Showing 1–50 of 61 results for author: Duan, J

Gate Tunable Room-temperature Mott Insulator in Kagome compound Nb3Cl8

Authors: Qiu Yang, Min Wu, Jingyi Duan, Zhijie Ma, Lingxiao Li, Zihao Huo, Zaizhe Zhang, Kenji Watanabe, Takashi Taniguchi, Xiaoxu Zhao, Yi Chen, Youguo Shi, Wei Jiang, Kaihui Liu, Xiaobo Lu

Abstract: The kagome lattice provides a playground to explore novel correlated quantum states due to the presence of flat bands in its electronic structure. Recently discovered layered kagome compound Nb3Cl8 has been proposed as a Mott insulator coming from the half-filled flat band. Here we have carried out systematic transport study to uncover the evidence of Mott insulator in Nb3Cl8 thin flakes. Bipolar… ▽ More The kagome lattice provides a playground to explore novel correlated quantum states due to the presence of flat bands in its electronic structure. Recently discovered layered kagome compound Nb3Cl8 has been proposed as a Mott insulator coming from the half-filled flat band. Here we have carried out systematic transport study to uncover the evidence of Mott insulator in Nb3Cl8 thin flakes. Bipolar semiconducting property with Fermi level close to conduction band has been revealed. We have further probed the chemical potential of Nb3Cl8 by tracing the charge neutrality point of the monolayer graphene proximate to Nb3Cl8. The gap of Nb3Cl8 flakes is approximately 1.10 eV at 100 K and shows pronounced temperature dependence, decreasing substantially with increasing temperature to ~0.63 eV at 300 K. The melting behavior of the gapped state is in consistent with theoretically proposed Mott insulator in Nb3Cl8. Our work has demonstrated Nb3Cl8 as a promising platform to study strongly correlated physics at relatively high temperature. △ Less

Submitted 10 June, 2025; originally announced June 2025.

Comments: 14 pages, 4figures

Roadmap for Photonics with 2D Materials

Authors: F. Javier García de Abajo, D. N. Basov, Frank H. L. Koppens, Lorenzo Orsini, Matteo Ceccanti, Sebastián Castilla, Lorenzo Cavicchi, Marco Polini, P. A. D. Gonçalves, A. T. Costa, N. M. R. Peres, N. Asger Mortensen, Sathwik Bharadwaj, Zubin Jacob, P. J. Schuck, A. N. Pasupathy, Milan Delor, M. K. Liu, Aitor Mugarza, Pablo Merino, Marc G. Cuxart, Emigdio Chávez-Angel, Martin Svec, Luiz H. G. Tizei, Florian Dirnberger , et al. (123 additional authors not shown)

Abstract: Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combinat… ▽ More Triggered by the development of exfoliation and the identification of a wide range of extraordinary physical properties in self-standing films consisting of one or few atomic layers, two-dimensional (2D) materials such as graphene, transition metal dichalcogenides (TMDs), and other van der Waals (vdW) crystals currently constitute a wide research field protruding in multiple directions in combination with layer stacking and twisting, nanofabrication, surface-science methods, and integration into nanostructured environments. Photonics encompasses a multidisciplinary collection of those directions, where 2D materials contribute with polaritons of unique characteristics such as strong spatial confinement, large optical-field enhancement, long lifetimes, high sensitivity to external stimuli (e.g., electric and magnetic fields, heating, and strain), a broad spectral range from the far infrared to the ultraviolet, and hybridization with spin and momentum textures of electronic band structures. The explosion of photonics with 2D materials as a vibrant research area is producing breakthroughs, including the discovery and design of new materials and metasurfaces with unprecedented properties as well as applications in integrated photonics, light emission, optical sensing, and exciting prospects for applications in quantum information, and nanoscale thermal transport. This Roadmap summarizes the state of the art in the field, identifies challenges and opportunities, and discusses future goals and how to meet them through a wide collection of topical sections prepared by leading practitioners. △ Less

Submitted 14 April, 2025; v1 submitted 6 April, 2025; originally announced April 2025.

Comments: 199 pages, 42 figures, 1154 references

Quantized Spin-Hall Conductivity in Altermagnet Fe$_2$Te$_2$O with Mirror-Spin Coupling

Authors: Run-Wu Zhang, Chaoxi Cui, Yang Wang, Jingyi Duan, Zhi-Ming Yu, Yugui Yao

Abstract: Due to spin-orbit coupling (SOC), crucial for the quantum spin Hall (QSH) effect, a quantized spin-Hall conductivity has not yet been reported in QSH insulators and other realistic materials. Here, we tackle this challenge by predicting robust quantized spin-Hall conductivity in monolayer Fe$_2$Te$_2$O. The underlying physics originates from the unrecognized mirror-spin coupling (MSC), which coupl… ▽ More Due to spin-orbit coupling (SOC), crucial for the quantum spin Hall (QSH) effect, a quantized spin-Hall conductivity has not yet been reported in QSH insulators and other realistic materials. Here, we tackle this challenge by predicting robust quantized spin-Hall conductivity in monolayer Fe$_2$Te$_2$O. The underlying physics originates from the unrecognized mirror-spin coupling (MSC), which couples spin-up and spin-down states into two orthogonal mirror eigenstates. We show that the MSC can naturally emerge in the two-dimensional altermagnets with out-of-plane Néel vector and horizontal mirror. A remarkable consequence of the MSC is that it can dramatically weaken the spin hybridization of the altermagnetic materials when SOC is included. When SOC is neglected, Fe$_2$Te$_2$O is an altermagnetic Weyl semimetal with MSC. With SOC, it evolves into the first material candidate for magnetic mirror Chern insulator. Remarkably, under the protection of MSC, the spin hybridization of both bulk and topological edge states in Fe$_2$Te$_2$O with SOC at low energy is negligible. As a consequence, a quantized spin-Hall conductivity emerges within the bulk band gap of the system. By unveiling a novel effect, our findings represent a significant advancement in spin Hall transport, and broaden the material candidates hosting intriguing altermagnetic phenomena. △ Less

Submitted 11 March, 2025; originally announced March 2025.

Comments: 3 figures, 6 pages

Visualization of topological shear polaritons in gypsum thin films

Authors: Pablo Díaz-Núñez, Christian Lanza, Ziwei Wang, Vasyl G. Kravets, Jiahua Duan, José Álvarez-Cuervo, Aitana Tarazaga Martín-Luengo, Alexander N. Grigorenko, Qian Yang, Alexander Paarmann, Joshua Caldwell, Pablo Alonso-González, Artem Mishchenko

Abstract: Low symmetry crystals have recently emerged as a platform for exploring novel light-matter interactions in the form of hyperbolic shear polaritons. These excitations exhibit unique optical properties such as frequency-dispersive optical axes and asymmetric light propagation and energy dissipation, which arise from the presence of non-orthogonal resonances. However, only non-vdW materials have been… ▽ More Low symmetry crystals have recently emerged as a platform for exploring novel light-matter interactions in the form of hyperbolic shear polaritons. These excitations exhibit unique optical properties such as frequency-dispersive optical axes and asymmetric light propagation and energy dissipation, which arise from the presence of non-orthogonal resonances. However, only non-vdW materials have been demonstrated to support hyperbolic shear polaritons, limiting their exotic properties and potential applications. Here we introduce for the first time novel shear phenomena in low symmetry crystal thin films by demonstrating the existence of elliptical and canalized shear phonon polaritons in gypsum, an exfoliable monoclinic sulphate mineral. Our results unveil a topological transition from hyperbolic shear to elliptical shear polaritons, passing through a canalization regime with strong field confinement. Importantly, we observe a significant slowdown of group velocity, reaching values as low as 0.0005c, highlighting the potential of gypsum for "slow light" applications and extreme light-matter interaction control. These findings expand the application scope of low-symmetry crystals with the benefits that an exfoliable material provides, such as stronger field confinement, tunability, and versatility for its incorporation in complex photonic devices that might unlock new optical phenomena at the nanoscale. △ Less

Submitted 31 January, 2025; originally announced January 2025.

Broad Spectral Tuning of Ultra-Low Loss Polaritons in a van der Waals Crystal by Intercalation

Authors: Javier Taboada-Gutiérrez, Gonzalo Álvarez-Pérez, Jiahua Duan, Weiliang Ma, Kyle Crowley, Iván Prieto, Andrei Bylinkin, Marta Autore, Halyna Volkova, Kenta Kimura, Tsuyoshi Kimura, M. -H. Berger, Shaojuan Li, Qiaoliang Bao, Xuan P. A. Gao, Ion Errea, Alexey Nikitin, Rainer Hillenbrand, Javier Martín-Sánchez, Pablo Alonso-González

Abstract: Phonon polaritons (PhPs) -- light coupled to lattice vibrations -- in polar van der Waals (vdW) crystals are promising candidates for controlling the flow of energy at the nanoscale due to their strong field confinement, anisotropic propagation, and ultra-long lifetime in the picosecond range \cite{ref1,ref2,ref3,ref4,ref5}. However, the lack of tunability in their narrow and material-specific spe… ▽ More Phonon polaritons (PhPs) -- light coupled to lattice vibrations -- in polar van der Waals (vdW) crystals are promising candidates for controlling the flow of energy at the nanoscale due to their strong field confinement, anisotropic propagation, and ultra-long lifetime in the picosecond range \cite{ref1,ref2,ref3,ref4,ref5}. However, the lack of tunability in their narrow and material-specific spectral range -- the Reststrahlen Band (RB) -- severely limits their technological implementation. Here, we demonstrate that the intercalation of Na atoms in the vdW semiconductor $α$-V$_2$O$_5$ enables a broad spectral shift of RBs, and that the PhPs excited exhibit ultra-low losses (lifetime of $4 \pm 1$~ps), similar to PhPs in the non-intercalated crystal (lifetime of $6 \pm 1$ ps). We expect our intercalation method to be applicable to other vdW crystals, opening the door for the use of PhPs in broad spectral bands in the mid-infrared domain. △ Less

Submitted 15 January, 2025; originally announced January 2025.

Comments: 15 pages, 5 figures

Journal ref: Nature Materials 19, 964-968 (2020)

Orbital torque switching of room temperature two-dimensional van der Waals ferromagnet Fe3GaTe2

Authors: Delin Zhang, Heshuang Wei, Jinyu Duan, Jiali Chen, Dongdong Yue, Yuhe Yang, Jinlong Gou, Junxin Yan, Kun Zhai, Ping Wang, Shuai Hu, Zhiyan Jia, Wei Jiang, Wenhong Wang, Yue Li, Yong Jiang

Abstract: Efficiently manipulating the magnetization of van der Waals ferromagnets has attracted considerable interest in developing room-temperature two-dimensional material-based memory and logic devices. Here, taking advantage of the unique properties of the van der Waals ferromagnet as well as promising characteristics of the orbital Hall effect, we demonstrate the room-temperature magnetization switchi… ▽ More Efficiently manipulating the magnetization of van der Waals ferromagnets has attracted considerable interest in developing room-temperature two-dimensional material-based memory and logic devices. Here, taking advantage of the unique properties of the van der Waals ferromagnet as well as promising characteristics of the orbital Hall effect, we demonstrate the room-temperature magnetization switching of van der Waals ferromagnet Fe3GaTe2 through the orbital torque generated by the orbital Hall material, Titanium (Ti). The switching current density is estimated to be around 1.6 x 10^6 A/cm^2, comparable to that achieved in Fe3GaTe2 using spin-orbit torque from spin Hall materials. The efficient magnetization switching arises from the combined effects of the large orbital Hall conductivity of Ti and the strong spin-orbit correlation of the Fe3GaTe2, as confirmed through theoretical calculations. Our findings advance the understanding of orbital torque switching and pave the way for exploring material-based orbitronic devices. △ Less

Submitted 6 December, 2024; originally announced December 2024.

