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Design and Performance of Parallel-channel Nanocryotrons in Magnetic Fields
Authors:
Timothy Draher,
Tomas Polakovic,
Yi Li,
John Pearson,
Alan Dibos,
Zein-Eddine Meziani,
Zhili Xiao,
Valentine Novosad
Abstract:
We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed at enhancing the device's performance in magnetic field environments. The common challenge in nTron technology is to maintain efficient operation under varying…
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We introduce a design modification to conventional geometry of the cryogenic three-terminal switch, the nanocryotron (nTron). The conventional geometry of nTrons is modified by including parallel current-carrying channels, an approach aimed at enhancing the device's performance in magnetic field environments. The common challenge in nTron technology is to maintain efficient operation under varying magnetic field conditions. Here we show that the adaptation of parallel channel configurations leads to an enhanced gate signal sensitivity, an increase in operational gain, and a reduction in the impact of superconducting vortices on nTron operation within magnetic fields up to 1 Tesla. Contrary to traditional designs that are constrained by their effective channel width, the parallel nanowire channels permits larger nTron cross sections, further bolstering the device's magnetic field resilience while improving electro-thermal recovery times due to reduced local inductance. This advancement in nTron design not only augments its functionality in magnetic fields but also broadens its applicability in technological environments, offering a simple design alternative to existing nTron devices.
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Submitted 4 December, 2023; v1 submitted 9 October, 2023;
originally announced October 2023.
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Tunable Magnon-Photon Coupling by Magnon Band Gap in a Layered Hybrid Perovskite Antiferromagnet
Authors:
Yi Li,
Timothy Draher,
Andrew H. Comstock,
Yuzan Xiong,
Md Azimul Haque,
Elham Easy,
Jiang-Chao Qian,
Tomas Polakovic,
John E. Pearson,
Ralu Divan,
Jian-Min Zuo,
Xian Zhang,
Ulrich Welp,
Wai-Kwong Kwok,
Axel Hoffmann,
Joseph M. Luther,
Matthew C. Beard,
Dali Sun,
Wei Zhang,
Valentine Novosad
Abstract:
Tunability of coherent coupling between fundamental excitations is an important prerequisite for expanding their functionality in hybrid quantum systems. In hybrid magnonics, the dipolar interaction between magnon and photon usually persists and cannot be switched off. Here, we demonstrate this capability by coupling a superconducting resonator to a layered hybrid perovskite antiferromagnet, which…
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Tunability of coherent coupling between fundamental excitations is an important prerequisite for expanding their functionality in hybrid quantum systems. In hybrid magnonics, the dipolar interaction between magnon and photon usually persists and cannot be switched off. Here, we demonstrate this capability by coupling a superconducting resonator to a layered hybrid perovskite antiferromagnet, which exhibits a magnon band gap due to its intrinsic Dzyaloshinskii-Moriya interaction. The pronounced temperature sensitivity of the magnon band gap location allows us to set the photon mode within the gap and to disable magnon-photon hybridization. When the resonator mode falls into the magnon band gap, the resonator damping rate increases due to the nonzero coupling to the detuned magnon mode. This phenomena can be used to quantify the magnon band gap using an analytical model. Our work brings new opportunities in controlling coherent information processing with quantum properties in complex magnetic materials.
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Submitted 26 July, 2023;
originally announced July 2023.
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Ion-beam Assisted Sputtering of Titanium Nitride Thin Films
Authors:
Timothy Draher,
Tomas Polakovic,
Juliang Li,
Yi Li,
Ulrich Welp,
Jidong Samuel Jiang,
John Pearson,
Whitney Armstrong,
Zein-Eddine Meziani,
Clarence Chang,
Wai-Kwong Kwok,
Zhili Xiao,
Valentine Novosad
Abstract:
Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. In previous work on niobium nitride, ion beam-assisted sputtering (IBAS) reduced nitrogen sensitivity during deposition in tandem with an increase in nominal critical t…
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Titanium nitride is a material of interest for many superconducting devices such as nanowire microwave resonators and photon detectors. Thus, controlling the growth of TiN thin films with desirable properties is of high importance. In previous work on niobium nitride, ion beam-assisted sputtering (IBAS) reduced nitrogen sensitivity during deposition in tandem with an increase in nominal critical temperature. We have deposited thin films of titanium nitride by both, the conventional method of DC reactive magnetron sputtering and the IBAS method and compare their superconducting critical temperatures Tc as functions of thickness, sheet resistance, and nitrogen flow rate. We perform electrical and structural characterizations by electric transport and X-ray diffraction measurements. Compared to the conventional method of reactive sputtering, the IBAS technique has demonstrated a 10% increase in nominal critical temperature and 33% reduced sensitivity to nitrogen flow, without noticeable variation in the lattice structure. Additionally, we explore the behavior of superconducting Tc in ultra-thin films. Trends in films grown at high nitrogen concentrations follow predictions of mean-field theory in disordered films and show suppression of superconducting Tc due to geometric effects, while nitride films grown at low nitrogen concentrations strongly deviate from the theoretical models.
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Submitted 12 April, 2023; v1 submitted 26 October, 2022;
originally announced October 2022.
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Coulomb barrier creation by means of electronic field emission in nanolayer capacitors
Authors:
Eduard Ilin,
Irina Burkova,
Timothy Draher,
Eugene V. Colla,
Alfred Hubler,
Alexey Bezryadin
Abstract:
The main mechanism of energy loss in capacitors with nanoscale dielectric films is leakage currents. Using the example of Al-Al2O3-Al, we show that there are two main contributions, namely the cold field emission effect and the hopping conductivity through the dielectric. Our main finding is that an application of a high electric field, ~0.6-0.7 GV/m, causes electrons to penetrate the dielectric.…
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The main mechanism of energy loss in capacitors with nanoscale dielectric films is leakage currents. Using the example of Al-Al2O3-Al, we show that there are two main contributions, namely the cold field emission effect and the hopping conductivity through the dielectric. Our main finding is that an application of a high electric field, ~0.6-0.7 GV/m, causes electrons to penetrate the dielectric. If the temperature is sufficiently low, such electrons become permanently trapped in the dielectric. To achieve a strong charging of the dielectric, the voltage needs to be high enough, so that a field emission occurs from the cathode into the dielectric. Such a strongly charged dielectric layer generates a Coulomb barrier and leads to a suppression of the leakage current. Thus, after the dielectric nanolayer of the capacitor is charged, the field emission and the hopping conductivity are both suppressed, and the hysteresis of the I-V curve disappears. The phenomenon is observed at temperatures up to ~225 K. It would be advantageous to identify insulators in which the phenomenon of the Coulomb barriers persists even up to the room temperature, but at this time it is not known whether such dielectrics exist and/or can be designed.
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Submitted 5 November, 2020;
originally announced November 2020.
