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Observing Bethe strings in an attractive Bose gas far from equilibrium
Authors:
Milena Horvath,
Alvise Bastianello,
Sudipta Dhar,
Rebekka Koch,
Yanliang Guo,
Jean-Sébastien Caux,
Manuele Landini,
Hanns-Christoph Nägerl
Abstract:
Bethe strings are bound states of constituent particles in a variety of interacting many-body one-dimensional (1D) integrable quantum models relevant to magnetism, nanophysics, cold atoms and beyond. As emergent fundamental excitations, they are predicted to collectively reshape observable equilibrium and dynamical properties. Small individual Bethe strings have recently been observed in quantum m…
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Bethe strings are bound states of constituent particles in a variety of interacting many-body one-dimensional (1D) integrable quantum models relevant to magnetism, nanophysics, cold atoms and beyond. As emergent fundamental excitations, they are predicted to collectively reshape observable equilibrium and dynamical properties. Small individual Bethe strings have recently been observed in quantum magnets and superconducting qubits. However, creating states featuring intermixtures of many, including large, strings remains an outstanding experimental challenge. Here, using nearly integrable ultracold Bose gases, we realize such intermixtures of Bethe strings out of equilibrium, by dynamically tuning interactions from repulsive to attractive. We measure the average binding energy of the strings, revealing the presence of bound states of more than six particles. We find further evidence for them in the momentum distribution and in Tan's contact, connected to the correlated density. Our data quantitatively agree with predictions from generalized hydrodynamics (GHD). Manipulating intermixtures of Bethe strings opens new avenues for understanding quantum coherence, nonlinear dynamics and thermalization in strongly-interacting 1D systems.
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Submitted 15 May, 2025;
originally announced May 2025.
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Anyonization of bosons in one dimension: an effective swap model
Authors:
Botao Wang,
Amit Vashisht,
Yanliang Guo,
Sudipta Dhar,
Manuele Landini,
Hanns-Christoph Nägerl,
Nathan Goldman
Abstract:
Anyons emerge as elementary excitations in low-dimensional quantum systems and exhibit behavior distinct from bosons or fermions. Previous models of anyons in one dimension (1D) are mainly categorized into two types: those that rely on nontrivial scattering behavior, and those based on density-dependent hopping processes in discrete lattices. Here, we introduce a novel framework for realizing anyo…
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Anyons emerge as elementary excitations in low-dimensional quantum systems and exhibit behavior distinct from bosons or fermions. Previous models of anyons in one dimension (1D) are mainly categorized into two types: those that rely on nontrivial scattering behavior, and those based on density-dependent hopping processes in discrete lattices. Here, we introduce a novel framework for realizing anyonic correlations using the internal degrees of freedom of a spinor quantum gas. We propose a "swap" model, which assigns a complex phase factor to the swapping processes between two different species, referred to as "host particles" and "impurities". The anyonic characteristics are demonstrated through the one-body correlator of the impurity, using a spin-charge separation analysis. For a single impurity, our swap model can be effectively implemented by applying tilt potentials in a strongly interacting quantum gas [Dhar et al., arXiv:2412.21131]. We further explore the dynamical properties of anyonic correlations and extend our analysis to the case of multiple impurities. Our work provides new avenues for engineering many-body anyonic behavior in quantum simulation platforms.
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Submitted 29 April, 2025;
originally announced April 2025.
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Anyonization of bosons
Authors:
Sudipta Dhar,
Botao Wang,
Milena Horvath,
Amit Vashisht,
Yi Zeng,
Mikhail B. Zvonarev,
Nathan Goldman,
Yanliang Guo,
Manuele Landini,
Hanns-Christoph Nägerl
Abstract:
Anyons are low-dimensional quasiparticles that obey fractional statistics, hence interpolating between bosons and fermions. In two dimensions, they exist as elementary excitations of fractional quantum Hall states and they are believed to enable topological quantum computing. One-dimensional (1D) anyons have been theoretically proposed, but their experimental realization has proven to be difficult…
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Anyons are low-dimensional quasiparticles that obey fractional statistics, hence interpolating between bosons and fermions. In two dimensions, they exist as elementary excitations of fractional quantum Hall states and they are believed to enable topological quantum computing. One-dimensional (1D) anyons have been theoretically proposed, but their experimental realization has proven to be difficult. Here, we observe anyonic correlations, which emerge through the phenomenon of spin-charge separation, in a 1D strongly-interacting quantum gas. The required spin degree of freedom is provided by a mobile impurity, whose effective anyonic correlations are associated with an experimentally tunable statistical angle. These anyonic correlations are measured by monitoring the impurity momentum distribution, whose asymmetric feature demonstrates the transmutation of bosons via anyons to fermions. Going beyond equilibrium conditions, we study the dynamical properties of the anyonic correlations via dynamical fermionization of the anyons. Our work opens up the door to the exploration of non-equilibrium anyonic phenomena in a highly controllable setting.
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Submitted 30 December, 2024;
originally announced December 2024.
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Unveiling the structural, chemical state, and optical band-gap evolution of Ta-doped epitaxial SrTiO3 thin films using first-principles calculations and spectroscopic ellipsometry
Authors:
Shammi Kumar,
Raja Sen,
Mamta Arya,
Sankar Dhar,
Priya Johari
Abstract:
In this report, the optical properties of Ta doped SrTiO3 (STO) due to its potential in transparent conducting oxides (TCOs) is explored by a combination of theoretical studies based on density functional theory and spectroscopic ellipsometry. To achieve this theoretically, we vary the concentration of Ta from 0 - 12.5% in SrTi1-xTaxO3 system by substitutional doping and report its effect on the r…
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In this report, the optical properties of Ta doped SrTiO3 (STO) due to its potential in transparent conducting oxides (TCOs) is explored by a combination of theoretical studies based on density functional theory and spectroscopic ellipsometry. To achieve this theoretically, we vary the concentration of Ta from 0 - 12.5% in SrTi1-xTaxO3 system by substitutional doping and report its effect on the resulting structural, chemical, electronic, chemical, and optical properties. Additionally, we perform band unfolding to shed light on the true nature of optical transitions due to Ta doping. We verify these results experimentally by fabricating epitaxial SrTi1-xTaxO3 thin films ( x = 0 - 5%) by pulsed laser deposition and obtain the optical dielectric properties of the system with the help of spectroscopic ellipsometry. By combining theoretical and experimental studies, we provide evidence that the band gap of STO increases due to Ta doping while also enhancing its electronic properties. The findings of our study offer an extensive understanding of the intricacies associated with elemental doping in perovskite oxides and propose strategies for addressing obstacles associated with TCOs.
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Submitted 22 November, 2024;
originally announced November 2024.
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Boosting the transparency of metallic SrNbO3 through Ti doping
Authors:
Shammi Kumar,
Liang Si,
Karsten Held,
Sankar Dhar,
Rakesh Kumar,
Priya Johari
Abstract:
In recent years, various materials have been developed to reduce the reliance of industries on Indium, a primary component of transparent conducting oxides (TCOs) used in the current generation of devices. The leading candidates for indium free TCOs are strontium vanadates, niobates and molybdates -- strongly correlated perovskite systems that exhibit high intrinsic electrical conductivity and opt…
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In recent years, various materials have been developed to reduce the reliance of industries on Indium, a primary component of transparent conducting oxides (TCOs) used in the current generation of devices. The leading candidates for indium free TCOs are strontium vanadates, niobates and molybdates -- strongly correlated perovskite systems that exhibit high intrinsic electrical conductivity and optimal transparency. In this work, we focus on the strontium niobate thin films and manipulate its optical conductivity by Ti doping, which shifts the plasma frequency and reduces electronic correlations. This allows us to achieve a low resistance for Ti doped SNO thin films, while maintaining a high transparency in the visible spectrum. We obtain the optimal figure-of-merit (FOM) of 10.3 ($10^{-3}Ω^{-1}$) for $x = 0.3$. This FOM significantly outperforms the optoelectronic capabilities of Tin-doped Indium oxide (ITO) and several other proposed transparent conductor materials. Our research paves the way for designing the next generation of transparent conductors, guided by insights from density-functional theory (DFT) and dynamical mean-field theory (DMFT).
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Submitted 4 October, 2024;
originally announced October 2024.
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Controlled Growth of large area bilayer MoS$_2$ films on SiO$_2$ substrates by chemical vapour deposition technique
Authors:
Umakanta Patra,
Faiha Mujeeb,
Abhiram K,
Jai Israni,
Subhabrata Dhar
Abstract:
Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer lifetime as compared to direct excitons. This property can be utilized for the development of exciton-based logic devices, which are supposed to be superior in terms of energy efficiency and optical communication compatibi…
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Bilayer (2L) transition metal dichalcogenides (TMD) have the ability to host interlayer excitons, where electron and hole parts are spatially separated that leads to much longer lifetime as compared to direct excitons. This property can be utilized for the development of exciton-based logic devices, which are supposed to be superior in terms of energy efficiency and optical communication compatibility as compared to their electronic counterparts. However, obtaining uniformly thick bilayer epitaxial films with large area coverage is challenging. Here, we have engineered the flow pattern of the precursors over the substrate surface to obtain large area (mm2) covered strictly bilayer MoS$_2$ films on SiO$_2$ by chemical vapour deposition (CVD) technique without any plasma treatment of the substrate prior to the growth. Bilayer nature of these films is confirmed by Raman, low-frequency Raman, atomic force microscopy (AFM) and photoluminescence (PL) studies. The uniformity of the film has been checked by Raman peak separation and PL intensity map. High resolution transmission electron microscopy (HRTEM) reveals that crystalline and twisted bilayer islands coexist within the layer. Back gated field-effect transistor (FET) structures fabricated on the bilayers show on/off ratio of 10^6 and subthreshold swings (SS) of 2.5 V/Decade.
