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Two superconducting thin films systems with potential integration of different quantum functionalities
Authors:
Snehal Mandal,
Biplab Biswas,
Suvankar Purakait,
Anupam Roy,
Biswarup Satpati,
Indranil Das,
B. N. Dev
Abstract:
Quantum computation based on superconducting circuits utilizes superconducting qubits with Josephson tunnel junctions. Engineering high-coherence qubits requires materials optimization. In this work, we present two superconducting thin film systems, grown on silicon (Si), and one obtained from the other via annealing. Cobalt (Co) thin films grown on Si were found to be superconducting [EPL 131 (20…
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Quantum computation based on superconducting circuits utilizes superconducting qubits with Josephson tunnel junctions. Engineering high-coherence qubits requires materials optimization. In this work, we present two superconducting thin film systems, grown on silicon (Si), and one obtained from the other via annealing. Cobalt (Co) thin films grown on Si were found to be superconducting [EPL 131 (2020) 47001]. These films also happen to be a self-organised hybrid superconductor/ferromagnet/superconductor (S/F/S) structure. The S/F/S hybrids are important for superconducting $π$-qubits [PRL 95 (2005) 097001] and in quantum information processing. Here we present our results on the superconductivity of a hybrid Co film followed by the superconductivity of a CoSi$_2$ film, which was prepared by annealing the Co film. CoSi$_2$, with its $1/f$ noise about three orders of magnitude smaller compared to the most commonly used superconductor aluminium (Al), is a promising material for high-coherence qubits. The hybrid Co film revealed superconducting transition temperature $T_c$ = 5 K and anisotropy in the upper critical field between the in-plane and out-of-plane directions. The anisotropy was of the order of ratio of lateral dimensions to thickness of the superconducting Co grains, suggesting a quasi-2D nature of superconductivity. On the other hand, CoSi$_2$ film showed a $T_c$ of 900 mK. In the resistivity vs. temperature curve, we observe a peak near $T_c$. Magnetic field scan as a function of $T$ shows a monotonic increase in intensity of this peak with temperature. The origin of the peak has been explained in terms of parallel resistive model for the particular measurement configuration. Although our CoSi$_2$ film contains grain boundaries, we observed a perpendicular critical field of 15 mT and a critical current density of 3.8x10$^7$ A/m$^2$, comparable with epitaxial CoSi$_2$ films.
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Submitted 27 December, 2024;
originally announced December 2024.
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Effect of UHV annealing on morphology and roughness of sputtered $Si(111)-(7\times7)$ surfaces
Authors:
Jagadish Chandra Mahato,
Anupam Roy,
Rajib Batabyal,
Debolina Das,
Rahul Gorain,
Tuya Dey,
B. N. Dev
Abstract:
$Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(1…
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$Ar^+$ ion has been used regularly for the cleaning of semiconductor, metal surfaces for epitaxial nanostructures growth. We have investigated the effect of low-energy $Ar^+$ ion sputtering and subsequent annealing on the $Si(111)-(7\times7)$ surfaces under ultrahigh vacuum (UHV) condition. Using $in-situ$ scanning tunnelling microscopy (STM) we have compared the morphological changes to the $Si(111)-(7\times7)$ surfaces before and after the sputtering process. Following $500~eV Ar^+$ ion sputtering, the atomically flat $Si(111)-(7\times7)$ surface becomes amorphous. The average root mean square (rms) surface roughness $(σ_{avg})$ of the sputtered surface and that following post-annealing at different temperatures $(500^\circ-700^\circ)C$ under UHV have been measured as a function of STM scan size. While, annealing at $\sim 500^\circ C$ shows no detectable changes in the surface morphology, recrystallization process starts at $\sim 600^\circ C$. For the sputtered samples annealed at temperatures $\geq 600^\circ C, \,log~σ_{avg}$ varies linearly at lower length scales and approaches a saturation value of $\sim 0.6 nm$ for the higher length scales confirming the self-affine fractal nature. The correlation length increases with annealing temperature indicating gradual improvement in crystallinity. For the present experimental conditions, $650^\circ C$ is the optimal annealing temperature for recrystallization. The results offer a method to engineer the crystallinity of sputtered surface during nanofabrication process.
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Submitted 16 December, 2024;
originally announced December 2024.
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Tensile Strain Induced Anomalous Enhancement in the Lattice Thermal Transport of Monolayer ZnO: A First Principles Study
Authors:
Saumen Chaudhuri,
Amrita Bhattacharya,
A. K. Das,
G. P. Das,
B. N. Dev
Abstract:
Density functional theory based calculations have been performed for solving the phonon Boltzmann transport equation to investigate the thermal transport properties of monolayer (ML) ZnO under in-plane isotropic biaxial tensile strain. The in-plane lattice thermal conductivity ($κ_{\text{L}}$) of ML-ZnO increases dramatically in response to the biaxial tensile strain ranging from 0% to 10%, confli…
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Density functional theory based calculations have been performed for solving the phonon Boltzmann transport equation to investigate the thermal transport properties of monolayer (ML) ZnO under in-plane isotropic biaxial tensile strain. The in-plane lattice thermal conductivity ($κ_{\text{L}}$) of ML-ZnO increases dramatically in response to the biaxial tensile strain ranging from 0% to 10%, conflicting with the general belief. The strain-induced stiffening of the ZA phonon mode and the resulting concomitant increase in group velocity and decrease in phonon population is found to play a significant role behind the unusual enhancement of $κ_{\text{L}}$. The mode resolved analysis shows the tensile strain driven competitive behavior between different phonon properties, mainly the group velocity and phonon lifetimes, being responsible for the observed unusual enhancement in $κ_{\text{L}}$. Additionally, the phonon scattering calculations show the importance of inclusion of 4-phonon scattering in the thermal transport calculations suggesting the significance of higher-order anharmonicity in ML-ZnO. A strikingly high 4-phonon scattering strength in ML-ZnO primarily results from the strong anharmonicity, quadratic ZA mode dispersion, large frequency gap in phonon dispersion, and reflection symmetry induced selection rule. The incorporation of 4-phonon scattering significantly alters the transport characteristics of all the phonon modes, in general and ZA phonons, in particular. At large strains, a linear dispersion of the ZA mode and closure of the frequency gap is observed, which results in a significant reduction of 4-phonon scattering strength in ML-ZnO.
