Showing 1–20 of 20 results for author: Du, R R

Enhancement of the $ν= 5/2$ Fractional Quantum Hall State in a Small In-Plane Magnetic Field

Authors: Guangtong Liu, Chi Zhang, D. C. Tsui, Ivan Knez, Aaron Levine, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $ν= 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt ang… ▽ More Using a 50-nm width, ultra-clean GaAs/AlGaAs quantum well, we have studied the Landau level filling factor $ν= 5/2$ fractional quantum Hall effect in a perpendicular magnetic field $B \sim$ 1.7 T and determined its dependence on tilted magnetic fields. Contrary to all previous results, the 5/2 resistance minimum and the Hall plateau are found to strengthen continuously under an increasing tilt angle $0 < θ< 25^\circ$ (corresponding to an in-plane magnetic field 0 $<$ $B_\parallel$ $< 0.8$ T). In the same range of $θ$ the activation gaps of both the 7/3 and the 8/3 states are found to increase with tilt. The 5/2 state transforms into a compressible Fermi liquid upon tilt angle $θ> 60^\circ$, and the composite fermion series [2+$p/(2p\pm1)$], $p =$ 1, 2 can be identified. Based on our results, we discuss the relevance of a Skyrmion spin texture at $ν= 5/2$ associated with small Zeeman energy in wide quantum wells, as proposed by W$\acute{\text o}$js $et$ $al$., Phys. Rev. Lett. 104, 086801 (2010). △ Less

Submitted 28 March, 2012; originally announced March 2012.

Comments: 5+ pages, 3 figures, accepted for by Phy. Rev. Lett

Observation of a cyclotron harmonic spike in microwave-induced resistances in ultraclean GaAs/AlGaAs quantum wells

Authors: Yanhua Dai, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude > 300% of the MIRO, and a typical FWHM ~50 mK, comparable with the Landau… ▽ More We report the observation of a colossal, narrow resistance peak that arises in ultraclean (mobility 3X10^7cm^2/Vs) GaAs/AlGaAs quantum wells (QWs) under millimeterwave irradiation and a weak magnetic field. Such a spike is superposed on the 2nd harmonic microwave-induced resistance oscillations (MIRO) but having an amplitude > 300% of the MIRO, and a typical FWHM ~50 mK, comparable with the Landau level width. Systematic studies show a correlation between the spike and a pronounced negative magnetoresistance in these QWs, suggesting a mechanism based on the interplay of strong scatterers and smooth disorder. Alternatively, the spike may be interpreted as a manifestation of quantum interference between the quadrupole resonance and the higher-order cyclotron transition in well-separated Landau levels. △ Less

Submitted 26 October, 2010; originally announced October 2010.

Comments: 4pages, 4figures

Finite Conductivity in Mesoscopic Hall Bars of Inverted InAs/GaSb Quantum Wells

Authors: Ivan Knez, R. R. Du, Gerard Sullivan

Abstract: We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the electron-hole hybridization state, and observe a mini gap. Temperature dependence of the conductivity in the gap shows residual conductivity, which can be consistently e… ▽ More We have studied experimentally the low temperature conductivity of mesoscopic size InAs/GaSb quantum well Hall bar devices in the inverted regime. Using a pair of electrostatic gates we were able to move the Fermi level into the electron-hole hybridization state, and observe a mini gap. Temperature dependence of the conductivity in the gap shows residual conductivity, which can be consistently explained by the contributions from the free as well as the hybridized carriers in the presence of impurity scattering, as proposed by Naveh and Laikhtman [Euro. Phys. Lett., 55, 545-551 (2001)]. Experimental implications for the stability of proposed helical edge states will be discussed. △ Less

Submitted 1 February, 2010; originally announced February 2010.