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Submitted 12 September, 2024;
originally announced September 2024.
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p-(001)NiO/n-(0001)ZnO heterostructures grown by pulsed laser deposition technique
Authors:
Bhabani Prasad Sahu,
Amandeep Kaur,
Simran Arora,
Subhabrata Dhar
Abstract:
NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along [0001]-direction on (0001)sapphire surface as expected. While, the epitaxial NiO film is found to be deposited along [001]-direction on the (0001)ZnO surface. Moreover, the presence of three (001)NiO domains laterally ro…
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NiO/ZnO heterostructures are grown on c-sapphire substrates using pulsed laser deposition (PLD) technique. X-ray diffraction study shows that the ZnO layer epitaxially grows along [0001]-direction on (0001)sapphire surface as expected. While, the epitaxial NiO film is found to be deposited along [001]-direction on the (0001)ZnO surface. Moreover, the presence of three (001)NiO domains laterally rotated by 30° with respect to each other, has also been observed in our NiO films. The study reveals the continuous nature of the NiO film, which also possesses a very smooth surface morphology. In a sharp contrast, ZnO films are found to grow along [0001]-direction when deposited on (111)NiO layers. These films also show columnar morphology. (001)NiO/(0001)ZnO layers exhibit the rectifying current-voltage characteristics that suggests the existence of p-n junction in these devices. However, the behavior could not be observed in (0001)ZnO/(111)NiO heterojunctions. The reason could be the columnar morphology of the ZnO layer. Such a morphology can facilitate the propagation of the metal ions from the contact pads to the underlying NiO layer and suppress the p-n junction effect.
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Submitted 8 September, 2024;
originally announced September 2024.
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Anomalous resistivity upturn in Co intercalated TaS$_2$
Authors:
Moumita Nandi,
Surajit Dutta,
A. Thamizhavel,
S. K. Dhar
Abstract:
Intercalation of magnetic atoms into the van der Waals gaps of layered transition metal dichalcogenides offers an excellent platform to produce exotic physical properties. Here, we report a detailed study of magnetic and electrical transport properties of Co$_{0.28}$TaS$_2$. The temperature dependent resistivity measurements display anomalous upturn below 11 K, which persists in presence of magnet…
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Intercalation of magnetic atoms into the van der Waals gaps of layered transition metal dichalcogenides offers an excellent platform to produce exotic physical properties. Here, we report a detailed study of magnetic and electrical transport properties of Co$_{0.28}$TaS$_2$. The temperature dependent resistivity measurements display anomalous upturn below 11 K, which persists in presence of magnetic field even up to 14 T. In the low temperature region, the resistivity upturn exhibits a unique $T^{1/2}$ scaling behavior, which remains unchanged when an external magnetic field is applied. The $T^{1/2}$ dependence of resistivity upturn is the hallmark of non-Fermi liquid state in orbital two-channel Kondo effect(2CK). This anomalous resistivity upturn in Co$_{0.28}$TaS$_2$ can be attributed to the orbital two-channel Kondo mechanism.
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Submitted 14 July, 2024;
originally announced July 2024.
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Influence of strain and point defects on the electronic structure and related properties of (111)NiO epitaxial films
Authors:
Bhabani Prasad Sahu,
Poonam Sharma,
Santosh Kumar Yadav,
Alok Shukla,
Subhabrata Dhar
Abstract:
(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used to ablate the target, are studied here. Films grown with higher laser fluence, are found to be embedded with Ni-clusters crystallographically aligned with the (1…
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(111)NiO epitaxial films are grown on c-sapphire substrates at various growth temperatures ranging from room-temperature to 600C using pulsed laser deposition (PLD) technique. Two series of samples, where different laser fluences are used to ablate the target, are studied here. Films grown with higher laser fluence, are found to be embedded with Ni-clusters crystallographically aligned with the (111)NiO matrix. While the layers grown with lower laser energy density exhibit p-type conductivity specially at low growth temperatures. X-ray diffraction study shows the coexistence of biaxial compressive and tensile hydrostatic strains in these samples, which results in an expansion of the lattice primarily along the growth direction. This effective uniaxial expansion {epsilon}_perpendicular increases with the reduction of the growth temperature. Band gap of these samples is found to decrease linearly with {epsilon}_perpendicular. This result is validated by density functional theory (DFT) calculations. Experimental findings and the theoretical study further indicate that V_Ni + O_I and V_O + Ni_I complexes exist as the dominant native defects in samples grown with Ni-deficient (low laser fluence) and Ni-rich (high laser fluence) conditions, respectively. P-type conductivity observed in the samples grown in Ni-deficient condition is more likely to be resulting from V_Ni + O_I defects than Ni-vacancies (V_Ni).
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Submitted 19 April, 2024;
originally announced April 2024.
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Discrepancies in dynamic yield stress measurements of cement pastes
Authors:
Subhransu Dhar,
Teresa Liberto,
Catherine Barentin,
Thibaut Divoux,
Agathe Robisson
Abstract:
The dynamic yield stress associated with the flow cessation of cement pastes is measured using a rheometer equipped with various shear geometries such as vane, helical, sandblasted co-axial cylinders, and serrated parallel plates, as well as with the mini-cone spread test. Discrepancies in yield stress values are observed for cement pastes at various volume fractions, with one to two orders of mag…
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The dynamic yield stress associated with the flow cessation of cement pastes is measured using a rheometer equipped with various shear geometries such as vane, helical, sandblasted co-axial cylinders, and serrated parallel plates, as well as with the mini-cone spread test. Discrepancies in yield stress values are observed for cement pastes at various volume fractions, with one to two orders of magnitude difference between vane, helical and mini-cone spread measurements on the one hand, and co-axial cylinder and parallel plate measurements on the other hand. To understand this discrepancy, the flow profile of a cement paste in the parallel-plate geometry is investigated with a high-speed camera, revealing the rapid formation of an un-sheared band near the static bottom plate. The width of this band depends upon the rotational velocity of the top plate, and upon the shear time. Recalculation of shear stress shows that the reduced sheared gap alone cannot explain the low measured yield stress. Further exploration suggests the formation of zones with lower particle content, possibly linked to cement particle sedimentation. Here, we argue that the complex nature of cement pastes, composed of negatively buoyant non-Brownian particles with attractive interactions due to highly charged nano-size hydration products, accounts for their complex rheological behavior.
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Submitted 19 March, 2024;
originally announced March 2024.
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Sensing atomic superfluid rotation beyond the standard quantum limit
Authors:
Rahul Gupta,
Pardeep Kumar,
Rina Kanamoto,
M. Bhattacharya,
Himadri Shekhar Dhar
Abstract:
Atomic superfluids formed using Bose-Einstein condensates (BECs) in a ring trap are currently being investigated in the context of superfluid hydrodynamics, quantum sensing and matter-wave interferometry. The characterization of the rotational properties of such superfluids is important, but can presently only be performed by using optical absorption imaging, which completely destroys the condensa…
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Atomic superfluids formed using Bose-Einstein condensates (BECs) in a ring trap are currently being investigated in the context of superfluid hydrodynamics, quantum sensing and matter-wave interferometry. The characterization of the rotational properties of such superfluids is important, but can presently only be performed by using optical absorption imaging, which completely destroys the condensate. Recent studies have proposed coupling the ring BEC to optical cavity modes carrying orbital angular momentum to make minimally destructive measurements of the condensate rotation. The sensitivity of these proposals, however, is bounded below by the standard quantum limit set by the combination of laser shot noise and radiation pressure noise. In this work, we provide a theoretical framework that exploits the fact that the interaction between the scattered modes of the condensate and the light reduces to effective optomechanical equations of motion. We present a detailed theoretical analysis to demonstrate that the use of squeezed light and backaction evasion techniques allows the angular momentum of the condensate to be sensed with noise well below the standard quantum limit. Our proposal is relevant to atomtronics, quantum sensing and quantum information.
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Submitted 20 November, 2024; v1 submitted 29 February, 2024;
originally announced February 2024.
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Observation of many-body dynamical localization
Authors:
Yanliang Guo,
Sudipta Dhar,
Ang Yang,
Zekai Chen,
Hepeng Yao,
Milena Horvath,
Lei Ying,
Manuele Landini,
Hanns-Christoph Nägerl
Abstract:
The quantum kicked rotor is a paradigmatic model system in quantum physics. As a driven quantum system, it is used to study the transition from the classical to the quantum world and to elucidate the emergence of chaos and diffusion. In contrast to its classical counterpart, it features dynamical localization, specifically Anderson localization in momentum space. The interacting many-body kicked r…
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The quantum kicked rotor is a paradigmatic model system in quantum physics. As a driven quantum system, it is used to study the transition from the classical to the quantum world and to elucidate the emergence of chaos and diffusion. In contrast to its classical counterpart, it features dynamical localization, specifically Anderson localization in momentum space. The interacting many-body kicked rotor is believed to break localization, as recent experiments suggest. Here, we present evidence for many-body dynamical localization for the Lieb-Liniger version of the many-body quantum kicked rotor. After some initial evolution, the momentum distribution of interacting quantum-degenerate bosonic atoms in one-dimensional geometry, kicked hundreds of times by means of a pulsed sinusoidal potential, stops spreading. We quantify the arrested evolution by analysing the energy and the information entropy of the system as the interaction strength is tuned. In the limiting cases of vanishing and strong interactions, the first-order correlation function exhibits a very different decay behavior. Our results shed light on the boundary between the classical, chaotic world and the realm of quantum physics.
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Submitted 21 December, 2023;
originally announced December 2023.
