Showing 1–40 of 40 results for author: Elliott, S R

Medium-range structural order in amorphous arsenic

Authors: Yuanbin Liu, Yuxing Zhou, Richard Ademuwagun, Luc Walterbos, Janine George, Stephen R. Elliott, Volker L. Deringer

Abstract: Medium-range order (MRO) is a key structural feature of amorphous materials, but its origin and nature remain elusive. Here, we reveal the MRO in amorphous arsenic (a-As) using advanced atomistic simulations, based on machine-learned potentials derived using automated workflows. Our simulations accurately reproduce the experimental structure factor of a-As, especially the first sharp diffraction p… ▽ More Medium-range order (MRO) is a key structural feature of amorphous materials, but its origin and nature remain elusive. Here, we reveal the MRO in amorphous arsenic (a-As) using advanced atomistic simulations, based on machine-learned potentials derived using automated workflows. Our simulations accurately reproduce the experimental structure factor of a-As, especially the first sharp diffraction peak (FSDP), which is a signature of MRO. We compare and contrast the structure of a-As with that of its lighter homologue, red amorphous phosphorus (a-P), identifying the dihedral-angle distribution as a key factor differentiating the MRO in both. The pressure-dependent structural behaviors of a-As and a-P differ as well, which we link to the interplay of ring topology and structural entropy. We finally show that the origin of the FSDP is closely correlated with the size and spatial distribution of voids in the amorphous networks. Our work provides fundamental insights into MRO in an amorphous elemental system, and more widely it illustrates the usefulness of automation for machine-learning-driven atomistic simulations. △ Less

Submitted 2 September, 2025; originally announced September 2025.

Full-cycle device-scale simulations of memory materials with a tailored atomic-cluster-expansion potential

Authors: Yuxing Zhou, Daniel F. Thomas du Toit, Stephen R. Elliott, Wei Zhang, Volker L. Deringer

Abstract: Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to accelerate the modelling of PCMs, and yet it remains challenging to simultaneously reach the length and time scales required to simulate the operation of real-world PCM devices. Here, we show how ultra-fast machine-learned… ▽ More Computer simulations have long been key to understanding and designing phase-change materials (PCMs) for memory technologies. Machine learning is now increasingly being used to accelerate the modelling of PCMs, and yet it remains challenging to simultaneously reach the length and time scales required to simulate the operation of real-world PCM devices. Here, we show how ultra-fast machine-learned interatomic potentials, based on the atomic cluster expansion (ACE) framework, enable simulations of PCMs reflecting applications in devices with excellent scalability on high-performance computing platforms. We report full-cycle simulations -- including the time-consuming crystallisation process (from digital "zeroes" to "ones") -- thus representing the entire programming cycle for cross-point memory devices. We also showcase a simulation of full-cycle operations, relevant to neuromorphic computing, in a mushroom-type device geometry. Our work provides a springboard for the atomistic modelling of PCM-based memory and neuromorphic computing devices -- and, more widely, it illustrates the power of highly efficient ACE ML models for materials science and engineering. △ Less

Submitted 12 February, 2025; originally announced February 2025.

The pathway to chirality in elemental tellurium

Authors: Yuxing Zhou, Stephen R. Elliott, Daniel F. Thomas du Toit, Wei Zhang, Volker L. Deringer

Abstract: Chiral crystals, like chiral molecules, cannot be superimposed onto their mirror images -- a fundamental property that has been linked to interesting physical behavior and exploited in functional devices. Among the simplest inorganic systems with crystallographic chirality, elemental tellurium adopts crystal structures with right- or left-handed chains. However, understanding the formation mechani… ▽ More Chiral crystals, like chiral molecules, cannot be superimposed onto their mirror images -- a fundamental property that has been linked to interesting physical behavior and exploited in functional devices. Among the simplest inorganic systems with crystallographic chirality, elemental tellurium adopts crystal structures with right- or left-handed chains. However, understanding the formation mechanisms of those structures has been difficult due to the rapid crystallization of Te, which reaches the spatial and temporal resolution limits of even the most advanced experiments. Here, we report ultra-large-scale, quantum-mechanically accurate simulations that reveal mechanisms of crystallization and the origin of crystallographic chirality in solid Te. We identify a characteristic, disordered cube-like structural motif -- a transient bonding environment with only nanosecond lifetime -- that enables both the rapid crystallization of Te and mediates chirality transfer. Based on the resulting microscopic understanding, we are able to explain the switching behavior of Te-based electrical devices. △ Less

Submitted 28 October, 2024; v1 submitted 5 September, 2024; originally announced September 2024.

New insights into the origin of the first sharp diffraction peak in amorphous silica from an analysis of chemical and radial ordering

Authors: Parthapratim Biswas, Devilal Dahal, Stephen R. Elliott

Abstract: The structural origin of the first sharp diffraction peak (FSDP) in amorphous silica is studied by analyzing chemical and radial ordering of silicon (Si) and oxygen (O) atoms in binary amorphous networks. The study shows that the chemical order involving Si--O and O--O pairs play a major role in the formation of the FSDP in amorphous silica. This is supplemented by small contributions arising from… ▽ More The structural origin of the first sharp diffraction peak (FSDP) in amorphous silica is studied by analyzing chemical and radial ordering of silicon (Si) and oxygen (O) atoms in binary amorphous networks. The study shows that the chemical order involving Si--O and O--O pairs play a major role in the formation of the FSDP in amorphous silica. This is supplemented by small contributions arising from the relatively weak Si--Si correlations in the Fourier space. A shell-by-shell analysis of the radial correlations between Si--Si, Si--O and O--O atoms in the network reveals that the position and the intensity of the FSDP are largely determined by atomic pair correlations originating from the first two/three radial shells on a length scale of about 5--8 Å, whereas the fine structure of the intensity curve in the vicinity of the FSDP is perturbatively modified by atomic correlations arising from the radial shells beyond 8 Å. The study leads to a simple mathematical relationship between the position of the radial peaks ($r_k$) in the partial pair-correlation functions and the diffraction peaks ($Q_k$) that can be used to obtain approximate positions of the FSDP and the principal peak. The results are complemented by numerical calculations and an accurate semi-analytical expression for the diffraction intensity obtained from the partial pair-correlation functions of amorphous silica for a given radial shell. △ Less

Submitted 23 March, 2024; v1 submitted 15 March, 2024; originally announced March 2024.

