Showing 1–31 of 31 results for author: Dobrowolska, M

Topological response of the anomalous Hall effect in MnBi2Te4 due to magnetic canting

Authors: S. -K. Bac, K. Koller, F. Lux, J. Wang, L. Riney, K. Borisiak, W. Powers, M. Zhukovskyi, T. Orlova, M. Dobrowolska, J. K. Furdyna, N. R. Dilley, L. P. Rokhinson, Y. Mokrousov, R. J. McQueeney, O. Heinonen, X. Liu, B. A. Assaf

Abstract: Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecul… ▽ More Three-dimensional (3D) compensated MnBi2Te4 is antiferromagnetic, but undergoes a spin-flop transition at intermediate fields, resulting in a canted phase before saturation. In this work, we experimentally show that the anomalous Hall effect (AHE) in MnBi2Te4 originates from a topological response that is sensitive to the perpendicular magnetic moment and to its canting angle. Synthesis by molecular beam epitaxy allows us to obtain a large-area quasi-3D 24-layer MnBi2Te4 with near-perfect compensation that hosts the phase diagram observed in bulk which we utilize to probe the AHE. This AHE is seen to exhibit an antiferromagnetic response at low magnetic fields, and a clear evolution at intermediate fields through surface and bulk spin-flop transitions into saturation. Throughout this evolution, the AHE is super-linear versus magnetization rather than the expected linear relationship. We reveal that this discrepancy is related to the canting angle, consistent with the symmetry of the crystal. Our findings suggests that novel topological responses may be found in non-collinear ferromagnetic, and antiferromagnetic phases. △ Less

Submitted 20 April, 2022; v1 submitted 29 March, 2021; originally announced March 2021.

Journal ref: npj Quantum Materials 7 46 (2022)

Introduction of Sr into Bi2Se3 thin films by molecular beam epitaxy

Authors: L. Riney, C. Bunker, S. -K. Bac, J. Wang, D. Battaglia, Yun Chang Park, M. Dobrowolska, J. K. Furdyna, X. Liu, B. A. Assaf

Abstract: SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the s… ▽ More SrxBi2Se3 is a candidate topological superconductor but its superconductivity requires the intercalation of Sr by into the van-der-Waals gaps of Bi2Se3. We report the synthesis of SrxBi2Se3 thin films by molecular beam epitaxy, and we characterize their structural, vibrational and electrical properties. X-ray diffraction and Raman spectroscopy show evidence of substitutional Sr alloying into the structure, while transport measurements allow us to correlate the increasing Sr content with an increased n-type doping, but do not reveal superconductivity down to 1.5K. Our results suggest that Sr predominantly occupies sites within a quintuple layer, simultaneously substituting for Bi and as an interstitial. Our results motivate future density functional studies to further investigate the energetics of Sr substitution into Bi2Se3. △ Less

Submitted 25 November, 2020; originally announced November 2020.

Weak antilocalization beyond the fully diffusive regime in Pb1-xSnxSe topological quantum wells

Authors: Jiashu Wang, X. Liu, C. Bunker, L. Riney, B. Qing, S. K. Bac, M. Zhukovskyi, T. Orlova, S. Rouvimov, M. Dobrowolska, J. K. Furdyna, B. A. Assaf

Abstract: We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and b… ▽ More We report the measurements and analysis of weak antilocalization (WAL) in Pb1-xSnxSe topological quantum wells in a new regime where the elastic scattering length is larger than the magnetic length. We achieve this regime through the development of high-quality epitaxy and doping of topological crystalline insulator (TCI) quantum wells. We obtain elastic scattering lengths that exceeds 100nm and become comparable to the magnetic length. In this transport regime, the Hikami-Larkin-Nagaoka model is no longer valid. We employ the model of Wittmann and Schmid to extract the coherence time from the magnetoresistance. We find that despite our improved transport characteristics, the coherence time may be limited by scattering channels that are not strongly carrier dependent, such as electron-phonon or defect scattering. △ Less

Submitted 5 October, 2020; originally announced October 2020.

Comments: Accepted PRB

Ultrafast Terahertz Conductivity Probes of Topologically Enhanced Surface Transport Driven by Mid-Infrared Laser Pulses in Bi$_2$Se$_3$

Authors: L. Luo, X. Yang, X. Liu, Z. Liu, C. Vaswani, D. Cheng, M. Mootz, I. E. Perakis, M. Dobrowolska, J. K. Furdyna, J. Wang

Abstract: The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a challenge remains on how to isolate and disentangle helical spin transport on the surface from bulk conduction. Here we show that selective midinfrared femtosecond p… ▽ More The recent discovery of topology-protected charge transport of ultimate thinness on surfaces of three-dimensional topological insulators (TIs) are breaking new ground in fundamental quantum science and transformative technology. Yet a challenge remains on how to isolate and disentangle helical spin transport on the surface from bulk conduction. Here we show that selective midinfrared femtosecond photoexcitation of exclusive intraband electronic transitions at low temperature underpins topological enhancement of terahertz (THz) surface transport in doped Bi2Se3, with no complication from interband excitations or need for controlled doping. The unique, hot electron state is characterized by conserved populations of surface/bulk bands and by frequency-dependent hot carrier cooling times that directly distinguish the faster surface channel than the bulk. We determine the topological enhancement ratio between bulk and surface scattering rates, i.e., $γ_\text{BS}/γ_\text{SS}\sim$3.80 in equilibrium. These behaviors are absent at elevated lattice temperatures and for high pumpphoton frequencies and uences. The selective, mid-infrared-induced THz conductivity provides a new paradigm to characterize TIs and may apply to emerging topological semimetals in order to separate the transport connected with the Weyl nodes from other bulk bands. △ Less

Submitted 9 May, 2018; originally announced May 2018.