Comments: 5 pages, 4 figures

Resistance Fluctuations in Composite Fermion State near Landau Level Filling Factor $ν= 1/2$ in A Square Quantum Well

Authors: Jian Zhang, R. R. Du, J. A. Simmons, J. L. Reno

Abstract: We have studied the magnetotransport near Landau level filling factor $ν= 1/2$ in a GaAs-Al0.3Ga0.7As square quantum well (width 35 nm) in magnetic field up to 42 T and in a temperature range between 50 mK and 1.5 K. In low temperatures T < 200 mK, the Rxx exhibits a deep, strongly temperature-dependent minimum centered at $ν= 1/2$. The concomitant Rxy is not strictly linear with magnetic field… ▽ More We have studied the magnetotransport near Landau level filling factor $ν= 1/2$ in a GaAs-Al0.3Ga0.7As square quantum well (width 35 nm) in magnetic field up to 42 T and in a temperature range between 50 mK and 1.5 K. In low temperatures T < 200 mK, the Rxx exhibits a deep, strongly temperature-dependent minimum centered at $ν= 1/2$. The concomitant Rxy is not strictly linear with magnetic field (B) and the first derivative of Rxy with respect to B shows a sharp cusp at $ν= 1/2$, indicating a non-classical Hall effect. We verify these characteristics are being single-layer origin by applying an in-plane magnetic field or electrostatic gates. The data may signal frustrations in the composite fermion state towards $ν= 1/2$ pairing in the quantum well where the electron layer thickness far exceeds the magnetic length. △ Less

Submitted 29 August, 2008; originally announced August 2008.

Comments: 15 pages, 3 figures

Photovoltaic Oscillations Due to Edge-Magnetoplasmon Modes in a Very-High Mobility 2D Electron Gas

Authors: K. Stone, C. L. Yang, Z. Q. Yuan, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the resp… ▽ More Using very-high mobility GaAs/AlGaAs 2D electron Hall bar samples, we have experimentally studied the photoresistance/photovoltaic oscillations induced by microwave irradiation in the regime where both 1/B and B-periodic oscillations can be observed. In the frequency range between 27 and 130 GHz we found that these two types of oscillations are decoupled from each other, consistent with the respective models that 1/B oscillations occur in bulk while the B-oscillations occur along the edges of the Hall bars. In contrast to the original report of this phenomenon (Ref. 1) the periodicity of the B-oscillations in our samples are found to be independent of L, the length of the Hall bar section between voltage measuring leads. △ Less

Submitted 12 November, 2007; v1 submitted 20 September, 2007; originally announced September 2007.

Comments: 4 pages, 4 figures

Journal ref: Phys. Rev. B 76, 153306 (2007)

Microwave photoresistance of a high-mobility two-dimensional electron gas in a triangular antidot lattice

Authors: Z. Q. Yuan, C. L. Yang, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing on sharp commensurate geometrical resonance (GR). Analysis shows that the MIRO, MP, and GR are decoupled from each other in thes… ▽ More The microwave (MW) photoresistance has been measured on a high-mobility two-dimensional electron gas patterned with a shallow triangular antidot lattice, where both the MW-induced resistance oscillations (MIRO) and magnetoplasmon (MP) resonance are observed superposing on sharp commensurate geometrical resonance (GR). Analysis shows that the MIRO, MP, and GR are decoupled from each other in these experiments. △ Less

Submitted 27 July, 2006; originally announced July 2006.

Comments: 5 pages, 4 figures, paper accepted by PRB

Bichromatic Microwave Photoresistance of Two-Dimensional Electron System

Authors: M. A. Zudov, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: We explore experimentally bichromatic (frequencies $ω_1$ and $ω_2$) photoresistance of a two-dimensional electron system in the regimes of microwave-induced resistance oscillations and zero-resistance states. We find bichromatic resistance to be well described by a superposition of $ω_1$ and $ω_2$ components, provided that both monochromatic resistances are positive. This relation holds even whe… ▽ More We explore experimentally bichromatic (frequencies $ω_1$ and $ω_2$) photoresistance of a two-dimensional electron system in the regimes of microwave-induced resistance oscillations and zero-resistance states. We find bichromatic resistance to be well described by a superposition of $ω_1$ and $ω_2$ components, provided that both monochromatic resistances are positive. This relation holds even when the oscillation amplitudes are small and one could expect additive contributions from monochromatic photoresistances. In contrast, whenever a zero-resistance state is formed by one of the frequencies, such superposition relation breaks down and the bichromatic resistance is strongly suppressed. △ Less

Submitted 19 May, 2006; originally announced May 2006.

