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Ordered buckling structures in a twisted crimped tube
Authors:
Pan Dong,
Nathan C. Keim,
Joseph D. Paulsen
Abstract:
When a ribbon or tube is twisted far enough it forms buckles and wrinkles. Its new geometry can be strikingly ordered, or hopelessly disordered. Here we study this process in a tube with hybrid boundary conditions: one end a cylinder, and the other end crimped flat like a ribbon, so that the sample resembles a toothpaste tube. The resulting irregular structures and mechanical responses can be dram…
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When a ribbon or tube is twisted far enough it forms buckles and wrinkles. Its new geometry can be strikingly ordered, or hopelessly disordered. Here we study this process in a tube with hybrid boundary conditions: one end a cylinder, and the other end crimped flat like a ribbon, so that the sample resembles a toothpaste tube. The resulting irregular structures and mechanical responses can be dramatically different from those of a ribbon. However, when we form two creases in the tube prior to twisting, we obtain an ordered structure composed of repeating triangular facets oriented at varying angles, and a more elastic torque response, reminiscent of the creased helicoid structure of a twisted ribbon. We measure how the torque and structural evolution depend on parameters such as material thickness and the twist angle. When only part of the tube is pre-creased, the ordered structures are confined to this segment. Surprisingly, in some tubes made from thicker sheets, an ordered structure forms without pre-creasing. This study provides insights into controlling the buckling of thin shells, offering a potential pathway for designing ordered structures in soft materials.
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Submitted 27 May, 2025;
originally announced May 2025.
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Coexisting Triferroic and Multiple Types of Valley Polarization by Structural Phase Transition in Two-Dimensional Materials
Authors:
Chao Wu,
Hanbo Sun,
Pengqiang Dong,
Yin-Zhong Wu,
Ping Li
Abstract:
The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of spintronic and valleytronic devices. However, it is rare that there are triferroic orders and multiple types of valley polarization in a real material. Here, we propose a mechanism to realize triferroic order coexistence…
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The multiferroic materials, which coexist magnetism, ferroelectric, and ferrovalley, have broad practical application prospects in promoting the miniaturization and integration of spintronic and valleytronic devices. However, it is rare that there are triferroic orders and multiple types of valley polarization in a real material. Here, we propose a mechanism to realize triferroic order coexistence and multiple types of valley polarization by structural phase transition in two-dimensional (2D) materials. The 1T and 2H phase OsBr2 monolayers exhibit non-magnetic semiconductor and ferromagnetic semiconductor with valley polarization up to 175.49 meV, respectively. Interestingly, the 1T phase OsBr2 bilayer shows the tri-state valley polarization due to lattice symmetry breaking, while the valley polarization of 2H phase bilayer originates from the combined effect of time-reversal symmetry breaking and spin-orbit coupling. Furthermore, the valley polarization and ferroelectric polarization of 1T phase AB stackings and 2H phase AA stackings can be manipulated via interlayer sliding. Importantly, we have verified that the 2H phase can be transformed to 1T phase by Li+ ion intercalation, while the 2H phase can occur the structural phase transition into the 1T phase by infrared laser induction. Our work provides a feasible strategy for manipulating valley polarization and a design idea for nano-devices with nonvolatile multiferroic properties.
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Submitted 25 February, 2025;
originally announced February 2025.