Comments: 13 pages, 16 figures

Understanding defects in amorphous silicon with million-atom simulations and machine learning

Authors: Joe D. Morrow, Chinonso Ugwumadu, David A. Drabold, Stephen R. Elliott, Andrew L. Goodwin, Volker L. Deringer

Abstract: The structure of amorphous silicon is widely thought of as a fourfold-connected random network, and yet it is defective atoms, with fewer or more than four bonds, that make it particularly interesting. Despite many attempts to explain such "dangling-bond" and "floating-bond" defects, respectively, a unified understanding is still missing. Here, we show that atomistic machine-learning methods can r… ▽ More The structure of amorphous silicon is widely thought of as a fourfold-connected random network, and yet it is defective atoms, with fewer or more than four bonds, that make it particularly interesting. Despite many attempts to explain such "dangling-bond" and "floating-bond" defects, respectively, a unified understanding is still missing. Here, we show that atomistic machine-learning methods can reveal the complex structural and energetic landscape of defects in amorphous silicon. We study an ultra-large-scale, quantum-accurate structural model containing a million atoms, and more than ten thousand defects, allowing reliable defect-related statistics to be obtained. We combine structural descriptors and machine-learned local atomic energies to develop a universal classification of the different types of defects in amorphous silicon. The results suggest a revision of the established floating-bond model by showing that fivefold-coordinated atoms in amorphous silicon exhibit a wide range of local environments, and it is shown that fivefold (but not threefold) coordination defects tend to cluster together. Our study provides new insights into one of the most widely studied amorphous solids, and has general implications for modelling and understanding defects in disordered materials beyond silicon alone. △ Less

Submitted 31 August, 2023; originally announced August 2023.

Ab initio studies of the impact of the Debye-Waller factor on the structural and dynamical properties of amorphous semiconductors: The case of $a$-Si

Authors: Devilal Dahal, Raymond Atta-Fynn, Stephen R. Elliott, Parthapratim Biswas

Abstract: This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory (DFT). The effects of temperature and structural disorder on the intensity of the diffraction maxima and the vibrational mean-square displacement (MSD) of Si ato… ▽ More This paper presents a first-principles study of the Debye-Waller factor and the Debye temperature for amorphous silicon ($a$-Si) from lattice-dynamical calculations and direct molecular-dynamics simulations using density-functional theory (DFT). The effects of temperature and structural disorder on the intensity of the diffraction maxima and the vibrational mean-square displacement (MSD) of Si atoms are studied in the harmonic approximation, with particular emphasis on the bond-length disorder, the presence of coordination defects, and microvoids in $a$-Si networks. It has been observed that the MSDs associated with tetrahedrally-bonded Si atoms are considerably lower than their dangling-bond counterparts -- originating from isolated and vacancy-induced clustered defects -- and those on the surface of microvoids, leading to an asymmetric non-gaussian tail in the distribution of atomic displacements. An examination of the effect of anharmonicity on the MSD at high temperatures using direct $ab$ $initio$ molecular-dynamics simulations (without the harmonic approximation) suggests that the vibrational motion in $a$-Si is practically unaffected by anharmonic effects at temperatures below 400 K, as far as the present DFT calculations are concerned. The Debye temperature of $a$-Si is found to be in the range of 488--541 K from specific-heat and MSD calculations using first-principles lattice-dynamical calculations in the harmonic approximation, which matches closely with the experimental value of 487--528 K obtained from specific-heat measurements of $a$-Si at low temperatures. △ Less

Submitted 15 July, 2023; originally announced July 2023.

Comments: 14 pages, 17 figures

Structure and Bonding in Amorphous Red Phosphorus

Authors: Yuxing Zhou, Stephen R. Elliott, Volker L. Deringer

Abstract: Amorphous red phosphorus (a-P) is one of the remaining puzzling cases in the structural chemistry of the elements. Here, we elucidate the structure, stability, and chemical bond-ing in a-P from first principles, combining machine-learning and density-functional theo-ry (DFT) methods. We show that a-P structures exist with a range of energies slightly higher than those of phosphorus nanorods, to wh… ▽ More Amorphous red phosphorus (a-P) is one of the remaining puzzling cases in the structural chemistry of the elements. Here, we elucidate the structure, stability, and chemical bond-ing in a-P from first principles, combining machine-learning and density-functional theo-ry (DFT) methods. We show that a-P structures exist with a range of energies slightly higher than those of phosphorus nanorods, to which they are closely related, and that the stability of a-P is linked to the degree of structural relaxation and medium-range order. We thus complete the stability range of phosphorus allotropes [Angew. Chem. Int. Ed. 2014, 53, 11629] by now including the previously poorly understood amorphous phase, and we quantify the covalent and van der Waals interactions in all main phases of phos-phorus. We also study the electronic densities of states, including those of hydrogenated a-P. Beyond the present study, our structural models are expected to enable wider-ranging first-principles investigations - for example, of a-P-based battery materials. △ Less

Submitted 9 November, 2022; originally announced November 2022.

Journal ref: Angew. Chem. Int. Ed. 62, e202216658 (2023)

Extended-range order in tetrahedral amorphous semiconductors: The case of amorphous silicon

Authors: Devilal Dahal, Stephen R. Elliott, Parthapratim Biswas

Abstract: This paper reports the presence of extended-range ordering in the atomic pair-correlation function of amorphous silicon ($a$-Si) using ultra-large atomistic models obtained from Monte Carlo and molecular-dynamics simulations. The extended-range order manifests itself in the form of radial oscillations, on the length scale of 20-40 angstrom, which are examined by directly analyzing the radial distr… ▽ More This paper reports the presence of extended-range ordering in the atomic pair-correlation function of amorphous silicon ($a$-Si) using ultra-large atomistic models obtained from Monte Carlo and molecular-dynamics simulations. The extended-range order manifests itself in the form of radial oscillations, on the length scale of 20-40 angstrom, which are examined by directly analyzing the radial distribution of atoms in distant coordination shells and comparing the same with those from a class of partially-ordered networks of Si atoms and disordered configurations of crystalline silicon from an information-theoretic point of view. The study suggests that the extended-range radial oscillations principally originate from the propagation of radial ordering from the first few atomic shells to a distance of up to 40 angstrom. The effect of these oscillations on the first sharp diffraction peak (FSDP) in the structure factor is addressed by obtaining a semi-analytical expression for the static structure factor of $a$-Si, and calculating an estimate of the error of the intensity of the FSDP associated with the truncation of radial information from distant shells. The results indicate that the extended-range oscillations do not have any noticeable effects on the position and intensity of the FSDP, which are primarily determined by the medium-range atomic correlations of up to a length of 20 angstrom in amorphous silicon. △ Less

Submitted 26 February, 2022; originally announced February 2022.

Comments: 12 pages, 17 figures

Structural transitions in dense disordered silicon from quantum-accurate ultra-large-scale simulations

Authors: Volker L. Deringer, Noam Bernstein, Gábor Csányi, Mark Wilson, David A. Drabold, Stephen R. Elliott

Abstract: Structurally disordered materials continue to pose fundamental questions, including that of how different disordered phases ("polyamorphs") can coexist and transform from one to another. As a widely studied case, amorphous silicon (a-Si) forms a fourfold-coordinated, covalent random network at ambient conditions, but much higher-coordinated, metallic-like phases under pressure. However, a detailed… ▽ More Structurally disordered materials continue to pose fundamental questions, including that of how different disordered phases ("polyamorphs") can coexist and transform from one to another. As a widely studied case, amorphous silicon (a-Si) forms a fourfold-coordinated, covalent random network at ambient conditions, but much higher-coordinated, metallic-like phases under pressure. However, a detailed mechanistic understanding of the liquid-amorphous and amorphous-amorphous transitions in silicon has been lacking, due to intrinsic limitations of even the most advanced experimental and computational techniques. Here, we show how machine-learning (ML)-driven simulations can break through this long-standing barrier, affording a comprehensive, quantum-accurate, and fully atomistic description of all relevant liquid and amorphous phases of silicon. Combining a model system size of 100,000 atoms (ten-nanometre length scale) with a prediction accuracy of a few meV per atom, our simulations reveal a remarkable, three-step transformation sequence for a-Si under increasing external pressure. First, up to 10-11 GPa, polyamorphic low- and high-density amorphous (LDA and HDA) regions are found to coexist, rather than appearing sequentially. Then, we observe a structural collapse into a distinct, very-high-density amorphous (VHDA) phase at 12-13 GPa, reminiscent of the dense liquid but being formed at a much lower temperature. Finally, our simulations indicate the transient nature of this VHDA phase: it rapidly nucleates crystallites at 13-16 GPa, ultimately leading to the formation of a poly-crystalline, simple-hexagonal structure, consistent with experiments but not seen in earlier simulations. △ Less

Submitted 16 December, 2019; originally announced December 2019.

