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Nonreciprocal Spin-Wave Propagation in Anisotropy-Graded Iron Films Prepared by Nitrogen Implantation
Authors:
L. Christienne,
J. Jiménez-Bustamante,
P. Rovillain,
Mahmoud Eddrief,
Yunlin Zheng,
Franck Fortuna,
Massimiliano Marangolo,
M. Madami,
R. A. Gallardo,
P. Landeros,
S. Tacchi
Abstract:
Gradual modification of the magnetic properties in ferromagnetic films has recently been proposed as an effective method to channel and control spin waves for the development of new functionalities in magnonic devices. Here, we investigate graded FeN films prepared by low-dose nitrogen implantation of Fe epitaxial thin films. Combining Brillouin light scattering measurements and a spin-wave theore…
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Gradual modification of the magnetic properties in ferromagnetic films has recently been proposed as an effective method to channel and control spin waves for the development of new functionalities in magnonic devices. Here, we investigate graded FeN films prepared by low-dose nitrogen implantation of Fe epitaxial thin films. Combining Brillouin light scattering measurements and a spin-wave theoretical approach, we show that nitrogen implantation induces a graded profile of both the in-plane and the perpendicular anisotropies along the film thickness. This graduation leads to a significant modification of the spin-wave spatial localization and generates a marked frequency asymmetry in the spin-wave dispersion. Moreover, we find that the anisotropy profile, and as a consequence the dispersion relation, can be tuned on changing the implantation dose, opening a way for the potential use of the graded Fe-N films in magnonic applications.
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Submitted 15 April, 2025;
originally announced April 2025.
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Mastering disorder in a first-order transition by ion irradiation
Authors:
S. Cervera,
M. LoBue,
E. Fontana,
M. Eddrief,
V. H. Etgens,
E. Lamour,
S. Macé,
M. Marangolo,
E. Plouet,
C. Prigent,
S. Steydli,
D. Vernhet,
M. Trassinelli
Abstract:
The effect of ion bombardment on MnAs single crystalline thin films is studied. The role of elastic collisions between ions and atoms of the material is singled-out as the main process responsible for modifying the properties of the material. Thermal hysteresis suppression, and the loss of sharpness of the magneto-structural phase transition are studied as a function of different irradiation condi…
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The effect of ion bombardment on MnAs single crystalline thin films is studied. The role of elastic collisions between ions and atoms of the material is singled-out as the main process responsible for modifying the properties of the material. Thermal hysteresis suppression, and the loss of sharpness of the magneto-structural phase transition are studied as a function of different irradiation conditions. While the latter is shown to be associated with the ion induced disorder at the scale of the transition correlation length, the former is related to the coupling between disorder and the large-scale elastic field associated with the phase coexistence pattern.
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Submitted 28 January, 2024; v1 submitted 25 July, 2023;
originally announced July 2023.
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Impact of Spin Wave Dispersion on Surface Acoustic Wave Velocity
Authors:
Pauline Rovillain,
Jean-Yves Duquesne,
Louis Christienne,
Mahmoud Eddrief,
Maria Gloria Pini,
Angelo Rettori,
Silvia Tacchi,
Massimiliano Marangolo
Abstract:
The dependence of the velocity of surface acoustic wave (SAW) as a function of an external applied magnetic field is investigated in a Fe thin film epitaxially grown on a piezoelectric GaAs substrate. The SAW velocity is observed to strongly depend on both the amplitude and direction of the magnetic field. To interpret the experimental data a phenomenological approach to the relative change in SAW…
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The dependence of the velocity of surface acoustic wave (SAW) as a function of an external applied magnetic field is investigated in a Fe thin film epitaxially grown on a piezoelectric GaAs substrate. The SAW velocity is observed to strongly depend on both the amplitude and direction of the magnetic field. To interpret the experimental data a phenomenological approach to the relative change in SAW velocity is implemented. We find that the experimental velocity variation can be well reproduced provided that the spin wave dispersion is taken into account. The validity of this phenomenological model is attested by the comparison with a quasi-exact magnetoelastic one.
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Submitted 5 January, 2023; v1 submitted 21 March, 2022;
originally announced March 2022.