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Submitted 13 December, 2023;
originally announced December 2023.
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Understanding the Role of Four-Phonon Scattering in the Lattice Thermal Transport of Monolayer MoS$_{2}$
Authors:
Saumen Chaudhuri,
Amrita Bhattacharya,
A. K. Das,
G. P. Das,
B. N. Dev
Abstract:
In the calculations of lattice thermal conductivity ($κ_{\text{L}}$), vital contributions stemming from four-phonon scattering are often neglected. The significance of four-phonon scattering in the thermal transport properties of monolayer (ML) MoS$_{2}$ has been unraveled using first-principles calculations combined with the Boltzmann transport equation. If only three-phonon scattering processes…
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In the calculations of lattice thermal conductivity ($κ_{\text{L}}$), vital contributions stemming from four-phonon scattering are often neglected. The significance of four-phonon scattering in the thermal transport properties of monolayer (ML) MoS$_{2}$ has been unraveled using first-principles calculations combined with the Boltzmann transport equation. If only three-phonon scattering processes are considered then the $κ_{\text{L}}$ is found to be significantly overestimated ($\sim$ 115.8 Wm$^{-1}$K$^{-1}$ at 300 K). With the incorporation of the four-phonon scattering processes, the $κ_{\text{L}}$ reduces to 24.6 Wm$^{-1}$K$^{-1}$, which is found to be closer to the experimentally measured $κ_{\text{L}}$ of 34.5 Wm$^{-1}$K$^{-1}$. Four-phonon scattering significantly impacts the carrier lifetime ($τ$) of the low-energy out-of-plane acoustic mode (ZA) phonons and thereby, suppresses its contribution in $κ_{\text{L}}$ from 64% (for three-phonon scattering) to 16% (for both three- and four-phonon scatterings). The unusually high four-phonon scattering rate ($τ_{4}^{-1}$) of the ZA phonons is found to result from the simultaneous effect of the acoustic-optical frequency gap, strong anharmonicity, and the reflection symmetry imposed selection rule. The strong coupling between the quadratic dispersion of the ZA mode and the $τ_{4}^{-1}$ is discovered by the application of mechanical strain. The strain induced increase in the linearity of the ZA mode dispersion dramatically reduces the significance of the four-phonon scattering in the strained ML-MoS$_{2}$, both qualitatively and quantitatively. These conclusions will provide significant insights into the thermal transport phenomena in ML-MoS$_{2}$, as well as any other 2D material.
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Submitted 13 December, 2023;
originally announced December 2023.
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Hydrostatic Pressure Induced Anomalous Enhancement in the Thermoelectric Performance of Monolayer MoS$_{2}$
Authors:
Saumen Chaudhuri,
Amrita Bhattacharya,
A. K. Das,
G. P. Das,
B. N. Dev
Abstract:
The hydrostatic pressure induced changes in the transport properties of monolayer (ML) MoS$_2$ have been investigated using first-principles density functional theory based calculations. The application of pressure induces shift in the conduction band minimum (CBM) from K to $Λ$, while retaining the band extrema at K in around the same energy at a pressure of 10 GPa. This increase in valley degene…
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The hydrostatic pressure induced changes in the transport properties of monolayer (ML) MoS$_2$ have been investigated using first-principles density functional theory based calculations. The application of pressure induces shift in the conduction band minimum (CBM) from K to $Λ$, while retaining the band extrema at K in around the same energy at a pressure of 10 GPa. This increase in valley degeneracy is found to have a significant impact on the electronic transport properties of ML-MoS$_2$ via enhancement of the thermopower (S) by up to 140\% and power factor (S$^{2}$$σ$/$τ$) by up to 310\% at 300 K. Besides, the very low deformation potential (E$_\text{DP}$) associated with the CB-$Λ$ valley results in a remarkably high electronic mobility ($μ$) and relaxation time ($τ$). Additionally, the application of pressure reduces the room temperature lattice thermal conductivity ($κ_\text{L}$) by 20\% of its unstrained value, owing to the increased anharmonicity and resulting increase in the intrinsic phonon scattering rates. The hydrostatic pressure induced increase in power factor (S$^{2}$$σ$) and the decrease in $κ_\text{L}$ act in unison to result in a substantial improvement in the overall thermoelectric performance (zT) of ML-MoS$_2$. At 900 K with an external pressure of 25 GPa, zT values of 1.63 and 1.21 are obtained for electron and hole doping, respectively, which are significantly higher compared to the zT values at zero pressure. For the implementation in a thermoelectric module where both n-type and p-type legs should be preferably made of the same material, the concomitant increase in zT of ML-MoS$_2$ for both types of doping with hydrostatic pressure can be highly beneficial.
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Submitted 1 August, 2023;
originally announced August 2023.
