-
Integration of Quantum Emitters with Lithium Niobate Photonics
Authors:
Shahriar Aghaeimeibodi,
Boris Desiatov,
Je-Hyung Kim,
Chang-Min Lee,
Mustafa Atabey Buyukkaya,
Aziz Karasahin,
Christopher J. K. Richardson,
Richard P. Leavitt,
Marko Lončar,
Edo Waks
Abstract:
The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulat…
▽ More
The integration of quantum emitters with integrated photonics enables complex quantum photonic circuits that are necessary for photonic implementation of quantum simulators, computers, and networks. Thin-film lithium niobate is an ideal material substrate for quantum photonics because it can tightly confine light in small waveguides and has a strong electro-optic effect that can switch and modulate single photons at low power and high speed. However, lithium niobite lacks efficient single-photon emitters, which are essential for scalable quantum photonic circuits. We demonstrate deterministic coupling of single-photon emitters with a lithium niobate photonic chip. The emitters are composed of InAs quantum dots embedded in an InP nanobeam, which we transfer to a lithium niobate waveguide with nanoscale accuracy using a pick-and place approach. An adiabatic taper transfers single photons emitted into the nanobeam to the lithium niobate waveguide with high efficiency. We verify the single photon nature of the emission using photon correlation measurements performed with an on-chip beamsplitter. Our results demonstrate an important step toward fast, reconfigurable quantum photonic circuits for quantum information processing.
△ Less
Submitted 12 October, 2018;
originally announced October 2018.
-
On-chip integrated, silicon-graphene plasmonic Schottky photodetector, with high responsivity and avalanche photogain
Authors:
Ilya Goykhman,
Ugo Sassi,
Boris Desiatov,
Noa Mazurski,
Silvia Milana,
Domenico de Fazio,
Anna Eiden,
Jacob Khurgin,
Joseph Shappir,
Uriel Levy,
Andrea C. Ferrari
Abstract:
We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves…
▽ More
We report an on-chip integrated metal-graphene-silicon plasmonic Schottky photodetector with 85mA/W responsivity at 1.55 um and 7% internal quantum efficiency. This is one order of magnitude higher than metal-silicon Schottky photodetectors operated in the same conditions. At a reverse bias of 3V, we achieve avalanche multiplication, with 0.37A/W responsivity and avalanche photogain~2. This paves the way to graphene integrated silicon photonics.
△ Less
Submitted 26 December, 2015;
originally announced December 2015.
-
Model for quantum efficiency of guided mode plasmonic enhanced silicon Schottky detectors
Authors:
Ilya Goykhman,
Boris Desiatov,
Joseph Shappir,
Jacob B. Khurgin,
Uriel Levy
Abstract:
Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict th…
▽ More
Plasmonic enhanced Schottky detectors operating on the basis of the internal photoemission process are becoming an attractive choice for detecting photons with sub bandgap energy. Yet, the quantum efficiency of these detectors appears to be low compare to the more conventional detectors which are based on interband transitions in a semiconductor. Hereby we provide a theoretical model to predict the quantum efficiency of guided mode internal photoemission photodetector with focus on the platform of silicon plasmonics. The model is supported by numerical simulations and comparison to experimental results. Finally, we discuss approaches for further enhancement of the quantum efficiency.
△ Less
Submitted 12 January, 2014;
originally announced January 2014.