Comments: Paper in review

Journal ref: Nature Communications, 10, 607 (2019)

MBE growth of 2H-MoTe2 and 1T'-MoTe2 on 3D substrates

Authors: Suresh Vishwanath, Aditya Sundar, Xinyu Liu, Angelica Azcatl, Edward Lochocki, Arthur R. Woll, Sergei Rouvimov, Wan Sik Hwang, Ning Lu, Xin Peng, Huai-Hsun Lien, John Weisenberger, Stephen McDonnell, Moon J. Kim, Margaret Dobrowolska, Jacek K Furdyna, Kyle Shen, Robert M. Wallace, Debdeep Jena, Huili Grace Xing

Abstract: MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibriu… ▽ More MoTe2 is the least explored material in the Molybdenum-chalcogen family, which crystallizes in thermodynamically stable semiconducting 2H phase at \textless 500 C and 1T' metallic phase at higher temperatures. Molecular beam epitaxy (MBE) provides an unique opportunity to tackle the small electronegativity difference between Mo and Te while growing layer by layer away from thermodynamic equilibrium. For a few-layer MoTe2 grown at a moderate rate of $\sim$6 mins per monolayer under varied Te:Mo flux ratio and substrate temperature, the boundary between the 2 phases in MBE grown MoTe2 on CaF2 is characterized using Reflection high-energy electron diffraction (RHEED), Raman spectroscopy and X-ray photoemission spectroscopy (XPS). Grazing incidence X-ray diffraction (GI-XRD) reveals a grain size of $\sim$90 Å and presence of twinned grains. XRD, transmission electron miscroscopy, RHEED, low energy electron diffraction along with lack of electrical conductivity modulation by field effect in MBE 2H-MoTe2 on GaAs (111) B show likelihood of excess Te incorporation in the films. Finally, thermal stability and air sensitivity of MBE 2H-MoTe2 is investigated by temperature dependent XRD and XPS, respectively. △ Less

Submitted 1 May, 2017; originally announced May 2017.

Comments: Six figure in main tex, 8 figures in SI and 4 tables in main text

Bimodal molecular mass distribution in surfactant-free emulsion polymerization as a consequence of coagulative nucleation

Authors: Marta Dobrowolska, Ger J. M. Koper

Abstract: It is demonstrated that the often observed broadness of the molecular weight distribution obtained from latex particles synthesized by means of surfactant-free emulsion polymerization results from the multistage kinetics. The initial stage of the polymerization, by which the primary particles are formed, is of the 01-kind which means that it can be assumed that the particles are so small that at a… ▽ More It is demonstrated that the often observed broadness of the molecular weight distribution obtained from latex particles synthesized by means of surfactant-free emulsion polymerization results from the multistage kinetics. The initial stage of the polymerization, by which the primary particles are formed, is of the 01-kind which means that it can be assumed that the particles are so small that at any moment of time there is no more than one radical chain per particle. After the aggregation of primary particles into secondary particles, the so called coagulative nucleation step, the polymerization kinetics in the subsequently coalesced secondary particles is of the pseudo-bulk kind which means that there are so many radicals in the particles that the polymerization process proceeds as in bulk. The important consequence is that the molecular weight of the 01-process is about one order of magnitude larger than that of the pseudo-bulk process. Hence, each of these polymerization modes and the aggregation stage in-between leave their traces in the molecular weight distribution as is shown by experiments aimed at prolonging the initial formation kinetics. Bimodal molecular weight distributions are found both for ionic and non-ionic initiators. △ Less

Submitted 31 March, 2017; originally announced April 2017.

Observation of oscillatory relaxation in the Sn-terminated surface of epitaxial rock-salt SnSe $\{111\}$ topological crystalline insulator

Authors: Wencan Jin, Suresh Vishwanath, Jianpeng Liu, Lingyuan Kong, Rui Lou, Zhongwei Dai, Jerzy T. Sadowski, Xinyu Liu, Huai-Hsun Lien, Alexander Chaney, Yimo Han, Micheal Cao, Junzhang Ma, Tian Qian, Jerry I. Dadap, Shancai Wang, Malgorzata Dobrowolska, Jacek Furdyna, David A. Muller, Karsten Pohl, Hong Ding, Huili Grace Xing, Richard M. Osgood, Jr

Abstract: Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density fu… ▽ More Topological crystalline insulators have been recently predicted and observed in rock-salt structure SnSe $\{111\}$ thin films. Previous studies have suggested that the Se-terminated surface of this thin film with hydrogen passivation, has a reduced surface energy and is thus a preferred configuration. In this paper, synchrotron-based angle-resolved photoemission spectroscopy, along with density functional theory calculations, are used to demonstrate conclusively that a rock-salt SnSe $\{111\}$ thin film epitaxially-grown on \ce{Bi2Se3} has a stable Sn-terminated surface. These observations are supported by low energy electron diffraction (LEED) intensity-voltage measurements and dynamical LEED calculations, which further show that the Sn-terminated SnSe $\{111\}$ thin film has undergone a surface structural relaxation of the interlayer spacing between the Sn and Se atomic planes. In sharp contrast to the Se-terminated counterpart, the observed Dirac surface state in the Sn-terminated SnSe $\{111\}$ thin film is shown to yield a high Fermi velocity, $0.50\times10^6$m/s, which suggests a potential mechanism of engineering the Dirac surface state of topological materials by tuning the surface configuration. △ Less

Submitted 10 April, 2017; originally announced April 2017.

