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A Generative Neural Annealer for Black-Box Combinatorial Optimization
Authors:
Yuan-Hang Zhang,
Massimiliano Di Ventra
Abstract:
We propose a generative, end-to-end solver for black-box combinatorial optimization that emphasizes both sample efficiency and solution quality on NP problems. Drawing inspiration from annealing-based algorithms, we treat the black-box objective as an energy function and train a neural network to model the associated Boltzmann distribution. By conditioning on temperature, the network captures a co…
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We propose a generative, end-to-end solver for black-box combinatorial optimization that emphasizes both sample efficiency and solution quality on NP problems. Drawing inspiration from annealing-based algorithms, we treat the black-box objective as an energy function and train a neural network to model the associated Boltzmann distribution. By conditioning on temperature, the network captures a continuum of distributions--from near-uniform at high temperatures to sharply peaked around global optima at low temperatures--thereby learning the structure of the energy landscape and facilitating global optimization. When queries are expensive, the temperature-dependent distributions naturally enable data augmentation and improve sample efficiency. When queries are cheap but the problem remains hard, the model learns implicit variable interactions, effectively "opening" the black box. We validate our approach on challenging combinatorial tasks under both limited and unlimited query budgets, showing competitive performance against state-of-the-art black-box optimizers.
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Submitted 14 May, 2025;
originally announced May 2025.
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Chirality-induced Spin-Orbit Coupling and Spin Selectivity
Authors:
Massimiliano Di Ventra,
Rafael Gutierrez,
Gianaurelio Cuniberti
Abstract:
We show that a spinor traveling along a helical path develops a spin-orbit coupling because of the curvature of the path. We then estimate the magnitude of this effective geometric spin-orbit interaction for structures that showcase chirality-induced spin selectivity (CISS). We find that this chirality-induced spin-orbit coupling ($χ$-SOC), in conjunction with broken time-reversal symmetry, may be…
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We show that a spinor traveling along a helical path develops a spin-orbit coupling because of the curvature of the path. We then estimate the magnitude of this effective geometric spin-orbit interaction for structures that showcase chirality-induced spin selectivity (CISS). We find that this chirality-induced spin-orbit coupling ($χ$-SOC), in conjunction with broken time-reversal symmetry, may be an important ingredient for the microscopic underpinning of the CISS phenomenon.
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Submitted 22 May, 2025; v1 submitted 13 February, 2025;
originally announced February 2025.
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Memory-induced long-range order in dynamical systems
Authors:
C. Sipling,
Y. -H. Zhang,
M. Di Ventra
Abstract:
Time non-locality, or memory, is a non-equilibrium property shared by all physical systems. Here, we show that memory is sufficient to induce a phase of spatial long-range order (LRO) even if the system's primary dynamical variables are coupled locally. This occurs when the memory degrees of freedom have slower dynamics than the primary degrees of freedom. In addition, such an LRO phase is non-per…
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Time non-locality, or memory, is a non-equilibrium property shared by all physical systems. Here, we show that memory is sufficient to induce a phase of spatial long-range order (LRO) even if the system's primary dynamical variables are coupled locally. This occurs when the memory degrees of freedom have slower dynamics than the primary degrees of freedom. In addition, such an LRO phase is non-perturbative, and can be understood through the lens of a correlated percolation transition of the fast degrees of freedom mediated by memory. When the two degrees of freedom have comparable time scales, the length of the effective long-range interaction shortens. We exemplify this behavior with a model of locally coupled spins and a single dynamic memory variable, but our analysis is sufficiently general to suggest that memory could induce a phase of LRO in a much wider variety of physical systems.
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Submitted 24 June, 2025; v1 submitted 10 May, 2024;
originally announced May 2024.
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Collective dynamics and long-range order in thermal neuristor networks
Authors:
Yuan-Hang Zhang,
Chesson Sipling,
Erbin Qiu,
Ivan K. Schuller,
Massimiliano Di Ventra
Abstract:
In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed "thermal neuristors." These devices function via thermal interactions among neighboring vanadium dioxide resistive memories, emulating biological neuronal behavior. Here, we show that the collective dynamical behavior of networks of these neurons showca…
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In the pursuit of scalable and energy-efficient neuromorphic devices, recent research has unveiled a novel category of spiking oscillators, termed "thermal neuristors." These devices function via thermal interactions among neighboring vanadium dioxide resistive memories, emulating biological neuronal behavior. Here, we show that the collective dynamical behavior of networks of these neurons showcases a rich phase structure, tunable by adjusting the thermal coupling and input voltage. Notably, we identify phases exhibiting long-range order that, however, does not arise from criticality, but rather from the time non-local response of the system. In addition, we show that these thermal neuristor arrays achieve high accuracy in image recognition and time series prediction through reservoir computing, without leveraging long-range order. Our findings highlight a crucial aspect of neuromorphic computing with possible implications on the functioning of the brain: criticality may not be necessary for the efficient performance of neuromorphic systems in certain computational tasks.
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Submitted 10 July, 2024; v1 submitted 20 December, 2023;
originally announced December 2023.
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Nanofluidic logic with mechano-ionic memristive switches
Authors:
Theo Emmerich,
Yunfei Teng,
Nathan Ronceray,
Edoardo Lopriore,
Riccardo Chiesa,
Andrey Chernev,
Vasily Artemov,
Massimiliano Di Ventra,
Andras Kis,
Aleksandra Radenovic
Abstract:
While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic computers mimicking the brain down to its basic principles of operation. Here, we present a nanofluidic device designed for circuit scale in-memory processing that…
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While most neuromorphic systems are based on nanoscale electronic devices, nature relies on ions for energy-efficient information processing. Therefore, finding memristive nanofluidic devices is a milestone toward realizing electrolytic computers mimicking the brain down to its basic principles of operation. Here, we present a nanofluidic device designed for circuit scale in-memory processing that combines single-digit nanometric confinement and large entrance asymmetry. Our fabrication process is scalable while the device operates at the second timescale with a conductance ratio in the range 10-60. In-operando optical microscopy unveils the origin of memory, arising from the reversible formation of liquid blisters modulating the device conductance. The combination of features of these mechano-ionic memristive switches permits assembling logic circuits composed of two interactive devices and an ohmic resistor. These results open the way to design multi-component ionic machinery, such as nanofluidic neural networks, and implementing brain-inspired ionic computations.
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Submitted 22 November, 2023; v1 submitted 13 June, 2023;
originally announced June 2023.
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Brain-like features of MemComputing machines
Authors:
Massimiliano Di Ventra
Abstract:
MemComputing is a new model of computation that exploits the non-equilibrium property-we call 'memory'-of any physical system to respond to external perturbations by keeping track of how it has reacted at previous times. Its digital, scalable version maps a finite string of symbols into a finite string of symbols. In this paper, I will discuss some analogies of the operation of MemComputing machin…
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MemComputing is a new model of computation that exploits the non-equilibrium property-we call 'memory'-of any physical system to respond to external perturbations by keeping track of how it has reacted at previous times. Its digital, scalable version maps a finite string of symbols into a finite string of symbols. In this paper, I will discuss some analogies of the operation of MemComputing machines-in general, and digital in particular-with a few physical properties of the biological brain. These analogies could be a source of inspiration to improve on the design of these machines. In turn, they could suggest new directions of study in (computational) neuroscience.
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Submitted 6 February, 2023;
originally announced February 2023.
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Self-averaging of digital memcomputing machines
Authors:
Daniel Primosch,
Yuan-Hang Zhang,
Massimiliano Di Ventra
Abstract:
Digital memcomputing machines (DMMs) are a new class of computing machines that employ non-quantum dynamical systems with memory to solve combinatorial optimization problems. Here, we show that the time to solution (TTS) of DMMs follows an inverse Gaussian distribution, with the TTS self-averaging with increasing problem size, irrespective of the problem they solve. We provide both an analytical u…
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Digital memcomputing machines (DMMs) are a new class of computing machines that employ non-quantum dynamical systems with memory to solve combinatorial optimization problems. Here, we show that the time to solution (TTS) of DMMs follows an inverse Gaussian distribution, with the TTS self-averaging with increasing problem size, irrespective of the problem they solve. We provide both an analytical understanding of this phenomenon and numerical evidence by solving instances of the 3-SAT (satisfiability) problem. The self-averaging property of DMMs with problem size implies that they are increasingly insensitive to the detailed features of the instances they solve. This is in sharp contrast to traditional algorithms applied to the same problems, illustrating another advantage of this physics-based approach to computation.
