High-quality hexagonal boron nitride selectively grown on patterned epigraphene by MOVPE
Authors:
Vishnu Ottapilakkal,
Abhishek Juyal,
Suresh Sundaram,
Phuong Vuong,
Collin Beck,
Noel L. Dudeck,
Amira Bencherif,
Annick Loiseau,
Frédéric Fossard,
Jean-Sebastien Mérot,
David Chapron,
Thomas H. Kauffmann,
Jean-Paul Salvestrini,
Paul L. Voss,
Walt A. de Heer,
Claire Berger,
Abdallah Ougazzaden
Abstract:
Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene non-wetting properties, h-BN growth starts preferentially from the graphene ledges.…
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Hexagonal boron nitride encapsulation is the method of choice for protecting graphene from environmental doping and impurity scattering. It was previously demonstrated that metal-organic vapor phase epitaxy (MOVPE) grows epitaxially ordered, uniform BN layers on epigraphene (graphene grown on SiC). Due to graphene non-wetting properties, h-BN growth starts preferentially from the graphene ledges. We use this fact here to selectively promote growth of high-quality flat h-BN on epigraphene by patterning epigraphene microstructures prior to BN growth. Thin h-BN films (down to 6 nm) grown by MOVPE show smooth and pleated surface morphology on epigraphene, while crumpled BN is observed on the SiC. Cross-sectional high-resolution transmission electron microscopy images and fluorescence imaging confirm the higher BN quality grown on the epigraphene. Transport measurements reveal p-doping as expected from hydrogen intercalation of epigraphene and regions of high and low mobility. This method can be used to produce structurally uniform high-quality h-BN/epigraphene micro/nano scale heterostructure.
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Submitted 7 September, 2024;
originally announced September 2024.
Ultra-high mobility semiconducting epitaxial graphene on silicon carbide
Authors:
Jian Zhao,
Peixun Ji,
Yaqi Li,
Rui Li,
Kaiming Zhang,
Hao Tian,
Kaichen Yu,
Boyue Bian,
Luzhen Hao,
Xue Xiao,
Will Griffin,
Noel Dudeck,
Ramiro Moro,
Lei Ma,
Walt A. de Heer
Abstract:
Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene la…
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Graphene nanoelectronics potential was limited by the lack of an intrinsic bandgap[1] and attempts to tailor a bandgap either by quantum confinement or by chemical functionalization failed to produce a semiconductor with a large enough band gap and a sufficient mobility. It is well known that by evaporating silicon from commercial electronics grade silicon carbide crystals an epitaxial graphene layer forms on the surfaces [2]. The first epigraphene layer to form on the silicon terminated face, known as the buffer layer, is insulating. It is chemically bonded to the SiC and spectroscopic measurements [3] have identified semiconducting signatures on the microscopic domains. However, the bonding to the SiC is disordered and the mobilities are small. Here we demonstrate a quasi-equilibrium annealing method that produces macroscopic atomically flat terraces covered with a well ordered epigraphene buffer layer that has a 0.6 eV bandgap. Room temperature mobilities exceed 5000 cm2/Vs which is much larger than silicon and 20 times larger than the phonon scattering imposed limit of current 2D semiconductors. Critical for nanotechnology, its lattice is aligned with the SiC substrate, it is chemically, mechanically, and thermally robust, and it can be conventionally patterned and seamlessly connected to semimetallic epigraphene making semiconducting epigraphene ideally suited for nanoelectronics.
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Submitted 23 August, 2023;
originally announced August 2023.