Comments: 12 pages, 13 figures, supplementary materials included

Journal ref: Phys. Rev. X 7, 041020 (2017)

Probing and controlling terahertz-driven structural dynamics with surface sensitivity

Authors: P. Bowlan, J. Bowlan, S. A. Trugman, R. Valdes Aguilar, J. Qi, X. Liu, J. Furdyna, M. Dobrowolska, A. J. Taylor, D. A. Yarotski, R. P. Prasankumar

Abstract: Intense, single-cycle terahertz (THz) pulses offer a promising approach for understanding and controlling the properties of a material on an ultrafast time scale. In particular, resonantly exciting phonons leads to a better understanding of how they couple to other degrees of freedom in the material (e.g., ferroelectricity, conductivity and magnetism) while enabling coherent control of lattice vib… ▽ More Intense, single-cycle terahertz (THz) pulses offer a promising approach for understanding and controlling the properties of a material on an ultrafast time scale. In particular, resonantly exciting phonons leads to a better understanding of how they couple to other degrees of freedom in the material (e.g., ferroelectricity, conductivity and magnetism) while enabling coherent control of lattice vibrations and the symmetry changes associated with them. However, an ultrafast method for observing the resulting structural changes at the atomic scale is essential for studying phonon dynamics. A simple approach for doing this is optical second harmonic generation (SHG), a technique with remarkable sensitivity to crystalline symmetry in the bulk of a material as well as at surfaces and interfaces. This makes SHG an ideal method for probing phonon dynamics in topological insulators (TI), materials with unique surface transport properties. Here, we resonantly excite a polar phonon mode in the canonical TI Bi$_2$Se$_3$ with intense THz pulses and probe the subsequent response with SHG. This enables us to separate the photoinduced lattice dynamics at the surface from transient inversion symmetry breaking in the bulk. Furthermore, we coherently control the phonon oscillations by varying the time delay between a pair of driving THz pulses. Our work thus demonstrates a versatile, table-top tool for probing and controlling ultrafast phonon dynamics in materials, particularly at surfaces and interfaces, such as that between a TI and a magnetic material, where exotic new states of matter are predicted to exist. △ Less

Submitted 4 October, 2016; originally announced October 2016.

Signatures of four-particle correlations associated with exciton-carrier interactions in coherent spectroscopy on bulk GaAs

Authors: D. Webber, B. L. Wilmer, X. Liu, M. Dobrowolska, J. K. Furdyna, A. D. Bristow, K. C. Hall

Abstract: Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission… ▽ More Transient four-wave mixing studies of bulk GaAs under conditions of broad bandwidth excitation of primarily interband transitions have enabled four-particle correlations tied to degenerate (exciton-exciton) and nondegenerate (exciton-carrier) interactions to be studied. Real two-dimensional Fourier-transform spectroscopy (2DFTS) spectra reveal a complex response at the heavy-hole exciton emission energy that varies with the absorption energy, ranging from dispersive on the diagonal, through absorptive for low-energy interband transitions to dispersive with the opposite sign for interband transitions high above band gap. Simulations using a multilevel model augmented by many-body effects provide excellent agreement with the 2DFTS experiments and indicate that excitation-induced dephasing (EID) and excitation-induced shift (EIS) affect degenerate and nondegenerate interactions equivalently, with stronger exciton-carrier coupling relative to exciton-exciton coupling by approximately an order of magnitude. These simulations also indicate that EID effects are three times stronger than EIS in contributing to the coherent response of the semiconductor. △ Less

Submitted 20 May, 2016; originally announced May 2016.

Journal ref: Phys. Rev. B 94, 155450 (2016)

Four-wave mixing in perovskite photovoltaic materials reveals long dephasing times and weaker many-body interactions than GaAs

Authors: Samuel A. March, Drew B. Riley, Charlotte Clegg, Daniel Webber, Xinyu Liu, Margaret Dobrowolska, Jacek K. Furdyna, Ian G. Hill, Kimberley C. Hall

Abstract: Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in… ▽ More Perovksite semiconductors have shown promise for low-cost solar cells, lasers and photodetectors, yet their fundamental photophysical properties are not well understood. Recent observations of a low ($\sim$few meV) exciton binding energy and evidence of hot phonon effects in the room temperature phase suggest that perovskites are much closer to inorganic semiconductors than the absorber layers in traditional organic photovoltaics, signaling the need for experiments that shed light on the placement of perovskite materials within the spectrum of semiconductors used in optoelectronics and photovoltaics. Here we use four-wave mixing (FWM) to contrast the coherent optical response of CH$_3$NH$_3$PbI$_3$ thin films and crystalline GaAs. At carrier densities relevant for solar cell operation, our results show that carriers interact surprisingly weakly via the Coulomb interaction in perovskite, much weaker than in inorganic semiconductors. These weak many-body effects lead to a dephasing time in CH$_3$NH$_3$PbI$_3$ $\sim$3 times longer than in GaAs. Our results also show that the strong enhancement of the exciton FWM signal tied to excitation-induced dephasing in GaAs and other III-V semiconductors does not occur in perovskite due to weak exciton-carrier scattering interactions. △ Less

Submitted 22 September, 2016; v1 submitted 16 February, 2016; originally announced February 2016.

