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Rational Strain Engineering in Delafossite Oxides for Highly Efficient Hydrogen Evolution Catalysis in Acidic Media
Authors:
Filip Podjaski,
Daniel Weber,
Siyuan Zhang,
Leo Diehl,
Roland Eger,
Viola Duppel,
Esther Alarcon-Llado,
Gunther Richter,
Frederik Haase,
Anna Fontcuberta i Morral,
Christina Scheu,
Bettina V. Lotsch
Abstract:
The rational design of hydrogen evolution reaction (HER) electrocatalysts which are competitive with platinum is an outstanding challenge to make power-to-gas technologies economically viable. Here, we introduce the delafossites PdCrO$_2$, PdCoO$_2$ and PtCoO$_2$ as a new family of electrocatalysts for the HER in acidic media. We show that in PdCoO$_2$ the inherently strained Pd metal sublattice a…
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The rational design of hydrogen evolution reaction (HER) electrocatalysts which are competitive with platinum is an outstanding challenge to make power-to-gas technologies economically viable. Here, we introduce the delafossites PdCrO$_2$, PdCoO$_2$ and PtCoO$_2$ as a new family of electrocatalysts for the HER in acidic media. We show that in PdCoO$_2$ the inherently strained Pd metal sublattice acts as a pseudomorphic template for the growth of a strained (by +2.3%) Pd rich capping layer under reductive conditions. The surface modification continuously improves the electrocatalytic activity by simultaneously increasing the exchange current density j$_0$ from 2 to 5 mA/cm$^2_{geo}$ and by reducing the Tafel slope down to 38 mV/decade, leading to overpotentials $η_{10}$ < 15 mV for 10 mA/cm$^2_{geo}$, superior to bulk platinum. The greatly improved activity is attributed to the in-situ stabilization of a $β$-palladium hydride phase with drastically enhanced surface catalytic properties with respect to pure or nanostructured palladium. These findings illustrate how operando induced electrodissolution can be used as a top-down design concept for rational surface and property engineering through the strain-stabilized formation of catalytically active phases.
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Submitted 11 March, 2019;
originally announced March 2019.
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Intra-valence-band mixing in strain-compensated SiGe quantum wells
Authors:
S. Tsujino,
A. Borak,
C. Falub,
T. Fromherz,
L. Diehl,
H. Sigg,
D. Gruetzmacher
Abstract:
We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (hh), light hole (lh) and split-off hole (so) states are resolved to ~…
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We explore the midinfrared absorption of strain-compensated p-Si0.2Ge0.8/Si quantum wells for various well thicknesses and temperatures. Owing to the large band offset due to the large bi-axial strain contrast between the wells and barriers, the intersubband transitions energies from the ground state to the excited heavy hole (hh), light hole (lh) and split-off hole (so) states are resolved to ~0.5 eV. When hh2 is within ~30 meV of lh1 or so1 a partial transfer of the hh1-hh2 oscillator strength to the hh1-lh1 or hh1-so1 transitions is observed, which is otherwise forbidden for light polarized perpendicular to the plane of the wells. This is a clear sign of mixing between the hh and lh or so-states. A large temperature induced broadening of hh2 peak is observed for narrow wells indicating a non-parabolic dispersion of the hh2 states due to the mixing with the lh/so continuum. We found that the 6-band k.p theory gives a quantitative account of the observations. A possible role of many-body effects in the temperatureinduced negative peak shift is discussed.
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Submitted 13 May, 2005;
originally announced May 2005.
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Total Angular Momentum Conservation During Tunnelling through Semiconductor Barriers
Authors:
U. Gennser,
M. Scheinert,
L. Diehl,
S. Tsujino,
A. Borak,
C. V. Falub,
D. Grützmacher,
A. Weber,
D. K. Maude,
Y. Campidelli,
O. Kermarrec,
D. Bensahel
Abstract:
We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnel…
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We have investigated the electrical transport through strained p-Si/Si_{1-x}Ge_x double-barrier resonant tunnelling diodes. The confinement shift for diodes with different well width, the shift due to a central potential spike in a well, and magnetotunnelling spectroscopy demonstrate that the first two resonances are due to tunnelling through heavy hole levels, whereas there is no sign of tunnelling through the first light hole state. This demonstrates for the first time the conservation of the total angular momentum in valence band resonant tunnelling. It is also shown that conduction through light hole states is possible in many structures due to tunnelling of carriers from bulk emitter states.
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Submitted 17 June, 2005; v1 submitted 10 January, 2005;
originally announced January 2005.