Comments: 26 pages,4 figures, submitted

Evidence of anisotropic three-dimensional weak-localization in TiSe$_{2}$ nanoflakes

Authors: Xiaocui Wang, Yang Yang, Yongkai Li, Guangtong Liu, Junxi Duan, Zhiwei Wang, Li Lu, Fan Yang

Abstract: TiSe$_2$ is a typical transition-metal dichalcogenide known for its charge-density wave order. In this study, we report the observation of an unusual anisotropic negative magnetoresistance in exfoliated TiSe$_2$ nanoflakes at low temperatures. Unlike the negative magnetoresistance reported in most other transition-metal dichalcogenides, our results cannot be explained by either the conventional tw… ▽ More TiSe$_2$ is a typical transition-metal dichalcogenide known for its charge-density wave order. In this study, we report the observation of an unusual anisotropic negative magnetoresistance in exfoliated TiSe$_2$ nanoflakes at low temperatures. Unlike the negative magnetoresistance reported in most other transition-metal dichalcogenides, our results cannot be explained by either the conventional two-dimensional weak localization effect or the Kondo effect. A comprehensive analysis of the data suggests that the observed anisotropic negative magnetoresistance in TiSe$_2$ flakes is most likely caused by the three-dimensional weak localization effect. Our findings contribute to a deeper understanding of the phase-coherent transport processes in TiSe$_2$. △ Less

Submitted 20 November, 2024; originally announced November 2024.

Periodic phase diagrams in micromagnetics with an eigenvalue solver

Authors: Fangzhou Ai, Zhuonan Lin, Jiawei Duan, Vitaliy Lomakin

Abstract: This work introduces an approach to compute periodic phase diagram of micromagnetic systems by solving a periodic linearized Landau-Lifshitz-Gilbert (LLG) equation using an eigenvalue solver with the Finite Element Method formalism. The linear operator in the eigenvalue problem is defined as a function of the periodic phase shift wave vector. The dispersion diagrams are obtained by solving the eig… ▽ More This work introduces an approach to compute periodic phase diagram of micromagnetic systems by solving a periodic linearized Landau-Lifshitz-Gilbert (LLG) equation using an eigenvalue solver with the Finite Element Method formalism. The linear operator in the eigenvalue problem is defined as a function of the periodic phase shift wave vector. The dispersion diagrams are obtained by solving the eigenvalue problem for complex eigen frequencies and corresponding eigen states for a range of prescribed wave vectors. The presented approach incorporates a calculation of the periodic effective field, including the exchange and magnetostatic field components. The approach is general in that it allows handling 3D problems with any 1D, 2D, and 3D periodicities. The ability to calculated periodic diagrams provides insights into the spin wave propagation and localized resonances in complex micromagnetic structures. △ Less

Submitted 12 November, 2024; originally announced November 2024.

Unambiguous identification of the indirect band nature of atomically thin hexagonal boron nitride

Authors: Lei Fu, Yuqing Hu, Ning Tang, Junxi Duan, Xionghui Jia, Huaiyuan Yang, Zhuoxian Li, Xiangyan Han, Guoping Li, Jianming Lu, Lun Dai, Weikun Ge, Bo Shen

Abstract: Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band structure, have long remained elusive. In this study, near-resonance excited deep-UV photoluminescence/Raman spectroscopy and deep-UV reflectance contrast spectros… ▽ More Atomically thin hexagonal boron nitride (h-BN), especially monolayer, has garnered increasing attention due to its intriguing optical and light-matter-interaction properties. However, its intrinsic optical properties and electronic band structure, have long remained elusive. In this study, near-resonance excited deep-UV photoluminescence/Raman spectroscopy and deep-UV reflectance contrast spectroscopy are utilized to experimentally investigate the optical properties of atomically thin h-BN across various layer numbers. It is revealed that the absence of luminescence in 1-3 layers h-BN is indicative of their indirect band gap nature, rectifying previously adopted identification of a direct band gap in monolayer BN. Notably, band-edge luminescence signals and indirect bandgap absorption start to appear in 4-layer, and the luminescence intensity increases with the number of layers, suggesting that interlayer interactions and periodicity along the z-axis enhance phonon-assisted indirect bandgap transition, even in the 4-layer case, and furthermore indicating the formation process of flat bands at the K and M valleys as the periodicity along the z direction increases. Additionally, the prominent resonance Raman signals in atomically thin h-BN underscore strong electron-phonon coupling in this material. △ Less

Submitted 16 October, 2024; originally announced October 2024.

Unveiling the Mechanism of Phonon-Polariton Damping in α-MoO_3

Authors: Javier Taboada-Gutiérrez, Yixi Zhou, Ana I. F. Tresguerres-Mata, Christian Lanza, Abel Martínez-Suárez, Gonzalo Álvarez-Pérez, Jiahua Duan, José Ignacio Martín, María Vélez, Iván Prieto, Adrien Bercher, Jérémie Teyssier, Ion Errea, Alexey Y. Nikitin, Javier Martín-Sánchez, Alexey B. Kuzmenko, Pablo Alonso-González

Abstract: Phonon polaritons (PhPs) (light coupled to lattice vibrations) in the highly anisotropic polar layered material molybdenum trioxide (α-MoO_3) are currently the focus of intense research efforts due to their extreme subwavelength field confinement, directional propagation and unprecedented low losses. Nevertheless, prior research has primarily concentrated on exploiting the squeezing and steering c… ▽ More Phonon polaritons (PhPs) (light coupled to lattice vibrations) in the highly anisotropic polar layered material molybdenum trioxide (α-MoO_3) are currently the focus of intense research efforts due to their extreme subwavelength field confinement, directional propagation and unprecedented low losses. Nevertheless, prior research has primarily concentrated on exploiting the squeezing and steering capabilities of α-MoO_3 PhPs, without inquiring much into the dominant microscopic mechanism that determines their long lifetimes, key for their implementation in nanophotonic applications. This study delves into the fundamental processes that govern PhP damping in α-MoO_3 by combining ab initio calculations with scattering-type scanning near-field optical microscopy (s-SNOM) and Fourier-transform infrared (FTIR) spectroscopy measurements across a broad temperature range (from 8 to 300 K). The remarkable agreement between our theoretical predictions and experimental observations allows us to identify third-order anharmonic phonon-phonon scattering as the main damping mechanism of α-MoO_3 PhPs. These findings shed light on the fundamental limits of low-loss PhPs, a crucial factor for assessing their implementation into nanophotonic devices. △ Less

Submitted 19 August, 2024; originally announced August 2024.

Comments: 24 pages, 4 figures

Enhanced Radiation Hardness of InAs/GaAs Quantum Dot Lasers for Space Communication

Authors: Manyang Li, Jianan Duan, Zhiyong Jin, Shujie Pan, Wenkang Zhan, Jinpeng Chen, Jinling Yu, Xiaotian Cheng, Zhibo Ni, Chaoyuan Jin, Tien Khee Ng, Jinxia Kong, Xiaochuan Xu, Yong Yao, Bo Xu, Siming Chen, Zhanguo Wang, Chao Zhao

Abstract: Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing cont… ▽ More Semiconductor lasers have great potential for space laser communication. However, excessive radiation in space can cause laser failure. In principle, quantum dot (QD) lasers are more radiation-resistant than traditional semiconductor lasers because of their superior carrier confinement and smaller active regions. However, the multifaceted nature of radiation effects on QDs resulted in ongoing controversies. Comprehensive testing under simulated space conditions is also necessary to validate their performance. In this work, we conducted radiation tests on various In(Ga)As/GaAs QD and quantum well (QW) materials and devices. Our results revealed that InAs/GaAs QDs with filling factors greater than 50% exhibit greater radiation hardness than those below 50%. Furthermore, most InAs/GaAs QDs showed superior radiation resistance compared to InGaAs/GaAs QW when exposed to low proton fluences of 1E11 and 1E12 cm-2, resulting from radiation-induced defects. The linewidth enhancement factor (LEF) of well-designed QD lasers remains remarkably stable and close to zero, even under proton irradiation at a maximum fluence of 7E13 cm-2, owing to their inherent insensitivity to irradiation-induced defects. These QD lasers demonstrate an exceptional average relative intensity noise (RIN) level of -162 dB/Hz, with only a 1 dB/Hz increase in RIN observed at the highest fluence, indicating outstanding stability. Furthermore, the lasers exhibit remarkable robustness against optical feedback, sustaining stable performance even under a feedback strength as high as -3.1 dB. These results highlight the significant potential of QD lasers for space laser communication applications, where high reliability and resilience to radiation and environmental perturbations are critical. △ Less

Submitted 26 December, 2024; v1 submitted 30 July, 2024; originally announced July 2024.

Comments: 5 figures

Canalization-based super-resolution imaging using a single van der Waals layer

Authors: Jiahua Duan, Aitana Tarazaga Martin-Luengo, Christian Lanza, Stefan Partel, Kirill Voronin, Ana Isabel F. Tresguerres-Mata, Gonzalo Álvarez-Pérez, Alexey Y. Nikitin, J. Martín-Sánchez, P. Alonso-González

Abstract: Canalization is an optical phenomenon that enables unidirectional propagation of light in a natural way, i.e., without the need for predefined waveguiding designs. Predicted years ago, it was recently demonstrated using highly confined phonon polaritons (PhPs) in twisted layers of the van der Waals (vdW) crystal alpha-MoO3, offering unprecedented possibilities for controlling light-matter interact… ▽ More Canalization is an optical phenomenon that enables unidirectional propagation of light in a natural way, i.e., without the need for predefined waveguiding designs. Predicted years ago, it was recently demonstrated using highly confined phonon polaritons (PhPs) in twisted layers of the van der Waals (vdW) crystal alpha-MoO3, offering unprecedented possibilities for controlling light-matter interactions at the nanoscale. However, despite this finding, applications based on polariton canalization have remained elusive so far, which can be explained by the complex sample fabrication of twisted stacks. In this work, we introduce a novel canalization phenomenon, arising in a single vdW thin layer (alpha-MoO3) when it is interfaced with a substrate exhibiting a given negative permittivity, that allows us to demonstrate a proof-of-concept application based on polariton canalization: super-resolution (up to ~λ0/220) nanoimaging. Importantly, we find that canalization-based imaging transcends conventional projection constraints, allowing the super-resolution images to be obtained at any desired location in the image plane. This versatility stems from the synergetic manipulation of three distinct parameters: incident frequency, rotation angle of the thin vdW layer, and thickness. These results provide valuable insights into the fundamental properties of canalization and constitute a seminal step towards multifaceted photonic applications, encompassing imaging, data transmission, and ultra-compact photonic integration. △ Less

Submitted 23 April, 2024; originally announced April 2024.

