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Two-Terminal Electrical Detection of the Néel Vector via Longitudinal Antiferromagnetic Nonreciprocal Transport
Authors:
Guozhi Long,
Hui Zeng,
Mingxiang Pan,
Wenhui Duan,
Huaqing Huang
Abstract:
We propose a robust two-terminal electrical readout scheme for detecting the Néel vector orientation in antiferromagnetic (AFM) materials by leveraging longitudinal nonreciprocal transport driven by quantum metric dipoles. Unlike conventional readout mechanisms, our approach does not require spin-polarized electrodes, tunneling junctions, or multi-terminal geometries, offering a universal and scal…
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We propose a robust two-terminal electrical readout scheme for detecting the Néel vector orientation in antiferromagnetic (AFM) materials by leveraging longitudinal nonreciprocal transport driven by quantum metric dipoles. Unlike conventional readout mechanisms, our approach does not require spin-polarized electrodes, tunneling junctions, or multi-terminal geometries, offering a universal and scalable solution for AFM spintronics. As examples, we demonstrate pronounced second-order longitudinal nonlinear conductivity (LNC) in two-dimensional (2D) MnS and 3D CuMnAs, both of which exhibit clear sign reversal of LNC under 180$^\circ$ Néel vector reorientation. We show that this LNC is predominantly governed by the intrinsic, relaxation-time-independent quantum metric mechanism rather than the extrinsic nonlinear Drude effect. Our findings provide a practical and material-general pathway for electrically reading AFM memory states, with promising implications for next-generation AFM spintronic technologies.
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Submitted 20 May, 2025;
originally announced May 2025.
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Topological surface states in γ-PtBi$_2$ evidenced by scanning tunneling microscopy
Authors:
Yunkai Guo,
Jingming Yan,
Wen-Han Dong,
Yongkai Li,
Yucong Peng,
Xuetao Di,
Caizhen Li,
Zhiwei Wang,
Yong Xu,
Peizhe Tang,
Yugui Yao,
Wenhui Duan,
Qi-Kun Xue,
Wei Li
Abstract:
For the application of topological materials, the specific location of their topological surface states with respect to the Fermi level are important. γ-PtBi2 has been demonstrated to be a Weyl semimetal possessing superconducting Fermi arcs by photoemission spectroscopy. However, the evidence of its topological surface states is lacking by scanning tunneling microscopy (STM), which should be rath…
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For the application of topological materials, the specific location of their topological surface states with respect to the Fermi level are important. γ-PtBi2 has been demonstrated to be a Weyl semimetal possessing superconducting Fermi arcs by photoemission spectroscopy. However, the evidence of its topological surface states is lacking by scanning tunneling microscopy (STM), which should be rather sensitive to detect the surface states. Here, we show multiple STM evidences for the existence of topological surface states in γ-PtBi2. We observe not only the step-edge and screw dislocation induced quasiparticle interference fringes, originating from the electron scatterings between the Fermi arcs of γ-PtBi2, but also the back-scattering prohibition related to the spin-flip process, which is the direct evidence for the topological nature of the surface states. Moreover, we demonstrate that the topological surface states are precisely located over a narrow energy range near the Fermi level, within which sharply enhanced intensity and slow spatial decay of quasiparticle interference are observed.
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Submitted 15 May, 2025;
originally announced May 2025.
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SA-GAT-SR: Self-Adaptable Graph Attention Networks with Symbolic Regression for high-fidelity material property prediction
Authors:
Junchi Liu,
Ying Tang,
Sergei Tretiak,
Wenhui Duan,
Liujiang Zhou
Abstract:
Recent advances in machine learning have demonstrated an enormous utility of deep learning approaches, particularly Graph Neural Networks (GNNs) for materials science. These methods have emerged as powerful tools for high-throughput prediction of material properties, offering a compelling enhancement and alternative to traditional first-principles calculations. While the community has predominantl…
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Recent advances in machine learning have demonstrated an enormous utility of deep learning approaches, particularly Graph Neural Networks (GNNs) for materials science. These methods have emerged as powerful tools for high-throughput prediction of material properties, offering a compelling enhancement and alternative to traditional first-principles calculations. While the community has predominantly focused on developing increasingly complex and universal models to enhance predictive accuracy, such approaches often lack physical interpretability and insights into materials behavior. Here, we introduce a novel computational paradigm, Self-Adaptable Graph Attention Networks integrated with Symbolic Regression (SA-GAT-SR), that synergistically combines the predictive capability of GNNs with the interpretative power of symbolic regression. Our framework employs a self-adaptable encoding algorithm that automatically identifies and adjust attention weights so as to screen critical features from an expansive 180-dimensional feature space while maintaining O(n) computational scaling. The integrated SR module subsequently distills these features into compact analytical expressions that explicitly reveal quantum-mechanically meaningful relationships, achieving 23 times acceleration compared to conventional SR implementations that heavily rely on first principle calculations-derived features as input. This work suggests a new framework in computational materials science, bridging the gap between predictive accuracy and physical interpretability, offering valuable physical insights into material behavior.
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Submitted 22 May, 2025; v1 submitted 1 May, 2025;
originally announced May 2025.
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Band-spin-valley coupled exciton physics in antiferromagnetic MnPS$_3$
Authors:
Dan Wang,
Haowei Chen,
Yu Pang,
Xiaolong Zou,
Wenhui Duan
Abstract:
The introduction of intrinsic magnetic order in two-dimensional (2D) semiconductors offers great opportunities for investigating correlated excitonic phenomena. Here, we employ full-spinor GW plus Bethe-Salpeter equation methodology to reveal rich exciton physics in a prototypical 2D Néel-type antiferromagnetic semiconductor MnPS$_3$, enabled by the interplay among inverted dispersion of the secon…
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The introduction of intrinsic magnetic order in two-dimensional (2D) semiconductors offers great opportunities for investigating correlated excitonic phenomena. Here, we employ full-spinor GW plus Bethe-Salpeter equation methodology to reveal rich exciton physics in a prototypical 2D Néel-type antiferromagnetic semiconductor MnPS$_3$, enabled by the interplay among inverted dispersion of the second valence band, spin-valley coupling and magnetic order. The negative hole mass increases the reduced mass of the lowest-energy bright exciton, leading to exchange splitting enhancement of the bright exciton relative to band-edge dark exciton. Notably, such splitting couples with spontaneous valley polarization to generate distinct excitonic fine structure between $K$ and $-K$ valleys, which dictate distinct relaxation behaviors. Crucially, magnetic order transition from Néel antiferromagnetic to ferromagnetic state induces significant quasiparticle band structure reconstruction and excitonic transitions modification, with low-energy optical excitations being exclusively contributed by majority-spin channel. These findings establish 2D antiferromagnetic semiconductors as an intriguing platform to study band-spin-valley coupled exciton physics.
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Submitted 20 April, 2025;
originally announced April 2025.
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Giant Rashba splitting in PtTe/PtTe$_2$ heterostructure
Authors:
Runfa Feng,
Yang Zhang,
Jiaheng Li,
Qian Li,
Changhua Bao,
Hongyun Zhang,
Wanying Chen,
Xiao Tang,
Ken Yaegashi,
Katsuaki Sugawara,
Takafumi Sato,
Wenhui Duan,
Pu Yu,
Shuyun Zhou
Abstract:
Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic applications. Here, we report a strategy to achieve inversion symmetry breaking from a centrosymmetric transition metal dichalcogenide (TMDC) bilayer PtTe$_2$, leading to…
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Achieving a large spin splitting is highly desirable for spintronic devices, which often requires breaking of the inversion symmetry. However, many atomically thin films are centrosymmetric, making them unsuitable for spintronic applications. Here, we report a strategy to achieve inversion symmetry breaking from a centrosymmetric transition metal dichalcogenide (TMDC) bilayer PtTe$_2$, leading to a giant Rashba spin splitting. Specifically, the thermal annealing turns one layer of PtTe$_2$ sample into a transition metal monochalcogenide (TMMC) PtTe through Te extraction, thus forming PtTe/PtTe$_2$ heterostructure with inversion symmetry breaking. In the naturally-formed PtTe/PtTe$_2$ heterostructure, we observe a giant Rashba spin splitting with Rashba coefficient of $α_{R}$ = 1.8 eV$\cdot$$Å$, as revealed by spin- and angle-resolved photoemission spectroscopy measurements. Our work demonstrates a convenient and effective pathway for achieving pronounced Rashba splitting in centrosymmetric TMDC thin films by creating TMMC/TMDC heterostructure, thereby extending their potential applications to spintronics.
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Submitted 8 April, 2025;
originally announced April 2025.
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Moiré enhanced flat band in rhombohedral graphene
Authors:
Hongyun Zhang,
Jinxi Lu,
Kai Liu,
Yijie Wang,
Fei Wang,
Size Wu,
Wanying Chen,
Xuanxi Cai,
Kenji Watanabe,
Takashi Taniguchi,
Jose Avila,
Pavel Dudin,
Matthew D. Watson,
Alex Louat,
Takafumi Sato,
Pu Yu,
Wenhui Duan,
Zhida Song,
Guorui Chen,
Shuyun Zhou
Abstract:
The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene…
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The fractional quantum anomalous Hall effect (FQAHE) is a fascinating emergent quantum state characterized by fractionally charged excitations in the absence of magnetic field,which could arise from the intricate interplay between electron correlation, nontrivial topology and spontaneous time-reversal symmetry breaking. Recently, FQAHE has been realized in aligned rhombohedral pentalayer graphene on BN superlattice (aligned R5G/BN), where the topological flat band is modulated by the moiré potential. However, intriguingly, the FQAHE is observed only when electrons are pushed away from the moiré interface. The apparently opposite implications from these experimental observations, along with different theoretical models, have sparked intense debates regarding the role of the moiré potential. Unambiguous experimental observation of the topological flat band as well as moiré bands with energy and momentum resolved information is therefore critical to elucidate the underlying mechanism. Here by performing nanospot angle-resolved photoemission spectroscopy (NanoARPES) measurements, we directly reveal the topological flat band electronic structures of R5G, from which key hopping parameters essential for determining the fundamental electronic structure of rhombohedral graphene are extracted. Moreover, a comparison of electronic structures between aligned and non-aligned samples reveals that the moiré potential plays a pivotal role in enhancing the topological flat band in the aligned sample. Our study provides experimental guiding lines to narrow down the phase space of rhombohedral graphene, laying an important foundation for understanding exotic quantum phenomena in this emerging platform.