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Photon-photon correlation of condensed light in a microcavity
Authors:
Yijun Tang,
Himadri Shekhar Dhar,
Rupert F. Oulton,
Robert A. Nyman,
Florian Mintert
Abstract:
The study of temporal coherence in a Bose-Einstein condensate of photons can be challenging, especially in the presence of correlations between the photonic modes. In this work, we use a microscopic, multimode model of photonic condensation inside a dye-filled microcavity and the quantum regression theorem, to derive an analytical expression for the equation of motion of the photon-photon correlat…
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The study of temporal coherence in a Bose-Einstein condensate of photons can be challenging, especially in the presence of correlations between the photonic modes. In this work, we use a microscopic, multimode model of photonic condensation inside a dye-filled microcavity and the quantum regression theorem, to derive an analytical expression for the equation of motion of the photon-photon correlation function. This allows us to derive the coherence time of the photonic modes and identify a nonmonotonic dependence of the temporal coherence of the condensed light with the cutoff frequency of the microcavity.
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Submitted 25 October, 2023;
originally announced October 2023.
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Breakdown of Temporal Coherence in Photon Condensates
Authors:
Yijun Tang,
Himadri Shekhar Dhar,
Rupert F. Oulton,
Robert A. Nyman,
Florian Mintert
Abstract:
The temporal coherence of an ideal Bose gas increases as the system approaches the Bose-Einstein condensation threshold from below, with coherence time diverging at the critical point. However, counter-examples have been observed for condensates of photons formed in an externally pumped, dye-filled microcavity, wherein the coherence time decreases rapidly for increasing particle number above thres…
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The temporal coherence of an ideal Bose gas increases as the system approaches the Bose-Einstein condensation threshold from below, with coherence time diverging at the critical point. However, counter-examples have been observed for condensates of photons formed in an externally pumped, dye-filled microcavity, wherein the coherence time decreases rapidly for increasing particle number above threshold. This paper establishes intermode correlations as the central explanation for the experimentally observed dramatic decrease in the coherence time beyond critical pump power.
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Submitted 25 October, 2023;
originally announced October 2023.
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Bose-Einstein condensation of non-ground-state caesium atoms
Authors:
Milena Horvath,
Sudipta Dhar,
Arpita Das,
Matthew D. Frye,
Yanliang Guo,
Jeremy M. Hutson,
Manuele Landini,
Hanns-Christoph Nägerl
Abstract:
Bose-Einstein condensates of ultracold atoms serve as low-entropy sources for a multitude of quantum-science applications, ranging from quantum simulation and quantum many-body physics to proof-of-principle experiments in quantum metrology and quantum computing. For stability reasons, in the majority of cases the energetically lowest-lying atomic spin state is used. Here we report the Bose-Einstei…
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Bose-Einstein condensates of ultracold atoms serve as low-entropy sources for a multitude of quantum-science applications, ranging from quantum simulation and quantum many-body physics to proof-of-principle experiments in quantum metrology and quantum computing. For stability reasons, in the majority of cases the energetically lowest-lying atomic spin state is used. Here we report the Bose-Einstein condensation of caesium atoms in the Zeeman-excited mf = 2 state, realizing a non-ground-state Bose-Einstein condensate with tunable interactions and tunable loss. We identify two regions of magnetic field in which the two-body relaxation rate is low enough that condensation is possible. We characterize the phase transition and quantify the loss processes, finding unusually high three-body losses in one of the two regions. Our results open up new possibilities for the mixing of quantum-degenerate gases, for polaron and impurity physics, and in particular for the study of impurity transport in strongly correlated one-dimensional quantum wires.
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Submitted 25 April, 2024; v1 submitted 18 October, 2023;
originally announced October 2023.
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Ni cluster embedded (111)NiO layers grown on (0001)GaN films using pulsed laser deposition technique
Authors:
Simran Arora,
Shivesh Yadav,
Amandeep Kaur,
Bhabani Prasad Sahu,
Zainab Hussain,
Subhabrata Dhar
Abstract:
(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using pulsed laser deposition technique. Structural and magnetic properties of the films are examined by a variety of techniques including high resolution x-ray diffraction, precession-electron diffraction and superconducting quantum interference device magnetometry. The study r…
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(111) NiO epitaxial layers embedded with crystallographically oriented Ni-clusters are grown on c-GaN/Sapphire templates using pulsed laser deposition technique. Structural and magnetic properties of the films are examined by a variety of techniques including high resolution x-ray diffraction, precession-electron diffraction and superconducting quantum interference device magnetometry. The study reveals that the inclusion, orientation, shape, size, density and magnetic properties of these clusters depend strongly on the growth temperature (TG). Though, most of the Ni-clusters are found to be crystallographically aligned with the NiO matrix with Ni(111) parallel to NiO(111), clusters with other orientations also exist, especially in samples grown at lower temperatures. Average size and density of the clusters increase with TG . Proportion of the Ni(111) parallel to NiO(111) oriented clusters also improves as TG is increased. All cluster embedded films show ferromagnetic behaviour even at room temperature. Easy-axis is found to be oriented in the layer plane in samples grown at relatively lower temperatures. However, it turns perpendicular to the layer plane for samples grown at sufficiently high temperatures. This reversal of easy-axis has been attributed to the size dependent competition between the shape, magnetoelastic and the surface anisotropies of the clusters. This composite material thus has great potential to serve as spin-injector and spinstorage medium in GaN based spintronics of the future.
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Submitted 14 August, 2023;
originally announced August 2023.
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Cooling bosons by dimensional reduction
Authors:
Yanliang Guo,
Hepeng Yao,
Sudipta Dhar,
Lorenzo Pizzino,
Milena Horvath,
Thierry Giamarchi,
Manuele Landini,
Hanns-Christoph Nägerl
Abstract:
Cold atomic gases provide a remarkable testbed to study the physics of interacting many-body quantum systems. They have started to play a major role as quantum simulators, given the high degree of control that is possible. A crucial element is given by the necessarily non-zero temperature. However cooling to the required ultralow temperatures or even simply measuring the temperature directly on th…
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Cold atomic gases provide a remarkable testbed to study the physics of interacting many-body quantum systems. They have started to play a major role as quantum simulators, given the high degree of control that is possible. A crucial element is given by the necessarily non-zero temperature. However cooling to the required ultralow temperatures or even simply measuring the temperature directly on the system can prove to be very challenging tasks. Here, we implement thermometry on strongly interacting two- and one-dimensional Bose gases with high sensitivity in the nano-Kelvin temperature range. Our method is aided by the fact that the decay of the first-order correlation function is very sensitive to the temperature when interactions are strong. We find that there may be a significant temperature variation when the three-dimensional quantum gas is cut into two-dimensional slices or into one-dimensional tubes. Strikingly, the temperature for the one-dimensional case can be much lower than the initial temperature. Our findings show that this decrease results from the interplay of dimensional reduction and strong interactions.
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Submitted 8 August, 2023;
originally announced August 2023.
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Experimental Observation of the 2D-1D Dimensional Crossover in Strongly Interacting Ultracold Bosons
Authors:
Yanliang Guo,
Hepeng Yao,
Satwik Ramanjanappa,
Sudipta Dhar,
Milena Horvath,
Lorenzo Pizzino,
Thierry Giamarchi,
Manuele Landini,
Hanns-Christoph Nägerl
Abstract:
Dimensionality plays an essential role in determining the nature and properties of a physical system. For quantum systems the impact of interactions and fluctuations is enhanced in lower dimensions, leading to a great diversity of genuine quantum effects for reduced dimensionality. In most cases, the dimension is fixed to some integer value. Here, we experimentally probe the dimensional crossover…
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Dimensionality plays an essential role in determining the nature and properties of a physical system. For quantum systems the impact of interactions and fluctuations is enhanced in lower dimensions, leading to a great diversity of genuine quantum effects for reduced dimensionality. In most cases, the dimension is fixed to some integer value. Here, we experimentally probe the dimensional crossover from two to one dimension using strongly interacting ultracold bosons in variable lattice potentials and compare the data to ab-initio theory that takes into account non-homogeneous trapping and non-zero temperature. From a precise measurement of the momentum distribution we analyze the characteristic decay of the one-body correlation function in the two dimensionalities and then track how the decay is modified in the crossover. A varying two-slope structure is revealed, reflecting the fact that the particles see their dimensionality as being one or two depending on whether they are probed on short or long distances, respectively. Our observations demonstrate how quantum properties in the strongly-correlated regime evolve in the dimensional crossover as a result of the interplay between dimensionality, interactions, and temperature.
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Submitted 1 August, 2023;
originally announced August 2023.
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Bose-Einstein Condensation of Light in a Semiconductor Quantum Well Microcavity
Authors:
Ross C. Schofield,
Ming Fu,
Edmund Clarke,
Ian Farrer,
Aristotelis Trapalis,
Himadri S. Dhar,
Rick Mukherjee,
Jon Heffernan,
Florian Mintert,
Robert A. Nyman,
Rupert F. Oulton
Abstract:
When particles with integer spin accumulate at low temperature and high density they undergo Bose-Einstein condensation (BEC). Atoms, solid-state excitons and excitons coupled to light all exhibit BEC, which results in high coherence due to massive occupation of the respective system's ground state. Surprisingly, photons were shown to exhibit BEC much more recently in organic dye-filled optical mi…
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When particles with integer spin accumulate at low temperature and high density they undergo Bose-Einstein condensation (BEC). Atoms, solid-state excitons and excitons coupled to light all exhibit BEC, which results in high coherence due to massive occupation of the respective system's ground state. Surprisingly, photons were shown to exhibit BEC much more recently in organic dye-filled optical microcavities, which, owing to the photon's low mass, occurs at room temperature. Here we demonstrate that photons within an inorganic semiconductor microcavity also thermalise and undergo BEC. Although semiconductor lasers are understood to operate out of thermal equilibrium, we identify a region of good thermalisation in our system where we can clearly distinguish laser action from BEC. Based on well-developed technology, semiconductor microcavities are a robust system for exploring the physics and applications of quantum statistical photon condensates. Notably, photon BEC is an alternative to exciton-based BECs, which dissociate under high excitation and often require cryogenic operating conditions. In practical terms, photon BECs offer their critical behaviour at lower thresholds than lasers. Our study shows two further advantages of photon BEC in semiconductor materials: the lack of dark electronic states allows these BECs to be sustained continuously; and semiconductor quantum wells offer strong photon-photon scattering. We measure an unoptimised interaction parameter, $\tilde{g}=0.0023\pm0.0003$, which is large enough to access the rich physics of interactions within BECs, such as superfluid light or vortex formation.
