-
Monolayer Vanadium-doped Tungsten Disulfide: A Room-Temperature Dilute Magnetic Semiconductor
Authors:
Fu Zhang,
Boyang Zheng,
Amritanand Sebastian,
Hans Olson,
Mingzu Liu,
Kazunori Fujisawa,
Yen Thi Hai Pham,
Valery Ortiz Jimenez,
Vijaysankar Kalappattil,
Leixin Miao,
Tianyi Zhang,
Rahul Pendurthi,
Yu Lei,
Ana Laura Elías,
Yuanxi Wang,
Nasim Alem,
Patrick E. Hopkins,
Saptarshi Das,
Vincent H. Crespi,
Manh-Huong Phan,
Mauricio Terrones
Abstract:
Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley…
▽ More
Dilute magnetic semiconductors, achieved through substitutional doping of spin-polarized transition metals into semiconducting systems, enable experimental modulation of spin dynamics in ways that hold great promise for novel magneto-electric or magneto-optical devices, especially for two-dimensional systems such as transition metal dichalcogenides that accentuate interactions and activate valley degrees of freedom. Practical applications of 2D magnetism will likely require room-temperature operation, air stability, and (for magnetic semiconductors) the ability to achieve optimal doping levels without dopant aggregation. Here we describe room-temperature ferromagnetic order obtained in semiconducting vanadium-doped tungsten disulfide monolayers produced by a reliable single-step film sulfidation method across an exceptionally wide range of vanadium concentrations, up to 12 at% with minimal dopant aggregation. These monolayers develop p-type transport as a function of vanadium incorporation and rapidly reach ambipolarity. Ferromagnetism peaks at an intermediate vanadium concentration of a few atomic percent and decreases for higher concentrations, which is consistent with quenching due to orbital hybridization at closer vanadium-vanadium spacings, as supported by transmission electron microscopy, magnetometry and first-principles calculations. Room-temperature two-dimensional dilute magnetic semiconductors provide a new component to expand the functional scope of van der Waals heterostructures and bring semiconducting magnetic 2D heterostructures them into the realm of practical application.
△ Less
Submitted 5 May, 2020;
originally announced May 2020.
-
Unique excitonic effects in tungsten disulphide monolayers on two-layer graphene
Authors:
Cristina E. Giusca,
Ivan Rungger,
Vishal Panchal,
Christos Melios,
Zhong Lin,
Yu-Chuan Lin,
Ethan Kahn,
Ana Laura Elías,
Joshua A. Robinson,
Mauricio Terrones,
Olga Kazakova
Abstract:
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two…
▽ More
Light emission in atomically thin heterostructures is known to depend on the type of materials, number and stacking sequence of the constituent layers. Here we show that the thickness of a two-dimensional substrate can be crucial in modulating the light emission. We study the layer-dependent charge transfer in vertical heterostructures built from monolayer tungsten disulphide (WS2) on one- and two-layer epitaxial graphene, unravelling the effect that the interlayer electronic coupling has on the excitonic properties of such heterostructures. We bring evidence that the excitonic properties of WS2 can be effectively tuned by the number of supporting graphene layers. Integrating WS2 monolayers with two-layer graphene leads to a significant enhancement of the photoluminescence response, up to one order of magnitude higher compared to WS2 supported on one-layer graphene. Our findings highlight the importance of substrate engineering when constructing atomically thin layered heterostructures.
△ Less
Submitted 27 April, 2018;
originally announced April 2018.