Comments: Added 10 K results to previous version (Feb 16, 2016)

Journal ref: ACS Photonics, 2017, 4, 1515

Rapid diffusion of electrons in GaMnAs

Authors: C. P. Weber, Eric A. Kittlaus, Kassandra B. Mattia, Christopher J. Waight, J. Hagmann, X. Liu, M. Dobrowolska, J. K. Furdyna

Abstract: We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a… ▽ More We report ultrafast transient-grating measurements, above and below the Curie temperature, of the dilute ferromagnetic semiconductor (Ga,Mn)As containing 6% Mn. At 80 K (15 K), we observe that photoexcited electrons in the conduction band have a lifetime of 8 ps (5 ps) and diffuse at about 70 cm2/s (60 cm2/s). Such rapid diffusion requires either an electronic mobility exceeding 7,700 cm2/Vs or a conduction-band effective mass less than half the GaAs value. Our data suggest that neither the scattering rate nor the effective mass of the (Ga,Mn)As conduction band differs significantly from that of GaAs. △ Less

Submitted 7 June, 2013; v1 submitted 1 March, 2013; originally announced March 2013.

Comments: 5 pages, 3 figures. Differs from the previous version in incorporating additional data and changes made during the review process. Differs from the published version in including section headings and in omitting AIP copy-edits. No substantial differences in scientific conclusions from either version

Journal ref: Appl. Phys. Lett. 102, 182402 (2013)

Response to the comment of K.W. Edmonds et al. on the article 'Controlling the Curie temperature in (Ga,Mn)As through location of the Fermi level within the impurity band'

Authors: M. Dobrowolska, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz

Abstract: Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form. Although we seriously disagree with many of the points raised in the comment by Edmonds et al., we feel that it is valuable and timely, since comparison of this comment and our paper serves to underscore an important property of the ferromagnetic semiconductor (Ga,Mn)As in thin film form. △ Less

Submitted 16 November, 2012; originally announced November 2012.

Origin of Magnetic Circular Dichroism in GaMnAs: Giant Zeeman Splitting versus Spin Dependent Density of States

Authors: M. Berciu, R. Chakarvorty, Y. Y. Zhou, M. T. Alam, K. Traudt, R. Jakiela, A. Barcz, T. Wojtowicz, X. Liu, J. K. Furdyna, M. Dobrowolska

Abstract: We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being prima… ▽ More We present a unified interpretation of experimentally observed magnetic circular dichroism (MCD) in the ferromagnetic semiconductor (Ga,Mn)As, based on theoretical arguments, which demonstrates that MCD in this material arises primarily from a difference in the density of spin-up and spin-down states in the valence band brought about by the presence of the Mn impurity band, rather than being primarily due to the Zeeman splitting of electronic states. △ Less

Submitted 8 March, 2012; originally announced March 2012.

Comments: 4+ pages, 4 figures

Journal ref: Phys. Rev. Lett. 102, 247202 (2009)

Controlling Curie temperature in (Ga,Ms)As through location of the Fermi level within the impurity band

Authors: M. Dobrowolska, K. Tivakornsasithorn, X. Liu, J. K. Furdyna, M. Berciu, K. M. Yu, W. Walukiewicz

Abstract: The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In… ▽ More The ferromagnetic semiconductor (Ga,Mn)As has emerged as the most studied material for prototype applications in semiconductor spintronics. Because ferromagnetism in (Ga,Mn)As is hole-mediated, the nature of the hole states has direct and crucial bearing on its Curie temperature TC. It is vigorously debated, however, whether holes in (Ga,Mn)As reside in the valence band or in an impurity band. In this paper we combine results of channeling experiments, which measure the concentrations both of Mn ions and of holes relevant to the ferromagnetic order, with magnetization, transport, and magneto-optical data to address this issue. Taken together, these measurements provide strong evidence that it is the location of the Fermi level within the impurity band that determines TC through determining the degree of hole localization. This finding differs drastically from the often accepted view that TC is controlled by valence band holes, thus opening new avenues for achieving higher values of TC. △ Less

Submitted 8 March, 2012; originally announced March 2012.

Comments: 5 figures, supplementary material included

Two-step model versus one-step model of the inter-polarization conversion and statistics of CdSe/ZnSe quantum dot elongations

Authors: A. V. Koudinov, B. R. Namozov, Yu. G. Kusrayev, S. Lee, M. Dobrowolska, J. K. Furdyna

Abstract: The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the qu… ▽ More The magneto-optical inter-polarization conversions by a layer of quantum dots have been investigated. Various types of polarization response of the sample were observed as a function of external magnetic field and of the orientation of the sample. The full set of experimental dependences is analyzed in terms of a one-step and a two-step model of spin evolution. The angular distribution of the quantum dots over the directions of elongation in the plane of the sample is taken into account in terms of the two models, and the model predictions are compared with experimental observations. △ Less

Submitted 8 April, 2008; v1 submitted 31 March, 2008; originally announced March 2008.