Comments: To appear in Phys. Rev. Lett

Journal ref: Phys. Rev. Lett. 96, 236804 (2006)

Multiphoton processes in microwave photoresistance of 2D electron system

Authors: M. A. Zudov, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: We extend our studies of microwave photoresistance of ultra-high mobility two-dimensional electron system (2DES) into the high-intensity, non-linear regime employing both monochromatic and bichromatic radiation. Under high-intensity monochromatic radiation $ω$ we observe new zero-resistance states (ZRS) which correspond to rational values of $ε=ω/ω_C$ ($ω_C$ is the cyclotron frequency) and can b… ▽ More We extend our studies of microwave photoresistance of ultra-high mobility two-dimensional electron system (2DES) into the high-intensity, non-linear regime employing both monochromatic and bichromatic radiation. Under high-intensity monochromatic radiation $ω$ we observe new zero-resistance states (ZRS) which correspond to rational values of $ε=ω/ω_C$ ($ω_C$ is the cyclotron frequency) and can be associated with multiphoton processes. %Formation of these rational ZRS is accompanied by a dramatic reconstruction of the photoresistance spectrum which reveals diminishing, narrowing, and phase reduction of the resistance peaks, as well as overall suppression of resistance at $ε<1/2$. Under bichromatic radiation $ω_1,ω_2$ we discover new resistance minimum, possibly a precursor of bichromatic ZRS, which seems to originate from a frequency mixing process, $ω_1+ω_2$. These findings indicate that multiphoton processes play important roles in the physics of non-equilibrium transport of microwave-driven 2DES, and suggest new directions for theoretical and experimental studies. △ Less

Submitted 19 December, 2005; originally announced December 2005.

Comments: 4.5 pages, 3 figures

Journal ref: Phys. Rev. B 73, 041303(R) (2006)

Influence of a Parallel Magnetic Field on Microwave Photoconductivity in a High-Mobility 2D Electron System

Authors: C. L. Yang, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have observed a strong suppression of MIRO/ZRS by a modest $B_{//}\sim 0.5$ T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrent… ▽ More We have studied experimentally the influence of a parallel magnetic field ($B_{//}$) on microwave-induced resistance oscillations (MIRO) and zero-resistance states (ZRS) previously discovered in a high-mobility 2D electron system. We have observed a strong suppression of MIRO/ZRS by a modest $B_{//}\sim 0.5$ T. In Hall bar samples, magnetoplasmon resonance (MPR) has also been observed concurrently with the MIRO/ZRS. In contrast to the suppression of MIRO/ZRS, the MPR peak is found to be enhanced by $B_{//}$. These findings have not been addressed by current models proposed to explain the microwave-induced effects. △ Less

Submitted 27 April, 2005; originally announced April 2005.

Comments: RevTex4, 4 pages, 3 figures

Oscillatory and Vanishing Resistance States in Microwave Irradiated 2D Electron Systems

Authors: R. R. Du, M. A. Zudov, C. L. Yang, Z. Q. Yuan, L. N. Pfeiffer, K. W. West

Abstract: Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated wit… ▽ More Giant-amplitude oscillations in dc magnetoresistance of a high-mobility two-dimensional electron system can be induced by millimeterwave irradiations, leading to zero-resistance states at the oscillation minima. Following a brief overview of the now well-known phenomenon, this paper reports on aspects of more recent experiments on the subject. These are: new zero-resistance states associated with multi-photon processes; suppression of Shubnikov-de Haas oscillations by high-frequency microwaves; and microwave photoconductivity of a high-mobility two-dimensional hole system. △ Less

Submitted 20 October, 2004; v1 submitted 16 September, 2004; originally announced September 2004.

