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Spin-flip Raman scattering of the $Γ$-X mixed exciton in indirect band-gap (In,Al)As/AlAs quantum dots
Authors:
J. Debus,
T. S. Shamirzaev,
D. Dunker,
V. F. Sapega,
E. L. Ivchenko,
D. R. Yakovlev,
A. I. Toropov,
M. Bayer
Abstract:
The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for st…
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The band structure of type-I (In,Al)As/AlAs quantum dots with band gap energy exceeding 1.63 eV is indirect in momentum space, leading to long-lived exciton states with potential applications in quantum information. Optical access to these excitons is provided by mixing of the $Γ$- and X-conduction band valleys, from which control of their spin states can be gained. This access is used here for studying the exciton spin-level structure by resonant spin-flip Raman scattering, allowing us to accurately measure the anisotropic hole and isotropic electron $g$ factors. The spin-flip mechanisms for the indirect exciton and its constituents as well as the underlying optical selection rules are determined. The spin-flip intensity is a reliable measure of the strength of $Γ$-X-valley mixing, as evidenced by both experiment and theory.
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Submitted 9 June, 2014;
originally announced June 2014.
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Spin-flip Raman scattering of the neutral and charged excitons confined in a CdTe/(Cd,Mg)Te quantum well
Authors:
J. Debus,
D. Dunker,
V. F. Sapega,
D. R. Yakovlev,
G. Karczewski,
T. Wojtowicz,
J. Kossut,
M. Bayer
Abstract:
Spin-flip Raman scattering of electrons and heavy-holes is studied for resonant excitation of neutral and charged excitons in a CdTe/Cd$_{0.63}$Mg$_{0.37}$Te quantum well. The spin-flip scattering is characterized by its dependence on the incident and scattered light polarization as well as on the magnetic field strength and orientation. Model schemes of electric-dipole allowed spin-flip Raman pro…
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Spin-flip Raman scattering of electrons and heavy-holes is studied for resonant excitation of neutral and charged excitons in a CdTe/Cd$_{0.63}$Mg$_{0.37}$Te quantum well. The spin-flip scattering is characterized by its dependence on the incident and scattered light polarization as well as on the magnetic field strength and orientation. Model schemes of electric-dipole allowed spin-flip Raman processes in the exciton complexes are compared to the experimental observations, from which we find that lowering of the exciton symmetry, time of carrier spin relaxation, and mixing between electron states and, respectively, light- and heavy-hole states play an essential role in the scattering. At the exciton resonance, anisotropic exchange interaction induces heavy-hole spin-flip scattering, while acoustic phonon interaction is mainly responsible for the electron spin-flip. In resonance with the positively and negatively charged excitons, anisotropic electron-hole exchange as well as mixed electron states allow spin-flip scattering. Variations in the resonant excitation energy and lattice temperature demonstrate that localization of resident electrons and holes controls the Raman process probability and is also responsible for symmetry reduction. We show that the intensity of the electron spin-flip scattering is strongly affected by the lifetime of the exciton complex and in tilted magnetic fields by the angular dependence of the anisotropic electron-hole exchange interaction.
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Submitted 16 March, 2013; v1 submitted 14 January, 2013;
originally announced January 2013.
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Raman studies on a heavily distorted polycarbonate sample - Raman-Untersuchungen an einer stark deformierten Polycarbonat-Probe
Authors:
J. Debus,
D. Dunker
Abstract:
Differently distorted areas on a polycarbonate sample are studied by means of Raman spectroscopy. The various Raman lines, whose energy shifts range between 200 and 3200 cm-1, are compared for different sample positions with respect to their spectral position, intensity and line width. While a double bonding does not indicate a change in the structural characteristics of the distorted polycarbonat…
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Differently distorted areas on a polycarbonate sample are studied by means of Raman spectroscopy. The various Raman lines, whose energy shifts range between 200 and 3200 cm-1, are compared for different sample positions with respect to their spectral position, intensity and line width. While a double bonding does not indicate a change in the structural characteristics of the distorted polycarbonate, CH-stretching modes show strong Raman intensity differences induced by mechanical stress. Experimental setup modifications are outlooked.
Eine Polycarbonat-Probe wird an unterschiedlich stark deformierten Stellen mittels Raman-Spektroskopie untersucht. Die verschiedenen Raman-Linien mit Raman-Verschiebungen in einem Bereich von 200 bis 3200 cm-1 werden fuer die unterschiedlichen Probenstellen hinsichtlich ihrer spektralen Position, Intensitaet und Breite verglichen. Aus den experimentellen Resultaten geht hervor, dass Doppelbindungen nur unzureichend als Indikator fuer strukturelle Veraenderungen innerhalb des deformierten Polycarbonats dienen. Hingegen zeigen CH-Streckungen deutliche Raman-Intensitaetsunterschiede in Abhaengigkeit von dem Polycarbonat-Verspannungsgrad. Ein Ausblick auf experimentelle Erweiterungen wird gegeben.
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Submitted 29 February, 2012;
originally announced March 2012.
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Influence of the heterointerface sharpness on exciton recombination dynamics in an ensemble of (In,Al)As/AlAs quantum dots with indirect band-gap
Authors:
T. S. Shamirzaev,
J. Debus,
D. S. Abramkin,
D. Dunker,
D. R. Yakovlev,
D. V. Dmitriev,
A. K. Gutakovskii,
L. S. Braginsky,
K. S. Zhuravlev,
M. Bayer
Abstract:
The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical mode…
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The dynamics of exciton recombination in an ensemble of indirect band-gap (In,Al)As/AlAs quantum dots with type-I band alignment is studied. The lifetime of confined excitons which are indirect in momentum-space is mainly influenced by the sharpness of the heterointerface between the (In,Al)As quantum dot and the AlAs barrier matrix. Time-resolved photoluminescence experiments and theoretical model calculations reveal a strong dependence of the exciton lifetime on the thickness of the interface diffusion layer. The lifetime of excitons with a particular optical transition energy varies because this energy is obtained for quantum dots differing in size, shape and composition. The different exciton lifetimes, which result in photoluminescence with non-exponential decay obeying a power-law function, can be described by a phenomenological distribution function, which allows one to explain the photoluminescence decay with one fitting parameter only.
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Submitted 20 July, 2011;
originally announced July 2011.