Comments: 11 pages, 3 figures

High quality Fe1+yTe synthesized by chemical vapor deposition with conspicuous vortex flow

Authors: Lu Lv, Lihong Hu, Weikang Dong, Jingyi Duan, Ping Wang, Peiling Li, Fanming Qu, Li Lu, Zimeng Ye, Junhao Zhao, Jiafang Li, Fang Deng, Guangtong Liu, Jiadong Zhou, Yanfeng Gao

Abstract: Two-dimensional (2D) materials provide an ideal platform to explore novel superconducting behavior including Ising superconductivity, topological superconductivity and Majorana bound states in different 2D stoichiometric Ta-, Nb-, and Fe-based crystals. However, tuning the element content in 2D compounds for regulating their superconductivity has not been realized. In this work, we report the synt… ▽ More Two-dimensional (2D) materials provide an ideal platform to explore novel superconducting behavior including Ising superconductivity, topological superconductivity and Majorana bound states in different 2D stoichiometric Ta-, Nb-, and Fe-based crystals. However, tuning the element content in 2D compounds for regulating their superconductivity has not been realized. In this work, we report the synthesis of high quality Fe1+yTe with tunable Fe content by chemical vapor deposition (CVD). The quality and composition of Fe1+yTe are characterized by Raman spectroscopy, X-ray photoelectron spectroscopy (XPS) and scanning transmission electron microscopy (STEM). The superconducting behavior of Fe1+yTe crystals with varying Fe contents is observed. The superconducting transition of selected Fe1.13Te sample is sharp (ΔTc = 1 K), while Fe1.43Te with a high-Fe content shows a relative broad superconducting transition (ΔTc = 2.6 K) at zero magnetic field. Significantly, the conspicuous vortex flow and a transition from a 3D vortex liquid state to a 2D vortex liquid state is observed in Fe1.43Te sample. Our work highlights the tunability of the superconducting properties of Fe1+yTe and sheds light on the vortex dynamics in Fe-based superconductors, which facilitates us to understand the intrinsic mechanisms of high-temperature superconductivity. △ Less

Submitted 2 April, 2024; originally announced April 2024.

Comments: 30 pages, 15 figures, accepted by Advanced Functional Materials

Thermal and electrostatic tuning of surface phonon-polaritons in LaAlO3/SrTiO3 heterostructures

Authors: Yixi Zhou, Adrien Waelchli, Margherita Boselli, Iris Crassee, Adrien Bercher, Weiwei Luo, Jiahua Duan, J. L. M. van Mechelen, Dirk van der Marel, Jérémie Teyssier, Carl Willem Rischau, Lukas Korosec, Stefano Gariglio, Jean-Marc Triscone, Alexey B. Kuzmenko

Abstract: Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phono… ▽ More Phonon polaritons are promising for infrared applications due to a strong light-matter coupling and subwavelength energy confinement they offer. Yet, the spectral narrowness of the phonon bands and difficulty to tune the phonon polariton properties hinder further progress in this field. SrTiO3 - a prototype perovskite oxide - has recently attracted attention due to two prominent far-infrared phonon polaritons bands, albeit without any tuning reported so far. Here we show, using cryogenic infrared near-field microscopy, that long-propagating surface phonon polaritons are present both in bare SrTiO3 and in LaAlO3/SrTiO3 heterostructures hosting a two-dimensional electron gas. The presence of the two-dimensional electron gas increases dramatically the thermal variation of the upper limit of the surface phonon polariton band due to temperature dependent polaronic screening of the surface charge carriers. Furthermore, we demonstrate a tunability of the upper surface phonon polariton frequency in LaAlO3/SrTiO3 via electrostatic gating. Our results suggest that oxide interfaces are a new platform bridging unconventional electronics and long-wavelength nanophotonics. △ Less

Submitted 13 November, 2023; originally announced December 2023.

Comments: Nature Communications, in press

Journal ref: Nature Communications 14, 7686 (2023)

Multiple and spectrally robust photonic magic angles in reconfigurable α-MoO3 trilayers

Authors: J. Duan, G. Álvarez-Pérez, C. Lanza, A. I. F. Tresguerres-Mata, K. Voronin, N. Capote-Robayna, A. Tarazaga Martín-Luengo, J. Martín-Sánchez, V. S. Volkov, A. Y. Nikitin, P. Alonso-González

Abstract: The assembling of twisted stacks of van der Waals (vdW) materials had led to the discovery of a profusion of remarkable physical phenomena in recent years, as it provides a means to accurately control and harness electronic band structures. This has given birth to the so-called field of twistronics. An analogous concept has been developed for highly confined polaritons, or nanolight, in twisted bi… ▽ More The assembling of twisted stacks of van der Waals (vdW) materials had led to the discovery of a profusion of remarkable physical phenomena in recent years, as it provides a means to accurately control and harness electronic band structures. This has given birth to the so-called field of twistronics. An analogous concept has been developed for highly confined polaritons, or nanolight, in twisted bilayers of strongly anisotropic vdW materials, extending the field to the twistoptics realm. In this case, the emergence of a topological transition of the polaritonic dispersion at a given twist angle (photonic magic angle) results in the propagation of nanolight along one specific direction (canalization regime), holding promises for unprecedented control of the flow of energy at the nanoscale. However, there is a fundamental limitation in twistoptics that critically impedes such control: there is only one photonic magic angle (and thus canalization direction) in a twisted bilayer and it is fixed for each incident frequency. Here, we overcome this limitation by demonstrating the existence of multiple spectrally robust photonic magic angles in reconfigurable twisted vdW trilayers. As a result, we show that canalization of nanolight can be programmed at will along any desired in-plane direction in a single device, and, importantly, within broad spectral ranges of up to 70 cm-1. Our findings lay the foundation for robust and widely tunable twistoptics, opening the door for applications in nanophotonics where on-demand control of energy at the nanoscale is crucial, such as thermal management, nanoimaging or entanglement of quantum emitters. △ Less

Submitted 7 November, 2023; originally announced November 2023.

Comments: 16 pages, 3 figures

Journal ref: Nat. Mater. 22, 867-872 (2023)

Predictable gate-field control of spin in altermagnets with spin-layer coupling

Authors: Run-Wu Zhang, Chaoxi Cui, Runze Li, Jingyi Duan, Lei Li, Zhi-Ming Yu, Yugui Yao

Abstract: Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control through the electric field is generally more practical, and has become a focal point in the field of spintronics. Current methodologies for generating spin pol… ▽ More Spintronics, a technology harnessing electron spin for information transmission, offers a promising avenue to surpass the limitations of conventional electronic devices. While the spin directly interacts with the magnetic field, its control through the electric field is generally more practical, and has become a focal point in the field of spintronics. Current methodologies for generating spin polarization via an electric field generally necessitate spin-orbit coupling. Here, we propose an innovative mechanism that accomplishes this task without dependence on spin-orbit coupling. Our method employs two-dimensional altermagnets with valley-mediated spin-layer coupling (SLC), in which electronic states display symmetry-protected and valley-contrasted spin and layer polarization. The SLC facilitates predictable, continuous, and reversible control of spin polarization using a gate electric field. Through symmetry analysis and ab initio calculations, we pinpoint high-quality material candidates that exhibit SLC. We ascertain that applying a gate field of $0.2$ eV/Å~ to monolayer Ca(CoN)$_2$ can induce significant spin splitting up to 123 meV. As a result, perfect and switchable spin/valley-currents, and substantial tunneling magnetoresistance can be achieved in these materials using only a gate field. These findings provide new opportunities for generating predictable spin polarization and designing novel spintronic devices based on coupled spin, valley and layer physics. △ Less

Submitted 15 June, 2023; originally announced June 2023.

Journal ref: Physical Review Letters 133, 056401 (2024)

Effective manipulation and realization of a colossal nonlinear Hall effect in an electric-field tunable moiré system

Authors: Jinrui Zhong, Junxi Duan, Shihao Zhang, Huimin Peng, Qi Feng, Yuqin Hu, Qinsheng Wang, Jinhai Mao, Jianpeng Liu, Yugui Yao

Abstract: The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from both the Berry curvature dipole and the chiral Bloch electron skew scatterings, reflecting various information of the lattice symmetries, band dispersions, and t… ▽ More The second-order nonlinear Hall effect illuminates a frequency-doubling transverse current emerging in quantum materials with broken inversion symmetry even when time-reversal symmetry is preserved. This nonlinear response originates from both the Berry curvature dipole and the chiral Bloch electron skew scatterings, reflecting various information of the lattice symmetries, band dispersions, and topology of the electron wavefunctions. Even though many efforts have been put in detecting the nonlinear Hall effect in diverse condensed matter systems, effective manipulation of the two principal mechanisms in a single system has been lacking, and the reported response is relatively weak. Here, we report effective manipulation of the nonlinear Hall effect and realization of a colossal second-order Hall conductivity, $\sim500 μmSV^{-1}$, orders of magnitudes higher than the reported values, in AB-BA stacked twisted double bilayer graphene. A Berry-curvature-dipole-dominated nonlinear Hall effect, as well as its controllable transition to skew-scattering-dominated response, is identified near the band edge. The colossal response, on the other hand, is detected near the van Hove singularities, mainly determined by the skew scattering of the chiral Bloch electrons. Our findings establish electrically tunable moiré systems promising for nonlinear Hall effect manipulations and applications. △ Less

Submitted 28 January, 2023; originally announced January 2023.

Comments: 17 pages, 4 figures

Perspectives on Antiferromagnetic Spintronics

Authors: Kang Wang, Vineetha Bheemarasetty, Junhang Duan, Shiyu Zhou, Gang Xiao

Abstract: Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these materials. Antiferromagnets claim to resolve many of these shortcomings leading to faster, smaller, more energy-efficient, and more robust electronics. Antiferromagnets… ▽ More Although the development of spintronic devices has advanced significantly over the past decade with the use of ferromagnetic materials, the extensive implementation of such devices has been limited by the notable drawbacks of these materials. Antiferromagnets claim to resolve many of these shortcomings leading to faster, smaller, more energy-efficient, and more robust electronics. Antiferromagnets exhibit many desirable properties including zero net magnetization, imperviousness to external magnetic fields, intrinsic high-frequency dynamics with a characteristic precession frequency on the order of terahertz (THz), and the ability to serve as passive exchange-bias materials in multiple magnetoresistance (MR)- based devices. In this Perspective article, we will discuss the fundamental physics of magnetic structures in antiferromagnets and their interactions with external stimuli such as spin current, voltage, and magnons. A discussion on the challenges lying ahead is also provided along with an outlook of future research directions of these systems. △ Less

Submitted 2 November, 2022; v1 submitted 29 September, 2022; originally announced September 2022.