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Ab-initio Study of Electronic and Lattice Dynamical Properties of monolayer ZnO under Strain
Authors:
Saumen Chaudhuri,
A. K. Das,
G. P. Das,
B. N. Dev
Abstract:
First-principles density functional theory based calculations have been performed to investigate the strain-induced modifications in the electronic and vibrational properties of monolayer (ML) ZnO. Wide range of in-plane tensile and compressive strains along different directions are applied to analyse the modifications in detail. The electronic band gap reduces under both tensile and compressive s…
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First-principles density functional theory based calculations have been performed to investigate the strain-induced modifications in the electronic and vibrational properties of monolayer (ML) ZnO. Wide range of in-plane tensile and compressive strains along different directions are applied to analyse the modifications in detail. The electronic band gap reduces under both tensile and compressive strains and a direct to indirect band gap transition occurs for high values of biaxial tensile strain. The relatively low rate of decrease of band gap and large required strain for direct to indirect band gap transition compared to other $2$D materials are analysed. Systematic decrease in the frequency of the in-plane and increase in the out-of-plane optical phonon modes with increasing tensile strain are observed. The in-plane acoustic modes show linear dispersion for unstrained as well as strained cases. However, the out-of-plane acoustic mode (ZA), which shows quadratic dispersion in the unstrained condition, turns linear with strain. The dispersion of the ZA mode is analysed using the shell elasticity theory and the possibility of ripple formation with strain is analysed. The strain-induced linearity of the ZA mode indicates the absence of rippling under strain. Finally, the stability limit of ML-ZnO is investigated and found that for $18\%$ biaxial tensile strain the structure shows instability with the emergence of imaginary phonon modes. Furthermore, the potential of ML-ZnO to be a good thermoelectric material is analyzed in an intuitive way based on the calculated electronic and phononic properties. Our results, thus, not only highlight the significance of strain-engineering in tailoring the electronic and vibrational properties but also provide a thorough understanding of the lattice dynamics and mechanical strength of ML-ZnO.
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Submitted 1 August, 2023;
originally announced August 2023.
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Strain Driven Anomalous Anisotropic Enhancement in the Thermoelectric Performance of monolayer MoS$_{2}$
Authors:
Saumen Chaudhuri,
Amrita Bhattacharya,
A. K. Das,
G. P. Das,
B. N. Dev
Abstract:
First principles density functional theory based calculations have been performed to investigate the strain and temperature induced tunability of the thermoelectric properties of monolayer (ML) MoS$_2$. Modifications in the electronic and phononic transport properties, under two anisotropic uniaxial strains along the armchair (AC) and zigzag (ZZ) directions, have been explored in detail. Consideri…
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First principles density functional theory based calculations have been performed to investigate the strain and temperature induced tunability of the thermoelectric properties of monolayer (ML) MoS$_2$. Modifications in the electronic and phononic transport properties, under two anisotropic uniaxial strains along the armchair (AC) and zigzag (ZZ) directions, have been explored in detail. Considering the intrinsic carrier-phonon scattering, we found that the charge carrier mobility ($μ$) and relaxation time ($τ$) increase remarkably for strains along the ZZ direction. Concomitantly, strain along the ZZ direction significantly reduces the lattice thermal conductivity ($κ_\text{L}$) of ML-MoS$_2$. The combined effect of shortened phonon relaxation time and group velocity, and the reduced Debye temperature is found to be the driving force behind the lowering of $κ_\text{L}$. The large reduction in $κ_\text{L}$ and increase in $τ$, associated with the strains along the ZZ direction, act in unison to result in enhanced efficiency and hence, improved thermoelectric performance. Nearly $150\%$ enhancement in the thermoelectric efficiency can be achieved with the optimal doping concentration. We, therefore, highlight the significance of in-plane tensile strains, in general, and strains along the ZZ direction, in particular, in improving the thermoelectric performance of ML-MoS$_2$.
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Submitted 1 August, 2023; v1 submitted 24 March, 2022;
originally announced March 2022.
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Strain induced effects on the electronic and phononic properties of 2H and 1T$^{\prime}$ monolayer MoS$_{2}$
Authors:
Saumen Chaudhuri,
A. K. Das,
G. P. Das,
B. N. Dev
Abstract:
First-principles calculations, within the framework of density functional theory, have been performed on the well-studied 2H and the less explored 1T$^{\prime}$ phase of single-layer MoS$_{2}$. We have addressed the strain-induced tunability of the electronic and phononic properties of both phases, and compared their stability against the applied strain. By considering a large number of strain pro…
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First-principles calculations, within the framework of density functional theory, have been performed on the well-studied 2H and the less explored 1T$^{\prime}$ phase of single-layer MoS$_{2}$. We have addressed the strain-induced tunability of the electronic and phononic properties of both phases, and compared their stability against the applied strain. By considering a large number of strain profiles for both tensile and compressive stress, we have found that the electronic properties of both 2H and 1T$^{\prime}$ phases are sensitive to the direction of the applied strain and can be tuned in a controlled way. For the 2H phase, in most cases, a direct to indirect band gap transition at lower strain and a semiconductor to metal transition at higher strain is observed. The applied strain destroys the semimetallic nature of the 1T$^{\prime}$ phase via the overlapping of the bulk states with the topologically protected edge states. Significant strain-induced changes in the phononic properties, in the frequency of the phonon branches, as well as in the nature of the dispersion curves, are observed. A systematic change in the frequency of the optical phonon modes at the zone centre is seen for both phases. With increasing strain, the out-of-plane acoustic mode (ZA) turns imaginary, indicating a possibility of phase transition or instability of the crystal structure. The 2H phase appears to withstand a larger amount of strain and therefore possesses better stability compared to the 1T$^{\prime}$ phase since the imaginary branch starts to appear at much lower values of strain in the latter case. We highlight the significance of strain engineering in tuning the electronic and phononic properties and the safe limit of the strain application in different polymorphs of single-layer MoS$_{2}$.
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Submitted 6 January, 2022;
originally announced January 2022.
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Superconductivity of Cobalt in Thin Films
Authors:
Nasrin Banu,
M. Aslam,
Arpita Paul,
Sanjib Banik,
S. Das,
S. Datta,
A. Roy,
I. Das,
G. Sheet,
U. V. Waghmare,
B. N. Dev
Abstract:
Due to competing long range ferromagnetic order, the transition metals Fe, Co and Ni are not superconductors at ambient pressure. While superconductivity was observed in a non-magnetic phase of Fe, stabilized under pressure, it is yet to be discovered in Co and Ni under any experimental conditions. Here, we report emergence of superconductivity in the recently discovered high-density nonmagnetic f…
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Due to competing long range ferromagnetic order, the transition metals Fe, Co and Ni are not superconductors at ambient pressure. While superconductivity was observed in a non-magnetic phase of Fe, stabilized under pressure, it is yet to be discovered in Co and Ni under any experimental conditions. Here, we report emergence of superconductivity in the recently discovered high-density nonmagnetic face centered cubic phase in Co thin films below a transition temperature (Tc) of ~5.4 K, as revealed in experiments based on point-contact spectroscopy and resistance, and four-probe measurements of resistance at ambient pressure. We confirm the non-magnetic nature of the dense fcc phase of Co within first-principles density functional theory, and show that its superconductivity below 5 K originates from anomalous softening of zone-boundary phonons and their enhanced coupling with electrons upon biaxial strain.