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Submitted 7 September, 2023; v1 submitted 20 January, 2023;
originally announced January 2023.
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Transformer Quantum State: A Multi-Purpose Model for Quantum Many-Body Problems
Authors:
Yuan-Hang Zhang,
Massimiliano Di Ventra
Abstract:
Inspired by the advancements in large language models based on transformers, we introduce the transformer quantum state (TQS): a versatile machine learning model for quantum many-body problems. In sharp contrast to Hamiltonian/task specific models, TQS can generate the entire phase diagram, predict field strengths with experimental measurements, and transfer such a knowledge to new systems it has…
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Inspired by the advancements in large language models based on transformers, we introduce the transformer quantum state (TQS): a versatile machine learning model for quantum many-body problems. In sharp contrast to Hamiltonian/task specific models, TQS can generate the entire phase diagram, predict field strengths with experimental measurements, and transfer such a knowledge to new systems it has never been trained on before, all within a single model. With specific tasks, fine-tuning the TQS produces accurate results with small computational cost. Versatile by design, TQS can be easily adapted to new tasks, thereby pointing towards a general-purpose model for various challenging quantum problems.
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Submitted 11 February, 2023; v1 submitted 2 August, 2022;
originally announced August 2022.
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MemComputing vs. Quantum Computing: some analogies and major differences
Authors:
Massimiliano Di Ventra
Abstract:
Quantum computing employs some quantum phenomena to process information. It has been hailed as the future of computing but it is plagued by serious hurdles when it comes to its practical realization. MemComputing is a new paradigm that instead employs non-quantum dynamical systems and exploits time non-locality (memory) to compute. It can be efficiently emulated in software and its path towards ha…
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Quantum computing employs some quantum phenomena to process information. It has been hailed as the future of computing but it is plagued by serious hurdles when it comes to its practical realization. MemComputing is a new paradigm that instead employs non-quantum dynamical systems and exploits time non-locality (memory) to compute. It can be efficiently emulated in software and its path towards hardware is more straightforward. I will discuss some analogies between these two computing paradigms, and the major differences that set them apart.
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Submitted 23 March, 2022; v1 submitted 22 March, 2022;
originally announced March 2022.
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Kondo cooling in quantum impurity systems
Authors:
Xiangzhong Zeng,
Lyuzhou Ye,
Long Cao,
Rui-Xue Xu,
Xiao Zheng,
Massimiliano Di Ventra
Abstract:
The Peltier effect is the reverse phenomenon of the Seebeck effect, and has been observed experimentally in nanoscale junctions. However, despite its promising applications in local cooling of nanoelectronic devices, the role of strong electron correlations on such a phenomenon is still unclear. Here, by analyzing the thermoelectric properties of quantum impurity systems out of equilibrium, we unv…
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The Peltier effect is the reverse phenomenon of the Seebeck effect, and has been observed experimentally in nanoscale junctions. However, despite its promising applications in local cooling of nanoelectronic devices, the role of strong electron correlations on such a phenomenon is still unclear. Here, by analyzing the thermoelectric properties of quantum impurity systems out of equilibrium, we unveil the essential role of electron-electron interactions and quantum resonant states in Peltier cooling, leading to the prediction of the Kondo cooling phenomenon. The existence of such Kondo cooling is validated by a reverse heat current and a lowered local temperature in a model junction. The discovery of this unconventional Peltier cooling offers a new approach toward nano-refrigeration, and highlights the unique role of strong electron correlations in nonequilibrium quantum systems.
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Submitted 15 March, 2022;
originally announced March 2022.
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Antiferromagnetic parametric resonance driven by voltage-controlled magnetic anisotropy
Authors:
Riccardo Tomasello,
Roman Verba,
Victor Lopez-Dominguez,
Francesca Garesci,
Mario Carpentieri,
Massimiliano Di Ventra,
Pedram Khalili Amiri,
Giovanni Finocchio
Abstract:
Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Ne…
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Voltage controlled magnetic anisotropy (VCMA) is a low-energy alternative to manipulate the ferromagnetic state, which has been recently considered also in antiferromagnets (AFMs). Here, we theoretically demonstrate that VCMA can be used to excite linear and parametric resonant modes in easy-axis AFMs with perpendicular anisotropy, thus opening the way for an efficient electrical control of the Neel vector, and for detection of high-frequency dynamics. Our work leads to two key results: (i) VCMA parametric pumping experiences the so-called exchange enhancement of the coupling efficiency and, thus, is 1-2 orders of magnitude more efficient than microwave magnetic fields or spin-orbit-torques, and (ii) it also allows for zero-field parametric resonance, which cannot be achieved by other parametric pumping mechanisms in AFMs with out-of-plane easy axis. Therefore, we demonstrate that the VCMA parametric pumping is the most promising method for coherent excitation and manipulation of AFM order in perpendicular easy-axis AFMs.
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Submitted 2 February, 2022;
originally announced February 2022.
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Custodial chiral symmetry in a Su-Schrieffer-Heeger electrical circuit with memory
Authors:
Massimiliano Di Ventra,
Yuriy V. Pershin,
Chih-Chun Chien
Abstract:
Custodial symmetries are common in the Standard Model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory (memcircuit). In the absence of memory, the SSH circuit supports a symmetry-protecte…
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Custodial symmetries are common in the Standard Model of particle physics. They arise when quantum corrections to a parameter are proportional to the parameter itself. Here, we show that a custodial symmetry of the chiral type is also present in a classical Su-Schrieffer-Heeger (SSH) electrical circuit with memory (memcircuit). In the absence of memory, the SSH circuit supports a symmetry-protected topological edge state. Memory induces nonlinearities that break chiral symmetry explicitly and spreads the state across the circuit. However, the resulting state is still protected against perturbations by the ensuing custodial chiral symmetry. These predictions can be verified experimentally and demonstrate the interplay between symmetry and memory.
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Submitted 4 March, 2022; v1 submitted 8 September, 2021;
originally announced September 2021.
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Thousand-fold Increase in Plasmonic Light Emission via Combined Electronic and Optical Excitations
Authors:
Longji Cui,
Yunxuan Zhu,
Peter Nordlander,
Massimiliano Di Ventra,
Douglas Natelson
Abstract:
Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically- and optically excited localized surface plasmons, we report a much greater (over 1000x) plasmonic light emission at upconverted photon energies und…
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Surface plasmon enhanced processes and hot-carrier dynamics in plasmonic nanostructures are of great fundamental interest to reveal light-matter interactions at the nanoscale. Using plasmonic tunnel junctions as a platform supporting both electrically- and optically excited localized surface plasmons, we report a much greater (over 1000x) plasmonic light emission at upconverted photon energies under combined electro-optical excitation, compared with electrical or optical excitation separately. Two mechanisms compatible with the form of the observed spectra are interactions of plasmon-induced hot carriers and electronic anti-Stokes Raman scattering. Our measurement results are in excellent agreement with a theoretical model combining electro-optical generation of hot carriers through non-radiative plasmon excitation and hot-carrier relaxation. We also discuss the challenge of distinguishing relative contributions of hot carrier emission and the anti-Stokes electronic Raman process. This observed increase in above-threshold emission in plasmonic systems may open avenues in on-chip nanophotonic switching and hot carrier photocatalysis.
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Submitted 22 June, 2021;
originally announced June 2021.
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A Finite-temperature Phase Transition for the Ising Spin-glass in $d\geq 2$
Authors:
Yan Ru Pei,
Massimiliano Di Ventra
Abstract:
It is believed that the $\pm J$ Ising spin-glass does not order at finite temperatures in dimension $d=2$. However, using a graphical representation and a contour argument, we prove rigorously the existence of a finite-temperature phase transition in $d\geq 2$ with $T_c \geq 0.4$. In the graphical representation, the low-temperature phase allows for the coexistence of multiple infinite clusters ea…
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It is believed that the $\pm J$ Ising spin-glass does not order at finite temperatures in dimension $d=2$. However, using a graphical representation and a contour argument, we prove rigorously the existence of a finite-temperature phase transition in $d\geq 2$ with $T_c \geq 0.4$. In the graphical representation, the low-temperature phase allows for the coexistence of multiple infinite clusters each with a rigidly aligned spin-overlap state. These clusters correlate negatively with each other, and are entropically stable without breaking any global symmetry. They can emerge in most graph structures and disorder measures.
