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The electronic structure of a doped Mott-Hubbard surface
Authors:
Mattia Iannetti,
Silvio Modesti,
Giovanni Di Santo,
Marco Caputo,
Polina M. Sheverdyaeva,
Paolo Moras,
Fabio Chiapolino,
Tommaso Cea,
Cesare Tresca,
Erio Tosatti,
Gianni Profeta
Abstract:
The Sn/Si(111)-({\sqrt}3{\times}{\sqrt}3)R30° surface, a 2D Mott insulator, has long been predicted and then found experimetally to metallize and even turn superconducting upon boron doping. In order to clarify the structural, spectroscopic and theoretical details of that evolution, here we present ARPES data supplementing morphology and scanning tunneling measurements. These combined experimental…
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The Sn/Si(111)-({\sqrt}3{\times}{\sqrt}3)R30° surface, a 2D Mott insulator, has long been predicted and then found experimetally to metallize and even turn superconducting upon boron doping. In order to clarify the structural, spectroscopic and theoretical details of that evolution, here we present ARPES data supplementing morphology and scanning tunneling measurements. These combined experimental results are compared with predictions from a variety of electronic structure approaches, mostly density functional DFT+U, but not neglecting Mott-Hubbard models, both ordered and disordered. These theoretical pictures address different spectroscopic aspects, including the 2D Fermi surface, the Hubbard bands, etc. While no single picture account for all observations at once,the emergent hypothesis compatible with all data is that metallization arises from sub-subsurface boron doping, additional to the main standard subsurface boron geometry, that would leave the surface insulating. These results advance the indispensable frame for the further understanding of this fascinating system.
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Submitted 24 June, 2025;
originally announced June 2025.
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Mastering the growth of antimonene on Bi2Se3: strategies and insights
Authors:
Roberto Flammini,
Conor Hogan,
Stefano Colonna,
Fabio Ronci,
Mauro Satta,
Marco Papagno,
Ziya S. Aliev,
Sergey V. Eremeev,
Evgueni V. Chulkov,
Zipporah R. Benher,
Sandra Gardonio,
Luca Petaccia,
Giovanni Di Santo,
Carlo Carbone,
Paolo Moras,
Polina M. Sheverdyaeva
Abstract:
Antimonene, the two-dimensional phase of antimony, appears in two distinct allotropes when epitaxially grown on Bi2Se3: the puckered asymmetric washboard (α) and buckled honeycomb (β) bilayer structures. As-deposited antimony films exhibit varying proportions of single α and β structures. We identify the conditions necessary for ordered, pure-phase growth of single to triple β-antimonene bilayers.…
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Antimonene, the two-dimensional phase of antimony, appears in two distinct allotropes when epitaxially grown on Bi2Se3: the puckered asymmetric washboard (α) and buckled honeycomb (β) bilayer structures. As-deposited antimony films exhibit varying proportions of single α and β structures. We identify the conditions necessary for ordered, pure-phase growth of single to triple β-antimonene bilayers. Additionally, we determine their electronic structure, work function, and characteristic core-level binding energies, offering an explanation for the relatively large chemical shifts observed among the different phases. This study not only establishes a protocol for achieving a single β phase of antimonene but also provides key signatures for distinguishing between the different allotropes using standard spectroscopic and microscopic techniques.
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Submitted 25 February, 2025;
originally announced February 2025.