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Magnetoresistance in Fe$_{1-x}$Ga$_x$ thin films presenting striped magnetic pattern: the role of closure domains and domain walls
Authors:
B. Pianciola,
S. Flewett,
E. De Biasi,
C. Hepburn,
L. Lounis,
M. Vásquez-Mansilla,
M. Granada,
M. Barturen,
M. Eddrief,
M. Sacchi,
M. Marangolo,
J. Milano
Abstract:
In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetiza…
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In this work we show the existence of closure domains in Fe$_{1-x}$Ga$_x$ thin films featuring a striped magnetic pattern and study the effect of the magnetic domain arrangement on the magnetotransport properties. By means of X-ray resonant magnetic scattering, we experimentally demonstrate the presence of such closure domains and estimate their sizes and relative contribution to surface magnetization. Magnetotransport experiments show that the behavior of the magnetoresistance depends on the measurement geometry as well as on the temperature. When the electric current ows perpendicular to the stripe direction, the resistivity decreases when a magnetic field is applied along the stripe direction (negative magnetoresistance) in all the studied temperature range, and the calculations indicate that the main source is the anisotropic magnetoresistance. In the case of current flowing parallel to the stripe domains, the magnetoresistance changes sign, being positive at room temperature and negative at 100 K. To explain this behavior, the contribution to magnetoresistance from the domain walls must be considered besides the anisotropic one.
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Submitted 30 January, 2020;
originally announced January 2020.
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Thermal conductivity of Bi$_2$Se$_3$ from bulk to thin films: theory and experiment
Authors:
Lorenzo Paulatto,
Danièle Fournier,
Massimiliano Marangolo,
Mahmoud Eddrief,
Paola Atkinson,
Matteo Calandra
Abstract:
We calculate the lattice-driven in-plane $(κ_{\parallel})$ and out-of-plane $(κ_{\perp})$ thermal conductivities of Bi$_2$Se$_3$ bulk, and of films of different thicknesses, using the Boltzmann equation with phonon scattering times obtained from anharmonic third order density functional perturbation theory.
We compare our results for the lattice component of the thermal conductivity with publish…
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We calculate the lattice-driven in-plane $(κ_{\parallel})$ and out-of-plane $(κ_{\perp})$ thermal conductivities of Bi$_2$Se$_3$ bulk, and of films of different thicknesses, using the Boltzmann equation with phonon scattering times obtained from anharmonic third order density functional perturbation theory.
We compare our results for the lattice component of the thermal conductivity with published data for $κ_{\parallel}$ on bulk samples and with our room-temperature thermoreflectance measurements of $κ_{\perp}$ on films of thickness (L) ranging from 18~nm to 191~nm, where the lattice component has been extracted via the Wiedemann-Franz law. Ab-initio theoretical calculations on bulk samples, including an effective model to account for finite sample thickness and defect scattering, compare favorably both for the bulk case (from literature) and thin films (new measurements). In the low-T limit the theoretical in-plane lattice thermal conductivity of bulk Bi$_2$Se$_3$ agrees with previous measurements by assuming the occurrence of intercalated Bi$_2$ layer defects. The measured thermal conductivity monotonically decreases by reducing $L$, its value is $κ_{\perp}\approx 0.39\pm 0.08$~W/m$\cdot$K for $L=18$ nm and $κ_{\perp}=0.68\pm0.14$~W/m$\cdot$K for $L=191$ nm. We show that the decrease of room-temperature $κ_{\perp}$ in Bi$_2$Se$_3$ thin films as a function of sample thickness can be explained by the incoherent scattering of out-of-plane momentum phonons with the film surface. Our work outlines the crucial role of sample thinning in reducing the out-of-plane thermal conductivity.
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Submitted 23 March, 2020; v1 submitted 13 December, 2019;
originally announced December 2019.
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Spin-Orbit induced phase-shift in Bi$_{2}$Se$_{3}$ Josephson junctions
Authors:
Alexandre Assouline,
Cheryl Feuillet-Palma,
Nicolas Bergeal,
Tianzhen Zhang,
Alireza Mottaghizadeh,
Alexandre Zimmers,
Emmanuel Lhuillier,
Mahmoud Eddrief,
Paola Atkinson,
Marco Aprili,
Herve Aubin
Abstract:
The transmission of Cooper pairs between two weakly coupled superconductors produces a superfluid current and a phase difference; the celebrated Josephson effect. Because of time-reversal and parity symmetries, there is no Josephson current without a phase difference between two superconductors. Reciprocally, when those two symmetries are broken, an anomalous supercurrent can exist in the absence…
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The transmission of Cooper pairs between two weakly coupled superconductors produces a superfluid current and a phase difference; the celebrated Josephson effect. Because of time-reversal and parity symmetries, there is no Josephson current without a phase difference between two superconductors. Reciprocally, when those two symmetries are broken, an anomalous supercurrent can exist in the absence of phase bias or, equivalently, an anomalous phase shift $\varphi_0$ can exist in the absence of a superfluid current. We report on the observation of an anomalous phase shift $\varphi_0$ in hybrid Josephson junctions fabricated with the topological insulator Bi$_2$Se$_3$ submitted to an in-plane magnetic field. This anomalous phase shift $\varphi_0$ is observed directly through measurements of the current-phase relationship in a Josephson interferometer. This result provides a direct measurement of the spin-orbit coupling strength and open new possibilities for phase-controlled Josephson devices made from materials with strong spin-orbit coupling.