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Submitted 8 April, 2025;
originally announced April 2025.
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Long-Range Spin-Orbit-Coupled Magnetoelectricity in Type-II Multiferroic NiI$_2$
Authors:
Weiyi Pan,
Zefeng Chen,
Dezhao Wu,
Weiqin Zhu,
Zhiming Xu,
Lianchuang Li,
Junsheng Feng,
Bing-Lin Gu,
Wenhui Duan,
Changsong Xu
Abstract:
Type-II multiferroics, where spin order induces ferroelectricity, exhibit strong magnetoelectric coupling. However, for the typical 2D type-II multiferroic NiI$_2$, the underlying magnetoelectric mechanism remains unclear. Here, applying generalized spin-current model, together with first-principles calculations and a tight-binding approach, we build a comprehensive magnetoelectric model for spin-…
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Type-II multiferroics, where spin order induces ferroelectricity, exhibit strong magnetoelectric coupling. However, for the typical 2D type-II multiferroic NiI$_2$, the underlying magnetoelectric mechanism remains unclear. Here, applying generalized spin-current model, together with first-principles calculations and a tight-binding approach, we build a comprehensive magnetoelectric model for spin-induced polarization. Such model reveals that the spin-orbit coupling extends its influence to the third-nearest neighbors, whose contribution to polarization rivals that of the first-nearest neighbors. By analyzing the orbital-resolved contributions to polarization, our tight-binding model reveals that the long-range magnetoelectric coupling is enabled by the strong $e_g$-$p$ hopping of NiI$_2$. Monte Carlo simulations further predict a Bloch-type magnetic skyrmion lattice at moderate magnetic fields, accompanied by polar vortex arrays. These findings can guide the discovery and design of strongly magnetoelectric multiferroics.
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Submitted 24 February, 2025; v1 submitted 23 February, 2025;
originally announced February 2025.
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Spin-chirality-driven second-harmonic generation in two-dimensional magnet CrSBr
Authors:
Dezhao Wu,
Yong Xu,
Meng Ye,
Wenhui Duan
Abstract:
The interplay between magnetism and light can create abundant optical phenomena. Here, we demonstrate the emergence of an unconventional magnetization-induced second-harmonic generation (MSHG) stemming from vector spin chirality, denoted as chiral second-harmonic generation (SHG). Taking the antiferromagnetic (AFM) CrSBr bilayer as a prototype, we theoretically show that, via spin canting, the chi…
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The interplay between magnetism and light can create abundant optical phenomena. Here, we demonstrate the emergence of an unconventional magnetization-induced second-harmonic generation (MSHG) stemming from vector spin chirality, denoted as chiral second-harmonic generation (SHG). Taking the antiferromagnetic (AFM) CrSBr bilayer as a prototype, we theoretically show that, via spin canting, the chiral SHG can be continuously tuned from zero to a value one order of magnitude larger than its intrinsic MSHG. Chiral SHG is found to be proportional to spin chirality and spin-canting-induced electric polarization, while intrinsic MSHG is proportional to the Néel vector, demonstrating their different physical mechanisms. Additionally, we reveal a unique interference effect between these two types of MSHG under the reversal of spin-canting direction, generating a giant modulation of SHG signals. Our work not only uncovers a unique SHG with exceptional tunability but also promotes the applications of AFM optical devices and magnetoelectric detection techniques.
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Submitted 5 April, 2025; v1 submitted 16 February, 2025;
originally announced February 2025.
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Floquet-Volkov interference in a semiconductor
Authors:
Changhua Bao,
Haoyuan Zhong,
Benshu Fan,
Xuanxi Cai,
Fei Wang,
Shaohua Zhou,
Tianyun Lin,
Hongyun Zhang,
Pu Yu,
Peizhe Tang,
Wenhui Duan,
Shuyun Zhou
Abstract:
Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulatio…
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Intense light-field can dress both Bloch electrons inside crystals and photo-emitted free electrons in the vacuum, dubbed as Floquet and Volkov states respectively. These quantum states can further interfere coherently, modulating light-field dressed states. Here, we report experimental evidence of the Floquet-Volkov interference in a semiconductor - black phosphorus. A highly asymmetric modulation of the spectral weight is observed for the Floquet-Volkov states, and such asymmetry can be further controlled by rotating the pump polarization. Our work reveals the quantum interference between different light-field dressed electronic states, providing insights for material engineering on the ultrafast timescale.
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Submitted 11 February, 2025;
originally announced February 2025.
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Floquet optical selection rules in black phosphorus
Authors:
Benshu Fan,
Umberto De Giovannini,
Hannes Hübener,
Shuyun Zhou,
Wenhui Duan,
Angel Rubio,
Peizhe Tang
Abstract:
The optical selection rules endorsed by symmetry are crucial for understanding the optical properties of quantum materials and the associated ultrafast spectral phenomena. Herein, we introduce momentum-resolved Floquet optical selection rules using the group theory to elucidate the pump-probe photoemission spectral distributions of monolayer black phosphorus (BP), which are governed by the symmetr…
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The optical selection rules endorsed by symmetry are crucial for understanding the optical properties of quantum materials and the associated ultrafast spectral phenomena. Herein, we introduce momentum-resolved Floquet optical selection rules using the group theory to elucidate the pump-probe photoemission spectral distributions of monolayer black phosphorus (BP), which are governed by the symmetries of both the material and the lasers. Using time-dependent density functional theory (TDDFT), we further investigate the dynamical evolution of Floquet(-Volkov) states in the photoemission spectra of monolayer BP, revealing their spectral weights at specific momenta for each sideband. These observations are comprehensively explained by the proposed Floquet optical selection rules. Our framework not only clarifies experimental photoemission spectra but also uncovers novel characteristics under different pump-probe configurations. Our results are expected to deepen the understanding of light-induced ultrafast spectra in BP and can be further extended to other Floquet systems.
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Submitted 26 January, 2025;
originally announced January 2025.
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Transfer learning electronic structure: millielectron volt accuracy for sub-million-atom moiré semiconductor
Authors:
Ting Bao,
Ning Mao,
Wenhui Duan,
Yong Xu,
Adrian Del Maestro,
Yang Zhang
Abstract:
The integration of density functional theory (DFT) with machine learning enables efficient \textit{ab initio} electronic structure calculations for ultra-large systems. In this work, we develop a transfer learning framework tailored for long-wavelength moiré systems. To balance efficiency and accuracy, we adopt a two-step transfer learning strategy: (1) the model is pre-trained on a large dataset…
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The integration of density functional theory (DFT) with machine learning enables efficient \textit{ab initio} electronic structure calculations for ultra-large systems. In this work, we develop a transfer learning framework tailored for long-wavelength moiré systems. To balance efficiency and accuracy, we adopt a two-step transfer learning strategy: (1) the model is pre-trained on a large dataset of computationally inexpensive non-twisted structures until convergence, and (2) the network is then fine-tuned using a small set of computationally expensive twisted structures. Applying this method to twisted MoTe$_2$, the neural network model generates the resulting Hamiltonian for a 1000-atom system in 200 seconds, achieving a mean absolute error below 0.1 meV. To demonstrate $O(N)$ scalability, we model nanoribbon systems with up to 0.25 million atoms ($\sim9$ million orbitals), accurately capturing edge states consistent with predicted Chern numbers. This approach addresses the challenges of accuracy, efficiency, and scalability, offering a viable alternative to conventional DFT and enabling the exploration of electronic topology in large scale moiré systems towards simulating realistic device architectures.
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Submitted 21 January, 2025;
originally announced January 2025.
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ABACUS: An Electronic Structure Analysis Package for the AI Era
Authors:
Weiqing Zhou,
Daye Zheng,
Qianrui Liu,
Denghui Lu,
Yu Liu,
Peize Lin,
Yike Huang,
Xingliang Peng,
Jie J. Bao,
Chun Cai,
Zuxin Jin,
Jing Wu,
Haochong Zhang,
Gan Jin,
Yuyang Ji,
Zhenxiong Shen,
Xiaohui Liu,
Liang Sun,
Yu Cao,
Menglin Sun,
Jianchuan Liu,
Tao Chen,
Renxi Liu,
Yuanbo Li,
Haozhi Han
, et al. (28 additional authors not shown)
Abstract:
ABACUS (Atomic-orbital Based Ab-initio Computation at USTC) is an open-source software for first-principles electronic structure calculations and molecular dynamics simulations. It mainly features density functional theory (DFT) and is compatible with both plane-wave basis sets and numerical atomic orbital basis sets. ABACUS serves as a platform that facilitates the integration of various electron…
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ABACUS (Atomic-orbital Based Ab-initio Computation at USTC) is an open-source software for first-principles electronic structure calculations and molecular dynamics simulations. It mainly features density functional theory (DFT) and is compatible with both plane-wave basis sets and numerical atomic orbital basis sets. ABACUS serves as a platform that facilitates the integration of various electronic structure methods, such as Kohn-Sham DFT, stochastic DFT, orbital-free DFT, and real-time time-dependent DFT, etc. In addition, with the aid of high-performance computing, ABACUS is designed to perform efficiently and provide massive amounts of first-principles data for generating general-purpose machine learning potentials, such as DPA models. Furthermore, ABACUS serves as an electronic structure platform that interfaces with several AI-assisted algorithms and packages, such as DeePKS-kit, DeePMD, DP-GEN, DeepH, DeePTB, etc.
