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A 3D investigation of delocalised oxygen two-level defects in Josephson junctions
Authors:
Timothy C. DuBois,
Salvy P. Russo,
Jared H. Cole
Abstract:
Environmental two-level systems (TLS) have been identified as significant decoherence sources in Josephson junction (JJ) based circuits. For such quantum devices to be functional, the removal or control of the TLS is a necessity. Understanding the microscopic origins of the 'strongly coupled' TLS type is one current path of investigation to that end. The delocalized oxygen model suggests the atomi…
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Environmental two-level systems (TLS) have been identified as significant decoherence sources in Josephson junction (JJ) based circuits. For such quantum devices to be functional, the removal or control of the TLS is a necessity. Understanding the microscopic origins of the 'strongly coupled' TLS type is one current path of investigation to that end. The delocalized oxygen model suggests the atomic position of an oxygen atom is spatially delocalized in the oxide forming the JJ barrier. In this report we extend this model from its previous 2+1D construction to a complete 3D description using a Wick-rotated time-dependent Schrodinger equation to solve for time-independent solutions in three dimensions. We compute experimentally observable parameters for phase qubits and compare the results to the 2+1D framework. We devise a Voronoi classification scheme to investigate oxygen atoms delocalizing within strained and non-strained crystalline lattices, as well as realistic atomic positions a JJ amorphous tunnel barrier constructed in previous density functional studies.
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Submitted 21 August, 2015;
originally announced August 2015.
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Constructing ab initio models of ultra-thin Al-AlOx-Al barriers
Authors:
Timothy C. DuBois,
Martin J. Cyster,
George Opletal,
Salvy P. Russo,
Jared H. Cole
Abstract:
The microscopic structure of ultra-thin oxide barriers often plays a major role in modern nano-electronic devices. In the case of superconducting electronic circuits, their operation depends on the electrical non-linearity provided by one or more such oxide layers in the form of ultra-thin tunnel barriers (also known as Josephson junctions). Currently available fabrication techniques manufacture a…
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The microscopic structure of ultra-thin oxide barriers often plays a major role in modern nano-electronic devices. In the case of superconducting electronic circuits, their operation depends on the electrical non-linearity provided by one or more such oxide layers in the form of ultra-thin tunnel barriers (also known as Josephson junctions). Currently available fabrication techniques manufacture an amorphous oxide barrier, which is attributed as a major noise source within the device. The nature of this noise is currently an open question and requires both experimental and theoretical investigation. Here, we present a methodology for constructing atomic scale computational models of Josephson junctions using a combination of molecular mechanics, empirical and ab initio methods. These junctions consist of ultra-thin amorphous aluminium-oxide layers sandwiched between crystalline aluminium. The stability and structure of these barriers as a function of density and stoichiometry are investigated, which we compare to experimentally observed parameters
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Submitted 21 August, 2015; v1 submitted 6 March, 2015;
originally announced March 2015.
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Atomic delocalisation as a microscopic origin of two-level defects in Josephson junctions
Authors:
Timothy C. DuBois,
Salvy P. Russo,
Jared H. Cole
Abstract:
Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we…
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Identifying the microscopic origins of decoherence sources prevalent in Josephson junction based circuits is central to their use as functional quantum devices. Focussing on so called "strongly coupled" two-level defects, we construct a theoretical model using the atomic position of the oxygen which is spatially delocalised in the oxide forming the Josephson junction barrier. Using this model, we investigate which atomic configurations give rise to two-level behaviour of the type seen in experiments. We compute experimentally observable parameters for phase qubits and examine defect response under the effects of applied electric field and strain.
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Submitted 25 August, 2014;
originally announced August 2014.
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Delocalised oxygen as the origin of two-level defects in Josephson junctions
Authors:
Timothy C. DuBois,
Manolo C. Per,
Salvy P. Russo,
Jared H. Cole
Abstract:
One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the…
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One of the key problems facing superconducting qubits and other Josephson junction devices is the decohering effects of bi-stable material defects. Although a variety of phenomenological models exist, the true microscopic origin of these defects remains elusive. For the first time we show that these defects may arise from delocalisation of the atomic position of the oxygen in the oxide forming the Josephson junction barrier. Using a microscopic model, we compute experimentally observable parameters for phase qubits. Such defects are charge neutral but have non-zero response to both applied electric field and strain. This may explain the observed long coherence time of two-level defects in the presence of charge noise, while still coupling to the junction electric field and substrate phonons.
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Submitted 7 December, 2012; v1 submitted 12 June, 2012;
originally announced June 2012.
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Absence of boron aggregates in superconducting silicon confirmed by atom probe tomography
Authors:
K. Hoummada,
F. Dahlem,
T. Kociniewski,
J. Boulmer,
C. Dubois,
G. Prudon,
E. Bustarret,
H. Courtois,
D. Debarre,
D. Mangelinck
Abstract:
Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. Th…
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Superconducting boron-doped silicon films prepared by gas immersion laser doping (GILD) technique are analyzed by atom probe tomography. The resulting three-dimensional chemical composition reveals that boron atoms are incorporated into crystalline silicon in the atomic percent concentration range, well above their solubility limit, without creating clusters or precipitates at the atomic scale. The boron spatial distribution is found to be compatible with local density of states measurements performed by scanning tunneling spectroscopy. These results, combined with the observations of very low impurity level and of a sharp two-dimensional interface between doped and undoped regions show, that the Si:B material obtained by GILD is a well-defined random substitutional alloy endowed with promising superconducting properties.
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Submitted 6 November, 2012; v1 submitted 22 March, 2011;
originally announced March 2011.
