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Orientation-Adaptive Virtual Imaging of Defects using EBSD
Authors:
Nicolò M. della Ventura,
James D. Lamb,
William C. Lenthe,
McLean P. Echlin,
Julia T. Pürstl,
Emily S. Trageser,
Alejandro M. Quevedo,
Matthew R. Begley,
Tresa M. Pollock,
Daniel S. Gianola,
Marc De Graef
Abstract:
EBSD is a foundational technique for characterizing crystallographic orientation, phase distribution, and lattice strain. Embedded within EBSD patterns lies latent information on dislocation structures, subtly encoded due to their deviation from perfect crystallinity - a feature often underutilized. Here, a novel framework termed orientation-adaptive virtual apertures (OAVA) is introduced. OAVAs e…
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EBSD is a foundational technique for characterizing crystallographic orientation, phase distribution, and lattice strain. Embedded within EBSD patterns lies latent information on dislocation structures, subtly encoded due to their deviation from perfect crystallinity - a feature often underutilized. Here, a novel framework termed orientation-adaptive virtual apertures (OAVA) is introduced. OAVAs enable the generation of virtual images tied to specific diffraction conditions, allowing the direct visualization of individual dislocations from a single EBSD map. By dynamically aligning virtual apertures in reciprocal space with the local crystallographic orientation, the method enhances contrast from defect-related strain fields, mirroring the principles of diffraction-contrast imaging in TEM, but without sample tilting. The approach capitalizes on the extensive diffraction space captured in a single high-quality EBSD scan, with its effectiveness enhanced by modern direct electron detectors that offer high-sensitivity at low accelerating voltages, reducing interaction volume and improving spatial resolution. We demonstrate that using OAVAs, identical imaging conditions can be applied across a polycrystalline field-of-view, enabling uniform contrast in differently oriented grains. Furthermore, in single-crystal GaN, threading dislocations are consistently resolved. Algorithms for the automated detection of dislocation contrast are presented, advancing defect characterization. By using OAVAs across a wide range of diffraction conditions in GaN, the visibility/invisibility of defects, owing to the anisotropy of the elastic strain field, is assessed and linked to candidate Burgers vectors. Altogether, OAVA offers a new and high-throughput pathway for orientation-specific defect characterization with the potential for automated, large-area defect analysis in single and polycrystalline materials.
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Submitted 21 April, 2025;
originally announced April 2025.
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Observation of Bulk Plasticity in a Polycrystalline Titanium Alloy by Diffraction Contrast Tomography and Topotomography
Authors:
J. C. Stinville,
W. Ludwig,
P. G. Callahan,
M. P. Echlin,
V. Valle,
T. M. Pollock,
H. Proudhon
Abstract:
The mechanical properties of polycrystalline metals are governed by the interaction of defects that are generated by deformation within the 3D microstructure. In materials that deform by slip, the plasticity is usually highly heterogeneous within the microstructure. Many experimental tools can be used to observe the results of slip events at the free surface of a sample; however, there are only a…
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The mechanical properties of polycrystalline metals are governed by the interaction of defects that are generated by deformation within the 3D microstructure. In materials that deform by slip, the plasticity is usually highly heterogeneous within the microstructure. Many experimental tools can be used to observe the results of slip events at the free surface of a sample; however, there are only a few methods for imaging these events in the bulk. In this article, the imaging of bulk slip events within the 3D microstructure are enabled by the combined use of X-ray diffraction contrast tomography and topotomography. Correlative measurements between high-resolution digital image correlation, X-ray diffraction contrast tomography, topotomography and phase contrast tomography are performed during deformation of Ti-7Al to investigate the sensitivity of the X-ray topotomography method for the observation of slip events in the bulk. Much larger neighborhoods of grains were able to be mapped than in previous studies, enabling quantitative measurements of slip transmission. Significant differences were observed between surface and bulk grains, indicating the need for 3D observations of plasticity to better understand deformation in polycrystalline materials.
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Submitted 10 November, 2021;
originally announced November 2021.
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Electron Backscattered Diffraction using a New Monolithic Direct Detector: High Resolution and Fast Acquisition
Authors:
Fulin Wang,
McLean P. Echlin,
Aidan A. Taylor,
Jungho Shin,
Benjamin Bammes,
Barnaby D. A. Levin,
Marc De Graef,
Tresa M. Pollock,
Daniel S. Gianola
Abstract:
A monolithic active pixel sensor based direct detector that is optimized for the primary beam energies in scanning electron microscopes is implemented for electron back-scattered diffraction (EBSD) applications. The high detection efficiency of the detector and its large array of pixels allow sensitive and accurate detection of Kikuchi bands arising from primary electron beam excitation energies o…
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A monolithic active pixel sensor based direct detector that is optimized for the primary beam energies in scanning electron microscopes is implemented for electron back-scattered diffraction (EBSD) applications. The high detection efficiency of the detector and its large array of pixels allow sensitive and accurate detection of Kikuchi bands arising from primary electron beam excitation energies of 4 keV to 28 keV, with the optimal contrast occurring in the range of 8-16 keV. The diffraction pattern acquisition speed is substantially improved via a sparse sampling mode, resulting from the acquisition of a reduced number of pixels on the detector. Standard inpainting algorithms are implemented to effectively estimate the information in the skipped regions in the acquired diffraction pattern. For EBSD mapping, a speed as high as 5988 scan points per second is demonstrated, with a tolerable fraction of indexed points and accuracy. The collective capabilities spanning from high angular resolution EBSD pattern to high speed pattern acquisition are achieved on the same detector, facilitating simultaneous detection modalities that enable a multitude of advanced EBSD applications, including lattice strain mapping, structural refinement, low-dose characterization, 3D-EBSD and dynamic in situ EBSD.
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Submitted 26 August, 2020;
originally announced August 2020.
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On the limits to mobility in InAs quantum wells with nearly lattice-matched barriers
Authors:
B. Shojaei,
A. C. C. Drachmann,
M. Pendharkar,
D. J. Pennachio,
M. P. Echlin,
P. G. Callahan,
S. Kraemer,
T. M. Pollock,
C. M. Marcus,
C. J. Palmstrøm
Abstract:
The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier de…
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The growth and the density dependence of the low temperature mobility of a series of two-dimensional electron systems confined to un-intentionally doped, low extended defect density InAs quantum wells with Al$_{1-x}$Ga$_{x}$Sb barriers are reported. The electron mobility limiting scattering mechanisms were determined by utilizing dual-gated devices to study the dependence of mobility on carrier density and electric field independently. Analysis of the possible scattering mechanisms indicate the mobility was limited primarily by rough interfaces in narrow quantum wells and a combination of alloy disorder and interface roughness in wide wells at high carrier density within the first occupied electronic sub-band. At low carrier density the functional dependence of the mobility on carrier density provided evidence of coulombic scattering from charged defects. A gate-tuned electron mobility exceeding 750,000 cm$^{2}$/Vs was achieved at a sample temperature of 2 K.
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Submitted 13 October, 2016; v1 submitted 12 October, 2016;
originally announced October 2016.
