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Fabrication and Characterization of Magnetic-Field-Resilient MoRe Superconducting Coplanar Waveguide Resonators
Authors:
Chang Geun Yu,
Bongkeon Kim,
Yong-Joo Doh
Abstract:
Magnetic-field-resilient superconducting coplanar waveguide (SCPW) resonators are essential for developing integrated quantum circuits of various qubits and quantum memory devices. Molybdenum-Rhenium (MoRe), which is a disordered superconducting alloy forming a highly transparent contact to the graphene and carbon nanotubes (CNTs), would be a promising platform for realizing the field-resilient SC…
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Magnetic-field-resilient superconducting coplanar waveguide (SCPW) resonators are essential for developing integrated quantum circuits of various qubits and quantum memory devices. Molybdenum-Rhenium (MoRe), which is a disordered superconducting alloy forming a highly transparent contact to the graphene and carbon nanotubes (CNTs), would be a promising platform for realizing the field-resilient SCPW resonators combined with graphene- and CNT-based nano-hybrid qubits. We fabricated MoRe SCPW resonators and investigated their microwave transmission characteristics with varying temperature and external magnetic field. Our observations show that the thickness of MoRe film is a critical parameter determining the lower critical field, kinetic inductance, and characteristic impedance of the SCPW resonator, resulting in drastic changes in the quality factor and the resonance frequency. As a result, we obtained a maximum value of $Q_{i} > 10^{4}$ in parallel magnetic fields up to $B_{||} = 0.15$ T for the 27-nm-thick MoRe resonator. Our experimental results suggest that MoRe SCPW resonator would be useful for integrating nano-hybrid spin or gatemon qubits and for developing spin-ensemble quantum memory devices.
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Submitted 30 November, 2022;
originally announced November 2022.
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Multiple Andreev reflections in topological insulator nanoribbons
Authors:
Rak-Hee Kim,
Nam-Hee Kim,
Bongkeon Kim,
Yasen Hou,
Dong Yu,
Yong-Joo Doh
Abstract:
Superconducting proximity junctions made of topological insulator (TI) nanoribbons (NRs) provide a useful platform for studying topological superconductivity. We report on the fabrication and measurement of Josephson junctions (JJs) using Sb doped Bi$_2$Se$_3$ NRs in contact with Al electrodes. Aharonov$-$Bohm and Altshuler$-$Aronov$-$Spivak oscillations of the axial magneto-conductance of TI NR w…
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Superconducting proximity junctions made of topological insulator (TI) nanoribbons (NRs) provide a useful platform for studying topological superconductivity. We report on the fabrication and measurement of Josephson junctions (JJs) using Sb doped Bi$_2$Se$_3$ NRs in contact with Al electrodes. Aharonov$-$Bohm and Altshuler$-$Aronov$-$Spivak oscillations of the axial magneto-conductance of TI NR were observed, indicating the existence of metallic surface states along the circumference of the TI NR. We observed the supercurrent in the TI NR JJ and subharmonic gap structures of the differential conductance due to multiple Andreev reflections. The interface transparency of the TI NR JJs estimated based on the excess current reaches $τ$ = 0.83, which is among the highest values reported for TI JJs. The temperature dependence of critical current is consistent with the short and ballistic junction model confirming the formation of highly transparent superconducting contacts on the TI NR. Our observations would be useful for exploring topological Josephson effects in TI NRs.
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Submitted 30 September, 2021;
originally announced October 2021.
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Optimal Conditions for Observing Fractional Josephson Effect in Topological Josephson Junctions
Authors:
Yeongmin Jang,
Yong-Joo Doh
Abstract:
Topological Josephson junctions (JJs), which contain Majorana bound states, are expected to exhibit 4$π$-periodic current-phase relation, thereby resulting in doubled Shapiro steps under microwave irradiation. We performed numerical calculations of dynamical properties of topological JJs using a modified resistively and capacitively shunted junction model and extensively investigated the progressi…
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Topological Josephson junctions (JJs), which contain Majorana bound states, are expected to exhibit 4$π$-periodic current-phase relation, thereby resulting in doubled Shapiro steps under microwave irradiation. We performed numerical calculations of dynamical properties of topological JJs using a modified resistively and capacitively shunted junction model and extensively investigated the progressive evolution of Shapiro steps as a function of the junction parameters and microwave power and frequency. Our calculation results indicate that the suppression of odd-integer Shapiro steps, i.e., evidence of the fractional ac Josephson effect, is enhanced significantly by the increase in the junction capacitance and IcRn product as well as the decrease in the microwave frequency even for the same portion of the 4$π$-periodic supercurrent. Our study provides the optimal conditions for observing the fractional ac Josephson effect; furthermore, our new model can be used to precisely quantify the topological supercurrent from the experimental data of topological JJs.
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Submitted 19 November, 2020; v1 submitted 8 November, 2020;
originally announced November 2020.
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Gate-Modulated Quantum Interference Oscillations in Sb-Doped Bi2Se3 Topological Insulator Nanoribbon
Authors:
Tae-Ha Hwang,
Hong-Seok Kim,
Yasen Hou,
Dong Yu,
Yong-Joo Doh
Abstract:
Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2…
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Topological insulator nanoribbons (TI NRs) provide a useful platform to explore the phase-coherent quantum electronic transport of topological surface states, which is crucial for the development of topological quantum devices. When applied with an axial magnetic field, the TI NR exhibits magnetoconductance (MC) oscillations with a flux period of h/e, i.e., Aharonov-Bohm (AB) oscillations, and h/2e, i.e., Altshuler-Aronov-Spivak (AAS) oscillations. Herein, we present an extensive study of the AB and AAS oscillations in Sb doped Bi$_2$Se$_3$ TI NR as a function of the gate voltage, revealing phase-alternating topological AB oscillations. Moreover, the ensemble-averaged fast Fourier transform analysis on the Vg dependent MC curves indicates the suppression of the quantum interference oscillation amplitudes near the Dirac point, which is attributed to the suppression of the phase coherence length within the low carrier density region. The weak antilocalization analysis on the perpendicular MC curves confirms the idea of the suppressed coherence length near the Dirac point in the TI NR.
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Submitted 5 October, 2020;
originally announced October 2020.