-
Low temperature synthesis of heterostructures of transition metal dichalcogenide alloys (WxMo1-xS2) and graphene with superior catalytic performance for hydrogen evolution
Authors:
Yu Lei,
Srimanta Pakhira,
Kazunori Fujisawa,
Xuyang Wang,
Oluwagbenga Oare Iyiola,
Nestor Perea Lopez,
Ana Laura Elias,
Lakshmy Pulickal Rajukumar,
Chanjing Zhou,
Bernd Kabius,
Nasim Alem,
Morinobu Endo,
Ruitao Lv,
Jose L. Mendoza-Cortes,
Mauricio Terrones
Abstract:
Large-area ($\sim$cm$^2$) films of vertical heterostructures formed by alternating graphene and transition-metal dichalcogenide(TMD) alloys are obtained by wet chemical routes followed by a thermal treatment at low temperature (300 $^\circ$C). In particular, we synthesized stacked graphene and W$_x$Mo$_{1-x}$S$_2$ alloy phases that were used as hydrogen evolution catalysts. We observed a Tafel slo…
▽ More
Large-area ($\sim$cm$^2$) films of vertical heterostructures formed by alternating graphene and transition-metal dichalcogenide(TMD) alloys are obtained by wet chemical routes followed by a thermal treatment at low temperature (300 $^\circ$C). In particular, we synthesized stacked graphene and W$_x$Mo$_{1-x}$S$_2$ alloy phases that were used as hydrogen evolution catalysts. We observed a Tafel slope of 38.7 mV dec$^{-1}$ and 96 mV onset potential (at current density of 10 mA cm$^{-2}$) when the heterostructure alloy is annealed at 300 $^o$C. These results indicate that heterostructure formed by graphene and W$_{0.4}$Mo$_{0.6}$S$_2$ alloys are far more efficient than WS$_2$ and MoS$_2$ by at least a factor of two, and it is superior than any other reported TMD system. This strategy offers a cheap and low temperature synthesis alternative able to replace Pt in the hydrogen evolution reaction (HER). Furthermore, the catalytic activity of the alloy is stable over time, i.e. the catalytic activity does not experience a significant change even after 1000 cycles. Using density functional theory calculations, we found that this enhanced hydrogen evolution in the W$_x$Mo$_{1-x}$S$_2$ alloys is mainly due to the lower energy barrier created by a favorable overlap of the d-orbitals from the transition metals and the s-orbitals of H$_2$, with the lowest energy barrier occurring for W$_{0.4}$Mo$_{0.6}$S$_2$ alloy. Thus, it is now possible to further improve the performance of the "inert" TMD basal plane via metal alloying, in addition to the previously reported strategies of creation of point defects, vacancies and edges. The synthesis of graphene/W$_{0.4}$Mo$_{0.6}$S$_2$ produced at relatively low temperatures is scalable and could be used as an effective low cost Pt-free catalyst.
△ Less
Submitted 5 May, 2017; v1 submitted 24 March, 2017;
originally announced March 2017.
-
Hall and field-effect mobilities in few layered $p$-WSe$_2$ field-effect transistors
Authors:
N. R. Pradhan,
D. Rhodes,
S. Memaran,
J. M. Poumirol,
D. Smirnov,
S. Talapatra,
S. Feng,
N. Perea-Lopez,
A. L. Elias,
M. Terrones,
P. M. Ajayan,
L. Balicas
Abstract:
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/V…
▽ More
Here, we present a temperature ($T$) dependent comparison between field-effect and Hall mobilities in field-effect transistors based on few-layered WSe$_2$ exfoliated onto SiO$_2$. Without dielectric engineering and beyond a $T$-dependent threshold gate-voltage, we observe maximum hole mobilities approaching 350 cm$^2$/Vs at $T$=300 K. The hole Hall mobility reaches a maximum value of 650 cm$^2$/Vs as $T$ is lowered below $\sim$ 150 K, indicating that insofar WSe$_2$-based field-effect transistors (FETs) display the largest Hall mobilities among the transition metal dichalcogenides. The gate capacitance, as extracted from the Hall-effect, reveals the presence of spurious charges in the channel, while the two-terminal sheet resistivity displays two-dimensional variable-range hopping behavior, indicating carrier localization induced by disorder at the interface between WSe$_2$ and SiO$_2$. We argue that improvements in the fabrication protocols as, for example, the use of a substrate free of dangling bonds are likely to produce WSe$_2$-based FETs displaying higher room temperature mobilities, i.e. approaching those of $p$-doped Si, which would make it a suitable candidate for high performance opto-electronics.
△ Less
Submitted 1 February, 2015;
originally announced February 2015.
-
Extraordinary room-temperature photoluminescence in WS2 monolayers
Authors:
Humberto R. Gutiérrez,
Nestor Perea-López,
Ana Laura Elías,
Ayse Berkdemir,
Bei Wang,
Ruitao Lv,
Florentino López-Urías,
Vincent H. Crespi,
Humberto Terrones,
Mauricio Terrones
Abstract:
Individual monolayers of metal dichalcogenides are atomically thin two-dimensional crystals with attractive physical properties different from their bulk layered counterpart. Here we describe the direct synthesis of WS2 monolayers with triangular morphologies and strong room-temperature photoluminescence (PL). Bulk WS2 does not present PL due to its indirect band gap nature. The edges of these mon…
▽ More
Individual monolayers of metal dichalcogenides are atomically thin two-dimensional crystals with attractive physical properties different from their bulk layered counterpart. Here we describe the direct synthesis of WS2 monolayers with triangular morphologies and strong room-temperature photoluminescence (PL). Bulk WS2 does not present PL due to its indirect band gap nature. The edges of these monolayers exhibit PL signals with extraordinary intensity, around 25 times stronger than the platelets center. The structure and composition of the platelet edges appear to be critical for the PL enhancement effect. Electron diffraction revealed that platelets present zigzag edges, while first-principles calculations indicate that sulfur-rich zigzag WS2 edges possess metallic edge states, which might tailor the optical response reported here. These novel 2D nanoscale light sources could find diverse applications including the fabrication of flexible/transparent/low-energy optoelectronic devices.
△ Less
Submitted 6 August, 2012;
originally announced August 2012.