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Submitted 19 September, 2022; v1 submitted 3 May, 2021;
originally announced May 2021.
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An experimental demonstration of the memristor test
Authors:
Y. V. Pershin,
J. Kim,
T. Datta,
M. Di Ventra
Abstract:
A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (…
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A simple and unambiguous test has been recently suggested [J. Phys. D: Applied Physics, 52, 01LT01 (2018)] to check experimentally if a resistor with memory is indeed a memristor, namely a resistor whose resistance depends only on the charge that flows through it, or on the history of the voltage across it. However, although such a test would represent the litmus test for claims about memristors (in the ideal sense), it has yet to be applied widely to actual physical devices. In this paper, we experimentally apply it to a current-carrying wire interacting with a magnetic core, which was recently claimed to be a memristor (so-called `$Φ$ memristor') [J. Appl. Phys. 125, 054504 (2019)]. The results of our experiment demonstrate unambiguously that this `$Φ$ memristor' is not a memristor: it is simply an inductor with memory. This demonstration casts further doubts that ideal memristors do actually exist in nature or may be easily created in the lab.
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Submitted 23 February, 2021;
originally announced February 2021.
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Non-equilibrium criticality and efficient exploration of glassy landscapes with memory dynamics
Authors:
Yan Ru Pei,
Massimiliano Di Ventra
Abstract:
Spin glasses are notoriously difficult to study both analytically and numerically due to the presence of frustration and metastability. Their highly non-convex landscapes require collective updates to explore efficiently. Currently, most state-of-the-art algorithms rely on stochastic spin clusters to perform non-local updates, but such "cluster algorithms" lack general efficiency. Here, we introdu…
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Spin glasses are notoriously difficult to study both analytically and numerically due to the presence of frustration and metastability. Their highly non-convex landscapes require collective updates to explore efficiently. Currently, most state-of-the-art algorithms rely on stochastic spin clusters to perform non-local updates, but such "cluster algorithms" lack general efficiency. Here, we introduce a non-equilibrium approach for simulating spin glasses based on classical dynamics with memory. By simulating various classes of 3d spin glasses (Edwards-Anderson, partially-frustrated, and fully-frustrated models), we find that memory dynamically promotes critical spin clusters during time evolution, in a self-organizing manner. This facilitates an efficient exploration of the low-temperature phases of spin glasses.
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Submitted 27 March, 2021; v1 submitted 8 February, 2021;
originally announced February 2021.
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Directed percolation and numerical stability of simulations of digital memcomputing machines
Authors:
Yuan-Hang Zhang,
Massimiliano Di Ventra
Abstract:
Digital memcomputing machines (DMMs) are a novel, non-Turing class of machines designed to solve combinatorial optimization problems. They can be physically realized with continuous-time, non-quantum dynamical systems with memory (time non-locality), whose ordinary differential equations (ODEs) can be numerically integrated on modern computers. Solutions of many hard problems have been reported by…
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Digital memcomputing machines (DMMs) are a novel, non-Turing class of machines designed to solve combinatorial optimization problems. They can be physically realized with continuous-time, non-quantum dynamical systems with memory (time non-locality), whose ordinary differential equations (ODEs) can be numerically integrated on modern computers. Solutions of many hard problems have been reported by numerically integrating the ODEs of DMMs, showing substantial advantages over state-of-the-art solvers. To investigate the reasons behind the robustness and effectiveness of this method, we employ three explicit integration schemes (forward Euler, trapezoid and Runge-Kutta 4th order) with a constant time step, to solve 3-SAT instances with planted solutions. We show that, (i) even if most of the trajectories in the phase space are destroyed by numerical noise, the solution can still be achieved; (ii) the forward Euler method, although having the largest numerical error, solves the instances in the least amount of function evaluations; and (iii) when increasing the integration time step, the system undergoes a "solvable-unsolvable transition" at a critical threshold, which needs to decay at most as a power law with the problem size, to control the numerical errors. To explain these results, we model the dynamical behavior of DMMs as directed percolation of the state trajectory in the phase space in the presence of noise. This viewpoint clarifies the reasons behind their numerical robustness and provides an analytical understanding of the unsolvable-solvable transition. These results land further support to the usefulness of DMMs in the solution of hard combinatorial optimization problems.
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Submitted 31 March, 2021; v1 submitted 6 February, 2021;
originally announced February 2021.
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Nanomagnetic Self-Organizing Logic Gates
Authors:
Pieter Gypens,
Jonathan Leliaert,
Massimiliano Di Ventra,
Bartel Van Waeyenberge,
Daniele Pinna
Abstract:
The end of Moore's law for CMOS technology has prompted the search for low-power computing alternatives, resulting in several promising proposals based on magnetic logic[1-8]. One approach aims at tailoring arrays of nanomagnetic islands in which the magnetostatic interactions constrain the equilibrium orientation of the magnetization to embed logical functionalities[9-12]. Despite the realization…
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The end of Moore's law for CMOS technology has prompted the search for low-power computing alternatives, resulting in several promising proposals based on magnetic logic[1-8]. One approach aims at tailoring arrays of nanomagnetic islands in which the magnetostatic interactions constrain the equilibrium orientation of the magnetization to embed logical functionalities[9-12]. Despite the realization of several proofs of concepts of such nanomagnetic logic[13-15], it is still unclear what the advantages are compared to the widespread CMOS designs, due to their need for clocking[16, 17] and/or thermal annealing [18,19] for which fast convergence to the ground state is not guaranteed. In fact, it seems increasingly evident that "beyond CMOS" technology will require a fundamental rethinking of our computing paradigm[20]. In this respect, a type of terminal-agnostic logic was suggested[21], where a given gate is able to "self-organize" into its correct logical states, regardless of whether the signal is applied to the traditional input terminals, or the output terminals. Here, we introduce nanomagnetic self-organizing balanced logic gates, that employ stray-field coupled nanomagnetic islands to perform terminal-agnostic logic. We illustrate their capabilities by implementing reversible Boolean circuitry to solve a two-bit factorization problem via numerical modelling. In view of their design and mode of operation, we expect these systems to improve significantly over those suggested in Ref.[21], thus offering an alternative path to explore memcomputing, whose usefulness has already been demonstrated by solving a variety of hard combinatorial optimization problems[22].
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Submitted 23 December, 2020;
originally announced December 2020.
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Efficient Solution of Boolean Satisfiability Problems with Digital MemComputing
Authors:
S. R. B. Bearden,
Y. R. Pei,
M. Di Ventra
Abstract:
Boolean satisfiability is a propositional logic problem of interest in multiple fields, e.g., physics, mathematics, and computer science. Beyond a field of research, instances of the SAT problem, as it is known, require efficient solution methods in a variety of applications. It is the decision problem of determining whether a Boolean formula has a satisfying assignment, believed to require expone…
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Boolean satisfiability is a propositional logic problem of interest in multiple fields, e.g., physics, mathematics, and computer science. Beyond a field of research, instances of the SAT problem, as it is known, require efficient solution methods in a variety of applications. It is the decision problem of determining whether a Boolean formula has a satisfying assignment, believed to require exponentially growing time for an algorithm to solve for the worst-case instances. Yet, the efficient solution of many classes of Boolean formulae eludes even the most successful algorithms, not only for the worst-case scenarios, but also for typical-case instances. Here, we introduce a memory-assisted physical system (a digital memcomputing machine) that, when its non-linear ordinary differential equations are integrated numerically, shows evidence for polynomially-bounded scalability while solving "hard" planted-solution instances of SAT, known to require exponential time to solve in the typical case for both complete and incomplete algorithms. Furthermore, we analytically demonstrate that the physical system can efficiently solve the SAT problem in continuous time, without the need to introduce chaos or an exponentially growing energy. The efficiency of the simulations is related to the collective dynamical properties of the original physical system that persist in the numerical integration to robustly guide the solution search even in the presence of numerical errors. We anticipate our results to broaden research directions in physics-inspired computing paradigms ranging from theory to application, from simulation to hardware implementation.
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Submitted 12 November, 2020;
originally announced November 2020.
