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Thickness characterization of atomically-thin WSe$_2$ on epitaxial graphene by low-energy electron reflectivity oscillations
Authors:
Sergio C. de la Barrera,
Yu-Chuan Lin,
Sarah M. Eichfeld,
Joshua A. Robinson,
Qin Gao,
Michael Widom,
Randall M. Feenstra
Abstract:
In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the mon…
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In this work, low-energy electron microscopy is employed to probe structural as well as electronic information in few-layer WSe$_2$ on epitaxial graphene on SiC. The emergence of unoccupied states in the WSe$_2$--graphene heterostructures are studied using spectroscopic low-energy electron reflectivity. Reflectivity minima corresponding to specific WSe$_2$ states that are localized between the monolayers of each vertical heterostructure are shown to reveal the number of layers for each point on the surface. A theory for the origin of these states is developed and utilized to explain the experimentally observed featured in the WSe$_2$ electron reflectivity.
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Submitted 13 June, 2016;
originally announced June 2016.
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Graphene stabilization of two-dimensional gallium nitride
Authors:
Zakaria Y. Al Balushi,
Ke Wang,
Ram Krishna Ghosh,
Rafael A. Vilá,
Sarah M. Eichfeld,
Paul A. DeSario,
Dennis F. Paul,
Joshua D. Caldwell,
Suman Datta,
Joan M. Redwing,
Joshua A. Robinson
Abstract:
The spectrum of two-dimensional (2D) materials beyond graphene offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy (~5.0-6.0 eV), has clearly established that 2D nitrides are key to advancing novel devices1. A gap, however, remains between the theoretical prediction of 2D nitride…
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The spectrum of two-dimensional (2D) materials beyond graphene offers a remarkable platform to study new phenomena in condensed matter physics. Among these materials, layered hexagonal boron nitride (hBN), with its wide bandgap energy (~5.0-6.0 eV), has clearly established that 2D nitrides are key to advancing novel devices1. A gap, however, remains between the theoretical prediction of 2D nitrides beyond hBN and experimental realization of such structures. Here we demonstrate the synthesis of 2D gallium nitride (GaN) via a novel migration-enhanced encapsulated growth (MEEG) technique utilizing epitaxial graphene. We theoretically predict and experimentally validate that the atomic structure of 2D GaN grown via MEEG is notably different from reported theory. Moreover, we establish that graphene plays a critical role in stabilizing the direct-bandgap (nearly 5.0 eV), 2D buckled structure. Our results provide a foundation for discovery and stabilization of novel 2D nitrides that are difficult to prepare via traditional synthesis.
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Submitted 12 May, 2016; v1 submitted 5 November, 2015;
originally announced November 2015.
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Atomically Thin Resonant Tunnel Diodes built from Synthetic van der Waals Heterostructures
Authors:
Yu-Chuan Lin,
Ram Krishna Ghosh,
Rafik Addou,
Ning Lu,
Sarah M. Eichfeld,
Hui Zhu,
Ming-Yang Li,
Xin Peng,
Moon J. Kim,
Lain-Jong Li,
Robert M. Wallace,
Suman Datta,
Joshua A. Robinson
Abstract:
Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphe…
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Vertical integration of two-dimensional van der Waals materials is predicted to lead to novel electronic and optical properties not found in the constituent layers. Here, we present the direct synthesis of two unique, atomically thin, multi-junction heterostructures by combining graphene with the monolayer transition-metal dichalocogenides: MoS2, MoSe2, and WSe2.The realization of MoS2-WSe2-Graphene and WSe2-MoSe2-Graphene heterostructures leads toresonant tunneling in an atomically thin stack with spectrally narrow room temperature negative differential resistance characteristics.
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Submitted 18 March, 2015;
originally announced March 2015.