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Multifield Induced Antiferromagnet Transformation into Altermagnet and Realized Anomalous Valley Hall Effect in Two-dimensional Materials
Authors:
Hanbo Sun,
Pengqiang Dong,
Chao Wu,
Ping Li
Abstract:
Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Currently, researchers are focus on searching three-dimensional altermagnetism and exploring its novel physical properties. However, there is a lack of understanding of the physical origin of two-dimensional altermagnetic e…
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Altermagnetism, as a new category of collinear magnetism distinct from traditional ferromagnetism and antiferromagnetism, exhibits the spin splitting without net magnetization. Currently, researchers are focus on searching three-dimensional altermagnetism and exploring its novel physical properties. However, there is a lack of understanding of the physical origin of two-dimensional altermagnetic emergent behavior. Here, we propose an approach to realize the transition from Neel antiferromagnetism to altermagnetism in two-dimensional system using an electric field, Janus structure, and ferroelectric substrate. In monolayer VPSe3, we demonstrate that multiple-physical-fields cause the upper and lower Se atoms unequal to break PT symmetry, resulting in altermagnetic spin splitting. Noted that monolayer VPSe3 produces a spontaneous valley splitting of 2.91 meV at the conduction band minimum. The electric field can effectively tune the valley splitting magnitude, while the Janus structure not only changes the valley splitting magnitude, but also alters the direction. More interestingly, when the ferroelectric polarization of Al2S3 is upward, the direction of valley polarization is switched and the magnitude is almost unchanged. However, the valley splitting sigfinicantly increases under the downward. It is worth noting that the ferroelectric polarization can switch altermagnetic effect and realize anomalous valley Hall effect. Besides, we reveal the microscopic mechanism of valley splitting by an effective Hamiltonian. Our findings not only provide a method to designing altermagnet, but also enriches the valley physics.
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Submitted 25 February, 2025;
originally announced February 2025.
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Gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals heterostructure
Authors:
Yifan Ding,
Chenyazhi Hu,
Wenhui Li,
Lan Chen,
Jiadian He,
Yiwen Zhang,
Xiaohui Zeng,
Yanjiang Wang,
Peng Dong,
Jinghui Wang,
Xiang Zhou,
Yueshen Wu,
Yulin Chen,
Jun Li
Abstract:
The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-co…
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The demand for low-power devices is on the rise as semiconductor engineering approaches the quantum limit and quantum computing continues to advance. Two-dimensional (2D) superconductors, thanks to their rich physical properties, hold significant promise for both fundamental physics and potential applications in superconducting integrated circuits and quantum computation. Here, we report a gate-controlled superconducting switch in GaSe/NbSe$_2$ van der Waals (vdW) heterostructure. By injecting high-energy electrons into NbSe$_2$ under an electric field, a non-equilibrium state is induced, resulting in significant modulation of the superconducting properties. Owing to the intrinsic polarization of ferroelectric GaSe, a much steeper subthreshold slope and asymmetric modulation are achieved, which is beneficial to the device performance. Based on these results, a superconducting switch is realized that can reversibly and controllably switch between the superconducting and normal state under an electric field. Our findings highlight a significant high-energy injection effect from band engineering in 2D vdW heterostructures combining superconductors and ferroelectric semiconductors, and demonstrate the potential applications for superconducting integrated circuits.
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Submitted 26 September, 2024;
originally announced September 2024.
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Ferroelectric tuning of the valley polarized metal-semiconductor transition in Mn2P2S3Se3/Sc2CO2 van der Waals heterostructures and application to nonlinear Hall effect devices
Authors:
Hanbo Sun,
Yewei Ren,
Chao Wu,
Pengqiang Dong,
Weixi Zhang,
Yin-Zhong Wu,
Ping Li
Abstract:
In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and nonlinear Hall effect by the 2D ferroelectric substrate. The monolayer Mn2P2S3Se3 is a robust antiferromagnetic valley polarized semiconductor. Importantly, th…
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In order to promote the development of the next generation of nano-spintronic devices, it is of great significance to tune the freedom of valley in two-dimensional (2D) materials. Here, we propose a mechanism for manipulating the valley and nonlinear Hall effect by the 2D ferroelectric substrate. The monolayer Mn2P2S3Se3 is a robust antiferromagnetic valley polarized semiconductor. Importantly, the valley polarized metal-semiconductor phase transition of Mn2P2S3Se3 can be effectively tuned by switching the ferroelectric polarization of Sc2CO2. We reveal the microscopic mechanism of phase transition, which origins from the charge transfer and band alignment. Additionally, we find that transformed polarization direction of Sc2CO2 flexibly manipulate the Berry curvature dipole. Based on this discovery, we present the detection valley polarized metal-semiconductor transition by the nonlinear Hall effect devices. These findings not only offer a scheme to tune the valley degree of freedom, but also provide promising platform to design the nonlinear Hall effect devices.