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Effect of quantum resonances on local temperature in nonequilibrium open systems
Authors:
Xiangzhong Zeng,
Lyuzhou Ye,
Daochi Zhang,
Rui-Xue Xu,
Xiao Zheng,
Massimiliano Di Ventra
Abstract:
Measuring local temperatures of open systems out of equilibrium is emerging as a novel approach to study the local thermodynamic properties of nanosystems. An operational protocol has been proposed to determine the local temperature by coupling a probe to the system and then minimizing the perturbation to a certain local observable of the probed system. In this paper, we first show that such a loc…
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Measuring local temperatures of open systems out of equilibrium is emerging as a novel approach to study the local thermodynamic properties of nanosystems. An operational protocol has been proposed to determine the local temperature by coupling a probe to the system and then minimizing the perturbation to a certain local observable of the probed system. In this paper, we first show that such a local temperature is unique for a single quantum impurity and the given local observable. We then extend this protocol to open systems consisting of multiple quantum impurities by proposing a local minimal perturbation condition (LMPC). The influence of quantum resonances on the local temperature is elucidated by both analytic and numerical results. In particular, we demonstrate that quantum resonances may give rise to strong oscillations of the local temperature along a multiimpurity chain under a thermal bias.
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Submitted 9 February, 2021; v1 submitted 29 July, 2020;
originally announced July 2020.
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The promise of spintronics for unconventional computing
Authors:
Giovanni Finocchio,
Massimiliano Di Ventra,
Kerem Y. Camsari,
Karin Everschor-Sitte,
Pedram Khalili Amiri,
Zhongming Zeng
Abstract:
Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient device…
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Novel computational paradigms may provide the blueprint to help solving the time and energy limitations that we face with our modern computers, and provide solutions to complex problems more efficiently (with reduced time, power consumption and/or less device footprint) than is currently possible with standard approaches. Spintronics offers a promising basis for the development of efficient devices and unconventional operations for at least three main reasons: (i) the low-power requirements of spin-based devices, i.e., requiring no standby power for operation and the possibility to write information with small dynamic energy dissipation, (ii) the strong nonlinearity, time nonlocality, and/or stochasticity that spintronic devices can exhibit, and (iii) their compatibility with CMOS logic manufacturing processes. At the same time, the high endurance and speed of spintronic devices means that they can be rewritten or reconfigured frequently over the lifetime of a circuit, a feature that is essential in many emerging computing concepts. In this perspective, we will discuss how spintronics may aid in the realization of efficient devices primarily based on magnetic tunnel junctions and how those devices can impact in the development of three unconventional computing paradigms, namely, reservoir computing, probabilistic computing and memcomputing that in our opinion may be used to address some limitations of modern computers, providing a realistic path to intelligent hybrid CMOS-spintronic systems.
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Submitted 16 October, 2019;
originally announced October 2019.
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Local Temperatures Out of Equilibrium
Authors:
Daochi Zhang,
Xiao Zheng,
Massimiliano Di Ventra
Abstract:
The temperature of a physical system is operationally defined in physics as "that quantity which is measured by a thermometer" weakly coupled to, and at equilibrium with the system. This definition is unique only at global equilibrium in view of the zeroth law of thermodynamics: when the system and the thermometer have reached equilibrium, the "thermometer degrees of freedom" can be traced out and…
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The temperature of a physical system is operationally defined in physics as "that quantity which is measured by a thermometer" weakly coupled to, and at equilibrium with the system. This definition is unique only at global equilibrium in view of the zeroth law of thermodynamics: when the system and the thermometer have reached equilibrium, the "thermometer degrees of freedom" can be traced out and the temperature read by the thermometer can be uniquely assigned to the system. Unfortunately, such a procedure cannot be straightforwardly extended to a system out of equilibrium, where local excitations may be spatially inhomogeneous and the zeroth law of thermodynamics does not hold. With the advent of several experimental techniques that attempt to extract a single parameter characterizing the degree of local excitations of a (mesoscopic or nanoscale) system out of equilibrium, this issue is making a strong comeback to the forefront of research. In this paper, we will review the difficulties to define a unique temperature out of equilibrium, the majority of definitions that have been proposed so far, and discuss both their advantages and limitations. We will then examine a variety of experimental techniques developed for measuring the non-equilibrium local temperatures under various conditions. Finally we will discuss the physical implications of the notion of local temperature, and present the practical applications of such a concept in a variety of nanosystems out of equilibrium.
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Submitted 24 October, 2019; v1 submitted 14 October, 2019;
originally announced October 2019.
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Comment on "$Φ$ memristor: Real memristor found" by F. Z. Wang, L. Li, L. Shi, H. Wu, and L. O. Chua [J. Appl. Phys. 125, 054504 (2019)]
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of…
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Wang et al. claim [J. Appl. Phys. 125, 054504 (2019)] that a current-carrying wire interacting with a magnetic core represents a memristor. Here, we demonstrate that this claim is false. We first show that such memristor "discovery" is based on incorrect physics, which does not even capture basic properties of magnetic core materials, such as their magnetic hysteresis. Moreover, the predictions of Wang et al.'s model contradict the experimental curves presented in their paper. Additionally, the theoretical pinched hysteresis loops presented by Wang et al. can not be reproduced if their model is used, and there are serious flaws in their "negative memristor" emulator design. Finally, a simple gedanken experiment shows that the proposed $Φ$-memristor would fail the memristor test we recently suggested in J. Phys. D: Appl. Phys. 52, 01LT01 (2019). The device "discovered" by Wang et al. is just an inductor with memory.
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Submitted 15 January, 2021; v1 submitted 26 September, 2019;
originally announced September 2019.
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An experimental proof that resistance-switching memories are not memristors
Authors:
J. Kim,
Y. V. Pershin,
M. Yin,
T. Datta,
M. Di Ventra
Abstract:
It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we…
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It has been suggested that all resistive-switching memory cells are memristors. The latter are hypothetical, ideal devices whose resistance, as originally formulated, depends only on the net charge that traverses them. Recently, an unambiguous test has been proposed [J. Phys. D: Appl. Phys. {\bf 52}, 01LT01 (2019)] to determine whether a given physical system is indeed a memristor or not. Here, we experimentally apply such a test to both in-house fabricated Cu-SiO2 and commercially available electrochemical metallization cells. Our results unambiguously show that electrochemical metallization memory cells are not memristors. Since the particular resistance-switching memories employed in our study share similar features with many other memory cells, our findings refute the claim that all resistance-switching memories are memristors. They also cast doubts on the existence of ideal memristors as actual physical devices that can be fabricated experimentally. Our results then lead us to formulate two memristor impossibility conjectures regarding the impossibility of building a model of physical resistance-switching memories based on the memristor model.
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Submitted 24 March, 2020; v1 submitted 16 September, 2019;
originally announced September 2019.
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Comment on "If it's pinched it's a memristor" by L. Chua [Semicond. Sci. Technol. 29, 104001 (2014)]
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a corres…
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In his paper "If it's pinched it's a memristor" [Semicond. Sci. Technol. 29, 104001 (2014)] L. Chua claims to extend the notion of memristor to all two-terminal resistive devices that show a hysteresis loop pinched at the origin. He also states that memcapacitors and meminductors can be defined by a trivial replacement of symbols in the memristor relations, and, therefore, there should be a correspondence between the hysteresis curves of different types of memory elements. This leads the author to the erroneous conclusion that charge-voltage curves of any memcapacitive devices should be pinched at the origin. The purpose of this Comment is to correct the wrong statements in Chua's paper, as well as to highlight some other inconsistencies in his reasoning. We also provide experimental evidence of a memcapacitive device showing non-pinched hysteresis.
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Submitted 6 May, 2019;
originally announced May 2019.
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Critical branching processes in digital memcomputing machines
Authors:
Sean R. B. Bearden,
Forrest C. Sheldon,
Massimiliano Di Ventra
Abstract:
Memcomputing is a novel computing paradigm that employs time non-locality (memory) to solve combinatorial optimization problems. It can be realized in practice by means of non-linear dynamical systems whose point attractors represent the solutions of the original problem. It has been previously shown that during the solution search digital memcomputing machines go through a transient phase of aval…
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Memcomputing is a novel computing paradigm that employs time non-locality (memory) to solve combinatorial optimization problems. It can be realized in practice by means of non-linear dynamical systems whose point attractors represent the solutions of the original problem. It has been previously shown that during the solution search digital memcomputing machines go through a transient phase of avalanches (instantons) that promote dynamical long-range order. By employing mean-field arguments we predict that the distribution of the avalanche sizes follows a Borel distribution typical of critical branching processes with exponent $τ= 3/2$. We corroborate this analysis by solving various random 3-SAT instances of the Boolean satisfiability problem. The numerical results indicate a power-law distribution with exponent $τ= 1.51 \pm 0.02$, in very good agreement with the mean-field analysis. This indicates that memcomputing machines self-tune to a critical state in which avalanches are characterized by a branching process, and that this state persists across the majority of their evolution.
