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Deep neural network for X-ray photoelectron spectroscopy data analysis
Authors:
Giovanni Drera,
Chahan M. Kropf,
Luigi Sangaletti
Abstract:
In this work, we characterize the performance of a deep convolutional neural network designed to detect and quantify chemical elements in experimental X-ray photoelectron spectroscopy data. Given the lack of a reliable database in literature, in order to train the neural network we computed a large ($>$100 k) dataset of synthetic spectra, based on randomly generated materials covered with a layer…
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In this work, we characterize the performance of a deep convolutional neural network designed to detect and quantify chemical elements in experimental X-ray photoelectron spectroscopy data. Given the lack of a reliable database in literature, in order to train the neural network we computed a large ($>$100 k) dataset of synthetic spectra, based on randomly generated materials covered with a layer of adventitious carbon. The trained net performs as good as standard methods on a test set of $\approx$ 500 well characterized experimental X-ray photoelectron spectra. Fine details about the net layout, the choice of the loss function and the quality assessment strategies are presented and discussed. Given the synthetic nature of the training set, this approach could be applied to the automatization of any photoelectron spectroscopy system, without the need of experimental reference spectra and with a low computational effort.
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Submitted 12 September, 2019;
originally announced September 2019.
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Band offset and gap tuning of tetragonal CuO-SrTiO3 heterojunctions
Authors:
Giovanni Drera,
Alessio Giampietri,
Alfredo Febbrari,
Maddalena Patrini,
Maria Cristina Mozzati,
Luigi Sangaletti
Abstract:
In this work we analyze the electronic structure at the junction between a SrTiO3 (001) single crystal and a thin tetragonal CuO layer, grown by off-axis RF-sputtering. A detailed characterization of the film growth, based on atomic force microscopy and X-ray photoelectron diffraction measurements, demonstrates the epitaxial growth. We report several markers of a thickness-dependent modification o…
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In this work we analyze the electronic structure at the junction between a SrTiO3 (001) single crystal and a thin tetragonal CuO layer, grown by off-axis RF-sputtering. A detailed characterization of the film growth, based on atomic force microscopy and X-ray photoelectron diffraction measurements, demonstrates the epitaxial growth. We report several markers of a thickness-dependent modification of the film gap, found on both Cu 2p and valence band spectra; through spectroscopic ellipsometry analysis, we provide a direct proof of a band gap increase of the tetragonal CuO layer (1.57 eV) with respect to the thicker monoclinic CuO layer (1.35 eV). This phenomenon is further discussed in the light of cluster calculations and DFT+U simulations. Finally, we report the full experimental band junction diagram, showing a staggered configuration suitable to charge-separation applications, such as photovoltaics and photocatalisys; this configuration is observed up to very low (<3 nm) film thickness due to the gap broadening effect.
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Submitted 30 January, 2019;
originally announced January 2019.
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Cation diffusion and hybridization effects at the Mn-GaSe(0001) interface probed by soft X-ray electron spectroscopies
Authors:
S. Dash,
G. Drera,
E. Magnano,
F. Bondino,
P. Galinetto,
M. C. Mozzati,
G. Salvinelli,
V. Aguekian,
L. Sangaletti
Abstract:
The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga cations and Mn-Se hybridization effects are found both in core level and valence band photoemission spectra. The Mn cation valence state is probed by XAS measurem…
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The electronic properties of the Mn:GaSe interface, produced by evaporating Mn at room temperature on an epsilon-GaSe(0001) single crystal surface, have been studied by soft X-ray spectroscopies. Substitutional effects of Mn replacing Ga cations and Mn-Se hybridization effects are found both in core level and valence band photoemission spectra. The Mn cation valence state is probed by XAS measurements at the Mn L-edge, which indicate that Mn diffuses into the lattice as a Mn2+ cation with negligible crystal field effects. The Mn spectral weight in the valence band is probed by resonant photoemission spectroscopy at the Mn L-edge, which also allowed an estimation of the charge transfer and Mott-Hubbard energies on the basis of impurity-cluster configuration-interaction model of the photoemission process. The charge transfer energy is found to scale with the energy gap of the system. Competing effects of Mn segregation on the surface have been identified, and the transition from the Mn diffusion through the surface to the segregation of metallic layers on the surface has been tracked by core-level photoemission.