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Submitted 9 September, 2024;
originally announced September 2024.
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Observation of superconducting diode effect in antiferromagnetic Mott insulator $α$-RuCl$_3$
Authors:
Jiadian He,
Yifan Ding,
Xiaohui Zeng,
Yiwen Zhang,
Yanjiang Wang,
Peng Dong,
Xiang Zhou,
Yueshen Wu,
Kecheng Cao,
Kejing Ran,
Jinghui Wang,
Yulin Chen,
Kenji Watanabe,
Takashi Taniguchi,
Shun-Li Yu,
Jian-Xin Li,
Jinsheng Wen,
Jun Li
Abstract:
Nonreciprocal superconductivity, also called as superconducting diode effect that spontaneously breaks time-reversal symmetry, is characterized by asymmetric critical currents under opposite applied current directions. This distinct state unveils a rich ore of intriguing physical properties, particularly in the realm of nanoscience application of superconductors. Towards the experimental realizati…
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Nonreciprocal superconductivity, also called as superconducting diode effect that spontaneously breaks time-reversal symmetry, is characterized by asymmetric critical currents under opposite applied current directions. This distinct state unveils a rich ore of intriguing physical properties, particularly in the realm of nanoscience application of superconductors. Towards the experimental realization of superconducting diode effect, the construction of two-dimensional heterostructures of magnets and $s$-wave superconductors is considered to be a promising pathway. In this study, we present our findings of superconducting diode effect manifested in the magnetic Mott insulator $α$-RuCl$_3$. This phenomenon is induced by the proximity effect within a van der Waals heterostructure, consisting of thin $α$-RuCl$_3$/NbSe$_2$ flakes. Through transport property measurements, we have confirmed a weak superconducting gap of 0.2 meV, which is significantly lower than the intrinsic gap of NbSe$_2$(1.2 meV). Upon the application of a weak magnetic field below 70 mT, we observed an asymmetry in the critical currents under positive and negative applied currents. This observation demonstrates a typical superconducting diode effect in the superconducting $α$-RuCl$_3$. The superconducting diode effect and nonreciprocal resistance are observed exclusively when the magnetic field is aligned out-of-plane. This suggests that an Ising-type spin-orbit coupling in the superconducting $α$-RuCl$_3$ may be responsible for the mechanism. Our findings furnish a platform for the exploration of superconducting diode effect via the artificial construction of heterostructures.
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Submitted 6 September, 2024;
originally announced September 2024.
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Intrinsic supercurrent diode effect in NbSe2 nanobridge
Authors:
Yiwen Zhang,
Jiliang Cai,
Peng Dong,
Jiadian He,
Yifan Ding,
Jinghui Wang,
Xiang Zhou,
Kecheng Cao,
Yueshen Wu,
Jun Li
Abstract:
The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various…
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The significance of the superconducting diode effect lies in its potential application as a fundamental component in the development of next-generation superconducting circuit technology. The stringent operating conditions at low temperatures have posed challenges for the conventional semiconductor diode, primarily due to its exceptionally high resistivity. In response to this limitation, various approaches have emerged to achieve the superconducting diode effect, primarily involving the disruption of inversion symmetry in a two-dimensional superconductor through heterostructure fabrication. In this study, we present a direct observation of the supercurrent diode effect in a NbSe2 nanobridge with a length of approximately 15 nm, created using focused helium ion beam fabrication. Nonreciprocal supercurrents were identified, reaching a peak value of approximately 380 $μ$A for each bias polarity at $B_{z}^{max} =\pm 0.2$ mT. Notably, the nonreciprocal supercurrent can be toggled by altering the bias polarity. This discovery of the superconducting diode effect introduces a novel avenue and mechanism through nanofabrication on a superconducting flake, offering fresh perspectives for the development of superconducting devices and potential circuits.