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Submitted 20 January, 2025; v1 submitted 15 January, 2025;
originally announced January 2025.
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Light-induced ultrafast glide-mirror symmetry breaking in black phosphorus
Authors:
Changhua Bao,
Fei Wang,
Haoyuan Zhong,
Shaohua Zhou,
Tianyun Lin,
Hongyun Zhang,
Xuanxi Cai,
Wenhui Duan,
Shuyun Zhou
Abstract:
Symmetry breaking plays an important role in fields of physics, ranging from particle physics to condensed matter physics. In solid-state materials, phase transitions are deeply linked to the underlying symmetry breakings, resulting in a rich variety of emergent phases. Such symmetry breakings are often induced by controlling the chemical composition and temperature or applying an electric field a…
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Symmetry breaking plays an important role in fields of physics, ranging from particle physics to condensed matter physics. In solid-state materials, phase transitions are deeply linked to the underlying symmetry breakings, resulting in a rich variety of emergent phases. Such symmetry breakings are often induced by controlling the chemical composition and temperature or applying an electric field and strain, etc. In this work, we demonstrate an ultrafast glide-mirror symmetry breaking in black phosphorus through Floquet engineering. Upon near-resonance pumping, a light-induced full gap opening is observed at the glide-mirror symmetry protected nodal ring, suggesting light-induced breaking of the glide-mirror symmetry. Moreover, the full gap is observed only in the presence of the light-field and disappears almost instantaneously ($\ll$100 fs) when the light-field is turned off, suggesting the ultrafast manipulation of the symmetry and its Floquet engineering origin. This work not only demonstrates light-matter interaction as an effective way to realize ultrafast symmetry breaking in solid-state materials, but also moves forward towards the long-sought Floquet topological phases.
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Submitted 9 December, 2024;
originally announced December 2024.
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Manipulating the symmetry of photon-dressed electronic states
Authors:
Changhua Bao,
Michael Schüler,
Teng Xiao,
Fei Wang,
Haoyuan Zhong,
Tianyun Lin,
Xuanxi Cai,
Tianshuang Sheng,
Xiao Tang,
Hongyun Zhang,
Pu Yu,
Zhiyuan Sun,
Wenhui Duan,
Shuyun Zhou
Abstract:
Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry o…
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Strong light-matter interaction provides opportunities for tailoring the physical properties of quantum materials on the ultrafast timescale by forming photon-dressed electronic states, i.e., Floquet-Bloch states. While the light field can in principle imprint its symmetry properties onto the photon-dressed electronic states, so far, how to experimentally detect and further engineer the symmetry of photon-dressed electronic states remains elusive. Here by utilizing time- and angle-resolved photoemission spectroscopy (TrARPES) with polarization-dependent study, we directly visualize the parity symmetry of Floquet-Bloch states in black phosphorus. The photon-dressed sideband exhibits opposite photoemission intensity to the valence band at the $Γ$ point,suggesting a switch of the parity induced by the light field. Moreover, a "hot spot" with strong intensity confined near $Γ$ is observed, indicating a momentum-dependent modulation beyond the parity switch. Combining with theoretical calculations, we reveal the light-induced engineering of the wave function of the Floquet-Bloch states as a result of the hybridization between the conduction and valence bands with opposite parities, and show that the "hot spot" is intrinsically dictated by the symmetry properties of black phosphorus. Our work suggests TrARPES as a direct probe for the parity of the photon-dressed electronic states with energy- and momentum-resolved information, providing an example for engineering the wave function and symmetry of such photon-dressed electronic states via Floquet engineering.
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Submitted 9 December, 2024;
originally announced December 2024.
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Magnetorotons in Moiré Fractional Chern Insulators
Authors:
Xiaoyang Shen,
Chonghao Wang,
Xiaodong Hu,
Ruiping Guo,
Hong Yao,
Chong Wang,
Wenhui Duan,
Yong Xu
Abstract:
The discovery of fractional Chern insulators (FCIs) unlocks exciting opportunities to explore emergent physical excitations arising from topological and geometric effects in novel phases of quantum matter. Here we investigate the intraband neutral excitations, namely magnetorotons, in moiré FCIs within twisted $\rm{MoTe}_2$ by applying the Girvin, MacDonald, and Platzman (GMP) ansatz together with…
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The discovery of fractional Chern insulators (FCIs) unlocks exciting opportunities to explore emergent physical excitations arising from topological and geometric effects in novel phases of quantum matter. Here we investigate the intraband neutral excitations, namely magnetorotons, in moiré FCIs within twisted $\rm{MoTe}_2$ by applying the Girvin, MacDonald, and Platzman (GMP) ansatz together with the method of dynamical geometric response. We reveal the universal existence of the finite-momentum magnetorotons in moiré FCIs and predict their characteristic scales. Furthermore, we explore the geometric nature of magnetorotons in the long-wavelength limit, identifying their gapped chiral nature with angular momentum-2, which originates from the momentum-space incompressibility of FCIs. Utilizing the excellent tunability of moiré systems, we extend our analysis to other incompressible phases and uncover the dynamical properties of geometric excitations influenced by quantum phase transitions. Finally, we provide experimental proposals for detecting and advancing the study of intraband neutral excitations in moiré FCIs.
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Submitted 21 February, 2025; v1 submitted 2 December, 2024;
originally announced December 2024.
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Correlated topological flat bands in rhombohedral graphite
Authors:
Hongyun Zhang,
Qian Li,
Michael G. Scheer,
Renqi Wang,
Chuyi Tuo,
Nianlong Zou,
Wanying Chen,
Jiaheng Li,
Xuanxi Cai,
Changhua Bao,
Ming-Rui Li,
Ke Deng,
Kenji Watanabe,
Takashi Taniguchi,
Mao Ye,
Peizhe Tang,
Yong Xu,
Pu Yu,
Jose Avila,
Pavel Dudin,
Jonathan D. Denlinger,
Hong Yao,
Biao Lian,
Wenhui Duan,
Shuyun Zhou
Abstract:
Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk R…
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Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk RG, which are topologically protected by bulk helical Dirac nodal lines via the bulk-boundary correspondence. Moreover, upon {\it in situ} electron doping, the surface TFBs show a splitting with exotic doping evolution, with an order-of-magnitude increase in the bandwidth of the lower split band, and pinning of the upper band near the Fermi level. These experimental observations together with Hartree-Fock calculations suggest that correlation effects are important in this system. Our results demonstrate RG as a new platform for investigating the rich interplay between nontrivial band topology, correlation effects, and interaction-driven symmetry-broken states.
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Submitted 12 November, 2024;
originally announced November 2024.
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Geometrical Nonlinear Hall Effect Induced by Lorentz Force
Authors:
Junjie Yao,
Yizhou Liu,
Wenhui Duan
Abstract:
The recently discovered nonlinear Hall (NLH) effect arises either without external magnetic field (type-I) or with an in-plane magnetic field (type-II). In this work we propose a new type of geometrical nonlinear Hall effect with an out-of-plane magnetic field (type-III) induced by the combination of Lorentz force and anomalous electronic velocity. The type-III NLH effect is proportional to the mo…
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The recently discovered nonlinear Hall (NLH) effect arises either without external magnetic field (type-I) or with an in-plane magnetic field (type-II). In this work we propose a new type of geometrical nonlinear Hall effect with an out-of-plane magnetic field (type-III) induced by the combination of Lorentz force and anomalous electronic velocity. The type-III NLH effect is proportional to the more refined structures of Bloch wave functions, i.e., the dipole moment of square of Berry curvature, thus becoming prominent near the band crossings or anticrossings. Our effective model analysis and first-principles calculations show that gate-tuned MnBi$_2$Te$_4$ thin film under uniaxial strain is an ideal platform to observe this effect. Especially, giant unidirectional magnetoresistance can occur in this material, based on which an efficient electrical transistor device prototype can be built. Finally a symmetry analysis indicates that type-III NLH effect has unique symmetry properties stemming from Berry curvature square dipole, which is different from other previously reported NLH effects and can exist in a wider class of magnetic crystals. Our study offers new paradigms for nonlinear electronics.
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Submitted 4 September, 2024;
originally announced September 2024.
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Deep Band Crossings Enhanced Nonlinear Optical Effects
Authors:
Nianlong Zou,
He Li,
Meng Ye,
Haowei Chen,
Minghui Sun,
Ruiping Guo,
Yizhou Liu,
Bing-Lin Gu,
Wenhui Duan,
Yong Xu,
Chong Wang
Abstract:
Nonlinear optical (NLO) effects in materials with band crossings have attracted significant research interests due to the divergent band geometric quantities around these crossings. Most current research has focused on band crossings between the valence and conduction bands. However, such crossings are absent in insulators, which are more relevant for NLO applications. In this work, we demonstrate…
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Nonlinear optical (NLO) effects in materials with band crossings have attracted significant research interests due to the divergent band geometric quantities around these crossings. Most current research has focused on band crossings between the valence and conduction bands. However, such crossings are absent in insulators, which are more relevant for NLO applications. In this work, we demonstrate that NLO effects can be significantly enhanced by band crossings within the valence or conduction bands, which we designate as "deep band crossings" (DBCs). As an example, in two dimensions, we show that shift conductivity can be substantially enhanced or even divergent due to a mirror-protected "deep Dirac nodal point". In three dimensions, we propose GeTe as an ideal material where shift conductivity is enhanced by "deep Dirac nodal lines". The ubiquity of this enhancement is further confirmed by high-throughput calculations. Other types of DBCs and NLO effects are also discussed. By manipulating band crossings between arbitrary bands, our work offers a simple, practical, and universal way to greatly enhance NLO effects.