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Submitted 25 January, 2019; v1 submitted 4 June, 2018;
originally announced June 2018.
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Straightforward measurement of thermal properties of anisotropic materials: the case of Bi2Se3 single crystal
Authors:
Danièle Fournier,
Massimiliano Marangolo,
Mahmoud Eddrief,
Nikolai Kolesnikov,
Christian Fretigny
Abstract:
We show that by a simple two-steps measurement protocol one can extract the thermal properties of anisotropic insulator materials. We focus on Bi2Se3 single crystal, a layered crystal with individual sheets held together by Van der Waals force, presenting strong heat diffusion anisotropy. Since the shape of the sample does not allow experiments in the perpendicular direction the challenge is to me…
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We show that by a simple two-steps measurement protocol one can extract the thermal properties of anisotropic insulator materials. We focus on Bi2Se3 single crystal, a layered crystal with individual sheets held together by Van der Waals force, presenting strong heat diffusion anisotropy. Since the shape of the sample does not allow experiments in the perpendicular direction the challenge is to measure the in plane and out of plane thermal properties by in plane measurements. The optical properties of Bi2Se3 being known (opaque sample for the pump and probe beams), thermoreflectance microscopy experiments can be done on the bare substrate. In this case, the lateral heat diffusion is governed by the in plane thermal diffusivity. A 100 nm gold layer is then deposited on the sample. In this second experiment it is straightforward to demonstrate that the perpendicular thermal properties of the layer rule the lateral diffusivity. The good agreement of theoretical curves obtained by thermal models with experimental data permit us to evaluate the thermal conductivity coefficients of bulk Bi2Se3.
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Submitted 25 October, 2017;
originally announced October 2017.
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Magnetization dynamics of weak stripe domains in Fe-N thin films: a multi-technique complementary approach
Authors:
S. Camara,
S. Tacchi,
L. -C. Garnier,
M. Eddrief,
F. Fortuna,
G. Carlotti,
M. Marangolo
Abstract:
The resonant eigenmodes of a nitrogen-implanted iron α'-FeN characterized by weak stripe domains are investigated by Brillouin light scattering and broadband ferromagnetic resonance experiments, assisted by micromagnetic simulations. The spectrum of the dynamic eigenmodes in the presence of the weak stripes is very rich and two different families of modes can be selectively detected using differen…
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The resonant eigenmodes of a nitrogen-implanted iron α'-FeN characterized by weak stripe domains are investigated by Brillouin light scattering and broadband ferromagnetic resonance experiments, assisted by micromagnetic simulations. The spectrum of the dynamic eigenmodes in the presence of the weak stripes is very rich and two different families of modes can be selectively detected using different techniques or different experimental configurations. Attention is paid to the evolution of the mode frequencies and spatial profiles under the application of an external magnetic field, of variable intensity, in the direction parallel or transverse to the stripes. The different evolution of the modes with the external magnetic field is accompanied by a distinctive spatial localization in specific regions, such as the closure domains at the surface of the stripes and the bulk domains localized in the inner part of the stripes. The complementarity of BLS and FMR techniques, based on different selection rules, is found to be a fruitful tool for the study of the wealth of localized mag-netic excitations generally found in nanostructures.
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Submitted 14 August, 2017;
originally announced August 2017.
