-
Cathodoluminescence spectroscopy of monolayer hexagonal boron nitride
Authors:
K. Shima,
T. S. Cheng,
C. J. Mellor,
P. H. Beton,
C. Elias,
P. Valvin,
B. Gil,
G. Cassabois,
S. V. Novikov,
S. F. Chichibu
Abstract:
Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, su…
▽ More
Cathodoluminescence (CL) spectroscopy is a powerful technique for studying emission properties of optoelectronic materials because CL is free from excitable bandgap limits and from ambiguous signals due to simple light scattering and resonant Raman scattering potentially involved in the photoluminescence (PL) spectra. However, direct CL measurements of atomically thin two-dimensional materials, such as transition metal dichalcogenides and hexagonal boron nitride (hBN), have been difficult due to the small excitation volume that interacts with high-energy electron beams (e-beams). Herein, distinct CL signals from a monolayer hBN, namely mBN, epitaxial film grown on a highly oriented pyrolytic graphite substrate are shown by using a home-made CL system capable of large-area and surface-sensitive excitation by an e-beam. The spatially resolved CL spectra at 13 K exhibited a predominant 5.5-eV emission band, which has been ascribed to originate from multilayered aggregates of hBN, markedly at thicker areas formed on the step edges of the substrate. Conversely, a faint peak at 6.04 eV was routinely observed from atomically flat areas. Since the energy agreed with the PL peak of 6.05 eV at 10 K that has been assigned as being due to the recombination of phonon-assisted direct excitons of mBN by Elias et al. [Nat. Commun. 10, 2639 (2019)], the CL peak at 6.04 eV is attributed to originate from the mBN epilayer. The CL results support the transition from indirect bandgap in bulk hBN to direct bandgap in mBN, in analogy with molybdenum disulfide. The results also encourage to elucidate emission properties of other low-dimensional materials with reduced excitation volumes by using the present CL configuration.
△ Less
Submitted 17 May, 2023;
originally announced May 2023.
-
Band gap measurements of monolayer h-BN and insights into carbon-related point defects
Authors:
Ricardo Javier Peña Román,
Fábio J R Costa Costa,
Alberto Zobelli,
Christine Elias,
Pierre Valvin,
Guillaume Cassabois,
Bernard Gil,
Alex Summerfield,
Tin S Cheng,
Christopher J Mellor,
Peter H Beton,
Sergei V Novikov,
Luiz F Zagonel
Abstract:
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of th…
▽ More
Being a flexible wide band gap semiconductor, hexagonal boron nitride (h-BN) has great potential for technological applications like efficient deep ultraviolet light sources, building block for two-dimensional heterostructures and room temperature single photon emitters in the ultraviolet and visible spectral range. To enable such applications, it is mandatory to reach a better understanding of the electronic and optical properties of h-BN and the impact of various structural defects. Despite the large efforts in the last years, aspects such as the electronic band gap value, the exciton binding energy and the effect of point defects remained elusive, particularly when considering a single monolayer. Here, we directly measured the density of states of a single monolayer of h-BN epitaxially grown on highly oriented pyrolytic graphite, by performing low temperature scanning tunneling microscopy (STM) and spectroscopy (STS). The observed h-BN electronic band gap on defect-free regions is $(6.8\pm0.2)$ eV. Using optical spectroscopy to obtain the h-BN optical band gap, the exciton binding energy is determined as being of $(0.7\pm0.2)$ eV. In addition, the locally excited cathodoluminescence and photoluminescence show complex spectra that are typically associated to intragap states related to carbon defects. Moreover, in some regions of the monolayer h-BN we identify, using STM, point defects which have intragap electronic levels around 2.0 eV below the Fermi level.
△ Less
Submitted 16 July, 2021;
originally announced July 2021.