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Submitted 25 February, 2024;
originally announced February 2024.
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Nonreciprocal charge transport in the titanium sesquioxide heterointerface superconductor
Authors:
Peng Dong,
Lijie Wang,
Guanqun Zhang,
Jiadian He,
Yiwen Zhang,
Yifan Ding,
Xiaohui Zeng,
Jinghui Wang,
Xiang Zhou,
Yueshen Wu,
Wei Li,
Jun Li
Abstract:
Nonreciprocal charge transport in heterostructural superconductors exhibits appealing quantum physical phenomena and holds the promising potential for superconducting circuits applications. Realizing a nonreciprocity is, however, fundamentally and technologically challenging, as it requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, w…
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Nonreciprocal charge transport in heterostructural superconductors exhibits appealing quantum physical phenomena and holds the promising potential for superconducting circuits applications. Realizing a nonreciprocity is, however, fundamentally and technologically challenging, as it requires a material structure without a centre of inversion, which is scarce among superconducting materials. Here, we report an evidence of helical superconductivity, in which the Rashba spin-orbit coupling induces momentum-dependent superconducting gap in the inversion symmetry breaking heterointerface superconductor consisting of Mott insulating Ti$_2$O$_3$ and polar semiconducting GaN. Remarkably, the nonlinear responses emerge in the superconducting transition regime, when the magnetic field is precisely aligned in-plane orientations perpendicular to the applied current. In particular, the observed nonreciprocal supercurrent is extremely sensitive to the direction of the magnetic field for 0.5 degree, suggestive of a crossover from a symmetry breaking state to a symmetric one. Our finding not only unveils the underlying rich physical properties in heterointerface superconductors, but also provides an exciting opportunity for the development of novel mesoscopic superconducting devices.
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Submitted 23 January, 2024;
originally announced January 2024.
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Colossal Magnetoresistance in Twisted Intertwined Graphene Spirals
Authors:
Yiwen Zhang,
Bo Xie,
Yue Yang,
Yueshen Wu,
Xin Lu,
Yuxiong Hu,
Yifan Ding,
Jiadian He,
Peng Dong,
Jinghui Wang,
Xiang Zhou,
Jianpeng Liu,
Zhu-Jun Wang,
Jun Li
Abstract:
Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moir$\acute{e}$ system, which demonstrates CMR…
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Colossal magnetoresistance (CMR) is highly applicable in spintronic devices such as magnetic sensors, magnetic memory, and hard drives. Typically, CMR is found in Weyl semimetals characterized by perfect electron-hole symmetry or exceptionally high electric conductivity and mobility. Our study explores this phenomenon in a recently developed graphene moir$\acute{e}$ system, which demonstrates CMR owing to its topological structure and high-quality crystal formation. We specifically investigate the electronic properties of three-dimensional (3D) intertwined twisted graphene spirals (TGS), manipulating the screw dislocation axis to achieve a rotation angle of 7.3$^{\circ}$. Notably, at 14 T and 2 K, the magnetoresistance of these structures reached 1.7$\times$10$^7$%, accompanied by an unexpected metal-to-insulator transition as the temperature increased. This transition becomes noticeable when the magnetic field exceeds a minimal threshold of approximately 0.1 T. These observations suggest the existence of complex, correlated states within the partially filled three-dimensional Landau levels of the 3D TGS system. Our findings open up new possibilities for achieving CMR by engineering the topological structure of 2D layered moir$\acute{e}$ systems.
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Submitted 26 November, 2023;
originally announced November 2023.