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Molecular order induced charge transfer in a C$_{60}$-topological insulator moiré heterostructure
Authors:
Ram Prakash Pandeya,
Konstantin P. Shchukin,
Yannic Falke,
Gregor Mussler,
Jalil Abdur Rehman,
Nicolae Atodiresei,
Alexander V. Fedorov,
Boris V. Senkovskiy,
Daniel Jansen,
Giovanni Di Santo,
Luca Petaccia,
Alexander Grüneis
Abstract:
We synthesize and spectroscopically investigate monolayer C$_{60}$ on the topological insulator (TI) Bi$_4$Te$_3$. This C$_{60}$/Bi$_4$Te$_3$ heterostructure is characterized by excellent translational order in a novel (4 x 4) C$_{60}$ superstructure on a (9 x 9) unit of Bi$_4$Te$_3$. We measure the full two-dimensional energy band structure of C$_{60}$/Bi$_4$Te$_3$ using angle-resolved photoemiss…
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We synthesize and spectroscopically investigate monolayer C$_{60}$ on the topological insulator (TI) Bi$_4$Te$_3$. This C$_{60}$/Bi$_4$Te$_3$ heterostructure is characterized by excellent translational order in a novel (4 x 4) C$_{60}$ superstructure on a (9 x 9) unit of Bi$_4$Te$_3$. We measure the full two-dimensional energy band structure of C$_{60}$/Bi$_4$Te$_3$ using angle-resolved photoemission spectroscopy (ARPES). We find that C$_{60}$ accepts electrons from the TI at room temperature but no charge transfer occurs at low temperatures. We unravel this peculiar behaviour by Raman spectroscopy of C$_{60}$/Bi$_4$Te$_3$ and density functional theory (DFT) calculations of the electronegativity of C$_{60}$. Both methods are sensitive to orientational order of C$_{60}$. At low temperatures, Raman spectroscopy shows a dramatic intensity increase of the C$_{60}$ Raman signal, evidencing a transition to a rotationally ordered state. DFT reveals that the orientational order of C$_{60}$ at low temperatures has a higher electron affinity than at high temperatures. These results neatly explain the temperature-dependent charge transfer observed in ARPES. Our conclusions are supported by the appearance of a strong photoluminescence from C$_{60}$/Bi$_4$Te$_3$ at low temperatures.
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Submitted 15 May, 2024;
originally announced May 2024.
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Unravelling the Band Structure and Orbital Character of a $π$-Conjugated 2D Graphdiyne-Based Organometallic Network
Authors:
Paolo D'Agosta,
Simona Achilli,
Francesco Tumino,
Alessio Orbelli Biroli,
Giovanni Di Santo,
Luca Petaccia,
Giovanni Onida,
Andrea Li Bassi,
Jorge Lobo-Checa,
Carlo S. Casari
Abstract:
Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importa…
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Graphdiyne-based carbon systems generate intriguing layered sp-sp$^2$ organometallic lattices, characterized by flexible acetylenic groups connecting planar carbon units through metal centers. At their thinnest limit, they can result in two-dimensional (2D) organometallic networks exhibiting unique quantum properties and even confining the surface states of the substrate, which is of great importance for fundamental studies. In this work, we present the on-surface synthesis of a highly crystalline 2D organometallic network grown on Ag(111). The electronic structure of this mixed honeycomb-kagome arrangement - investigated by angle-resolved photoemission spectroscopy and scanning tunneling spectroscopy - reveals a strong electronic conjugation within the network, leading to the formation of two intense electronic band-manifolds. In comparison to theoretical density functional theory calculations, we observe that these bands exhibit a well-defined orbital character that can be associated with distinct regions of the sp-sp$^2$ monomers. Moreover, we find that the halogen by-products resulting from the network formation locally affect the pore-confined states, causing a significant energy shift. This work contributes to the understanding of the growth and electronic structure of graphdiyne-like 2D networks, providing insights into the development of novel carbon materials beyond graphene with tailored properties.
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Submitted 10 April, 2024;
originally announced April 2024.
