Showing 1–2 of 2 results for author: Elert, M L

Shear Stresses in Shock-Compressed Covalent Solids

Authors: I. I. Oleynik, S. V. Zybin, M. L. Elert, C. T. White

Abstract: Shear stresses are the driving forces for the creation of both point and extended defects in crystals subjected to high pressures and temperatures. Recently, we observed anomalous elastic materials response in shock-compressed silicon and diamond in the course of our MD simulations and were able to relate this phenomenon to non-monotonic dependence of shear stress on uniaxial compression of the… ▽ More Shear stresses are the driving forces for the creation of both point and extended defects in crystals subjected to high pressures and temperatures. Recently, we observed anomalous elastic materials response in shock-compressed silicon and diamond in the course of our MD simulations and were able to relate this phenomenon to non-monotonic dependence of shear stress on uniaxial compression of the material. Here we report results of combined density functional theory (DFT) and classical interatomic potentials studies of shear stresses in shock compressed covalent solids such as diamond and silicon for three low-index crystallographic directions, <100>, <110>, <111>. We observed a non-monotonic dependence of DFT shear stresses for all three crystallographic directions which indicates that anomalous elastic response of shock compressed material is a real phenomenon and not an artifact of interatomic potentials used in MD simulations. △ Less

Submitted 1 November, 2005; originally announced November 2005.

Nanoscale Molecular Dynamics Simulaton of Shock Compression of Silicon

Authors: I. I. Oleynik, S. V. Zybin, M. L. Elert, C. T. White

Abstract: We report results of molecular dynamics simulation of shock wave propagation in silicon in [100], [110], and [111] directions obtained using a classical environment-dependent interatomic potential (EDIP). Several regimes of materials response are classified as a function of shock wave intensity using the calculated shock Hugoniot. Shock wave structure in [100] and [111] directions exhibit usual… ▽ More We report results of molecular dynamics simulation of shock wave propagation in silicon in [100], [110], and [111] directions obtained using a classical environment-dependent interatomic potential (EDIP). Several regimes of materials response are classified as a function of shock wave intensity using the calculated shock Hugoniot. Shock wave structure in [100] and [111] directions exhibit usual evolution as a function of piston velocity. At piston velocities km/s the shock wave consists of a fast elastic precursor followed by a slower plastic front. At larger piston velocities the single overdriven plastic wave propagates through the crystal causing amorphitization of Si. However, the [110] shock wave exhibits an anomalous materials response at intermediate piston velocities around km/s which is characterized by the absence of plastic deformations. △ Less

Submitted 1 November, 2005; originally announced November 2005.