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Graphene Electro-Absorption Modulators for Energy-Efficient and High-Speed Optical Transceivers
Authors:
M. Tiberi,
A. Montanaro,
C. Wen,
J. Zhang,
O. Balci,
S. M. Shinde,
S. Sharma,
A. Meersha,
H. Shekhar,
J. E. Muench,
B. R. Conran,
K. B. K. Teo,
M. Ebert,
X. Yan,
Y. Tran,
M. Banakar,
C. Littlejohns,
G. T. Reed,
M. Romagnoli,
A. Ruocco,
V. Sorianello,
A. C. Ferrari
Abstract:
The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth an…
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The increasing demand for energy-efficient hardware for artificial intelligence (AI) and data centres requires integrated photonic solutions delivering optical transceivers with Tbit/s data rates and energy consumption$<$1pJ/bit. Here, we report double single-layer graphene electro-absorption modulators on Si optimized for energy-efficient and ultra-fast operation, demonstrating 67GHz bandwidth and 80Gbit/s data rate, in both O and C bands, using a fabrication tailored for wafer-scale integration. We measure a data rate$\sim$1.6 times larger than previously reported for graphene. We scale the modulator's active area down to 22$μ$m$^2$, achieving a dynamic power consumption$\sim$58fJ/bit, $\sim$3 times lower than previous graphene modulators and Mach-Zehnder modulators based on Si or lithium niobate. We show devices with$\sim$0.037dB/V$μ$m modulation efficiency,$\sim$16 times better than previous demonstrations based on graphene. This paves the way to wafer-scale production of graphene modulators on Si useful for Tbit/s optical transceivers and energy-efficient AI
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Submitted 3 June, 2025;
originally announced June 2025.
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Optical switching beyond a million cycles of low-loss phase change material Sb$_2$Se$_3$
Authors:
Daniel Lawson,
Sophie Blundell,
Martin Ebert,
Otto L. Muskens,
Ioannis Zeimpekis
Abstract:
The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applicati…
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The development of the next generation of optical phase change technologies for integrated photonic and free-space platforms relies on the availability of materials that can be switched repeatedly over large volumes and with low optical losses. In recent years, the antimony-based chalcogenide phase-change material Sb$_2$Se$_3$ has been identified as particularly promising for a number of applications owing to good optical transparency in the near-infrared part of the spectrum and a high refractive index close to silicon. The crystallization temperature of Sb$_2$Se$_3$ of around 460 K allows switching to be achieved at moderate energies using optical or electrical control signals while providing sufficient data retention time for non-volatile storage. Here, we investigate the parameter space for optical switching of films of Sb$_2$Se$_3$ for a range of film thicknesses relevant for optical applications. By identifying optimal switching conditions, we demonstrate endurance of up to 10$^7$ cycles at reversible switching rates of 20 kHz. Our work demonstrates that the combination of intrinsic film parameters with pumping conditions is particularly critical for achieving high endurance in optical phase change applications.
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Submitted 16 October, 2023;
originally announced October 2023.
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Spectroscopic Neutron Imaging for Resolving Hydrogen Dynamics Changes in Battery Electrolytes
Authors:
E. R. Carreón Ruiz,
J. Lee,
J. I. Márquez Damián,
M. Strobl,
G. Burca,
R. Woracek,
M. Cochet,
M. -O. Ebert,
L. Höltschi,
P. M. Kadletz,
A. S. Tremsin,
E. Winter,
M. Zlobinski,
L. Gubler,
P. Boillat
Abstract:
We present spectroscopic neutron imaging (SNI), a bridge between imaging and scattering techniques, for the analysis of hydrogenated molecules in lithium-ion cells. The scattering information of CHn-based organic solvents and electrolytes was mapped in two-dimensional space by investigating the wavelength-dependent property of hydrogen atoms through time-of-flight imaging. Our investigation demons…
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We present spectroscopic neutron imaging (SNI), a bridge between imaging and scattering techniques, for the analysis of hydrogenated molecules in lithium-ion cells. The scattering information of CHn-based organic solvents and electrolytes was mapped in two-dimensional space by investigating the wavelength-dependent property of hydrogen atoms through time-of-flight imaging. Our investigation demonstrates a novel approach to detect physical and chemical changes in hydrogenated liquids, which extends, but not limits, the use of SNI to relevant applications in electrochemical devices, e.g., the study of electrolytes in Li-ion batteries.