Comments: Insufficient discussions on electrical manipulation and detection of antiferromagnetic order

Twist-tunable Polaritonic Nanoresonators in a van der Waals Crystal

Authors: O. G. Matveeva, A. I. F. Tresguerres-Mata, R. V. Kirtaev, K. V. Voronin, J. Taboada-Gutiérrez, C. Lanza-García, J. Duan, J. Martín-Sánchez, V. S. Volkov, P. Alonso-González, A. Y. Nikitin

Abstract: Optical nanoresonators are fundamental building blocks in a number of nanotechnology applications (e.g. in spectroscopy) due to their ability to efficiently confine light at the nanoscale. Recently, nanoresonators based on the excitation of phonon polaritons (PhPs) $-$ light coupled to lattice vibrations $-$ in polar crystals (e.g. SiC, or h-BN) have attracted much attention due to their strong fi… ▽ More Optical nanoresonators are fundamental building blocks in a number of nanotechnology applications (e.g. in spectroscopy) due to their ability to efficiently confine light at the nanoscale. Recently, nanoresonators based on the excitation of phonon polaritons (PhPs) $-$ light coupled to lattice vibrations $-$ in polar crystals (e.g. SiC, or h-BN) have attracted much attention due to their strong field confinement, high-quality factors, and potential to enhance the photonic density of states at mid-infrared (IR) frequencies. Here, we go one step further by introducing PhPs nanoresonators that not only exhibit these extraordinary properties but also incorporate a new degree of freedom $-$ twist tuning, i.e. the possibility to be spectrally controlled by a simple rotation. To that end, we both take advantage of the low-loss in-plane hyperbolic propagation of PhPs in the van der Waals crystal $α$-MoO$_3$, and realize dielectric engineering of a pristine $α$-MoO$_3$ slab placed on top of metal ribbon grating, which preserves the high-quality of the polaritonic resonances. By simple rotating the $α$-MoO$_3$ slab in the plane (from 0 to 45$^{\circ}$), we demonstrate via far- and near-field measurements that the narrow polaritonic resonances (with quality factors Q up to 200) can be tuned in a broad range (up to 32 cm$^{-1}$, i.e up 6 ~ times its full width at half maximum, FWHM ~ 5 cm$^{-1}$). Our results open the door to the development of tunable low-loss nanotechnologies at IR frequencies with application in sensing, emission or photodetection. △ Less

Submitted 29 June, 2022; originally announced June 2022.

Comments: 34 pages, 10 figures, including supplementary information. Submitted to Nano Letters

Resonant Electric Probe to Axionic Dark Matter

Authors: Junxi Duan, Yu Gao, Chang-Yin Ji, Sichun Sun, Yugui Yao, Yun-Long Zhang

Abstract: The oscillating light axion field is known as wave dark matter. We propose an LC-resonance enhanced detection of the narrow band electric signals induced by the axion dark matter using a solenoid magnet facility. We provide full 3D electromagnetic simulation results for the signal electric field. The electric signal is enhanced by the high $Q$-factor of a resonant LC circuit and then amplified and… ▽ More The oscillating light axion field is known as wave dark matter. We propose an LC-resonance enhanced detection of the narrow band electric signals induced by the axion dark matter using a solenoid magnet facility. We provide full 3D electromagnetic simulation results for the signal electric field. The electric signal is enhanced by the high $Q$-factor of a resonant LC circuit and then amplified and detected by the state-of-the-art cryogenic electrical transport measurement technique. The cryogenic amplifier noise is the dominant noise source in the proposed detection system. We estimate that the detection system can have a promising sensitivity to axion dark matter with mass below $10^{-6}$ eV. The projected sensitivities improve with the size of the magnetic field, and the electric signal measurement can be potentially sensitive to the quantum chromodynamics (QCD) axion with $g_{aγ} \sim 10^{-16}$ GeV$^{-1}$ around $m_a \sim 10^{-8}$eV, with a multi-meter scale magnetized region. This limit is around five orders of magnitude below the current constraint from the cosmic rays. △ Less

Submitted 1 May, 2023; v1 submitted 27 June, 2022; originally announced June 2022.

Comments: 8 pages, 5 figures. V2 added more comments on the key innovation points and signal discussion. V3 published version typo corrected

Dielectric constant of gray Tin: A first-principles study

Authors: Jinsong Duan

Abstract: $α$-Sn (gray tin) is a group-IV, zero-gap semiconductor with potential use in infrared detectors, necessitating a clear understanding of its dielectric properties. We report the first-principles calculations of the band structure and dielectric function of $α… ▽ More $α$-Sn (gray tin) is a group-IV, zero-gap semiconductor with potential use in infrared detectors, necessitating a clear understanding of its dielectric properties. We report the first-principles calculations of the band structure and dielectric function of $α$-Sn using density functional theory, emphasizing the effects of strain, spin-orbit interaction, and pseudo-potentials on the electronic and optical properties of $α$-Sn in the infrared region (photon energy $<$ 1eV). In $α$-Sn, spin-orbit coupling greatly influences the electronic band structure that leads to unusual optical behavior. We explain an apparently anomalous absorption at $\sim$ 0.41 eV caused by interbank transitions within the valence band. Infrared spectroscopic ellipsometry on several $α$-Sn films grown by molecular beam epitaxy validate our band-structure calculations. Our computational methods and results are discussed in detail. △ Less

Submitted 7 December, 2022; v1 submitted 17 May, 2022; originally announced May 2022.

Comments: My previous management did not to publish this article in arXiv.org. I have obligation to withdraw it from arXiv.org. arXiv admin note: author list truncated

First-principles study of oxygen vacancy defects in orthorhombic Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack

Authors: Junshuai Chai, Hao Xu, Jinjuan Xiang, Yuanyuan Zhang, Shujing Zhao, Fengbin Tian, Jiahui Duan, Kai Han, Xiaolei Wang, Jun Luo, Wenwu Wang, Tianchun Ye

Abstract: The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not… ▽ More The gate defect of the ferroelectric HfO$_2$-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. The first-principles calculations are an effective method for the atomic-scale understanding of gate defects. However, the first-principles study on the defects of FeFET gate stacks, i.e., metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si structure, has not been reported so far. The key challenge is the construction of metal/orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack models. Here, we use the Hf$_{0.5}$Zr$_{0.5}$O$_2$(130) high-index crystal face as the orthorhombic ferroelectric layer and construct a robust atomic structure of the orthorhombic-Hf$_{0.5}$Zr$_{0.5}$O$_2$/SiO$_2$/Si gate stack without any gap states. Its high structural stability is ascribed to the insulated interface. The calculated band offsets show that this gate structure is of the type-I band alignment. Furthermore, the formation energies and charge transition levels (CTLs) of defects reveal that the oxygen vacancy defects are more favorable to form compared with other defects such as oxygen interstitial and Hf/Zr vacancy, and their CTLs are mainly localized near the Si conduction band minimum and valence band maximum, in agreement with the reported experimental results. The oxygen vacancy defects are responsible for charge trapping/de-trapping behavior in Si FeFET. This work provides an insight into gate defects and paves the way to carry out the first-principles study of ferroelectric HfO$_2$-based Si FeFET. △ Less

Submitted 20 June, 2022; v1 submitted 28 April, 2022; originally announced April 2022.

Comments: 18 pages, 5 figures

Inventory of high-quality flat-band van der Waals materials

Authors: Jingyi Duan, Da-Shuai Ma, Run-Wu Zhang, Zeying Zhang, Chaoxi Cui, Wei Jiang, Zhi-Ming Yu, Yugui Yao

Abstract: More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-thr… ▽ More More is left to do in the field of flat bands besides proposing theoretical models. One unexplored area is the flat bands featured in the van der Waals (vdW) materials. Exploring more flat-band material candidates and moving the promising materials toward applications have been well recognized as the cornerstones for the next-generation high-efficiency devices. Here, we utilize a powerful high-throughput tool to screen desired vdW materials based on the Inorganic Crystal Structure Database. Through layers of filtration, we obtained 861 potential monolayers from 4997 vdW materials. Significantly, it is the first example to introduce flat-band electronic properties in the vdW materials and propose three families of representative flat-band materials by mapping two-dimensional (2D) flat-band lattice models. Unlike existing screening schemes, a simple, universal rule, i.e., 2D flat-band score criterion, is first proposed to efficiently identify 229 high-quality flat-band candidates, and guidance is provided to diagnose the quality of 2D flat bands. All these efforts to screen experimental available flat-band candidates will certainly motivate continuing exploration towards the realization of this class of special materials and their applications in material science. △ Less

Submitted 2 April, 2022; originally announced April 2022.

Quantum transport evidence of the boundary states and Lifshitz transition in Bi$_4$Br$_4$

Authors: Dong-Yun Chen, Dashuai Ma, Junxi Duan, Dong Chen, Haiwen Liu, Junfeng Han, Yugui Yao

Abstract: The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crystals. Two electron-type samples with different electron concentrations are investigated. Both samples have saturation resistivity behavior in low temper… ▽ More The quasi-one-dimensional van der Waals compound Bi$_4$Br$_4$ was recently found to be a promising high-order topological insulator with exotic electronic states. In this paper, we study the electrical transport properties of Bi$_4$Br$_4$ bulk crystals. Two electron-type samples with different electron concentrations are investigated. Both samples have saturation resistivity behavior in low temperature. In the low-concentration sample, two-dimensional quantum oscillations are clearly observed in the magnetoresistance measurements, which are attributed to the band-bending-induced surface state on the (001) facet. In the high-concentration sample, the angular magnetoresistance exhibits two pairs of symmetrical sharp valleys with an angular difference close to the angle between the crystal planes (001) and (100). The additional valley can be explained by the contribution of the boundary states on the (100) facet. Besides, Hall measurements at low temperatures reveal an anomalous decrease of electron concentration with increasing temperature, which can be explained by the temperature-induced Lifshitz transition. These results shed light on the abundant surface and boundary state transport signals and the temperature-induced Lifshitz transition in Bi$_4$Br$_4$. △ Less

Submitted 12 March, 2022; originally announced March 2022.