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Submitted 3 September, 2024;
originally announced September 2024.
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Stable magic angle in twisted Kane-Mele materials
Authors:
Cheng Xu,
Yong Xu,
Wenhui Duan,
Yang Zhang
Abstract:
We propose that flat bands and van Hove singularities near the magic angle can be stabilized against angle disorder in the twisted Kane-Mele model. With continuum model and maximally localized Wannier function approaches, we identify a quadratic dispersion relationship between the bandwidth, interaction parameters versus the twist angle, in contrast to twisted bilayer graphene (TBG). Introducing K…
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We propose that flat bands and van Hove singularities near the magic angle can be stabilized against angle disorder in the twisted Kane-Mele model. With continuum model and maximally localized Wannier function approaches, we identify a quadratic dispersion relationship between the bandwidth, interaction parameters versus the twist angle, in contrast to twisted bilayer graphene (TBG). Introducing Kane-Mele spin-orbit coupling to TBG greatly reduces the fractional Chern insulator indicator and enhances the stability of fractional Chern states near the magic angle, as confirmed by exact diagonalization calculations. Moreover, in twisted bilayer Pt$_2$HgSe$_3$ with intrinsic Kane-Mele spin-orbit coupling, we identify a topological flat band at a large twist angle around 4 degrees.
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Submitted 28 October, 2024; v1 submitted 13 August, 2024;
originally announced August 2024.
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Fractional Chern insulators in moiré flat bands with high Chern numbers
Authors:
Chonghao Wang,
Xiaoyang Shen,
Ruiping Guo,
Chong Wang,
Wenhui Duan,
Yong Xu
Abstract:
Recent discoveries of zero-field fractional Chern insulators in moiré materials have attracted intensive research interests. However, most current theoretical and experimental attempts focus on systems with low Chern number bands, in analogy to the Landau levels. Here we propose candidate material systems for realizing fractional Chern insulators with higher Chern numbers. The material setup invol…
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Recent discoveries of zero-field fractional Chern insulators in moiré materials have attracted intensive research interests. However, most current theoretical and experimental attempts focus on systems with low Chern number bands, in analogy to the Landau levels. Here we propose candidate material systems for realizing fractional Chern insulators with higher Chern numbers. The material setup involves $Γ$-valley twisted homobilayer transition metal dichalcogenides in proximity to a skyrmion lattice. The skyrmion exchange potential induces a flat band with a high Chern number $C = -2$. Using the momentum-space projected exact diagonalization method, we perform a comprehensive study at various filling factors, confirming the generalized Jain series. Our research provides theoretical guidance on realizing unconventional fractional Chern insulators beyond the Landau level picture.
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Submitted 6 August, 2024;
originally announced August 2024.
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Chiral Floquet Engineering on Topological Fermions in Chiral Crystals
Authors:
Benshu Fan,
Wenhui Duan,
Angel Rubio,
Peizhe Tang
Abstract:
The interplay of chiralities in light and quantum matter provides an opportunity to design and manipulate chirality-dependent properties in quantum materials. Herein we report the chirality-dependent Floquet engineering on topological fermions with the high Chern number in chiral crystal CoSi via circularly polarized light (CPL) pumping. Intense light pumping does not compromise the gapless nature…
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The interplay of chiralities in light and quantum matter provides an opportunity to design and manipulate chirality-dependent properties in quantum materials. Herein we report the chirality-dependent Floquet engineering on topological fermions with the high Chern number in chiral crystal CoSi via circularly polarized light (CPL) pumping. Intense light pumping does not compromise the gapless nature of topological fermions in CoSi, but displaces the crossing points in momentum space along the direction of light propagation. The Floquet chirality index is proposed to signify the interplay between the chiralities of topological fermion, crystal, and incident light, which determines the amplitudes and directions of light-induced momentum shifts. Regarding the time-reversal symmetry breaking induced by the CPL pumping, momentum shifts of topological fermions result in the birth of transient anomalous Hall signals in non-magnetic CoSi within an ultrafast time scale, which Mid-infrared (IR) pumping and terahertz (THz) Kerr or Faraday probe spectroscopy could experimentally detect. Our findings provide insights into exploring novel applications in optoelectronic devices by leveraging the degree of freedom of chirality in the non-equilibrium regime.
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Submitted 18 November, 2024; v1 submitted 6 August, 2024;
originally announced August 2024.
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Deep learning density functional theory Hamiltonian in real space
Authors:
Zilong Yuan,
Zechen Tang,
Honggeng Tao,
Xiaoxun Gong,
Zezhou Chen,
Yuxiang Wang,
He Li,
Yang Li,
Zhiming Xu,
Minghui Sun,
Boheng Zhao,
Chong Wang,
Wenhui Duan,
Yong Xu
Abstract:
Deep learning electronic structures from ab initio calculations holds great potential to revolutionize computational materials studies. While existing methods proved success in deep-learning density functional theory (DFT) Hamiltonian matrices, they are limited to DFT programs using localized atomic-like bases and heavily depend on the form of the bases. Here, we propose the DeepH-r method for dee…
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Deep learning electronic structures from ab initio calculations holds great potential to revolutionize computational materials studies. While existing methods proved success in deep-learning density functional theory (DFT) Hamiltonian matrices, they are limited to DFT programs using localized atomic-like bases and heavily depend on the form of the bases. Here, we propose the DeepH-r method for deep-learning DFT Hamiltonians in real space, facilitating the prediction of DFT Hamiltonian in a basis-independent manner. An equivariant neural network architecture for modeling the real-space DFT potential is developed, targeting a more fundamental quantity in DFT. The real-space potential exhibits simplified principles of equivariance and enhanced nearsightedness, further boosting the performance of deep learning. When applied to evaluate the Hamiltonian matrix, this method significantly improved in accuracy, as exemplified in multiple case studies. Given the abundance of data in the real-space potential, this work may pave a novel pathway for establishing a ``large materials model" with increased accuracy.
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Submitted 19 July, 2024;
originally announced July 2024.
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Necklace-like pattern of vortex bound states
Authors:
Zhiyong Hou,
Kailun Chen,
Wenshan Hong,
Da Wang,
Wen Duan,
Huan Yang,
Shiliang Li,
Huiqian Luo,
Qiang-Hua Wang,
Tao Xiang,
Hai-Hu Wen
Abstract:
Vortex is a topological defect in the superconducting condensate when a magnetic field is applied to a type-II superconductor, as elucidated by the Ginzburg-Landau theory. Due to the confinement of the quasiparticles by a vortex, it exhibits a circular shaped pattern of bound states with discrete energy levels, as predicted by the Caroli-de Gennes-Matricon theory in 1964. Here, however, we report…
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Vortex is a topological defect in the superconducting condensate when a magnetic field is applied to a type-II superconductor, as elucidated by the Ginzburg-Landau theory. Due to the confinement of the quasiparticles by a vortex, it exhibits a circular shaped pattern of bound states with discrete energy levels, as predicted by the Caroli-de Gennes-Matricon theory in 1964. Here, however, we report a completely new type of vortex pattern which is necklace-like in an iron-based superconductor KCa2Fe4As4F2. Our theoretical analysis shows that this necklace-like vortex pattern arises from selective off-shell interference between vortex bound states of opposite angular momenta in the presence of rotational symmetry breaking due to disorders. This fascinating effect can be observed in a system with a small Fermi energy and wave vector, conditions fortuitously met in our samples. Our results not only disclose a novel vortex structure but also provide insights into comprehending the physics of the superconducting condensate.
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Submitted 11 July, 2024;
originally announced July 2024.
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Imaging moiré flat bands and Wigner molecular crystals in twisted bilayer MoTe2
Authors:
Yufeng Liu,
Yu Gu,
Ting Bao,
Ning Mao,
Shudan Jiang,
Liang Liu,
Dandan Guan,
Yaoyi Li,
Hao Zheng,
Canhua Liu,
Kenji Watanabe,
Takashi Taniguchi,
Wenhui Duan,
Jinfeng Jia,
Xiaoxue Liu,
Can Li,
Yang Zhang,
Tingxin Li,
Shiyong Wang
Abstract:
Two-dimensional semiconducting moiré materials have emerged as a highly tunable platform for exploring novel quantum phenomena. Recently, tMoTe2 has attracted significant attentions due to the observation of the long-sought fractional quantum anomalous Hall effect. However, a comprehensive microscopic understanding of the tMoTe2 moiré superlattice remains elusive. Here, we report STM/STS studies i…
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Two-dimensional semiconducting moiré materials have emerged as a highly tunable platform for exploring novel quantum phenomena. Recently, tMoTe2 has attracted significant attentions due to the observation of the long-sought fractional quantum anomalous Hall effect. However, a comprehensive microscopic understanding of the tMoTe2 moiré superlattice remains elusive. Here, we report STM/STS studies in dual-gated tMoTe2 moiré devices with twist angles ranging from 2.3 to 3.8 deg. The device consists of two independent back-gates, one enables an ohmic contact for tMoTe2, while the other fine-tunes the Fermi level of tMoTe2. This dual-gate control enables direct measurement of the electronic structure in tMoTe2 under varied displacement fields and moiré filling factors, by fine tuning the gate voltage and the tip bias. Our STS spectra and spatial imaging reveal that the low-energy moiré flat bands are predominantly localized in the XM and MX regions of the moiré superlattice. At zero E-field, these bands form a honeycomb lattice with non-trivial topology, whereas an applied E-field drives a transition into two distinct triangular lattices with trivial topology. The spatial distributions align with large-scale first-principle calculations, demonstrating that the topological flat bands arise from the K-valley hybridization between the top and bottom MoTe2 layers. Furthermore, we show that the effective moiré potential depth can be controlled via gate and tip biases. At sufficient potential depths, we observe the emergence of Wigner molecular crystals, transitioning MX triangular lattice into a Kagome lattice at MX moiré filling factor 3. These results elucidate the microscopic origin of topological flat bands in tMoTe2 and demonstrate electric-field control of topology and correlated electronic orders, paving the way to engineer exotic quantum phases in moiré simulators.