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Interfacing Quantum Spin Hall and Quantum Anomalous Hall insulators: Bi bilayer on MnBi$_2$Te$_4$-family materials
Authors:
I. I. Klimovskikh,
S. V. Eremeev,
D. A. Estyunin,
S. O. Filnov,
K. Shimada,
V. A. Golyashov,
O. E. Tereshchenko,
K. A. Kokh,
A. S. Frolov,
A. I. Sergeev,
V. S. Stolyarov,
V. Miksic Trontl,
L. Petaccia,
G. Di Santo,
M. Tallarida,
J. Dai,
S. Blanco-Canosa,
T. Valla,
A. M. Shikin,
E. V. Chulkov
Abstract:
Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifi…
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Meeting of non-trivial topology with magnetism results in novel phases of matter, such as Quantum Anomalous Hall (QAH) or axion insulator phases. Even more exotic states with high and tunable Chern numbers are expected at the contact of intrinsic magnetic topological insulators (IMTIs) and 2D topological insulators (TIs).Here we synthesize a heterostructures composed of 2D TI and 3D IMTIs, specifically of bismuth bilayer on top of MnBi$_2$Te$_4$-family of compounds and study their electronic properties by means of angle-resolved photoelectron spectroscopy (ARPES) and density functional theory (DFT). The epitaxial interface is characterized by hybridized Bi and IMTI electronic states. The Bi bilayer-derived states on different members of MnBi$_2$Te$_4$-family of materials are similar, except in the region of mixing with the topological surface states of the substrate. In that region, the new, substrate dependent interface Dirac state is observed. Our \emph{ab initio} calculations show rich interface phases with emergence of exchange split 1D edge states, making the Bi/IMTI heterostructures promising playground for observation of novel members in the family of quantum Hall effects.
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Submitted 18 March, 2024;
originally announced March 2024.
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Observation of Dirac-like surface state bands on the top surface of BiSe
Authors:
H. Lohani,
K. Majhi,
R. Ganesan,
S. Gonzalez,
G. Di Santo,
L. Petaccia,
P. S. Anil Kumar,
B. R. Sekhar
Abstract:
Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron spectroscopy to study its topological nature. Dirac like linearly dispersive surface state bands are observed on the 001 surface of BiSe and Sb doped BiSe, similar to Bi2Se3. Moreover, the lower part of the SSBs buries…
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Two quintuple layers of strong topological insulator Bi2Se3 are coupled by a Bi bilayer in BiSe crystal. We investigated its electronic structure using angle resolved photoelectron spectroscopy to study its topological nature. Dirac like linearly dispersive surface state bands are observed on the 001 surface of BiSe and Sb doped BiSe, similar to Bi2Se3. Moreover, the lower part of the SSBs buries deep in the bulk valence band. Overlap region between the SSBs and BVB is large in Sb doped system and the SSBs deviate from the Dirac like linear dispersion in this region.
These results highlight the role of interlayer coupling between the Bi bilayer and the Bi2Se3 QLs.
Furthermore, we observed a large intensity imbalance in the SSBs located at the positive and negative k parallel directions. This asymmetry pattern gradually reverses as the excitation energy scans from low 14eV to high 34eV value. However, we did not observe signal of surface magnetization resulting from the intensity imbalance in SSBs due to hole-generated uncompensated spin accumulation in the photoexcitation process. The main reason for this could be the faster relaxation process for photo hole due to the presence of the Bi bilayer between the adjacent Bi2Se3 QLs. The observed photon energy dependent intensity variation could be a signature of the mixing between the spin and the orbit texture of the SSBs.
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Submitted 29 October, 2023;
originally announced October 2023.
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Magnetic Dirac semimetal state of (Mn,Ge)Bi$_2$Te$_4$
Authors:
Alexander S. Frolov,
Dmitry Yu. Usachov,
Artem V. Tarasov,
Alexander V. Fedorov,
Kirill A. Bokai,
Ilya Klimovskikh,
Vasily S. Stolyarov,
Anton I. Sergeev,
Alexander N. Lavrov,
Vladimir A. Golyashov,
Oleg E. Tereshchenko,
Giovanni Di Santo,
Luca Petaccia,
Oliver J. Clark,
Jaime Sanchez-Barriga,
Lada V. Yashina
Abstract:
For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dep…
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For quantum electronics, the possibility to finely tune the properties of magnetic topological insulators (TIs) is a key issue. We studied solid solutions between two isostructural Z$_2$ TIs, magnetic MnBi$_2$Te$_4$ and nonmagnetic GeBi$_2$Te$_4$, with Z$_2$ invariants of 1;000 and 1;001, respectively. For high-quality, large mixed crystals of Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$, we observed linear x-dependent magnetic properties, composition-independent pairwise exchange interactions along with an easy magnetization axis. The bulk band gap gradually decreases to zero for $x$ from 0 to 0.4, before reopening for $x>0.6$, evidencing topological phase transitions (TPTs) between topologically nontrivial phases and the semimetal state. The TPTs are driven purely by the variation of orbital contributions. By tracing the x-dependent $6p$ contribution to the states near the fundamental gap, the effective spin-orbit coupling variation is extracted. As $x$ varies, the maximum of this contribution switches from the valence to the conduction band, thereby driving two TPTs. The gapless state observed at $x=0.42$ closely resembles a Dirac semimetal above the Neel temperature and shows a magnetic gap below, which is clearly visible in raw photoemission data. The observed behavior of the Ge$_x$Mn$_{1-x}$Bi$_2$Te$_4$ system thereby demonstrates an ability to precisely control topological and magnetic properties of TIs.