Tuning the competition between superconductivity and charge order in kagome superconductor Cs(V1-xNbx)3Sb5

Authors: Yongkai Li, Qing Li, Xinwei Fan, Jinjin Liu, Qi Feng, Min Liu, Chunlei Wang, Jia-Xin Yin, Junxi Duan, Xiang Li, Zhiwei Wang, Hai-Hu Wen, Yugui Yao

Abstract: The recently discovered coexistence of superconductivity and charge density wave order in the kagome systems AV3Sb5 (A = K, Rb, Cs) has stimulated enormous interest. According to theory, a vanadium-based kagome system may host a flat band, nontrivial linear dispersive Dirac surface states and electronic correlation. Despite intensive investigations, it remains controversial about the origin of the… ▽ More The recently discovered coexistence of superconductivity and charge density wave order in the kagome systems AV3Sb5 (A = K, Rb, Cs) has stimulated enormous interest. According to theory, a vanadium-based kagome system may host a flat band, nontrivial linear dispersive Dirac surface states and electronic correlation. Despite intensive investigations, it remains controversial about the origin of the charge density wave (CDW) order, how does the superconductivity relate to the CDW, and whether the anomalous Hall effect (AHE) arises primarily from the kagome lattice or the CDW order. We report an extensive investigation on Cs(V1-xNbx)3Sb5 samples with systematic Nb doping. Our results show that the Nb doping induces apparent suppression of CDW order and promotes superconductivity; meanwhile, the AHE and magnetoresistance (MR) will be significantly weakened together with the CDW order. Combining with our density functional calculations, we interpret these effects by an antiphase shift of the Fermi energy with respect to the saddle points near M and the Fermi surface centered around Γ. It is found that the former depletes the filled states for the CDW instability and worsens the nesting condition for CDW order; while the latter lifts the Fermi level upward and enlarges the Fermi surface surrounding the Γ point, and thus promotes superconductivity. Our results uncover a delicate but unusual competition between the CDW order and superconductivity. △ Less

Submitted 7 March, 2022; originally announced March 2022.

Elucidating the Degradation Mechanism of Gd2Zr2O7 Waste Form under Multi-Energy He Ion Irradiation

Authors: Junjing Duan, Zhangyi Huang, Xunxiang Hu, Haomin Wang, Yao Yang, Esra Y. Mertsoy, Di Wu, Jianqi Qi, Tiecheng Lu

Abstract: We studied the microstructural and helium bubbling evolutions of Gd2Zr2O7 waste form with immobilized TRPO (50 wt%) under multi-energy He ion irradiation. Three structurally heterogeneous regions for the Gd2Zr2O7 waste form were found as a function of the depth from the He-irradiated surface. Specifically, at a depth less than 40 nm below the He-irradiated surface (Region I) the Gd2Zr2O7 waste for… ▽ More We studied the microstructural and helium bubbling evolutions of Gd2Zr2O7 waste form with immobilized TRPO (50 wt%) under multi-energy He ion irradiation. Three structurally heterogeneous regions for the Gd2Zr2O7 waste form were found as a function of the depth from the He-irradiated surface. Specifically, at a depth less than 40 nm below the He-irradiated surface (Region I) the Gd2Zr2O7 waste form is completely amorphous with large spherical He bubbles (5-25 nm). In the intermediate region, Region II, (40-800 nm) partially amorphized Gd2Zr2O7 waste form accompanied with ribbon-like He bubbles that may lead to the formation of microcracks is observed. The crystallinity is not impacted in Region III for a depth of more than 800 nm. For the first time, we elucidated that the Gd2Zr2O7 waste form, which was considered to be structurally intact at 100 dpa, is completely amorphized at 6.5 dpa with the synergistic displacement damage, electronic energy loss, and He concentration enabled. This study leads to new physical insights into amorphization and He bubbles formation mechanisms of Gd2Zr2O7 waste form under multi-energy He irradiation, which is essential for the design and optimization of irradiation-resistant ceramic waste matrices. △ Less

Submitted 17 February, 2022; originally announced February 2022.

Giant second-order nonlinearity in twisted bilayer graphene

Authors: Junxi Duan, Yu Jian, Yang Gao, Huimin Peng, Jinrui Zhong, Qi Feng, Yugui Yao

Abstract: In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The s… ▽ More In the second-order response regime, the Hall voltage can be nonzero without breaking the time-reversal symmetry, as long as the system is noncentrosymmetric. There are multiple mechanisms with different scaling rules that contribute to the nonlinear Hall effect (NLHE). The intrinsic contribution is closely related to the Berry curvature dipole and has been extensively investigated recently. The study of the extrinsic contribution, however, is scarce, although it can enter the NLHE even in the leading order. Here, we report a giant nonlinear transport response in TBG, in which the intrinsic mechanism is forbidden. The magnitude and direction of the second-order nonlinearity can be effectively tuned by the gate voltage. The peak value of the second-order Hall conductivity close to the full filling of the moiré band reaches 8.76 $μmSV^{-1}$, four-order larger than those detected in $WTe_2$. The observed giant second-order nonlinearity can be understood from the collaboration of the asymmetric scattering of electrons off the static (Coulomb impurities) and dynamic disorders (phonons) in noncentrosymmetric crystals. It is mainly determined by the skew-scattering contribution from impurities at 1.7 K. The skew-scattering from phonons has a much larger coupling coefficient as suggested by the scaling results, and becomes as important as the impurity contribution as the temperature rises. Our observations demonstrate the potential of TBG in studying nonlinear response and possible rectification applications. △ Less

Submitted 20 April, 2022; v1 submitted 23 January, 2022; originally announced January 2022.

Comments: An updated version, with supplementary included. 21 pages, 8 figures

Wafer-Scale Epitaxy of Flexible Nitride Films with Superior Plasmonic and Superconducting Performance

Authors: Ruyi Zhang, Xinyan Li, Fanqi Meng, Jiachang Bi, Shunda Zhang, Shaoqin Peng, Jie Sun, Xinming Wang, Liang Wu, Junxi Duan, Hongtao Cao, Qinghua Zhang, Lin Gu, Liang-Feng Huang, Yanwei Cao

Abstract: Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for developing high-performance flexible photonics… ▽ More Transition-metal nitrides (e.g., TiN, ZrN, TaN) are incredible materials with excellent complementary-metal-oxide-semiconductor compatibility and remarkable performance in refractory plasmonics and superconducting quantum electronics. Epitaxial growth of flexible transition-metal nitride films, especially at wafer-scale, is fundamentally important for developing high-performance flexible photonics and superconducting electronics, but the study is rare thus far. This work reports the high-quality epitaxy of 2-inch titanium nitride (TiN) films on flexible fluorophlogopite-mica (F-mica) substrates via reactive magnetron sputtering. Combined measurements of spectroscopic ellipsometer and electrical transport reveal the superior plasmonic and superconducting performance of TiN/F-mica films owing to the high single crystallinity. More interestingly, the superconductivity of these flexible TiN films can be manipulated by the bending states, and enhanced superconducting critical temperature TC is observed in convex TiN films with in-plane tensile strain. Density-functional-theory calculations uncover that the strain can tune the electron-phonon interaction strength and resultant superconductivity of TiN films. This study provides a promising route towards integrating scalable single-crystalline conductive transition-metal nitride films with flexible electronics for high-performance plasmonics and superconducting electronics. △ Less

Submitted 6 December, 2021; originally announced December 2021.

Active tuning of highly anisotropic phonon polaritons in van der Waals crystal slabs by gated graphene

Authors: Gonzalo Álvarez-Pérez, Arturo González-Morán, Nathaniel Capote-Robayna, Kirill V. Voronin, Jiahua Duan, Valentyn S. Volkov, Pablo Alonso-González, Alexey Y. Nikitin

Abstract: Phonon polaritons (PhPs) -- lattice vibrations coupled to electromagnetic fields -- in highly anisotropic media display a plethora of intriguing optical phenomena (including ray-like propagation, anomalous refraction, and topological transitions, among others), which have potential for unprecedented manipulation of the flow of light at the nanoscale. However, the propagation properties of these Ph… ▽ More Phonon polaritons (PhPs) -- lattice vibrations coupled to electromagnetic fields -- in highly anisotropic media display a plethora of intriguing optical phenomena (including ray-like propagation, anomalous refraction, and topological transitions, among others), which have potential for unprecedented manipulation of the flow of light at the nanoscale. However, the propagation properties of these PhPs are intrinsically linked to the anisotropic crystal structure of the host material. Although in-plane anisotropic PhPs can be steered (and even canalized) by twisting individual crystal slabs in a van der Waals (vdW) stack, active control of their propagation via external stimuli presents a significant challenge. Here, we report on a technology in which anisotropic PhPs supported by biaxial vdW slabs are actively tunable by simply gating an integrated graphene layer. Excitingly, we predict active tuning of optical topological transitions, which enable controlling the canalization of PhPs along different in-plane directions in twisted heterostructures. Apart from their fundamental interest, our findings hold promises for the development of optoelectronic devices (sensors, photodetectors, etc.) based on PhPs with dynamically controllable properties. △ Less

Submitted 22 October, 2021; originally announced October 2021.

Chlorine doping of MoSe2 flakes by ion implantation

Authors: Slawomir Prucnal, Arsalan Hashemi, Mahdi Ghorbani-Asl, René Hübner, Juanmei Duan, Yidan Wei, Divanshu Sharma, Dietrich R. T. Zahn, René Ziegenrücker, Ulrich Kentsch, Arkady V. Krasheninnikov, Manfred Helm, Shengqiang Zhou

Abstract: The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrat… ▽ More The efficient integration of transition metal dichalcogenides (TMDs) into the current electronic device technology requires mastering the techniques of effective tuning of their optoelectronic properties. Specifically, controllable doping is essential. For conventional bulk semiconductors, ion implantation is the most developed method offering stable and tunable doping. In this work, we demonstrate n-type doping in MoSe2 flakes realized by low-energy ion implantation of Cl+ ions followed by millisecond-range flash lamp annealing (FLA). We further show that FLA for 3 ms with a peak temperature of about 1000 °C is enough to recrystallize implanted MoSe2. The Cl distribution in few-layer-thick MoSe2 is measured by secondary ion mass spectrometry. An increase in the electron concentration with increasing Cl fluence is determined from the softening and red shift of the Raman-active A_1g phonon mode due to the Fano effect. The electrical measurements confirm the n-type doping of Cl-implanted MoSe2. A comparison of the results of our density functional theory calculations and experimental temperature-dependent micro-Raman spectroscopy data indicates that Cl atoms are incorporated into the atomic network of MoSe2 as substitutional donor impurities. △ Less

Submitted 24 September, 2021; originally announced September 2021.

