Showing 1–3 of 3 results for author: Deville, G

1/f noise in a dilute GaAs two-dimensional hole system in the insulating phase

Authors: G. Deville, R. Leturcq, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradi… ▽ More We have measured the resistance and the 1/f resistance noise of a two-dimensional low density hole system in a high mobility GaAs quantum well at low temperature. At densities lower than the metal-insulator transition one, the temperature dependence of the resistance is either power-like or simply activated. The noise decreases when the temperature or the density increase. These results contradict the standard description of independent particles in the strong localization regime. On the contrary, they agree with the percolation picture suggested by higher density results. The physical nature of the system could be a mixture of a conducting and an insulating phase. We compare our results with those of composite thin films. △ Less

Submitted 15 November, 2005; originally announced November 2005.

Comments: 4 pages, 3 figures; to appear in Physica E (EP2DS-16 proceedings)

1/f Noise In Low Density Two-Dimensional Hole Systems In GaAs

Authors: G. Deville, R. Leturcq, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations we… ▽ More Two-dimensional electron or hole systems in semiconductors offer the unique opportunity to investigate the physics of strongly interacting fermions. We have measured the 1/f resistance noise of two-dimensional hole systems in high mobility GaAs quantum wells, at densities below that of the metal-insulator transition (MIT) at zero magnetic field. Two techniques voltage and current fluctuations were used. The normalized noise power SR/R2 increases strongly when the hole density or the temperature are decreased. The temperature dependence is steeper at the lowest densities. This contradicts the predictions of the modulation approach in the strong localization hopping transport regime. The hypothesis of a second order phase transition or percolation transition at a density below that of the MIT is thus reinforced. △ Less

Submitted 6 October, 2005; originally announced October 2005.

Comments: PDF, 4 pages, 2 figures, in: Proceedings of the 18th International Conference on Noise and Fluctuations (ICNF2005), September 19-23, 2005, Salamanca, Spain

Report number: SPEC-S05/043 [http://www-drecam.cea.fr/spec/articles/S05/043]

Journal ref: AIP Conference Proceedings 780, 139-142 (2005)

Resistance noise scaling in a 2D system in GaAs

Authors: R. Leturcq, G. Deville, D. L'Hote, R. Tourbot, C. J. Mellor, M. Henini

Abstract: The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. V or I fluctuations. The normalized noise magnitude SR/R^2 increases st… ▽ More The 1/f resistance noise of a two-dimensional (2D) hole system in a high mobility GaAs quantum well has been measured on both sides of the 2D metal-insulator transition (MIT) at zero magnetic field (B=0), and deep in the insulating regime. The two measurement methods used are described: I or V fixed, and measurement of resp. V or I fluctuations. The normalized noise magnitude SR/R^2 increases strongly when the hole density is decreased, and its temperature (T) dependence goes from a slight increase with T at the largest densities, to a strong decrease at low density. We find that the noise magnitude scales with the resistance, SR /R^2 ~ R^2.4. Such a scaling is expected for a second order phase transition or a percolation transition. The possible presence of such a transition is investigated by studying the dependence of the conductivity as a function of the density. This dependence is consistent with a critical behavior close to a critical density p* lower than the usual MIT critical density pc. △ Less

Submitted 3 December, 2004; originally announced December 2004.

Comments: 13 pages, 8 figures, Proceedings of SPIE: Fluctuations and noise in materials, D. Popovic, M.B. Weissman, Z.A. Racz Eds., Vol. 5469, pp. 101-113, Mspalomas, Spain, 2004