Revisiting the origin of satellites in core level photoemission of transparent conducting oxides: the case of $n$-doped SnO$_2$
Authors:
F. Borgatti,
J. A. Berger,
D. Céolin,
J. S. Zhou,
J. J. Kas,
M. Guzzo,
C. F. McConville,
F. Offi,
G. Panaccione,
A. Regoutz,
D. J. Payne,
J. -P. Rueff,
O. Bierwagen,
M. E. White,
J. S. Speck,
M. Gatti,
R. G. Egdell
Abstract:
The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by co…
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The longstanding problem of interpretation of satellite structures in core level photoemission spectra of metallic systems with a low density of conduction electrons is addressed using the specific example of Sb-doped SnO$_2$. Comparison of {\it ab initio} many-body calculations with experimental hard X-ray photoemission spectra of the Sn 4$d$ states shows that strong satellites are produced by coupling of the Sn core hole to the plasma oscillations of the free electrons introduced by doping. Within the same theoretical framework, spectral changes of the valence band spectra are also related to dynamical screening effects. These results demonstrate that, for the interpretation of electron correlation features in the core level photoelectron spectra of such narrow-band materials, going beyond the homogeneous electron gas electron-plasmon coupling model is essential.
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Submitted 24 October, 2017;
originally announced October 2017.
Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping
Authors:
Ivana Vobornik,
Giancarlo Panaccione,
Jun Fujii,
Zhi-Huai Zhu,
Francesco Offi,
Benjamin R. Salles,
Francesco Borgatti,
Piero Torelli,
Jean Pascal Rueff,
Denis Ceolin,
Alberto Artioli,
Manju Unnikrishnan,
Giorgio Levy,
Massimiliano Marangolo,
Mamhoud Eddrief,
Damjan Krizmancic,
Huiwen Ji,
Andrea Damascelli,
Gerrit van der Laan,
Russell G. Egdell,
Robert J. Cava
Abstract:
The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide spectroscopic evidence for the presence of distinct chemical and electronic behavior for surface and bulk magnetic doping of Bi2Te3. The inclusion of Mn in the b…
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The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide spectroscopic evidence for the presence of distinct chemical and electronic behavior for surface and bulk magnetic doping of Bi2Te3. The inclusion of Mn in the bulk of Bi2Te3 induces a genuine dilute ferromagnetic state, with reduction of the bulk band gap as the Mn content is increased. Deposition of Fe on the Bi2Te3 surface, on the other hand, favors the formation of iron telluride already at coverages as low as 0.07 monolayer, as a consequence of the reactivity of the Te-rich surface. Our results identify the factors that need to be controlled in the realization of magnetic nanosystems and interfaces based on TIs.
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Submitted 13 August, 2014;
originally announced August 2014.