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Predicting the Realizable Maximum Power Factor using the Jonker and Ioffe formulation: Al-doped ZnO Triangular Microcrystals with Graphite Inclusion Case Study
Authors:
Soumya Biswas,
Keshav Dabral,
Saptak Majumder,
Rajasekar Parasuraman,
Aditya S. Dutt,
Vinayak B. Kamble
Abstract:
Among the popular TE materials, selenides and tellurides are the benchmarks of high-efficiency systems. However, for the high-temperature application (>700 K), it is required to rely on the silicides and the oxides due to their exceptional thermal stability. ZnO is among the first few oxides in the field of thermoelectricity. Al-doped ZnO is a proven material for its high-temperature thermoelectri…
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Among the popular TE materials, selenides and tellurides are the benchmarks of high-efficiency systems. However, for the high-temperature application (>700 K), it is required to rely on the silicides and the oxides due to their exceptional thermal stability. ZnO is among the first few oxides in the field of thermoelectricity. Al-doped ZnO is a proven material for its high-temperature thermoelectric applications. However, the high grain boundary resistance limits further improvement of the efficiency of this oxide. Band-engineering, band-modification is a successful approach in lowering the grain boundary resistance. The addition of graphite and graphite-based materials at the grain boundaries is shown to serve this purpose. In this work, graphite powder is added in varying proportions to Al-doped ZnO triangular microcrystals. Thus, prepared materials are characterized to confirm the formation and investigate the nature of interface, morphology, etc. TE parameters such as electrical conductivity, Seebeck coefficient, and thermal conductivity of those materials also have been measured. The theoretical calculation of TE efficiency zT often differs from the actual experimental results due to the wide range of preparation methods, leading to changes in porosity, the nature and density defects, and several other factors. In this paper, an effort has been made to estimate the maximum achievable power factor (PFmax) from the measured TE parameters of this set of samples by the Jonker and Ioffe analysis. Based on the predicted PFmax, an appropriate material composition has been identified to achieve that same. Subsequently, including the measured parameters the TE efficiency (zT) is calculated. Further, a sudden dip observed in the thermal conductivity at the high-temperature range (625 K - 1000 K) of the prepared undoped ZnO graphite composite is investigated in this paper.
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Submitted 19 September, 2024; v1 submitted 15 September, 2024;
originally announced September 2024.
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Fluctuation-Dissipation in Thermoelectrics
Authors:
Ngoc Anh Minh Tran,
Aditya Savitha Dutt,
Nithin Bharadwaj Pulumati,
Heiko Reith,
Anjun Hu,
Alexandre Dumont,
Kornelius Nielsch,
André-Marie Tremblay,
Gabi Schierning,
Bertrand Reulet,
Thomas Szkopek
Abstract:
Thermoelectric materials exhibit correlated transport of charge and heat. The Johnson-Nyquist noise formula $ 4 k_B T R $ for spectral density of voltage fluctuations accounts for fluctuations associated solely with Ohmic dissipation. Applying the fluctuation-dissipation theorem, we generalize the Johnson-Nyquist formula for thermoelectrics, finding an enhanced voltage fluctuation spectral density…
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Thermoelectric materials exhibit correlated transport of charge and heat. The Johnson-Nyquist noise formula $ 4 k_B T R $ for spectral density of voltage fluctuations accounts for fluctuations associated solely with Ohmic dissipation. Applying the fluctuation-dissipation theorem, we generalize the Johnson-Nyquist formula for thermoelectrics, finding an enhanced voltage fluctuation spectral density $4 k_B T R (1 + ZT)$ at frequencies below a thermal cut-off frequency $f_T$, where $ZT$ is the dimensionless thermoelectric material figure of merit. The origin of the enhancement in voltage noise is thermoelectric coupling of temperature fluctuations. We use a wideband ($f_T\sim1$ kHz), integrated thermoelectric micro-device to experimentally confirm our findings. Measuring the $ZT$ enhanced voltage noise, we experimentally resolve temperature fluctuations with an amplitude of $0.8~μ\mathrm{K} \mathrm{Hz}^{-1/2}$ at a mean temperature of 295 K. We find that thermoelectric devices can be used for thermometry with sufficient resolution to measure the fundamental temperature fluctuations described by the fluctuation-dissipation theorem.
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Submitted 13 January, 2022;
originally announced January 2022.
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Simple, Reversible Gradient Seebeck Coefficient Measurement System for 300-600K
Authors:
Soumya Biswas,
Aditya S Dutt,
Nirmal Sabastian,
Vinayak B Kamble
Abstract:
An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported instrumental designs, the system does not have a hot walled chamber and hence is much closer to real time thermoelectric applications conditions. The system cons…
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An in-house Seebeck coefficient measurement system has been developed which can measure the thermoemf (Seebeck coefficient) of the sample, under large temperature difference, in the temperature range 300-600 K. Unlike majority of reported instrumental designs, the system does not have a hot walled chamber and hence is much closer to real time thermoelectric applications conditions. The system consists of two brass blocks supported heaters. These heaters are placed on either side of the sample through silver caps, thus allows individual temperature control. A reversible temperature gradient is applied across the sample and the measurement is carried out in quasi-static direct current mode. Hence, a more accurate Seebeck coefficient measurement is obtained.
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Submitted 15 August, 2019;
originally announced August 2019.