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Submitted 22 October, 2019; v1 submitted 9 April, 2019;
originally announced April 2019.
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Digital Memcomputing: from Logic to Dynamics to Topology
Authors:
Massimiliano Di Ventra,
Igor V. Ovchinnikov
Abstract:
Digital memcomputing machines (DMMs) are a class of computational machines designed to solve combinatorial optimization problems. A practical realization of DMMs can be accomplished via electrical circuits of highly non-linear, point-dissipative dynamical systems engineered so that periodic orbits and chaos can be avoided. A given logic problem is first mapped into this type of dynamical system wh…
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Digital memcomputing machines (DMMs) are a class of computational machines designed to solve combinatorial optimization problems. A practical realization of DMMs can be accomplished via electrical circuits of highly non-linear, point-dissipative dynamical systems engineered so that periodic orbits and chaos can be avoided. A given logic problem is first mapped into this type of dynamical system whose point attractors represent the solutions of the original problem. A DMM then finds the solution via a succession of elementary instantons whose role is to eliminate solitonic configurations of logical inconsistency ("logical defects") from the circuit. By employing a supersymmetric theory of dynamics, a DMM can be described by a cohomological field theory that allows for computation of certain topological matrix elements on instantons that have the mathematical meaning of intersection numbers on instantons. We discuss the "dynamical" meaning of these matrix elements, and argue that the number of elementary instantons needed to reach the solution cannot exceed the number of state variables of DMMs, which in turn can only grow at most polynomially with the size of the problem. These results shed further light on the relation between logic, dynamics and topology in digital memcomputing.
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Submitted 18 March, 2019;
originally announced March 2019.
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Local-noise spectroscopy for non-equilibrium systems
Authors:
Gabriel Cabra,
Massimiliano Di Ventra,
Michael Galperin
Abstract:
We introduce the notion, and develop the theory of local-noise spectroscopy (LNS) - a tool to study the properties of systems far from equilibrium by means of flux density correlations. As a test bed, we apply it to biased molecular junctions. This tool naturally extends those based on local fluxes, while providing complementary information on the system. As examples of the rich phenomenology that…
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We introduce the notion, and develop the theory of local-noise spectroscopy (LNS) - a tool to study the properties of systems far from equilibrium by means of flux density correlations. As a test bed, we apply it to biased molecular junctions. This tool naturally extends those based on local fluxes, while providing complementary information on the system. As examples of the rich phenomenology that one can study with this approach, we show that LNS can be used to yield information on microscopic properties of bias-induced light emission in junctions, provide local resolution of intra-system interactions, and employed as a nano-thermometry tool. Although LNS may, at the moment, be difficult to realize experimentally, it can nonetheless be used as a powerful theoretical tool to infer a wide range of physical properties on a variety of systems of present interest.
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Submitted 17 December, 2018;
originally announced December 2018.
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Taming a non-convex landscape with dynamical long-range order: memcomputing Ising benchmarks
Authors:
Forrest Sheldon,
Fabio L. Traversa,
Massimiliano Di Ventra
Abstract:
Recent work on quantum annealing has emphasized the role of collective behavior in solving optimization problems. By enabling transitions of clusters of variables, such solvers are able to navigate their state space and locate solutions more efficiently despite having only local connections between elements. However, collective behavior is not exclusive to quantum annealers, and classical solvers…
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Recent work on quantum annealing has emphasized the role of collective behavior in solving optimization problems. By enabling transitions of clusters of variables, such solvers are able to navigate their state space and locate solutions more efficiently despite having only local connections between elements. However, collective behavior is not exclusive to quantum annealers, and classical solvers that display collective dynamics should also possess an advantage in navigating a non-convex landscape. Here, we give evidence that a benchmark derived from quantum annealing studies is solvable in polynomial time using digital memcomputing machines, which utilize a collection of dynamical components with memory to represent the structure of the underlying optimization problem. To illustrate the role of memory and clarify the structure of these solvers we propose a simple model of these machines that demonstrates the emergence of long-range order. This model, when applied to finding the ground state of the Ising frustrated-loop benchmarks, undergoes a transient phase of avalanches which can span the entire lattice and demonstrates a connection between long-range behavior and their probability of success. These results establish the advantages of computational approaches based on collective dynamics of continuous dynamical systems.
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Submitted 14 October, 2019; v1 submitted 8 October, 2018;
originally announced October 2018.
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A simple test for ideal memristors
Authors:
Y. V. Pershin,
M. Di Ventra
Abstract:
An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hyste…
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An ideal memristor is defined as a resistor with memory that, when subject to a time-dependent current, $I(t)$, its resistance $R_M(q)$ depends {\it only} on the charge $q$ that has flowed through it, so that its voltage response is $V(t)=R_M(q)I(t)$. It has been argued that a clear fingerprint of these ideal memristors is a pinched hysteresis loop in their I-V curves. However, a pinched I-V hysteresis loop is not a definitive test of whether a resistor with memory is truly an ideal memristor because such a property is shared also by other resistors whose memory depends on additional internal state variables, other than the charge. Here, we introduce a very simple and {\it unambiguous} test that can be utilized to check experimentally if a resistor with memory is indeed an ideal memristor. Our test is based on the duality property of a capacitor-memristor circuit whereby, for any initial resistance states of the memristor and any form of the applied voltage, the final state of an ideal memristor must be identical to its initial state, if the capacitor charge finally returns to its initial value. In actual experiments, a sufficiently wide range of voltage amplitudes and initial states are enough to perform the test. The proposed test can help resolve some long-standing controversies still existing in the literature about whether an ideal memristor does actually exist or it is a purely mathematical concept.
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Submitted 25 September, 2018; v1 submitted 19 June, 2018;
originally announced June 2018.
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Many-body multi-valuedness of particle-current variance in closed and open cold-atom systems
Authors:
Mekena Metcalf,
Chen-Yen Lai,
Massimiliano Di Ventra,
Chih-Chun Chien
Abstract:
The quantum variance of an observable is a fundamental quantity in quantum mechanics, and the variance provides additional information other than the average itself. By examining the relation between the particle-current variance $(δJ)^2$ and the average current $J$ in both closed and open interacting fermionic systems, we show the emergence of a multi-valued Lissajous curve between $δJ$ and $J$ d…
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The quantum variance of an observable is a fundamental quantity in quantum mechanics, and the variance provides additional information other than the average itself. By examining the relation between the particle-current variance $(δJ)^2$ and the average current $J$ in both closed and open interacting fermionic systems, we show the emergence of a multi-valued Lissajous curve between $δJ$ and $J$ due to interactions. As a closed system we considered the persistent current in a benzene-like lattice enclosing an effective magnetic flux and solved it by exact diagonalization. For the open system, the steady-state current flowing through a few lattice sites coupled to two particle reservoirs was investigated using a Lindblad equation. In both cases, interactions open a loop and change the topology of the corresponding $δJ$-$J$ Lissajous curve, showing that this effect is model-independent. We finally discuss how the predicted phenomena can be observed in ultracold atoms, thus offering an alternative way of probing the dynamics of many-body systems.
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Submitted 16 May, 2018;
originally announced May 2018.
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Tunable current circulation in triangular quantum-dot metastructures
Authors:
Chen-Yen Lai,
Massimiliano Di Ventra,
Michael Scheibner,
Chih-Chun Chien
Abstract:
Advances in fabrication and control of quantum dots allow the realization of metastructures that may exhibit novel electrical transport phenomena. Here, we investigate the electrical current passing through one such metastructure, a system composed of quantum dots placed at the vertices of a triangle. The wave natural of quantum particles leads to internal current circulation within the metastruct…
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Advances in fabrication and control of quantum dots allow the realization of metastructures that may exhibit novel electrical transport phenomena. Here, we investigate the electrical current passing through one such metastructure, a system composed of quantum dots placed at the vertices of a triangle. The wave natural of quantum particles leads to internal current circulation within the metastructure in the absence of any external magnetic field. We uncover the relation between its steady-state total current and the internal circulation. By calculating the electronic correlations in quantum transport exactly, we present phase diagrams showing where different types of current circulation can be found as a function of the correlation strength and the coupling between the quantum dots. Finally, we show that the regimes of current circulation can be further enhanced or reduced depending on the local spatial distribution of the interactions, suggesting a single-particle scattering mechanism is at play even in the strongly-correlated regime. We suggest experimental realizations of actual quantum-dot metastructures where our predictions can be directly tested.