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Submitted 27 June, 2023;
originally announced June 2023.
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Coexistence of surface oxygen vacancy and interface conducting states in LaAlO3/SrTiO3 revealed by low-angle resonant soft X-ray scattering
Authors:
Ming Yang,
Ariando Ariando,
Caozheng Diao,
James C Lee,
Kaushik Jayaraman,
Mansoor B A Jalil,
Serban Smadici,
Shengwei Zeng,
Jun Zhou,
Weilong Kong,
Mark B. H. Breese,
Sankar Dhar,
Yuan Ping Feng,
Peter Abbamonte,
Thirumalai Venkatesan,
Andrivo Rusydi
Abstract:
Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of…
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Oxide heterostructures have shown rich physics phenomena, particularly in the conjunction of exotic insulator-metal transition (IMT) at the interface between polar insulator LaAlO3 and non-polar insulator SrTiO3 (LaAlO3/SrTiO3). Polarization catastrophe model has suggested an electronic reconstruction yielding to metallicity at both the interface and surface. Another scenario is the occurrence of surface oxygen vacancy at LaAlO3 (surface-Ov), which has predicted surface-to-interface charge transfer yielding metallic interface but insulating surface. To clarify the origin of IMT, one should probe surface-Ov and the associated electronic structures at both the surface and the buried interface simultaneously. Here, using low-angle resonant soft X-ray scattering (LA-RSXS) supported with first-principles calculations, we reveal the co-existence of the surface-Ov state and the interface conducting state only in conducting LaAlO3/SrTiO3 (001) films. Interestingly, both the surface-Ov state and the interface conducting state are absent for the insulating film. As a function of Ov density, while the surface-Ov state is responsible for the IMT, the spatial charge distribution is found responsible for a transition from two-dimensional-like to three-dimensional-like conducting accompanied by spectral weight transfer, revealing the importance of electronic correlation. Our results show the importance of surface-Ov in determining interface properties and provides a new strategy in utilizing LA-RSXS to directly probe the surface and buried interface electronic properties in complex oxide heterostructures.
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Submitted 8 June, 2023;
originally announced June 2023.
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Spatially indirect interfacial excitons in n-ZnO/p-GaN heterostructures
Authors:
Simran Arora,
Subhabrata Dhar
Abstract:
Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low temperatures. Electroluminescence feature associated with these excitons redshifts with increasing forward bias. It has been found that the binding energy of these entit…
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Electroluminescence properties of epitaxially grown n-ZnO/p-GaN pn-heterojunctions are investigated as functions of applied bias and temperature. The study reveals the existence of indirect interfacial excitons at sufficiently low temperatures. Electroluminescence feature associated with these excitons redshifts with increasing forward bias. It has been found that the binding energy of these entities can be controlled through applied forward bias and can even be made higher than that of the excitons in ZnO bulk (60 meV). However, formation of these excitons becomes unsustainable when either the applied bias or the temperature crosses a threshold. This has been explained in terms of leakage and thermal escape of electrons (holes) into GaN (ZnO) side. Calculations for the band diagram and the binding energy of these spatially indirect electron-hole coulomb-coupled entities are carried out. Theoretical results are found to explain the experimental findings quite well.
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Submitted 16 January, 2023; v1 submitted 10 January, 2023;
originally announced January 2023.
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Protecting information in a parametrically driven hybrid quantum system
Authors:
Siddharth Tiwary,
Harsh Sharma,
Himadri Shekhar Dhar
Abstract:
The transfer and storage of quantum information in a hybrid quantum system, consisting of an ensemble of atoms or spins interacting with a cavity, is adversely affected by the inhomogeneity of the spins, which negates the coherent exchange of excitations between the physical components. Using a full quantum treatment based on variational renormalization group, we show how quantum information encod…
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The transfer and storage of quantum information in a hybrid quantum system, consisting of an ensemble of atoms or spins interacting with a cavity, is adversely affected by the inhomogeneity of the spins, which negates the coherent exchange of excitations between the physical components. Using a full quantum treatment based on variational renormalization group, we show how quantum information encoded in the states of a parametrically driven hybrid system is strongly protected against any decoherence that may arise due to the inhomogeneity in the spin-ensemble.
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Submitted 9 December, 2024; v1 submitted 28 July, 2022;
originally announced July 2022.
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Effect of strain and sulfur vacancies on the luminescence and valley polarization properties of CVD grown monolayer MoS$_2$ films
Authors:
Poulab Chakrabarti,
Faiha Mujeeb,
Subhabrata Dhar
Abstract:
Using temperature dependent photoluminescence (PL), polarization resolved PL and Raman spectroscopy, we investigate the effect of in situ vacuum annealing as well as the relaxation of strain on the luminescence and the valley polarization properties of large area strictly monolayer (1L)-MoS$_2$, grown on sapphire and SiO$_2$/Si substrates by a microcavity based chemical vapor deposition (CVD) tech…
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Using temperature dependent photoluminescence (PL), polarization resolved PL and Raman spectroscopy, we investigate the effect of in situ vacuum annealing as well as the relaxation of strain on the luminescence and the valley polarization properties of large area strictly monolayer (1L)-MoS$_2$, grown on sapphire and SiO$_2$/Si substrates by a microcavity based chemical vapor deposition (CVD) technique. The study shows that the strain as well as the physisorption of air molecules at the sulfur vacancy ($V_S$) sites play key roles in governing the optical quality of CVD grown 1L-MoS$_2$. Removal of air molecules from the $V_S$ sites enhances the relative strength of the A-exciton/trion transition as compared to the broad luminescence (BL) band arising from those defects at low temperatures. It has also been found that such removal helps in improving the valley polarization property of the film. Relaxation of biaxial tensile strain, which has been achieved by post growth transferring of 1L-MoS$_2$ film from the sapphire to a SiO$_2$/Si substrate by a polystyrene assisted transfer process, is also found to be helpful to get back the high polarization character ($\sim$80%) of the valleys. The study further shows that the transfer process not only facilitates the removal of physisorbed air molecules from the $V_S$ sites but also puts in place a long lasting capping layer on MoS$_2$ that shields the film from reacting with air and hence enhances the relative yield of A-exciton/trion transition by suppressing the BL transition. The study thus creates an opportunity to use CVD grown large area 1L-MoS$_2$ for the development of optoelectronic as well as valleytronic devices for practical applications for the future.
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Submitted 19 April, 2022;
originally announced April 2022.
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Effect of manganese incorporation on the excitonic recombination dynamics in monolayer MoS$_2$
Authors:
Poulab Chakrabarti,
Santosh Kumar Yadav,
Swarup Deb,
Subhabrata Dhar
Abstract:
Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS$_2$ grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method. These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent ph…
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Using X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM) and Raman spectroscopy techniques we investigate the incorporation of Manganese (Mn) in monolayer (1L)-MoS$_2$ grown on sapphire substrates by microcavity based chemical vapor deposition (CVD) method. These layers are coated with different amount of Mn by pulsed laser deposition (PLD) technique and temperature dependent photo-luminescence (PL) spectroscopic study has helped us in understanding how such deposition affects the dynamics of excitonic recombination in this system. The study further reveals two distinctly different Mn-incorporation regimes. Below a certain critical deposition amount of Mn, thin Mn-coating with large area coverage is found on MoS$_2$ layers and in this regime, substitution of Mo ions by Mn is detected through XPS. Dewetting takes place when Mn-deposition crosses the critical mark, which results in the formation of Mn-droplets on MoS$_2$ layers. In this regime, substitutional incorporation of Mn is suppressed, while the Raman study suggests an enhancement of disorder in the lattice with the Mn-deposition time. From PL investigation, it has been found that the increase of the amount of Mn-deposition not only enhances the density of non-radiative recombination channels for the excitons but also raises the barrier height for such recombination to take place. The study attributes these non-radiative transitions to certain Mo related defects (either Mo-vacancies or distorted Mo-S bonds), which are believed to be generated in large numbers during Mn-droplet formation stage as a result of the withdrawal of Mn ions from the Mo-substitutional sites.
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Submitted 16 January, 2022;
originally announced January 2022.
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Quest for Vortices in Photon Condensates
Authors:
Himadri S. Dhar,
Zai Zuo,
João D. Rodrigues,
Robert A. Nyman,
Florian Mintert
Abstract:
We predict that a photon condensate inside a dye-filled microcavity forms long-lived spatial structures that resemble vortices when incoherently excited by a focused pump orbiting around the cavity axis. The finely structured density of the condensates have a discrete rotational symmetry that is controlled by the orbital frequency of the pump spot and is phase-coherent over its full spatial extent…
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We predict that a photon condensate inside a dye-filled microcavity forms long-lived spatial structures that resemble vortices when incoherently excited by a focused pump orbiting around the cavity axis. The finely structured density of the condensates have a discrete rotational symmetry that is controlled by the orbital frequency of the pump spot and is phase-coherent over its full spatial extent despite the absence of any effective photon-photon interactions.
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Submitted 11 September, 2021; v1 submitted 22 April, 2021;
originally announced April 2021.