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Adjustable quantum interference oscillations in Sb-doped Bi2Se3 topological insulator nanoribbons
Authors:
Hong-Seok Kim,
Tae-Ha Hwang,
Nam-Hee Kim,
Yasen Hou,
Dong Yu,
H. -S. Sim,
Yong-Joo Doh
Abstract:
Topological insulator (TI) nanoribbons (NRs) provide a unique platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi2Se3…
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Topological insulator (TI) nanoribbons (NRs) provide a unique platform for investigating quantum interference oscillations combined with topological surface states. One-dimensional subbands formed along the perimeter of a TI NR can be modulated by an axial magnetic field, exhibiting Aharonov-Bohm (AB) and Altshuler-Aronov-Spivak (AAS) oscillations of magnetoconductance (MC). Using Sb-doped Bi2Se3 TI NRs, we found that the relative amplitudes of the two quantum oscillations can be tuned by varying the channel length, exhibiting crossover from quasi-ballistic to diffusive transport regimes. The AB and AAS oscillations were discernible even for a 70 micrometer long channel, while only the AB oscillations were observed for a short channel. Analyses based on ensemble-averaged fast Fourier transform of MC curves revealed exponential temperature dependences of the AB and AAS oscillations, from which the circumferential phase-coherence length and thermal length were obtained. Our observations indicate that the channel length in a TI NR can be a useful control knob for tailored quantum interference oscillations, especially for developing topological hybrid quantum devices.
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Submitted 19 August, 2020;
originally announced August 2020.
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Superconducting Quantum Interference Devices Made of Sb-doped Bi2Se3 Topological Insulator Nanoribbons
Authors:
Nam-Hee Kim,
Hong-Seok Kim,
Yasen Hou,
Dong Yu,
Yong-Joo Doh
Abstract:
We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-…
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We report the fabrication and characterization of superconducting quantum interference devices (SQUIDs) made of Sb-doped Bi2Se3 topological insulator (TI) nanoribbon (NR) contacted with PbIn superconducting electrodes. When an external magnetic field was applied along the NR axis, the TI NR exhibited periodic magneto-conductance oscillations, the so-called Aharonov-Bohm oscillations, owing to one-dimensional subbands. Below the superconducting transition temperature of PbIn electrodes, we observed supercurrent flow through TI NR-based SQUID. The critical current periodically modulates with a magnetic field perpendicular to the SQUID loop, revealing that the periodicity corresponds to the superconducting flux quantum. Our experimental observations can be useful to explore Majorana bound states (MBS) in TI NR, promising for developing topological quantum information devices.
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Submitted 31 January, 2020;
originally announced February 2020.
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Towards searching for Majorana fermions in topological insulator nanowires
Authors:
Hong-Seok Kim,
Yong-Joo Doh
Abstract:
Developing a gate-tunable, scalable, and topologically-protectable supercurrent qubit and integrating it into a quantum circuit are crucial for applications in the fields of quantum information technology and topological phenomena. Here we propose that the nano-hybrid supercurrent transistors, a superconducting quantum analogue of a transistor, made of topological insulator nanowire would be a pro…
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Developing a gate-tunable, scalable, and topologically-protectable supercurrent qubit and integrating it into a quantum circuit are crucial for applications in the fields of quantum information technology and topological phenomena. Here we propose that the nano-hybrid supercurrent transistors, a superconducting quantum analogue of a transistor, made of topological insulator nanowire would be a promising platform for unprecedented control of both the supercurrent magnitude and the current-phase relation by applying a voltage on a gate electrode. We believe that our experimental design will help probing Majorana state in topological insulator nanowire and establishing a solid-state platform for topological supercurrent qubit.
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Submitted 2 May, 2019;
originally announced May 2019.
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Electrical detection of spin-polarized current in topological insulator Bi1.5Sb0.5Te1.7Se1.3
Authors:
Tae-Ha Hwang,
Hong-Seok Kim,
Hoil Kim,
Jun Sung Kim,
Yong-Joo Doh
Abstract:
Spin-momentum locked (SML) topological surface state (TSS) provides exotic properties for spintronics applications. The spin-polarized current, which emerges owing to the SML, can be directly detected by performing spin potentiometric measurement. We observed spin-polarized current using a bulk insulating topological insulator (TI), Bi1.5Sb0.5Te1.7Se1.3, and Co as the ferromagnetic spin probe. The…
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Spin-momentum locked (SML) topological surface state (TSS) provides exotic properties for spintronics applications. The spin-polarized current, which emerges owing to the SML, can be directly detected by performing spin potentiometric measurement. We observed spin-polarized current using a bulk insulating topological insulator (TI), Bi1.5Sb0.5Te1.7Se1.3, and Co as the ferromagnetic spin probe. The spin voltage was probed with varying the bias current, temperature, and gate voltage. Moreover, we observed non-local spin-polarized current, which is regarded as a distinguishing property of TIs. The spin-polarization ratio of the non-local current was larger than that of the local current. These findings could reveal a more accurate approach to determine spin-polarization ratio at the TSS.
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Submitted 6 March, 2019;
originally announced March 2019.
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Nanomechanical characterization of quantum interference in a topological insulator nanowire
Authors:
Minjin Kim,
Jihwan Kim,
Yasen Hou,
Dong Yu,
Yong-Joo Doh,
Bongsoo Kim,
Kun Woo Kim,
Junho Suh
Abstract:
The discovery of two-dimensional gapless Dirac fermions in graphene and topological insulators (TI) has sparked extensive ongoing research toward applications of their unique electronic properties. The gapless surface states in three-dimensional insulators indicate a distinct topological phase of matter with a non-trivial Z2 invariant that can be verified by angle-resolved photoemission spectrosco…
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The discovery of two-dimensional gapless Dirac fermions in graphene and topological insulators (TI) has sparked extensive ongoing research toward applications of their unique electronic properties. The gapless surface states in three-dimensional insulators indicate a distinct topological phase of matter with a non-trivial Z2 invariant that can be verified by angle-resolved photoemission spectroscopy or magnetoresistance quantum oscillation. In TI nanowires, the gapless surface states exhibit Aharonov-Bohm (AB) oscillations in conductance, with this quantum interference effect accompanying a change in the number of transverse one-dimensional modes in transport. Thus, while the density of states (DOS) of such nanowires is expected to show such AB oscillation, this effect has yet to be observed. Here, we adopt nanomechanical measurements that reveal AB oscillations in the DOS of a topological insulator. The TI nanowire under study is an electromechanical resonator embedded in an electrical circuit, and quantum capacitance effects from DOS oscillation modulate the circuit capacitance thereby altering the spring constant to generate mechanical resonant frequency shifts. Detection of the quantum capacitance effects from surface-state DOS is facilitated by the small effective capacitances and high quality factors of nanomechanical resonators, and as such the present technique could be extended to study diverse quantum materials at nanoscale.