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Submitted 29 March, 2018; v1 submitted 6 February, 2018;
originally announced February 2018.
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Surface effects on ionic Coulomb blockade in nanometer-size pores
Authors:
Hiroya Tanaka,
Hideo Iizuka,
Yuriy V. Pershin,
Massimiliano Di Ventra
Abstract:
Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and str…
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Ionic Coulomb blockade in nanopores is a phenomenon that shares some similarities but also differences with its electronic counterpart. Here, we investigate extensively this phenomenon using all-atom molecular dynamics of ionic transport through nanopores of about one nanometer in diameter and up to several nanometers in length. Our goal is to better understand the role of atomic roughness and structure of the pore walls in the ionic Coulomb blockade. Our numerical results reveal the following general trends. First, the nanopore selectivity changes with its diameter, and the nanopore position in the membrane influences the current strength. Second, the ionic transport through the nanopore takes place in a hopping-like fashion over a set of discretized states caused by local electric fields due to membrane atoms. In some cases, this creates a slow-varying "crystal-like" structure of ions inside the nanopore. Third, while at a given voltage, the resistance of the nanopore depends on its length, the slope of this dependence appears to be independent of the molarity of ions. An effective kinetic model that captures the ionic Coulomb blockade behavior observed in MD simulations is formulated.
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Submitted 27 November, 2017;
originally announced November 2017.
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Instantons in self-organizing logic gates
Authors:
Sean R. B. Bearden,
Haik Manukian,
Fabio L. Traversa,
Massimiliano Di Ventra
Abstract:
Self-organizing logic is a recently-suggested framework that allows the solution of Boolean truth tables "in reverse," i.e., it is able to satisfy the logical proposition of gates regardless to which terminal(s) the truth value is assigned ("terminal-agnostic logic"). It can be realized if time non-locality (memory) is present. A practical realization of self-organizing logic gates (SOLGs) can be…
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Self-organizing logic is a recently-suggested framework that allows the solution of Boolean truth tables "in reverse," i.e., it is able to satisfy the logical proposition of gates regardless to which terminal(s) the truth value is assigned ("terminal-agnostic logic"). It can be realized if time non-locality (memory) is present. A practical realization of self-organizing logic gates (SOLGs) can be done by combining circuit elements with and without memory. By employing one such realization, we show, numerically, that SOLGs exploit elementary instantons to reach equilibrium points. Instantons are classical trajectories of the non-linear equations of motion describing SOLGs, and connect topologically distinct critical points in the phase space. By linear analysis at those points, we show that these instantons connect the initial critical point of the dynamics, with at least one unstable direction, directly to the final fixed point. We also show that the memory content of these gates only affects the relaxation time to reach the logically consistent solution. Finally, we demonstrate, by solving the corresponding stochastic differential equations, that since instantons connect critical points, noise and perturbations may change the instanton trajectory in the phase space, but not the initial and final critical points. Therefore, even for extremely large noise levels, the gates self-organize to the correct solution. Our work provides a physical understanding of, and can serve as an inspiration for, new models of bi-directional logic gates that are emerging as important tools in physics-inspired, unconventional computing.
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Submitted 28 March, 2018; v1 submitted 29 August, 2017;
originally announced August 2017.
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Josephson thermal memory
Authors:
Claudio Guarcello,
Paolo Solinas,
Alessandro Braggio,
Massimiliano Di Ventra,
Francesco Giazotto
Abstract:
We propose a superconducting thermal memory device that exploits the thermal hysteresis in a flux-controlled, temperature-biased superconducting quantum-interference device (SQUID). This system reveals a flux-controllable temperature bistability, which can be used to define two well-distinguishable thermal logic states. We discuss a suitable writing-reading procedure for these memory states. The t…
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We propose a superconducting thermal memory device that exploits the thermal hysteresis in a flux-controlled, temperature-biased superconducting quantum-interference device (SQUID). This system reveals a flux-controllable temperature bistability, which can be used to define two well-distinguishable thermal logic states. We discuss a suitable writing-reading procedure for these memory states. The time of the memory writing operation is expected to be on the order of ~0.2 ns, for a Nb-based SQUID in thermal contact with a phonon bath at 4:2 K. We suggest a non-invasive readout scheme for the memory states based on the measurement of the effective resonance frequency of a tank circuit inductively coupled to the SQUID. The proposed device paves the way for a practical implementation of thermal logic and computation. The advantage of this proposal is that it represents also an example of harvesting thermal energy in superconducting circuits.
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Submitted 19 January, 2018; v1 submitted 16 June, 2017;
originally announced June 2017.
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Phase-dependent noise in Josephson junctions
Authors:
Forrest Sheldon,
Sebastiano Peotta,
Massimiliano Di Ventra
Abstract:
In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character and thus should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current aut…
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In addition to the usual superconducting current, Josephson junctions (JJs) support a phase-dependent conductance related to the retardation effect of tunneling quasi-particles. This introduces a dissipative current with a memory-resistive (memristive) character and thus should also affect the current noise. By means of the microscopic theory of tunnel junctions we compute the complete current autocorrelation function of a Josephson tunnel junction and show that this memristive component gives rise to a non-stationary, phase-dependent noise. As a consequence, dynamic and thermal noise necessarily show a phase dependence otherwise absent in nondissipative JJ models. This phase dependence may be realized experimentally as a hysteresis effect if the unavoidable time averaging of the experimental probe is shorter than the period of the Josephson phase.
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Submitted 16 February, 2017;
originally announced February 2017.
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Hysteretic superconducting heat-flux quantum modulator
Authors:
Claudio Guarcello,
Paolo Solinas,
Massimiliano Di Ventra,
Francesco Giazotto
Abstract:
We discuss heat transport in a thermally-biased SQUID in the presence of an external magnetic flux, when a non-negligible inductance of the SQUID ring is taken into account. A properly sweeping driving flux causes the thermal current to modulate and behave hysteretically. The response of this device is analysed as a function of both the hysteresis parameter and degree of asymmetry of the SQUID, hi…
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We discuss heat transport in a thermally-biased SQUID in the presence of an external magnetic flux, when a non-negligible inductance of the SQUID ring is taken into account. A properly sweeping driving flux causes the thermal current to modulate and behave hysteretically. The response of this device is analysed as a function of both the hysteresis parameter and degree of asymmetry of the SQUID, highlighting the parameter range over which hysteretic behavior is observable. Markedly, also the temperature of the SQUID shows hysteretic evolution, with sharp transitions characterized by temperature jumps up to, e.g., ~ 38mK for a realistic Al-based setup. In view of these results, the proposed device can effectively find application as a temperature-based superconducting memory element, working even at GHz frequencies by suitably choosing the superconductor on which the device is based.
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Submitted 21 March, 2017; v1 submitted 23 January, 2017;
originally announced January 2017.
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Solitonic Josephson-based meminductive systems
Authors:
Claudio Guarcello,
Paolo Solinas,
Massimiliano Di Ventra,
Francesco Giazotto
Abstract:
Memristors, memcapacitors, and meminductors, collectively called memelements, represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their constituent variables, under the effect of an external time-dependent perturbation, is their distinctive fingerprint. In turn, this feature endows them with the ab…
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Memristors, memcapacitors, and meminductors, collectively called memelements, represent an innovative generation of circuit elements whose properties depend on the state and history of the system. The hysteretic behavior of one of their constituent variables, under the effect of an external time-dependent perturbation, is their distinctive fingerprint. In turn, this feature endows them with the ability to both store and process information on the same physical location, a property that is expected to benefit many applications ranging from unconventional computing to adaptive electronics to robotics, to name just a few. For all these types of applications, it is important to find appropriate memelements that combine a wide range of memory states (multi-state memory), long memory retention times, and protection against unavoidable noise. Although several physical systems belong to the general class of memelements, few of them combine all of these important physical features in a single component. Her we demonstrate theoretically a superconducting memory structure based on solitonic long Josephson junctions (LJJs). We show that the Josephson critical current of the junction behaves hysteretically as an external magnetic field is properly swept. According to the hysteretic path displayed by the critical current, a LJJ can be used as a multi-state memory, with a controllable number of available states. In addition, since solitons are at the core of its operation, this system provides an intrinsic topological protection against external perturbations. Solitonic Josephson-based memelements may find applications as memories, and in other emerging areas such as memcomputing, i.e., computing directly in/by the memory.