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Constructing the Fulde-Ferrell-Larkin-Ovchinnikov state in antiferromagnetic insulator CrOCl
Authors:
Yifan Ding,
Jiadian He,
Shihao Zhang,
Huakun Zuo,
Pingfan Gu,
Jiliang Cai,
Xiaohui Zeng,
Pu Yan,
Kecheng Cao,
Kenji Watanabe,
Takashi Taniguchi,
Peng Dong,
Yiwen Zhang,
Yueshen Wu,
Xiang Zhou,
Jinghui Wang,
Yulin Chen,
Yu Ye,
Jianpeng Liu,
Jun Li
Abstract:
Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, w…
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Time reversal symmetry breaking in superconductors, resulting from external magnetic fields or spontaneous magnetization, often leads to unconventional superconducting properties. In this way, a conventional Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) state, characterized by the Cooper pairs with nonzero total momentum, may be realized by the Zeeman effect caused from external magnetic fields. Here, we report the observation of superconductivity in a few-layer antiferromagnetic insulator CrOCl by utilizing superconducting proximity effect with NbSe2 flakes. The superconductivity demonstrates a considerably weak gap of about 0.12 meV and the in-plane upper critical field reveals as behavior of the FFLO state at low temperature. Our first-principles calculations indicate that the proximitized superconductivity may exist in the CrOCl layer with Cr vacancies or line-defects. Moreover, the FFLO state could be induced by the inherent larger spin splitting in the CrOCl layer. Our findings not only demonstrate the fascinating interaction between superconductivity and magnetism, but also provide a possible path to construct FFLO state by intrinsic time reversal symmetry breaking and superconducting proximity effect.
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Submitted 31 October, 2023;
originally announced November 2023.
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Proximity effect induced intriguing superconductivity in van der Waals heterostructure of magnetic topological insulator and conventional superconductor
Authors:
Peng Dong,
Xiang Zhou,
Xiaofei Hou,
Jiadian He,
Yiwen Zhang,
Yifan Ding,
Xiaohui Zeng,
Jinghui Wang,
Yueshen Wu,
Kenji Watanabe,
Takashi Taniguchi,
Wei Xia,
Yanfeng Guo,
Yulin Chen,
Wei Li,
Jun Li
Abstract:
Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological insulator and a superconductor is, however, still widely open. Here, we systemically report an emergent superconductivity in a cross-junction composed of a magnetic top…
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Nontrivial topological superconductivity has received enormous research attentions due to its potential for diverse applications in topological quantum computing. The intrinsic issue concerning the correlation between a topological insulator and a superconductor is, however, still widely open. Here, we systemically report an emergent superconductivity in a cross-junction composed of a magnetic topological insulator MnBi2Te4 and a conventional superconductor NbSe2. Remarkably, the interface indicates existence of a reduced superconductivity at surface of NbSe2 and a proximity-effectinduced superconductivity at surface of MnBi2Te4. Furthermore, the in-plane angular-dependent magnetoresistance measurements reveal the fingerprints of the paring symmetry behaviors for these superconducting gaps as a unconventional nature. Our findings extend our views and ideas of topological superconductivity in the superconducting heterostructures with time-reversal symmetry breaking, offering an exciting opportunity to elucidate the cooperative effects on the surface state of a topological insulator aligning a superconductor.
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Submitted 31 October, 2023;
originally announced October 2023.
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A wrinkled cylindrical shell as a tunable locking material
Authors:
Pan Dong,
Mengfei He,
Nathan C. Keim,
Joseph D. Paulsen
Abstract:
A buckled sheet offers a reservoir of material that can be unfurled at a later time. For sufficiently thin yet stiff materials, this geometric process has a striking mechanical feature: when the slack runs out, the material locks to further extension. Here we establish a simple route to a tunable locking material - a system with an interval where it is freely deformable under a given deformation m…
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A buckled sheet offers a reservoir of material that can be unfurled at a later time. For sufficiently thin yet stiff materials, this geometric process has a striking mechanical feature: when the slack runs out, the material locks to further extension. Here we establish a simple route to a tunable locking material - a system with an interval where it is freely deformable under a given deformation mode, and where the endpoints of this interval can be changed continuously over a wide range. We demonstrate this type of mechanical response in a thin cylindrical shell subjected to axial twist and compression, and we rationalize our results with a simple geometric model.