-
Spontaneous emission of color centers at 4eV in hexagonal boron nitride under hydrostatic pressure
Authors:
Kamil Koronski,
Agata Kaminska,
Nikolai D. Zhigadlo,
Christine Elias,
Guillaume Cassabois,
Bernard Gil
Abstract:
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of level…
▽ More
The light emission properties of color centers emitting in 3.3-4 eV region are investigated for hydrostatic pressures ranging up to 5GPa at liquid helium temperature. The light emission energy decreases with pressure less sensitively than the bandgap. This behavior at variance from the shift of the bandgap is typical of deep traps. Interestingly, hydrostatic pressure reveals the existence of levels that vary differently under pressure (smaller increase of the emission wavelength compared to the rest of the levels in this energy region or even decrease of it) with pressure. This discovery enriches the physics of the color centers operating in the UV in hBN.
△ Less
Submitted 20 May, 2019;
originally announced May 2019.
-
Hierarchy of Hofstadter states and replica quantum Hall ferromagnetism in graphene superlattices
Authors:
G. L. Yu,
R. V. Gorbachev,
J. S. Tu,
A. V. Kretinin,
Y. Cao,
R. Jalil,
F. Withers,
L. A. Ponomarenko,
B. A. Piot,
M. Potemski,
D. C. Elias,
X. Chen,
K. Watanabe,
T. Taniguchi,
I. V. Grigorieva,
K. S. Novoselov,
V. I. Fal'ko,
A. K. Geim,
A. Mishchenko
Abstract:
Self-similarity and fractals have fascinated researchers across various disciplines. In graphene placed on boron nitride and subjected to a magnetic field, self-similarity appears in the form of numerous replicas of the original Dirac spectrum, and their quantization gives rise to a fractal pattern of Landau levels, referred to as the Hofstadter butterfly. Here we employ capacitance spectroscopy t…
▽ More
Self-similarity and fractals have fascinated researchers across various disciplines. In graphene placed on boron nitride and subjected to a magnetic field, self-similarity appears in the form of numerous replicas of the original Dirac spectrum, and their quantization gives rise to a fractal pattern of Landau levels, referred to as the Hofstadter butterfly. Here we employ capacitance spectroscopy to probe directly the density of states (DoS) and energy gaps in this spectrum. Without a magnetic field, replica spectra are seen as pronounced DoS minima surrounded by van Hove singularities. The Hofstadter butterfly shows up as recurring Landau fan diagrams in high fields. Electron-electron interactions add another twist to the self-similar behaviour. We observe suppression of quantum Hall ferromagnetism, a reverse Stoner transition at commensurable fluxes and additional ferromagnetism within replica spectra. The strength and variety of the interaction effects indicate a large playground to study many-body physics in fractal Dirac systems.
△ Less
Submitted 2 June, 2014; v1 submitted 15 April, 2014;
originally announced April 2014.
-
Interaction phenomena in graphene seen through quantum capacitance
Authors:
G. L. Yu,
R. Jalil,
Branson Belle,
Alexander S. Mayorov,
Peter Blake,
Frederick Schedin,
Sergey V. Morozov,
Leonid A. Ponomarenko,
F. Chiappini,
S. Wiedmann,
Uli Zeitler,
Mikhail I. Katsnelson,
A. K. Geim,
Kostya S. Novoselov,
Daniel C. Elias
Abstract:
Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the l…
▽ More
Capacitance measurements provide a powerful means of probing the density of states. The technique has proved particularly successful in studying 2D electron systems, revealing a number of interesting many-body effects. Here, we use large-area high-quality graphene capacitors to study behavior of the density of states in this material in zero and high magnetic fields. Clear renormalization of the linear spectrum due to electron-electron interactions is observed in zero field. Quantizing fields lead to splitting of the spin- and valley-degenerate Landau levels into quartets separated by interaction-enhanced energy gaps. These many-body states exhibit negative compressibility but the compressibility returns to positive in ultrahigh B. The reentrant behavior is attributed to a competition between field-enhanced interactions and nascent fractional states.
△ Less
Submitted 16 February, 2013;
originally announced February 2013.