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Submitted 21 October, 2016;
originally announced October 2016.
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An energy-resolved atomic scanning probe
Authors:
Daniel Gruss,
Chih-Chun Chien,
Julio Barreiro,
Massimiliano Di Ventra,
Michael Zwolak
Abstract:
We propose a method to probe the local density of states (LDOS) of atomic systems that provides both spatial and energy resolution. The method combines atomic and tunneling techniques to supply a simple, yet quantitative and operational, definition of the LDOS for both interacting and non-interacting systems: It is the rate at which particles can be siphoned from the system of interest by a narrow…
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We propose a method to probe the local density of states (LDOS) of atomic systems that provides both spatial and energy resolution. The method combines atomic and tunneling techniques to supply a simple, yet quantitative and operational, definition of the LDOS for both interacting and non-interacting systems: It is the rate at which particles can be siphoned from the system of interest by a narrow energy band of non-interacting states contacted locally to the many-body system of interest. Ultracold atoms in optical lattices are a natural platform for implementing this broad concept to visualize the energy and spatial dependence of the atom density in interacting, inhomogeneous lattices. This includes models of strongly correlated condensed matter systems, as well as ones with non-trivial topologies.
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Submitted 21 November, 2018; v1 submitted 6 October, 2016;
originally announced October 2016.
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Topological field theory and computing with instantons
Authors:
Massimiliano Di Ventra,
Fabio L. Traversa,
Igor V. Ovchinnikov
Abstract:
Chern-Simons topological field theories TFTs are the only TFTs that have already found application in the description of some exotic strongly-correlated electron systems and the corresponding concept of topological quantum computing. Here, we show that TFTs of another type, specifically the gauge-field-less Witten-type TFTs known as topological sigma models, describe the recently proposed digital…
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Chern-Simons topological field theories TFTs are the only TFTs that have already found application in the description of some exotic strongly-correlated electron systems and the corresponding concept of topological quantum computing. Here, we show that TFTs of another type, specifically the gauge-field-less Witten-type TFTs known as topological sigma models, describe the recently proposed digital memcomputing machines (DMMs) - engineered dynamical systems with point attractors being the solutions of the corresponding logic circuit that solves a specific task. This result derives from the recent finding that any stochastic differential equation possesses a topological supersymmetry, and the realization that the solution search by a DMM proceeds via an instantonic phase. Certain TFT correlators in DMMs then reveal the presence of a transient long-range order both in space and time, associated with the effective breakdown of the topological supersymmetry by instantons. The ensuing non-locality and the low dimensionality of instantons are the physical reasons why DMMs can solve complex problems efficiently, despite their non-quantum character. We exemplify these results with the solution of prime factorization.
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Submitted 11 September, 2016;
originally announced September 2016.
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The complex dynamics of memristive circuits: analytical results and universal slow relaxation
Authors:
Francesco Caravelli,
Fabio Lorenzo Traversa,
Massimiliano Di Ventra
Abstract:
Networks with memristive elements (resistors with memory) are being explored for a variety of applications ranging from unconventional computing to models of the brain. However, analytical results that highlight the role of the graph connectivity on the memory dynamics are still a few, thus limiting our understanding of these important dynamical systems. In this paper, we derive an exact matrix eq…
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Networks with memristive elements (resistors with memory) are being explored for a variety of applications ranging from unconventional computing to models of the brain. However, analytical results that highlight the role of the graph connectivity on the memory dynamics are still a few, thus limiting our understanding of these important dynamical systems. In this paper, we derive an exact matrix equation of motion that takes into account all the network constraints of a purely memristive circuit, and we employ it to derive analytical results regarding its relaxation properties. We are able to describe the memory evolution in terms of orthogonal projection operators onto the subspace of fundamental loop space of the underlying circuit. This orthogonal projection explicitly reveals the coupling between the spatial and temporal sectors of the memristive circuits and compactly describes the circuit topology. For the case of disordered graphs, we are able to explain the emergence of a power law relaxation as a superposition of exponential relaxation times with a broad range of scales using random matrices. This power law is also {\it universal}, namely independent of the topology of the underlying graph but dependent only on the density of loops. In the case of circuits subject to alternating voltage instead, we are able to obtain an approximate solution of the dynamics, which is tested against a specific network topology. These result suggest a much richer dynamics of memristive networks than previously considered.
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Submitted 2 November, 2016; v1 submitted 30 August, 2016;
originally announced August 2016.
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The thermodynamic meaning of local temperature of nonequilibrium open quantum systems
Authors:
LvZhou Ye,
Xiao Zheng,
YiJing Yan,
Massimiliano Di Ventra
Abstract:
Measuring the local temperature of nanoscale systems out of equilibrium has emerged as a new tool to study local heating effects and other local thermal properties of systems driven by external fields. Although various experimental protocols and theoretical definitions have been proposed to determine the local temperature, the thermodynamic meaning of the measured or defined quantities remains unc…
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Measuring the local temperature of nanoscale systems out of equilibrium has emerged as a new tool to study local heating effects and other local thermal properties of systems driven by external fields. Although various experimental protocols and theoretical definitions have been proposed to determine the local temperature, the thermodynamic meaning of the measured or defined quantities remains unclear. By performing analytical and numerical analysis of bias-driven quantum dot systems both in the noninteracting and strongly-correlated regimes, we elucidate the underlying physical meaning of local temperature as determined by two definitions: the zero-current condition that is widely used but not measurable, and the minimal-perturbation condition that is experimentally realizable. We show that, unlike the zero-current one, the local temperature determined by the minimalperturbation protocol establishes a quantitative correspondence between the nonequilibrium system of interest and a reference equilibrium system, provided the probed system observable and the related electronic excitations are fully local. The quantitative correspondence thus allows the well-established thermodynamic concept to be extended to nonequilibrium situations.
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Submitted 27 August, 2016;
originally announced August 2016.
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Functional theories of thermoelectric phenomena
Authors:
F. G. Eich,
M. Di Ventra,
G. Vignale
Abstract:
We review the progress that has been recently made in the application of time-dependent density functional theory to thermoelectric phenomena. As the field is very young, we emphasize open problems and fundamental issues. We begin by introducing the formal structure of \emph{thermal density functional theory}, a density functional theory with two basic variables -- the density and the energy densi…
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We review the progress that has been recently made in the application of time-dependent density functional theory to thermoelectric phenomena. As the field is very young, we emphasize open problems and fundamental issues. We begin by introducing the formal structure of \emph{thermal density functional theory}, a density functional theory with two basic variables -- the density and the energy density -- and two conjugate fields -- the ordinary scalar potential and Luttinger's thermomechanical potential. The static version of this theory is contrasted with the familiar finite-temperature density functional theory, in which only the density is a variable. We then proceed to constructing the full time-dependent non equilibrium theory, including the practically important Kohn-Sham equations that go with it. The theory is shown to recover standard results of the Landauer theory for thermal transport in the steady state, while showing greater flexibility by allowing a description of fast thermal response, temperature oscillations and related phenomena. Several results are presented here for the first time, i.e., the proof of invertibility of the thermal response function in the linear regime, the full expression of the thermal currents in the presence of Luttinger's thermomechanical potential, an explicit prescription for the evaluation of the Kohn-Sham potentials in the adiabatic local density approximation, a detailed discussion of the leading dissipative corrections to the adiabatic local density approximation and the thermal corrections to the resistivity that follow from it.
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Submitted 19 July, 2016;
originally announced July 2016.