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Submitted 22 June, 2023;
originally announced June 2023.
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Origin and Quantitative Description of the NESSIAS Effect at Si Nanostructures
Authors:
Dirk König,
Michael Frentzen,
Daniel Hiller,
Noël Wilck,
Giovanni Di Santo,
Luca Petaccia,
Igor Pìs,
Federica Bondino,
Elena Magnano,
Joachim Mayer,
Joachim Knoch,
Sean C. Smith
Abstract:
The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict…
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The electronic structure of low nanoscale (LNS) intrinsic silicon (i-Si) embedded in SiO2 vs. Si3N4 shifts away from vs. towards the vacuum level Evac, as described by the Nanoscale Electronic Structure Shift Induced by Anions at Surfaces (NESSIAS). Here, we fully explain the NESSIAS based on the quantum chemical properties of the elements involved. Deriving an analytic parameter Lambda to predict the highest occupied molecular orbital energy of Si nanocrystals (NCs), we use various hybrid-DFT methods and NC sizes to verify the accuracy of Lambda. We report on first experimental data of Si nanowells (NWells) embedded in SiO2 vs. Si3N4 by X-ray absorption spectroscopy in total fluorescence yield mode (XAS-TFY) which are complemented by ultraviolet photoelectron spectroscopy (UPS), characterizing their conduction band and valence band edge energies E_C and E_V, respectively. Scanning the valence band sub-structure by UPS over NWell thickness, we derive an accurate estimate of EV shifted purely by spatial confinement, and thus the actual E_V shift due to NESSIAS. For 1.9 nm thick NWells in SiO2 vs. Si3N4, we get offsets of Delta E_C = 0.56 eV and Delta E_V = 0.89 eV, demonstrating a type II homojunction in LNS i-Si. This p/n junction generated by the NESSIAS eliminates any deteriorating impact of impurity dopants, offering undoped ultrasmall Si electronic devices with much reduced physical gate lengths and CMOS-compatible materials.
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Submitted 23 August, 2022;
originally announced August 2022.
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Electronic band structure in pristine and Sulfur-doped Ta$_2$NiSe$_5$
Authors:
Tanusree Saha,
Luca Petaccia,
Barbara Ressel,
Primož Rebernik Ribič,
Giovanni Di Santo,
Wenjuan Zhao,
Giovanni De Ninno
Abstract:
We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta$_2$NiSe$_5$, as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25$\%$, such phase is heavily suppressed when there is a substantial amount, $\sim$ 50$\%$, of S-doping at liquid…
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We present an angle-resolved photoemission study of the electronic band structure of the excitonic insulator Ta$_2$NiSe$_5$, as well as its evolution upon Sulfur doping. Our experimental data show that while the excitonic insulating phase is still preserved at a Sulfur-doping level of 25$\%$, such phase is heavily suppressed when there is a substantial amount, $\sim$ 50$\%$, of S-doping at liquid nitrogen temperatures. Moreover, our photon energy-dependent measurements reveal a clear three dimensionality of the electronic structure, both in Ta$_2$NiSe$_5$ and Ta$_2$Ni(Se$_{1-x}$S$_x$)$_5$ ($x=0.25, 0.50$) compounds. This suggests a reduction of electrical and thermal conductivities, which might make these compounds less suitable for electronic transport applications.
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Submitted 31 May, 2022;
originally announced May 2022.
