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Peak splitting and bias fields in ferroelectric hafnia mediated by interface charge effects
Authors:
Moritz Engl,
Wassim Hamouda,
Ines Häusler,
Suzanne Lancaster,
Luca Carpentieri,
Thomas Mikolajick,
Catherine Dubourdieu,
Stefan Slesazeck
Abstract:
The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorporation of a niobium oxide layer at different positions in metal-ferroelectric-metal and metal-ferroelectric-insulator-metal stacks is used to modify the pristine state of the device. X-ray photoelectron spectroscopy and…
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The pristine state of hafnium based ferroelectric devices exhibits various unwanted properties, such as imprint and peak splitting, which diminish with bipolar cycling. The incorporation of a niobium oxide layer at different positions in metal-ferroelectric-metal and metal-ferroelectric-insulator-metal stacks is used to modify the pristine state of the device. X-ray photoelectron spectroscopy and transmission electron microscopy measurements are used to investigate the influence of niobium oxide on the zirconium hafnium oxide layer. It is hypothesized that the charged vacancies generated by the introduced niobium oxide in the adjacent zirconium hafnium oxide layer result in an electric bias field that influences the pristine polarization state of the domains. A comparison of different stacks shows that peak splitting in the pristine state is most likely related to the formation of opposing electric bias fields in upwards and downwards polarized domains. Furthermore, the incorporation of niobium oxide in the zirconium hafnium oxide/aluminum oxide capacitor stack in between the ferroelectric and insulating layer leads to a peak splitting free device without imprint, which could be explained by the increased influence of charge trapping near the zirconium hafnium oxide-/niobium oxide and niobium oxide-/aluminum oxide interfaces.
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Submitted 14 March, 2025;
originally announced March 2025.
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Weight update in ferroelectric memristors with identical and non-identical pulses
Authors:
Suzanne Lancaster,
Maximilien Remillieux,
Moritz Engl,
Viktor Havel,
Claudia Silva,
Xuetao Wang,
Thomas Mikolajick,
Stefan Slesazeck
Abstract:
Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either non-identical or identical pulses, and with time delays between the pulses ranging from 1 us to 10…
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Ferroelectric tunnel junctions (FTJs) are a class of memristor which promise low-power, scalable, field-driven analog operation. In order to harness their full potential, operation with identical pulses is targeted. In this paper, several weight update schemes for FTJs are investigated, using either non-identical or identical pulses, and with time delays between the pulses ranging from 1 us to 10 s. Experimentally, a method for achieving non-linear weight update with identical pulses at long programming delays is demonstrated by limiting the switching current via a series resistor. Simulations show that this concept can be expanded to achieve weight update in a 1T1C cell by limiting the switching current through a transistor operating in sub-threshold or saturation mode. This leads to a maximum linearity in the weight update of 86% for a dynamic range (maximum switched polarization) of 30 μC/cm2. It is further demonstrated via simulation that engineering the device to achieve a narrower switching peak increases the linearity in scaled devices to >93 % for the same range.
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Submitted 8 August, 2024; v1 submitted 22 July, 2024;
originally announced July 2024.
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Investigating charge trapping in ferroelectric thin films through transient measurements
Authors:
Suzanne Lancaster,
Patrick D Lomenzo,
Moritz Engl,
Bohan Xu,
Thomas Mikolajick,
Uwe Schroeder,
Stefan Slesazeck
Abstract:
A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a…
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A measurement technique is presented to quantify the polarization loss in ferroelectric thin films as a function of delay time during the first 100s after switching. This technique can be used to investigate charge trapping in ferroelectric thin films by analyzing the magnitude and rate of polarization loss. Exemplary measurements have been performed on Hf0.5Zr0.5O2 (HZO) and HZO/Al2O3 films, as a function of pulse width and temperature. It is found that the competing effects of the depolarization field, internal bias field and charge trapping lead to a characteristic Gaussian dependence of the rate of polarization loss on the delay time. From this, a charge trapping and screening model could be identified which describes the dynamics of polarization loss on short timescales.
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Submitted 29 June, 2022;
originally announced June 2022.
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Ballistic and resonant negative photocurrents in semiconducting carbon nanotubes
Authors:
Christoph Karnetzky,
Lukas Sponfeldner,
Max Engl,
Alexander W. Holleitner
Abstract:
Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without…
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Ultrafast photocurrent experiments are performed on semiconducting, single-walled carbon nanotubes under a resonant optical excitation of their subbands. The photogenerated excitons are dissociated at large electric fields and the resulting transport of the charge carriers turns out to be ballistic. Thermionic emission processes to the contacts dominate the photocurrent. The charge current without laser excitation is well described by a Fowler-Nordheim tunneling. The time-averaged photocurrent changes polarity as soon as sufficient charge carriers are injected from the contacts, which can be explained by an effective population inversion in the optically pumped subbands.
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Submitted 9 January, 2017;
originally announced January 2017.