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Dehydration as a Universal Mechanism for Ion Selectivity in Graphene and Other Atomically Thin Pores
Authors:
Subin Sahu,
Massimiliano Di Ventra,
Michael Zwolak
Abstract:
Ion channels play a key role in regulating cell behavior and in electrical signaling. In these settings, polar and charged functional groups -- as well as protein response -- compensate for dehydration in an ion-dependent way, giving rise to the ion selective transport critical to the operation of cells. Dehydration, though, yields ion-dependent free-energy barriers and thus is predicted to give r…
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Ion channels play a key role in regulating cell behavior and in electrical signaling. In these settings, polar and charged functional groups -- as well as protein response -- compensate for dehydration in an ion-dependent way, giving rise to the ion selective transport critical to the operation of cells. Dehydration, though, yields ion-dependent free-energy barriers and thus is predicted to give rise to selectivity by itself. However, these barriers are typically so large that they will suppress the ion currents to undetectable levels. Here, we establish that graphene displays a measurable dehydration-only mechanism for selectivity of $\mathrm{K}^+$ over $\mathrm{Cl}^-$. This fundamental mechanism -- one that depends only on the geometry and hydration -- is the starting point for selectivity for all channels and pores. Moreover, while we study selectivity of $\mathrm{K}^+$ over $\mathrm{Cl}^-$, we find that dehydration-based selectivity functions for all ions, i.e., cation over cation selectivity (e.g., $\mathrm{K}^+$ over $\mathrm{Na}^+$). Its likely detection in graphene pores resolves conflicting experimental results, as well as presents a new paradigm for characterizing the operation of ion channels and engineering molecular/ionic selectivity in filtration and other applications.
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Submitted 13 July, 2017; v1 submitted 10 May, 2016;
originally announced May 2016.
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Quantum Memristors with Superconducting Circuits
Authors:
J. Salmilehto,
F. Deppe,
M. Di Ventra,
M. Sanz,
E. Solano
Abstract:
Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduc…
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Memristors are resistive elements retaining information of their past dynamics. They have garnered substantial interest due to their potential for representing a paradigm change in electronics, information processing and unconventional computing. Given the advent of quantum technologies, a design for a quantum memristor with superconducting circuits may be envisaged. Along these lines, we introduce such a quantum device whose memristive behavior arises from quasiparticle-induced tunneling when supercurrents are cancelled. For realistic parameters, we find that the relevant hysteretic behavior may be observed using current state-of-the-art measurements of the phase-driven tunneling current. Finally, we develop suitable methods to quantify memory retention in the system.
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Submitted 16 February, 2017; v1 submitted 14 March, 2016;
originally announced March 2016.
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Temperature-driven transient charge and heat currents in nanoscale conductors
Authors:
F. G. Eich,
M. Di Ventra,
G. Vignale
Abstract:
We analyze the short-time behavior of the heat and charge currents through nanoscale conductors exposed to a temperature gradient. To this end, we employ Luttinger's thermomechanical potential to simulate a sudden change of temperature at one end of the conductor. We find that the direction of the charge current through an impurity is initially opposite to the direction of the charge current in th…
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We analyze the short-time behavior of the heat and charge currents through nanoscale conductors exposed to a temperature gradient. To this end, we employ Luttinger's thermomechanical potential to simulate a sudden change of temperature at one end of the conductor. We find that the direction of the charge current through an impurity is initially opposite to the direction of the charge current in the steady-state limit. Furthermore, we investigate the transient propagation of energy and particle density driven by a temperature variation through a conducting nanowire. Interestingly, we find that the velocity of the wavefronts of, both, the particle and the energy wave have the same constant value, insensitive to changes in the average electronic density. In the steady-state regime, we find that, at low temperatures, the local temperature and potential, as measured by a floating probe lead, exhibit characteristic oscillations due to quantum interference, with a periodicity that corresponds to half the Fermi wavelength of the electrons.
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Submitted 22 April, 2016; v1 submitted 28 January, 2016;
originally announced January 2016.
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Phase Transitions and Duality in Adiabatic Memristive Networks
Authors:
Forrest C. Sheldon,
Massimiliano Di Ventra
Abstract:
The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a first-order phase transition in the conductivity…
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The development of neuromorphic systems based on memristive elements - resistors with memory - requires a fundamental understanding of their collective dynamics when organized in networks. Here, we study an experimentally inspired model of two-dimensional disordered memristive networks subject to a slowly ramped voltage and show that they undergo a first-order phase transition in the conductivity for sufficiently high values of memory, as quantified by the memristive ON/OFF ratio. We investigate the consequences of this transition for the memristive current-voltage characteristics both through simulation and theory, and uncover a duality between forward and reverse switching processes that has also been observed in several experimental systems of this sort. Our work sheds considerable light on the statistical properties of memristive networks that are presently studied both for unconventional computing and as models of neural networks.
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Submitted 11 August, 2016; v1 submitted 21 January, 2016;
originally announced January 2016.
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Polynomial-time solution of prime factorization and NP-hard problems with digital memcomputing machines
Authors:
Fabio L. Traversa,
Massimiliano Di Ventra
Abstract:
We introduce a class of digital machines we name Digital Memcomputing Machines (DMMs) able to solve a wide range of problems including Non-deterministic Polynomial (NP) ones with polynomial resources (in time, space and energy). An abstract DMM with this power must satisfy a set of compatible mathematical constraints underlying its practical realization. We initially prove this by introducing the…
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We introduce a class of digital machines we name Digital Memcomputing Machines (DMMs) able to solve a wide range of problems including Non-deterministic Polynomial (NP) ones with polynomial resources (in time, space and energy). An abstract DMM with this power must satisfy a set of compatible mathematical constraints underlying its practical realization. We initially prove this by introducing the complexity classes for these machines. We then make a connection with dynamical systems theory. This leads to the set of physical constraints for poly-resource resolvability. Once the mathematical requirements have been assessed, we propose a practical scheme to solve the above class of problems based on the novel concept of self-organizing logic gates and circuits (SOLCs). These are logic gates and circuits able to accept input signals from any terminal, without distinction between conventional input and output terminals. They can solve boolean problems by self-organizing into their solution. They can be fabricated either with circuit elements with memory (such as memristors) and/or standard MOS technology. Using tools of functional analysis, we prove mathematically the following constraints for the poly-resource resolvability: i) SOLCs possess a global attractor; ii) their only equilibrium points are the solutions of the problems to solve; iii) the system converges exponentially fast to the solutions; iv) the equilibrium convergence rate scales at most polynomially with input size. We finally provide arguments that periodic orbits and strange attractors cannot coexist with equilibria. As examples we show how to solve the prime factorization and the NP-hard version of the subset-sum problem. Since DMMs map integers into integers they are robust against noise, and hence scalable. We finally discuss the implications of the DMM realization through SOLCs to the NP=P question related to...
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Submitted 22 April, 2016; v1 submitted 16 December, 2015;
originally announced December 2015.
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Reconfigurable Transmission Lines with Memcapacitive Materials
Authors:
Y. V. Pershin,
V. A. Slipko,
M. Di Ventra
Abstract:
We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical a…
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We study transmission lines made of memory capacitive (memcapacitive) materials. The transmission properties of these lines can be adjusted on demand using an appropriate sequence of pulses. In particular, we demonstrate a pulse combination that creates a periodic modulation of dielectric properties along the line. Such a structure resembles a distributed Bragg reflector having important optical applications. We present simulation results demonstrating all major steps of such a reconfigurable device operation including reset, programming and transmission of small amplitude signals. The proposed reconfigurable transmission lines employ only passive memory materials and can be realized using available memcapacitive devices.
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Submitted 30 November, 2015;
originally announced November 2015.
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Quantum Memristors
Authors:
P. Pfeiffer,
I. L. Egusquiza,
M. Di Ventra,
M. Sanz,
E. Solano
Abstract:
Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing…
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Technology based on memristors, resistors with memory whose resistance depends on the history of the crossing charges, has lately enhanced the classical paradigm of computation with neuromorphic architectures. However, in contrast to the known quantized models of passive circuit elements, such as inductors, capacitors or resistors, the design and realization of a quantum memristor is still missing. Here, we introduce the concept of a quantum memristor as a quantum dissipative device, whose decoherence mechanism is controlled by a continuous-measurement feedback scheme, which accounts for the memory. Indeed, we provide numerical simulations showing that memory effects actually persist in the quantum regime. Our quantization method, specifically designed for superconducting circuits, may be extended to other quantum platforms, allowing for memristor-type constructions in different quantum technologies. The proposed quantum memristor is then a building block for neuromorphic quantum computation and quantum simulations of non-Markovian systems.
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Submitted 11 January, 2017; v1 submitted 6 November, 2015;
originally announced November 2015.