Journal ref: Phys. Rev. B 78, 045309 (2008)

Definitive Evidence of Interlayer Coupling Between (Ga,Mn)As Layers Separated by a Nonmagnetic Spacer

Authors: B. J. Kirby, J. A. Borchers, X. Liu, Y. J. Cho, M. Dobrowolska, J. K. Furdyna

Abstract: We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we obse… ▽ More We have used polarized neutron reflectometry to study the structural and magnetic properties of the individual layers in a series of (Al,Be,Ga)As/(Ga,Mn)As/GaAs/(Ga,Mn)As multilayer samples. Structurally, we observe that the samples are virtually identical except for the GaAs spacer thickness (which varies from 3-12 nm), and confirm that the spacers contain little or no Mn. Magnetically, we observe that for the sample with the thickest spacer layer, modulation doping by the(Al,Be,Ga)As results in (Ga,Mn)As layers with very different temperature dependent magnetizations. However, as the spacer layer thickness is reduced, the temperature dependent magnetizations of the top an bottom (Ga,Mn)As layers become progressively more similar - a trend we find to be independent of the crystallographic direction along which spins are magnetized. These results definitively show that (Ga,Mn)As layers can couple across a non-magnetic spacer, and that such coupling depends on spacer thickness. △ Less

Submitted 10 September, 2007; v1 submitted 16 August, 2007; originally announced August 2007.

Comments: Submitted to Physical Review B

Weak localization in GaMnAs: evidence of impurity band transport

Authors: L. P. Rokhinson, Y. Lyanda-Geller, Z. Ge, S. Shen, X. Liu, M. Dobrowolska, J. K. Furdyna

Abstract: We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization… ▽ More We report the observation of negative magnetoresistance in the ferromagnetic semiconductor GaMnAs at low temperatures ($T<3$ K) and low magnetic fields ($0< B <20$ mT). We attribute this effect to weak localization. Observation of weak localization provides a strong evidence of impurity band transport in these materials, since for valence band transport one expects either weak anti-localization due to strong spin-orbit interactions or total suppression of interference by intrinsic magnetization. In addition to the weak localization, we observe Altshuler-Aronov electron-electron interactions effect in this material. △ Less

Submitted 16 July, 2007; originally announced July 2007.

Comments: 5 pages, 4 figure

Magnetic Anisotropy, Spin Pinning and Exchange Constants of (Ga,Mn)As films

Authors: Ying-Yuan Zhou, Yong-Jin Cho, Zhiguo Ge, Xinyu Liu, Malgorzata Dobrowolska, Jacek K. Furdyna

Abstract: We present a detailed investigation of exchange-dominated nonpropagating spin-wave modes in a series of 100 nm Ga$_{1 - x}$Mn$_{x}$As films with Mn concentrations $x$ ranging from 0.02 to 0.08. The angular and Mn concentration dependences of spin wave resonance modes have been studied for both as-grown and annealed samples. Our results indicate that the magnetic anisotropy terms of Ga$_{1 - x}$M… ▽ More We present a detailed investigation of exchange-dominated nonpropagating spin-wave modes in a series of 100 nm Ga$_{1 - x}$Mn$_{x}$As films with Mn concentrations $x$ ranging from 0.02 to 0.08. The angular and Mn concentration dependences of spin wave resonance modes have been studied for both as-grown and annealed samples. Our results indicate that the magnetic anisotropy terms of Ga$_{1 - x}$Mn$_{x}$As depend on the Mn concentration $x$, but are also strongly affected by sample growth conditions; moreover, the magnetic anisotropy of Ga$_{1 - x}$Mn$_{x}$As films is found to be clearly linked to the Curie temperature. The spin wave resonance spectra consist of a series of well resolved standing spin-wave modes. The observed mode patterns are consistent with the Portis volume-inhomogeneity model, in which a spatially nonuniform anisotropy field acts on the Mn spins. The analysis of these exchange-dominated spin wave modes, including their angular dependences, allows us to establish the exchange stiffness constants for Ga$_{1 - x}$Mn$_{x}$As films. △ Less

Submitted 29 January, 2007; originally announced January 2007.

Comments: 4 pages, 3 figures

Magnetic and chemical nonuniformity in Ga[1-x]Mn[x]As films as probed by polarized neutron and x-ray reflectometry

Authors: B. J. Kirby, J. A. Borchers, J. J. Rhyne, K. V. O'Donovan, S. G. E. te Velthuis, S. Roy, Cecilia Sanchez-Hanke, T. Wojtowicz, X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna

Abstract: We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization ca… ▽ More We have used complementary neutron and x-ray reflectivity techniques to examine the depth profiles of a series of as-grown and annealed Ga[1-x]Mn[x]As thin films. A magnetization gradient is observed for two as-grown films and originates from a nonuniformity of Mn at interstitial sites, and not from local variations in Mn at Ga sites. Furthermore, we see that the depth-dependent magnetization can vary drastically among as-grown Ga[1-x]Mn[x]As films despite being deposited under seemingly similar conditions. These results imply that the depth profile of interstitial Mn is dependent not only on annealing, but is also extremely sensitive to initial growth conditions. We observe that annealing improves the magnetization by producing a surface layer that is rich in Mn and O, indicating that the interstitial Mn migrates to the surface. Finally, we expand upon our previous neutron reflectivity study of Ga[1-x]Mn[x]As, by showing how the depth profile of the chemical composition at the surface and through the film thickness is directly responsible for the complex magnetization profiles observed in both as-grown and annealed films. △ Less

Submitted 15 December, 2006; v1 submitted 7 February, 2006; originally announced February 2006.