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Submitted 7 February, 2019;
originally announced February 2019.
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Conductance Peak Density in Nanowires
Authors:
T. Verçosa,
Yong-Joo Doh,
J. G. G. S. Ramos,
A. L. R. Barbosa
Abstract:
We present a complete numerical calculation and an experimental data analysis of the universal conductance fluctuations in quasi-one-dimension nanowires. The conductance peak density model, introduced in nanodevice research on [Phys. Rev. Lett. 107, 176807 (2011)], is applied successfully to obtain the coherence length of InAs nanowire magnetoconductance and we prove its equivalence with correlati…
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We present a complete numerical calculation and an experimental data analysis of the universal conductance fluctuations in quasi-one-dimension nanowires. The conductance peak density model, introduced in nanodevice research on [Phys. Rev. Lett. 107, 176807 (2011)], is applied successfully to obtain the coherence length of InAs nanowire magnetoconductance and we prove its equivalence with correlation methods. We show the efficiency of the method and therefore a prominent alternative to obtain the phase-coherence length. The peak density model can be similarly applied to spintronic setups, graphene and topological isolator where phase-coherence length is a relevant experimental parameter.
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Submitted 22 September, 2018;
originally announced September 2018.
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Interplay between superconductivity and magnetism in one-unit-cell LaAlO3 capped with SrTiO3
Authors:
Yongsu Kwak,
Woojoo Han,
Thach D. N. Ngo,
Dorj Odkhuu,
Jihwan Kim,
Young Heon Kim,
Noejung Park,
Sonny H. Rhim,
Myung-Hwa Jung,
Junho Suh,
Seung-Bo Shim,
Mahn-Soo Choi,
Yong-Joo Doh,
Joon Sung Lee,
Jonghyun Song,
Jinhee Kim
Abstract:
To form a conducting layer at the interface between the oxide insulators LaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at least four unit-cells-thick. The LaAlO3 SrTiO3 heterointerface thus formed exhibits various intriguing phenomena such as ferromagnetism and superconductivity. It has been widely studied for being a low-dimensional ferromagnetic oxide superconducting system…
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To form a conducting layer at the interface between the oxide insulators LaAlO3 and SrTiO3, the LaAlO3 layer on the SrTiO3 substrate must be at least four unit-cells-thick. The LaAlO3 SrTiO3 heterointerface thus formed exhibits various intriguing phenomena such as ferromagnetism and superconductivity. It has been widely studied for being a low-dimensional ferromagnetic oxide superconducting system with a strong gate-tunable spin-orbit interaction. However, its lack of stability and environmental susceptiveness have been an obstacle to its further experimental investigations and applications. Here, we demonstrate that capping the bilayer with SrTiO3 relieves this thickness limit, while enhancing the stability and controllability of the interface. In addition, the SrTiO3-capped LaAlO3 exhibits unconventional superconductivity; the critical current dramatically increases under a parallel magnetic field, and shows a reversed hysteresis contrary to the conventional hysteresis of magnetoresistance. Its superconducting energy gap of $Δ\sim 1.31k_BT_c$ also deviates from conventional BCS-type superconductivity. The oxide trilayer could be a robust platform for studying the extraordinary interplay of superconductivity and ferromagnetism at the interface electron system between LaAlO3 and SrTiO3.
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Submitted 24 January, 2018;
originally announced January 2018.
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Fabrication and Characterization of Superconducting Quantum Interference Device using (Bi_{1-x}Sb_x)_2Se_3 Topological Insulator Nanoribbons
Authors:
Nam-Hee Kim,
Hong-Seok Kim,
Yiming Yang,
Xingyue Peng,
Dong Yu,
Yong-Joo Doh
Abstract:
We report on the fabrication and electrical transport properties of superconducting quantum interference devices (SQUIDs) made from a (Bi_{1-x}Sb_x)_2Se_3 topological insulator (TI) nanoribbon (NR) connected with Pb0.5In0.5 superconducting electrodes. Below the transition temperature of the superconducting Pb0.5In0.5 electrodes, periodic oscillations of the critical current are observed in the TI…
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We report on the fabrication and electrical transport properties of superconducting quantum interference devices (SQUIDs) made from a (Bi_{1-x}Sb_x)_2Se_3 topological insulator (TI) nanoribbon (NR) connected with Pb0.5In0.5 superconducting electrodes. Below the transition temperature of the superconducting Pb0.5In0.5 electrodes, periodic oscillations of the critical current are observed in the TI NR SQUID under a magnetic field applied perpendicular to the plane owing to flux quantization. Also the output voltage modulates as a function of the external magnetic field. Moreover, the SQUID the SQUID shows a voltage modulation envelope, which is considered to represent the Fraunhofer-like patterns of each single junction. These properties of the TI NR SQUID would provide a useful method to explore Majorana fermions.
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Submitted 23 January, 2018;
originally announced January 2018.
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Zero bias conductance peak in InAs nanowire coupled to superconducting electrodes
Authors:
Nam-Hee Kim,
Yun-Sok Shin,
Hong-Seok Kim,
Jin-Dong Song,
Yong-Joo Doh
Abstract:
We report the occurrence of the zero-bias conductance peak (ZBCP) in an InAs nanowire coupled to PbIn superconductors with varying temperature, bias voltage, and magnetic field. The ZBCP is suppressed with increasing temperature and bias voltage above the Thouless energy of the nanowire. Applying a magnetic field also diminishes the ZBCP when the resultant magnetic flux reaches the magnetic flux q…
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We report the occurrence of the zero-bias conductance peak (ZBCP) in an InAs nanowire coupled to PbIn superconductors with varying temperature, bias voltage, and magnetic field. The ZBCP is suppressed with increasing temperature and bias voltage above the Thouless energy of the nanowire. Applying a magnetic field also diminishes the ZBCP when the resultant magnetic flux reaches the magnetic flux quantum h/2e. Our observations are consistent with theoretical expectations of reflectionless tunneling, in which the phase coherence between an electron and its Andreev-reflected hole induces the ZBCP as long as time-reversal symmetry is preserved.