-
Cloning of Dirac fermions in graphene superlattices
Authors:
L. A. Ponomarenko,
R. V. Gorbachev,
G. L. Yu,
D. C. Elias,
R. Jalil,
A. A. Patel,
A. Mishchenko,
A. S. Mayorov,
C. R. Woods,
J. R. Wallbank,
M. Mucha-Kruczynski,
B. A. Piot,
M. Potemski,
I. V. Grigorieva,
K. S. Novoselov,
F. Guinea,
V. I. Fal'ko,
A. K. Geim
Abstract:
Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron o…
▽ More
Lateral superlattices have attracted major interest as this may allow one to modify spectra of two dimensional electron systems and, ultimately, create materials with tailored electronic properties. Previously, it proved difficult to realize superlattices with sufficiently short periodicity and weak disorder, and most of the observed features could be explained in terms of commensurate cyclotron orbits. Evidence for the formation of superlattice minibands (so called Hofstadter's butterfly) has been limited to the observation of new low-field oscillations and an internal structure within Landau levels. Here we report transport properties of graphene placed on a boron nitride substrate and accurately aligned along its crystallographic directions. The substrate's moire potential leads to profound changes in graphene's electronic spectrum. Second-generation Dirac points appear as pronounced peaks in resistivity accompanied by reversal of the Hall effect. The latter indicates that the sign of the effective mass changes within graphene's conduction and valence bands. Quantizing magnetic fields lead to Zak-type cloning of the third generation of Dirac points that are observed as numerous neutrality points in fields where a unit fraction of the flux quantum pierces the superlattice unit cell. Graphene superlattices open a venue to study the rich physics expected for incommensurable quantum systems and illustrate the possibility to controllably modify electronic spectra of 2D atomic crystals by using their crystallographic alignment within van der Waals heterostuctures.
△ Less
Submitted 9 May, 2013; v1 submitted 20 December, 2012;
originally announced December 2012.
-
Cross-sectional imaging of individual layers and buried interfaces of graphene-based heterostructures and superlattices
Authors:
S. J. Haigh,
A. Gholinia,
R. Jalil,
S. Romani,
L. Britnell,
D. C. Elias,
K. S. Novoselov,
L. A. Ponomarenko,
A. K. Geim,
R. Gorbachev
Abstract:
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by v…
▽ More
By stacking various two-dimensional (2D) atomic crystals [1] on top of each other, it is possible to create multilayer heterostructures and devices with designed electronic properties [2-5]. However, various adsorbates become trapped between layers during their assembly, and this not only affects the resulting quality but also prevents the formation of a true artificial layered crystal upheld by van der Waals interaction, creating instead a laminate glued together by contamination. Transmission electron microscopy (TEM) has shown that graphene and boron nitride monolayers, the two best characterized 2D crystals, are densely covered with hydrocarbons (even after thermal annealing in high vacuum) and exhibit only small clean patches suitable for atomic resolution imaging [6-10]. This observation seems detrimental for any realistic prospect of creating van der Waals materials and heterostructures with atomically sharp interfaces. Here we employ cross sectional TEM to take a side view of several graphene-boron nitride heterostructures. We find that the trapped hydrocarbons segregate into isolated pockets, leaving the interfaces atomically clean. Moreover, we observe a clear correlation between interface roughness and the electronic quality of encapsulated graphene. This work proves the concept of heterostructures assembled with atomic layer precision and provides their first TEM images.
△ Less
Submitted 4 September, 2012; v1 submitted 28 June, 2012;
originally announced June 2012.
-
How close can one approach the Dirac point in graphene experimentally?
Authors:
Alexander S. Mayorov,
Daniel C. Elias,
Ivan S. Mukhin,
Sergey V. Morozov,
Leonid A. Ponomarenko,
Kostya S. Novoselov,
A. K. Geim,
Roman V. Gorbachev
Abstract:
The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogene…
▽ More
The above question is frequently asked by theorists who are interested in graphene as a model system, especially in context of relativistic quantum physics. We offer an experimental answer by describing electron transport in suspended devices with carrier mobilities of several 10^6 cm^2V^-1s^-1 and with the onset of Landau quantization occurring in fields below 5 mT. The observed charge inhomogeneity is as low as \approx10^8 cm^-2, allowing a neutral state with a few charge carriers per entire micron-scale device. Above liquid helium temperatures, the electronic properties of such devices are intrinsic, being governed by thermal excitations only. This yields that the Dirac point can be approached within 1 meV, a limit currently set by the remaining charge inhomogeneity. No sign of an insulating state is observed down to 1 K, which establishes the upper limit on a possible bandgap.