Comments: Now Published in Physical Review B

Journal ref: Physical Review B, 74, 245304 (2006)

Perpendicular magnetization reversal, magnetic anisotropy, multi-step spin switching, and domain nucleation and expansion in Ga1-xMnxAs films

Authors: X. Liu, W. L. Lim, L. V. Titova, M. Dobrowolska, J. K. Furdyna, M. Kutrowski, T. Wojtowicz

Abstract: We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of a… ▽ More We present a comprehensive study of the reversal process of perpendicular magnetization in thin layers of the ferromagnetic semiconductor Ga1-xMnxAs. For this investigation we have purposely chosen Ga1-xMnxAs with a low Mn concentration (x ~ 0.02), since in such specimens contributions of cubic and uniaxial anisotropy parameters are comparable, allowing us to identify the role of both types of anisotropy in the magnetic reversal process. As a first step we have systematically mapped out the angular dependence of ferromagnetic resonance in thin Ga1-xMnxAs layers, which is a highly effective tool for obtaining the magnetic anisotropy parameters of the material. The process of perpendicular magnetization reversal was then studied by magneto-transport (i.e., Hall effect and planar Hall effect measurements). These measurements enable us to observe coherent spin rotation and non-coherent spin switching between the (100) and (010) planes. A model is proposed to explain the observed multi-step spin switching. The agreement of the model with experiment indicates that it can be reliably used for determining magnetic anisotropy parameters from magneto-transport data. An interesting characteristic of perpendicular magnetization reversal in Ga1-xMnxAs with low x is the appearance of a double hysteresis loops in the magnetization data. This double-loop behavior can be understood by generalizing the proposed model to include the processes of domain nucleation and expansion. △ Less

Submitted 12 May, 2005; originally announced May 2005.

Optical studies of carrier and phonon dynamics in Ga_{1-x}Mn_{x}As

Authors: K. J. Yee, D. Lee, X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna, Y. S. Lim, K. G. Yee, D. S. Kim

Abstract: We present a time-resolved optical study of the dynamics of carriers and phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in low-temperature-grown (LT) GaAs, band gap renormalization effects become important with increasing Mn concentration in Ga_{1-x}Mn_{x}As, as inferred from the sign of the… ▽ More We present a time-resolved optical study of the dynamics of carriers and phonons in Ga_{1-x}Mn_{x}As layers for a series of Mn and hole concentrations. While band filling is the dominant effect in transient optical absorption in low-temperature-grown (LT) GaAs, band gap renormalization effects become important with increasing Mn concentration in Ga_{1-x}Mn_{x}As, as inferred from the sign of the absorption change. We also report direct observation on lattice vibrations in Ga1-xMnxAs layers via reflective electro-optic sampling technique. The data show increasingly fast dephasing of LO phonon oscillations for samples with increasing Mn and hole concentration, which can be understood in term of phonon scattering by the holes. △ Less

Submitted 2 May, 2005; v1 submitted 13 April, 2005; originally announced April 2005.

Comments: 13 pages, 3 figures replaced Fig.1 after finding a mistake in previous version

Optical Orientation of Excitons in CdSe Self-Assembled Quantum Dots

Authors: S. Mackowski, T. Gurung, H. E. Jackson, L. M. Smith, J. K. Furdyna, M. Dobrowolska

Abstract: We study spin dynamics of excitons confined in self-assembled CdSe quantum dots by means of optical orientation in magnetic field. At zero field the exciton emission from QDs populated via LO phonon-assisted absorption shows a circular polarization of 14%. The polarization degree of the excitonic emission increases dramatically when a magnetic field is applied. Using a simple model, we extract t… ▽ More We study spin dynamics of excitons confined in self-assembled CdSe quantum dots by means of optical orientation in magnetic field. At zero field the exciton emission from QDs populated via LO phonon-assisted absorption shows a circular polarization of 14%. The polarization degree of the excitonic emission increases dramatically when a magnetic field is applied. Using a simple model, we extract the exciton spin relaxation times of 100 ps and 2.2 ns in the absence and presence of magnetic field, respectively. With increasing temperature the polarization of the QD emission gradually decreases. Remarkably, the activation energy which describes this decay is independent of the external magnetic field, and, therefore, of the degeneracy of the exciton levels in QDs. This observation implies that the temperature-induced enhancement of the exciton spin relaxation is insensitive to the energy level degeneracy and can be attributed to the same excited state distribution. △ Less

Submitted 1 November, 2004; originally announced November 2004.

Comments: 21 pages, 7 figs - PDF format only

Ferromagnetic resonance study of free hole contribution to magnetization and magnetic anisotropy in modulation-doped Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As:Be

Authors: X. Liu, W. L. Lim, M. Dobrowolska, J. K. Furdyna, T. Wojtowicz

Abstract: Ferromagnetic resonance (FMR) is used to study magnetic anisotropy of GaMnAs in a series of Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As heterostructures modulation-doped by Be. The FMR experiments provide a direct measure of cubic and uniaxial magnetic anisotropy fields, and their dependence on the doping level. It is found that the increase in doping -- in addition to rising the Curie tempera… ▽ More Ferromagnetic resonance (FMR) is used to study magnetic anisotropy of GaMnAs in a series of Ga$_{1 - x}$Mn$_{x}$As/Ga$_{1 - y}$Al$_{y}$As heterostructures modulation-doped by Be. The FMR experiments provide a direct measure of cubic and uniaxial magnetic anisotropy fields, and their dependence on the doping level. It is found that the increase in doping -- in addition to rising the Curie temperature of the Ga$_{1 - x}$Mn$_{x}$As layers -- also leads to a very significant increase of their uniaxial anisotropy field. The FMR measurements further show that the effective $g$-factor of Ga$_{1 - x}$Mn$_{x}$As is also strongly affected by the doping. This in turn provides a direct measure of the contribution from the free hole magnetization to the magnetization of Ga$_{1 - x}$Mn$_{x}$As system as a whole. △ Less

Submitted 14 July, 2004; originally announced July 2004.