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Submitted 18 October, 2017; v1 submitted 13 October, 2017;
originally announced October 2017.
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Macroscopic Quantum Tunneling in Superconducting Junctions of β-Ag$_{2}$Se Topological Insulator Nanowire
Authors:
Jihwan Kim,
Bum-Kyu Kim,
Hong-Seok Kim,
Ahreum Hwang,
Bongsoo Kim,
Yong-Joo Doh
Abstract:
We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag$_{2}$Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the…
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We report on the fabrication and electrical transport properties of superconducting junctions made of β-Ag$_{2}$Se topological insulator (TI) nanowires in contact with Al superconducting electrodes. The temperature dependence of the critical current indicates that the superconducting junction belongs to a short and diffusive junction regime. As a characteristic feature of the narrow junction, the critical current decreases monotonously with increasing magnetic field. The stochastic distribution of the switching current exhibits the macroscopic quantum tunneling behavior, which is robust up to T = 0.8 K. Our observations indicate that the TI nanowire-based Josephson junctions can be a promising building block for the development of nanohybrid superconducting quantum bits.
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Submitted 20 August, 2017;
originally announced August 2017.
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Polarity-tunable magnetic tunnel junctions based on ferromagnetism at oxide heterointerfaces
Authors:
Thach D. N. Ngo,
Jung-Won Chang,
Kyujoon Lee,
Seungju Han,
Joon Sung Lee,
Young Heon Kim,
Myung-Hwa Jung,
Yong-Joo Doh,
Mahn-Soo Choi,
Jonghyun Song,
Jinhee Kim
Abstract:
Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However, the manipulation of the spin degree of freedom at the LAO/STO heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions cons…
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Complex oxide systems have attracted considerable attention because of their fascinating properties, including the magnetic ordering at the conducting interface between two band insulators, such as LaAlO3 (LAO) and SrTiO3 (STO). However, the manipulation of the spin degree of freedom at the LAO/STO heterointerface has remained elusive. Here, we have fabricated hybrid magnetic tunnel junctions consisting of Co and LAO/STO ferromagnets with the insertion of a Ti layer in between, which clearly exhibit magnetic switching and the tunnelling magnetoresistance (TMR) effect below 10 K. The magnitude and the of the TMR are strongly dependent on the direction of the rotational magnetic field parallel to the LAO/STO plane, which is attributed to a strong Rashba-type spin orbit coupling in the LAO/STO heterostructure. Our study provides a further support for the existence of the macroscopic ferromagnetism at LAO/STO heterointerfaces and opens a novel route to realize interfacial spintronics devices.
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Submitted 11 July, 2017;
originally announced July 2017.
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Fabrication and Characterization of PbIn-Au-PbIn Superconducting Junctions
Authors:
Nam-Hee Kim,
Bum-Kyu Kim,
Hong-Seok Kim,
Yong-Joo Doh
Abstract:
We report on the fabrication and measurement results of the electrical transport properties of superconductor-normal metal-superconductor (SNS) weak links, made of PbIn superconductor and Au metal. The maximum supercurrent reaches up to ~ 6 μA at T = 2.3 K and the supercurrent persists even at higher temperature of T = 4.7 K. Magnetic field dependence of the critical current is consistent with a t…
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We report on the fabrication and measurement results of the electrical transport properties of superconductor-normal metal-superconductor (SNS) weak links, made of PbIn superconductor and Au metal. The maximum supercurrent reaches up to ~ 6 μA at T = 2.3 K and the supercurrent persists even at higher temperature of T = 4.7 K. Magnetic field dependence of the critical current is consistent with a theoretical fit using the narrow junction model. The superconducting quantum interference device (SQUID) was also fabricated using two PbIn-Au-PbIn junctions connected in parallel. Under perpendicular magnetic field, we clearly observed periodic oscillations of dV/dI with a period of magnetic flux quantum threading into the supercurrent loop of the SQUID. Our fabrication methods would provide an easy and simple way to explore the superconducting proximity effects without ultra-low-temperature cryostats.
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Submitted 20 November, 2016;
originally announced November 2016.
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Very Strong Superconducting Proximity Effects in PbS Semiconductor Nanowires
Authors:
Bum-Kyu Kim,
Hong-Seok Kim,
Yiming Yang,
Xingyue Peng,
Dong Yu,
Yong-Joo Doh
Abstract:
We report the fabrication of strongly coupled nanohybrid superconducting junctions using PbS semiconductor nanowires and Pb0.5In0.5 superconducting electrodes. The maximum supercurrent in the junction reaches up to ~15 μA at 0.3 K, which is the highest value ever observed in semiconductor-nanowire-based superconducting junctions. The observation of microwave-induced constant voltage steps confirms…
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We report the fabrication of strongly coupled nanohybrid superconducting junctions using PbS semiconductor nanowires and Pb0.5In0.5 superconducting electrodes. The maximum supercurrent in the junction reaches up to ~15 μA at 0.3 K, which is the highest value ever observed in semiconductor-nanowire-based superconducting junctions. The observation of microwave-induced constant voltage steps confirms the existence of genuine Josephson coupling through the nanowire. Monotonic suppression of the critical current under an external magnetic field is also in good agreement with the narrow junction model. The temperature-dependent stochastic distribution of the switching current exhibits a crossover from phase diffusion to a thermal activation process as the temperature decreases. These strongly coupled nanohybrid superconducting junctions would be advantageous to the development of gate-tunable superconducting quantum information devices.
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Submitted 25 July, 2016;
originally announced July 2016.
