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Thickness Scaling Effect on Interfacial Barrier and Electrical Contact to Two-Dimensional MoS2 Layers
Authors:
Song-Lin Li,
K. Komatsu,
Shu Nakaharai,
Yen-Fu Lin,
M. Yamamoto,
X. F. Duan,
K. Tsukagoshi
Abstract:
Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thic…
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Understanding the interfacial electrical properties between metallic electrodes and low dimensional semiconductors is essential for both fundamental science and practical applications. Here we report the observation of thickness reduction induced crossover of electrical contact at Au/MoS2 interfaces. For MoS2 thicker than 5 layers, the contact resistivity slightly decreases with reducing MoS2 thickness. By contrast, the contact resistivity sharply increases with reducing MoS2 thickness below 5 layers, mainly governed by the quantum confinement effect. It is found that the interfacial potential barrier can be finely tailored from 0.3 to 0.6 eV by merely varying MoS2 thickness. A full evolution diagram of energy level alignment is also drawn to elucidate the thickness scaling effect. The finding of tailoring interfacial properties with channel thickness represents a useful approach controlling the metal/semiconductor interfaces which may result in conceptually innovative functionalities.
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Submitted 15 February, 2015; v1 submitted 7 October, 2014;
originally announced October 2014.
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Ferroelectric switched all-metallic-oxide $p$-$n$ junctions
Authors:
J. Yuan,
H. Wu,
L. Zhao,
K. Jin,
L. X. Cao,
B. Y. Zhu,
S. J. Zhu,
J. P. Zhong,
J. Miao,
H. Yang,
B. Xu,
X. Y. Qi,
Y. Han,
X. G. Qiu,
X. F. Duan,
B. R. Zhao
Abstract:
We report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type) metallic CMR manganite (La,Sr)MnO$_3$ (LSMO) junctions. In contrast with the previous semiconductor $p$-$n$ ($p$-$I$-$n$) junctions which are switched by the buil…
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We report the first formation of the metallic $p$-$n$ junctions, the ferroelectric (Ba,Sr)TiO$_3$ (BST) switched optimally electron-doped ($n$-type) metallic T'-phase superconductor, (La,Ce)$_2$CuO$_4$ (LCCO), and hole-doped ($p$-type) metallic CMR manganite (La,Sr)MnO$_3$ (LSMO) junctions. In contrast with the previous semiconductor $p$-$n$ ($p$-$I$-$n$) junctions which are switched by the built-in field $V_0$, the present metallic oxides $p$-$I$-$n$ junctions are switched by double barrier fields, the built-in field $V_0$, and the ferroelectric reversed polarized field $V_{rp}$, both take together to lead the junctions to possess definite parameters, such as definite negligible reversed current ($10^{-9}$ A), large breakdown voltage ($>$7 V), and ultrahigh rectification ($>2\times10^4$) in the bias voltage 1.2 V to 2.0 V and temperature range from 5 to over 300 K. The related transport feature, barrier size effect, and temperature effect are also observed and defined.
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Submitted 19 November, 2006;
originally announced November 2006.
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Coexistence of Superconductivity and Ferromagnetism in Dilute Co-doped $La_{1.89} Ce_{0.11} Cu O_{4\pm\d}$ System
Authors:
K. Jin,
J. Yuan,
L. Zhao,
H. Wu,
X. Y. Qi,
B. Y. Zhu,
L. X. Cao,
X. G. Qiu,
B. Xu,
X. F. Duan,
B. R. Zhao
Abstract:
Thin films of the optimally electron-doped $T'$-phase superconductor La$_{1.89}$Ce$_{0.11}$CuO$_{4\pm \d}$ are investigated by dilute Co doping, formed as La$_{1.89}$Ce$_{0.11}$(Cu$_{1-x}$Co$_{x}$)O$_{4\pm\d}$ (LCCCO) with $x$ = 0.01 -- 0.05. The following results are obtained for the first time: for the whole dilute Co doping range, LCCCO thin films show long-range ferromagnetic ordering at the…
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Thin films of the optimally electron-doped $T'$-phase superconductor La$_{1.89}$Ce$_{0.11}$CuO$_{4\pm \d}$ are investigated by dilute Co doping, formed as La$_{1.89}$Ce$_{0.11}$(Cu$_{1-x}$Co$_{x}$)O$_{4\pm\d}$ (LCCCO) with $x$ = 0.01 -- 0.05. The following results are obtained for the first time: for the whole dilute Co doping range, LCCCO thin films show long-range ferromagnetic ordering at the temperature range from 5 K to 300 K, which is likely due to the RKKY interaction; in the very dilute Co doping, $x$ = 0.01 and 0.02, the superconductivity is maitained, the system shows the coexistence of superconductivity and ferromagnetism in the CuO$_{2}$ plane. This may be based on the nature of the charge carriers in electron-doped high-$T_{c}$ cuprate superconductors.
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Submitted 15 August, 2006;
originally announced August 2006.