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Formation of tungsten carbide by focused ion beam process: A route to high magnetic field resilient patterned superconducting nanostructures
Authors:
Himadri Chakraborti,
Bhanu P Joshi,
Chanchal K. Barman,
Aditya K. Jain,
Buddhadeb Pal,
Bikash C. Barik,
Tanmay Maiti,
Rüdiger Schott,
M. J. N. V. Prasad,
S. Dhar,
Hridis K. Pal,
Aftab Alam,
K. Das Gupta
Abstract:
A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interestin…
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A scale for magnetic field resilience of a superconductor is set by the paramagnetic limit. Comparing the condensation energy of the Bardeen-Cooper-Schrieffer (BCS) singlet ground state with the paramagnetically polarised state suggests that for an applied field ${μ_0}H > 1.8~T_c$ (in SI), singlet pairing is not energetically favourable. Materials exceeding or approaching this limit are interesting from fundamental and technological perspectives. This may be a potential indicator of triplet superconductivity, Fulde-Ferrell-Larkin-Ovchinnikov (FFLO) pairing and other mechanisms involving topological aspects of surface states, and also allow Cooper pair injection at high magnetic fields. We have analysed the microscopic composition of such a material arising from an unexpected source. A microjet of an organo-metallic gas, $\rm {W[(CO)_6]}$ can be decomposed by gallium ion-beam, leaving behind a track of complex residue of gallium, tungsten and carbon with remarkable superconducting properties, like an upper critical field, $H_{c2} > 10~{\rm T} $, above its paramagnetic limit. We carried out Atomic probe tomography to establish the formation of nano-crystalline tungsten carbide (WC) in the tracks and the absence of free tungsten. Supporting calculations show for Ga distributed on the surface of WC, its s,p-orbitals enhance the density of states near the Fermi energy. The observed variation of $H_{c2}(T)$ does not show features typical of enhancement of critical field due to granularity. Our observations may be significant in the context of some recent theoretical calculation of the band structure of WC and experimental observation of superconductivity in WC-metal interface.
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Submitted 30 March, 2022; v1 submitted 17 March, 2021;
originally announced March 2021.
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Very thin (111) NiO epitaxial films grown on c-sapphire substrates by pulsed laser deposition technique
Authors:
Santosh Kumar Yadav,
Subhabrata Dhar
Abstract:
(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray diffraction and atomic force microscopy techniques as functions of growth temperature, oxygen pressure and the pulses count of the laser. The study shows that continuous…
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(111)NiO epitaxial layers are grown on c-sapphire substrates by pulsed laser deposition (PLD) technique. Structural and morphological properties of the films are studied using in-plane as well as out-of-plane high resolution X-ray diffraction and atomic force microscopy techniques as functions of growth temperature, oxygen pressure and the pulses count of the laser. The study shows that continuous epitaxial films of thickness as low as 3 nm with high crystalline quality, smooth surface and interface morphology can be grown by this technique. The study also reveals the co-existence of 60°-rotated (111) triangular domains of NiO in the film. The study also evidences the presence of a very low density of 60-degree dislocations in these films. Density of screw and edge dislocations are also estimated to be quite low. It has been found that growth-temperature, oxygen partial pressure and the film thickness can influence differently the density of various dislocation types. These parameters are also found to affect significantly the strain developed in the films.
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Submitted 7 March, 2021;
originally announced March 2021.
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Spin transport in polarization induced two dimensional confinement of carriers in wedge shaped \textit{c}-GaN nanowalls
Authors:
Swarup Deb,
Subhabrata Dhar
Abstract:
Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric.…
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Spin transport property of polarization induced two-dimensional electron gas channel formed in the central vertical plane of a wedge-shaped \textit{c}-oriented GaN nanowall is investigated theoretically. Since the confining potential preserves the spatial symmetry between the conduction and valence band, the Rashba effect is suppressed in this system even when the shape of the wedge is asymmetric. It has been found that the relaxation of the electron spin oriented along the direction of the confinement via D'yakonov-Perel' (DP) mechanism, which is the dominant process of relaxation in this high mobility channel, is entirely switched off at low temperatures. Spin relaxation can be turned on by applying a suitable bias at the gate. Exploiting this remarkable effect, a novel all electrically driven spin-transistor has been proposed.
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Submitted 17 July, 2020;
originally announced July 2020.
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Learning the Fuzzy Phases of Small Photonic Condensates
Authors:
João D. Rodrigues,
Himadri S. Dhar,
Benjamin T. Walker,
Jason M. Smith,
Rupert F. Oulton,
Florian Mintert,
Robert A. Nyman
Abstract:
Phase transitions, being the ultimate manifestation of collective behaviour, are typically features of many-particle systems only. Here, we describe the experimental observation of collective behaviour in small photonic condensates made up of only a few photons. Moreover, a wide range of both equilibrium and non-equilibrium regimes, including Bose-Einstein condensation or laser-like emission are i…
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Phase transitions, being the ultimate manifestation of collective behaviour, are typically features of many-particle systems only. Here, we describe the experimental observation of collective behaviour in small photonic condensates made up of only a few photons. Moreover, a wide range of both equilibrium and non-equilibrium regimes, including Bose-Einstein condensation or laser-like emission are identified. However, the small photon number and the presence of large relative fluctuations places major difficulties in identifying different phases and phase transitions. We overcome this limitation by employing unsupervised learning and fuzzy clustering algorithms to systematically construct the fuzzy phase diagram of our small photonic condensate. Our results thus demonstrate the rich and complex phase structure of even small collections of photons, making them an ideal platform to investigate equilibrium and non-equilibrium physics at the few particle level.
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Submitted 23 March, 2021; v1 submitted 19 June, 2020;
originally announced June 2020.
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Tunability of electrical and thermoelectrical properties of monolayer MoS$_2$ through oxygen passivation
Authors:
Swarup Deb,
Pritam Bhattacharyya,
Poulab Chakrabarti,
Himadri Chakraborti,
Kantimay Das Gupta,
Alok Shukla,
Subhabrata Dhar
Abstract:
Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of mag…
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Electric and thermoelectric properties of strictly monolayer MoS$_2$ films, which are grown using a novel micro-cavity based CVD growth technique, have been studied under diverse environmental and annealing conditions. Resistance of a thermoelectric device that is fabricated on a continuous monolayer MoS$_2$ layer using photolithography technique has been found to reduce by about six orders of magnitudes upon annealing in vacuum at 525 K. Seebeck coefficient of the layer also reduces by almost an order of magnitude upon annealing. When the sample is exposed to oxygen atmosphere, these parameters return to their previous values. In fact, it has been found that the electron concentration, mobility as well as the thermoelectric power of the material can be tuned by controlling the temperature of annealing and oxygen exposure. Once established, these values are maintained as long as the layer is not exposed to oxygen environment. This can offer a unique way to control doping in the material provided an effective encapsulation method is devised. Such control is an important step forward for device application. The effect has been attributed to the passivation of di-sulfur vacancy donors present in the MoS$_2$ film by physisorbed oxygen molecules. Band structural calculations using density functional theory have been carried out, results of which indeed validate this picture.
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Submitted 7 March, 2020;
originally announced March 2020.
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Anisotropic magnetic properties of trigonal ErAl$_2$Ge$_2$ single crystal
Authors:
Moumita Nandi,
A. Thamizhavel,
S. K. Dhar
Abstract:
We report the anisotropic magnetic properties of the ternary compound ErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray diffraction we confirmed that ErAl$_2$Ge$_2$ crystallizes in the trigonal CaAl$_2$Si$_2$-type crystal structure. The anisotropic magnetic properties of a single…
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We report the anisotropic magnetic properties of the ternary compound ErAl$_2$Ge$_2$. Single crystals of this compound were grown by high temperature solution growth technique,using Al:Ge eutectic composition as flux. From the powder x-ray diffraction we confirmed that ErAl$_2$Ge$_2$ crystallizes in the trigonal CaAl$_2$Si$_2$-type crystal structure. The anisotropic magnetic properties of a single crystal were investigated by measuring the magnetic susceptibility, magnetization, heat capacity and electrical resistivity. A bulk magnetic ordering occurs around 4 K inferred from the magnetic susceptibility and the heat capacity. The magnetization measured along the $ab$-plane increases more rapidly than along the $c$-axis suggesting the basal $ab$-plane as the easy plane of magnetization. The magnetic susceptibility, magnetization and the $4f$-derived part of the heat capacity in the paramagnetic regime analysed based on the point charge model of the crystalline electric field (CEF) indicate a relatively low CEF energy level splitting.
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Submitted 18 November, 2019;
originally announced November 2019.
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Signature of jamming under steady shear in dense particulate suspensions
Authors:
Subhransu Dhar,
Sebanti Chattopadhyay,
Sayantan Majumdar
Abstract:
Under an increasing applied shear stress ($σ$), viscosity of many dense particulate suspensions increases drastically beyond a stress onset ($σ_0$), a phenomenon known as discontinuous shear-thickening (DST). Recent studies point out that some suspensions can transform into a stress induced solid-like shear jammed (SJ) state at high particle volume fraction ($φ$). SJ state develops a finite yield…
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Under an increasing applied shear stress ($σ$), viscosity of many dense particulate suspensions increases drastically beyond a stress onset ($σ_0$), a phenomenon known as discontinuous shear-thickening (DST). Recent studies point out that some suspensions can transform into a stress induced solid-like shear jammed (SJ) state at high particle volume fraction ($φ$). SJ state develops a finite yield stress and hence is distinct from a shear-thickened state. Here, we study the steady state shear-thickening behaviour of dense suspensions formed by dispersing colloidal polystyrene particles (PS) in polyethylene glycol (PEG). We find that for small $σ$ values the viscosity of the suspensions as a function of $φ$ can be well described by Krieger-Dougherty (KD) relation. However, for higher values of $σ$ ($>> σ_0$), KD relation systematically overestimates the measured viscosity, particularly for higher $φ$ values. This systematic deviation can be rationalized by the weakening of the sample due to flow induced failures of the solid-like SJ state. Using Wyart-Cates model, we propose a method to predict the SJ onset from the steady state rheology measurements. Our results are further supported by in-situ optical imaging of the sample boundary under shear.