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Submitted 31 March, 2025; v1 submitted 27 June, 2024;
originally announced June 2024.
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Improving density matrix electronic structure method by deep learning
Authors:
Zechen Tang,
Nianlong Zou,
He Li,
Yuxiang Wang,
Zilong Yuan,
Honggeng Tao,
Yang Li,
Zezhou Chen,
Boheng Zhao,
Minghui Sun,
Hong Jiang,
Wenhui Duan,
Yong Xu
Abstract:
The combination of deep learning and ab initio materials calculations is emerging as a trending frontier of materials science research, with deep-learning density functional theory (DFT) electronic structure being particularly promising. In this work, we introduce a neural-network method for modeling the DFT density matrix, a fundamental yet previously unexplored quantity in deep-learning electron…
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The combination of deep learning and ab initio materials calculations is emerging as a trending frontier of materials science research, with deep-learning density functional theory (DFT) electronic structure being particularly promising. In this work, we introduce a neural-network method for modeling the DFT density matrix, a fundamental yet previously unexplored quantity in deep-learning electronic structure. Utilizing an advanced neural network framework that leverages the nearsightedness and equivariance properties of the density matrix, the method demonstrates high accuracy and excellent generalizability in multiple example studies, as well as capability to precisely predict charge density and reproduce other electronic structure properties. Given the pivotal role of the density matrix in DFT as well as other computational methods, the current research introduces a novel approach to the deep-learning study of electronic structure properties, opening up new opportunities for deep-learning enhanced computational materials study.
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Submitted 25 June, 2024;
originally announced June 2024.
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Quantum Metric-induced Oscillations in Flat Bands
Authors:
Hui Zeng,
Zijian Zhou,
Wenhui Duan,
Huaqing Huang
Abstract:
The transport of Bloch electrons under strong fields is traditionally understood through two mechanisms: intraband Bloch oscillations and interband Zener tunneling. Here, we propose an oscillation mechanism induced by the interband quantum metric, which would significantly affect the electron dynamics under strong fields. By considering the multiband dynamics to the second order of the density mat…
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The transport of Bloch electrons under strong fields is traditionally understood through two mechanisms: intraband Bloch oscillations and interband Zener tunneling. Here, we propose an oscillation mechanism induced by the interband quantum metric, which would significantly affect the electron dynamics under strong fields. By considering the multiband dynamics to the second order of the density matrix, we reveal that quantum metric induced oscillations (QMOs) persist regardless of band dispersion, even in exactly dispersionless flat bands. The resultant drift current can reach a magnitude comparable to the Bloch oscillation induced drift current in systems where interband tunneling is negligible. Notably, the QMO induced drift current increases linearly with electric field strength under the constraints of time-reversal or spatial-inversion symmetry, emerging as the primary delocalized current. We further show that both one-dimensional and two-dimensional superlattices are potential platforms for investigating QMO.
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Submitted 24 March, 2025; v1 submitted 19 June, 2024;
originally announced June 2024.
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Universal materials model of deep-learning density functional theory Hamiltonian
Authors:
Yuxiang Wang,
Yang Li,
Zechen Tang,
He Li,
Zilong Yuan,
Honggeng Tao,
Nianlong Zou,
Ting Bao,
Xinghao Liang,
Zezhou Chen,
Shanghua Xu,
Ce Bian,
Zhiming Xu,
Chong Wang,
Chen Si,
Wenhui Duan,
Yong Xu
Abstract:
Realizing large materials models has emerged as a critical endeavor for materials research in the new era of artificial intelligence, but how to achieve this fantastic and challenging objective remains elusive. Here, we propose a feasible pathway to address this paramount pursuit by developing universal materials models of deep-learning density functional theory Hamiltonian (DeepH), enabling compu…
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Realizing large materials models has emerged as a critical endeavor for materials research in the new era of artificial intelligence, but how to achieve this fantastic and challenging objective remains elusive. Here, we propose a feasible pathway to address this paramount pursuit by developing universal materials models of deep-learning density functional theory Hamiltonian (DeepH), enabling computational modeling of the complicated structure-property relationship of materials in general. By constructing a large materials database and substantially improving the DeepH method, we obtain a universal materials model of DeepH capable of handling diverse elemental compositions and material structures, achieving remarkable accuracy in predicting material properties. We further showcase a promising application of fine-tuning universal materials models for enhancing specific materials models. This work not only demonstrates the concept of DeepH's universal materials model but also lays the groundwork for developing large materials models, opening up significant opportunities for advancing artificial intelligence-driven materials discovery.
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Submitted 15 June, 2024;
originally announced June 2024.
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Stabilizing fractional Chern insulators via exchange interaction in moiré systems
Authors:
Xiaoyang Shen,
Chonghao Wang,
Ruiping Guo,
Zhiming Xu,
Wenhui Duan,
Yong Xu
Abstract:
Recent experimental discovery of fractional Chern insulator in moiré Chern band in twisted transition metal dichalocogenide homobilayers has sparked intensive interest in exploring the ways of engineering band topology and correlated states in moiré systems. In this letter, we demonstrate that, with an additional exchange interaction induced by proximity effect, the topology and bandwidth of the m…
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Recent experimental discovery of fractional Chern insulator in moiré Chern band in twisted transition metal dichalocogenide homobilayers has sparked intensive interest in exploring the ways of engineering band topology and correlated states in moiré systems. In this letter, we demonstrate that, with an additional exchange interaction induced by proximity effect, the topology and bandwidth of the moiré minibands of twisted $\mathrm{MoTe_2}$ homobilayers can be easily tuned. Fractional Chern insulators at -2/3 filling are found to appear at enlarged twist angles over a large range of twist angles with enhanced many-body gaps. We further discover a topological phase transition between the fractional Chern insulator, quantum anomalous Hall crystal, and charge density wave. Our results shed light on the interplay between topology and correlation physics.
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Submitted 20 May, 2024;
originally announced May 2024.
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Deep-Learning Database of Density Functional Theory Hamiltonians for Twisted Materials
Authors:
Ting Bao,
Runzhang Xu,
He Li,
Xiaoxun Gong,
Zechen Tang,
Jingheng Fu,
Wenhui Duan,
Yong Xu
Abstract:
Moiré-twisted materials have garnered significant research interest due to their distinctive properties and intriguing physics. However, conducting first-principles studies on such materials faces challenges, notably the formidable computational cost associated with simulating ultra-large twisted structures. This obstacle impedes the construction of a twisted materials database crucial for datadri…
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Moiré-twisted materials have garnered significant research interest due to their distinctive properties and intriguing physics. However, conducting first-principles studies on such materials faces challenges, notably the formidable computational cost associated with simulating ultra-large twisted structures. This obstacle impedes the construction of a twisted materials database crucial for datadriven materials discovery. Here, by using high-throughput calculations and state-of-the-art neural network methods, we construct a Deep-learning Database of density functional theory (DFT) Hamiltonians for Twisted materials named DDHT. The DDHT database comprises trained neural-network models of over a hundred homo-bilayer and hetero-bilayer moiré-twisted materials. These models enable accurate prediction of the DFT Hamiltonian for these materials across arbitrary twist angles, with an averaged mean absolute error of approximately 1.0 meV or lower. The database facilitates the exploration of flat bands and correlated materials platforms within ultra-large twisted structures.
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Submitted 9 April, 2024;
originally announced April 2024.
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Observation of dichotomic field-tunable electronic structure in twisted monolayer-bilayer graphene
Authors:
Hongyun Zhang,
Qian Li,
Youngju Park,
Yujin Jia,
Wanying Chen,
Jiaheng Li,
Qinxin Liu,
Changhua Bao,
Nicolas Leconte,
Shaohua Zhou,
Yuan Wang,
Kenji Watanabe,
Takashi Taniguchi,
Jose Avila,
Pavel Dudin,
Pu Yu,
Hongming Weng,
Wenhui Duan,
Quansheng Wu,
Jeil Jung,
Shuyun Zhou
Abstract:
Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric…
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Twisted bilayer graphene (tBLG) provides a fascinating platform for engineering flat bands and inducing correlated phenomena. By designing the stacking architecture of graphene layers, twisted multilayer graphene can exhibit different symmetries with rich tunability. For example, in twisted monolayer-bilayer graphene (tMBG) which breaks the C2z symmetry, transport measurements reveal an asymmetric phase diagram under an out-of-plane electric field, exhibiting correlated insulating state and ferromagnetic state respectively when reversing the field direction. Revealing how the electronic structure evolves with electric field is critical for providing a better understanding of such asymmetric field-tunable properties. Here we report the experimental observation of field-tunable dichotomic electronic structure of tMBG by nanospot angle-resolved photoemission spectroscopy (NanoARPES) with operando gating. Interestingly, selective enhancement of the relative spectral weight contributions from monolayer and bilayer graphene is observed when switching the polarity of the bias voltage. Combining experimental results with theoretical calculations, the origin of such field-tunable electronic structure, resembling either tBLG or twisted double-bilayer graphene (tDBG), is attributed to the selectively enhanced contribution from different stacking graphene layers with a strong electron-hole asymmetry. Our work provides electronic structure insights for understanding the rich field-tunable physics of tMBG.
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Submitted 8 April, 2024;
originally announced April 2024.
