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Inferring activity from the flow field around active colloidal particles using deep learning
Authors:
Aditya Mohapatra,
Aditya Kumar,
Mayurakshi Deb,
Siddharth Dhomkar,
Rajesh Singh
Abstract:
Active colloidal particles create flow around them due to non-equilibrium process on their surfaces. In this paper, we infer the activity of such colloidal particles from the flow field created by them via deep learning. We first explain our method for one active particle, inferring the $2s$ mode (or the stresslet) and the $3t$ mode (or the source dipole) from the flow field data, along with the p…
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Active colloidal particles create flow around them due to non-equilibrium process on their surfaces. In this paper, we infer the activity of such colloidal particles from the flow field created by them via deep learning. We first explain our method for one active particle, inferring the $2s$ mode (or the stresslet) and the $3t$ mode (or the source dipole) from the flow field data, along with the position and orientation of the particle. We then apply the method to a system of many active particles. We find excellent agreements between the predictions and the true values of activity. Our method presents a principled way to predict arbitrary activity from the flow field created by active particles.
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Submitted 15 May, 2025;
originally announced May 2025.
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Identifying optimal magnetic field configurations for decoherence mitigation of boron vacancies in hexagonal boron nitride
Authors:
Basanta Mistri,
Saksham Mahajan,
Felix Donaldson,
Rama K. Kamineni,
Siddharth Dhomkar
Abstract:
The negatively charged boron vacancy center in 2D hexagonal boron nitride has emerged as a promising quantum sensor. However, its sensitivity is constrained due to ubiquitous nuclear spins in the environment. The nuclear spins, hyperfine coupled with the central electron spin, effectively behave as magnetic field fluctuators, leading to rapid decoherence. Here, we explore the effectiveness of stat…
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The negatively charged boron vacancy center in 2D hexagonal boron nitride has emerged as a promising quantum sensor. However, its sensitivity is constrained due to ubiquitous nuclear spins in the environment. The nuclear spins, hyperfine coupled with the central electron spin, effectively behave as magnetic field fluctuators, leading to rapid decoherence. Here, we explore the effectiveness of static magnetic field strength and orientation in realizing peculiar subspaces that can lead to enhanced spin coherence. Specifically, using detailed numerical simulations of the spin Hamiltonian, we identify specific field configurations that minimize energy gradients and, consequently, are expected to facilitate decoherence suppression. We also develop an approximate analytical model based on the perturbation theory that accurately predicts these low-gradient subspaces for magnetic fields aligned with the electron spin quantization axis, applicable not only to boron vacancies but to any spin-1 electronic system coupled to nearby nuclear spins. Furthermore, to stimulate experimental validation, we estimate coherence lifetimes as a function of various bias field configurations and demonstrate that significant decoherence suppression can indeed be achieved in certain regions. These findings and the developed methodology offer valuable insights for mitigating decoherence in a low-field regime.
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Submitted 13 May, 2025; v1 submitted 10 May, 2025;
originally announced May 2025.
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Donor-bound-exciton strain microscopy in silicon devices
Authors:
Pierandrea Conti,
Siddharth Dhomkar,
Philipp Ross,
John Mansir,
John J. L. Morton
Abstract:
We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk doped sample under controlled uniaxial stress, confirming the validity of existing models in the low strain ($\lesssim 10^{-5}$) regime. We then demonstrate the lo…
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We explore the effects of stress on silicon donor bound exciton ($\mathrm{D^0X}$) transitions in bulk silicon and in microfabricated silicon devices. We first study $\mathrm{D^0X}$ transitions in an isotopically purified silicon-28 bulk doped sample under controlled uniaxial stress, confirming the validity of existing models in the low strain ($\lesssim 10^{-5}$) regime. We then demonstrate the localised photoconductive detection of a few thousand donors illuminated by a 1078 nm resonant laser with $4~\mathrm{μm}$ spot focused on a microfabricated device consisting of an implanted phosphorus layer between a pair of metallic contacts. We observe local variations in the strained exciton peak splitting from $10~\mathrm{μeV}$ to $200~\mathrm{μeV}$, and obtain scanning microscopy stress maps in good agreement with finite-element-model thermal stress simulations. Our results suggest a potential use of donor bound excitons for in-situ stress sensing, and demonstrate pathways for the miniaturisation of $\mathrm{D^0X}$ photoconductive detection.