Disorder by design: A data-driven approach to amorphous semiconductors without total-energy functionals

Authors: Dil K. Limbu, Stephen R. Elliott, Raymond Atta-Fynn, Parthapratim Biswas

Abstract: This paper addresses a difficult inverse problem that involves the reconstruction of a three-dimensional model of tetrahedral amorphous semiconductors via inversion of diffraction data. By posing the material-structure determination as a multi-objective optimization program, it has been shown that the problem can be solved accurately using a few structural constraints, but no total-energy function… ▽ More This paper addresses a difficult inverse problem that involves the reconstruction of a three-dimensional model of tetrahedral amorphous semiconductors via inversion of diffraction data. By posing the material-structure determination as a multi-objective optimization program, it has been shown that the problem can be solved accurately using a few structural constraints, but no total-energy functionals/forces, which describe the local chemistry of amorphous networks. The approach yields highly realistic models of amorphous silicon, with no or only a few coordination defects ($\le$ 1%), a narrow bond-angle distribution of width 9-11.5 degree, and an electronic gap of 0.8-1.4 eV. These data-driven information-based models have been found to produce electronic and vibrational properties of amorphous silicon that match accurately with experimental data and rival that of the Wooten-Winer-Weaire (W3) models. The study confirms the effectiveness of a multi-objective optimization approach to the structural determination of complex materials, and resolves a long-standing dispute concerning the uniqueness of a model of tetrahedral amorphous semiconductors obtained via inversion of diffraction data. △ Less

Submitted 4 December, 2019; originally announced December 2019.

Comments: 11 pages, 4 figures (incorporating 18 sub-figures)

Temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon: A first-principles study

Authors: Parthapratim Biswas, Durga Paudel, Raymond Atta-Fynn, Stephen R. Elliott

Abstract: The paper presents an $ab$ $initio$ study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon. By using large $a$-Si models, obtained from classical molecular-dynamics simulations, with a realistic void-volume density of 0.2%, the dynamics of Si and H atoms on the surface of the nanometer-size cavities were studied and their effects on the shape and size of… ▽ More The paper presents an $ab$ $initio$ study of temperature-induced nanostructural evolution of hydrogen-rich voids in amorphous silicon. By using large $a$-Si models, obtained from classical molecular-dynamics simulations, with a realistic void-volume density of 0.2%, the dynamics of Si and H atoms on the surface of the nanometer-size cavities were studied and their effects on the shape and size of the voids were examined using first-principles density-functional simulations. The results from $ab$ $initio$ calculations were compared with those obtained from using the modified Stillinger-Weber potential. The temperature-induced nanostructural evolution of the voids was examined by analyzing the three-dimensional distribution of Si and H atoms on/near void surfaces using the convex-hull approximation, and computing the radius of gyration of the corresponding convex hulls. A comparison of the results with those from the simulated values of the intensity in small-angle X-ray scattering of $a$-Si/$a$-Si:H in the Guinier approximation is also provided, along with a discussion on the dynamics of bonded and non-bonded hydrogen in the vicinity of voids. △ Less

Submitted 18 November, 2019; originally announced November 2019.

Comments: 29 pages, 13 figures

Chemical bonding in chalcogenides: the concept of multi-centre hyperbonding

Authors: T. H. Lee, S. R. Elliott

Abstract: The precise nature of chemical-bonding interactions in amorphous, and crystalline, chalcogenides is still unclear due to the complexity arising from the delocalization of bonding, and non-bonding, electrons. Although an increasing degree of electron delocalization for elements down a column of the periodic table is widely recognized, its influence on chemical-bonding interactions, and on consequen… ▽ More The precise nature of chemical-bonding interactions in amorphous, and crystalline, chalcogenides is still unclear due to the complexity arising from the delocalization of bonding, and non-bonding, electrons. Although an increasing degree of electron delocalization for elements down a column of the periodic table is widely recognized, its influence on chemical-bonding interactions, and on consequent material properties, of chalcogenides has not previously been comprehensively understood from an atomistic point of view. Here, we provide a chemical-bonding framework for understanding the behaviour of chalcogenides (and, in principle, other lone-pair materials) by studying prototypical Telluride non-volatile-memory, 'phase-change' materials (PCMs), and related chalcogenide compounds, via density-functional-theory, molecular-dynamics (DFT-MD) simulations. Identification of the presence of previously unconsidered multi-centre 'hyperbonding' (lone-pair-antibonding-orbital) interactions elucidates not only the origin of various material properties, and their contrast in magnitude between amorphous and crystalline phases, but also the very similar chemical-bonding nature between crystalline PCMs and one of the bonding subgroups (with the same bond length) found in amorphous PCMs, in marked contrast to existing viewpoints. The structure-property relationship established from this new bonding-interaction perspective will help in designing improved chalcogenide materials for diverse applications, based on a fundamental chemical-bonding point of view. △ Less

Submitted 20 April, 2020; v1 submitted 11 September, 2019; originally announced September 2019.

Comments: 4 figures

A first-principles study on the lattice thermal conductivity of irradiated glassy states of the Ge$_2$Sb$_2$Te$_5$ phase-change memory material

Authors: Felix C. Mocanu, Konstantinos Konstantinou, Stephen R. Elliott

Abstract: An analysis of thermal transients from non-equilibrium ab initio molecular-dynamics simulations can be used to calculate the thermal conductivity of materials with a short phonon mean-free path. We adapt the approach-to-equilibrium methodology to the three-dimensional case of a simulation that consists of a cubic core region at higher temperature approaching thermal equilibrium with a thermostatte… ▽ More An analysis of thermal transients from non-equilibrium ab initio molecular-dynamics simulations can be used to calculate the thermal conductivity of materials with a short phonon mean-free path. We adapt the approach-to-equilibrium methodology to the three-dimensional case of a simulation that consists of a cubic core region at higher temperature approaching thermal equilibrium with a thermostatted boundary. This leads to estimates of the lattice thermal conductivity for the glassy state of the phase-change memory material, Ge$_2$Sb$_2$Te$_5$, which are close to previously reported experimental measurements. Self-atom irradiation of the material, modelled using thermal spikes and stochastic-boundary conditions, results in glassy models with a significant reduction of the lattice thermal conductivity compared to the pristine glassy structure. This approach may prove to be useful in technological applications, e.g. for the suppression of thermal cross-talk in phase-change memory and data-storage devices. △ Less

Submitted 21 October, 2019; v1 submitted 3 June, 2019; originally announced June 2019.