Comments: 32 pages, 10 figures

Journal ref: Nanoscale 13, 5834 (2021)

Enhanced trion emission in monolayer MoSe2 by constructing a type-I van der Waals heterostructure

Authors: Juanmei Duan, Phanish Chava, Mahdi Ghorbani-Asl, Denise Erb, Liang Hu, Arkady V. Krasheninnikov, Harald Schneider, Lars Rebohle, Artur Erbe, Manfred Helm, Yu-Jia Zeng, Shengqiang Zhou, Slawomir Prucnal

Abstract: Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is impo… ▽ More Trions, quasi-particles consisting of two electrons combined with one hole or of two holes with one electron, have recently been observed in transition metal dichalcogenides (TMDCs) and drawn increasing attention due to potential applications of these materials in light-emitting diodes, valleytronic devices as well as for being a testbed for understanding many-body phenomena. Therefore, it is important to enhance the trion emission and its stability. In this study, we construct a MoSe2/FePS3 van der Waals heterostructure (vdWH) with type-I band alignment, which allows for carriers injection from FePS3 to MoSe2. At low temperatures, the neutral exciton (X0) emission in this vdWH is almost completely suppressed. The ITrion/Ix0 intensity ratio increases from 0.44 in a single MoSe2 monolayer to 20 in this heterostructure with the trion charging state changing from negative in the monolayer to positive in the heterostructure. The optical pumping with circularly polarized light shows a 14% polarization for the trion emission in MoSe2/FePS3. Moreover, forming such type-I vdWH also gives rise to a 20-fold enhancement of the room temperature photoluminescence from monolayer MoSe2. Our results demonstrate a novel approach to convert excitons to trions in monolayer 2D TMDCs via interlayer doping effect using type-I band alignment in vdWH. △ Less

Submitted 26 July, 2021; originally announced July 2021.

Comments: 21 pages, including the suppl. materials, accepted at Adv. Fun. Mater

One-step epitaxy of high-mobility La-doped BaSnO3 films by high-pressure magnetron sputtering

Authors: Ruyi Zhang, Xinyan Li, Jiachang Bi, Shunda Zhang, Shaoqin Peng, Yang Song, Qinghua Zhang, Lin Gu, Junxi Duan, Yanwei Cao

Abstract: As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high… ▽ More As a unique perovskite transparent oxide semiconductor, high-mobility La-doped BaSnO3 films have been successfully synthesized by molecular beam epitaxy and pulsed laser deposition. However, it remains a big challenge for magnetron sputtering, a widely applied technique suitable for large-scale fabrication, to grow high-mobility La-doped BaSnO3 films. Here, we developed a method to synthesize high-mobility epitaxial La-doped BaSnO3 films (mobility up to 121 cm2V-1s-1 at the carrier density ~ 4.0 x 10^20 cm-3 at room temperature) directly on SrTiO3 single crystal substrates using high-pressure magnetron sputtering. The structural and electrical properties of the La-doped BaSnO3 films were characterized by combined high-resolution X-ray diffraction, X-ray photoemission spectroscopy, and temperature-dependent electrical transport measurements. The room temperature electron mobility of La-doped BaSnO3 films in this work is 2 to 4 times higher than the reported values of the films grown by magnetron sputtering. Moreover, in the high carrier density range (n > 3 x 10^20 cm-3), the electron mobility value of 121 cm2V-1s-1 in our work is among the highest values for all reported doped BaSnO3 films. It is revealed that high argon pressure during sputtering plays a vital role in stabilizing the fully relaxed films and inducing oxygen vacancies, which benefit the high mobility at room temperature. Our work provides an easy and economical way to massively synthesize high-mobility transparent conducting films for transparent electronics. △ Less

Submitted 10 May, 2021; originally announced May 2021.

Comments: 15 pages, 6 figures

Electronic nature of chiral charge order in the kagome superconductor CsV3Sb5

Authors: Zhiwei Wang, Yu-Xiao Jiang, Jia-Xin Yin, Yongkai Li, Guan-Yong Wang, Hai-Li Huang, Shen Shao, Jinjin Liu, Peng Zhu, Nana Shumiya, Md Shafayat Hossain, Hongxiong Liu, Youguo Shi, Junxi Duan, Xiang Li, Guoqing Chang, Pengcheng Dai, Zijin Ye, Gang Xu, Yanchao Wang, Hao Zheng, Jinfeng Jia, M. Zahid Hasan, Yugui Yao

Abstract: Kagome superconductors with Tc up to 7K have been discovered over 40 years. Recently, unconventional chiral charge order has been reported in kagome superconductor KV3Sb5, with an ordering temperature of one order of magnitude higher than the TC. However, the chirality of the charge order has not been reported in the cousin kagome superconductor CsV3Sb5, and the electronic nature of the chirality… ▽ More Kagome superconductors with Tc up to 7K have been discovered over 40 years. Recently, unconventional chiral charge order has been reported in kagome superconductor KV3Sb5, with an ordering temperature of one order of magnitude higher than the TC. However, the chirality of the charge order has not been reported in the cousin kagome superconductor CsV3Sb5, and the electronic nature of the chirality remains elusive. In this letter, we report the observation of electronic chiral charge order in CsV3Sb5 via scanning tunneling microscopy (STM). We observe a 2x2 charge modulation and a 1x4 superlattice in both topographic data and tunneling spectroscopy. 2x2 charge modulation is highly anticipated as a charge order by fundamental kagome lattice models at van Hove filling, and is shown to exhibit intrinsic chirality. We find that the 1x4 superlattices forms various small domain walls, and can be a surface effect as supported by our first-principles calculations. Crucially, we find that the amplitude of the energy gap opened by the charge order exhibits real space modulations, and features 2x2 wave vectors with chirality, highlighting the electronic nature of the chiral charge order. STM study at 0.4K reveals a superconducting energy gap with a gap size 2Δ=0.85meV, which estimates a moderate superconductivity coupling strength with 2Δ/kBTc=3.9. When further applying a c-axis magnetic field, vortex core bound states are observed within this gap, indicative of clean-limit superconductivity. △ Less

Submitted 25 August, 2021; v1 submitted 10 May, 2021; originally announced May 2021.

Journal ref: Phys. Rev. B 104, 075148 (2021)

Focusing of in-plane hyperbolic polaritons in van der Waals crystals with tailored infrared nanoantennas

Authors: Javier Martín-Sánchez, Jiahua Duan, Javier Taboada-Gutiérrez, Gonzalo Álvarez-Pérez, Kirill V. Voronin, Iván Prieto, Weiliang Ma, Qiaoliang Bao, Valentyn S. Volkov, Rainer Hillenbrand, Alexey Y. Nikitin, Pablo Alonso-González

Abstract: Phonon polaritons (PhPs),light coupled to lattice vibrations,with in-plane hyperbolic dispersion exhibit ray-like propagation with large wavevectors and enhanced density of optical states along certain directions on a surface. As such, they have raised a surge of interest as they promise unprecedented possibilities for the manipulation of infrared light with planar circuitry and at the nanoscale.… ▽ More Phonon polaritons (PhPs),light coupled to lattice vibrations,with in-plane hyperbolic dispersion exhibit ray-like propagation with large wavevectors and enhanced density of optical states along certain directions on a surface. As such, they have raised a surge of interest as they promise unprecedented possibilities for the manipulation of infrared light with planar circuitry and at the nanoscale. Here, we demonstrate, for the first time, the focusing of in-plane hyperbolic PhPs propagating along thin slabs of MoO3. To that end, we developed metallic nanoantennas of convex geometries for both the efficient launching and focusing of the polaritons. Remarkably, the foci obtained exhibit enhanced near-field confinement and absorption compared to foci produced by in-plane isotropic PhPs. More intriguingly, foci sizes as small as lamdap/5 =lamda0/50 were achieved (lamdap is the polariton wavelength and lamda0 the photon wavelength). Focusing of in-plane hyperbolic polaritons introduces a first and most basic building block developing planar polariton optics utilizing in-plane anisotropic van der Waals materials and metasurfaces. △ Less

Submitted 19 March, 2021; originally announced March 2021.

Planar nano-optics in anisotropic media: anomalous refraction and diffraction-free lensing of highly confined polaritons

Authors: J. Duan, G. Álvarez-Pérez, A. I. F. Tresguerres-Mata, J. Taboada-Gutiérrez, K. V. Voronin, A. Bylinkin, B. Chang, S. Xiao, S. Liu, J. H. Edgar, J. I. Martín, V. S. Volkov, R. Hillenbrand, J. Martín-Sánchez, A. Y. Nikitin, P. Alonso-González

Abstract: As one of the most fundamental optical phenomena, refraction between isotropic media is characterized by light bending towards the normal to the boundary when passing from a low- to a high-refractive-index medium. However, in anisotropic media, refraction is a much more exotic phenomenon. The most general case of refraction between two anisotropic media remains unexplored, particularly in natural… ▽ More As one of the most fundamental optical phenomena, refraction between isotropic media is characterized by light bending towards the normal to the boundary when passing from a low- to a high-refractive-index medium. However, in anisotropic media, refraction is a much more exotic phenomenon. The most general case of refraction between two anisotropic media remains unexplored, particularly in natural media and at the nanoscale. Here, we visualize and comprehensively study refraction of electromagnetic waves between two strongly anisotropic (hyperbolic) media, and, importantly, we do it with the use of polaritons confined to the nanoscale in a low-loss natural medium, alpha-MoO3. Our images show refraction of polaritons under the general case in which both the direction of propagation and the wavevector are not collinear. As they traverse planar nanoprisms tailored in alpha-MoO3, refracted polaritons exhibit non-intuitive directions of propagation, enabling us to unveil an exotic optical effect: bending-free refraction. Furthermore, we succeed in developing the first in-plane refractive hyperlens, which yields foci as small as lamdap/6, being lamdap the polariton wavelength (lamda0/50 with respect to the wavelength of light in free space). Our results set the grounds for planar nano-optics in strongly anisotropic media, with potential for unprecedented control of the flow of energy at the nanoscale. △ Less

Submitted 19 March, 2021; originally announced March 2021.

Automatic virtual voltage extraction of a 2x2 array of quantum dots with machine learning

Authors: Giovanni A. Oakes, Jingyu Duan, John J. L. Morton, Alpha Lee, Charles G. Smith, M. Fernando Gonzalez Zalba

Abstract: Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independe… ▽ More Spin qubits in quantum dots are a compelling platform for fault-tolerant quantum computing due to the potential to fabricate dense two-dimensional arrays with nearest neighbour couplings, a requirement to implement the surface code. However, due to the proximity of the surface gate electrodes, cross-coupling capacitances can be substantial, making it difficult to control each quantum dot independently. Increasing the number of quantum dots increases the complexity of the calibration process, which becomes impractical to do heuristically. Inspired by recent demonstrations of industrial-grade silicon quantum dot bilinear arrays, we develop a theoretical framework to mitigate the effect of cross-capacitances in 2x2 arrays of quantum dots and extend it to 2xN and NxN arrays. The method is based on extracting the gradients in gate-voltage space of different charge transitions in multiple two-dimensional charge stability diagrams to determine the system's virtual gates. To automate the process, we train an ensemble of regression models to extract the gradients from a Hough transformation of charge stability diagrams and validate the algorithm on simulated and experimental data of a 2x2 quantum dot array. Our method provides a completely automated tool to mitigate cross-capacitance effects in arrays of QDs which could be utilised to study variability in device electrostatics across large arrays. △ Less

Submitted 22 November, 2024; v1 submitted 7 December, 2020; originally announced December 2020.