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Submitted 17 October, 2017;
originally announced October 2017.
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High density nonmagnetic cobalt in thin films
Authors:
Nasrin Banu,
Surendra Singh,
Saibal Basu,
Anupam Roy,
Hema C. P. Movva,
B. N. Dev
Abstract:
Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam deposition chamber and exposed to air. Thin HD NM cobalt layers were found near the cobalt/silicon and the cobalt-oxide/cobalt interfaces, while the thicker mid-d…
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Recently high density (HD) nonmagnetic (NM) cobalt has been discovered in a cobalt thin film, grown on Si(111). This cobalt film had a natural cobalt oxide at the top. The oxide layer forms when the film is taken out of the electron-beam deposition chamber and exposed to air. Thin HD NM cobalt layers were found near the cobalt/silicon and the cobalt-oxide/cobalt interfaces, while the thicker mid-depth region of the film was hcp cobalt with normal density and normal magnetic moment. If an ultrathin film of gold is grown on the cobalt layer, before exposing it to air, the oxidation of the cobalt surface layer is prevented. It is important to investigate whether the growth of HD NM cobalt layers in the thin film depends on (i) capping of the film by the gold layer, (ii) the film thickness and (iii) the nature of the substrate. The results of such investigations, presented here, indicates that for cobalt films capped with a thin gold layer, and for various film thicknesses, HD NM cobalt layers are still observed. However, instead of a Si substrate, when the cobalt films are grown on oxide substrates, such as silicon oxide or cobalt oxide, HD NM cobalt layers are not observed.
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Submitted 13 March, 2017;
originally announced March 2017.
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Nanoscale η-NiSi formation via ion irradiation of Si/Ni/Si
Authors:
Nasrin Banu,
Biswarup Satpati,
Anjan Bhukta,
B. N. Dev
Abstract:
Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions.…
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Nickel monosilicide (NiSi) has emerged as an excellent material of choice for source-drain contact applications below 45 nm node complementary metal-oxide-semiconductor (CMOS) technology. We have investigated the formation of nanoscale NiSi by ion irradiation of Si (~5 nm)/Ni(~15 nm)/Si, grown under ultrahigh vacuum environment. Irradiation was carried out at room temperature with 1 MeV Si+ ions. X-ray diffraction (XRD) and transmission electron microscopy (TEM) were employed for analysis. With increasing ion fluence ion beam mixing occurs and more and more Si is incorporated into the Ni layer and this layer gets amorphized. At an even higher fluence a recrystallized uniform nickel monosilicide (η-NiSi) layer is formed. Several planar spacings of different Miller indices of η-NiSi have been observed in XRD and TEM. Additionally, an oscillatory amorphization and recrystallization has been observed in the substrate Si with increasing ion fluence. To our knowledge, this has never been observed in ion irradiation of bare Si in decades of work in this area. The oscillatory amorphization/recrystallization in Si is apparently Ni-induced. Irradiation displaces Ni and produces a distribution of Ni in amorphized Si. Irradiation at a higher fluence produces two recrystallized Si bands in amorphous Si with concomitant accumulation of Ni at the amorphous/crystalline interfaces. On further increase of irradiation fluence the recrystallized Si bands again pass through amorphization and recrystallization. The total thickness of recrystallized as well as amorphous Si shows an oscillatory behavior as a function of ion fluence.
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Submitted 26 December, 2016;
originally announced December 2016.
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Evidence of Formation of Superdense Nonmagnetic Cobalt
Authors:
Nasrin Banu,
Surendra Singh,
B. Satpati,
A. Roy,
S. Basu,
P. Chakraborty,
Hema C. P. Movva,
V. Lauter,
B. N. Dev
Abstract:
Magnetism of 3d transition metals at high density has always received wide interest due to existence of magnetism at the core of the Earth. For ferromagnetic cobalt, although there is a theoretical prediction that its magnetic moment would vanish when the density increases to about 1.4 times the normal value, so far there is no experimental evidence. We have discovered the existence of ultrathin s…
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Magnetism of 3d transition metals at high density has always received wide interest due to existence of magnetism at the core of the Earth. For ferromagnetic cobalt, although there is a theoretical prediction that its magnetic moment would vanish when the density increases to about 1.4 times the normal value, so far there is no experimental evidence. We have discovered the existence of ultrathin superdense nonmagnetic cobalt layers in a polycrystalline cobalt thin film. The densities of these layers are about 1.3-1.4 times the normal density of Co. This has been revealed by X-ray reflectometry experiments, which provide a depth profile of the electron scattering length density, and corroborated by polarized neutron reflectometry (PNR) experiments. The superdense Co layer has an fcc structure, unlike hcp structure for bulk Co, as revealed by transmission electron microscopy. The magnetic depth profile, obtained by PNR, shows that the superdense Co layers at the film-substrate interface and near the top of the film are nonmagnetic. The major part of the Co film has the usual density and magnetic moment.
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Submitted 18 February, 2016;
originally announced February 2016.