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Switching current distributions in InAs nanowire Josephson junctions
Authors:
Bum-Kyu Kim,
Yong-Joo Doh
Abstract:
We report on the switching current distributions in nano-hybrid Josephson junctions made of InAs semiconductor nanowires. Temperature dependence of the switching current distribution can be understood by motion of Josephson phase particle escaping from a tilted washboard potential, fitted well to the macroscopic quantum tunneling, thermal activation and phase diffusion models, depending on tempera…
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We report on the switching current distributions in nano-hybrid Josephson junctions made of InAs semiconductor nanowires. Temperature dependence of the switching current distribution can be understood by motion of Josephson phase particle escaping from a tilted washboard potential, fitted well to the macroscopic quantum tunneling, thermal activation and phase diffusion models, depending on temperature. Application of gate voltage to tune the Josephson coupling strength enables us to adjust the effective temperature for the escaping process, which would be promising for developing gate-tunable superconducting phase qubits.
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Submitted 10 May, 2016;
originally announced May 2016.
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Quantum electronic transport of topological surface states in beta-Ag2Se nanowire
Authors:
Jihwan Kim,
Ahreum Hwang,
Sang-Hoon Lee,
Seung-Hoon Jhi,
Sunghun Lee,
Yun Chang Park,
Si-in Kim,
Hong-Seok Kim,
Yong-Joo Doh,
Jinhee Kim,
Bongsoo Kim
Abstract:
Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that th…
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Single-crystalline β-Ag2Se nanostructures, a new class of 3D topological insulators (TIs), were synthesized using the chemical vapor transport method. The topological surface states were verified by measuring electronic transport properties including the weak antilocalization effect, Aharonov-Bohm oscillations, and Shubnikov-de Haas oscillations. First-principles band calculations revealed that the band inversion in \b{eta}-Ag2Se is caused by strong spin-orbit coupling and Ag-Se bonding hybridization. These extensive investigations provide new meaningful information about silver-chalcogenide TIs that have anisotropic Dirac cones, which could be useful for spintronics applications.
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Submitted 7 January, 2016;
originally announced January 2016.
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Gate-tunable superconducting quantum interference devices of PbS nanowires
Authors:
Hong-Seok Kim,
Bum-Kyu Kim,
Yiming Yang,
Xingyue Peng,
Soon-Gul Lee,
Dong Yu,
Yong-Joo Doh
Abstract:
We report on the fabrication and electrical transport properties of gate-tunable superconducting quantum interference devices (SQUIDs), made of semiconducting PbS nanowire contacted with PbIn superconducting electrodes. Applied with a magnetic field perpendicular to the plane of the nano-hybrid SQUID, periodic oscillations of the critical current due to the flux quantization in SQUID are observed…
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We report on the fabrication and electrical transport properties of gate-tunable superconducting quantum interference devices (SQUIDs), made of semiconducting PbS nanowire contacted with PbIn superconducting electrodes. Applied with a magnetic field perpendicular to the plane of the nano-hybrid SQUID, periodic oscillations of the critical current due to the flux quantization in SQUID are observed up to T = 4.0 K. Nonsinusoidal current-phase relationship is obtained as a function of temperature and gate voltage, which is consistent with a short and diffusive junction model.
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Submitted 16 November, 2015;
originally announced November 2015.
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Controlled formation of high-mobility shallow electron gases in SrTiO3 single crystal
Authors:
Jung-Won Chang,
Joon Sung Lee,
Tae Ho Lee,
Jinhee Kim,
Yong-Joo Doh
Abstract:
We report controlled formation of sub-100 nm-thin electron channels in SrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm$^2$V$^{-1}$s$^{-1}$), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction,…
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We report controlled formation of sub-100 nm-thin electron channels in SrTiO$_3$ by doping with oxygen vacancies induced by Ar$^+$-ion irradiation. The conducting channels exhibit a consistent high electron mobility (~15,000 cm$^2$V$^{-1}$s$^{-1}$), which enables clear observation of magnetic quantum oscillations, and gate-tunable linear magnetoresistance. Near the onset of electrical conduction, the metal-insulator transition is induced by the mobility suppression. With the high electron mobility and the ease of controlled channel formation, this ion-irradiation doping method may provide an excellent basis for developing oxide electronics.
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Submitted 31 October, 2015;
originally announced November 2015.
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Hot Carrier Trapping Induced Negative Photoconductance in InAs Nanowires toward Novel Nonvolatile Memory
Authors:
Yiming Yang,
Xingyue Peng,
Hong-Seok Kim,
Taeho Kim,
Sanghun Jeon,
Hang Kyu Kang,
Wonjun Choi,
Jindong Song,
Yong-Joo Doh,
Dong Yu
Abstract:
We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength dependent photoconductance measurements. Sca…
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We report a novel negative photoconductivity (NPC) mechanism in n-type indium arsenide nanowires (NWs). Photoexcitation significantly suppresses the conductivity with a gain up to 10^5. The origin of NPC is attributed to the depletion of conduction channels by light assisted hot electron trapping, supported by gate voltage threshold shift and wavelength dependent photoconductance measurements. Scanning photocurrent microscopy excludes the possibility that NPC originates from the NW/metal contacts and reveals a competing positive photoconductivity. The conductivity recovery after illumination substantially slows down at low temperature, indicating a thermally activated detrapping mechanism. At 78 K, the spontaneous recovery of the conductance is completely quenched, resulting in a reversible memory device which can be switched by light and gate voltage pulses. The novel NPC based optoelectronics may find exciting applications in photodetection and nonvolatile memory with low power consumption.
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Submitted 31 October, 2015;
originally announced November 2015.
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Quantum interference effects in chemical vapor deposited graphene
Authors:
Nam-Hee Kim,
Yun-Sok Shin,
Serin Park,
Hong-Seok Kim,
Jun Sung Lee,
Chi Won Ahn,
Jeong-O Lee,
Yong-Joo Doh
Abstract:
We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the micropo…
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We report several quantum interference effects in graphene grown by chemical vapor deposition. A crossover between weak localization and weak antilocalization effects is observed when varying the gate voltage and we discuss the underlying scattering mechanisms. The characteristic length scale for phase coherence is compared with that estimated from universal conductance fluctuations in the microporeformed graphene sample. These extensive temperature- and gate-dependent measurements of the intervalley and intravalley scattering lengths provide important and useful insight for the macroscopic applications of graphene-based quantum devices.
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Submitted 31 October, 2015;
originally announced November 2015.