△ Less
Submitted 3 September, 2012; v1 submitted 18 June, 2012;
originally announced June 2012.
-
Interaction-Driven Spectrum Reconstruction in Bilayer Graphene
Authors:
A. S. Mayorov,
D. C. Elias,
M. Mucha-Kruczynski,
R. V. Gorbachev,
T. Tudorovskiy,
A. Zhukov,
S. V. Morozov,
M. I. Katsnelson,
V. I. Fal'ko,
A. K. Geim,
K. S. Novoselov
Abstract:
The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples a…
▽ More
The nematic phase transition in electronic liquids, driven by Coulomb interactions, represents a new class of strongly correlated electronic ground states. We studied suspended samples of bilayer graphene, annealed so that it achieves very high quasiparticle mobilities. Bilayer graphene is a truly two-dimensional material with complex chiral electronic spectra and the high quality of our samples allowed us to observe strong spectrum reconstructions and electron topological transitions that can be attributed to a nematic phase transition and a decrease in rotational symmetry. These results are especially surprising because no interaction effects have been observed so far in bilayer graphene in the absence of an applied magnetic field.
△ Less
Submitted 8 August, 2011;
originally announced August 2011.
-
Dirac cones reshaped by interaction effects in suspended graphene
Authors:
D. C. Elias,
R. V. Gorbachev,
A. S. Mayorov,
S. V. Morozov,
A. A. Zhukov,
P. Blake,
L. A. Ponomarenko,
I. V. Grigorieva,
K. S. Novoselov,
F. Guinea,
A. K. Geim
Abstract:
We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attri…
▽ More
We report measurements of the cyclotron mass in graphene for carrier concentrations n varying over three orders of magnitude. In contrast to the single-particle picture, the real spectrum of graphene is profoundly nonlinear so that the Fermi velocity describing the spectral slope reaches ~3x10^6 m/s at n <10^10 cm^-2, three times the value commonly used for graphene. The observed changes are attributed to electron-electron interaction that renormalizes the Dirac spectrum because of weak screening. Our experiments also put an upper limit of ~0.1 meV on the possible gap in graphene.
△ Less
Submitted 3 September, 2011; v1 submitted 7 April, 2011;
originally announced April 2011.
-
Limits on electron quality in suspended graphene due to flexural phonons
Authors:
E. V. Castro,
H. Ochoa,
M. I. Katsnelson,
R. V. Gorbachev,
D. C. Elias,
K. S. Novoselov,
A. K. Geim,
F. Guinea
Abstract:
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases quadratically with $T$. Flexural phonons limit the intrinsic mobility down to a few $\text{m}^2/\text{Vs}$ at room $T$. Their effect can be eliminated by applying strain…
▽ More
The temperature dependence of the mobility in suspended graphene samples is investigated. In clean samples, flexural phonons become the leading scattering mechanism at temperature $T \gtrsim 10\,\,$K, and the resistivity increases quadratically with $T$. Flexural phonons limit the intrinsic mobility down to a few $\text{m}^2/\text{Vs}$ at room $T$. Their effect can be eliminated by applying strain or placing graphene on a substrate.
△ Less
Submitted 15 August, 2010;
originally announced August 2010.