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Ion irradiation effects on a magnetic Si/Ni/Si trilayer and lateral magnetic-nonmagnetic multistrip patterning by focused ion beam
Authors:
B. N. Dev,
N. Banu,
J. Fassbender,
J. Grenzer,
N. Schell,
L. Bischoff,
R. Groetzschel,
J. McCord
Abstract:
Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr ef…
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Fabrication of a multistrip magnetic/nonmagnetic structure in a thin sandwiched Ni layer [Si(5 nm)/Ni(10 nm)/Si] by a focused ion beam (FIB) irradiation has been attempted. A control experiment was initially performed by irradiation with a standard 30 keV Ga ion beam at various fluences. Analyses were carried out by Rutherford backscattering spectrometry, X-ray reflectivity, magnetooptical Kerr effect (MOKE) measurements and MOKE microscopy. With increasing ion fluence, the coercivity as well as Kerr rotation decreases. A threshold ion fluence has been identified, where ferromagnetism of the Ni layer is lost at room temperature and due to Si incorporation into the Ni layer, a Ni0.68Si0.32 alloy layer is formed. This fluence was used in FIB irradiation of parallel 50 nm wide stripes, leaving 1 micrometer wide unirradiated stripes in between. MOKE microscopy on this FIB-patterned sample has revealed interacting magnetic domains across several stripes. Considering shape anisotropy effects, which would favor an alignment of magnetization parallel to the stripe axis, the opposite behavior is observed. Magneto-elastic effects introducing a stress-induced anisotropy component oriented perpendicular to the stripe axis are the most plausible explanation for the observed behavior.
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Submitted 14 July, 2015;
originally announced July 2015.
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Evolution of Fermi Level State Density in Ultrathin Films Near the Two Dimensional Limit: Experiment and Theory
Authors:
R. Batabyal,
A. H. M. Abdul Wasey,
J. C. Mahato,
Debolina Das,
G. P. Das,
B. N. Dev
Abstract:
Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theo…
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Electronic density of states (DOS) at Fermi level has been investigated in ultrathin Ag films grown on Si(111)-(7x7) down to the two dimensional limit of a single atomic layer. Measurement of DOS at Fermi level by scanning tunneling spectroscopy shows an approximate (1 - γ/d) dependence, where γ is a constant and d is the film thickness. The results are explained in the light of an analytical theory as well as our density functional theory (DFT) calculations. DFT results also show that in the proximity of the interface the DOS values of the film and the substrate are mutually affected by each other.
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Submitted 3 December, 2014;
originally announced December 2014.
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Crossover regimes in lower dimensional structures
Authors:
R. Batabyal,
B. N. Dev
Abstract:
Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of stat…
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Modern growth and fabrication techniques can produce lower dimensional structures in the crossover regime. Such structures in the crossover regime can provide tunability of various properties. For example, a zero-dimensional (0-D) structure evolving towards a 2-D structure shows electronic structure which is neither 0-D-like, nor 2-D-like. Within the crossover regime the electronic density of states (DOS) at Fermi level (Ef) keeps on changing as the size of the system changes. DOS at Ef determines many properties of materials, such as electronic specific heat, spin susceptibility etc. Keeping the importance of DOS at Ef in mind, we determine their values and other details of electronic structure of lower dimensional structures of metals, in the 0-D to 1-D, 1-D to 2-D, 2-D to 3-D, 0-D to 2-D, 0-D to 3-Dand 1-D to 3-Dcrossover regimes, in a simple free electron model. We compare our results with analytical theory and experimental results, wherever available. We also present some results obtained by scanning tunneling spectroscopy measurements on Ag islands on Si(111) evolving from a 0-D to a 2-D structure. This simple model is quite useful in understanding lower dimensional structures in the crossover regimes.
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Submitted 2 August, 2013;
originally announced August 2013.
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The effect of exclusion on nonlinear reaction diffusion system in inhomogeneous media
Authors:
Trilochan Bagarti,
Anupam Roy,
K. Kundu,
B. N. Dev
Abstract:
We study a minimal model to understand the formation of clusters on surfaces in the presence of surface defects. We consider reaction diffusion model in which atoms undergoes reactions at the defect centers to form clusters. Volume exclusion between particles is introduced through a drift term in the reaction diffusion equation that arises due the repulsive force field produced by the clustering a…
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We study a minimal model to understand the formation of clusters on surfaces in the presence of surface defects. We consider reaction diffusion model in which atoms undergoes reactions at the defect centers to form clusters. Volume exclusion between particles is introduced through a drift term in the reaction diffusion equation that arises due the repulsive force field produced by the clustering atoms. The volume exclusion terms can be derived from master equation with a concentration dependent hopping rate. Perturbative analysis is performed for both cross-exclusion and self-exclusion one dimensional system. For two dimension numerical analysis is performed. We have found that the clusterization process slows down due to exclusion. As a result the size of the clusters reduces. In this model reaction scheme has algebraic nonlinearity and plausible mechanism is also given.
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Submitted 23 November, 2012;
originally announced November 2012.
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Nanodot to Nanowire: A strain-driven shape transition in self-organized endotaxial CoSi2 on Si (100)
Authors:
J. C. Mahato,
Debolina Das,
R. R. Juluri,
R. Batabyal,
Anupam Roy,
P. V. Satyam,
B. N. Dev
Abstract:
We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this cr…
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We report a phenomenon of strain-driven shape transition in the growth of nanoscale self-organized endotaxial CoSi2 islands on Si (100) substrates. Small square shaped islands as small as 15\times15 nm2 have been observed. Islands grow in the square shape following the four fold symmetry of the Si (100) substrate, up to a critical size of 67 \times 67 nm2. A shape transition takes place at this critical size. Larger islands adopt a rectangular shape with ever increasing length and the width decreasing to an asymptotic value of ~25 nm. This produces long wires of nearly constant width.We have observed nanowire islands with aspect ratios as large as ~ 20:1. The long nanowire heterostructures grow partly above (~ 3 nm) the surface, but mostly into (~17 nm) the Si substrate. These self-organized nanostructures behave as nanoscale Schottky diodes. They may be useful in Si-nanofabrication and find potential application in constructing nano devices.
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Submitted 4 May, 2012;
originally announced May 2012.
