All-passive upconversion of incoherent near-infrared light at intensities down to 10$^{-7}$ W/cm$^2$
Authors:
Rabeeya Hamid,
Demeng Feng,
Pournima Narayanan,
Justin S. Edwards,
Manchen Hu,
Emma Belliveau,
Minjeong Kim,
Sanket Deshpande,
Chenghao Wan,
Linda Pucurimay,
David A. Czaplewski,
Daniel N. Congreve,
Mikhail A. Kats
Abstract:
Frequency upconversion, which converts low-energy photons into higher-energy ones, typically requires intense coherent illumination to drive nonlinear processes or the use of externally driven optoelectronic devices. Here, we demonstrate an upconversion system that converts low-intensity (down to ~10-7 W/cm$^2$) incoherent near-infrared (NIR) light into the visible, reaching intensities perceptibl…
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Frequency upconversion, which converts low-energy photons into higher-energy ones, typically requires intense coherent illumination to drive nonlinear processes or the use of externally driven optoelectronic devices. Here, we demonstrate an upconversion system that converts low-intensity (down to ~10-7 W/cm$^2$) incoherent near-infrared (NIR) light into the visible, reaching intensities perceptible by the human eye, without the use of any external power input. Our upconverting element is enabled by the following ingredients: (1) photon upconversion via triplet-triplet annihilation in a bulk heterojunction of the organic semiconductors Y6 and rubrene; (2) plasmonic enhancement of absorption and field intensity in the heterojunction layer; (3) collection enhancement using a dichroic thin-film assembly. To enable high-resolution imaging, the upconverting element is inserted at an intermediate image plane of a dual-wavelength telescope system, which preserves the relative directionality of rays between the incident NIR light and output visible light. Our all-passive upconversion imaging system will enable NIR imaging and sensing in low-light environments under energy constraints.
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Submitted 21 March, 2025; v1 submitted 27 November, 2024;
originally announced November 2024.
Control of threshold voltages in Si/SiGe quantum devices via optical illumination
Authors:
M. A. Wolfe,
Brighton X. Coe,
Justin S. Edwards,
Tyler J. Kovach,
Thomas McJunkin,
Benjamin Harpt,
D. E. Savage,
M. G. Lagally,
R. McDermott,
Mark Friesen,
Shimon Kolkowitz,
M. A. Eriksson
Abstract:
Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate v…
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Optical illumination of quantum-dot qubit devices at cryogenic temperatures, while not well studied, is often used to recover operating conditions after undesired shocking events or charge injection. Here, we demonstrate systematic threshold voltage shifts in a dopant-free, Si/SiGe field effect transistor using a near infrared (780 nm) laser diode. We find that illumination under an applied gate voltage can be used to set a specific, stable, and reproducible threshold voltage that, over a wide range in gate bias, is equal to that gate bias. Outside this range, the threshold voltage can still be tuned, although the resulting threshold voltage is no longer equal to the applied gate bias during illumination. We present a simple and intuitive model that provides a mechanism for the tunability in gate bias. The model presented also explains why cryogenic illumination is successful at resetting quantum dot qubit devices after undesired charging events.
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Submitted 20 June, 2024; v1 submitted 21 December, 2023;
originally announced December 2023.