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Can the "shadow" of graphene band clarify its flatness?
Authors:
Matteo Jugovac,
Cesare Tresca,
Iulia Cojocariu,
Giovanni di Santo,
Wenjuan Zhao,
Luca Petaccia,
Paolo Moras,
Gianni Profeta,
Federico Bisti
Abstract:
Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron intera…
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Graphene band renormalization at the proximity of the van Hove singularity (VHS) has been investigated by angle-resolved photoemission spectroscopy (ARPES) on the Li-doped quasi-freestanding graphene on the cobalt (0001) surface. The absence of graphene band hybridization with the substrate, the doping contribution well represented by a rigid energy shift and the excellent electron-electron interaction screening ensured by the metallic substrate offer a privileged point of view for such investigation. A clear ARPES signal is detected along the M point of the graphene Brillouin zone, giving rise to an apparent flattened band. By simulating the graphene spectral function from the density functional theory calculated bands, we demonstrate that the photoemission signal along the M point originates from the "shadow" of the spectral function of the unoccupied band above the Fermi level. Such interpretation put forward the absence of any additional strong correlation effects at the VHS proximity, reconciling the mean field description of the graphene band structure even in the highly doped scenario.
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Submitted 8 March, 2022;
originally announced March 2022.
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Ubiquitous suppression of the nodal coherent spectral weight in Bi-based cuprates
Authors:
M. Zonno,
F. Boschini,
E. Razzoli,
M. Michiardi,
M. X. Na,
S. Dufresne,
T. M. Pedersen,
S. Gorovikov,
S. Gonzalez,
G. Di Santo,
L. Petaccia,
M. Schneider,
D. Wong,
P. Dosanjh,
Y. Yoshida,
H. Eisaki,
R. D. Zhong,
J. Schneeloch,
G. D. Gu,
A. K. Mills,
S. Zhdanovich,
G. Levy,
D. J. Jones,
A. Damascelli
Abstract:
High-temperature superconducting cuprates exhibit an intriguing phenomenology for the low-energy elementary excitations. In particular, an unconventional temperature dependence of the coherent spectral weight (CSW) has been observed in the superconducting phase by angle-resolved photoemission spectroscopy (ARPES), both at the antinode where the d-wave paring gap is maximum, as well as along the ga…
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High-temperature superconducting cuprates exhibit an intriguing phenomenology for the low-energy elementary excitations. In particular, an unconventional temperature dependence of the coherent spectral weight (CSW) has been observed in the superconducting phase by angle-resolved photoemission spectroscopy (ARPES), both at the antinode where the d-wave paring gap is maximum, as well as along the gapless nodal direction. Here, we combine equilibrium and time-resolved ARPES to track the temperature dependent meltdown of the nodal CSW in Bi-based cuprates with unprecedented sensitivity. We find the nodal suppression of CSW upon increasing temperature to be ubiquitous across single- and double-layer Bi cuprates, and uncorrelated to superconducting and pseudogap onset temperatures. We quantitatively model both the lineshape of the nodal spectral features and the anomalous suppression of CSW within the Fermi-Liquid framework, establishing the key role played by the normal state electrodynamics in the description of nodal quasiparticles in superconducting cuprates.
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Submitted 10 September, 2020;
originally announced September 2020.
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Structural and electronic properties of the pure and stable elemental 3D topological Dirac semimetal $α$-Sn
Authors:
Ivan Madarevic,
Umamahesh Thupakula,
Gertjan Lippertz,
Niels Claessens,
Pin-Cheng Lin,
Harsh Bana,
Giovanni Di Santo,
Sara Gonzalez,
Luca Petaccia,
Maya Narayanan Nair,
Lino M. C. Pereira,
Chris Van Haesendonck,
Margriet Van Bael
Abstract:
In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn film…
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In-plane compressively strained $α$-Sn films have been theoretically predicted and experimentally proven to possess non-trivial electronic states of a 3D topological Dirac semimetal. The robustness of these states typically strongly depends on purity, homogeneity and stability of the grown material itself. By developing a reliable fabrication process, we were able to grow pure strained $α$-Sn films on InSb(100), without heating of the substrate during growth, nor using any dopants. The $α$-Sn films were grown by molecular beam epitaxy, followed by experimental verification of the achieved chemical purity and structural properties of the film's surface. Local insight into the surface morphology was provided by scanning tunneling microscopy. We detected the existence of compressive strain using Mössbauer spectroscopy and we observed a remarkable robustness of the grown samples against ambient conditions. The topological character of the samples was confirmed by angle-resolved photoemission spectroscopy, revealing the Dirac cone of the topological surface state. Scanning tunneling spectroscopy, moreover, allowed obtaining an improved insight into the electronic structure of the 3D topological Dirac semimetal $α$-Sn above the Fermi level.