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Submitted 18 July, 2022;
originally announced July 2022.
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Scalable, Highly Crystalline, 2D Semiconductor Atomic Layer Deposition Process for High Performance Electronic Applications
Authors:
Nikolaos Aspiotis,
Katrina Morgan,
Benjamin März,
Knut Müller-Caspary,
Martin Ebert,
Chung-Che Huang,
Daniel W. Hewak,
Sayani Majumdar,
Ioannis Zeimpekis
Abstract:
This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptak…
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This work demonstrates a large area process for atomically thin 2D semiconductors to unlock the technological upscale required for their commercial uptake. The new atomic layer deposition (ALD) and conversion technique yields large area performance uniformity and tunability. Like graphene, 2D Transition Metal Dichalcogenides (TMDCs) are prone to upscaling challenges limiting their commercial uptake. They are challenging to grow uniformly on large substrates and to transfer on alternative substrates while they often lack in large area electrical performance uniformity. The scalable ALD process of this work enables uniform growth of 2D TMDCs on large area with independent control of layer thickness, stoichiometry and crystallinity while allowing chemical free transfers to application substrates. Field effect transistors (FETs) fabricated on flexible substrates using the process present a field effect mobility of up to 55 cm^2/Vs, subthreshold slope down to 80 mV/dec and on/off ratios of 10^7. Additionally, non-volatile memory transistors using ferroelectric FETs (FeFETs) operating at +-5 V with on/off ratio of 107 and a memory window of 3.25 V are demonstrated. These FeFETs demonstrate state-of-the-art performance with multiple state switching, suitable for one-transistor non-volatile memory and for synaptic transistors revealing the applicability of the process to flexible neuromorphic applications.
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Submitted 19 March, 2022;
originally announced March 2022.
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Deep learning enabled design of complex transmission matrices for universal optical components
Authors:
Nicholas J. Dinsdale,
Peter R. Wiecha,
Matthew Delaney,
Jamie Reynolds,
Martin Ebert,
Ioannis Zeimpekis,
David J. Thomson,
Graham T. Reed,
Philippe Lalanne,
Kevin Vynck,
Otto L. Muskens
Abstract:
Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate…
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Recent breakthroughs in photonics-based quantum, neuromorphic and analogue processing have pointed out the need for new schemes for fully programmable nanophotonic devices. Universal optical elements based on interferometer meshes are underpinning many of these new technologies, however this is achieved at the cost of an overall footprint that is very large compared to the limited chip real estate, restricting the scalability of this approach. Here, we consider an ultracompact platform for low-loss programmable elements using the complex transmission matrix of a multi-port multimode waveguide. We propose a deep learning inverse network approach to design arbitrary transmission matrices using patterns of weakly scattering perturbations. The demonstrated technique allows control over both the intensity and phase in a multiport device at a four orders reduced device footprint compared to conventional technologies, thus opening the door for large-scale integrated universal networks.
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Submitted 8 December, 2020; v1 submitted 24 September, 2020;
originally announced September 2020.
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Two Cold Atoms in a Time-Dependent Harmonic Trap in One Dimension
Authors:
M. Ebert,
A. Volosniev,
H. -W. Hammer
Abstract:
We analyze the dynamics of two atoms with a short-ranged pair interaction in a one-dimensional harmonic trap with time-dependent frequency. Our analysis is focused on two representative cases: (i) a sudden change of the trapping frequency from one value to another, and (ii) a periodic trapping frequency. In case (i), the dynamics of the interacting and the corresponding non-interacting systems tur…
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We analyze the dynamics of two atoms with a short-ranged pair interaction in a one-dimensional harmonic trap with time-dependent frequency. Our analysis is focused on two representative cases: (i) a sudden change of the trapping frequency from one value to another, and (ii) a periodic trapping frequency. In case (i), the dynamics of the interacting and the corresponding non-interacting systems turn out to be similar. In the second case, however, the interacting system can behave quite differently, especially close to parametric resonance. For instance, in the regions where such resonance occurs we find that the interaction can significantly reduce the rate of energy increase. The implications for applications of our findings to cool or heat the system are also dicussed.
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Submitted 7 July, 2016; v1 submitted 21 December, 2015;
originally announced December 2015.