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Growth of narrow-neck, epitaxial and nearly spherical Ge nanoislands on air-exposed Si(111)-(7$\times$7) surfaces
Authors:
K. Bhattacharjee,
A. Roy,
S. Roy,
J. Ghatak,
S. Mathew,
P. V. Satyam,
B. N. Dev
Abstract:
Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. ST…
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Growth of narrow-neck, epitaxial as well as non-epitaxial and nearly spherical Ge islands on air-exposed Si(111)-(7\times7) surfaces has been investigated by in-situ scanning tunnelling microscopy (STM) and ex-situ high resolution cross-sectional transmission electron microscopy (HRXTEM). A thin oxide is formed on Si(111)-(7\times7) surfaces via air exposure. Ge islands are grown on this oxide. STM measurements reveal the growth of very small (~2 nm diameter) Ge islands with a high number density of about 1.8\times10^12 cm-2. The island size has been found to depend on the amount of deposited Ge as well as the substrate temperature during Ge deposition. HRXTEM micrographs reveal that the islands are nearly spherical in shape, making narrow-neck contact with the substrate surface. At 520°C growth temperature both epitaxial and non-epitaxial islands grow. However, at 550°C, Ge islands predominantly grow epitaxially by a narrow-contact with Si via voids in the oxide layer. Growth of vertically elongated Ge islands is also observed in HRXTEM measurements with a very small diameter-to-height aspect ratio (~0.5-1), a hitherto unreported feature of epitaxial Ge growth on Si surfaces. In addition, stacking fault and faceting are observed in islands as small as 5 nm diameter. Ge islands, not even in contact with the Si substrate, appear to be in epitaxial alignment with the Si substrate. The island size distribution is essentially monomodal. As the contact area of Ge islands with Si through the voids in the oxide layer can be controlled via growth temperature, the results indicate that tunability of the potential barrier at the interface and consequently the tunability of electronic levels and optical properties can be achieved by the control of growth temperature.
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Submitted 19 October, 2011;
originally announced October 2011.
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Growth of epitaxially oriented Ag nanoislands on air-oxidized Si(111)-(7x7) surfaces: Influence of short range order on the substrate
Authors:
Anupam Roy,
K. Bhattacharjee,
J. Ghatak,
B. N. Dev
Abstract:
Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7x7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(111)-(7x7) surface shows that only the 1/7th order spots are…
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Clean Si(111)-(7{x7) surfaces, followed by air-exposure, have been investigated by reflection high energy electron diffraction (RHEED) and scanning tunneling microscopy (STM). Fourier transforms (FTs) of STM images show the presence of short range (7x7) order on the air-oxidized surface. Comparison with FTs of STM images from a clean Si(111)-(7x7) surface shows that only the 1/7th order spots are present on the air-oxidized surface. The oxide layer is ~ 2-3 nm thick, as revealed by cross-sectional transmission electron microscopy (XTEM). Growth of Ag islands on these air-oxidized Si(111)-(7x7) surfaces has been investigated by in-situ RHEED and STM and ex-situ XTEM and scanning electron microscopy. Ag deposition at room temperature leads to the growth of randomly oriented Ag islands while preferred orientation evolves when Ag is deposited at higher substrate temperatures. For deposition at 550°C face centered cubic Ag nanoislands grow with a predominant epitaxial orientation [1 -1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si along with its twin [-1 1 0]Ag || [1 -1 0]Si, (111)Ag || (111)Si, as observed for epitaxial growth of Ag on Si(111) surfaces. The twins are thus rotated by a 180° rotation of the Ag unit cell about the Si [111] axis. It is intriguing that Ag nanoislands follow an epitaxial relationship with the Si(111) substrate in spite of the presence of a 2-3 nm thick oxide layer between Ag and Si. Apparently the short range order on the oxide surface influences the crystallographic orientation of the Ag nanoislands.
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Submitted 14 September, 2010;
originally announced September 2010.
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Size distribution of sputtered particles from Au nanoislands due to MeV self-ion bombardment
Authors:
B. Satpati,
J. Ghatak,
P. V. Satyam,
B. N. Dev
Abstract:
Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the surface normal. The sputtered particles were collected on carbon coated grids (catcher grid) during ion irradiation and were analyzed with transmission…
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Nanoisland gold films, deposited by vacuum evaporation of gold onto Si(100) substrates, were irradiated with 1.5 MeV Au$^{2+}$ ions up to a fluence of $5\times 10^{14}$ ions cm$^{-2}$ and at incidence angles up to $60^{\circ}$ with respect to the surface normal. The sputtered particles were collected on carbon coated grids (catcher grid) during ion irradiation and were analyzed with transmission electron microscopy and Rutherford backscattering spectrometry. The average sputtered particle size and the areal coverage are determined from transmission electron microscopy measurements, whereas the amount of gold on the substrate is found by Rutherford backscattering spectrometry. The size distributions of larger particles (number of atoms/particle, $n$ $\ge$ 1,000) show an inverse power-law with an exponent of $\sim$ -1 in broad agreement with a molecular dynamics simulation of ion impact on cluster targets.
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Submitted 17 March, 2005;
originally announced March 2005.
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Magnetism in C60 Films Induced by Proton Irradiation
Authors:
S. Mathew,
B. Satpati,
B. Joseph,
B. N. Dev,
R. Nirmala,
S. K. Malik
Abstract:
It is shown that polycrystalline fullerene thin films on hydrogen passivated Si(111) substrates irradiated by 2 MeV protons displays ferromagnetic-like behavior at 5 K. At 300 K both the pristine and the irradiated film show diamagnetic behavior. Magnetization data in the temperature range 2 - 300 K, in 1 Tesla applied field, for the irradiated film shows much stronger temperature dependence com…
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It is shown that polycrystalline fullerene thin films on hydrogen passivated Si(111) substrates irradiated by 2 MeV protons displays ferromagnetic-like behavior at 5 K. At 300 K both the pristine and the irradiated film show diamagnetic behavior. Magnetization data in the temperature range 2 - 300 K, in 1 Tesla applied field, for the irradiated film shows much stronger temperature dependence compared to the pristine film. Possible origin of ferromagnetic-like signals in the irradiated films are discussed.
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Submitted 22 March, 2005; v1 submitted 13 March, 2005;
originally announced March 2005.