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Submitted 23 February, 2020; v1 submitted 3 December, 2019;
originally announced December 2019.
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Variety of magnetic topological phases in the (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ family
Authors:
I. I. Klimovskikh,
M. M. Otrokov,
D. Estyunin,
S. V. Eremeev,
S. O. Filnov,
A. Koroleva,
E. Shevchenko,
V. Voroshnin,
I. P. Rusinov,
M. Blanco-Rey,
M. Hoffmann,
Z. S. Aliev,
M. B. Babanly,
I. R. Amiraslanov,
N. A. Abdullayev,
V. N. Zverev,
A. Kimura,
O. E. Tereshchenko,
K. A. Kokh,
L. Petaccia,
G. Di Santo,
A. Ernst,
P. M. Echenique,
N. T. Mamedov,
A. M. Shikin
, et al. (1 additional authors not shown)
Abstract:
Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and ma…
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Quantum states of matter combining non-trivial topology and magnetism attract a lot of attention nowadays; the special focus is on magnetic topological insulators (MTIs) featuring quantum anomalous Hall and axion insulator phases. Feasibility of many novel phenomena that \emph{intrinsic} magnetic TIs may host depends crucially on our ability to engineer and efficiently tune their electronic and magnetic structures. Here, using angle- and spin-resolved photoemission spectroscopy along with \emph{ab initio} calculations we report on a large family of intrinsic magnetic TIs in the homologous series of the van der Waals compounds (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ with $m=0, ..., 6$. Magnetic, electronic and, consequently, topological properties of these materials depend strongly on the $m$ value and are thus highly tunable. The antiferromagnetic (AFM) coupling between the neighboring Mn layers strongly weakens on moving from MnBi2Te4 (m=0) to MnBi4Te7 (m=1), changes to ferromagnetic (FM) one in MnBi6Te10 (m=2) and disappears with further increase in m. In this way, the AFM and FM TI states are respectively realized in the $m=0,1$ and $m=2$ cases, while for $m \ge 3$ a novel and hitherto-unknown topologically-nontrivial phase arises, in which below the corresponding critical temperature the magnetizations of the non-interacting 2D ferromagnets, formed by the \MBT\, building blocks, are disordered along the third direction. The variety of intrinsic magnetic TI phases in (MnBi$_2$Te$_4$)(Bi$_2$Te$_3$)$_m$ allows efficient engineering of functional van der Waals heterostructures for topological quantum computation, as well as antiferromagnetic and 2D spintronics.
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Submitted 25 October, 2019;
originally announced October 2019.