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Tunable Quasiparticle Band Gap in Few Layer GaSe/graphene Van der Waals Heterostructures
Authors:
Zeineb Ben Aziza,
Debora Pierucci,
Hugo Henck,
Mathieu G. Silly,
Christophe David,
Mina Yoon,
Fausto Sirotti,
Kai Xiao,
Mahmoud Eddrief,
Jean-Christophe Girard,
Abdelkarim Ouerghi
Abstract:
Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic p…
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Two-dimensional (2D) materials have recently been the focus of extensive research. By following a similar trend as graphene, other 2D materials including transition metal dichalcogenides (MX2) and metal mono-chalcogenides (MX) show great potential for ultrathin nanoelectronic and optoelectronic devices. Despite the weak nature of interlayer forces in semiconducting MX materials, their electronic properties are highly dependent on the number of layers. Using scanning tunneling microscopy and spectroscopy (STM/STS), we demonstrate the tunability of the quasiparticle energy gap of few layered gallium selenide (GaSe) directly grown on a bilayer graphene substrate by molecular beam epitaxy (MBE). Our results show that the band gap is about 3.50 +/-0.05 eV for single-tetralayer (1TL), 3.00 +/-0.05 eV for bi-tetralayer (2TL) and 2.30 +/-0.05 eV for tri-tetralayer (3TL). This band gap evolution of GaSe, in particularly the shift of the valence band with respect to the Fermi level, was confirmed by angle-resolved photoemission spectroscopy (ARPES) measurements and our theoretical calculations. Moreover, we observed a charge transfer in GaSe/graphene van der Waals (vdW) heterostructure using ARPES. These findings demonstrate the high impact on the GaSe electronic band structure and electronic properties that can be obtained by the control of 2D materials layer thickness and the graphene induced doping.
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Submitted 5 July, 2017;
originally announced July 2017.
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Low energy Ne ion beam induced-modifications of magnetic properties in MnAs thin films
Authors:
M Trassinelli,
L Bernard Carlsson,
S Cervera,
M Eddrief,
V Etgens,
V Gafton,
E Lacaze,
E Lamour,
M Lévy,
S Macé,
C. Prigent,
J. -P. Rozet,
S Steydli,
M Marangolo,
D Vernhet
Abstract:
Investigations of the complex behavior of the magnetization of manganese arsenide thin films due to defects induced by irradiation of slow heavy ions are presented. In addition to the thermal hysteresis suppression already highlighted in M. Trassinelli et al., Appl. Phys. Lett. 104, 081906 (2014), we report here on new local magnetic features recorded by a magnetic force microscope at different te…
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Investigations of the complex behavior of the magnetization of manganese arsenide thin films due to defects induced by irradiation of slow heavy ions are presented. In addition to the thermal hysteresis suppression already highlighted in M. Trassinelli et al., Appl. Phys. Lett. 104, 081906 (2014), we report here on new local magnetic features recorded by a magnetic force microscope at different temperatures close to the characteristic sample phase transition. Complementary measurements of the global magnetization measurements in different conditions (applied magnetic field and temperatures) enable to complete the film characterization. The obtained results suggest that the ion bombardment produces regions where the local mechanical constraints are significantly different from the average, promoting the local presence of magneto-structural phases far from the equilibrium. These regions could be responsible for the thermal hysteresis suppression previously reported, irradiation-induced defects acting as seeds in the phase transition.
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Submitted 18 November, 2016;
originally announced November 2016.
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Fast atom diffraction inside a molecular beam epitaxy chamber, a rich combination
Authors:
M. Debiossac,
P. Atkinson,
A. Zugarramurdi,
M. Eddrief,
F. Finocchi,
V. H. Etgens,
A. Momeni,
H. Khemliche,
A. G. Borisov,
P. Roncin
Abstract:
Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the…
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Two aspects of the contribution of grazing incidence fast atom diffraction (GIFAD) to molecular beam epitaxy (MBE) are reviewed here: the ability of GIFAD to provide \emph{in-situ} a precise description of the atomic-scale surface topology, and its ability to follow larger-scale changes in surface roughness during layer-by-layer growth. Recent experimental and theoretical results obtained for the He atom beam incident along the highly corrugated $[ 1\bar{1}0 ]$ direction of the $β_{2}$(2$\times$4) reconstructed GaAs(001) surface are summarized and complemented by the measurements and calculations for the beam incidence along the weakly corrugated [010] direction where a periodicity twice smaller as expected is observed. The combination of the experiment, quantum scattering matrix calculations, and semiclassical analysis allows in this case to reveal structural characteristics of the surface. For the in situ measurements of GIFAD during molecular beam epitaxy of GaAs on GaAs surface we analyse the change in elastic and inelastic contributions in the scattered beam, and the variation of the diffraction pattern in polar angle scattering. This analysis outlines the robustness, the simplicity and the richness of the GIFAD as a technique to monitor the layer-by-layer epitaxial growth.
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Submitted 30 December, 2015;
originally announced December 2015.