Comments: 14 pages, 13 figures

Dispersive readout of reconfigurable ambipolar quantum dots in a silicon-on-insulator nanowire

Authors: Jingyu Duan, Janne S. Lehtinen, Michael A. Fogarty, Simon Schaal, Michelle Lam, Alberto Ronzani, Andrey Shchepetov, Panu Koppinen, Mika Prunnila, Fernando Gonzalez-Zalba, John J. L. Morton

Abstract: We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to dem… ▽ More We report on ambipolar gate-defined quantum dots in silicon on insulator (SOI) nanowires fabricated using a customised complementary metal-oxide-semiconductor (CMOS) process. The ambipolarity was achieved by extending a gate over an intrinsic silicon channel to both highly doped n-type and p-type terminals. We utilise the ability to supply ambipolar carrier reservoirs to the silicon channel to demonstrate an ability to reconfigurably define, with the same electrodes, double quantum dots with either holes or electrons. We use gate-based reflectometry to sense the inter-dot charge transition(IDT) of both electron and hole double quantum dots, achieving a minimum integration time of 160(100) $μ$s for electrons (holes). Our results present the opportunity to combine, in a single device, the long coherence times of electron spins with the electrically controllable holes spins in silicon. △ Less

Submitted 29 September, 2020; originally announced September 2020.

Comments: 5 pages, 4 figures

Ultralong carrier lifetime of topological edge states in a-Bi4Br4

Authors: Pengcheng Mao, Junfeng Han, Jingchuan Zheng, Jinjian Zhou, Zhiming Yu, Wende Xiao, Dongyun Chen, Gang Wang, Jie Ma, Cheng-cheng Liu, Xiang Li, Qinsheng Wang, Junxi Duan, Hailong Chen, Yuxiang Weng, Yugui Yao

Abstract: The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observa… ▽ More The rising of quantum spin Hall insulators (QSHI) in two-dimensional (2D) systems has been attracting significant interest in current research, for which the 1D helical edge states, a hallmark of QSHI, are widely expected to be a promising platform for next-generation optoelectronics. However, the dynamics of the 1D edge states has not yet been experimentally addressed. Here, we report the observation of optical response of the topological helical edge states in a-Bi4Br4, using the infrared-pump infrared-probe microscopic spectroscopy. Remarkably, we observe that the carrier lifetime of the helical edge states reaches nanosecond-scale at room temperature, which is about 2 - 3 orders longer than that of most 2D topological surface states and is even comparable with that of the well developed optoelectronics semiconductors used in modern industry. The ultralong carrier lifetime of the topological edge states may be attributed to their helical and 1D nature. Our findings not only provide an ideal material for further investigations of the carrier dynamics of 1D helical edge states but also pave the way for its application in optoelectronics. △ Less

Submitted 1 July, 2020; originally announced July 2020.

Comments: 18 pages, 4 figures, 57 references

Observation of the Topologically Originated Edge States in large-gap Quasi-One-Dimensional a-Bi$_4$Br$_4$

Authors: Pengcheng Mao, Maoyuan Wang, Dashuai Ma, Dongyun Chen, Cheng-cheng Liu, Xiang Li, Jingchuan Zheng, Yongkai Li, Huixia Yang, Qinsheng Wang, Junxi Duan, Jie Ma, Yuanchang Li, Hailong Chen, Zhi Xu, Shuang Jia, Junfeng Han, Wende Xiao, Yugui Yao

Abstract: Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and only limited to few techniques to date. Here, by using infrared absorption spectroscopy, we observed robust topologically originated edge states in a-Bi4Br4 belts… ▽ More Two-dimensional topological insulator features time-reversal-invariant spin-momentum-locked one-dimensional (1D) edge states with a linear energy dispersion. However, experimental access to 1D edge states is still of great challenge and only limited to few techniques to date. Here, by using infrared absorption spectroscopy, we observed robust topologically originated edge states in a-Bi4Br4 belts with definitive signature of strong infrared absorption at belt sides and distinct anisotropy with respect to light polarizations, which is further supported by first-principles calculations. Our work demonstrates for the first time that the infrared spectroscopy can offer a power-efficient approach in experimentally probing 1D edge states of topological materials. △ Less

Submitted 1 July, 2020; originally announced July 2020.

Comments: 15 pages, 5 figures, 29 references

Giant optical anisotropy in transition metal dichalcogenides for next-generation photonics

Authors: G. A. Ermolaev, D. V. Grudinin, Y. V. Stebunov, K. V. Voronin, V. G. Kravets, J. Duan, A. B. Mazitov, G. I. Tselikov, A. Bylinkin, D. I. Yakubovsky, S. M. Novikov, D. G. Baranov, A. Y. Nikitin, I. A. Kruglov, T. Shegai, P. Alonso-González, A. N. Grigorenko, A. V. Arsenin, K. S. Novoselov, V. S. Volkov

Abstract: Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspir… ▽ More Large optical anisotropy observed in a broad spectral range is of paramount importance for efficient light manipulation in countless devices. Although a giant anisotropy was recently observed in the mid-infrared wavelength range, for visible and near-infrared spectral intervals, the problem remains acute with the highest reported birefringence values of 0.8 in BaTiS3 and h-BN crystals. This inspired an intensive search for giant optical anisotropy among natural and artificial materials. Here, we demonstrate that layered transition metal dichalcogenides (TMDCs) provide an answer to this quest owing to their fundamental differences between intralayer strong covalent bonding and weak interlayer van der Walls interaction. To do this, we carried out a correlative far- and near-field characterization validated by first-principle calculations that reveals an unprecedented birefringence of 1.5 in the infrared and 3 in the visible light for MoS2. Our findings demonstrate that this outstanding anisotropy allows for tackling the diffraction limit enabling an avenue for on-chip next-generation photonics. △ Less

Submitted 11 January, 2021; v1 submitted 1 June, 2020; originally announced June 2020.

Comments: 20 pages, 5 figures

Remote capacitive sensing in two-dimension quantum-dot arrays

Authors: Jingyu Duan, Michael A. Fogarty, James Williams, Louis Hutin, Maud Vinet, John J. L. Morton

Abstract: We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots w… ▽ More We investigate gate-defined quantum dots in silicon on insulator nanowire field-effect transistors fabricated using a foundry-compatible fully-depleted silicon-on-insulator (FD-SOI) process. A series of split gates wrapped over the silicon nanowire naturally produces a $2\times n$ bilinear array of quantum dots along a single nanowire. We begin by studying the capacitive coupling of quantum dots within such a 2$\times$2 array, and then show how such couplings can be extended across two parallel silicon nanowires coupled together by shared, electrically isolated, 'floating' electrodes. With one quantum dot operating as a single-electron-box sensor, the floating gate serves to enhance the charge sensitivity range, enabling it to detect charge state transitions in a separate silicon nanowire. By comparing measurements from multiple devices we illustrate the impact of the floating gate by quantifying both the charge sensitivity decay as a function of dot-sensor separation and configuration within the dual-nanowire structure. △ Less

Submitted 9 September, 2020; v1 submitted 29 May, 2020; originally announced May 2020.

Comments: 9 pages, 3 figures, 35 cites and supplementary

Twisted Nano-optics: Manipulating Light at the Nanoscale with Twisted Phonon Polaritonic Slabs

Authors: Jiahua Duan, Nathaniel Capote-Robayna, Javier Taboada-Gutierrez, Gonzalo Alvarez-Perez, Ivan Prieto, Javier Martin-Sanchez, Alexey Y. Nikitin, Pablo Alonso-Gonzalez

Abstract: Recent discoveries have shown that when two layers of van der Waals (vdW) materials are superimposed with a relative twist angle between their respective in-plane principal axes, the electronic properties of the coupled system can be dramatically altered. Here, we demonstrate that a similar concept can be extended to the optics realm, particularly to propagating polaritons, hybrid light-matter int… ▽ More Recent discoveries have shown that when two layers of van der Waals (vdW) materials are superimposed with a relative twist angle between their respective in-plane principal axes, the electronic properties of the coupled system can be dramatically altered. Here, we demonstrate that a similar concept can be extended to the optics realm, particularly to propagating polaritons, hybrid light-matter interactions. To do this, we fabricate stacks composed of two twisted slabs of a polar vdW crystal (MoO3) supporting low-loss anisotropic phonon polaritons (PhPs), and image the propagation of the latter when launched by localized sources (metal antennas). Our images reveal that under a critical angle the PhPs isofrequency curve (determining the PhPs momentum at a fixed frequency) undergoes a topological transition. Remarkably, at this angle, the propagation of PhPs is strongly guided along predetermined directions (canalization regime) with no geometrical spreading (diffraction-less). These results demonstrate a new degree of freedom (twist angle) for controlling the propagation of polaritons at the nanoscale with potential for nano-imaging, (bio)-sensing, quantum applications and heat management. △ Less

Submitted 7 July, 2020; v1 submitted 30 April, 2020; originally announced April 2020.

Creating and manipulating interfacial spin with giant magnetic response in 4$f$ antiferromagnets

Authors: Ruyi Zhang, Yujuan Pei, Yang Song, Jiachang Bi, Jingkai Yang, Junxi Duan, Yanwei Cao

Abstract: Creating and manipulating spin polarization in low-dimensional electron systems (such as two-dimensional electron gases) is fundamentally essential for spintronic applications, which is yet a challenge to date. In this work, we establish the metamagnetic phase diagram of 4$f$ antiferromagnetic TbScO$_3$ and reveal its giant magnetic response to sub-tesla magnetic field, which has not been reported… ▽ More Creating and manipulating spin polarization in low-dimensional electron systems (such as two-dimensional electron gases) is fundamentally essential for spintronic applications, which is yet a challenge to date. In this work, we establish the metamagnetic phase diagram of 4$f$ antiferromagnetic TbScO$_3$ and reveal its giant magnetic response to sub-tesla magnetic field, which has not been reported thus far. Utilizing this giant magnetic response, we demonstrate that the spin polarization of two-dimensional electron gas in SrTiO$_3$/LaTiO$_3$/TbScO$_3$ heterostructure can be manipulated successfully in aid of interfacial 3\textit{d}-4\textit{f} exchange interaction. Remarkably, the hysteretic magnetoresistances of two-dimensional electron gas at the SrTiO$_3$/LaTiO$_3$ interface are entirely determined by the metamagnetic phase transitions of the underlying TbScO$_3$ substrate. Our results pave a novel route to engineer the spin polarization of low-dimensional electron systems in 4$f$ antiferromagnet-based heterostructures. △ Less

Submitted 18 January, 2020; originally announced January 2020.