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Electronic Structure Shift of Deep Nanoscale Silicon by SiO$_2$- vs. Si$_3$N$_4$-Embedding as Alternative to Impurity Doping
Authors:
Dirk König,
Noël Wilck,
Daniel Hiller,
Birger Berghoff,
Alexander Meledin,
Giovanni Di Santo,
Luca Petaccia,
Joachim Mayer,
Sean Smith,
Joachim Knoch
Abstract:
Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An int…
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Conventional impurity doping of deep nanoscale silicon (dns-Si) used in ultra large scale integration (ULSI) faces serious challenges below the 14 nm technology node. We report on a new fundamental effect in theory and experiment, namely the electronic structure of dns-Si experiencing energy offsets of ca. 1 eV as a function of SiO$_2$- vs. Si$_3$N$_4$-embedding with a few monolayers (MLs). An interface charge transfer (ICT) from dns-Si specific to the anion type of the dielectric is at the core of this effect and arguably nested in quantum-chemical properties of oxygen (O) and nitrogen (N) vs. Si. We investigate the size up to which this energy offset defines the electronic structure of dns-Si by density functional theory (DFT), considering interface orientation, embedding layer thickness, and approximants featuring two Si nanocrystals (NCs); one embedded in SiO$_2$ and the other in Si$_3$N$_4$. Working with synchrotron ultraviolet photoelectron spectroscopy (UPS), we use SiO$_2$- vs. Si$_3$N$_4$-embedded Si nanowells (NWells) to obtain their energy of the top valence band states. These results confirm our theoretical findings and gauge an analytic model for projecting maximum dns-Si sizes for NCs, nanowires (NWires) and NWells where the energy offset reaches full scale, yielding to a clear preference for electrons or holes as majority carriers in dns-Si. Our findings can replace impurity doping for n/p-type dns-Si as used in ultra-low power electronics and ULSI, eliminating dopant-related issues such as inelastic carrier scattering, thermal ionization, clustering, out-diffusion and defect generation. As far as majority carrier preference is concerned, the elimination of those issues effectively shifts the lower size limit of Si-based ULSI devices to the crystalization limit of Si of ca. 1.5 nm and enables them to work also under cryogenic conditions.
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Submitted 15 May, 2019;
originally announced May 2019.
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Origin of the flat band in heavily Cs doped graphene
Authors:
N. Ehlen,
M. Hell,
G. Marini,
E. H. Hasdeo,
R. Saito,
G. Di Santo,
L. Petaccia,
G. Profeta,
A. Grüneis
Abstract:
A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the…
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A flat energy dispersion of electrons at the Fermi level of a material leads to instabilities in the electronic system and can drive phase transitions. Here we introduce a method to induce a flat band in two-dimensional (2D) materials. We show that the flat band can be achieved by sandwiching the 2D material by two cesium (Cs) layers. We apply this method to monolayer graphene and investigate the flat band by a combination of angle-resolved photoemission spectroscopy experiment and the calculation. Our work highlights that charge transfer, zone folding of graphene bands and the covalent bonding between C and Cs atoms are at the origin of the flat energy band formation. The presented approach is an alternative route for obtaining flat band materials to twisting bilayer graphene which yields thermodynamically stable flat band materials in large areas.
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Submitted 30 May, 2019; v1 submitted 21 March, 2019;
originally announced March 2019.
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Prediction and observation of the first antiferromagnetic topological insulator
Authors:
Mikhail M. Otrokov,
Ilya I. Klimovskikh,
Hendrik Bentmann,
Dmitry Estyunin,
Alexander Zeugner,
Ziya S. Aliev,
Sebastian Gass,
Anja U. B. Wolter,
Alexandra V. Koroleva,
Alexander M. Shikin,
María Blanco-Rey,
Martin Hoffmann,
Igor P. Rusinov,
Alexandra Yu. Vyazovskaya,
Sergey V. Eremeev,
Yury M. Koroteev,
V. M. Kuznetsov,
F. Freyse,
J. Sánchez-Barriga,
Imamaddin R. Amiraslanov,
Mahammad B. Babanly,
Nazim T. Mamedov,
Nadir A. Abdullayev,
Vladimir N. Zverev,
Alexey Alfonsov
, et al. (19 additional authors not shown)
Abstract:
Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of d…
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Magnetic topological insulators (MTIs) are narrow gap semiconductor materials that combine non-trivial band topology and magnetic order. Unlike their nonmagnetic counterparts, MTIs may have some of the surfaces gapped due to breaking the time-reversal symmetry, which enables a number of exotic phenomena having potential applications in spintronics. So far, MTIs have only been created by means of doping nonmagnetic TIs with 3d transition metal elements, however, such an approach leads to strongly inhomogeneous magnetic and electronic properties of these materials, restricting the observation of important effects to very low temperatures. Finding intrinsic MTI, i.e. a stoichiometric well-ordered magnetic compound, could be an ideal solution to these problems, but no such material was observed to date. Here, using density functional theory we predict and further confirm by means of structural, transport, magnetic, angle- and spin-resolved photoemission spectroscopy measurements the realization of the antiferromagnetic (AFM) TI phase, that is hosted by the van der Waals layered compound MnBi$_2$Te$_4$. An interlayer AFM ordering makes MnBi$_2$Te$_4$ invariant with respect to the combination of the time-reversal ($Θ$) and primitive-lattice translation ($T_{1/2}$) symmetries, $S = ΘT_{1/2}$, giving rise to the $Z_2$ topological classification of AFM insulators. We find $Z_2 = 1$ for MnBi$_2$Te$_4$, which confirms its topologically nontrivial nature. The $S$-breaking (0001) surface of MnBi$_2$Te$_4$ exhibits a giant bandgap in the topological surface state as evidenced by ab initio calculations and photoemission measurements. These results culminate almost a decade-long search of an AFMTI, predicted in 2010. Furthermore, MnBi$_2$Te$_4$ is the first intrinsic magnetic TI realized experimentally.
