-
Extreme sub-wavelength magneto-elastic electromagnetic antenna implemented with multiferroic nanomagnets
Authors:
J. L. Drobitch,
A. De,
K. Dutta,
P. K. Pal,
A. Adhikari,
A. Barman,
S. Bandyopadhyay
Abstract:
Antennas typically have emission/radiation efficiencies bounded by A/(lambda)^2 (A < lambda^2) where A is the emitting area and lambda is the wavelength of the emitted wavelength. That makes it challenging to miniaturize antennas to extreme sub-wavelength dimensions. One way to overcome this challenge is to actuate an antenna not at the resonance of the emitted wave, but at the resonance of a diff…
▽ More
Antennas typically have emission/radiation efficiencies bounded by A/(lambda)^2 (A < lambda^2) where A is the emitting area and lambda is the wavelength of the emitted wavelength. That makes it challenging to miniaturize antennas to extreme sub-wavelength dimensions. One way to overcome this challenge is to actuate an antenna not at the resonance of the emitted wave, but at the resonance of a different excitation that has a much shorter wavelength at the same frequency. We have actuated an electromagnetic (EM) antenna with a surface acoustic wave (SAW) whose wavelength is about five orders of magnitude smaller than the EM wavelength at the same frequency. This allowed us to implement an extreme sub-wavelength EM antenna, radiating an EM wave of wavelength lambda = 2 m, whose emitting area is ~10^-8 m2 (A/lambda^2 = 2.5 10^-9), and whose measured radiation efficiency exceeded the A/(lambda)^2 limit by over 10^5. The antenna consisted of magnetostrictive nanomagnets deposited on a piezoelectric substrate. A SAW launched in the substrate with an alternating electrical voltage periodically strained the nanomagnets and rotated their magnetizations owing to the Villari effect. The oscillating magnetizations emitted EM waves at the frequency of the SAW. These extreme sub-wavelength antennas, that radiate with efficiencies a few orders of magnitude larger than the A/(lambda)^2 limit, allow drastic miniaturization of communication systems.
△ Less
Submitted 9 June, 2020;
originally announced June 2020.
-
Robustness and scalability of p-bits implemented with low energy barrier nanomagnets
Authors:
Justine L. Drobitch,
Supriyo Bandyopadhyay
Abstract:
Probabilistic (p-) bits implemented with low energy barrier nanomagnets (LBMs) have recently gained attention because they can be leveraged to perform some computational tasks very efficiently. Although more error-resilient than Boolean computing, p-bit based computing employing LBMs is, however, not completely immune to defects and device-to-device variations. In some tasks (e.g. binary stochasti…
▽ More
Probabilistic (p-) bits implemented with low energy barrier nanomagnets (LBMs) have recently gained attention because they can be leveraged to perform some computational tasks very efficiently. Although more error-resilient than Boolean computing, p-bit based computing employing LBMs is, however, not completely immune to defects and device-to-device variations. In some tasks (e.g. binary stochastic neurons for machine learning and p-bits for population coding), extended defects, such as variation of the LBM thickness over a significant fraction of the surface, can impair functionality. In this paper, we have examined if unavoidable geometric device-to-device variations can have a significant effect on one of the most critical requirements for probabilistic computing, namely the ability to "program" probability with an external agent, such as a spin-polarized current injected into the LBM. We found that the programming ability is fortunately not lost due to reasonable device-to-device variations. The little variation in the probability versus current characteristic that reasonable device variability causes can be suppressed further by increasing the spin polarization of the current. This shows that probabilistic computing with LBMs is robust against small geometric variations, and hence will be "scalable" to a large number of p-bits.
△ Less
Submitted 20 November, 2019; v1 submitted 10 October, 2019;
originally announced October 2019.
-
A Microwave Oscillator Based on a Single Straintronic Magneto-tunneling Junction
Authors:
Md Ahsanul Abeed,
Justine L. Drobitch,
Supriyo Bandyopadhyay
Abstract:
There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with electrically generated mechanical strain leading to electrical control of magnetism. Straintronic magneto-tunneling junctions (s-MTJ) belong to this category. Their soft l…
▽ More
There is growing interest in exploring nanomagnetic devices as potential replacements for electronic devices (e.g. transistors) in digital switching circuits and systems. A special class of nanomagnetic devices are switched with electrically generated mechanical strain leading to electrical control of magnetism. Straintronic magneto-tunneling junctions (s-MTJ) belong to this category. Their soft layers are composed of two-phase multiferroics comprising a magnetostrictive layer elastically coupled to a piezoelectric layer. Here, we show that a single straintronic magneto-tunneling junction with a passive resistor can act as a microwave oscillator whose traditional implementation would have required microwave operational amplifiers, capacitors and resistors. This reduces device footprint and cost, while improving device reliability. This is an analog application of magnetic devices where magnetic interactions (interaction between the shape anisotropy, strain anisotropy, dipolar coupling field and spin transfer torque in the soft layer of the s-MTJ) are exploited to implement an oscillator with reduced footprint.
△ Less
Submitted 17 July, 2019; v1 submitted 8 February, 2019;
originally announced February 2019.
-
Hybrid straintronics and voltage-controlled-magnetic-anisotropy: Precessional switching of a perpendicular anisotropy magneto-tunneling junction without a magnetic field
Authors:
Justine L. Drobitch,
Md Ahsanul Abeed,
Supriyo Bandyopadhyay
Abstract:
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stresse…
▽ More
We propose an all-electric implementation of a precessionally switched perpendicular magnetic anisotropy magneto-tunneling-junction (p-MTJ) based toggle memory cell where data is written with voltage-controlled-magnetic-anisotropy (VCMA) without requiring an in-plane magnetic field. The soft layer of the MTJ is a two-phase (magnetostrictive/piezoelectric) multiferroic which is electrically stressed to produce an effective in-plane magnetic field around which the magnetization precesses to complete a flip when the VCMA voltage pulse duration and the stress duration are independently adjusted to obtain a high switching probability. A two-terminal energy-efficient cell, that is compatible with crossbar architecture and high cell density, is designed.
△ Less
Submitted 27 March, 2017; v1 submitted 21 March, 2017;
originally announced March 2017.