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Submitted 22 November, 2019; v1 submitted 20 August, 2019;
originally announced August 2019.
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Non-stationary Statistics and Formation Jitter in Transient Photon Condensation
Authors:
Benjamin T. Walker,
João D. Rodrigues,
Himadri S. Dhar,
Rupert F. Oulton,
Florian Mintert,
Robert A. Nyman
Abstract:
While equilibrium phase transitions are well described by a free-energy landscape, there are few tools to describe general features of their non-equilibrium counterparts. On the other hand, near-equilibrium free-energies are easily accessible but their full geometry is only explored in non-equilibrium, e.g. after a quench. In the particular case of a non-stationary system, however, the concepts of…
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While equilibrium phase transitions are well described by a free-energy landscape, there are few tools to describe general features of their non-equilibrium counterparts. On the other hand, near-equilibrium free-energies are easily accessible but their full geometry is only explored in non-equilibrium, e.g. after a quench. In the particular case of a non-stationary system, however, the concepts of an order parameter and free energy become ill-defined, and a comprehensive understanding of non-stationary (transient) phase transitions is still lacking. Here, we probe transient non-equilibrium dynamics of an optically pumped, dye-filled microcavity which exhibits near-equilibrium Bose-Einstein condensation under steady-state conditions. By rapidly exciting a large number of dye molecules, we quench the system to a far-from-equilibrium state and, close to a critical excitation energy, find delayed condensation, interpreted as a transient equivalent of critical slowing down. We introduce the two-time, non-stationary, second-order correlation function as a powerful experimental tool for probing the statistical properties of the transient relaxation dynamics. In addition to number fluctuations near the critical excitation energy, we show that transient phase transitions exhibit a different form of diverging fluctuations, namely timing jitter in the growth of the order parameter. This jitter is seeded by the randomness associated with spontaneous emission, with its effect being amplified near the critical point. The general character of our results are then discussed based on the geometry of effective free-energy landscapes. We thus identify universal features, such as the formation timing jitter, for a larger set of systems undergoing transient phase transitions. Our results carry immediate implications to diverse systems, including micro- and nano-lasers and growth of colloidal nanoparticles.
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Submitted 15 August, 2019;
originally announced August 2019.
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Effect of copper content on thermal and mechanical properties of eutectoid zn-al alloy
Authors:
A. R. Khan,
T. Ahmed,
M. K. Islam,
S. A. Dhar,
M. R. Qadir
Abstract:
Zn-Al alloys have become one of the major engineering alloys among commercially available alloys. This study was conducted on eutectoid composition of Zn-Al alloy with an observation of the effect of copper addition. For this purpose, one eutectoid (Zn-22wt%Al) and three other alloys, adding 1wt%, 3wt% and 5wt% copper with this eutectoid composition, were molded in permanent metal mould. Microscop…
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Zn-Al alloys have become one of the major engineering alloys among commercially available alloys. This study was conducted on eutectoid composition of Zn-Al alloy with an observation of the effect of copper addition. For this purpose, one eutectoid (Zn-22wt%Al) and three other alloys, adding 1wt%, 3wt% and 5wt% copper with this eutectoid composition, were molded in permanent metal mould. Microscopic studies exhibited varied grains which confirmed the formation of different phases. Moreover, the formation of different phases in micro study was supported by XRD analysis. Hardness of the samples were tested on Rockwell B scale and it was observed that the hardness of these alloys was substantially increased with the addition of copper. With increasing amount of copper, phase changing temperature of the alloys reveals a growing trend, which was observed by DTA analysis. From this study it was concluded that addition of copper can significantly add to the mechanical properties of Zn-Al alloys.
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Submitted 9 January, 2019; v1 submitted 6 January, 2019;
originally announced January 2019.
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Demonstration of defect-defect ferromagnetic coupling in Gd doped GaN epitaxial films: A polarization selective magneto-photoluminescence study
Authors:
Rajendra K. Saroj,
Preetha Sarkar,
Swarup Deb,
S. Dhar
Abstract:
Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The st…
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Magnetic field dependent polarization selective photoluminescence(PL) study has been carried out at 1.5~K on Gd-doped GaN epitaxial layers grown on c-SiC substrates by molecular beam epitaxy technique. It has been found that the incorporation of Gd in GaN leads to the generation of three types of donor like defects that result in neutral donor bound excitonic features in low temperature PL. The study reveals that the rate of spin-flip scattering for all the three excitonic features becomes almost $B$-independent suggesting that these signals must be stemming from defects which are ferromagnetically coupled with each other. This is further confirmed by the study carried out on a GaN sample co-doped with Si and Gd, where defects are found to be ferromagnetically coupled, while Si-donors do not show any involvement in coupling.
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Submitted 13 December, 2018;
originally announced December 2018.
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Influence of anti-site disorder and electron-electron correlations on the electronic structure of CeMnNi$_4$
Authors:
Pampa Sadhukhan,
Sunil Wilfred D'Souza,
Vipin Kumar Singh,
Rajendra Singh Dhaka,
Andrei Gloskovskii,
Sudesh Kumar Dhar,
Pratap Raychaudhuri,
Ashish Chainani,
Aparna Chakrabarti,
Sudipta Roy Barman
Abstract:
CeMnNi$_4$ exhibits an unusually large spin polarization, but its origin has baffled researchers for more than a decade. We use bulk sensitive hard x-ray photoelectron spectroscopy (HAXPES) and density functional theory based on the Green's function technique to demonstrate the importance of electron-electron correlations of both the Ni 3$d$ ($U_{Ni}$) and Mn 3$d$ ($U_{Mn}$) electrons in explainin…
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CeMnNi$_4$ exhibits an unusually large spin polarization, but its origin has baffled researchers for more than a decade. We use bulk sensitive hard x-ray photoelectron spectroscopy (HAXPES) and density functional theory based on the Green's function technique to demonstrate the importance of electron-electron correlations of both the Ni 3$d$ ($U_{Ni}$) and Mn 3$d$ ($U_{Mn}$) electrons in explaining the valence band of this multiply correlated material. We show that Mn-Ni anti-site disorder as well as $U_{Ni}$ play crucial role in enhancing its spin polarization: anti-site disorder broadens a Ni 3$d$ minority-spin peak close to the Fermi level ($E_F$), while an increase in $U_{Ni}$ shifts it towards $E_F$, both leading to a significant increase of minority-spin states at $E_F$. Furthermore, rare occurrence of a valence state transition between the bulk and the surface is demonstrated highlighting the importance of HAXPES in resolving the electronic structure of materials unhindered by surface effects.
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Submitted 4 October, 2018;
originally announced October 2018.
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Effect of long-range interactions on multipartite entanglement in Heisenberg chains
Authors:
Sudipto Singha Roy,
Himadri Shekhar Dhar
Abstract:
It is well known that the notions of spatial locality are often lost in quantum systems with long-range interactions, as exhibited by the emergence of phases with exotic long-range order and faster propagation of quantum correlations. We demonstrate here that such induced ``quasinonlocal" effects do not necessarily translate to growth of global entanglement in the quantum system. By investigating…
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It is well known that the notions of spatial locality are often lost in quantum systems with long-range interactions, as exhibited by the emergence of phases with exotic long-range order and faster propagation of quantum correlations. We demonstrate here that such induced ``quasinonlocal" effects do not necessarily translate to growth of global entanglement in the quantum system. By investigating the ground and quenched states of the variable-range, spin-1/2 Heisenberg Hamiltonian, we observe that the genuine multiparty entanglement in the system can either increase or counterintuitively diminish with a growing range of interactions. The behavior is reflective of the underlying phase structure of the quantum system and provides key insights for generation of multipartite entanglement in experimental atomic, molecular, and optical physics where such variable-range interactions have been implemented.
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Submitted 17 June, 2019; v1 submitted 7 September, 2018;
originally announced September 2018.
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Non-Fermi-liquid behavior at anti-ferromagnetic quantum critical point in heavy fermion system Ce(Cu$_{1-x}$Co$_x$)$_2$Ge$_2$
Authors:
Rajesh Tripathi,
Debarchan Das,
C. Geibel,
S. K. Dhar,
Z. Hossain
Abstract:
Polycrystalline samples of Ce(Cu$_{1-x}$Co$_x$)$_2$Ge$_2$ were investigated by means of electrical resistivity $ρ$($T$), magnetic susceptibility $χ$($T$), specific heat $C$$_p$($T$) and thermo electric power $S$($T$) measurements. The long-range antiferromagnetic (AFM) order, which set in at $T$$_N$ = 4.1 K in CeCu$_2$Ge$_2$, is suppressed by non-iso-electronic cobalt (Co) doping at a critical val…
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Polycrystalline samples of Ce(Cu$_{1-x}$Co$_x$)$_2$Ge$_2$ were investigated by means of electrical resistivity $ρ$($T$), magnetic susceptibility $χ$($T$), specific heat $C$$_p$($T$) and thermo electric power $S$($T$) measurements. The long-range antiferromagnetic (AFM) order, which set in at $T$$_N$ = 4.1 K in CeCu$_2$Ge$_2$, is suppressed by non-iso-electronic cobalt (Co) doping at a critical value of the concentration $x$$_c$ = 0.6, accompanied by non-Fermi liquid (NFL) behavior inferred from the power law dependence of heat capacity and susceptibility i.e. $C$($T$)/$T$ and $χ$($T$) $\propto$ $T$$^{-1+λ}$ down to 0.4 K, along with a clear deviation from $T$$^2$ behavior of the electrical resistivity. However, we have not seen any superconducting phase in the quantum critical regime down to 0.4 K.