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Submitted 21 January, 2025; v1 submitted 19 September, 2018;
originally announced September 2018.
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Narrow photoluminescence peak of epitaxial MoS$_2$ on graphene/Ir(111)
Authors:
Niels Ehlen,
Joshua Hall,
Boris V. Senkovskiy,
Martin Hell,
Jun Li,
d Alexander Herman,
Dmitry Smirnov,
Alexander Fedorov,
Vladimir Yu. Voroshnin,
Giovanni di Santo,
Luca Petaccia,
Thomas Michely,
Alexander Grüneis
Abstract:
We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy…
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We report on the observation of photoluminescence (PL) with a narrow 18 meV peak width from molecular beam epitaxy grown MoS$_2$ on graphene/Ir(111). This observation is explained in terms of a weak graphene-MoS$_2$ interaction that prevents PL quenching expected for a metallic substrate. The weak interaction of MoS$_2$ with the graphene is highlighted by angle-resolved photoemission spectroscopy and temperature dependent Raman spectroscopy. These methods reveal that there is no hybridization between electronic states of graphene and MoS$_2$ and a different thermal expansion of graphene and MoS$_2$. Molecular beam epitaxy grown MoS2 on graphene is therefore an important platform for optoelectronics which allows for large area growth with controlled properties.
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Submitted 6 September, 2018;
originally announced September 2018.
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Synchrotron radiation induced magnetization in magnetically-doped and pristine topological insulators
Authors:
A. M. Shikin,
D. M. Sostina,
A. A. Rybkina,
V. Yu. Voroshnin,
I. I. Klimovskikh,
A. G. Rybkin,
D. A. Estyunin,
K. A. Kokh,
O. E. Tereshchenko,
L. Petaccia,
G. Di Santo,
P. N. Skirdkov,
K. A. Zvezdin,
A. K. Zvezdin,
A. Kimura,
E. V. Chulkov,
E. E. Krasovskii
Abstract:
Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized…
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Quantum mechanics postulates that any measurement influences the state of the investigated system. Here, by means of angle-, spin-, and time-resolved photoemission experiments and ab initio calculations we demonstrate how non-equal depopulation of the Dirac cone (DC) states with opposite momenta in V-doped and pristine topological insulators (TIs) created by a photoexcitation by linearly polarized synchrotron radiation (SR) is followed by the hole-generated uncompensated spin accumulation and the SR-induced magnetization via the spin-torque effect. We show that the photoexcitation of the DC is asymmetric, that it varies with the photon energy, and that it practically does not change during the relaxation. We find a relation between the photoexcitation asymmetry, the generated spin accumulation and the induced spin polarization of the DC and V 3d states. Experimentally the SR-generated in-plane and out-of-plane magnetization is confirmed by the $k_{\parallel}$-shift of the DC position and by the splitting of the states at the Dirac point even above the Curie temperature. Theoretical predictions and estimations of the measurable physical quantities substantiate the experimental results.
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Submitted 27 July, 2017;
originally announced July 2017.