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Submitted 30 August, 2024;
originally announced August 2024.
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Stability of near surface nitrogen vacancy centers using dielectric surface passivation
Authors:
Ravi Kumar,
Saksham Mahajan,
Felix Donaldson,
Siddharth Dhomkar,
Hector J. Lancaster,
Curran Kalha,
Aysha A. Riaz,
Yujiang Zhu,
Christopher A. Howard,
Anna Regoutz,
John J. L. Morton
Abstract:
We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using Raman and X…
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We study the photo-physical stability of ensemble near-surface nitrogen vacancy (NV) centers in diamond under vacuum and air. The optically detected magnetic resonance contrast of the NV centers was measured following exposure to laser illumination, showing opposing trends in air compared to vacuum (increasing by up to 9% and dropping by up to 25%, respectively). Characterization using Raman and X-ray photoelectron spectroscopies suggests a surface reconstruction: In air, atmospheric oxygen adsorption on surface leads to an increase in NV- fraction, whereas in vacuum, net oxygen desorption increases the NV0 fraction. NV charge state switching is confirmed by photoluminescence spectroscopy. Deposition of ~ 2 nm alumina (Al2O3) over the diamond surface was shown to stabilize the NV charge state under illumination in either environment, attributed to a more stable surface electronegativity. The use of alumina coating on diamond is therefore a promising approach to improve the resilience of NV sensors.
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Submitted 23 November, 2023;
originally announced November 2023.
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Vector detection of AC magnetic fields by Nitrogen-Vacancy centers of single orientation in diamond
Authors:
Pooja Lamba,
Akshat Rana,
Sougata Halder,
Siddharth Dhomkar,
Dieter Suter,
Rama K. Kamineni
Abstract:
Nitrogen-Vacancy (NV) centers in diamond have useful properties for detecting both AC and DC magnetic fields with high sensitivity at nano-scale resolution. Vector detection of AC magnetic fields can be achieved by using NV centers having three different orientations. Here, we propose a method to achieve this by using NV centers of single orientation. In this method, a static magnetic field is app…
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Nitrogen-Vacancy (NV) centers in diamond have useful properties for detecting both AC and DC magnetic fields with high sensitivity at nano-scale resolution. Vector detection of AC magnetic fields can be achieved by using NV centers having three different orientations. Here, we propose a method to achieve this by using NV centers of single orientation. In this method, a static magnetic field is applied perpendicular to the NV axis, leading to strong mixing of the $m_{s}=-1$ and $1$ electron spin states. As a result, all three electron spin transitions of the triplet ground state have non-zero dipole moments, with each transition coupling to a single component of the magnetic field. This can be used to measure both strength and orientation of the applied AC field. To validate the technique, we perform a proof of principle experiment using a subset of ensemble NV centers in diamond, all having the same orientation.
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Submitted 18 August, 2023;
originally announced August 2023.