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Ion Irradiation Induced Effects in Metal Nanostructures
Authors:
B. Satpati,
P. V. Satyam,
T. Som,
B. N. Dev
Abstract:
High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films (~2 nm) are prepared by thermal evaporation under high vacuum condition at room temperature (RT). These films were irradiated with MeV Au ions also at RT. Very…
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High resolution transmission electron microscopy (HRTEM) and Rutherford backscattering spectrometry (RBS) are used to study the ion induced effects in Au, Ag nanostructures grown on Si and thermally grown SiO2 substrates. Au and Ag films (~2 nm) are prepared by thermal evaporation under high vacuum condition at room temperature (RT). These films were irradiated with MeV Au ions also at RT. Very thin films of Au and Ag deposited on silicon substrates (with native oxide) form isolated nano-island structures due to the non-wetting nature of Au and Ag. Ion irradiation causes embedding of these nanoislands into the substrate. For Ag nanoislands with diameter 15 - 45 nm, the depth of the embedding increases with ion fluence and the nano particles are fully submerged into Si and SiO$_2$ substrate at a fluence of 5*10^14 ions /cm^2 without any mixing. Au nanoparticles (diameter 6 - 20 nm), upon ion irradiation, forms embedded gold-silicide in the case of Si substrate and show lack of mixing and silicide formation in the case of SiO2 substrate system.
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Submitted 1 March, 2005;
originally announced March 2005.
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Energy dependent sputtering of nano-clusters from a nanodisperse target and embedding of nanoparticles into a substrate
Authors:
B. Satpati,
J. Ghatak,
B. Joseph,
P. V. Satyam,
T. Som,
D. Kabiraj,
B. N. Dev
Abstract:
Au nanoparticles, prepared by thermal evaporation under high vacuum condition on Si substrate, are irradiated with Au ions at different ion energies. During ion irradiation, embedding of nanoparticles as well as ejection of nano-clusters is observed. Ejected particles (usually smaller than those on the Si substrate) due to sputtering are collected on carbon-coated transmission electron microscop…
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Au nanoparticles, prepared by thermal evaporation under high vacuum condition on Si substrate, are irradiated with Au ions at different ion energies. During ion irradiation, embedding of nanoparticles as well as ejection of nano-clusters is observed. Ejected particles (usually smaller than those on the Si substrate) due to sputtering are collected on carbon-coated transmission electron microscopy (TEM) grids. Both the TEM grids and the ion-irradiated samples are analyzed with TEM. Unirradiated as well as irradiated samples are also analyzed by Rutherford backscattering spectrometry (RBS). In the case of low energy (32 keV) ions, where the nuclear energy loss is dominant, both sputtering and embedding are less compared to medium energy (1.5 MeV). In the high energy regime (100 MeV), where the electronic energy loss is dominant, sputtering is maximum but practically there is no embedding. Ion bombardment of surfaces at an angle with respect to the surface-normal produces enhanced embedding compared to normal-incidence bombardment. The depth of embedding increases with larger angle of incidence. Au nanoparticles after ion irradiation form embedded gold-silicide. Size distribution of the sputtered Au clusters on the TEM grids for different ion energy regimes are presented.
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Submitted 27 February, 2005;
originally announced February 2005.
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Ion-beam induced 1D to 3D periodic transformation in nanostructured multilayers
Authors:
S. Bera,
B. Satpati,
K. Bhattacharjee,
P. V. Satyam,
B. N. Dev
Abstract:
Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on a glass substrate. A 2 MeV Au$^{2+}$ ion beam was rastered on the sample to obtain uniformly irradiated strips with fluences from 1$\times10^{14}$ to 1…
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Ion-irradiation-induced modifications of a periodic Pt/C multilayer system containing Fe impurity have been analyzed by transmission electron microscopy (TEM). The multilayer stack with 16 Pt/C layer pairs (period 4.23 nm) was fabricated on a glass substrate. A 2 MeV Au$^{2+}$ ion beam was rastered on the sample to obtain uniformly irradiated strips with fluences from 1$\times10^{14}$ to 1$\times10^{15}$ $ions/cm^2$. Ion-irradiation has been found to cause preferential migration of Fe towards Pt layers [Nucl. Instr. Methods Phys. Res. B212 (2003) 530]. Cross-sectional transmission electron microscopy (XTEM) shows considerable atomic redistribution for irradiation at the highest ion fluence (1$\times10^{15}$ $ions/cm^2$). Individual entities in this structure is like a cluster. Periodic multilayers have periodicity only in the direction normal to the multilayer surface. However, Fourier transform of the XTEM images of the sample irradiated at the highest-fluence shows new off-normal Fourier components of superlattice periodicities arising due to ion irradiation. With a proper understanding of this phenomenon it may be possible to fabricate three dimensional periodic structures of nanoclusters.
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Submitted 12 January, 2005;
originally announced January 2005.
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Replicating Nanostructures on Silicon by Low Energy Ion Beams
Authors:
B. Satpati,
B. N. Dev
Abstract:
We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled metal (Ag, Au, Pt) nanoislands initially grown on the substrate. The surface morphology and the structure of the irradiated surface were studied by high-resol…
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We report on a nanoscale patterning method on Si substrates using self-assembled metal islands and low-energy ion-beam irradiation. The Si nanostructures produced on the Si substrate have a one-to-one correspondence with the self-assembled metal (Ag, Au, Pt) nanoislands initially grown on the substrate. The surface morphology and the structure of the irradiated surface were studied by high-resolution transmission electron microscopy (HRTEM). TEM images of ion-beam irradiated samples show the formation of sawtooth-like structures on Si. Removing metal islands and the ion-beam induced amorphous Si by etching, we obtain a crystalline nanostructure of Si. The smallest structures emit red light when exposed to a UV light. The size of the nanostructures on Si is governed by the size of the self-assembled metal nanoparticles grown on the substrate for this replica nanopatterning. The method can easily be extended for tuning the size of the Si nanostructures by the proper choice of the metal nanoparticles and the ion energy in ion-irradiation. It is suggested that off-normal irradiation can also be used for tuning the size of the nanostructures.
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Submitted 6 January, 2005; v1 submitted 17 October, 2004;
originally announced October 2004.