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Multi-band Superconductivity in the Chevrel Phases SnMo6S8 and PbMo6S8
Authors:
A. P. Petrović,
R. Lortz,
G. Santi,
C. Berthod,
C. Dubois,
M. Decroux,
A. Demuer,
A. B. Antunes,
A. Paré,
D. Salloum,
P. Gougeon,
M. Potel,
Ø. Fischer
Abstract:
Sub-Kelvin scanning tunnelling spectroscopy in the Chevrel Phases SnMo6S8 and PbMo6S8 reveals two distinct superconducting gaps with Delta_1 = 3 meV, Delta_2 ~ 1.0 meV and Delta_1 = 3.1 meV, Delta_2 ~ 1.4 meV respectively. The gap distribution is strongly anisotropic, with Delta_2 predominantly seen when scanning across unit-cell steps on the (001) sample surface. The spectra are well-fitted by an…
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Sub-Kelvin scanning tunnelling spectroscopy in the Chevrel Phases SnMo6S8 and PbMo6S8 reveals two distinct superconducting gaps with Delta_1 = 3 meV, Delta_2 ~ 1.0 meV and Delta_1 = 3.1 meV, Delta_2 ~ 1.4 meV respectively. The gap distribution is strongly anisotropic, with Delta_2 predominantly seen when scanning across unit-cell steps on the (001) sample surface. The spectra are well-fitted by an anisotropic two-band BCS s-wave gap function. Our spectroscopic data are confirmed by electronic heat capacity measurements which also provide evidence for a twin-gap scenario.
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Submitted 30 June, 2010;
originally announced June 2010.
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Low temperature transition to a superconducting phase in boron-doped silicon films grown on (001)-oriented silicon wafers
Authors:
C. Marcenat,
J. Kacmarcik,
R. Piquerel,
P. Achatz,
G. Prudon,
C. Dubois,
B. Gautier,
J. C. Dupuy,
E. Bustarret,
L. Ortega,
T. Klein,
J. Boulmer,
T. Kociniewski,
D. Debarre
Abstract:
We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased…
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We report on a detailed analysis of the superconducting properties of boron-doped silicon films grown along the 001 direction by Gas Immersion Laser Doping. The doping concentration cB has been varied up to approx. 10 at.% by increasing the number of laser shots to 500. No superconductivity could be observed down to 40mK for doping level below 2.5 at.%. The critical temperature Tc then increased steeply to reach 0.6K for cB = 8 at%. No hysteresis was found for the transitions in magnetic field, which is characteristic of a type II superconductor. The corresponding upper critical field Hc2(0) was on the order of 1000 G, much smaller than the value previously reported by Bustarret et al. in Nature (London) 444, 465 (2006).
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Submitted 2 December, 2009; v1 submitted 28 October, 2009;
originally announced October 2009.
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Scanning Tunneling Spectroscopy in the Superconducting State and Vortex Cores of the beta-pyrochlore KOs2O6
Authors:
C. Dubois,
G. Santi,
I. Cuttat,
C. Berthod,
N. Jenkins,
A. P. Petrović,
A. A. Manuel,
Ø. Fischer,
S. M. Kazakov,
Z. Bukowski,
J. Karpinski
Abstract:
We performed the first scanning tunneling spectroscopy measurements on the pyrochlore superconductor KOs2O6 (Tc = 9.6 K) in both zero magnetic field and the vortex state at several temperatures above 1.95 K. This material presents atomically flat surfaces, yielding spatially homogeneous spectra which reveal fully-gapped superconductivity with a gap anisotropy of 30%. Measurements performed at fi…
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We performed the first scanning tunneling spectroscopy measurements on the pyrochlore superconductor KOs2O6 (Tc = 9.6 K) in both zero magnetic field and the vortex state at several temperatures above 1.95 K. This material presents atomically flat surfaces, yielding spatially homogeneous spectra which reveal fully-gapped superconductivity with a gap anisotropy of 30%. Measurements performed at fields of 2 and 6 T display a hexagonal Abrikosov flux line lattice. From the shape of the vortex cores, we extract a coherence length of 31-40 Å, in agreement with the value derived from the upper critical field Hc2. We observe a reduction in size of the vortex cores (and hence the coherence length) with increasing field which is consistent with the unexpectedly high and unsaturated upper critical field reported.
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Submitted 4 April, 2007;
originally announced April 2007.
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Node-like excitations in superconducting PbMo6S8 probed by scanning tunneling spectroscopy
Authors:
C. Dubois,
A. P. Petrovic,
G. Santi,
C. Berthod,
A. A. Manuel,
M. Decroux,
O. Fischer,
M. Potel,
R. Chevrel
Abstract:
We present the first scanning tunneling spectroscopy study on the Chevrel phase PbMo6S8, an extreme type II superconductor with a coherence length only slightly larger than in high-Tc cuprates. Tunneling spectra measured on atomically flat terraces are spatially homogeneous and show well-defined coherence peaks. The low-energy spectral weight, the zero bias conductance and the temperature depend…
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We present the first scanning tunneling spectroscopy study on the Chevrel phase PbMo6S8, an extreme type II superconductor with a coherence length only slightly larger than in high-Tc cuprates. Tunneling spectra measured on atomically flat terraces are spatially homogeneous and show well-defined coherence peaks. The low-energy spectral weight, the zero bias conductance and the temperature dependence of the gap are incompatible with a conventional isotropic s-wave interpretation, revealing the presence of low-energy excitations in the superconducting state. We show that our data are consistent with the presence of nodes in the superconducting gap.
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Submitted 12 February, 2007;
originally announced February 2007.