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Giant and controllable nonlinear magneto-optical effects in two-dimensional magnets
Authors:
Dezhao Wu,
Meng Ye,
Haowei Chen,
Yong Xu,
Wenhui Duan
Abstract:
The interplay of polarization and magnetism in materials with light can create rich nonlinear magneto-optical (NLMO) effects, and the recent discovery of two-dimensional (2D) van der Waals magnets provides remarkable control over NLMO effects due to their superb tunability. Here, based on first-principles calculations, we reported giant NLMO effects in CrI3-based 2D magnets, including a dramatic c…
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The interplay of polarization and magnetism in materials with light can create rich nonlinear magneto-optical (NLMO) effects, and the recent discovery of two-dimensional (2D) van der Waals magnets provides remarkable control over NLMO effects due to their superb tunability. Here, based on first-principles calculations, we reported giant NLMO effects in CrI3-based 2D magnets, including a dramatic change of second-harmonics generation (SHG) polarization direction (90 degrees) and intensity (on/off switch) under magnetization reversal, and a 100% SHG circular dichroism effect. We further revealed that these effects could not only be used to design ultra-thin multifunctional optical devices, but also to detect subtle magnetic orderings. Remarkably, we analytically derived conditions to achieve giant NLMO effects and propose general strategies to realize them in 2D magnets. Our work not only uncovers a series of intriguing NLMO phenomena, but also paves the way for both fundamental research and device applications of ultra-thin NLMO materials.
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Submitted 4 April, 2024;
originally announced April 2024.
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Non-Hermitian Topology with Generalized Chiral Symmetry
Authors:
Alex Westström,
Wenbu Duan,
Jian Li
Abstract:
We study a generalization of chiral symmetry applicable to non-Hermitian systems and its topological consequences on one-dimensional chains. We uncover a rich family of topological phases hosting several chiral flavors characterized not by a single winding number, but a vector of of them. This, in turn, leads to a novel type of bulk-boundary correspondence, where -- in contrast with conventional c…
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We study a generalization of chiral symmetry applicable to non-Hermitian systems and its topological consequences on one-dimensional chains. We uncover a rich family of topological phases hosting several chiral flavors characterized not by a single winding number, but a vector of of them. This, in turn, leads to a novel type of bulk-boundary correspondence, where -- in contrast with conventional chiral chains -- some flavors can have topologically stable non-zero charges on both ends. Moreover, we find that the total charge of each flavor can in some cases exceed the magnitude of the highest winding number in the vector invariant. Our work extends the topological classification of the non-Hermitian AIII class along a new axis.
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Submitted 27 March, 2024;
originally announced March 2024.
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Evolution of flat band and role of lattice relaxations in twisted bilayer graphene
Authors:
Qian Li,
Hongyun Zhang,
Yijie Wang,
Wanying Chen,
Changhua Bao,
Qinxin Liu,
Tianyun Lin,
Shuai Zhang,
Haoxiong Zhang,
Kenji Watanabe,
Takashi Taniguchi,
Jose Avila,
Pavel Dudin,
Qunyang Li,
Pu Yu,
Wenhui Duan,
Zhida Song,
Shuyun Zhou
Abstract:
Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moiré period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physi…
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Magic-angle twisted bilayer graphene (MATBG) exhibits correlated phenomena such as superconductivity and Mott insulating state related to the weakly dispersing flat band near the Fermi energy. Beyond its moiré period, such flat band is expected to be sensitive to lattice relaxations. Thus, clarifying the evolution of the electronic structure with twist angle is critical for understanding the physics of MATBG. Here, we combine nanospot angle-resolved photoemission spectroscopy and atomic force microscopy to resolve the fine electronic structure of the flat band and remote bands, and their evolution with twist angles from 1.07$^\circ$ to 2.60$^\circ$. Near the magic angle, dispersion is characterized by a flat band near the Fermi energy with a strongly reduced bandwidth. Moreover, near 1.07$^\circ$, we observe a spectral weight transfer between remote bands at higher binding energy and extract the modulated interlayer spacing near the magic angle. Our work provides direct spectroscopic information on flat band physics and highlights the role of lattice relaxations.
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Submitted 20 March, 2024;
originally announced March 2024.
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Neural-network Density Functional Theory Based on Variational Energy Minimization
Authors:
Yang Li,
Zechen Tang,
Zezhou Chen,
Minghui Sun,
Boheng Zhao,
He Li,
Honggeng Tao,
Zilong Yuan,
Wenhui Duan,
Yong Xu
Abstract:
Deep-learning density functional theory (DFT) shows great promise to significantly accelerate material discovery and potentially revolutionize materials research. However, current research in this field primarily relies on data-driven supervised learning, making the developments of neural networks and DFT isolated from each other. In this work, we present a theoretical framework of neural-network…
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Deep-learning density functional theory (DFT) shows great promise to significantly accelerate material discovery and potentially revolutionize materials research. However, current research in this field primarily relies on data-driven supervised learning, making the developments of neural networks and DFT isolated from each other. In this work, we present a theoretical framework of neural-network DFT, which unifies the optimization of neural networks with the variational computation of DFT, enabling physics-informed unsupervised learning. Moreover, we develop a differential DFT code incorporated with deep-learning DFT Hamiltonian, and introduce algorithms of automatic differentiation and backpropagation into DFT, demonstrating the capability of neural-network DFT. The physics-informed neural-network architecture not only surpasses conventional approaches in accuracy and efficiency, but also offers a new paradigm for developing deep-learning DFT methods.
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Submitted 12 August, 2024; v1 submitted 17 March, 2024;
originally announced March 2024.
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Valley-dependent Multiple Quantum States and Topological Transitions in Germanene-based Ferromagnetic van der Waals Heterostructures
Authors:
Feng Xue,
Jiaheng Li,
Yizhou Liu,
Ruqian Wu,
Yong Xu,
Wenhui Duan
Abstract:
Topological and valleytronic materials are promising for spintronic and quantum applications due to their unique properties. Using first principles calculations, we demonstrate that germanene (Ge)-based ferromagnetic heterostructures can exhibit multiple quantum states such as quantum anomalous Hall effect (QAHE) with Chern numbers of C=-1 or C=-2, quantum valley Hall effect (QVHE) with a valley C…
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Topological and valleytronic materials are promising for spintronic and quantum applications due to their unique properties. Using first principles calculations, we demonstrate that germanene (Ge)-based ferromagnetic heterostructures can exhibit multiple quantum states such as quantum anomalous Hall effect (QAHE) with Chern numbers of C=-1 or C=-2, quantum valley Hall effect (QVHE) with a valley Chern number of C$v$=2, valley-polarized quantum anomalous Hall effect (VP-QAHE) with two Chern numbers of C=-1 and C$v$=-1 as well as time-reversal symmetry broken quantum spin Hall effect (T-broken QSHE) with a spin Chern number of C$s$~1. Furthermore, we find that the transitions between different quantum states can occur by changing the magnetic orientation of ferromagnetic layers through applying a magnetic field. Our discovery provides new routes and novel material platforms with a unique combination of diverse properties that make it well suitable for applications in electronics, spintronics and valley electronics.
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Submitted 8 February, 2024;
originally announced February 2024.
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Equivariant Neural Network Force Fields for Magnetic Materials
Authors:
Zilong Yuan,
Zhiming Xu,
He Li,
Xinle Cheng,
Honggeng Tao,
Zechen Tang,
Zhiyuan Zhou,
Wenhui Duan,
Yong Xu
Abstract:
Neural network force fields have significantly advanced ab initio atomistic simulations across diverse fields. However, their application in the realm of magnetic materials is still in its early stage due to challenges posed by the subtle magnetic energy landscape and the difficulty of obtaining training data. Here we introduce a data-efficient neural network architecture to represent density func…
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Neural network force fields have significantly advanced ab initio atomistic simulations across diverse fields. However, their application in the realm of magnetic materials is still in its early stage due to challenges posed by the subtle magnetic energy landscape and the difficulty of obtaining training data. Here we introduce a data-efficient neural network architecture to represent density functional theory total energy, atomic forces, and magnetic forces as functions of atomic and magnetic structures. Our approach incorporates the principle of equivariance under the three-dimensional Euclidean group into the neural network model. Through systematic experiments on various systems, including monolayer magnets, curved nanotube magnets, and moiré-twisted bilayer magnets of $\text{CrI}_{3}$, we showcase the method's high efficiency and accuracy, as well as exceptional generalization ability. The work creates opportunities for exploring magnetic phenomena in large-scale materials systems.
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Submitted 7 February, 2024;
originally announced February 2024.
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Deep-learning density functional perturbation theory
Authors:
He Li,
Zechen Tang,
Jingheng Fu,
Wen-Han Dong,
Nianlong Zou,
Xiaoxun Gong,
Wenhui Duan,
Yong Xu
Abstract:
Calculating perturbation response properties of materials from first principles provides a vital link between theory and experiment, but is bottlenecked by the high computational cost. Here a general framework is proposed to perform density functional perturbation theory (DFPT) calculations by neural networks, greatly improving the computational efficiency. Automatic differentiation is applied on…
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Calculating perturbation response properties of materials from first principles provides a vital link between theory and experiment, but is bottlenecked by the high computational cost. Here a general framework is proposed to perform density functional perturbation theory (DFPT) calculations by neural networks, greatly improving the computational efficiency. Automatic differentiation is applied on neural networks, facilitating accurate computation of derivatives. High efficiency and good accuracy of the approach are demonstrated by studying electron-phonon coupling and related physical quantities. This work brings deep-learning density functional theory and DFPT into a unified framework, creating opportunities for developing ab initio artificial intelligence.
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Submitted 31 January, 2024;
originally announced January 2024.