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Hints on the origin of the thermal hysteresis suppression in giant magnetocaloric thin films irradiatied with highly charged ions
Authors:
S Cervera,
M Trassinelli,
M Marangolo,
L. Bernard Carlsson,
M Eddrief,
Victor H. Etgens,
V Gafton,
S Hidki,
E Lamour,
A Lévy,
S Macé,
C Prigent,
J. -P Rozet,
S Steydli,
Y Zheng,
D Vernhet
Abstract:
In a recent experiment we demonstrated the possibility to suppress the thermal hysteresis of the phase transition in giant magnetocaloric MnAs thin film by interaction with slow highly charged ions (Ne 9+ at 90 keV) [1]. This phenomenon has a major impact for possible applications in magnetic refrigeration and thus its reproducibility and robustness are of prime importance. Here we present some ne…
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In a recent experiment we demonstrated the possibility to suppress the thermal hysteresis of the phase transition in giant magnetocaloric MnAs thin film by interaction with slow highly charged ions (Ne 9+ at 90 keV) [1]. This phenomenon has a major impact for possible applications in magnetic refrigeration and thus its reproducibility and robustness are of prime importance. Here we present some new investigations about the origin and the nature of the irradiation-induced defects responsible for the thermal hysteresis suppression. Considering in particular two samples that receive different ion fluences (two order of magnitude of difference), we investigate the reliability of this process. The stability of the irradiation-induced defects with respect to a soft annealing is studied by X-ray diffraction and magnetometry measurements, which provide some new insights on the mechanisms involved.
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Submitted 18 November, 2015;
originally announced November 2015.
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Large perpendicular magnetic anisotropy in magnetostrictive Fe$_{1-x}$Ga$_x$ thin films
Authors:
M. Barturen,
J. Milano,
M. Vásquez-Mansilla,
C. Helman,
M. A. Barral,
A. M. Llois,
M. Eddrief,
M. Marangolo
Abstract:
In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples recently reported [M. Eddrief {\it et al.}, Phys. Rev. B {\bf 84}, 161410 (2011)]. By means of ferromagnetic resonance studies we measured PMA values up to $\sim$…
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In this work we report the appearence of a large perpendicular magnetic anisotropy (PMA) in Fe$_{1-x}$Ga$_x$ thin films grown onto ZnSe/GaAs(100). This arising anisotropy is related to the tetragonal metastable phase in as-grown samples recently reported [M. Eddrief {\it et al.}, Phys. Rev. B {\bf 84}, 161410 (2011)]. By means of ferromagnetic resonance studies we measured PMA values up to $\sim$ 5$\times$10$^5$ J/m$^3$. PMA vanishes when the cubic structure is recovered upon annealing at 300$^{\circ}$C. Despite the important values of the magnetoelastic constants measured via the cantilever method, the consequent magnetoelastic contribution to PMA is not enough to explain the observed anisotropy values in the distorted state. {\it Ab initio} calculations show that the chemical ordering plays a crucial role in the appearance of PMA. Through a phenomenological model we are able to explain that an excess of next nearest neighbour Ga pairs (B$_2$-like ordering) along the perpendicular direction arises as the source of PMA in Fe$_{1-x}$Ga$_x$ thin films.
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Submitted 14 August, 2015; v1 submitted 11 November, 2014;
originally announced November 2014.
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Observation of Distinct Bulk and Surface Chemical Environments in a Topological Insulator under Magnetic doping
Authors:
Ivana Vobornik,
Giancarlo Panaccione,
Jun Fujii,
Zhi-Huai Zhu,
Francesco Offi,
Benjamin R. Salles,
Francesco Borgatti,
Piero Torelli,
Jean Pascal Rueff,
Denis Ceolin,
Alberto Artioli,
Manju Unnikrishnan,
Giorgio Levy,
Massimiliano Marangolo,
Mamhoud Eddrief,
Damjan Krizmancic,
Huiwen Ji,
Andrea Damascelli,
Gerrit van der Laan,
Russell G. Egdell,
Robert J. Cava
Abstract:
The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide spectroscopic evidence for the presence of distinct chemical and electronic behavior for surface and bulk magnetic doping of Bi2Te3. The inclusion of Mn in the b…
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The influence of magnetic dopants on the electronic and chemical environments in topological insulators (TIs) is a key factor when considering possible spintronic applications based on topological surface state properties. Here we provide spectroscopic evidence for the presence of distinct chemical and electronic behavior for surface and bulk magnetic doping of Bi2Te3. The inclusion of Mn in the bulk of Bi2Te3 induces a genuine dilute ferromagnetic state, with reduction of the bulk band gap as the Mn content is increased. Deposition of Fe on the Bi2Te3 surface, on the other hand, favors the formation of iron telluride already at coverages as low as 0.07 monolayer, as a consequence of the reactivity of the Te-rich surface. Our results identify the factors that need to be controlled in the realization of magnetic nanosystems and interfaces based on TIs.