Comments: 5 pages, 3 figures

Quantifying Chemical Structure and Atomic Energies in Amorphous Silicon Networks

Authors: Noam Bernstein, Bishal Bhattarai, Gábor Csányi, David A. Drabold, Stephen R. Elliott, Volker L. Deringer

Abstract: Amorphous materials are coming within reach of realistic computer simulations, but new approaches are needed to fully understand their intricate atomic structures. Here, we show how machine-learning (ML)-based techniques can give new, quantitative chemical insight into the atomic-scale structure of amorphous silicon (a-Si). Based on a similarity function ("kernel"), we define a structural metric t… ▽ More Amorphous materials are coming within reach of realistic computer simulations, but new approaches are needed to fully understand their intricate atomic structures. Here, we show how machine-learning (ML)-based techniques can give new, quantitative chemical insight into the atomic-scale structure of amorphous silicon (a-Si). Based on a similarity function ("kernel"), we define a structural metric that unifies the description of nearest- and next-nearest-neighbor environments in the amorphous state. We apply this to an ensemble of a-Si networks, generated in melt-quench simulations with an ML-based interatomic potential, in which we tailor the degree of ordering by varying the quench rates down to $10^{10}$ K/s (leading to a structural model that is lower in energy than the established WWW network). We then show how "machine-learned" atomic energies permit a chemical interpretation, associating coordination defects in a-Si with distinct energetic stability regions. The approach is straightforward and inexpensive to apply to arbitrary structural models, and it is therefore expected to have more general significance for developing a quantitative understanding of the amorphous state. △ Less

Submitted 27 November, 2018; originally announced November 2018.

Journal ref: Angew. Chem. Int. Ed. 58, 7057 (2019)

Small-angle X-ray scattering in amorphous silicon: A computational study

Authors: Durga Paudel, Raymond Atta-Fynn, David A. Drabold, Stephen R. Elliott, Parthapratim Biswas

Abstract: We present a computational study of small-angle X-ray scattering (SAXS) in amorphous silicon ($a$-Si) with particular emphasis on the morphology and microstructure of voids. The relationship between the scattering intensity in SAXS and the three-dimensional structure of nanoscale inhomogeneities or voids is addressed by generating ultra-large high-quality $a$-Si networks with 0.1-0.3% volume conce… ▽ More We present a computational study of small-angle X-ray scattering (SAXS) in amorphous silicon ($a$-Si) with particular emphasis on the morphology and microstructure of voids. The relationship between the scattering intensity in SAXS and the three-dimensional structure of nanoscale inhomogeneities or voids is addressed by generating ultra-large high-quality $a$-Si networks with 0.1-0.3% volume concentration of voids, as observed in experiments using SAXS and positron annihilation spectroscopy. A systematic study of the variation of the scattering intensity in the small-angle scattering region with the size, shape, number density, and the spatial distribution of the voids in the networks is presented. Our results suggest that the scattering intensity in the small-angle region is particularly sensitive to the size and the total volume-fraction of the voids, but the effect of the geometry or shape of the voids is less pronounced in the intensity profiles. A comparison of the average size of the voids obtained from the simulated values of the intensity, using the Guinier approximation and Kratky plots, with those from the spatial distribution of the atoms in the vicinity of void surfaces is presented. △ Less

Submitted 24 April, 2018; originally announced April 2018.

Comments: 13 pages and 14 figures

Realistic atomistic structure of amorphous silicon from machine-learning-driven molecular dynamics

Authors: Volker L. Deringer, Noam Bernstein, Albert P. Bartók, Matthew J. Cliffe, Rachel N. Kerber, Lauren E. Marbella, Clare P. Grey, Stephen R. Elliott, Gábor Csányi

Abstract: Amorphous silicon (a-Si) is a widely studied non-crystalline material, and yet the subtle details of its atomistic structure are still unclear. Here, we show that accurate structural models of a-Si can be obtained by harnessing the power of machine-learning algorithms to create interatomic potentials. Our best a-Si network is obtained by cooling from the melt in molecular-dynamics simulations, at… ▽ More Amorphous silicon (a-Si) is a widely studied non-crystalline material, and yet the subtle details of its atomistic structure are still unclear. Here, we show that accurate structural models of a-Si can be obtained by harnessing the power of machine-learning algorithms to create interatomic potentials. Our best a-Si network is obtained by cooling from the melt in molecular-dynamics simulations, at a rate of 10$^{11}$ K/s (that is, on the 10 ns timescale). This structure shows a defect concentration of below 2% and agrees with experiments regarding excess energies, diffraction data, as well as $^{29}$Si solid-state NMR chemical shifts. We show that this level of quality is impossible to achieve with faster quench simulations. We then generate a 4,096-atom system which correctly reproduces the magnitude of the first sharp diffraction peak (FSDP) in the structure factor, achieving the closest agreement with experiments to date. Our study demonstrates the broader impact of machine-learning interatomic potentials for elucidating accurate structures and properties of amorphous functional materials. △ Less

Submitted 7 March, 2018; originally announced March 2018.

Gaussian approximation potential modeling of lithium intercalation in carbon nanostructures

Authors: So Fujikake, Volker L. Deringer, Tae Hoon Lee, Marcin Krynski, Stephen R. Elliott, Gábor Csányi

Abstract: We demonstrate how machine-learning based interatomic potentials can be used to model guest atoms in host structures. Specifically, we generate Gaussian approximation potential (GAP) models for the interaction of lithium atoms with graphene, graphite, and disordered carbon nanostructures, based on reference density-functional theory (DFT) data. Rather than treating the full Li--C system, we demons… ▽ More We demonstrate how machine-learning based interatomic potentials can be used to model guest atoms in host structures. Specifically, we generate Gaussian approximation potential (GAP) models for the interaction of lithium atoms with graphene, graphite, and disordered carbon nanostructures, based on reference density-functional theory (DFT) data. Rather than treating the full Li--C system, we demonstrate how the energy and force differences arising from Li intercalation can be modeled and then added to a (prexisting and unmodified) GAP model of pure elemental carbon. Furthermore, we show the benefit of using an explicit pair potential fit to capture "effective" Li--Li interactions, to improve the performance of the GAP model. This provides proof-of-concept for modeling guest atoms in host frameworks with machine-learning based potentials, and in the longer run is promising for carrying out detailed atomistic studies of battery materials. △ Less

Submitted 13 February, 2018; v1 submitted 12 December, 2017; originally announced December 2017.