Comments: 10 pages and 7 figures, RevTex4;16th International Conference on High Magnetic Fields in Semiconductor Physics (SemiMag16), August 2-6, 2004, Tallahassee; To be published in International Journal of Modern Physics B; References added, typos corrected

Journal ref: Int. J. Mod. Phys. B 18, 3465 (2004)

Oscillatory Magneto-Thermopower and Resonant Phonon Drag in a High-Mobility 2D Electron Gas

Authors: Jian Zhang, S. K. Lyo, R. R. Du, J. A. Simmons, J. L. Reno

Abstract: Experimental and theoretical evidence is presented for new low-magnetic-field ($B<5$ kG) 1/B-oscillations in the thermoelectric power of a high-mobility GaAs/AlGaAs two-dimensional (2D) electron gas. The oscillations result from inter-Landau-Level resonances of acoustic phonons carrying a momentum equal to twice the Fermi wavenumber at $B = 0$. Numerical calculations show that both 3D and 2D pho… ▽ More Experimental and theoretical evidence is presented for new low-magnetic-field ($B<5$ kG) 1/B-oscillations in the thermoelectric power of a high-mobility GaAs/AlGaAs two-dimensional (2D) electron gas. The oscillations result from inter-Landau-Level resonances of acoustic phonons carrying a momentum equal to twice the Fermi wavenumber at $B = 0$. Numerical calculations show that both 3D and 2D phonons can contribute to this effect. △ Less

Submitted 10 October, 2003; originally announced October 2003.

Comments: 4 pages, 5 figures

Weak Localization in an Ultradense 2D Electron Gas in $δ$-doped Silicon

Authors: M. A. Zudov, C. L. Yang, R. R. Du, T. -C. Shen, J. -Y. Ji, J. S. Kline, J. R. Tucker

Abstract: An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first… ▽ More An ultradense 2D electron system can be realized by adsorbing PH$_3$ precursor molecules onto an atomically clean Si surface, followed by epitaxial Si overgrowth. By controlling the PH$_3$ coverage the carrier density of such system can easily reach $\sim 10^{14}$ cm$^{-2}$, exceeding that typically found in GaAs/AlGaAs structures by more than two-three orders of magnitude. We report on a first systematic characterization of such novel system by means of standard magnetotransport. The main findings include logarithmic temperature dependence of zero-field conductivity and logarithmic negative magnetoresistance. We analyzed the results in terms of scaling theory of localization in two dimensions. △ Less

Submitted 20 May, 2003; originally announced May 2003.

Observation of Apparently Zero-Conductance States in Corbino Samples

Authors: C. L. Yang, M. A. Zudov, T. A. Knuuttila, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: Using Corbino samples we have observed oscillatory conductance in a high-mobility two-dimensional electron system subjected to crossed microwave and magnetic fields. On the strongest of the oscillation minima the conductance is found to be vanishingly small, possibly indicating an insulating state associated with these minima. Using Corbino samples we have observed oscillatory conductance in a high-mobility two-dimensional electron system subjected to crossed microwave and magnetic fields. On the strongest of the oscillation minima the conductance is found to be vanishingly small, possibly indicating an insulating state associated with these minima. △ Less

Submitted 23 March, 2003; originally announced March 2003.

Comments: 4 pages, 3 figures, RevTex4

Journal ref: Phys. Rev. Lett. 91, 096803 (2003)

Evidence for a New Dissipationless Regime in 2D Electronic Transport

Authors: M. A. Zudov, R. R. Du, L. N. Pfeiffer, K. W. West

Abstract: In an ultra-clean 2D electron system (2DES) subjected to crossed millimeterwave (30--150 GHz) and weak (B < 2 kG) magnetic fields, a series of apparently dissipationless states emerges as the system is detuned from cyclotron resonances. Such states are characterized by an exponentially vanishing low-temperature longitudinal resistance and a classical Hall resistance. The activation energies asso… ▽ More In an ultra-clean 2D electron system (2DES) subjected to crossed millimeterwave (30--150 GHz) and weak (B < 2 kG) magnetic fields, a series of apparently dissipationless states emerges as the system is detuned from cyclotron resonances. Such states are characterized by an exponentially vanishing low-temperature longitudinal resistance and a classical Hall resistance. The activation energies associated with such states exceeds the Landau level spacing by an order of magnitude. Our findings are likely indicative of a collective ground state previously unknown for 2DES. △ Less

Submitted 1 October, 2002; originally announced October 2002.

