Showing 1–1 of 1 results for author: Eisenbeiser, K

High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates

Authors: B. M. Kim, T. Brintlinger, E. Cobas, Haimei Zheng, M. S. Fuhrer, Z. Yu, R. Droopad, J. Ramdani, K. Eisenbeiser

Abstract: Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increas… ▽ More Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier. △ Less

Submitted 28 January, 2004; originally announced January 2004.

Comments: 13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett

Journal ref: Applied Physics Letters 84, 1946 (2004)