figures. Supplementary material is included as appendices

Journal ref: npj Quantum Information 3, Article number: 32 (2017)

Dressed photon-orbital states in a quantum dot: Inter-valley spin resonance

Authors: P. Scarlino, E. Kawakami, T. Jullien, D. R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces tran… ▽ More The valley degree of freedom is intrinsic to spin qubits in Si/SiGe quantum dots. It has been viewed alternately as a hazard, especially when the lowest valley-orbit splitting is small compared to the thermal energy, or as an asset, most prominently in proposals to use the valley degree of freedom itself as a qubit. Here we present experiments in which microwave electric field driving induces transitions between both valley-orbit and spin states. We show that this system is highly nonlinear and can be understood through the use of dressed photon-orbital states, enabling a unified understanding of the six microwave resonance lines we observe. Some of these resonances are inter-valley spin transitions that arise from a non-adiabatic process in which both the valley and the spin degree of freedom are excited simultaneously. For these transitions, involving a change in valley-orbit state, we find a tenfold increase in sensitivity to electric fields and electrical noise compared to pure spin transitions, strongly reducing the phase coherence when changes in valley-orbit index are incurred. In contrast to this non-adiabatic transition, the pure spin transitions, whether arising from harmonic or subharmonic generation, are shown to be adiabatic in the orbital sector. The non-linearity of the system is most strikingly manifest in the observation of a dynamical anti-crossing between a spin-flip, inter-valley transition and a three-photon transition enabled by the strong nonlinearity we find in this seemly simple system. △ Less

Submitted 18 May, 2017; v1 submitted 23 August, 2016; originally announced August 2016.

Comments: 23 pages, 11 figures, supplementary material included

Journal ref: Phys. Rev. B 95, 165429 (2017)

A decoherence-free subspace in a charge quadrupole qubit

Authors: Mark Friesen, Joydip Ghosh, M. A. Eriksson, S. N. Coppersmith

Abstract: Quantum computing promises significant speed-up for certain types of computational problems. However, robust implementations of semiconducting qubits must overcome the effects of charge noise that currently limit coherence during gate operations. Here we describe a scheme for protecting solid-state qubits from uniform electric field fluctuations by generalizing the concept of a decoherence-free su… ▽ More Quantum computing promises significant speed-up for certain types of computational problems. However, robust implementations of semiconducting qubits must overcome the effects of charge noise that currently limit coherence during gate operations. Here we describe a scheme for protecting solid-state qubits from uniform electric field fluctuations by generalizing the concept of a decoherence-free subspace for spins, and we propose a specific physical implementation: a quadrupole charge qubit formed in a triple quantum dot. The unique design of the quadrupole qubit enables a particularly simple pulse sequence for suppressing the effects of noise during gate operations. Simulations yield gate fidelities 10-1,000 times better than traditional charge qubits, depending on the magnitude of the environmental noise. Our results suggest that any qubit scheme employing Coulomb interactions (for example, encoded spin qubits or two-qubit gates) could benefit from such a quadrupolar design. △ Less

Submitted 10 July, 2017; v1 submitted 5 May, 2016; originally announced May 2016.

Comments: 10 pages, 3 figures, Supplementary Information included as appendices

Journal ref: Nature Commun. 8, 15923 (2017)

State-conditional coherent charge qubit oscillations in a Si/SiGe quadruple quantum dot

Authors: D. R. Ward, Dohun Kim, D. E. Savage, M. G. Lagally, R. H. Foote, Mark Friesen, S. N. Coppersmith, Mark A. Eriksson

Abstract: Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscil… ▽ More Universal quantum computation requires high fidelity single qubit rotations and controlled two qubit gates. Along with high fidelity single qubit gates, strong efforts have been made in developing robust two qubit logic gates in electrically-gated quantum dot systems to realize a compact and nano-fabrication-compatible architecture. Here, we perform measurements of state-conditional coherent oscillations of a charge qubit. Using a quadruple quantum dot formed in a Si/SiGe heterostructure, we show the first demonstration of coherent two-axis control of a double quantum dot charge qubit in undoped Si/SiGe, performing Larmor and Ramsey oscillation measurements. We extract the strength of the capacitive coupling between double quantum dots by measuring the detuning energy shift ($\approx$ 75 $μ$eV) of one double dot depending on the excess charge configuration of the other double dot. We further demonstrate that the strong capacitive coupling allows fast conditional Landau-Zener-Stuckelberg interferences with conditonal $π$ phase flip time about 80 ps, showing promising pathways toward multi-qubit entanglement control in semiconductor quantum dots. △ Less

Submitted 27 April, 2016; originally announced April 2016.

Comments: 9 pages, 8 figures including supplementary information

Journal ref: npj. Quant. Inf. 2 16032 (2016)

Gate fidelity and coherence of an electron spin in a Si/SiGe quantum dot with micromagnet

Authors: E. Kawakami, T. Jullien, P. Scarlino, D. R. Ward, D. E. Savage, M. G. Lagally, V. V. Dobrovitski, Mark Friesen, S. N. Coppersmith, M. A. Eriksson, L. M. K. Vandersypen

Abstract: The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from… ▽ More The gate fidelity and the coherence time of a qubit are important benchmarks for quantum computation. We construct a qubit using a single electron spin in a Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of $\approx$ 99$\%$ using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in substrate. The coherence time measured using dynamical decoupling extends up to $\approx$ 400 $μ$s for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10 kHz $-$ 1 MHz range, possibly because charge noise affecting the spin via the micromagnet gradient. This work shows that an electron spin in a Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification. △ Less

Submitted 26 February, 2016; originally announced February 2016.

Journal ref: PNAS 2016 113 (42) 11738-11743

Characterization of a gate-defined double quantum dot in a Si/SiGe nanomembrane

Authors: T. J. Knapp, R. T. Mohr, Yize Stephanie Li, Brandur Thorgrimsson, Ryan H. Foote, Xian Wu, Daniel R. Ward, D. E. Savage, M. G. Lagally, Mark Friesen, S. N. Coppersmith, M. A. Eriksson

Abstract: We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, m… ▽ More We report the fabrication and characterization of a gate-defined double quantum dot formed in a Si/SiGe nanomembrane. In the past, all gate-defined quantum dots in Si/SiGe heterostructures were formed on top of strain-graded virtual substrates. The strain grading process necessarily introduces misfit dislocations into a heterostructure, and these defects introduce lateral strain inhomogeneities, mosaic tilt, and threading dislocations. The use of a SiGe nanomembrane as the virtual substrate enables the strain relaxation to be entirely elastic, eliminating the need for misfit dislocations. However, in this approach the formation of the heterostructure is more complicated, involving two separate epitaxial growth procedures separated by a wet-transfer process that results in a buried non-epitaxial interface 625 nm from the quantum dot. We demonstrate that in spite of this buried interface in close proximity to the device, a double quantum dot can be formed that is controllable enough to enable tuning of the inter-dot tunnel coupling, the identification of spin states, and the measurement of a singlet-to-triplet transition as a function of an applied magnetic field. △ Less

Submitted 29 October, 2015; originally announced October 2015.

Comments: 9 pages, 4 figures

Journal ref: Nanotechnology 27, 154002 (2016)