Comments: 4 pages, 2 figures

Journal ref: Phys. Rev. Lett. 90, 46807 (2003)

Zener Tunneling Between Landau Orbits in a High-Mobility Two-Dimensional Electron Gas

Authors: C. L. Yang, J. Zhang, R. R. Du, J. A. Simmons, J. L. Reno

Abstract: Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magne… ▽ More Magnetotransport in a laterally confined two-dimensional electron gas (2DEG) can exhibit modified scattering channels owing to a tilted Hall potential. Transitions of electrons between Landau levels with shifted guiding centers can be accomplished through a Zener tunneling mechanism, and make a significant contribution to the magnetoresistance. A remarkable oscillation effect in weak field magnetoresistance has been observed in high-mobility 2DEGs in GaAs-AlGa$_{0.3}$As$_{0.7}$ heterostructures, and can be well explained by the Zener mechanism. △ Less

Submitted 21 August, 2002; v1 submitted 22 April, 2002; originally announced April 2002.

Comments: 5 pages, 4 figures. Text slightly shortened, figures resized

Journal ref: Phys. Rev. Lett. 89, 076801(2002)

A New Class of Magnetoresistance Oscillations: Interaction of a Two-Dimensional Electron Gas with Leaky Interface Phonons

Authors: M. A. Zudov, I. V. Ponomarev, A. L. Efros, R. R. Du, J. A. Simmons, J. L. Reno

Abstract: We report on a new class of magnetoresistance oscillations observed in a high-mobility two-dimensional electron gas (2DEG) in GaAs-Al$_x$Ga$_{1-x}$As heterostructures. Appearing in a weak magnetic field ($B<$ 0.3 T) and only in a narrow temperature range (2 K $<T<$ 9 K), these oscillations are periodic in 1/B with a frequency proportional to the electron Fermi wave vector, $k_F$. We interpret th… ▽ More We report on a new class of magnetoresistance oscillations observed in a high-mobility two-dimensional electron gas (2DEG) in GaAs-Al$_x$Ga$_{1-x}$As heterostructures. Appearing in a weak magnetic field ($B<$ 0.3 T) and only in a narrow temperature range (2 K $<T<$ 9 K), these oscillations are periodic in 1/B with a frequency proportional to the electron Fermi wave vector, $k_F$. We interpret the effect as a magnetophonon resonance of the 2DEG with leaky interface-acoustic phonon modes carrying a wave vector $q=2k_F$. Calculations show a few branches of such modes on the GaAs-Al$_x$Ga$_{1-x}$As interface, and their velocities are in quantitative agreement with the data. △ Less

Submitted 17 April, 2001; v1 submitted 1 May, 2000; originally announced May 2000.

Comments: 4 pages, RevTex4, 4 figures

Journal ref: Phys. Rev. Lett. 86, 3614 (2001)

Magnetization-controlled spin transport in DyAs/GaAs layers

Authors: J. M. Mao, M. E. Zudov, R. R. Du, P. P. Lee, L. P. Sadwick, R. J. Hw

Abstract: Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T which are believed to be related to the strong spin-disorder scattering occurring at the phase transition boundaries induced by external magnetic field. An e… ▽ More Electrical transport properties of DyAs epitaxial layers grown on GaAs have been investigated at various temperatures and magnetic fields up to 12T. The measured longitudinal resistances show two distinct peaks at fields around 0.2 and 2.5T which are believed to be related to the strong spin-disorder scattering occurring at the phase transition boundaries induced by external magnetic field. An empirical magnetic phase diagram is deduced from the temperature dependent experiment, and the anisotropic transport properties are also presented for various magnetic field directions with respect to the current flow. △ Less

Submitted 23 September, 1999; v1 submitted 23 September, 1999; originally announced September 1999.