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Plasmonics enabled atomically thin linearly polarized emitter at room temperature
Authors:
Bidisha Roy,
Maex Blauth,
Siddharth Dhomkar,
Michael Kaniber,
Vinod M. Menon,
Jonathan. J. Finley
Abstract:
Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable to such materials constitutes a hybrid system that can be of interest to enable manipulation of their cumulative optical properties. Here we report tuning of excitonic emission from monolayer WSe2, mechanically exfoliate…
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Two-dimensional transition metal di-chalcogenide semiconductors provide unique possibilities to investigate strongly confined excitonic physics and a plasmonic platform integrable to such materials constitutes a hybrid system that can be of interest to enable manipulation of their cumulative optical properties. Here we report tuning of excitonic emission from monolayer WSe2, mechanically exfoliated on top of a periodic two dimensional plasmonic array of elliptical gold (Au) nanodiscs. By exploiting the polarization-dependent nature of plasmonic resonance of the nano plasmonic array (NPA), the photoluminescence (PL) emission from the overlaid monolayer WSe2 could be significantly manipulated. PL is preferentially enhanced at the NPA covered regions of the ake when excited closer to the plasmonic resonant frequencies and previously unpolarized WSe2 PL emission gained ~ 20 up to 40 % degree of linear polarization at room temperature. Obtaining significant spectral overlap between the PL spectrum of WSe2 and the polarization tunable plasmonic resonance of the NPA plays a crucial role in this observation. The results demonstrate active tunability of optical emission from WSe2 by using an otherwise passive plasmonic environment and open the possibility of achieving atomically thin linearly polarized emitters at room temperature. In addition to fundamentally interesting physics of such interactions this can be highly desirable for ultrathin orientation sensitive opto-electronic device related applications.
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Submitted 25 May, 2022;
originally announced May 2022.
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Using deep learning to understand and mitigate the qubit noise environment
Authors:
David F. Wise,
John J. L. Morton,
Siddharth Dhomkar
Abstract:
Understanding the spectrum of noise acting on a qubit can yield valuable information about its environment, and crucially underpins the optimization of dynamical decoupling protocols that can mitigate such noise. However, extracting accurate noise spectra from typical time-dynamics measurements on qubits is intractable using standard methods. Here, we propose to address this challenge using deep l…
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Understanding the spectrum of noise acting on a qubit can yield valuable information about its environment, and crucially underpins the optimization of dynamical decoupling protocols that can mitigate such noise. However, extracting accurate noise spectra from typical time-dynamics measurements on qubits is intractable using standard methods. Here, we propose to address this challenge using deep learning algorithms, leveraging the remarkable progress made in the field of image recognition, natural language processing, and more recently, structured data. We demonstrate a neural network based methodology that allows for extraction of the noise spectrum associated with any qubit surrounded by an arbitrary bath, with significantly greater accuracy than the current methods of choice. The technique requires only a two-pulse echo decay curve as input data and can further be extended either for constructing customized optimal dynamical decoupling protocols or for obtaining critical qubit attributes such as its proximity to the sample surface. Our results can be applied to a wide range of qubit platforms, and provide a framework for improving qubit performance with applications not only in quantum computing and nanoscale sensing but also in material characterization techniques such as magnetic resonance.
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Submitted 11 January, 2021; v1 submitted 3 May, 2020;
originally announced May 2020.
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Dynamics of frequency-swept nuclear spin optical pumping in powdered diamond at low magnetic fields
Authors:
Pablo R. Zangara,
Siddharth Dhomkar,
Ashok Ajoy,
Kristina Liu,
Raffi Nazaryan,
Daniela Pagliero,
Dieter Suter,
Jeffrey A. Reimer,
Alexander Pines,
Carlos A. Meriles
Abstract:
A broad effort is underway to improve the sensitivity of nuclear magnetic resonance through the use of dynamic nuclear polarization. Nitrogen-vacancy (NV) centers in diamond offer an appealing platform because these paramagnetic defects can be optically polarized efficiently at room temperature. However, work thus far has been mainly limited to single crystals because most polarization transfer pr…
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A broad effort is underway to improve the sensitivity of nuclear magnetic resonance through the use of dynamic nuclear polarization. Nitrogen-vacancy (NV) centers in diamond offer an appealing platform because these paramagnetic defects can be optically polarized efficiently at room temperature. However, work thus far has been mainly limited to single crystals because most polarization transfer protocols are sensitive to misalignment between the NV and magnetic field axes. Here we study the spin dynamics of NV-13C pairs in the simultaneous presence of optical excitation and microwave frequency sweeps at low magnetic fields. We show that a subtle interplay between illumination intensity, frequency sweep rate, and hyperfine coupling strength leads to efficient, sweep-direction-dependent 13C spin polarization over a broad range of orientations of the magnetic field. In particular, our results strongly suggest that finely-tuned, moderately coupled nuclear spins are key to the hyperpolarization process, which makes this mechanism distinct from other known dynamic polarization channels. These findings pave the route to applications where powders are intrinsically advantageous, including the hyper-polarization of target fluids in contact with the diamond surface or the use of hyperpolarized particles as contrast agents for in-vivo imaging.