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Submitted 16 August, 2018;
originally announced August 2018.
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Effect of magnetic and non-magnetic impurities on the spin dimers in the spin 1/2 chains of quantum magnet Sr$_{14}$Cu$_{24}$O$_{41}$
Authors:
Rabindranath Bag,
Koushik Karmakar,
Sudesh Dhar,
Malvika Tripathi,
R. J. Choudhary,
Surjeet Singh
Abstract:
We study the effect of impurities on the two types of spin-dimers in the hybrid chain/ladder spin 1/2 quantum magnet Sr$_{14}$Cu$_{24}$O$_{41}$. Four different impurities were used, namely, the non-magnetic Zn (0.0025 and 0.01 per Cu) and Al (0.0025 and 0.01 per Cu), and magnetic Ni (0.0025 and 0.01 per Cu) and Co (0.01, 0.03, 0.05 and 0.1 per Cu). These impurities were doped in high-quality singl…
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We study the effect of impurities on the two types of spin-dimers in the hybrid chain/ladder spin 1/2 quantum magnet Sr$_{14}$Cu$_{24}$O$_{41}$. Four different impurities were used, namely, the non-magnetic Zn (0.0025 and 0.01 per Cu) and Al (0.0025 and 0.01 per Cu), and magnetic Ni (0.0025 and 0.01 per Cu) and Co (0.01, 0.03, 0.05 and 0.1 per Cu). These impurities were doped in high-quality single-crystals synthesized by the floating zone method. The magnetic susceptibility of pristine Sr$_{14}$Cu$_{24}$O$_{41}$ is analyzed rigorously to confirm that at low temperatures (T $<$ 5 K), the "free" spins in the chains undergo a long-distance dimerization as proposed in a recent study [Sahling et al. Nature Phys., \textbf{11}, 255 (2015)]. The effect of impurity on these dimers is analyzed by measuring the specific heat down to T = 0.06 K. We found that even at the lower impurity concentration, the long-distance dimers are significantly severed, but the quantum entangled spin dimerized state of the chains persists. On the other hand, the other type of spin dimers that forms at relatively higher temperatures via an intervening Zhang-Rice singlet are found to be practically unaffected at the lower impurity concentration; but at 1\% doping, even these are found to be considerably severed. The effect of Co impurity turned out to be most unusual displaying a strongly anisotropic response, and with a dimerization gap that suppresses faster along the chain/ladder direction than perpendicular to it as a function of increasing Co concentration.
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Submitted 2 August, 2018;
originally announced August 2018.
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Spin correlation in trigonal EuMn$_{2}$As$_{2}$
Authors:
A. Dahal,
Yiyao Chen,
T. Heitmann,
A. Thamizhavel,
S. K. Dhar,
D. K. Singh
Abstract:
The trigonal structure of EuMn$_{2}$As$_{2}$ is an anomaly in the tetragonal 122-type pnictide family. We report detailed investigation of the underlying magnetic correlations in single crystal EuMn$_{2}$As$_{2}$ using high resolution elastic neutron scattering measurements. The system undergoes through two successive antiferromagnetic transitions at $T$ = 135 K and 14.4 K, respectively. Numerical…
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The trigonal structure of EuMn$_{2}$As$_{2}$ is an anomaly in the tetragonal 122-type pnictide family. We report detailed investigation of the underlying magnetic correlations in single crystal EuMn$_{2}$As$_{2}$ using high resolution elastic neutron scattering measurements. The system undergoes through two successive antiferromagnetic transitions at $T$ = 135 K and 14.4 K, respectively. Numerical modeling of the experimental data reveals the long range antiferromagnetic correlation of Mn-ions in the $a-b$ plane below $T_N1$ = 135 K. Mn spins are aligned closer to the diagonal axis of the unit cell. The lower temperature transition, below $T_N2$ = 14.4 K, is found to arise due to the long range antiferromagnetic correlation of Eu spins that are rotated by $θ$ = 55 degree from the $c$-axis of the unit cell.
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Submitted 31 July, 2018; v1 submitted 28 July, 2018;
originally announced July 2018.
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Magnetocrystalline anisotropy in the Kondo lattice compound CeAgAs$_2$
Authors:
Rajib Mondal,
Rudheer Bapat,
S. K. Dhar,
A. Thamizhavel
Abstract:
We report on the single crystal growth and anisotropic physical properties of CeAgAs$_2$. The compound crystallizes as on ordered variant of the HfCuSi$_2$-type crystal structure and adopts the orthorhombic space group $Pmca$~(\#57) with two symmetry inequivalent cerium atomic positions in the unit cell. The orthorhombic crystal structure of our single crystal was confirmed from the powder x-ray d…
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We report on the single crystal growth and anisotropic physical properties of CeAgAs$_2$. The compound crystallizes as on ordered variant of the HfCuSi$_2$-type crystal structure and adopts the orthorhombic space group $Pmca$~(\#57) with two symmetry inequivalent cerium atomic positions in the unit cell. The orthorhombic crystal structure of our single crystal was confirmed from the powder x-ray diffraction and from electron diffraction patterns obtained from the transmission electron microscope. The anisotropic physical properties have been investigated on a good quality single crystal by measuring the magnetic susceptibility, isothermal magnetization, electrical transport and heat capacity. The magnetic susceptibility and magnetization measurements revealed that this compound orders antiferromagnetically with two closely spaced magnetic transitions at $T_{\rm N1} = 6$~K and $T_{\rm N2} = 4.9$~K. Magnetization studies have revealed a large magnetocrystalline anisotropy due to the crystalline electric field (CEF) with an easy axis of magnetization along the [010] direction. The magnetic susceptibility measured along the [001] direction exhibited a broad hump in the temperature range 50 to 250~K, while typical Curie-Weiss behaviour was observed along the other two orthogonal directions. The electrical resistivity and the heat capacity measurements revealed that CeAgAs$_2$ is a Kondo lattice system with a magnetic ground state.
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Submitted 19 July, 2018;
originally announced July 2018.
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Tensor-network approach to compute genuine multisite entanglement in infinite quantum spin chains
Authors:
Sudipto Singha Roy,
Himadri Shekhar Dhar,
Aditi Sen De,
Ujjwal Sen
Abstract:
We devise a method based on the tensor-network formalism to calculate genuine multisite entanglement in ground states of infinite spin chains containing spin-1/2 or spin-1 quantum particles. The ground state is obtained by employing an infinite time-evolving block decimation method acting upon an initial matrix product state for the infinite spin system. We explicitly show how such infinite matrix…
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We devise a method based on the tensor-network formalism to calculate genuine multisite entanglement in ground states of infinite spin chains containing spin-1/2 or spin-1 quantum particles. The ground state is obtained by employing an infinite time-evolving block decimation method acting upon an initial matrix product state for the infinite spin system. We explicitly show how such infinite matrix product states with translational invariance provide a natural framework to derive the generalized geometric measure, a computable measure of genuine multisite entanglement, in the thermodynamic limit of quantum many-body systems with both spin-1/2 and higher-spin particles.
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Submitted 6 June, 2019; v1 submitted 11 July, 2018;
originally announced July 2018.
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Effect of Dissolved Oxygen Content on Photocatalytic Performance of Graphene Oxide
Authors:
M. Bakhtiar Azim,
Farzana Nargis,
Sajib Aninda Dhar,
Md. Rakibul Qadir,
Md. Abdul Gafur,
A. S. W Kurny,
Fahmida Gulshan
Abstract:
Graphene, a two-dimensional (2D) promising emergent photocatalyst consisting of earth-abundant elements. This study evaluated the potential of graphene oxide (GO) towards photocatalytic degradation of a novel organic dye, Methylene Blue (MB). In this work, photocatalytic activity of graphene oxide (GO), graphene oxide (GO) along with hydrogen peroxide (H2O2) were tested by photodegrading Methylene…
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Graphene, a two-dimensional (2D) promising emergent photocatalyst consisting of earth-abundant elements. This study evaluated the potential of graphene oxide (GO) towards photocatalytic degradation of a novel organic dye, Methylene Blue (MB). In this work, photocatalytic activity of graphene oxide (GO), graphene oxide (GO) along with hydrogen peroxide (H2O2) were tested by photodegrading Methylene Blue (MB) in aqueous solution. The resulted GO nanoparticles were characterized by X-ray powder diffraction, Scanning Electron Microscopy, Energy Dispersive Spectroscopy and Fourier Transform Infrared Ray Spectroscopy. The XRD data confirms the sharp peak centered at 2Theta=10.44 degree corresponding to (002) reflection of GO. Based on our results, it was found that the resulted GO nanoparticles along with H2O2 achieved ~92% photodecolorization of MB compared to ~63% for H2O2 under natural sunlight irradiation at pH~7 in 60 min. The influences of oxygen and hydrogen peroxide (H2O2) on the degradation of MB during sunlight/GO process were investigated. Experimental results indicated that oxygen was a determining parameter for promoting the photocatalytic degradation. The rate constant of degradation (k1) increased from 0.019 to 0.042 per minute for dissolved oxygen content (DOC) 3.5 mg/L when direct photocatalysis (MB/GO) and H2O2-assisted photocatalysis (MB/H2O2/GO) were used. Owing to the fact that H2O2 acted as an electron and hydroxyl radicals scavenger, the addition of H2O2 should in a proper dosage to enhance the degradation of MB. Moreover, as the initial concentration of dissolved oxygen (DO) was increased from 2.8 to 3.9 mg/L, the rate constant of degradation (k1) increased from 0.035 to 0.062 per minute. The mechanism of photodegradation and kinetics were also studied for both direct photocatalysis and H2O2-assisted photocatalysis.