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Submitted 13 August, 2014;
originally announced August 2014.
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Suppression of the thermal hysteresis in magnetocaloric MnAs thin film by highly charged ion bombardment
Authors:
Martino Trassinelli,
Massimiliano Marangolo,
M. Eddrief,
V. H. Etgens,
V. Gafton,
S. Hidki,
Emmanuelle Lacaze,
Emily Lamour,
Christophe Prigent,
Jean-Pierre Rozet,
S. Steydli,
Y. Zheng,
Dominique Vernhet
Abstract:
We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hy…
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We present the investigation on the modifications of structural and magnetic properties of MnAs thin film epitaxially grown on GaAs induced by slow highly charged ions bombardment under well-controlled conditions. The ion-induced defects facilitate the nucleation of one phase with respect to the other in the first-order magneto-structural MnAs transition with a consequent suppression of thermal hysteresis without any significant perturbation on the other structural and magnetic properties. In particular, the irradiated film keeps the giant magnetocaloric effect at room temperature opening new perspective on magnetic refrigeration technology for everyday use.
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Submitted 12 February, 2014;
originally announced February 2014.
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Magnetic properties changes of MnAs thin films irradiated with highly charged ions
Authors:
Martino Trassinelli,
V. Gafton,
M. Eddrief,
V. H. Etgens,
S. Hidki,
Emmanuelle Lacaze,
Emily Lamour,
X. Luo,
M. Marangolo,
Jacques Merot,
Christophe Prigent,
Regina Reuschl,
Jean-Pierre Rozet,
S. Steydli,
Dominique Vernhet
Abstract:
We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150 nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\times10^{12}$ to $1.6\times10^{15}$ ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray dif…
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We present the first investigation on the effect of highly charged ion bombardment on a manganese arsenide thin film. The MnAs films, 150 nm thick, are irradiated with 90 keV Ne$^{9+}$ ions with a dose varying from $1.6\times10^{12}$ to $1.6\times10^{15}$ ions/cm$^2$. The structural and magnetic properties of the film after irradiation are investigated using different techniques, namely, X-ray diffraction, magneto-optic Kerr effect and magnetic force microscope. Preliminary results are presented. From the study of the lattice spacing, we measure a change on the film structure that depends on the received dose, similarly to previous studies with other materials. Investigations on the surface show a strong modification of its magnetic properties.
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Submitted 13 December, 2012;
originally announced December 2012.
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Ultrasonic triggering of giant magnetocaloric effect in MnAs thin films
Authors:
J. -Y. Duquesne,
J. -Y. Prieur,
J. Agudo Canalejo,
V. H. Etgens,
M. Eddrief,
A. L. Ferreira,
M. Marangolo
Abstract:
Mechanical control of magnetic properties in magnetostrictive thin films offers the unexplored opportunity to employ surface wave acoustics in such a way that acoustic triggers dynamic magnetic effects. The strain-induced modulation of the magnetic anisotropy can play the role of a high frequency varying effective magnetic field leading to ultrasonic tuning of electronic and magnetic properties of…
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Mechanical control of magnetic properties in magnetostrictive thin films offers the unexplored opportunity to employ surface wave acoustics in such a way that acoustic triggers dynamic magnetic effects. The strain-induced modulation of the magnetic anisotropy can play the role of a high frequency varying effective magnetic field leading to ultrasonic tuning of electronic and magnetic properties of nanostructured materials, eventually integrated in semiconductor technology. Here, we report about the opportunity to employ surface acoustic waves to trigger magnetocaloric effect in MnAs(100nm)/GaAs(001) thin films. During the MnAs magnetostructural phase transition, in an interval range around room temperature (0°C - 60°C), ultrasonic waves (170 MHz) are strongly attenuated by the phase coexistence (up to 150 dB/cm). We show that the giant magnetocaloric effect of MnAs is responsible of the observed phenomenon. By a simple anelastic model we describe the temperature and the external magnetic field dependence of such a huge ultrasound attenuation. Strain-manipulation of the magnetocaloric effect could be a further interesting route for dynamic and static caloritronics and spintronics applications in semiconductor technology.
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Submitted 22 June, 2012;
originally announced June 2012.