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Submitted 18 February, 2019;
originally announced February 2019.
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Spin readout via spin-to-charge conversion in bulk diamond nitrogen-vacancy ensembles
Authors:
Harishankar Jayakumar,
Siddharth Dhomkar,
Jacob Henshaw,
Carlos A. Meriles
Abstract:
We demonstrate optical readout of ensembles of nitrogen-vacancy(NV) center spins in a bulk diamond sample via spin-to-charge conversion. A high power 594 nm laser is utilized to selectively ionize these paramagnetic defects in the spin state with a contrast of up to 12%. In comparison with the conventional 520 nm spin readout, spin-to-charge-conversion-based readout provides higher signal-to-noise…
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We demonstrate optical readout of ensembles of nitrogen-vacancy(NV) center spins in a bulk diamond sample via spin-to-charge conversion. A high power 594 nm laser is utilized to selectively ionize these paramagnetic defects in the spin state with a contrast of up to 12%. In comparison with the conventional 520 nm spin readout, spin-to-charge-conversion-based readout provides higher signal-to-noise ratio, with tenfold sensing measurement speedup for millisecond long pulse sequences. This level of performance was achieved for an NV- ionization of only 25%, limited by the ionization and readout laser powers. These observations pave the way to a range of high-sensitivity metrology applications where the use of NV- ensembles in bulk diamond has proven useful, including sensing and imaging of target materials overlaid on the diamond surface.
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Submitted 19 September, 2018;
originally announced September 2018.
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Charge dynamics in near-surface, variable-density ensembles of nitrogen-vacancy centers in diamond
Authors:
Siddharth Dhomkar,
Harishankar Jayakumar,
Pablo R. Zangara,
Carlos A. Meriles
Abstract:
Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond surface. Using multi-color confocal microscopy, here we show that near-surface point defects arising from high-density ion implantation dramatically increase the…
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Although the spin properties of superficial shallow nitrogen-vacancy (NV) centers have been the subject of extensive scrutiny, considerably less attention has been devoted to studying the dynamics of NV charge conversion near the diamond surface. Using multi-color confocal microscopy, here we show that near-surface point defects arising from high-density ion implantation dramatically increase the ionization and recombination rates of shallow NVs compared to those in bulk diamond. Further, we find that these rates grow linearly not quadratically with laser intensity, indicative of single-photon processes enabled by NV state mixing with other defect states. Accompanying these findings we observe NV ionization and recombination in the dark, likely the result of charge transfer to neighboring traps. In spite of the altered charge dynamics, we show one can imprint rewritable, long-lasting patterns of charged-initialized, near-surface NVs over large areas, an ability that could be exploited for electrochemical biosensing or to optically store digital data sets with sub-diffraction resolution.
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Submitted 30 June, 2018;
originally announced July 2018.
