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Showing 1–5 of 5 results for author: Doğan, P

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  1. Nature of excitons bound to inversion domain boundaries: Origin of the 3.45-eV luminescence lines in spontaneously formed GaN nanowires on Si(111)

    Authors: Carsten Pfüller, Pierre Corfdir, Christian Hauswald, Timur Flissikowski, Xiang Kong, Johannes K. Zettler, Sergio Fernández-Garrido, Pınar Doğan, Holger T. Grahn, Achim Trampert, Lutz Geelhaar, Oliver Brandt

    Abstract: We investigate the 3.45-eV luminescence band of spontaneously formed GaN nanowires on Si(111) by photoluminescence and cathodoluminescence spectroscopy. This band is found to be particularly prominent for samples synthesized at comparatively low temperatures. At the same time, these samples exhibit a peculiar morphology, namely, isolated long nanowires are interspersed within a dense matrix of sho… ▽ More

    Submitted 19 October, 2016; v1 submitted 14 July, 2016; originally announced July 2016.

    Comments: 24 pages, 12 figures, 1 table

    Journal ref: Phys. Rev. B 94, 155308 (2016)

  2. Hydride Vapor Phase Epitaxy of GaN on Silicon Covered by Nanostructures

    Authors: U. Jahn, M. Musolino, J. Lähnemann, P. Dogan, S. Fernández Garrido, J. F. Wang, K. Xu, D. Cai, L. F. Bian, X. J. Gong, H. Yang

    Abstract: Several ten $μ$m GaN have been deposited on a silicon substrate using a two-step hydride vapor phase epitaxy (HVPE) process. The substrates have been covered by AlN layers and GaN nanostructures grown by plasma-assisted molecular-beam epitaxy. During the first low-temperature (low-T) HVPE step, stacking faults (SF) form, which show distinct luminescence lines and stripe-like features in cathodolum… ▽ More

    Submitted 10 May, 2016; originally announced May 2016.

    Comments: 19 pages, 11 figures

    Journal ref: Semicond. Sci. Technol. 31, 065018 (2016)

  3. arXiv:1405.1261  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Luminescence associated with stacking faults in GaN

    Authors: Jonas Lähnemann, Uwe Jahn, Oliver Brandt, Timur Flissikowski, Pinar Dogan, Holger T. Grahn

    Abstract: Basal-plane stacking faults are an important class of optically active structural defects in wurtzite semiconductors. The local deviation from the 2H stacking of the wurtzite matrix to a 3C zinc-blende stacking induces a bound state in the gap of the host crystal, resulting in the localization of excitons. Due to the two-dimensional nature of these planar defects, stacking faults act as quantum we… ▽ More

    Submitted 30 July, 2014; v1 submitted 6 May, 2014; originally announced May 2014.

    Comments: 16 pages, 14 figures

    Journal ref: J. Physics D: Appl. Phys. 47, 423001 (2014)

  4. Macro- and micro-strain in GaN nanowires on Si(111)

    Authors: Bernd Jenichen, Oliver Brandt, Carsten Pfueller, Pinar Dogan, Mathias Knelangen, Achim Trampert

    Abstract: We analyze the strain state of GaN nanowire ensembles by x-ray diffraction. The nanowires are grown by molecular beam epitaxy on a Si(111) substrate in a self-organized manner. On a macroscopic scale, the nanowires are found to be free of strain. However, coalescence of the nanowires results in micro-strain with a magnitude from +-0.015% to +-0.03%.This micro-strain contributes to the linewidth ob… ▽ More

    Submitted 12 June, 2012; originally announced June 2012.

    Journal ref: Nanotechnology 22 (2011) 295714 (5pp)

  5. arXiv:1201.4294  [pdf, ps, other

    cond-mat.mtrl-sci cond-mat.mes-hall

    Direct experimental determination of the spontaneous polarization of GaN

    Authors: Jonas Lähnemann, Oliver Brandt, Uwe Jahn, Carsten Pfüller, Claudia Roder, Pinar Dogan, Frank Grosse, Abderrezak Belabbes, Friedhelm Bechstedt, Achim Trampert, Lutz Geelhaar

    Abstract: We present a universal approach for determining the spontaneous polarization Psp of a wurtzite semiconductor from the emission energies of excitons bound to the different types of stacking faults in these crystals. Employing micro-photoluminescence and cathodoluminescence spectroscopy, we observe emission lines from the intrinsic and extrinsic stacking faults in strain-free GaN micro-crystals. By… ▽ More

    Submitted 6 August, 2012; v1 submitted 20 January, 2012; originally announced January 2012.

    Comments: 5 pages, 5 figures

    Journal ref: Physical Review B 86, 081302(R) (2012)