Comments: 3 pages with 3 figures

Strongly Anisotropic Electronic Transport at Landau Level Filling Factor $ν= 9/2$ and $ν= 5/2$ Under Tilted Magnetic Field

Authors: W. Pan, R. R. Du, H. L. Stormer, D. C. Tsui, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Abstract: We have investigated the influence of an increasing in-plane magnetic field on the states at half-filling of Landau levels ($ν$ = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at $ν$ = 9/2 and 11/2 an in-plane magnetic field of $\sim$ 1-2 T overcomes its initial pinning to the crystal lattice and {\it reorient} this phase. In the initially i… ▽ More We have investigated the influence of an increasing in-plane magnetic field on the states at half-filling of Landau levels ($ν$ = 11/2, 9/2, 7/2, and 5/2) of a two-dimensional electron system. In the electrically anisotropic phase at $ν$ = 9/2 and 11/2 an in-plane magnetic field of $\sim$ 1-2 T overcomes its initial pinning to the crystal lattice and {\it reorient} this phase. In the initially isotropic phases at $ν$ = 5/2 and 7/2 an in-plane magnetic field {\it induces} a strong electrical anisotropy. In all cases, for high in-plane fields, the high resistance axis is parallel to the direction of the in-plane field. △ Less

Submitted 10 March, 1999; originally announced March 1999.

Comments: 6 page, 3 figues

Strongly Anisotropic Transport in Higher Two-Dimensional Landau Levels

Authors: R. R. Du, D. C. Tsui, H. L. Stormer, L. N. Pfeiffer, K. W. Baldwin, K. W. West

Abstract: Low-temperature, electronic transport in Landau levels N>1 of a two-dimensional electron system is strongly anisotropic. At half-filling of either spin level of each such Landau level the magnetoresistance either collapses to form a deep minimum or is peaked in a sharp maximum, depending on the in-plane current direction. Such anisotropies are absent in the N=0 and N=1 Landau level, which are do… ▽ More Low-temperature, electronic transport in Landau levels N>1 of a two-dimensional electron system is strongly anisotropic. At half-filling of either spin level of each such Landau level the magnetoresistance either collapses to form a deep minimum or is peaked in a sharp maximum, depending on the in-plane current direction. Such anisotropies are absent in the N=0 and N=1 Landau level, which are dominated by the states of the fractional quantum Hall effect. The transport anisotropies may be indicative of a new many particle state, which forms exclusively in higher Landau levels. △ Less

Submitted 1 December, 1998; originally announced December 1998.

Comments: 12 pages, 3 Postscript figures

Microwave Photoresistance Measurements of Magneto-excitations near a 2D Fermi Surface

Authors: M. A. Zudov, R. R. Du, J. A. Simmons, J. L. Reno

Abstract: We report the detection of the cyclotron(CR) and magneto-plasmon(MPR) resonances near the Fermi surface of high-mobility 2DES, by microwave photoresistance measurements. We observe large amplitude photoresistance oscillations originating from higher-order CR, transitions between non-adjacent Landau levels. Such transitions are drastically enhanced in low magnetic field as compared to those previ… ▽ More We report the detection of the cyclotron(CR) and magneto-plasmon(MPR) resonances near the Fermi surface of high-mobility 2DES, by microwave photoresistance measurements. We observe large amplitude photoresistance oscillations originating from higher-order CR, transitions between non-adjacent Landau levels. Such transitions are drastically enhanced in low magnetic field as compared to those previously known in the high field limit. The scattering time of the CR is found to be nearly one order of magnitude higher than that of Shubnikov-de-Haas oscillations. Finally, distinct photoresistance peaks are observed in addition to the CR features. These are identified as resonances of the low-frequency MP modes at a cut-off wavelength determined by the width of the 2DES sample. △ Less

Submitted 15 November, 1997; originally announced November 1997.

Comments: 10 pages(RevTex), 4 figures(PS)