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Imaging the antiparallel magnetic alignment of adjacent Fe and MnAs thin films
Authors:
R. Breitwieser,
M. Marangolo,
J. Luning,
N. Jaouen,
L. Joly,
M. Eddrief,
V. H. Etgens,
M. Sacchi
Abstract:
The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission electron microscopy. At room temperature, MnAs layers display ridges and grooves, alternating alpha (magnetic) and beta (non-magnetic) phases. The self-organised microstructure of MnAs and the stray fields that it gene…
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The magnetic coupling between iron and alpha - MnAs in the epitaxial system Fe/MnAs/GaAs(001) has been studied at the sub-micron scale, using element selective x-ray photoemission electron microscopy. At room temperature, MnAs layers display ridges and grooves, alternating alpha (magnetic) and beta (non-magnetic) phases. The self-organised microstructure of MnAs and the stray fields that it generates govern the local alignment between the Fe and alpha - MnAs magnetization directions, which is mostly antiparallel with a marked dependence upon the magnetic domain size.
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Submitted 3 September, 2008;
originally announced September 2008.
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Biaxial Strain in the Hexagonal Plane of MnAs Thin Films: The Key to Stabilize Ferromagnetism to Higher Temperature
Authors:
V. Garcia,
Y. Sidis,
M. Marangolo,
F. Vidal,
M. Eddrief,
P. Bourges,
F. Maccherozzi,
F. Ott,
G. Panaccione,
V. H. Etgens
Abstract:
The alpha-beta magneto-structural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 K to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more import…
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The alpha-beta magneto-structural phase transition in MnAs/GaAs(111) epilayers is investigated by elastic neutron scattering. The in-plane parameter of MnAs remains almost constant with temperature from 100 K to 420 K, following the thermal evolution of the GaAs substrate. This induces a temperature dependent biaxial strain that is responsible for an alpha-beta phase coexistence and, more important, for the stabilization of the ferromagnetic alpha-phase at higher temperature than in bulk. We explain the premature appearance of the beta-phase at 275 K and the persistence of the ferromagnetic alpha-phase up to 350 K with thermodynamical arguments based on the MnAs phase diagram. It results that the biaxial strain in the hexagonal plane is the key parameter to extend the ferromagnetic phase well over room temperature.
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Submitted 2 August, 2007;
originally announced August 2007.
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Detection of the magneto-structural phase coexistence in MnAs epilayers at a very early stage
Authors:
J. Milano,
L. B. Steren,
A. H. V. Repetto Llamazares,
V. Garcia,
M. Marangolo,
M. Eddrief,
V. H. Etgens
Abstract:
We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100) and (111) GaAs substrates. The FMR spectra of the MnAs/GaAs(100) samples at 180 K reveal the appearance of zones of different magnetic behavior…
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We report on the appearance of magnetic stripes in MnAs/GaAs(100) epilayers at temperatures well below the ferromagnetic transition of the system. The study has been performed by ferromagnetic resonance experiments (FMR) on MnAs epilayers grown on (100) and (111) GaAs substrates. The FMR spectra of the MnAs/GaAs(100) samples at 180 K reveal the appearance of zones of different magnetic behavior with respect to the low-temperature homogeneous ferromagnetic phase. The angular and the temperature dependence of the spectra serve us to detect the inter-growth of the non-magnetic phase into the ferromagnetic phase at a very early stage of the process. The experimental data show that the new phase nucleates in a self-arranged array of stripes in MnAs/GaAs(100) thin films while it grows randomly in the same films grown on GaAs(111).
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Submitted 4 July, 2007;
originally announced July 2007.
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Magnetization reversal and anomalous coercive field temperature dependence in MnAs epilayers grown on GaAs(100) and GaAs(111)B
Authors:
L. B. Steren,
J. Milano,
V. Garcia,
M. Marangolo,
M. Eddrief,
V. H. Etgens
Abstract:
The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature…
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The magnetic properties of MnAs epilayers have been investigated for two different substrate orientations: GaAs(100) and GaAs(111). We have analyzed the magnetization reversal under magnetic field at low temperatures, determining the anisotropy of the films. The results, based on the shape of the magnetization loops, suggest a domain movement mechanism for both types of samples. The temperature dependence of the coercivity of the films has been also examined, displaying a generic anomalous reentrant behavior at T$>$200 K. This feature is independent of the substrate orientation and films thickness and may be associated to the appearance of new pinning centers due to the nucleation of the $β$-phase at high temperatures.
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Submitted 27 June, 2006;
originally announced June 2006.