Comments: improved discussion, in particular in Section IV.B

n-Type Chalcogenides by Ion Implantation

Authors: Mark A. Hughes, Yanina Fedorenko, Behrad Gholipour, Jin Yao, Tae-Hoon Lee, Russell M. Gwilliam, Kevin P. Homewood, Steven Hinder, Daniel W. Hewak, Stephen R. Elliott, Richard J. Curry

Abstract: Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoe… ▽ More Carrier-type reversal to enable the formation of semiconductor p-n junctions is a prerequisite for many electronic applications. Chalcogenide glasses are p-type semiconductors and their applications have been limited by the extraordinary difficulty in obtaining n-type conductivity. The ability to form chalcogenide glass p-n junctions could improve the performance of phase-change memory and thermoelectric devices and allow the direct electronic control of nonlinear optical devices. Previously, carrier-type reversal has been restricted to the GeCh (Ch=S, Se, Te) family of glasses, with very high Bi or Pb doping concentrations (5 to 11 at.%) incorporated during high-temperature glass melting. Here we report the first n-type doping of chalcogenide glasses by ion implantation of Bi into GeTe and GaLaSO amorphous films, demonstrating rectification and photocurrent in a Bi-implanted GaLaSO device. The electrical doping effect of Bi is observed at a 100 times lower concentration than for Bi melt-doped GeCh glasses. △ Less

Submitted 20 November, 2014; originally announced November 2014.

Journal ref: Nature Communications (2014) 5:5346

Electrical properties of Bi-implanted amorphous chalcogenide films

Authors: Yanina G. Fedorenko, Mark A. Hughes, Julien L. Colaux, C. Jeynes, Russell M. Gwilliam, Kevin Homewood, B. Gholipour, J. Yao, Daniel W. Hewak, Tae-Hoon Lee, Stephen R. Elliott, Richard J. Curry

Abstract: The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films… ▽ More The impact of Bi implantation on the conductivity and the thermopower of amorphous chalcogenide films is investigated. Incorporation of Bi in Ge-Sb-Te and GeTe results in enhanced conductivity. The negative Seebeck coefficient confirms onset of the electron conductivity in GeTe implanted with Bi at a dose of 2x1016 cm-2. The enhanced conductivity is accompanied by defect accumulation in the films upon implantation as is inferred by using analysis of the space-charge limited current. The results indicate that native coordination defects in lone-pair semiconductors can be deactivated by means of ion implantation, and higher conductivity of the films stems from additional electrically active defects created by implantation of bismuth. △ Less

Submitted 9 December, 2014; v1 submitted 21 October, 2014; originally announced October 2014.

Comments: This is an extended version of the results presented in Proc. SPIE 8982, 898213 (2014)

Colloquium: Majorana Fermions in nuclear, particle and solid-state physics

Authors: S. R. Elliott, M. Franz

Abstract: Ettore Majorana (1906-1938) disappeared while traveling by ship from Palermo to Naples in 1938. His fate has never been fully resolved and several articles have been written that explore the mystery itself. His demise intrigues us still today because of his seminal work, published the previous year, that established symmetric solutions to the Dirac equation that describe a fermionic particle that… ▽ More Ettore Majorana (1906-1938) disappeared while traveling by ship from Palermo to Naples in 1938. His fate has never been fully resolved and several articles have been written that explore the mystery itself. His demise intrigues us still today because of his seminal work, published the previous year, that established symmetric solutions to the Dirac equation that describe a fermionic particle that is its own anti-particle. This work has long had a significant impact in neutrino physics, where this fundamental question regarding the particle remains unanswered. But the formalism he developed has found many uses as there are now a number of candidate spin-1/2 neutral particles that may be truly neutral with no quantum number to distinguish them from their anti-particles. If such particles exist, they will influence many areas of nuclear and particle physics. Most notably the process of neutrinoless double beta decay can only exist if neutrinos are massive Majorana particles. Hence, many efforts to search for this process are underway. Majorana's influence doesn't stop with particle physics, however, even though that was his original consideration. The equations he derived also arise in solid state physics where they describe electronic states in materials with superconducting order. Of special interest here is the class of solutions of the Majorana equation in one and two spatial dimensions at exactly zero energy. These Majorana zero modes are endowed with some remarkable physical properties that may lead to advances in quantum computing and, in fact, there is evidence that they have been experimentally observed. This review first summarizes the basics of Majorana's theory and its implications. It then provides an overview of the rich experimental programs trying to find a fermion that is its own anti-particle in nuclear, particle, and solid state physics. △ Less

Submitted 1 December, 2014; v1 submitted 19 March, 2014; originally announced March 2014.

Comments: Invited review for Reviews of Modern Physics; v2: shortened and reorganized version to appear in RMP, 28 pages 12 figures. This version emphasizes the distinction between the generic Majorana fermions in particle physics and Majorana zero modes discussed in condensed matter physics

Journal ref: Rev. Mod. Phys. 87, 137 (2015)

Atomic-charge distribution in glasses by terahertz spectroscopy

Authors: S. N. Taraskin, S. I. Simdyankin, S. R. Elliott

Abstract: It is demonstrated that the width of the uncorrelated atomic-charge distribution in glasses can be extracted from the frequency dependence of the coupling coefficient for the far-infrared absorption measured experimentally by the time-domain terahertz spectroscopy technique. This value for As2S3 glass is found to be 0.12 (e). A density functional theory-based tight-binding molecular dynamics mod… ▽ More It is demonstrated that the width of the uncorrelated atomic-charge distribution in glasses can be extracted from the frequency dependence of the coupling coefficient for the far-infrared absorption measured experimentally by the time-domain terahertz spectroscopy technique. This value for As2S3 glass is found to be 0.12 (e). A density functional theory-based tight-binding molecular dynamics model of As2S3 glass qualitatively supports these findings. △ Less

Submitted 29 August, 2007; originally announced August 2007.

Vibrational behaviour of a realistic amorphous-silicon model

Authors: J. K. Christie, S. N. Taraskin, S. R. Elliott

Abstract: The vibrational properties of a high-quality realistic model of amorphous silicon are examined. The longitudinal and transverse dynamical structure factors are calculated, and fitted to a damped harmonic oscillator (DHO) function. The width $Γ$ of the best-fit DHO to the longitudinal dynamical structure factor scales approximately as $k^{2}$ for wavevectors $k\lesssim0.55\textrmÅ^{-1}$, which is… ▽ More The vibrational properties of a high-quality realistic model of amorphous silicon are examined. The longitudinal and transverse dynamical structure factors are calculated, and fitted to a damped harmonic oscillator (DHO) function. The width $Γ$ of the best-fit DHO to the longitudinal dynamical structure factor scales approximately as $k^{2}$ for wavevectors $k\lesssim0.55\textrmÅ^{-1}$, which is above the Ioffe-Regel crossover frequency separating the propagating and diffusing regimes, occurring at $k=0.38\pm0.03\textrmÅ^{-1}$. Using the DHO function as a fitting function for the transverse dynamical structure factor (without theoretical justification), gives a dependence of $Γ\propto k^α$ with $α\sim2.5$ for wavevectors $k\lesssim0.7\textrmÅ^{-1}$. There was no evidence for $Γ\propto k^{4}$ behaviour for either polarization. △ Less

Submitted 9 January, 2007; originally announced January 2007.