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Quantum electrical transport properties of topological insulator Bi2Te3 nanowires
Authors:
Hong-Seok Kim,
Ho Sun Shin,
Joon Sung Lee,
Chi Won Ahn,
Jae Yong Song,
Yong-Joo Doh
Abstract:
We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibi…
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We investigate the quantum transport properties of surface electrons on a topological insulator Bi2Te3 nanowire in a magnetotransport study. Although the nanowires are synthesized by using a relatively coarse method of electrochemical deposition, clear Aharonov-Bohm oscillations of phases 0 and pi are observed, owing to the highly coherent surface electron channel. The oscillation amplitude exhibits exponential temperature dependence, suggesting that the phase coherence length L_phi is inversely proportional to the temperature, as in quasi-ballistic systems. In addition, a weak antilocalization analysis on the surface channel by using a one-dimensional localization theory, enabled by successful extraction of the surface contribution from the magnetoconductance data, is provided in support of the temperature dependence of L_phi.
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Submitted 31 October, 2015;
originally announced November 2015.
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Electrically Tunable Macroscopic Quantum Tunneling in a Graphene-based Josephson Junction
Authors:
Gil-Ho Lee,
Dongchan Jeong,
Jae-Hyun Choi,
Yong-Joo Doh,
Hu-Jong Lee
Abstract:
Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures. Microwave spectroscopy measurements indicate a multi-photon absorption process occurring via discrete energy levels in washboard potential well. The crossover…
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Stochastic switching-current distribution in a graphene-based Josephson junction exhibits a crossover from the classical to quantum regime, revealing the macroscopic quantum tunneling (MQT) of a Josephson phase particle at low temperatures. Microwave spectroscopy measurements indicate a multi-photon absorption process occurring via discrete energy levels in washboard potential well. The crossover temperature for MQT and the quantized level spacing are controlled with the gate voltage, implying its potential application to gate-tunable superconducting quantum bits.
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Submitted 1 September, 2011;
originally announced September 2011.
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Absence of Tunneling Character in c-axis Transport of SmFeAsO0.85 Single Crystals
Authors:
Jae-Hyun Park,
Hyun-Sook Lee,
Hu-Jong Lee,
B. K. Cho,
Yong-Joo Doh
Abstract:
We made electrical transport measurements along the c-axis of SmFeAsO0.85 single crystals, in both three- and four-terminal configurations, focusing on examining the possible formation of Josephson coupling between FeAs superconducting layers. Anisotropic bulk superconductivity was observed along the c-axis, but without Josephson coupling, as confirmed by the absence of both the hysteresis in curr…
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We made electrical transport measurements along the c-axis of SmFeAsO0.85 single crystals, in both three- and four-terminal configurations, focusing on examining the possible formation of Josephson coupling between FeAs superconducting layers. Anisotropic bulk superconductivity was observed along the c-axis, but without Josephson coupling, as confirmed by the absence of both the hysteresis in current-voltage curves and the modulation of the critical current by the in-plane magnetic fields. The variation of the critical currents for different magnetic-field directions gives the anisotropy ratio of 5. This three-dimensional electronic structure of our iron pnictide superconductors is in clear contrast to the two-dimensional one observed in the cuprate superconductors, another stacked superconducting system.
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Submitted 22 February, 2011;
originally announced February 2011.
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Above-gap Conductance Anomaly Studied in Superconductor-graphene-superconductor Josephson Junctions
Authors:
Jae-Hyun Choi,
Hu-Jong Lee,
Yong-Joo Doh
Abstract:
We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through the graphene, sub-gap structure of differential conductance due to Andreev reflection, and periodic modulation of the critical current Ic with perpendicular ma…
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We investigated the electrical transport properties of superconductor-graphene-superconductor (SGS) Josephson junctions. In low voltage bias, we observed conventional proximity-coupled Josephson effect, such as the supercurrent flow through the graphene, sub-gap structure of differential conductance due to Andreev reflection, and periodic modulation of the critical current Ic with perpendicular magnetic field H to the graphene. In high bias above the superconducting gap voltage, however, we also observed an anomalous jump of the differential conductance, the voltage position of which is sensitive to the backgate voltage Vg. Our extensive study with varying Vg, temperature, and H reveals that the above-gap structure takes place at a characteristic power P*, which is irrespective of Vg for a given junction. Temperature and H dependences of P* are well explained by the increase of the electron temperature in graphene.
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Submitted 21 February, 2011;
originally announced February 2011.
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Superconducting junction of a single-crystalline Au nanowire for an ideal Josephson device
Authors:
Minkyung Jung,
Hyunho Noh,
Yong-Joo Doh,
Woon Song,
Yonuk Chong,
Mahn-Soo Choi,
Youngdong Yoo,
Kwanyong Seo,
Nam Kim,
Byung-Chill Woo,
Bongsoo Kim,
Jinhee Kim
Abstract:
We report on the fabrication and measurements of a superconducting junction of a single-crystalline Au nanowire, connected to Al electrodes. Current-Voltage characteristic curve shows clear supercurrent branch below the superconducting transition temperature of Al and quantized voltage plateaus on application of microwave radiation, as expected from Josephson relations. Highly transparent (0.95) c…
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We report on the fabrication and measurements of a superconducting junction of a single-crystalline Au nanowire, connected to Al electrodes. Current-Voltage characteristic curve shows clear supercurrent branch below the superconducting transition temperature of Al and quantized voltage plateaus on application of microwave radiation, as expected from Josephson relations. Highly transparent (0.95) contacts very close to an ideal limit of 1 are formed at the interface between the normal metal (Au) and the superconductor (Al). The very high transparency is ascribed to the single crystallinity of a Au nanowire and the formation of an oxide-free contact between Au and Al. The sub-gap structures of the differential conductance are well explained by coherent multiple Andreev reflections (MAR), the hallmark of mesoscopic Josephson junctions. These observations demonstrate that single crystalline Au nanowires can be employed to develop novel quantum devices utilizing coherent electrical transport.
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Submitted 21 February, 2011;
originally announced February 2011.
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Observation of Supercurrent in PbIn-Graphene-PbIn Josephson Junction
Authors:
Dongchan Jeong,
Jae-Hyun Choi,
Gil-Ho Lee,
Sanghyun Jo,
Yong-Joo Doh,
Hu-Jong Lee
Abstract:
Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255…
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Superconductor-graphene-superconductor (SGS) junction provides a unique platform to study relativistic electrodynamics of Dirac fermions combined with proximity-induced superconductivity. We report observation of the Josephson effect in proximity-coupled superconducting junctions of graphene in contact with Pb1-xInx (x=0.07) electrodes for temperatures as high as T = 4.8K, with a large IcRn (~ 255 microV). This demonstrates that Pb1-xInx SGS junction would facilitate the development of the superconducting quantum information devices and superconductor-enhanced phase-coherent transport of graphene.