Comments: 5 pages, 4 figures

Infrared permittivity of the biaxial van der Waals semiconductor $α$-MoO$_3$ from near- and far-field correlative studies

Authors: Gonzalo Álvarez-Pérez, Thomas G. Folland, Ion Errea, Javier Taboada-Gutiérrez, Jiahua Duan, Javier Martín-Sánchez, Ana I. F. Tresguerres-Mata, Joseph R. Matson, Andrei Bylinkin, Mingze He, Weiliang Ma, Qiaoliang Bao, José Ignacio Martín, Joshua D. Caldwell, Alexey Y. Nikitin, Pablo Alonso-González

Abstract: The biaxial van der Waals semiconductor $α$-phase molybdenum trioxide ($α$-MoO$_3$) has recently received significant attention due to its ability to support highly anisotropic phonon polaritons (PhPs) -infrared (IR) light coupled to lattice vibrations in polar materials-, offering an unprecedented platform for controlling the flow of energy at the nanoscale. However, to fully exploit the extraord… ▽ More The biaxial van der Waals semiconductor $α$-phase molybdenum trioxide ($α$-MoO$_3$) has recently received significant attention due to its ability to support highly anisotropic phonon polaritons (PhPs) -infrared (IR) light coupled to lattice vibrations in polar materials-, offering an unprecedented platform for controlling the flow of energy at the nanoscale. However, to fully exploit the extraordinary IR response of this material, an accurate dielectric function is required. Here, we report the accurate IR dielectric function of $α$-MoO$_3$ by modelling far-field, polarized IR reflectance spectra acquired on a single thick flake of this material. Unique to our work, the far-field model is refined by contrasting the experimental dispersion and damping of PhPs, revealed by polariton interferometry using scattering-type scanning near-field optical microscopy (s-SNOM) on thin flakes of $α$-MoO$_3$, with analytical and transfer-matrix calculations, as well as full-wave simulations. Through these correlative efforts, exceptional quantitative agreement is attained to both far- and near-field properties for multiple flakes, thus providing strong verification of the accuracy of our model, while offering a novel approach to extracting dielectric functions of nanomaterials, usually too small or inhomogeneous for establishing accurate models only from standard far-field methods. In addition, by employing density functional theory (DFT), we provide insights into the various vibrational states dictating our dielectric function model and the intriguing optical properties of $α$-MoO$_3$. △ Less

Submitted 4 June, 2020; v1 submitted 12 December, 2019; originally announced December 2019.

Journal ref: Advanced Materials, 32, 1908176 (2020)

Robust edge photocurrent response on layered Type II Weyl semimetal WTe2

Authors: Qinsheng Wang, Jingchuan Zheng, Yuan He, Jin Cao, Xin Liu, Maoyuan Wang, Junchao Ma, Jiawei Lai, Hong Lu, Shuang Jia, Dayu Yan, Y. -G. Shi, Junxi Duan, Junfeng Han, Wende Xiao, Jian-Hao Chen, Kai Sun, Yugui Yao, Dong Sun

Abstract: Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivial materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harve… ▽ More Photo sensing and energy harvesting based on exotic properties of quantum materials and new operation principles have great potentials to break the fundamental performance limit of conventional photodetectors and solar cells. As topological nontrivial materials, Weyl semimetals have demonstrated novel optoelectronic properties that promise potential applications in photo detection and energy harvesting arising from their gapless linear dispersion near Weyl nodes and Berry field enhanced nonlinear optical effect at the vicinity of Weyl nodes. In this work, we demonstrate robust photocurrent generation from charge separation of photoexctied electron-hole pairs at the edge of Td-WTe2, a type-II Weyl semimetal, due to crystalline-symmetry breaking along certain crystal fracture directions and possibly enhanced by robust fermi-arc type surface states. Using scanning photocurrent microscopy (SPCM) measurements, we further demonstrate that the edge current response is robust over a wide excitation photon energy. We find that this robust feature is highly generic, and shall arise universally in a wide class of quantum materials with similar crystal symmetries. In addition, possible connections between these edge photocurrents and topological properties of Weyl semimetals are explored. The robust and generic edge current response demonstrated in this work provides a new type of charge separation mechanism for photosensing and energy harvesting over broad wavelength range. △ Less

Submitted 10 October, 2019; originally announced October 2019.

Journal ref: Nat Commun 10, 5736 (2019)

The maximum likelihood climate change for global warming under the influence of greenhouse effect and Lévy noise

Authors: Yayun Zheng, Fang Yang, Jinqiao Duan, Xu Sun, Ling Fu, Jürgen Kurths

Abstract: An abrupt climatic transition could be triggered by a single extreme event, an $α$-stable non-Gaussian Lévy noise is regarded as a type of noise to generate such extreme events. In contrast with the classic Gaussian noise, a comprehensive approach of the most probable transition path for systems under $α$-stable Lévy noise is still lacking. We develop here a probabilistic framework, based on the n… ▽ More An abrupt climatic transition could be triggered by a single extreme event, an $α$-stable non-Gaussian Lévy noise is regarded as a type of noise to generate such extreme events. In contrast with the classic Gaussian noise, a comprehensive approach of the most probable transition path for systems under $α$-stable Lévy noise is still lacking. We develop here a probabilistic framework, based on the nonlocal Fokker-Planck equation, to investigate the maximum likelihood climate change for an energy balance system under the influence of greenhouse effect and Lévy fluctuations. We find that a period of the cold climate state can be interrupted by a sharp shift to the warmer one due to larger noise jumps, and the climate change for warming $1.5\rm ^oC$ under an enhanced greenhouse effect generates a step-like growth process. These results provide important insights into the underlying mechanisms of abrupt climate transitions triggered by a Lévy process. △ Less

Submitted 6 September, 2019; originally announced September 2019.

Superconducting properties in a candidate topological nodal line semimetal SnTaS$_2$ with a centrosymmetric crystal structure

Authors: Dong-Yun Chen, Yuelong Wu, Lei Jin, Yongkai Li, Xiaoxiong Wang, JunXi Duan, Junfeng Han, Xiang Li, Yun-Ze Long, Xiaoming Zhang, Dong Chen, Bing Teng

Abstract: We report the magnetization, electrical resistivity, specific heat measurements and band structure calculations of layered superconductor SnTaS$_2$. The experiments are performed on single crystals grown by chemical vapor transport method. The resistivity and magnetic susceptibility indicate that SnTaS$_2$ is a type-II superconductor with transition temperature $T_c = 3$ K. The upper critical fiel… ▽ More We report the magnetization, electrical resistivity, specific heat measurements and band structure calculations of layered superconductor SnTaS$_2$. The experiments are performed on single crystals grown by chemical vapor transport method. The resistivity and magnetic susceptibility indicate that SnTaS$_2$ is a type-II superconductor with transition temperature $T_c = 3$ K. The upper critical field ($H_{c2}$) shows large anisotropy for magnetic field parallel to $ab$ plane ($H//ab$) and $c$ axis ($H//c$), and the temperature dependence of $H_{c2}$ for $H//ab$ shows obvious unconventional upward feature at low temperature. Band structure of SnTaS$_2$ shows several band crossings near the Fermi level, which form three nodal lines in the k$_z$ = 0 plane resulting in drumhead-like surface states when spin-orbit coupling is not considered. These results indicate that SnTaS$_2$ is a superconductor with possible topological nodal line semimetal character. △ Less

Submitted 24 August, 2019; v1 submitted 4 May, 2019; originally announced May 2019.

Journal ref: Phys. Rev. B 100, 064516 (2019)

Tuning the metal-insulator transition in epitaxial SrVO3 films by uniaxial strain

Authors: Changan Wang, Hongbin Zhang, Kumar Deepak, 5Chao Chen, Arnaud Fouchet, Juanmei Duan, Donovan Hilliard, Ulrich Kentsch, Deyang Chen, Min Zeng, Xingsen Gao, Yu-Jia Zeng, Manfred Helm, Wilfrid Prellier, Shengqiang Zhou

Abstract: Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice… ▽ More Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial SrVO3 (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean field theory (DFT+DMFT) calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of out-of-plane lattice constant. These findings provide new insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons. △ Less

Submitted 14 April, 2019; originally announced April 2019.

Comments: 17 pages, 4 figures,submitted to Phys. Rev. Materials

Journal ref: Phys. Rev. Materials 3, 115001 (2019)

Mean escape time for randomly switching narrow gates in a cellular flow

Authors: Hui Wang, Jinqiao Duan, Xianguo Geng, Ying Chao

Abstract: The escape of particles through a narrow absorbing gate in confined domains is a abundant phenomenon in various systems in physics, chemistry and molecular biophysics. We consider the narrow escape problem in a cellular flow when the two gates randomly switch between different states with a switching rate k between the two gates. After briefly deriving the coupled partial differential equations fo… ▽ More The escape of particles through a narrow absorbing gate in confined domains is a abundant phenomenon in various systems in physics, chemistry and molecular biophysics. We consider the narrow escape problem in a cellular flow when the two gates randomly switch between different states with a switching rate k between the two gates. After briefly deriving the coupled partial differential equations for the escape time through two gates, we compute the mean escape time for particles escaping from the gates with different initial states. By numerical simulation under nonuniform boundary conditions, we quantify how narrow escape time is affected by the switching rate k between the two gates, arc length s between two gates, angular velocity w of the cellular flow and diffusion coefficient D. We reveal that the mean escape time decreases with the switching rate k between the two gates, angular velocity w and diffusion coefficient D for fixed arc length, but takes the minimum when the two gates are evenly separated on the boundary for any given switching rate k between the two gates. In particular, we find that when the arc length size ε for the gates is sufficiently small, the average narrow escape time is approximately independent of the gate arc length size. We further indicate combinations of system parameters (regions located in the parameter space) such that the mean escape time is the longest or shortest. Our findings provide mathematical understanding for phenomena such as how ions select ion channels and how chemicals leak in annulus ring containers, when drift vector fields are present. △ Less

Submitted 30 November, 2018; originally announced December 2018.

Comments: 12 pages, 17 figures

Target Search of a Protein on DNA in the Presence of Position-dependent Bias

Authors: Xi Chen, Xiujun Cheng, Yanmei Kang, Jinqiao Duan

Abstract: We study the target searching on the DNA for proteins in the presence of non-constant drift and non-Gaussian $α$-stable Lévy fluctuations. The target searching is realized by the facilitated diffusion process. The existing works are about this problem in the case of constant drift. Starting from a non-local Fokker-Planck equation with a "sink" term, we obtain the possibility density function for t… ▽ More We study the target searching on the DNA for proteins in the presence of non-constant drift and non-Gaussian $α$-stable Lévy fluctuations. The target searching is realized by the facilitated diffusion process. The existing works are about this problem in the case of constant drift. Starting from a non-local Fokker-Planck equation with a "sink" term, we obtain the possibility density function for the protein occurring at position $x$ on time $t$. Based on this, we further compute the survival probability and the first arrival density in order to quantify the searching mechanisms. The numerical results show that in the linear drift case, there is an optimal $α$ index for the search to be most likely successful (searching reliability reaches its maximum). This optimal $α$ index depends on initial position-target separation. It is also found that the diffusion intensity plays a positive role in improving the searching success. The nonlinear double-well drift could drive the protein to reach the target with a larger possibility than the linear drag at initial time period, but viewing at the long time evolution, the linear drift is more beneficial for target searching success. In contrast to the linear drift case, the search reliability and efficiency with nonlinear drift have a monotonic relationship with the $α$ index, that is, the smaller the $α$ index is, the more possibly a protein finds its target. △ Less

Submitted 29 September, 2018; originally announced October 2018.