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Submitted 20 June, 2018; v1 submitted 18 June, 2018;
originally announced June 2018.
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Variational Renormalization Group for Dissipative Spin-Cavity Systems: Periodic Pulses of Nonclassical Photons from Mesoscopic Spin Ensembles
Authors:
Himadri Shekhar Dhar,
Matthias Zens,
Dmitry O. Krimer,
Stefan Rotter
Abstract:
Mesoscopic spin ensembles coupled to a cavity offer the exciting prospect of observing complex nonclassical phenomena that pool the microscopic features from a few spins with those of macroscopic spin ensembles. Here, we demonstrate how the collective interactions in an ensemble of as many as hundred spins can be harnessed to obtain a periodic pulse train of nonclassical light. To unravel the full…
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Mesoscopic spin ensembles coupled to a cavity offer the exciting prospect of observing complex nonclassical phenomena that pool the microscopic features from a few spins with those of macroscopic spin ensembles. Here, we demonstrate how the collective interactions in an ensemble of as many as hundred spins can be harnessed to obtain a periodic pulse train of nonclassical light. To unravel the full quantum dynamics and photon statistics, we develop a time-adaptive variational renormalization group method that accurately captures the underlying Lindbladian dynamics of the mesoscopic spin-cavity system.
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Submitted 30 September, 2018; v1 submitted 6 June, 2018;
originally announced June 2018.
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Fibonacci sequence and its generalizations in doped quantum spin ladders
Authors:
Sudipto Singha Roy,
Himadri Shekhar Dhar,
Aditi Sen De,
Ujjwal Sen
Abstract:
An interesting aspect of antiferromagnetic quantum spin ladders, with complete dimer coverings, is that the wave function can be recursively generated by estimating the number of coverings in the valence bond basis, which follow the fabled Fibonacci sequence. In this work, we derive generalized forms of this sequence for multi-legged and doped quantum spin ladders, which allow the corresponding di…
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An interesting aspect of antiferromagnetic quantum spin ladders, with complete dimer coverings, is that the wave function can be recursively generated by estimating the number of coverings in the valence bond basis, which follow the fabled Fibonacci sequence. In this work, we derive generalized forms of this sequence for multi-legged and doped quantum spin ladders, which allow the corresponding dimer-covered state to be recursively generated. We show that these sequences allow for estimation of physically and information-theoretically relevant quantities in large spin lattices without resorting to complex numerical methods. We apply the formalism to calculate the valence bond entanglement entropy, which is an important figure of merit for studying cooperative phenomena in quantum spin systems with SU(2) symmetry. We show that introduction of doping may mitigate, within the quarters of entanglement entropy, the dichotomy between odd- and even- legged quantum spin ladders.
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Submitted 4 February, 2019; v1 submitted 7 December, 2017;
originally announced December 2017.
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Extreme magnetoresistance induced by Zeeman effect-driven electron-hole compensation and topological protection in MoSi$_2$
Authors:
M. Matin,
R. Mondal,
N. Barman,
A. Thamizhavel,
S. K. Dhar
Abstract:
The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several non-magnetic semimetals, which has been explained on the basis of either electron-hole compensation or the Fermi surface topology, or the combination of both. Here, we present a single crystal study on MoSi$_2$, which exhibits…
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The magnetoresistance is the magnetic field induced change of electrical resistivity of a material. Recent studies have revealed extremely large magnetoresistance in several non-magnetic semimetals, which has been explained on the basis of either electron-hole compensation or the Fermi surface topology, or the combination of both. Here, we present a single crystal study on MoSi$_2$, which exhibits extremely large magnetoresistance, approaching almost 10$^7$ % at 2 K and 14 T magnetic field. It is found that the electron-hole compensation level in MoSi$_2$ evolves with magnetic field, which is resulted from strong Zeeman effect, and found beneficial in boosting the large non-saturating magnetoresistance. The non-trivial Berry phase in the de Haas-van Alphen oscillations and the moderate suppression of backward scattering of the charge carriers lend support for the topological nature of this semimetal. The ultra-large carrier mobility of the topologically protected charge carriers reinforces the magnetoresistance of MoSi2 to an unprecedented large value.
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Submitted 27 November, 2017;
originally announced November 2017.
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Adiabatic freezing of entanglement with insertion of defects in a one-dimensional Hubbard model
Authors:
Sreetama Das,
Sudipto Singha Roy,
Himadri Shekhar Dhar,
Debraj Rakshit,
Aditi Sen De,
Ujjwal Sen
Abstract:
We report on ground state phases of a doped one-dimensional Hubbard model, which for large onsite interactions is governed by the $t$-$J$ Hamiltonian, where the extant entanglement is immutable under perturbative or sudden changes of system parameters, a phenomenon termed as adiabatic freezing. We observe that in the metallic Luttinger liquid phase of the model bipartite entanglement decays polyno…
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We report on ground state phases of a doped one-dimensional Hubbard model, which for large onsite interactions is governed by the $t$-$J$ Hamiltonian, where the extant entanglement is immutable under perturbative or sudden changes of system parameters, a phenomenon termed as adiabatic freezing. We observe that in the metallic Luttinger liquid phase of the model bipartite entanglement decays polynomially and is adiabatically frozen, in contrast to the variable, exponential decay in the phase-separation and superconducting spin-gap phases. Significantly, at low fixed electron densities, the spin-gap phase shows remarkable affinity to doped resonating valence bond gas, with multipartite entanglement frozen across all parameter space. We note that entanglement, in general, is sensitive to external perturbation, as observed in several systems, and hitherto, no such invariance or freezing behavior has been reported.
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Submitted 14 September, 2018; v1 submitted 23 August, 2017;
originally announced August 2017.
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One step growth of GaN/SiO2 core/shell nanowire in vapor-liquid-solid route by chemical vapor deposition technique
Authors:
B. K. Barick,
Shivesh Yadav,
S. Dhar
Abstract:
GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growt…
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GaN/SiO2 core/shell nanowires are grown by cobalt phthalocyanine catalyst assisted vapor-liquid-solid route, in which Si wafer coated with a mixture of gallium and indium is used as the source for Ga and Si and ammonia is used as the precursor for nitrogen and hydrogen. Gallium in the presence of indium and hydrogen, which results from the dissociation of ammonia, forms Si-Ga-In alloy at the growth temperature around 910 degree Celsius. This alloy acts as the source of Si, Ga and In. A detailed study using a variety of characterization tools reveals that these wires, which are several tens of micron long, has a diameter distribution of the core ranging from 20 to 50 nm, while the thickness of the amorphous SiO2 shell layer is about 10 nm. These wires grow along direction. It has also been observed that the average width of these wires decreases, while their density increases as the gallium proportion in the Ga-In mixture is increased.
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Submitted 4 July, 2017;
originally announced July 2017.
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Network of vertically c-oriented prism shaped InN nanowalls grown on c-GaN/sapphire template by chemical vapor deposition technique
Authors:
B. K. Barick,
Rajendra Kumar Saroj,
Nivedita Prasad,
S. Dhar
Abstract:
Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [11-20] and [0001] directions leading to the formation of such a ne…
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Networks of vertically c-oriented prism shaped InN nanowalls, are grown on c-GaN/sapphire templates using a CVD technique, where pure indium and ammonia are used as metal and nitrogen precursors. A systematic study of the growth, structural and electronic properties of these samples shows a preferential growth of the islands along [11-20] and [0001] directions leading to the formation of such a network structure, where the vertically [0001] oriented tapered walls are laterally align along one of the three [11-20] directions. Inclined facets of these walls are identified as r-planes [(1-102)-planes] of wurtzite InN. Onset of absorption for these samples is observed to be higher than the band gap of InN suggesting a high background carrier concentration in this material. Study of the valence band edge through XPS indicates the formation of positive depletion regions below the r-plane side facets of the walls. This is in contrast with the observation for c-plane InN epilayers, where electron accumulation is often reported below the top surface.
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Submitted 24 June, 2017;
originally announced June 2017.
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Photoinduced electromotive force on the surface of InN epitaxial layers
Authors:
B. K. Barick,
S. Dhar
Abstract:
We report the generation of photo-induced electromotive force (EMF) on the surface of c-axis oriented InN epitaxial films grown on sapphire substrates. It has been found that under the illumination of above band gap light, EMFs of different magnitudes and polarities are developed on different parts of the surface of these layers. The effect is not the same as the surface photovoltaic or Dember pot…
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We report the generation of photo-induced electromotive force (EMF) on the surface of c-axis oriented InN epitaxial films grown on sapphire substrates. It has been found that under the illumination of above band gap light, EMFs of different magnitudes and polarities are developed on different parts of the surface of these layers. The effect is not the same as the surface photovoltaic or Dember potential effects, both of which result in the development of EMF across the layer thickness, not between different contacts on the surface. These layers are also found to show negative photoconductivity effect. Interplay between surface photo-EMF and negative photoconductivity result in a unique scenario, where the magnitude as well as the sign of the photo-induced change in conductivity become bias dependent. A theoretical model is developed, where both the effects are attributed to the 2D electron gas (2DEG) channel formed just below the film surface as a result of the transfer of electrons from certain donor-like-surfacestates, which are likely to be resulting due to the adsorption of certain groups/adatoms on the film surface. In the model, the photo-EMF effect is explained in terms of a spatially inhomogeneous distribution of these groups/adatoms over the surface resulting in a lateral non-uniformity in the depth distribution of the potential profile confining the 2DEG. Existence of such an inhomogeneity in the distribution of surface potential has indeed been experimentally found for these layers.
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Submitted 16 June, 2017;
originally announced June 2017.