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The intrinsic (trap-free) transistors based on perovskite single crystals with self-passivated surfaces
Authors:
V. Bruevich,
L. Kasaei,
S. Rangan,
H. Hijazi,
Z. Zhang,
T. Emge,
E. Andrei,
R. A. Bartynski,
L. C. Feldman,
V. Podzorov
Abstract:
Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs bas…
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Lead-halide perovskites emerged as novel semiconducting materials suitable for a variety of optoelectronic applications. However, fabrication of reliable perovskite field-effect transistors (FETs), the devices necessary for the fundamental and applied research on charge transport properties of this class of materials, has proven challenging. Here we demonstrate high-performance perovskite FETs based on epitaxial, single crystalline thin films of cesium lead bromide (CsPbBr3). An improved vapor-phase epitaxy has allowed growing truly large-area, atomically flat films of this perovskite with excellent structural and surface properties. FETs based on these CsPbBr3 films exhibit textbook transistor characteristics, with a very low hysteresis and high intrinsic charge carrier mobility. Availability of such high-performance devices has allowed the study of Hall effect in perovskite FETs for the first time. Our magneto-transport measurements show that the charge carrier mobility of CsPbBr3 FETs increases on cooling, from ~ 30 cm2V-1s-1 at room temperature, to ~ 250 cm2V-1s-1 at 50 K, exhibiting a band transport mostly limited by phonon scattering. The epitaxial growth and FET fabrication methodologies described here can be naturally extended to other perovskites, including the hybrid ones, thus representing a technological leap forward, overcoming the performance bottleneck in research on perovskite FETs.
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Submitted 24 December, 2021;
originally announced December 2021.
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Disorder-driven topological phase transition in Bi2Se3 films
Authors:
Matthew Brahlek,
Nikesh Koirala,
Maryam Salehi,
Jisoo Moon,
Wenhan Zhang,
Haoxiang Li,
Xiaoqing Zhou,
Myung-Geun Han,
Liang Wu,
Thomas Emge,
Hang-Dong Lee,
Can Xu,
Seuk Joo Rhee,
Torgny Gustafsson,
N. P. Armitage,
Yimei Zhu,
Daniel S. Dessau,
Weida Wu,
Seongshik Oh
Abstract:
Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved ph…
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Topological insulators (TI) are a phase of matter that host unusual metallic states on their surfaces. Unlike the states that exist on the surface of conventional materials, these so-called topological surfaces states (TSS) are protected against disorder-related localization effects by time reversal symmetry through strong spin-orbit coupling. By combining transport measurements, angle-resolved photo-emission spectroscopy and scanning tunneling microscopy, we show that there exists a critical level of disorder beyond which the TI Bi2Se3 loses its ability to protect the metallic TSS and transitions to a fully insulating state. The absence of the metallic surface channels dictates that there is a change in topological character, implying that disorder can lead to a topological phase transition even without breaking the time reversal symmetry. This observation challenges the conventional notion of topologically-protected surface states, and will provoke new studies as to the fundamental nature of topological phase of matter in the presence of disorder.
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Submitted 3 October, 2016; v1 submitted 20 September, 2016;
originally announced September 2016.
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Synthesis and properties of charge-ordered thallium halide perovskites, CsTl1+0.5Tl3+0.5X3 (X = F, Cl)- theoretical precursors for superconductivity?
Authors:
M. Retuerto,
T. Emge,
J. Hadermann,
P. W. Stephens,
M. R. Li,
Z. P. Yin,
M. Croft,
A. Ignatov,
S. J. Zhang,
Z. Yuan,
C. Jin,
J. W. Simonson,
M. C. Aronson,
A. Pan,
D. N. Basov,
G. Kotliar,
M. Greenblatt
Abstract:
Recently CsTlCl3 and CsTlF3 perovskites were theoretically predicted to be potential superconductors if they are optimally doped. The synthesis of these two compounds, together with a complete characterization of the samples are reported. CsTlCl3 is obtained as orange crystals in two different polymorphs: a tetragonal (I4/m) and a cubic (Fm-3m) phase. CsTlF3 is formed as a light brown powder, also…
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Recently CsTlCl3 and CsTlF3 perovskites were theoretically predicted to be potential superconductors if they are optimally doped. The synthesis of these two compounds, together with a complete characterization of the samples are reported. CsTlCl3 is obtained as orange crystals in two different polymorphs: a tetragonal (I4/m) and a cubic (Fm-3m) phase. CsTlF3 is formed as a light brown powder, also as a double cubic perovskite (Fm-3m). In all three CsTlX3 phases Tl1+ and Tl3+ were located in two different crystallographic positions that accommodate their different bond lengths. In CsTlCl3 some Tl vacancies are found in the Tl1+ position. The charge ordering between Tl1+ and Tl3+ was confirmed by x-ray absorption and Raman spectroscopy. The Raman spectroscopy of CsTlCl3 under high pressure (58 GPa) did not indicate any phase transition to a possible single Tl2+ state. However, the highly insulating material becomes less resistive with increasing high pressure, while undergoing a change in the optical properties, from transparent to deeply opaque red, indicative of a decrease of the band gap. The theoretical design and experimental validation of the existence of CsTlF3 and CsTlCl3 cubic perovskites is the necessary first step in confirming the theoretical prediction of superconductivity in these materials.
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Submitted 26 September, 2013; v1 submitted 10 February, 2013;
originally announced February 2013.