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Submitted 13 May, 2013; v1 submitted 8 March, 2013;
originally announced March 2013.
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Band offsets and density of Ti3+ states probed by X-ray photoemission on LaAlO3/SrTiO3 heterointerfaces and their LaAlO3 and SrTiO3 bulk precursors
Authors:
G. Drera,
G. Salvinelli,
A. Brinkman,
M. Huijben,
G. Koster,
H. Hilgenkamp,
G. Rijnders,
D. Visentin,
L. Sangaletti
Abstract:
A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the…
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A set of LaAlO3/SrTiO3 (LAO-STO) interfaces has been probed by X-ray photoemission spectroscopy in order to contrast and compare the effects of LAO overlayer thickness and of the growth conditions on the electronic properties of these heterostructures. These effects are tracked by considering the band-offset and the density of Ti3+ states, respectively. It is shown that the dominant effects on the local electronic properties are determined by the O2 partial pressure during the growth. In particular, a low P(O2) yields Ti3+ states with higher density and lower binding energy as compared to the sample grown at high P(O2) or to the bare STO reference sample. Band offset effects are all below about 0.7 eV, but a careful analysis of Ti 2p and Sr 3d peaks shows that valence band offsets can be at the origin of the observed peak width. In particular, the largest offset is shown by the conducting sample, that displays the largest Ti 2p and Sr 3d peak widths.
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Submitted 23 November, 2012;
originally announced November 2012.
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Electronic structure of TiO2 thin films and LaAlO3-SrTiO3 heterostructures: the role of titanium 3d1 states in magnetic and transport properties
Authors:
Giovanni Drera
Abstract:
In this Thesis, a study of the electronic structure of two Ti-based oxide systems, TiO2 thin films and the ultra-thin LaAlO3-SrTiO3 (LAO-STO) heterojunctions, is given. A weak room-temperature ferromagnetism (FM) has been detected in slightly reduced TiO2 thin film and in other oxides; as these materials are insulating closed-shell systems, this phenomenon has been classified as "d0 magnetism". Si…
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In this Thesis, a study of the electronic structure of two Ti-based oxide systems, TiO2 thin films and the ultra-thin LaAlO3-SrTiO3 (LAO-STO) heterojunctions, is given. A weak room-temperature ferromagnetism (FM) has been detected in slightly reduced TiO2 thin film and in other oxides; as these materials are insulating closed-shell systems, this phenomenon has been classified as "d0 magnetism". Since this magnetism could be related to the growth process and to the presence of defects (oxygen vacancies, VO), an analysis of Ti electronic states (especially of Ti3+ energy levels) is mandatory. The first part of this work is devoted to the magnetic characterization of a set of TiO2 and N-doped TiO2 samples, together with the analysis of Ti 3d-related states carried out with X-ray photoemission (XPS) and resonant photoemission (ResPES). The hypothesis of clustered VO as the source of FM is then discussed in the light of the experimental and theoretical results. Another interesting oxide system in which the stoichiometry of Ti ions play a fundamental role is the LAO-STO interface. In fact, while LAO and STO separately are two band insulators, the interface created by growing LAO on the top of STO (001) has found to become metallic, hosting a 2D electron gas. The second part of this Thesis is devoted to the study of conductive and insulating LAO-STO interfaces, carried out by XPS, X-ray absorption (XAS) and with ResPES. The sample stoichiometry is evaluated through a comparison with LAO and STO single crystals. A resonance enhancement of the conductive Ti states, associated to Ti3+ ions, is reported and compared to theoretical calculations. On the basis of these results, the origin of metallic states in ultra-thin LAO-STO interfaces is properly addressed. In addition, a characterization of the structural disorder at the interface is shown, carried out with angle-resolved XPS.
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Submitted 30 October, 2012;
originally announced October 2012.