Comments: 11 pages, 4 figures

Resonant photoluminescence and excitation spectroscopy of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

Authors: T. A. Nguyen, S. Mackowski, H. Rho, H. E. Jackson, L. M. Smith, J. Wrobel, K. Fronc, J. Kossut, G. Karczewski, M. Dobrowolska, J. Furdyna

Abstract: We show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy s… ▽ More We show that two major carrier excitation mechanisms are present in II-VI self-assembled quantum dots. The first one is related to direct excited state - ground state transition. It manifests itself by the presence of sharp and intense lines in the excitation spectrum measured from single quantum dots. Apart from these lines, we also observe up to four much broader excitation lines. The energy spacing between these lines indicates that they are associated with absorption related to longitudinal optical phonons. By analyzing resonantly excited photoluminescence spectra, we are able to separate the contributions from these two mechanisms. In the case of CdTe dots, the excited state - ground state relaxation is important for all dots in ensemble, while phonon - assisted processes are dominant for the dots with smaller lateral size. △ Less

Submitted 23 October, 2003; originally announced October 2003.

Resonant and non-resonant PL and PLE spectra of CdSe/ZnSe and CdTe/ZnTe self-assembled quantum dots

Authors: T. A. Nguyen, S. Mackowski, L. M. Robinson, H. Rho, H. E. Jackson, L. M. Smith, M. Dobrowolska, J. K. Furdyna, G. Karczewski

Abstract: Using micro- and nano-scale resonantly excited PL and PLE, we study the excitonic structure of CdSe/ZnSe and CdTe/ZnTe self assembled quantum dots (SAQD). Strong resonantly enhanced PL is seen at one to four optic phonon energies below the laser excitation energy. The maximum enhancement is not just one phonon energy above the peak energy distribution of QDs, but rather is 50 meV (for CdSe dots)… ▽ More Using micro- and nano-scale resonantly excited PL and PLE, we study the excitonic structure of CdSe/ZnSe and CdTe/ZnTe self assembled quantum dots (SAQD). Strong resonantly enhanced PL is seen at one to four optic phonon energies below the laser excitation energy. The maximum enhancement is not just one phonon energy above the peak energy distribution of QDs, but rather is 50 meV (for CdSe dots) or 100 meV (for CdTe) above the peak distribution. We interpret this unusual result as from double resonances associated with excited state to ground state energies being commensurate with LO phonons. Such a situation appears to occur only for the high-energy quantum dots. △ Less

Submitted 17 September, 2003; originally announced September 2003.

Comments: Published on CDROM in "Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh 2002"

Magneto-photoluminescence measurements of symmetric and asymmetric CdSe/ZnSe self-assembled quantum dots

Authors: K. P. Hewaparakrama, N. Mukolobwiez, L. M. Smith, H. E. Jackson, S. Lee, M. Dobrowolska, J. Furdyna

Abstract: We study the excitonic structure of CdSe/ZnSe self assembled quantum dots (SAQD) by magneto-photoluminescence (PL) spectroscopy. Using fixed 200 nm apertures through a metal film, we are able to probe single narrow (200 micro-eV) spectroscopic lines emitted from CdSe quantum dots at 2K. Using linear polarization analysis of these lines, we find that approximately half of the quantum dots are ell… ▽ More We study the excitonic structure of CdSe/ZnSe self assembled quantum dots (SAQD) by magneto-photoluminescence (PL) spectroscopy. Using fixed 200 nm apertures through a metal film, we are able to probe single narrow (200 micro-eV) spectroscopic lines emitted from CdSe quantum dots at 2K. Using linear polarization analysis of these lines, we find that approximately half of the quantum dots are elliptically elongated along the [110] direction. The other half of the QDs are symmetric, with emission lines which are completely unpolarized at zero field and exhibit no doublet structure. Using an applied magnetic field, we obtain the diamagnetic shift and the g-factor for several symmetric dots and find that the variation from dot to dot is random, with no systematic dependence with emission energy. In addition, we find no correlation between the diamagnetic shift and the g-factor. △ Less

Submitted 29 August, 2003; originally announced September 2003.