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Ge growth on ion-irradiated Si self-affine fractal surfaces
Authors:
D. K. Goswami,
K. Bhattacharjee,
B. N. Dev
Abstract:
We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out o…
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We have carried out scanning tunneling microscopy experiments under ultrahigh vacuum condition to study the morphology of ultrathin Ge films eposited on pristine Si(100) and ion-irradiated Si(100) self-affine fractal surfaces. The pristine and the ion-irradiated Si(100) surface have roughness exponents of alpha=0.19+/-0.05 and alpha=0.82+/-0.04 respectively. These measurements were carried out on two halves of the same sample where only one half was ion-irradiated. Following deposition of a thin film of Ge (~6 A) the roughness exponents change to 0.11+/-0.04 and 0.99+/-0.06, respectively. Upon Ge deposition, while the roughness increases by more than an order of magnitude on the pristine surface, a smoothing is observed for the ion-irradiated surface. For the ion-irradiated surface the correlation length xi increases from 32 nm to 137 nm upon Ge deposition. Ge grows on Si surfaces in the Stranski-Krastanov or layer-plus-island mode where islands grow on a wetting layer of about three atomic layers. On the pristine surface the islands are predominantly of square or rectangular shape, while on the ion-irradiated surface the islands are nearly diamond shaped. Changes of adsorption behaviour of deposited atoms depending on the roughness exponent (or the fractal dimension) of the substrate surface are discussed.
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Submitted 9 March, 2004;
originally announced March 2004.
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Height preference and strain in Ag islands on Si(111)-(7x7)
Authors:
D. K. Goswami,
K. Bhattacharjee,
B. Satpati,
S. Roy,
G. Kuri,
P. V. Satyam,
B. N. Dev
Abstract:
Growth and strain behavior of thin Ag films on Si substrate have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution x-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage, islands containing two atomic layers of Ag are overwhelmingly formed. A…
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Growth and strain behavior of thin Ag films on Si substrate have been investigated by scanning tunneling microscopy, cross-sectional transmission electron microscopy and high resolution x-ray diffraction studies. Ag islands formed on Si at room temperature growth show strongly preferred heights and flat top. At low coverage, islands containing two atomic layers of Ag are overwhelmingly formed. At higher coverages island height distribution shows strong peaks at relative heights corresponding to an even number of Ag atomic layers. This appears to be a quantum size effect. Hexagonal disc-like islands with flat top are formed upon annealing. The annealed film shows two closely-spaced Ag(111) diffraction peaks - one weak and broad and the other narrow and more intense. The intense peak corresponds to a shorter Ag(111) planar spacing compared to the bulk value. This can be explained in terms of changes in the Ag lattice during the heating-cooling cycle due to thermal expansion coefficient mismatch between Ag and Si.
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Submitted 21 November, 2003;
originally announced November 2003.
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Nanoscale self-affine surface smoothing by ion bombardment
Authors:
D. K. Goswami,
B. N. Dev
Abstract:
Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below $\sim$~50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent…
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Topography of silicon surfaces irradiated by a 2 MeV Si$^+$ ion beam at normal incidence and ion fluences in the range $10^{15}-10^{16}$ ions/cm$^{2}$ has been investigated using scanning tunneling microscopy. At length scales below $\sim$~50 nm, surface smoothing is observed; the smoothing is more prominent at smaller length scales. The smoothed surface is self-affine with a scaling exponent $α=0.53\pm0.02$.
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Submitted 23 December, 2002;
originally announced December 2002.
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X-ray standing wave and reflectometric characterization of multilayer structures
Authors:
S. K. Ghose,
B. N. Dev
Abstract:
Microstructural characterization of synthetic periodic multilayers by x-ray standing waves have been presented. It has been shown that the analysis of multilayers by combined x-ray reflectometry (XRR) and x-ray standing wave (XSW) techniques can overcome the deficiencies of the individual techniques in microstructural analysis. While interface roughnesses are more accurately determined by the XR…
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Microstructural characterization of synthetic periodic multilayers by x-ray standing waves have been presented. It has been shown that the analysis of multilayers by combined x-ray reflectometry (XRR) and x-ray standing wave (XSW) techniques can overcome the deficiencies of the individual techniques in microstructural analysis. While interface roughnesses are more accurately determined by the XRR technique, layer composition is more accurately determined by the XSW technique where an element is directly identified by its characteristic emission. These aspects have been explained with an example of a 20 period Pt/C multilayer. The composition of the C-layers due to Pt dissolution in the C-layers, Pt$_{x}$C$_{1-x}$, has been determined by the XSW technique. In the XSW analysis when the whole amount of Pt present in the C-layers is assumed to be within the broadened interface, it l eads to larger interface roughness values, inconsistent with those determined by the XRR technique. Constraining the interface roughness values to those determined by the XRR technique, requires an additional amount of dissolved Pt in the C-layers to expl ain the Pt fluorescence yield excited by the standing wave field. This analysis provides the average composition Pt$_{x}$C$_{1-x}$ of the C-layers .
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Submitted 16 January, 2001;
originally announced January 2001.
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Shape Transition in the Epitaxial Growth of Gold Silicide in Au Thin Films on Si(111)
Authors:
K. Sekar,
G. Kuri,
P. V. Satyam,
B. Sundaravel,
D. P. Mahapatra,
B. N. Dev
Abstract:
Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island…
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Growth of epitaxial gold silicide islands on bromine-passivated Si(111) substrates has been studied by optical and electron microscopy, electron probe micro analysis and helium ion backscattering. The islands grow in the shape of equilateral triangles up to a critical size beyond which the symmetry of the structure is broken, resulting in a shape transition from triangle to trapezoid. The island edges are aligned along $Si[110]$ directions. We have observed elongated islands with aspect ratios as large as 8:1. These islands, instead of growing along three equivalent [110] directions on the Si(111) substrate, grow only along one preferential direction. This has been attributed to the vicinality of the substrate surface.
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Submitted 1 July, 1994;
originally announced July 1994.