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Submitted 29 January, 2011;
originally announced January 2011.
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Nonvolatile memory effects in hybrid devices of few-layer graphene and ferroelectric polymer films
Authors:
Yong-Joo Doh,
Gyu-Chul Yi
Abstract:
We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance changes were observed under floating conditions, which were dependent on the back gate voltage applied beforehand. Nonvolatile memory functionality in the hybr…
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We report on the fabrication and electrical characterization of few-layer graphene (FLG) devices coated with a ferroelectric polymer layer of poly(vinylidene fluoride/trifluoroethylene) [P(VDF/TrFE)]. Highly stable and reliable resistance changes were observed under floating conditions, which were dependent on the back gate voltage applied beforehand. Nonvolatile memory functionality in the hybrid FLG-P(VDF/TrFE) devices is attributed to a remanent electric field induced by the ferroelectric polarization of the P(VDF/TrFE) layer.
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Submitted 15 April, 2009;
originally announced April 2009.
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Electrically Driven Light Emission from Individual CdSe Nanowires
Authors:
Yong-Joo Doh,
Kristin N. Maher,
Lian Ouyang,
Chun L. Yu,
Hongkun Park,
Jiwoong Park
Abstract:
We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near t…
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We report electroluminescence (EL) measurements carried out on three-terminal devices incorporating individual n-type CdSe nanowires. Simultaneous optical and electrical measurements reveal that EL occurs near the contact between the nanowire and a positively biased electrode or drain. The surface potential profile, obtained by using Kelvin probe microscopy, shows an abrupt potential drop near the position of the EL spot, while the band profile obtained from scanning photocurrent microscopy indicates the existence of an n-type Schottky barrier at the interface. These observations indicate that light emission occurs through a hole leakage or an inelastic scattering induced by the rapid potential drop at the nanowire-electrode interface.
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Submitted 19 September, 2008;
originally announced September 2008.
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Andreev reflection versus Coulomb blockade in hybrid semiconductor nanowire devices
Authors:
Yong-Joo Doh,
Silvano De Franceschi,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven
Abstract:
Semiconductor nanowires provide promising low-dimensional systems for the study of quantum transport phenomena in combination with superconductivity. Here we investigate the competition between the Coulomb blockade effect, Andreev reflection, and quantum interference, in InAs and InP nanowires connected to aluminum-based superconducting electrodes. We compare three limiting cases depending on th…
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Semiconductor nanowires provide promising low-dimensional systems for the study of quantum transport phenomena in combination with superconductivity. Here we investigate the competition between the Coulomb blockade effect, Andreev reflection, and quantum interference, in InAs and InP nanowires connected to aluminum-based superconducting electrodes. We compare three limiting cases depending on the tunnel coupling strength and the characteristic Coulomb interaction energy. For weak coupling and large charging energy, negative differential conductance is observed as a direct consequence of the BCS density of states in the leads. For intermediate coupling and charging energy smaller than the superconducting gap, the current-voltage characteristic is dominated by Andreev reflection and Coulomb blockade produces an effect only near zero bias. For almost ideal contact transparencies and negligible charging energy, we observe universal conductance fluctuations whose amplitude is enhanced due to Andreev reflection at the contacts.
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Submitted 22 May, 2008;
originally announced May 2008.
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Quantum Interference Effects in InAs Semiconductor Nanowires
Authors:
Yong-Joo Doh,
Aarnoud L. Roest,
Erik P. A. M. Bakkers,
Silvano De Franceschi,
Leo P. Kouwenhoven
Abstract:
We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the super…
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We report quantum interference effects in InAs semiconductor nanowires strongly coupled to superconducting electrodes. In the normal state, universal conductance fluctuations are investigated as a function of magnetic field, temperature, bias and gate voltage. The results are found to be in good agreement with theoretical predictions for weakly disordered one-dimensional conductors. In the superconducting state, the fluctuation amplitude is enhanced by a factor up to ~ 1.6, which is attributed to a doubling of charge transport via Andreev reflection. At a temperature of 4.2 K, well above the Thouless temperature, conductance fluctuations are almost entirely suppressed, and the nanowire conductance exhibits anomalous quantization in steps of e^{2}/h.
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Submitted 28 December, 2007;
originally announced December 2007.
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Tunable Supercurrent Through Semiconductor Nanowires
Authors:
Yong-Joo Doh,
Jorden A. van Dam,
Aarnoud L. Roest,
Erik P. A. M. Bakkers,
Leo P. Kouwenhoven,
Silvano De Franceschi
Abstract:
Nanoscale superconductor-semiconductor hybrid devices are assembled from InAs semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 K, the high transparency of the contacts gives rise to proximity-induced superconductivity. The nanowires form superconducting weak links operating as mesoscopic Josephson junctions with electrically tunable coupling. Th…
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Nanoscale superconductor-semiconductor hybrid devices are assembled from InAs semiconductor nanowires individually contacted by aluminum-based superconductor electrodes. Below 1 K, the high transparency of the contacts gives rise to proximity-induced superconductivity. The nanowires form superconducting weak links operating as mesoscopic Josephson junctions with electrically tunable coupling. The supercurrent can be switched on/off by a gate voltage acting on the electron density in the nanowire. A variation in gate voltage induces universal fluctuations in the normal-state conductance which are clearly correlated to critical current fluctuations. The ac Josephson effect gives rise to Shapiro steps in the voltage-current characteristic under microwave irradiation.
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Submitted 23 August, 2005;
originally announced August 2005.