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DeepH-2: Enhancing deep-learning electronic structure via an equivariant local-coordinate transformer
Authors:
Yuxiang Wang,
He Li,
Zechen Tang,
Honggeng Tao,
Yanzhen Wang,
Zilong Yuan,
Zezhou Chen,
Wenhui Duan,
Yong Xu
Abstract:
Deep-learning electronic structure calculations show great potential for revolutionizing the landscape of computational materials research. However, current neural-network architectures are not deemed suitable for widespread general-purpose application. Here we introduce a framework of equivariant local-coordinate transformer, designed to enhance the deep-learning density functional theory Hamilto…
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Deep-learning electronic structure calculations show great potential for revolutionizing the landscape of computational materials research. However, current neural-network architectures are not deemed suitable for widespread general-purpose application. Here we introduce a framework of equivariant local-coordinate transformer, designed to enhance the deep-learning density functional theory Hamiltonian referred to as DeepH-2. Unlike previous models such as DeepH and DeepH-E3, DeepH-2 seamlessly integrates the simplicity of local-coordinate transformations and the mathematical elegance of equivariant neural networks, effectively overcoming their respective disadvantages. Based on our comprehensive experiments, DeepH-2 demonstrates superiority over its predecessors in both efficiency and accuracy, showcasing state-of-the-art performance. This advancement opens up opportunities for exploring universal neural network models or even large materials models.
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Submitted 30 January, 2024;
originally announced January 2024.
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Enhancement of Ising superconductivity in monolayer NbSe$_2$ via surface fluorination
Authors:
Jizheng Wu,
Wujun Shi,
Chong Wang,
Wenhui Duan,
Yong Xu,
Chen Si
Abstract:
Recently discovered Ising superconductors have garnered considerable interest due to their anomalously large in-plane upper critical fields ($B_{c2}$). However, the requisite strong spin-orbital coupling in the Ising pairing mechanism generally renders these superconductors heavy-element dominant with notably low superconducting transition temperatures ($T_c$). Here, based on the Migdal-Eliashberg…
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Recently discovered Ising superconductors have garnered considerable interest due to their anomalously large in-plane upper critical fields ($B_{c2}$). However, the requisite strong spin-orbital coupling in the Ising pairing mechanism generally renders these superconductors heavy-element dominant with notably low superconducting transition temperatures ($T_c$). Here, based on the Migdal-Eliashberg theory and the mean-field Bogoliubov-de Gennes Hamiltonian, we demonstrate a significant enhancement of Ising superconductivity in monolayer NbSe$_2$ through surface fluorination, as evidenced by concomitant improvements in $T_c$ and $B_{c2}$. This enhancement arises from three predominant factors. Firstly, fluorine atoms symmetrically and stably adhere to both sides of the monolayer NbSe$_2$, thereby maintaining the out-of-plane mirror symmetry and locking carrier spins out-of-plane. Secondly, fluorination suppresses the charge density wave in monolayer NbSe$_2$ and induces a van Hove singularity in the vicinity of the Fermi level, leading to a marked increase in the number of carriers and, consequently, strengthening the electron-phonon coupling (EPC). Lastly, the appearance of fluorine-related, low-frequency phonon modes further augments the EPC. Our findings suggest a promising avenue to elevate $T_c$ in two-dimensional Ising superconductors without compromising their Ising pairing.
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Submitted 6 January, 2024;
originally announced January 2024.
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Floquet engineering of black phosphorus upon below-gap pumping
Authors:
Shaohua Zhou,
Changhua Bao,
Benshu Fan,
Fei Wang,
Haoyuan Zhong,
Hongyun Zhang,
Peizhe Tang,
Wenhui Duan,
Shuyun Zhou
Abstract:
Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pum…
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Time-periodic light field can dress the electronic states and lead to light-induced emergent properties in quantum materials. While below-gap pumping is regarded favorable for Floquet engineering, so far direct experimental evidence of momentum-resolved band renormalization still remains missing. Here, we report experimental evidence of light-induced band renormalization in black phosphorus by pumping at photon energy of 160 meV which is far below the band gap, and the distinction between below-gap pumping and near-resonance pumping is revealed. Our work demonstrates light-induced band engineering upon below-gap pumping, and provides insights for extending Floquet engineering to more quantum materials.
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Submitted 20 September, 2023;
originally announced September 2023.
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Direct visualization of electric current induced dipoles of atomic impurities
Authors:
Yaowu Liu,
Zichun Zhang,
Sidan Chen,
Shengnan Xu,
Lichen Ji,
Wei Chen,
Xinyu Zhou,
Jiaxin Luo,
Xiaopen Hu,
Wenhui Duan,
Xi Chen,
Qi-Kun Xue,
Shuai-Hua Ji
Abstract:
Learning the electron scattering around atomic impurities is a fundamental step to fully understand the basic electronic transport properties of realistic conducting materials. Although many efforts have been made in this field for several decades, atomic scale transport around single point-like impurities has yet been achieved. Here, we report the direct visualization of the electric current indu…
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Learning the electron scattering around atomic impurities is a fundamental step to fully understand the basic electronic transport properties of realistic conducting materials. Although many efforts have been made in this field for several decades, atomic scale transport around single point-like impurities has yet been achieved. Here, we report the direct visualization of the electric current induced dipoles around single atomic impurities in epitaxial bilayer graphene by multi-probe low temperature scanning tunneling potentiometry as the local current density is raised up to around 25 A/m, which is considerably higher than that in previous studies. We find the directions of these dipoles which are parallel or anti-parallel to local current are determined by the charge polarity of the impurities, revealing the direct evidence for the existence of the carrier density modulation effect proposed by Landauer in 1976. Furthermore, by $in$ $situ$ tuning local current direction with contact probes, these dipoles are redirected correspondingly. Our work paves the way to explore the electronic quantum transport phenomena at single atomic impurity level and the potential future electronics toward or beyond the end of Moore's Law.
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Submitted 3 September, 2023;
originally announced September 2023.
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Generalization of the Nested Wilson Loop Formalism in Topological Dirac Semimetals with Higher-order Fermi Arcs
Authors:
Hui Zeng,
Wenhui Duan,
Huaqing Huang
Abstract:
We generalize the nested Wilson loop formalism, which has been playing an important role in the study of topological quadrupole insulators, to two-dimensional (2D) and 3D nonsymmorphic materials with higher-order topology. In particular, certain 3D Dirac semimetals exhibit 1D higher-order Fermi arc (HOFA) states localizing on hinges where two surfaces meet and connecting the projection of the bulk…
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We generalize the nested Wilson loop formalism, which has been playing an important role in the study of topological quadrupole insulators, to two-dimensional (2D) and 3D nonsymmorphic materials with higher-order topology. In particular, certain 3D Dirac semimetals exhibit 1D higher-order Fermi arc (HOFA) states localizing on hinges where two surfaces meet and connecting the projection of the bulk Dirac points. We discover that the generalized nested Berry phase (gNBP) derived from this formalism is the bulk topological indicator determining the existence/absence of HOFAs, revealing a direct bulk-hinge correspondence in 3D Dirac semimetals. Finally, we study the Dirac semimetals NaCuSe and KMgBi based on first-principles calculations and explicitly show that the change in gNBP adjacent to the Dirac point corresponds to the termination of HOFAs at the projection of Dirac points on the hinge. Our findings not only improve the understanding of the bulk-hinge correspondence in topological Dirac semimetals but also provide a general formalism for studying the higher-order topology in nonsymmorphic systems.
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Submitted 14 August, 2023;
originally announced August 2023.
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Chiral magnetism in lithium-decorated monolayer CrTe$_{2}$: Interplay between Dzyaloshinskii-Moriya interaction and higher-order interactions
Authors:
Weiyi Pan,
Changsong Xu,
Xueyang Li,
Zhiming Xu,
Boyu Liu,
Bing-Lin Gu,
Wenhui Duan
Abstract:
Chiral magnetic states in two-dimensional (2D) layered noncentrosymmetric magnets, which are promising advanced spintronic materials, are usually attributed to Dzyaloshinskii-Moriya interactions (DMI). However, the role of underlying higher-order spin couplings in determining the properties of chiral spin textures has much less reported. In this work, taking the lithium-decorated monolayer CrTe…
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Chiral magnetic states in two-dimensional (2D) layered noncentrosymmetric magnets, which are promising advanced spintronic materials, are usually attributed to Dzyaloshinskii-Moriya interactions (DMI). However, the role of underlying higher-order spin couplings in determining the properties of chiral spin textures has much less reported. In this work, taking the lithium-decorated monolayer CrTe$_{2}$ (monolayer LiCrTe$_{2}$) as an example, we develop a first-principles-based comprehensive spin model constructed by using the symmetry-adapted cluster expansion method. Based on this spin model, we identify the ground state of monolayer LiCrTe$_{2}$ as a chiral spin spiral state, which can further assemble macroscopic chiral labyrinth domains (LD) under zero-field conditions as well as evolve into skyrmions under a finite magnetic field. Moreover, higher-order biquadratic and three-site interactions are identified to be responsible for modulating both the size and the field stability of the spin spiral state. Our study sheds light on complex magnetic couplings in 2D magnets.
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Submitted 17 March, 2024; v1 submitted 11 August, 2023;
originally announced August 2023.