Comments: 18 pages, 11 figures, uses Elsevier file 'elsart.cls', submitted to J. Non-Cryst. Solids

Universal Features of Terahertz Absorption in Disordered Materials

Authors: S. N. Taraskin, S. I. Simdyankin, S. R. Elliott, J. R. Neilson, T. Lo

Abstract: Using an analytical theory, experimental terahertz time-domain spectroscopy data and numerical evidence, we demonstrate that the frequency dependence of the absorption coupling coefficient between far-infrared photons and atomic vibrations in disordered materials has the universal functional form, C(omega) = A + B*omega^2, where the material-specific constants A and B are related to the distribu… ▽ More Using an analytical theory, experimental terahertz time-domain spectroscopy data and numerical evidence, we demonstrate that the frequency dependence of the absorption coupling coefficient between far-infrared photons and atomic vibrations in disordered materials has the universal functional form, C(omega) = A + B*omega^2, where the material-specific constants A and B are related to the distributions of fluctuating charges obeying global and local charge neutrality, respectively. △ Less

Submitted 7 April, 2006; originally announced April 2006.

Comments: 5 pages, 3 figs

Influence of copper on the electronic properties of amorphous chalcogenides

Authors: S. I. Simdyankin, M. Elstner, T. A. Niehaus, Th. Frauenheim, S. R. Elliott

Abstract: We have studied the influence of alloying copper with amorphous arsenic sulfide on the electronic properties of this material. In our computer-generated models, copper is found in two-fold near-linear and four-fold square-planar configurations, which apparently correspond to Cu(I) and Cu(II) oxidation states. The number of overcoordinated atoms, both arsenic and sulfur, grows with increasing con… ▽ More We have studied the influence of alloying copper with amorphous arsenic sulfide on the electronic properties of this material. In our computer-generated models, copper is found in two-fold near-linear and four-fold square-planar configurations, which apparently correspond to Cu(I) and Cu(II) oxidation states. The number of overcoordinated atoms, both arsenic and sulfur, grows with increasing concentration of copper. Overcoordinated sulfur is found in trigonal planar configuration, and overcoordinated (four-fold) arsenic is in tetrahedral configuration. Addition of copper suppresses the localization of lone-pair electrons on chalcogen atoms, and localized states at the top of the valence band are due to Cu 3d orbitals. Evidently, these additional Cu states, which are positioned at the same energies as the states due to ([As4]-)-([S_3]+) pairs, are responsible for masking photodarkening in Cu chalcogenides. △ Less

Submitted 8 April, 2005; originally announced April 2005.

Journal ref: Phys. Rev. B 72, 020202(R) (2005)

Statistical properties of the critical eigenstates in power-law random banded matrices across the band

Authors: C. J. Paley, S. N. Taraskin, S. R. Elliott

Abstract: The level-spacing distribution in the tails of the eigenvalue bands of the power-law random banded matrix (PRBM) ensemble have been investigated numerically. The change of level-spacing statistics across the band is examined for different coupling strengths and compared to the density of states for the different systems. It is confirmed that, by varying the eigenvalue region, the same level-spac… ▽ More The level-spacing distribution in the tails of the eigenvalue bands of the power-law random banded matrix (PRBM) ensemble have been investigated numerically. The change of level-spacing statistics across the band is examined for different coupling strengths and compared to the density of states for the different systems. It is confirmed that, by varying the eigenvalue region, the same level-spacing statistics can be reached as by varying the coupling strength. △ Less

Submitted 31 March, 2005; v1 submitted 9 March, 2005; originally announced March 2005.

Comments: 4 pages, 5 figures

Modelling the atomic structure of very high-density amorphous ice

Authors: J. K. Christie, M. Guthrie, C. A. Tulk, C. J. Benmore, D. D. Klug, S. N. Taraskin, S. R. Elliott

Abstract: The structure of very high-density amorphous (VHDA) ice has been modelled by positionally disordering three crystalline phases, namely ice IV, VI and XII. These phases were chosen because only they are stable or metastable in the region of the ice phase diagram where VHDA ice is formed, and their densities are comparable to that of VHDA ice. An excellent fit to the medium range of the experiment… ▽ More The structure of very high-density amorphous (VHDA) ice has been modelled by positionally disordering three crystalline phases, namely ice IV, VI and XII. These phases were chosen because only they are stable or metastable in the region of the ice phase diagram where VHDA ice is formed, and their densities are comparable to that of VHDA ice. An excellent fit to the medium range of the experimentally observed pair-correlation function g(r) of VHDA ice was obtained by introducing disorder into the positions of the H2O molecules, as well as small amounts of molecular rotational disorder, disorder in the O--H bond lengths and disorder in the H--O--H bond angles. The low-k behaviour of the experimental structure factor, S(k), is also very well reproduced by this disordered-crystal model. The fraction of each phase present in the best-fit disordered model is very close to that observed in the probable crystallization products of VHDA ice. In particular, only negligible amounts of ice IV are predicted, in accordance with experimental observation. △ Less

Submitted 17 March, 2005; v1 submitted 21 December, 2004; originally announced December 2004.

Comments: 4 pages, 3 figures, 1 table, v2: changes made in response to referees' comments, the justification for using certain ice phases is improved, and ice IV is now disordered as well

A new type of charged defect in amorphous chalcogenides

Authors: S. I. Simdyankin, T. A. Niehaus, G. Natarajan, Th. Frauenheim, S. R. Elliott

Abstract: We report on density-functional-based tight-binding (DFTB) simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect pair, [As4]--[S3]+, consisting of a four-fold coordinated arsenic site in a seesaw configuration and a three-fold coordinated sulfur site in a planar trigonal co… ▽ More We report on density-functional-based tight-binding (DFTB) simulations of a series of amorphous arsenic sulfide models. In addition to the charged coordination defects previously proposed to exist in chalcogenide glasses, a novel defect pair, [As4]--[S3]+, consisting of a four-fold coordinated arsenic site in a seesaw configuration and a three-fold coordinated sulfur site in a planar trigonal configuration, was found in several models. The valence-alternation pairs S3+-S1- are converted into [As4]--[S3]+ pairs under HOMO-to-LUMO electronic excitation. This structural transformation is accompanied by a decrease in the size of the HOMO-LUMO band gap, which suggests that such transformations could contribute to photo-darkening in these materials. △ Less

Submitted 17 September, 2004; originally announced September 2004.

Comments: 5 pages, 2 figures

Journal ref: Phys. Rev. Lett. 94, 086401 (2005)

Atomic vibrations in disordered systems: Comparison of disordered diamond lattices and a realistic amorphous silicon model

Authors: J. K. Christie, S. N. Taraskin, S. R. Elliott

Abstract: Force-constant and positional disorder have been introduced into diamond lattice models in an attempt to mimic the vibrational properties of a realistic amorphous silicon model. Neither type of disorder is sufficient on its own to mimic the realistic model. By comparing the spectral densities of these models, it is shown that a combination of both disorders is a better representation, but still… ▽ More Force-constant and positional disorder have been introduced into diamond lattice models in an attempt to mimic the vibrational properties of a realistic amorphous silicon model. Neither type of disorder is sufficient on its own to mimic the realistic model. By comparing the spectral densities of these models, it is shown that a combination of both disorders is a better representation, but still not completely satisfactory. Topological disorder in these models was investigated by renumbering the atoms and examining the dynamical matrix graphically. The dynamical matrix of the realistic model is similar to that of a positionally-disordered lattice model, implying that the short-range order in both systems is similar. △ Less

Submitted 9 September, 2004; originally announced September 2004.