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Proximity Effect in Nb/Au/CoFe Trilayers
Authors:
Jinho Kim,
Yong-Joo Doh,
K. Char,
Hyeonjin Doh,
Han-Yong Choi
Abstract:
We have investigated the superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of Au and CoFe thicknesses. Without the CoFe layer the superconducting critical temperatures of Nb/Au bilayers as a function of Au thickness follow the well-known proximity effect between a superconductor and a normal metal. The superconducting critical temperatures of Nb/Au/CoFe trilayers as a f…
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We have investigated the superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of Au and CoFe thicknesses. Without the CoFe layer the superconducting critical temperatures of Nb/Au bilayers as a function of Au thickness follow the well-known proximity effect between a superconductor and a normal metal. The superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of Au thickness exhibit a rapid initial increase in the small Au thickness region and increase slowly to a limiting value above this region, accompanied by a small oscillation of Tc. On the other hand, the superconducting critical temperatures of Nb/Au/CoFe trilayers as a function of CoFe thickness show non-monotonic behavior with a shallow dip feature. We analyzed the Tc behavior in terms of Usadel formalism and found that most features are consistent with the theory, although the small oscillation of Tc as a function of the Au thickness cannot be accounted for. We have also found quantitative values for the two interfaces: Nb/Au and Au/CoFe.
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Submitted 21 April, 2005;
originally announced April 2005.
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The resistance anomaly in the surface layer of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ single crystals under radio-frequency irradiation
Authors:
Nam Kim,
Hyun-Sik Chang,
Hu-Jong Lee,
Yong-Joo Doh
Abstract:
We observed that radio-frequency (rf) irradiation significantly enhances the $c$-axis resistance near and below the superconducting transition of the CuO$_{2}$ layer in contact with a normal-metal electrode on the surface of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ single crystals. We attribute the resistance anomaly to the rf-induced charge-imbalance nonequilibrium effect in the surface CuO$_{2}$ la…
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We observed that radio-frequency (rf) irradiation significantly enhances the $c$-axis resistance near and below the superconducting transition of the CuO$_{2}$ layer in contact with a normal-metal electrode on the surface of Bi$_{2}$Sr$_{2}$CaCu$_{2}$O$_{8+x}$ single crystals. We attribute the resistance anomaly to the rf-induced charge-imbalance nonequilibrium effect in the surface CuO$_{2}$ layer. The relaxation of the charge-imbalance in this highly anisotropic system is impeded by the slow quasiparticle recombination rate, which results in the observed excessive resistance.
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Submitted 20 March, 2000;
originally announced March 2000.
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Microwave-induced constant voltage steps in surface junctions of Bi_{2}Sr_{2}CaCu_{2}O_{8+δ} single crystals
Authors:
Yong-Joo Doh,
Jinhee Kim,
Kyu-Tae Kim,
Hu-Jong Lee
Abstract:
We have observed the zero-crossing steps in a surface junction of a mesa structure micro-fabricated on the surface of a Bi-2212 single crystal. With the application of microwave of frequencies 76 and 94 GHz, the current-voltage characteristics show clear voltage steps satisfying the ac Josephson relation. Increasing the microwave power, the heights of the steps show the Bessel-function behavior…
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We have observed the zero-crossing steps in a surface junction of a mesa structure micro-fabricated on the surface of a Bi-2212 single crystal. With the application of microwave of frequencies 76 and 94 GHz, the current-voltage characteristics show clear voltage steps satisfying the ac Josephson relation. Increasing the microwave power, the heights of the steps show the Bessel-function behavior up to step number n=4. We confirm that the intrinsic surface junction meets the criterion for the observation of zero-crossing steps.
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Submitted 30 August, 1999;
originally announced August 1999.
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Progressive evolution of tunneling characteristics of in-situ fabricated intrinsic Josephson junctions in Bi_2Sr_2CaCu_2O_{8+delta} single crystals
Authors:
Yong-Joo Doh,
Hu-Jong Lee,
Hyun-Sik Chang
Abstract:
Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its tunneling characteristics were measured in-situ in a vacuum chamber for temperatures down to ~13 K. Using this in-situ etching/measurements technique in a sing…
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Stacks of a few intrinsic tunnel junctions were micro-fabricated on the surface of Bi-2212 single crystals. The number of junctions in a stack was tailored by progressively increasing the height of the stack by ion-beam etching, while its tunneling characteristics were measured in-situ in a vacuum chamber for temperatures down to ~13 K. Using this in-situ etching/measurements technique in a single piece of crystal, we systematically excluded any spurious effects arising from variations in the junction parameters and made clear analysis on the following properties of the surface and inner conducting planes. First, the tunneling resistance and the current-voltage curves are scaled by the surface junction resistance. Second, we confirm that the reduction in both the gap and the superconducting transition temperature of the surface conducting plane in contact with a normal metal is not caused by the variation in the doping level, but is caused by the proximity contact. Finally, the main feature of a junction is not affected by the presence of other junctions in a stack in a low bias region.
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Submitted 18 July, 1999;
originally announced July 1999.
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Suppressed Superconductivity of the Surface Conduction Layer in Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ Single Crystals Probed by {\it c}-Axis Tunneling Measurements
Authors:
Nam Kim,
Yong Joo Doh,
Hyun-Sik Chang,
Hu-Jong Lee
Abstract:
We fabricated small-size stacks on the surface of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO-2212) single crystals with the bulk transition temperature $T_c$$\simeq$90 K, each containing a few intrinsic Josephson junctions. Below a critical temperature $T_c'$ ($\ll$ $T_c$), we have observed a weakened Josephson coupling between the CuO$_2$ superconducting double layer at the crystal surface and the ad…
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We fabricated small-size stacks on the surface of Bi$_2$Sr$_2$CaCu$_2$O$_{8+x}$ (BSCCO-2212) single crystals with the bulk transition temperature $T_c$$\simeq$90 K, each containing a few intrinsic Josephson junctions. Below a critical temperature $T_c'$ ($\ll$ $T_c$), we have observed a weakened Josephson coupling between the CuO$_2$ superconducting double layer at the crystal surface and the adjacent one located deeper inside a stack. The quasiparticle branch in the $IV$ data of the weakened Josephson junction (WJJ) fits well to the tunneling characteristics of a d-wave superconductor($'$)/insulator/d-wave superconductor (D$'$ID) junction. Also, the tunneling resistance in the range $T_c'$$<$$T$$<$$T_c$ agrees well with the tunneling in a normal metal/insulator/d-wave superconductor (NID) junction. In spite of the suppressed superconductivity at the surface layer the symmetry of the order parameter appears to remain unaffected.
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Submitted 10 August, 1998;
originally announced August 1998.