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Reliable Synthesis of Large-Area Monolayer WS2 Single Crystals, Films, and Heterostructures with Extraordinary Photoluminescence Induced by Water Intercalation
Authors:
Qianhui Zhang,
Jianfeng Lu,
Ziyu Wang,
Zhigao Dai,
Yupeng Zhang,
Fuzhi Huang,
Qiaoliang Bao,
Wenhui Duan,
Michael S. Fuhrer,
Changxi Zheng
Abstract:
Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical properties. Chemical vapor deposition (CVD) is the technique widely used for the synthesis of large-area TMDs. However, due to high sensitivity to the growth environment, reliable synthesis of monolayer TMDs via CVD remain…
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Two-dimensional (2D) transition metal dichalcogenides (TMDs) hold great potential for future low-energy optoelectronics owing to their unique electronic, optical, and mechanical properties. Chemical vapor deposition (CVD) is the technique widely used for the synthesis of large-area TMDs. However, due to high sensitivity to the growth environment, reliable synthesis of monolayer TMDs via CVD remains challenging. Here we develop a controllable CVD process for large-area synthesis of monolayer WS2 crystals, films, and in-plane graphene-WS2 heterostructures by cleaning the reaction tube with hydrochloric acid, sulfuric acid and aqua regia. The concise cleaning process can remove the residual contaminates attached to the CVD reaction tube and crucibles, reducing the nucleation density but enhancing the diffusion length of WS2 species. The photoluminescence (PL) mappings of a WS2 single crystal and film reveal that the extraordinary PL around the edges of a triangular single crystal is induced by ambient water intercalation at the WS2-sapphire interface. The extraordinary PL can be controlled by the choice of substrates with different wettabilities.
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Submitted 31 July, 2023;
originally announced July 2023.
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A volatile polymer stamp for large-scale, etching-free, and ultraclean transfer and assembly of two-dimensional materials and its heterostructures
Authors:
Zhigao Dai,
Yupeng Wang,
Lu Liu,
Junkai Deng,
Wen-Xin Tang,
Qingdong Ou,
Ziyu Wang,
Md Hemayet Uddin,
Guangyuan Si,
Qianhui Zhang,
Wenhui Duan,
Michael S. Fuhrer,
Changxi Zheng
Abstract:
The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herein, we report a facile technique called volatile polymer stamping (VPS) to achieve efficient transfer of 2D materials and assembly of large-scale heterojunctions with clean interfaces. The central feature of the VPS techn…
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The intact transfer and assembly of two-dimensional (2D) materials and their heterostructures are critical for their integration into advanced electronic and optical devices. Herein, we report a facile technique called volatile polymer stamping (VPS) to achieve efficient transfer of 2D materials and assembly of large-scale heterojunctions with clean interfaces. The central feature of the VPS technique is the use of volatile polyphthalaldehyde (PPA) together with hydrophobic polystyrene (PS). While PS enables the direct delamination of 2D materials from hydrophilic substrates owing to water intercalation, PPA can protect 2D materials from solution attack and maintain their integrity during PS removal. Thereafter, PPA can be completely removed by thermal annealing at 180 °C. The proposed VPS technique overcomes the limitations of currently used transfer techniques, such as chemical etching during the delamination stage, solution tearing during cleaning, and contamination from polymer residues.
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Submitted 31 July, 2023;
originally announced July 2023.
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Intrinsic Nonlinear Hall Detection of the Néel Vector for Two-Dimensional Antiferromagnetic Spintronics
Authors:
Jizhang Wang,
Hui Zeng,
Wenhui Duan,
Huaqing Huang
Abstract:
The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspire us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be…
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The respective unique merit of antiferromagnets and two-dimensional (2D) materials in spintronic applications inspire us to exploit 2D antiferromagnetic spintronics. However, the detection of the Néel vector in 2D antiferromagnets remains a great challenge because the measured signals usually decrease significantly in the 2D limit. Here we propose that the Néel vector of 2D antiferromagnets can be efficiently detected by the intrinsic nonlinear Hall (INH) effect which exhibits unexpected significant signals. As a specific example, we show that the INH conductivity of the monolayer manganese chalcogenides Mn$X$ ($X$=S, Se, Te) can reach the order of nm$\cdot$mA/V$^2$, which is orders of magnitude larger than experimental values of paradigmatic antiferromagnetic spintronic materials. The INH effect can be accurately controlled by shifting the chemical potential around the band edge, which is experimentally feasible via electric gating or charge doping. Moreover, we explicitly demonstrate its $2π$-periodic dependence on the Néel vector orientation based on an effective $k.p$ model. Our findings enable flexible design schemes and promising material platforms for spintronic memory device applications based on 2D antiferromagnets.
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Submitted 20 June, 2023;
originally announced June 2023.
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Revealing the two-dimensional electronic structure and anisotropic superconductivity in a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$
Authors:
Haoyuan Zhong,
Hongyun Zhang,
Haoxiong Zhang,
Ting Bao,
Kenan Zhang,
Shengnan Xu,
Laipeng Luo,
Awabaikeli Rousuli,
Wei Yao,
Jonathan D. Denlinger,
Yaobo Huang,
Yang Wu,
Yong Xu,
Wenhui Duan,
Shuyun Zhou
Abstract:
Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by tran…
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Van der Waals superlattices are important for tailoring the electronic structures and properties of layered materials. Here we report the superconducting properties and electronic structure of a natural van der Waals superlattice (PbSe)$_{1.14}$NbSe$_2$. Anisotropic superconductivity with a transition temperature $T_c$ = 5.6 $\pm$ 0.1 K, which is higher than monolayer NbSe$_2$, is revealed by transport measurements on high-quality samples. Angle-resolved photoemission spectroscopy (ARPES) measurements reveal the two-dimensional electronic structure and a charge transfer of 0.43 electrons per NbSe$_2$ unit cell from the blocking PbSe layer. In addition, polarization-dependent ARPES measurements reveal a significant circular dichroism with opposite contrast at K and K' valleys, suggesting a significant spin-orbital coupling and distinct orbital angular momentum. Our work suggests natural van der Waals superlattice as an effective pathway for achieving intriguing properties distinct from both the bulk and monolayer samples.
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Submitted 24 April, 2023;
originally announced April 2023.
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Distinguishing and controlling Mottness in 1T-TaS$_2$ by ultrafast light
Authors:
Changhua Bao,
Haoyuan Zhong,
Fei Wang,
Tianyun Lin,
Haoxiong Zhang,
Zhiyuan Sun,
Wenhui Duan,
Shuyun Zhou
Abstract:
Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as w…
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Distinguishing and controlling the extent of Mottness is important for materials where the energy scales of the onsite Coulomb repulsion U and the bandwidth W are comparable. Here we report the ultrafast electronic dynamics of 1T-TaS$_2$ by ultrafast time- and angle-resolved photoemission spectroscopy. A comparison of the electron dynamics for the newly-discovered intermediate phase (I-phase) as well as the low-temperature commensurate charge density wave (C-CDW) phase shows distinctive dynamics. While the I-phase is characterized by an instantaneous response and nearly time-resolution-limited fast relaxation (~200 fs), the C-CDW phase shows a delayed response and a slower relaxation (a few ps). Such distinctive dynamics refect the different relaxation mechanisms and provide nonequilibrium signatures to distinguish the Mott insulating I-phase from the C-CDW band insulating phase. Moreover, a light-induced bandwidth reduction is observed in the C-CDW phase, pushing it toward the Mott insulating phase. Our work demonstrates the power of ultrafast light-matter interaction in both distinguishing and controlling the extent of Mottness on the ultrafast timescale.
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Submitted 3 March, 2023;
originally announced March 2023.
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Efficient hybrid density functional calculation by deep learning
Authors:
Zechen Tang,
He Li,
Peize Lin,
Xiaoxun Gong,
Gan Jin,
Lixin He,
Hong Jiang,
Xinguo Ren,
Wenhui Duan,
Yong Xu
Abstract:
Hybrid density functional calculation is indispensable to accurate description of electronic structure, whereas the formidable computational cost restricts its broad application. Here we develop a deep equivariant neural network method (named DeepH-hybrid) to learn the hybrid-functional Hamiltonian from self-consistent field calculations of small structures, and apply the trained neural networks f…
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Hybrid density functional calculation is indispensable to accurate description of electronic structure, whereas the formidable computational cost restricts its broad application. Here we develop a deep equivariant neural network method (named DeepH-hybrid) to learn the hybrid-functional Hamiltonian from self-consistent field calculations of small structures, and apply the trained neural networks for efficient electronic-structure calculation by passing the self-consistent iterations. The method is systematically checked to show high efficiency and accuracy, making the study of large-scale materials with hybrid-functional accuracy feasible. As an important application, the DeepH-hybrid method is applied to study large-supercell Moiré twisted materials, offering the first case study on how the inclusion of exact exchange affects flat bands in the magic-angle twisted bilayer graphene.
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Submitted 16 February, 2023;
originally announced February 2023.
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Topological Phases on Quantum Trees
Authors:
Alex Westström,
Wenbu Duan,
Kangpei Yao,
Xiaonan Wang,
Jie Liu,
Jian Li
Abstract:
In this work, we present a theory for topological phases for quantum systems on tree graphs. Conventionally, topological phases of matter have been studied in regular lattices, but also in quasicrystals and amorphous settings. We consider specific generalizations of regular tree graphs, and explore their topological properties. Unlike conventional systems, infinite quantum trees are not finite-dim…
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In this work, we present a theory for topological phases for quantum systems on tree graphs. Conventionally, topological phases of matter have been studied in regular lattices, but also in quasicrystals and amorphous settings. We consider specific generalizations of regular tree graphs, and explore their topological properties. Unlike conventional systems, infinite quantum trees are not finite-dimensional, allowing for novel phenomena. We find a proliferation of topological zero modes present throughout the entire system, indicating that the bulk also acts as a boundary. We then go on to show that only three symmetry classes host stable topological phases in contrast to the usual five symmetry classes per dimension. Finally, we introduce what we call the Su-Schrieffer-Heeger tree which is topologically non-trivial even in the absence of inner degrees of freedom and does not possess any gapped trivial phases. We realize this system in an electronic circuit and show that our theory matches with experiments.
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Submitted 6 February, 2023;
originally announced February 2023.