Comments: 4 pages; 3 figures; based on poster presentation for "Phonons 2004" conference

Structural characteristics of positionally-disordered lattices: relation to the first sharp diffraction peak in glasses

Authors: J. K. Christie, S. N. Taraskin, S. R. Elliott

Abstract: Positional disorder has been introduced into the atomic structure of certain crystalline lattices, and the orientationally-averaged structure factor S(k) and pair-correlation function g(r) of these disordered lattices have been studied. Analytical expressions for S(k) and g(r) for Gaussian positional disorder in 2D and 3D are confirmed with precise numerical simulations. These analytic results a… ▽ More Positional disorder has been introduced into the atomic structure of certain crystalline lattices, and the orientationally-averaged structure factor S(k) and pair-correlation function g(r) of these disordered lattices have been studied. Analytical expressions for S(k) and g(r) for Gaussian positional disorder in 2D and 3D are confirmed with precise numerical simulations. These analytic results also have a bearing on the unsolved Gauss circle problem in mathematics. As the positional disorder increases, high-k peaks in S(k) are destroyed first, eventually leaving a single peak, that with the lowest-k value. The pair-correlation function for lattices with such high levels of positional disorder exhibits damped oscillations, with a period equal to the separation between the furthest-separated (lowest-k) lattice planes. The last surviving peak in S(k) is, for example for silicon and silica, at a wavevector nearly identical to that of the experimentally-observed first sharp diffraction peak (FSDP) in the amorphous phases of those materials. Thus, for these amorphous materials at least, the FSDP can be regarded as arising from scattering from atomic configurations equivalent to the single family of positionally-disordered local Bragg planes having the furthest separation. △ Less

Submitted 11 August, 2004; v1 submitted 10 June, 2004; originally announced June 2004.

Comments: v2: changes in response to referees' comments: Figure 2 made more readable, improved discussion of height of peaks in S(k), other minor changes 4 pages, 3 figures, submitted to Physical Review B

Neutron-scattering studies of arsenic sulphide glasses

Authors: J. H. Lee, A. C. Hannon, S. R. Elliott

Abstract: High-resolution neutron-scattering measurements have been performed on bulk glasses of As2S3 and As2S3I1.65 at a spallation neutron source. For the case of As2S3, an isotopic-substitution experiment involving the S isotope has allowed some of the various pair correlations contributing to the second peak in the radial distribution function to be determined by the method of first differences. For… ▽ More High-resolution neutron-scattering measurements have been performed on bulk glasses of As2S3 and As2S3I1.65 at a spallation neutron source. For the case of As2S3, an isotopic-substitution experiment involving the S isotope has allowed some of the various pair correlations contributing to the second peak in the radial distribution function to be determined by the method of first differences. For the ternary glass, it has been confirmed that iodine bonds preferentially to As atoms, and that on average each As atom is coordinated to one iodine and two sulphur atoms in the first coordination shell. △ Less

Submitted 24 February, 2004; originally announced February 2004.

Simulation of the physical properties of the chalcogenide glass As$_2$S$_3$ using a density-functional-based tight-binding method

Authors: S. I. Simdyankin, S. R. Elliott, Z. Hajnal, T. A. Niehaus, Th. Frauenheim

Abstract: We have used a density-functional-based tight-binding method in order to create structural models of the canonical chalcogenide glass, amorphous (a-)As$_2$S$_3$. The models range from one containing defects that are both chemical (homopolar bonds) and topological (valence-alternation pairs) in nature to one that is defect-free (stoichiometric). The structural, vibrational and electronic properti… ▽ More We have used a density-functional-based tight-binding method in order to create structural models of the canonical chalcogenide glass, amorphous (a-)As$_2$S$_3$. The models range from one containing defects that are both chemical (homopolar bonds) and topological (valence-alternation pairs) in nature to one that is defect-free (stoichiometric). The structural, vibrational and electronic properties of the simulated models are in good agreement with experimental data where available. The electronic densities of states obtained for all models show clean optical band gaps. A certain degree of electron-state localization at the band edges is observed for all models, which suggests that photoinduced phenomena in chalcogenide glasses may not necessarily be attributed to the excitation of defects of only one particular kind. △ Less

Submitted 9 December, 2003; originally announced December 2003.

Journal ref: Phys. Rev. B 69, 144202 (2004)

Disorder-Induced Vibrational Localization

Authors: J. J. Ludlam, S. N. Taraskin, S. R. Elliott

Abstract: The vibrational equivalent of the Anderson tight-binding Hamiltonian has been studied, with particular focus on the properties of the eigenstates at the transition from extended to localized states. The critical energy has been found approximately for several degrees of force-constant disorder using system-size scaling of the multifractal spectra of the eigenmodes, and the spectrum at which ther… ▽ More The vibrational equivalent of the Anderson tight-binding Hamiltonian has been studied, with particular focus on the properties of the eigenstates at the transition from extended to localized states. The critical energy has been found approximately for several degrees of force-constant disorder using system-size scaling of the multifractal spectra of the eigenmodes, and the spectrum at which there is no system-size dependence has been obtained. This is shown to be in good agreement with the critical spectrum for the electronic problem, which has been derived both numerically and by analytic means. Universality of the critical states is therefore suggested also to hold for the vibrational problem. △ Less

Submitted 1 August, 2002; originally announced August 2002.

Comments: 4 pages, 4 figures

Spatial decay of the single-particle density matrix in tight-binding metals: +AFwAXA- analytic results in two dimensions

Authors: S. N. Taraskin, P. A. Fry, Xiadong Zhang, D. A. Drabold, S. R. Elliott

Abstract: Analytical results for the asymptotic spatial decay of the density matrix $+AFw-rho({+AFw-bf r},{+AFw-bf r^+AFw-prime})$ in the tight-binding model of the two-dimensional metal are presented. In various dimensions D, it is found analytically and numerically that the density matrix decays with distance according to the power law,… ▽ More Analytical results for the asymptotic spatial decay of the density matrix $+AFw-rho({+AFw-bf r},{+AFw-bf r^+AFw-prime})$ in the tight-binding model of the two-dimensional metal are presented. In various dimensions D, it is found analytically and numerically that the density matrix decays with distance according to the power law, $+AFw-rho({+AFw-bf r},{+AFw-bf r^+AFw-prime}) +AFw-propto |{+AFw-bf r}-{+AFw-bf r^+AFw-prime}|^{-(D+-1)/2}$. △ Less

Submitted 19 September, 2002; v1 submitted 18 July, 2002; originally announced July 2002.