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Interface bonding of a ferromagnetic/semiconductor junction : a photoemission study of Fe/ZnSe(001)
Authors:
M. Eddrief,
M. Marangolo,
V. H. Etgens,
S. Ustaze,
F. Sirotti,
M. Mulazzi,
G. Panaccione,
D. H. Mosca,
B. Lepine,
P. Schieffer
Abstract:
We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microsc…
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We have probed the interface of a ferromagnetic/semiconductor (FM/SC) heterojunction by a combined high resolution photoemission spectroscopy and x-ray photoelectron diffraction study. Fe/ZnSe(001) is considered as an example of a very low reactivity interface system and it expected to constitute large Tunnel Magnetoresistance devices. We focus on the interface atomic environment, on the microscopic processes of the interface formation and on the iron valence-band. We show that the Fe contact with ZnSe induces a chemical conversion of the ZnSe outermost atomic layers. The main driving force that induces this rearrangement is the requirement for a stable Fe-Se bonding at the interface and a Se monolayer that floats at the Fe growth front. The released Zn atoms are incorporated in substitution in the Fe lattice position. This formation process is independent of the ZnSe surface termination (Zn or Se). The Fe valence-band evolution indicates that the d-states at the Fermi level show up even at submonolayer Fe coverage but that the Fe bulk character is only recovered above 10 monolayers. Indeed, the Fe 1-band states, theoretically predicted to dominate the tunneling conductance of Fe/ZnSe/Fe junctions, are strongly modified at the FM/SC interface.
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Submitted 31 January, 2006;
originally announced January 2006.
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Resonant tunneling magnetoresistance in epitaxial metal-semiconductor heterostructures
Authors:
J. Varalda,
A. J. A. de Oliveira,
D. H. Mosca,
J. -M. George,
M. Eddrief,
M. Marangolo,
V. H. Etgens
Abstract:
We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localiz…
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We report on resonant tunneling magnetoresistance via localized states through a ZnSe semiconducting barrier which can reverse the sign of the effective spin polarization of tunneling electrons. Experiments performed on Fe/ZnSe/Fe planar junctions have shown that positive, negative or even its sign-reversible magnetoresistance can be obtained, depending on the bias voltage, the energy of localized states in the ZnSe barrier and spatial symmetry. The averaging of conduction over all localized states in a junction under resonant condition is strongly detrimental to the magnetoresistance.
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Submitted 17 May, 2005;
originally announced May 2005.
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Magnetic and chemical properties of Cr-based films grown on GaAs(001)
Authors:
D. H. Mosca,
P. C. de Camargo,
J. L. Guimaraes,
W. H. Schreiner,
A. J. A. de Oliveira,
P. E. N. Souza,
M. Eddrief,
V. H. Etgens
Abstract:
We have investigated the magnetic and chemical properties of very thin Cr films, CrAs, and arsenized Cr grown by molecular beam epitaxy on Ga As (001), using x-ray photoemission spectroscopy and SQUID magnetometry. Distintic preparation procedures have been used with the purpose to undestand the origin of the ferromagneti signal observed for this system. It results that Ga segregation and chemic…
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We have investigated the magnetic and chemical properties of very thin Cr films, CrAs, and arsenized Cr grown by molecular beam epitaxy on Ga As (001), using x-ray photoemission spectroscopy and SQUID magnetometry. Distintic preparation procedures have been used with the purpose to undestand the origin of the ferromagneti signal observed for this system. It results that Ga segregation and chemical reactivity between Ga and Cr have negligible contribution in the formation of different thi films. A clear ferromagnetic response even at room temperature suggests the existence of a very thin interfacial layer formed that can eventually be burid during the growth process.
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Submitted 11 March, 2005;
originally announced March 2005.
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Thermal enhancement of the antiferromagnetic exchange coupling between Fe epilayers separated by a crystalline ZnSe spacer
Authors:
J. Varalda,
J. Milano,
A. J. A. de Oliveira,
E. M. Kakuno,
I. Mazzaro,
D. H. Mosca,
L. B. Steren,
M. Eddrief,
M. Marangolo,
D. Demaille,
V. H. Etgens
Abstract:
We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discuss…
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We have put into evidence the existence of an antiferromagnetic coupling between iron epilayers separated by a ZnSe crystalline semiconductor. The effect has been observed for ZnSe spacers thinner than 4 nm at room-temperature. The coupling constant increases linearly with temperature with a constant slope of ~5.5x 10-9 J/m2K. The mechanisms that may explain such exchange interaction are discussed in the manuscript. It results that thermally-induced effective exchange coupling mediated by spin-dependent on and off resonant tunnelling of electrons via localized mid-gap defect states in the ZnSe spacer layer appears to be the most plausible mechanism to induce the antiferromagnetic coupling.
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Submitted 7 March, 2005;
originally announced March 2005.