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On-Demand Generation of Neutral and Negatively-Charged Silicon-Vacancy Centers in Diamond
Authors:
Siddharth Dhomkar,
Pablo R. Zangara,
Jacob Henshaw,
Carlos A. Meriles
Abstract:
Point defects in wide-bandgap semiconductors are emerging as versatile resources for nanoscale sensing and quantum information science but our understanding of the photo-ionization dynamics is presently incomplete. Here we use two-color confocal microscopy to investigate the dynamics of charge in Type 1b diamond hosting nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers. By examining the non-…
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Point defects in wide-bandgap semiconductors are emerging as versatile resources for nanoscale sensing and quantum information science but our understanding of the photo-ionization dynamics is presently incomplete. Here we use two-color confocal microscopy to investigate the dynamics of charge in Type 1b diamond hosting nitrogen-vacancy (NV) and silicon-vacancy (SiV) centers. By examining the non-local fluorescence patterns emerging from local laser excitation, we show that in the simultaneous presence of photo-generated electrons and holes, SiV (NV) centers selectively transform into the negative (neutral) charge state. Unlike NVs, 532 nm illumination ionizes SiV- via a single photon process thus hinting at a comparatively shallower ground state. In particular, slower ionization rates at longer wavelengths suggest the latter lies approximately ~1.9 eV below the conduction band minimum. Building on the above observations we demonstrate on-demand SiV and NV charge initialization over large areas via green laser illumination of variable intensity.
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Submitted 17 March, 2018;
originally announced March 2018.
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Long-term data storage in diamond
Authors:
Siddharth Dhomkar,
Jacob Henshaw,
Harishankar Jayakumar,
Carlos A. Meriles
Abstract:
The negatively-charged nitrogen-vacancy (NV-) center in diamond is the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Although most work so far has focused on the NV- optical and spin properties, control of the charge state promises complementary opportunities. One intriguing possibility is the long-term storage of information, a…
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The negatively-charged nitrogen-vacancy (NV-) center in diamond is the focus of widespread attention for applications ranging from quantum information processing to nanoscale metrology. Although most work so far has focused on the NV- optical and spin properties, control of the charge state promises complementary opportunities. One intriguing possibility is the long-term storage of information, a notion we hereby introduce using NV rich, type-1b diamond. As a proof of principle, we use multi-color optical microscopy to read, write, and reset arbitrary data sets with 2-D binary bit density comparable to present digital-video-disk (DVD) technology. Leveraging on the singular dynamics of NV- ionization, we encode information on different planes of the diamond crystal with no cross talk, hence extending the storage capacity to three dimensions. Further, we correlate the center's charge state and nuclear spin polarization of the nitrogen host, and show that the latter is robust to a cycle of NV- ionization and recharge. In combination with super-resolution microscopy techniques, these observations provide a route towards sub-diffraction NV charge control, a regime where the storage capacity could exceed present technologies.
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Submitted 27 October, 2016;
originally announced October 2016.
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Optical patterning of trapped charge in nitrogen-doped diamond
Authors:
Harishankar Jayakumar,
Jacob Henshaw,
Siddharth Dhomkar,
Daniela Pagliero,
Abdelghani Laraoui,
Neil B. Manson,
Remus Albu,
Marcus W. Doherty,
Carlos A. Meriles
Abstract:
The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here we use two-color optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion, and trapping in type…
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The nitrogen-vacancy (NV) centre in diamond is emerging as a promising platform for solid-state quantum information processing and nanoscale metrology. Of interest in these applications is the manipulation of the NV charge, which can be attained by optical excitation. Here we use two-color optical microscopy to investigate the dynamics of NV photo-ionization, charge diffusion, and trapping in type-1b diamond. We combine fixed-point laser excitation and scanning fluorescence imaging to locally alter the concentration of negatively charged NVs, and to subsequently probe the corresponding redistribution of charge. We uncover the formation of spatial patterns of trapped charge, which we qualitatively reproduce via a model of the interplay between photo-excited carriers and atomic defects. Further, by using the NV as a probe, we map the relative fraction of positively charged nitrogen upon localized optical excitation. These observations may prove important to transporting quantum information between NVs or to developing three-dimensional, charge-based memories.
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Submitted 10 September, 2016;
originally announced September 2016.