Comments: 4 pages, 5 figures

Vector vibrations and the Ioffe-Regel crossover in disordered lattices

Authors: S. N. Taraskin, S. R. Elliott

Abstract: The spectral density for vector vibrations in the f.c.c. lattice with force-constant disorder is analysed within the coherent potential approximation. The phase diagram showing the weak- and strong-scattering regimes is presented and compared with that for electrons. The weak-scattering regime for external long-wavelength vibrational plane waves is shown to be due to sum-rule correlations in the… ▽ More The spectral density for vector vibrations in the f.c.c. lattice with force-constant disorder is analysed within the coherent potential approximation. The phase diagram showing the weak- and strong-scattering regimes is presented and compared with that for electrons. The weak-scattering regime for external long-wavelength vibrational plane waves is shown to be due to sum-rule correlations in the dynamical matrix. A secondary peak below the Brillouin peak for sufficiently large wavevectors is found for the lattice models. The results obtained are supported by precise numerical solutions. △ Less

Submitted 25 April, 2002; originally announced April 2002.

Comments: 21 pages, 13 figures

Journal ref: J.Phys.: Condens.Matter, v.14, 3143-3166 (2002)

Disorder-induced zero-energy spectral singularity for random matrices with correlations

Authors: S. N. Taraskin, S. R. Elliott

Abstract: A zero-energy mid-band singularity has been found in the energy spectrum of random matrices with correlations between diagonal and off-diagonal elements typical of vibrational problems. Two representative classes of matrices, characterizing the instantaneous configurations in liquids and mechanically unstable lattices (which mimic the former) have been analysed. At least for disordered lattice m… ▽ More A zero-energy mid-band singularity has been found in the energy spectrum of random matrices with correlations between diagonal and off-diagonal elements typical of vibrational problems. Two representative classes of matrices, characterizing the instantaneous configurations in liquids and mechanically unstable lattices (which mimic the former) have been analysed. At least for disordered lattice models, the singularity is universal and its origin can be explained within the mean-field treatment. △ Less

Submitted 15 November, 2001; originally announced November 2001.

Comments: 4 pages, 3 figures. to appear in Phys. Rev. B

Spatial decay of the single-particle density matrix in insulators: analytic results in two and three dimensions

Authors: S. N. Taraskin, D. A. Drabold, S. R. Elliott

Abstract: Analytic results for the asymptotic decay of the electron density matrix in insulators have been obtained in all three dimensions ($D=1 - 3$) for a tight-binding model defined on a simple cubic lattice. The anisotropic decay length is shown to be dependent on the energy parameters of the model. The existence of the power-law prefactor, $+AFw-propto r^{-D/2}$, is demonstrated. Analytic results for the asymptotic decay of the electron density matrix in insulators have been obtained in all three dimensions ($D=1 - 3$) for a tight-binding model defined on a simple cubic lattice. The anisotropic decay length is shown to be dependent on the energy parameters of the model. The existence of the power-law prefactor, $+AFw-propto r^{-D/2}$, is demonstrated. △ Less

Submitted 12 January, 2002; v1 submitted 22 October, 2001; originally announced October 2001.

Comments: 4 pages, 3 figures

Nature of vibrational eigenmodes in topologically disordered solids

Authors: S. I. Simdyankin, S. N. Taraskin, M. Elenius, S. R. Elliott, M. Dzugutov

Abstract: We use a local projectional analysis method to investigate the effect of topological disorder on the vibrational dynamics in a model glass simulated by molecular dynamics. Evidence is presented that the vibrational eigenmodes in the glass are generically related to the corresponding eigenmodes of its crystalline counterpart via disorder-induced level-repelling and hybridization effects. It is ar… ▽ More We use a local projectional analysis method to investigate the effect of topological disorder on the vibrational dynamics in a model glass simulated by molecular dynamics. Evidence is presented that the vibrational eigenmodes in the glass are generically related to the corresponding eigenmodes of its crystalline counterpart via disorder-induced level-repelling and hybridization effects. It is argued that the effect of topological disorder in the glass on the dynamical matrix can be simulated by introducing positional disorder in a crystalline counterpart. △ Less

Submitted 11 January, 2002; v1 submitted 21 August, 2001; originally announced August 2001.

Comments: 7 pages, 6 figures, PRB, to be published

Journal ref: Phys. Rev. B 65, 104302 (2002)

Connection between vibrational dynamics and topological order in simple glasses

Authors: S. I. Simdyankin, M. Dzugutov, S. N. Taraskin, S. R. Elliott

Abstract: We compare vibrational dynamics in two structurally distinct, simple monatomic model glasses simulated by molecular dynamics: the Lennard-Jones glass with an fcc-related structure and a glass with predominantly icosahedral short-range order. The former, characterised by a single local quasi-periodicity, supports only modes with acoustic behaviour. In the latter, the presence of optic modes and t… ▽ More We compare vibrational dynamics in two structurally distinct, simple monatomic model glasses simulated by molecular dynamics: the Lennard-Jones glass with an fcc-related structure and a glass with predominantly icosahedral short-range order. The former, characterised by a single local quasi-periodicity, supports only modes with acoustic behaviour. In the latter, the presence of optic modes and two incommensurate length scales is observed. This pattern of vibrational dynamics is shown to be closely related to that of a Frank-Kasper crystal having the same local topological order. △ Less

Submitted 28 November, 2000; v1 submitted 24 July, 2000; originally announced July 2000.

Comments: 6 pages, 5 figures, 1 table, submitted to PRB

Journal ref: Phys. Rev. B, vol. 63, art. No. 184301 (2001)

Vibrational properties of the one-component $σ$ phase

Authors: S. I. Simdyankin, S. N. Taraskin, M. Dzugutov, S. R. Elliott

Abstract: A structural model of a one-component $σ$-phase crystal has been constructed by means of molecular dynamics simulation. The phonon dispersion curves and the vibrational density of states were computed for this model. The dependence of the vibrational properties on the thermodynamical parameters was investigated. The vibrational density of states of the $σ$-phase structure is found to be similar… ▽ More A structural model of a one-component $σ$-phase crystal has been constructed by means of molecular dynamics simulation. The phonon dispersion curves and the vibrational density of states were computed for this model. The dependence of the vibrational properties on the thermodynamical parameters was investigated. The vibrational density of states of the $σ$-phase structure is found to be similar to that of a one-component glass with icosahedral local order. On the basis of this comparison it is concluded that the $σ$ phase can be considered to be a good crystalline reference structure for this glass. △ Less

Submitted 16 February, 2000; originally announced February 2000.

Journal ref: PHYS. REV. B vol. 62 (2000) p. 3223-3231

Scattering of plane-wave atomic vibrations in disordered structures

Authors: S. N. Taraskin, S. R. Elliott

Abstract: A theoretical analysis of the scattering of plane-wave atomic excitations in disordered solids has been made in terms of the spectral densities. Hybridization between transverse and longitudinal waves of approximately the same frequency is demonstrated. The analytic results agree well with the results obtained from computer simulation for a toy linear zig-zag chain model and a model of vitreous… ▽ More A theoretical analysis of the scattering of plane-wave atomic excitations in disordered solids has been made in terms of the spectral densities. Hybridization between transverse and longitudinal waves of approximately the same frequency is demonstrated. The analytic results agree well with the results obtained from computer simulation for a toy linear zig-zag chain model and a model of vitreous silica constructed by molecular dynamics. △ Less

Submitted 16 July, 1999; originally announced July 1999.

Comments: 20 pages, 8 figures, Proceedings of the summer school (Cargese, 1999): Physics of Glasses: Structure and Dynamics, Eds P. Jund and R. Jullien