-
Control of graphene's properties by reversible hydrogenation
Authors:
D. C. Elias,
R. R. Nair,
T. M. G. Mohiuddin,
S. V. Morozov,
P. Blake,
M. P. Halsall,
A. C. Ferrari,
D. W. Boukhvalov,
M. I. Katsnelson,
A. K. Geim,
K. S. Novoselov
Abstract:
Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without destroying it. This notion of graphene as a giant flat molecule that can be altered chemically is supported by the observation of so-called graphene oxide, that…
▽ More
Graphene - a monolayer of carbon atoms densely packed into a hexagonal lattice - has one of the strongest possible atomic bonds and can be viewed as a robust atomic-scale scaffold, to which other chemical species can be attached without destroying it. This notion of graphene as a giant flat molecule that can be altered chemically is supported by the observation of so-called graphene oxide, that is graphene densely covered with hydroxyl and other groups. Unfortunately, graphene oxide is strongly disordered, poorly conductive and difficult to reduce to the original state. Nevertheless, one can imagine atoms or molecules being attached to the atomic scaffold in a strictly periodic manner, which should result in a different electronic structure and, essentially, a different crystalline material. A hypothetical example for this is graphane, a wide-gap semiconductor, in which hydrogen is bonded to each carbon site of graphene. Here we show that by exposing graphene to atomic hydrogen, it is possible to transform this highly-conductive semimetal into an insulator. Transmission electron microscopy reveals that the material retains the hexagonal lattice but its period becomes markedly shorter than that of graphene, providing direct evidence for a new graphene-based derivative. The reaction with hydrogen is found to be reversible so that the original metallic state and lattice spacing are restored by annealing and even the quantum Hall effect recovers. Our work proves the concept of chemical modification of graphene, which promises a whole range of new two-dimensional crystals with designed electronic and other properties.
△ Less
Submitted 26 October, 2008;
originally announced October 2008.
-
Observation of Distinct Electron-Phonon Couplings in Gated Bilayer Graphene
Authors:
L. M. Malard,
D. C. Elias,
E. S. Alves,
M. A. Pimenta
Abstract:
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry…
▽ More
A Raman study of a back gated bilayer graphene sample is presented. The changes in the Fermi level induced by charge transfer splits the Raman G-band, hardening its higher component and softening the lower one. These two components are associated with the symmetric (S) and anti-symmetric vibration (AS) of the atoms in the two layers, the later one becoming Raman active due to inversion symmetry breaking. The phonon hardening and softening are explained by considering the selective coupling of the S and AS phonons with interband and intraband electron-hole pairs.
△ Less
Submitted 18 August, 2008;
originally announced August 2008.
-
Giant Intrinsic Carrier Mobilities in Graphene and Its Bilayer
Authors:
S. V. Morozov,
K. S. Novoselov,
M. I. Katsnelson,
F. Schedin,
D. C. Elias,
J. A. Jaszczak,
A. K. Geim
Abstract:
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like…
▽ More
We have studied temperature dependences of electron transport in graphene and its bilayer and found extremely low electron-phonon scattering rates that set the fundamental limit on possible charge carrier mobilities at room temperature. Our measurements have shown that mobilities significantly higher than 200,000 cm2/Vs are achievable, if extrinsic disorder is eliminated. A sharp (threshold-like) increase in resistivity observed above approximately 200K is unexpected but can qualitatively be understood within a model of a rippled graphene sheet in which scattering occurs on intra-ripple flexural phonons.
△ Less
Submitted 7 January, 2008; v1 submitted 28 October, 2007;
originally announced October 2007.
-
Probing the Electronic Structure of Bilayer Graphene by Raman Scattering
Authors:
L. M. Malard,
J. Nilsson,
D. C. Elias,
J. C. Brant,
F. Plentz,
E. S. Alves,
A. H. Castro Neto,
M. A. Pimenta
Abstract:
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of ele…
▽ More
The electronic structure of bilayer graphene is investigated from a resonant Raman study using different laser excitation energies. The values of the parameters of the Slonczewski-Weiss-McClure model for graphite are measured experimentally and some of them differ significantly from those reported previously for graphite, specially that associated with the difference of the effective mass of electrons and holes. The splitting of the two TO phonon branches in bilayer graphene is also obtained from the experimental data. Our results have implications for bilayer graphene electronic devices.
△ Less
Submitted 9 August, 2007;
originally announced August 2007.
