Interplay of altermagnetism and pressure in hexagonal and orthorhombic MnTe
Authors:
Nayana Devaraj,
Anumita Bose,
Awadhesh Narayan
Abstract:
Alternative magnetic materials or ``altermagnets", characterized by their non-relativistic, momentum-dependent spin-split states, represent a cutting-edge advancement in the field of magnetism, offering promising avenues for spintronic applications. Among these materials, hexagonal MnTe has emerged as a standout material candidate for its substantial spin-splitting. In this study, employing first-…
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Alternative magnetic materials or ``altermagnets", characterized by their non-relativistic, momentum-dependent spin-split states, represent a cutting-edge advancement in the field of magnetism, offering promising avenues for spintronic applications. Among these materials, hexagonal MnTe has emerged as a standout material candidate for its substantial spin-splitting. In this study, employing first-principles electronic structure calculations and spin group symmetry analysis, we delve into the interplay of altermagnetism and pressure in two main phases of MnTe. Our relativistic calculations demonstrate the presence of tunable anomalous Hall effect (AHE) in hexagonal MnTe. In addition, our results underscore the pivotal role of pressure as a tuning parameter for the alternative magnetic traits in the system. Furthermore, we identify another phase of MnTe with orthorhombic structure, namely $γ$-MnTe, hosting altermagnetic characteristics. We study, in detail, its response in AHE and spin-spliting due to magnetization and pressure variations, respectively. Our study highlights the substantial impact of pressure on the properties of alternative magnetic materials, particularly emphasizing the pronounced tuning effect observed in the hexagonal and orthorhombic MnTe.
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Submitted 3 December, 2024; v1 submitted 15 July, 2024;
originally announced July 2024.
Theoretical investigation of quantum capacitance in the functionalized MoS$_2$-monolayer
Authors:
Sruthi T,
Nayana Devaraj,
Kartick Tarafder
Abstract:
In this work, we investigated the electronic structure and the quantum capacitance of the functionalized MoS$_2$ monolayer. The functionalizations have been done by using different ad-atom adsorption on Mo$S_2$ monolayer. Density functional theory calculations are performed to obtain an accurate electronic structure of ad-atom doped MoS$_2$ monolayer with a varying degree of doping concentration.…
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In this work, we investigated the electronic structure and the quantum capacitance of the functionalized MoS$_2$ monolayer. The functionalizations have been done by using different ad-atom adsorption on Mo$S_2$ monolayer. Density functional theory calculations are performed to obtain an accurate electronic structure of ad-atom doped MoS$_2$ monolayer with a varying degree of doping concentration. The quantum capacitance of the systems was subsequently estimated. A marked quantum capacitance above 200 $μ$F/cm$^2$ has been observed. Our calculations show that the quantum capacitance of MoS$_2$ monolayer is significantly enhanced with substitutional doping of Mo with transition metal ad-atoms. The microscopic origin of such enhancement in quantum capacitance in this system has been analyzed. Our DFT-based calculation shows that generation of new electronic states at the proximity of the band-edge and the shift of Fermi level caused by the ad-atom adsorption results in a very high quantum capacitance in the system.
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Submitted 24 November, 2020; v1 submitted 23 November, 2020;
originally announced November 2020.