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Submitted 2 March, 2023;
originally announced March 2023.
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Nonreciprocal Charge Transport in Topological Kagome Superconductor CsV$_{3}$Sb$_{5}$
Authors:
Yueshen Wu,
Qi Wang,
Xiang Zhou,
Jinghui Wang,
Peng Dong,
Jiadian He,
Yifan Ding,
Bolun Teng,
Yiwen Zhang,
Yifei Li,
Chenglong Zhao,
Hongti Zhang,
Jianpeng Liu,
Yanpeng Qi,
Kenji Watanabe,
Takashi Taniguchi,
Jun Li
Abstract:
Nonreciprocal charge transport phenomena are widely studied in two-dimensional superconductors, which demonstrate unidirectional-anisotropy magnetoresistances as a result of symmetry breaking. Here, we report a strong nonreciprocal transport phenomenon in superconducting CsV$_{3}$Sb$_{5}$ thin flakes. The second harmonic voltages, mainly originating from the rectification effect of vortex motion,…
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Nonreciprocal charge transport phenomena are widely studied in two-dimensional superconductors, which demonstrate unidirectional-anisotropy magnetoresistances as a result of symmetry breaking. Here, we report a strong nonreciprocal transport phenomenon in superconducting CsV$_{3}$Sb$_{5}$ thin flakes. The second harmonic voltages, mainly originating from the rectification effect of vortex motion, are unambiguously developed with in-plane and out-of-plane magnetic fields, and their magnitudes are comparable to those in noncentrosymmetric superconductors. The second harmonic magnetoresistances split into several peaks and some of them reverse their signs by ramping the magnetic field or the current within the superconducting transition. The nonreciprocity suggests a strong asymmetry in CsV$_{3}$Sb$_{5}$. The centrosymmetric structure and symmetric electronic phases in CsV$_{3}$Sb$_{5}$ can hardly induce the distinct nonreciprocal transport phenomenon, which could be correlated to a symmetry breaking from an unconventional superconducting order parameter symmetry.
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Submitted 19 October, 2022;
originally announced October 2022.
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La-doping effect on spin-orbit coupled Sr2IrO4 probed by x-ray absorption spectroscopy
Authors:
Jie Cheng,
Xuanyong Sun,
Shengli Liu,
Bin Li,
Haiyun Wang,
Peng Dong,
Yu Wang,
Wei Xu
Abstract:
Sr2IrO4 was predicted to be an unconventional superconductor upon carrier doping since it highly resembles the high-temperature cuprates. Here, to understand carrier doping effect on spin-orbit coupled Mott insulator Sr2IrO4, the electronic structure and local structure distortion for Sr2-xLaxIrO4 system have been investigated by x-ray absorption spectroscopy (XAS). By comparing the intensity of w…
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Sr2IrO4 was predicted to be an unconventional superconductor upon carrier doping since it highly resembles the high-temperature cuprates. Here, to understand carrier doping effect on spin-orbit coupled Mott insulator Sr2IrO4, the electronic structure and local structure distortion for Sr2-xLaxIrO4 system have been investigated by x-ray absorption spectroscopy (XAS). By comparing the intensity of white-line features at the Ir L2,3 absorption edges, we observe remarkably large branching ratios in La-doped compounds, greater than that of the parent material Sr2IrO4, suggesting a strong spin-orbit interaction (SOI) for Sr2IrO4-based system. Moreover, extended x-ray absorption fine structure (EXAFS) spectra demonstrate more regular IrO6 octahedra, i.e. the weakened crystal electric field (CEF) versus La-doping. By theoretical calculations, the synergistic effect of regular IrO6 octahedra and electron doping is established, which accounts for the transition from a Mott insulator to a conductive state in Sr2-xLaxIrO4-based system.