Comments: Published on CDROM in "Proceedings of the 26th International Conference on the Physics of Semiconductors, Edinburgh 2002"

External control of the direction of magnetization in ferromagnetic InMnAs/GaSb heterostructures

Authors: X. Liu, W. L. Lim, L. V. Titova, T. Wojtowicz, M. Kutrowski, K. J. Yee, M. Dobrowolska, J. K. Furdyna, S. J. Potashnik, M. B. Stone, P. Schiffer, I. Vurgaftman, J. R. Meyer

Abstract: In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperat… ▽ More In this paper, we demonstrate external control over the magnetization direction in ferromagnetic (FM) In_{1-x}Mn_{x}As/GaSb heterostructures. FM ordering with T_C as high as 50 K is confirmed by SQUID magnetization, anomalous Hall effect (AHE), and magneto-optical Kerr effect (MOKE) measurements. Even though tensile strain is known to favor an easy axis normal to the layer plane, at low temperatures we observe that the magnetization direction in several samples is intermediate between the normal and in-plane axes. As the temperature increases, however, the easy axis rotates to the direction normal to the plane. We further demonstrate that the easy magnetization axis can be controlled by incident light through a bolometric effect, which induces a pronounced increase in the amplitude of the AHE. A mean-field-theory model for the carrier-mediated ferromagnetism reproduces the tendency for dramatic reorientations of the magnetization axis, but not the specific sensitivity to small temperature variations. △ Less

Submitted 28 August, 2003; originally announced August 2003.

Comments: 11 pages, 3 figures, submitted to NGS-11

Growth and properties of ferromagnetic In(1-x)Mn(x)Sb alloys

Authors: T. Wojtowicz, W. L. Lim, X. Liu, G. Cywinski, M. Kutrowski, L. V. Titova, K. Yee, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, H. Luo, I. Vurgaftman, J. R. Meyer

Abstract: We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system… ▽ More We discuss a new narrow-gap ferromagnetic (FM) semiconductor alloy, In(1-x)Mn(x)Sb, and its growth by low-temperature molecular-beam epitaxy. The magnetic properties were investigated by direct magnetization measurements, electrical transport, magnetic circular dichroism, and the magneto-optical Kerr effect. These data clearly indicate that In(1-x)Mn(x)Sb possesses all the attributes of a system with carrier-mediated FM interactions, including well-defined hysteresis loops, a cusp in the temperature dependence of the resistivity, strong negative magnetoresistance, and a large anomalous Hall effect. The Curie temperatures in samples investigated thus far range up to 8.5 K, which are consistent with a mean-field-theory simulation of the carrier-induced ferromagnetism based on the 8-band effective band-orbital method. △ Less

Submitted 1 July, 2003; originally announced July 2003.

Comments: Invited talk at 11th International Conference on Narrow Gap Semiconductors, Buffalo, New York, U.S.A., June 16 - 20, 2003

Enhancement of Curie temperature in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As ferromagnetic heterostructures by Be modulation doping

Authors: T. Wojtowicz, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, I. Vurgaftman, J. R. Meyer

Abstract: The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitat… ▽ More The effect of modulation doping by Be on the ferromagnetic properties of Ga(1-x)Mn(x)As is investigated in Ga(1-x)Mn(x)As/Ga(1-y)Al(y)As heterojunctions and quantum wells. Introducing Be acceptors into the Ga(1-y)Al(y)As barriers leads to an increase of the Curie temperature T_C of Ga(1-x)Mn(x)As, from 70 K in undoped structures to over 100 K with the modulation doping. This increase is qualitatively consistent with a multi-band mean field theory simulation of carrier-mediated ferromagnetism. An important feature is that the increase of T_C occurs only in those structures where the modulation doping is introduced after the deposition of the magnetic layer, but not when the Be-doped layer is grown first. This behavior is expected from the strong sensitivity of Mn interstitial formation to the value of the Fermi energy during growth. △ Less

Submitted 2 May, 2003; originally announced May 2003.

Comments: 12 pages, 3 figures

Fundamental Curie temperature limit in ferromagnetic GaMnAs

Authors: K. M. Yu, W. Walukiewicz, T. Wojtowicz, W. L. Lim, X. Liu, U. Bindley, M. Dobrowolska, J. K. Furdyna

Abstract: We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increas… ▽ More We provide experimental evidence that the upper limit of ~110 K commonly observed for the Curie temperature T_C of Ga(1-x)Mn(x)As is caused by the Fermi-level-induced hole saturation. Ion channeling, electrical and magnetization measurements on a series of Ga(1-x-y)Mn(x)Be(y)As layers show a dramatic increase of the concentration of Mn interstitials accompanied by a reduction of T_C with increasing Be concentration, while the free hole concentration remains relatively constant at ~5x10^20 cm^-3. These results indicate that the concentrations of free holes and ferromagnetically active Mn spins are governed by the position of the Fermi level, which controls the formation energy of compensating interstitial Mn donors. △ Less

Submitted 12 March, 2003; originally announced March 2003.

Comments: 14 pages, 3 figures

In(1-x)Mn(x)Sb - a new narrow gap ferromagnetic semiconductor

Authors: T. Wojtowicz, G. Cywinski, W. L. Lim, X. Liu, M. Dobrowolska, J. K. Furdyna, K. M. Yu, W. Walukiewicz, G. B. Kim, M. Cheon, X. Chen, S. M. Wang, H. Luo

Abstract: A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. T… ▽ More A narrow-gap ferromagnetic In(1-x)Mn(x)Sb semiconductor alloy was successfully grown by low-temperature molecular beam epitaxy on CdTe/GaAs hybrid substrates. Ferromagnetic order in In(1-x)Mn(x)Sb was unambiguously established by the observation of clear hysteresis loops both in direct magnetization measurements and in the anomalous Hall effect, with Curie temperatures T_C ranging up to 8.5 K. The observed values of T_C agree well with the existing models of carrier-induced ferromagnetism. △ Less

Submitted 11 March, 2003; originally announced March 2003.

Comments: 12 pages, 3 figures