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Submitted 31 October, 2016;
originally announced October 2016.
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Density functional study of X monodoped and codoped (X=C, N, S, F) anatase TiO2
Authors:
Pengyu Dong,
Huanhuan Pei,
Qinfang Zhang,
Yuhua Wang
Abstract:
Using density-functional theory calculations within the generalized gradient corrected approximation, the models that nonmetallic impurities X substituted for O or Ti sites in anatase TiO2 were investigated. The conclusion of the valence states of nonmetallic impurities X substituted for O or Ti sites in TiO2 is also supported by the results of optimized cell parameters and the local structures. F…
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Using density-functional theory calculations within the generalized gradient corrected approximation, the models that nonmetallic impurities X substituted for O or Ti sites in anatase TiO2 were investigated. The conclusion of the valence states of nonmetallic impurities X substituted for O or Ti sites in TiO2 is also supported by the results of optimized cell parameters and the local structures. Furthermore, an effective nonmetallic passivated codoping approach to modify the band edges of TiO2 is proposed.
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Submitted 30 November, 2013;
originally announced December 2013.
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Implementation of Grover search algorithm with Josephson charge qubits
Authors:
Xiao-Hu Zheng,
Ping Dong,
Zheng-Yuan Xue,
Zhuo-Liang Cao
Abstract:
A scheme of implementing the Grover search algorithm based on Josephson charge qubits has been proposed, which would be a key step to scale more complex quantum algorithms and very important for constructing a real quantum computer via Josephson charge qubits. The present scheme is simple but fairly efficient, and easily manipulated because any two-charge-qubit can be selectively and effectively…
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A scheme of implementing the Grover search algorithm based on Josephson charge qubits has been proposed, which would be a key step to scale more complex quantum algorithms and very important for constructing a real quantum computer via Josephson charge qubits. The present scheme is simple but fairly efficient, and easily manipulated because any two-charge-qubit can be selectively and effectively coupled by a common inductance. More manipulations can be carried out before decoherence sets in. Our scheme can be realized within the current technology.
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Submitted 11 March, 2007; v1 submitted 27 September, 2006;
originally announced September 2006.
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Two-dimensional structures of ferroelectric domain inversion in LiNbO3 by direct electron beam lithography
Authors:
J. He,
S. H. Tang,
Y. Q. Qin,
P. Dong,
H. Z. Zhang,
C. H. Kang,
W. X. Sun,
Z. X. Shen
Abstract:
We report on the fabrication of domain-reversed structures in LiNbO3 by means of direct electron beam lithography at room temperature without any static bias. The LiNbO3 crystals were chemically etched after the exposure of electron beam and then, the patterns of domain inversion were characterized by atomic force microscopy (AFM). In our experiment, an interesting phenomenon occurred when the e…
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We report on the fabrication of domain-reversed structures in LiNbO3 by means of direct electron beam lithography at room temperature without any static bias. The LiNbO3 crystals were chemically etched after the exposure of electron beam and then, the patterns of domain inversion were characterized by atomic force microscopy (AFM). In our experiment, an interesting phenomenon occurred when the electron beam wrote a one-dimensional (1-D) grating on the negative c-face: a two-dimensional (2-D) dotted array was observed on the positive c- face, which is significant for its potential to produce 2-D and three-dimensional photonic crystals. Furthermore, we also obtained 2-D ferroelectric domain inversion in the whole LiNbO3 crystal by writing the 2-D square pattern on the negative c-face. Such a structure may be utilized to fabricate 2-D nonlinear photonic crystal. AFM demonstrates that a 2-D domain-reversed structure has been achieved not only on the negative c-face of the crystal, but also across the whole thickness of the crystal.
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Submitted 28 July, 2005;
originally announced July 2005.
