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Photoionization and transient Wannier-Stark ladder in silicon: First principle simulations versus Keldysh theory
Authors:
Thibault J. -Y. Derrien,
Nicolas Tancogne-Dejean,
Vladimir P. Zhukov,
Heiko Appel,
Angel Rubio,
Nadezhda M. Bulgakova
Abstract:
Nonlinear photoionization of dielectrics and semiconductors is widely treated in the frames of the Keldysh theory whose validity is limited to small photon energies compared to the band gap and relatively low laser intensities. The time-dependent density functional theory (TDDFT) simulations, which are free of these limitations, enable to gain insight into non-equilibrium dynamics of the electroni…
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Nonlinear photoionization of dielectrics and semiconductors is widely treated in the frames of the Keldysh theory whose validity is limited to small photon energies compared to the band gap and relatively low laser intensities. The time-dependent density functional theory (TDDFT) simulations, which are free of these limitations, enable to gain insight into non-equilibrium dynamics of the electronic structure. Here we apply the TDDFT to investigate photoionization of silicon crystal by ultrashort laser pulses in a wide range of laser wavelengths and intensities and compare the results with predictions of the Keldysh theory. Photoionization rates derived from the simulations considerably exceed the data obtained with the Keldysh theory within the validity range of the latter. Possible reasons of the discrepancy are discussed and we provide fundamental data on the photoionization rates beyond the limits of the Keldysh theory. By investigating the features of the Stark shift as a function of photon energy and laser field strength, a manifestation of the transient Wannier-Stark ladder states have been revealed which become blurred with increasing laser field strength. Finally, it is shown that the TDDFT simulations can potentially provide reliable data on the electron damping time that is of high importance for large-scale modeling.
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Submitted 18 April, 2021;
originally announced April 2021.
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Wavelength Dependence of Picosecond Laser-Induced Periodic Surface Structures on Copper
Authors:
Stella Maragkaki,
Thibault J. -Y. Derrien,
Yoann Levy,
Nadezhda M. Bulgakova,
Andreas Ostendorf,
Evgeny L. Gurevich
Abstract:
The physical mechanisms of the laser-induced periodic surface structures (LIPSS) formation are studied in this paper for single-pulse irradiation regimes. The change in the LIPSS period with wavelength of incident laser radiation is investigated experimentally, using a picosecond laser system, which provides 7-ps pulses in near-IR, visible, and UV spectral ranges. The experimental results are comp…
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The physical mechanisms of the laser-induced periodic surface structures (LIPSS) formation are studied in this paper for single-pulse irradiation regimes. The change in the LIPSS period with wavelength of incident laser radiation is investigated experimentally, using a picosecond laser system, which provides 7-ps pulses in near-IR, visible, and UV spectral ranges. The experimental results are compared with predictions made under the assumption that the surface-scattered waves are involved in the LIPSS formation. Considerable disagreement suggests that hydrodynamic mechanisms can be responsible for the observed pattern periodicity.
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Submitted 13 February, 2017;
originally announced February 2017.
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Properties of Surface Plasmon Polaritons on lossy materials: Lifetimes, periods and excitation conditions
Authors:
Thibault J. -Y. Derrien,
Jörg Krüger,
Jörn Bonse
Abstract:
The possibility to excite Surface Plasmon Polaritons (SPPs) at the interface between two media depends on the optical properties of both media and geometrical aspects. Specific conditions allowing the coupling of light with a plasmon-active interface must be satisfied. Plasmonic effects are well described in noble metals where the imaginary part of the dielectric permittivity is often neglected ("…
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The possibility to excite Surface Plasmon Polaritons (SPPs) at the interface between two media depends on the optical properties of both media and geometrical aspects. Specific conditions allowing the coupling of light with a plasmon-active interface must be satisfied. Plasmonic effects are well described in noble metals where the imaginary part of the dielectric permittivity is often neglected ("perfect medium approximation"). However, some systems exist for which such approximation cannot be applied, hence requiring a refinement of the common SPP theory. In this context, several properties of SPPs such as excitation conditions, period of the electromagnetic field modulation and SPP lifetime then may strongly deviate from that of the perfect medium approximation. In this paper, calculations taking into account the imaginary part of the dielectric permittivities are presented. The model identifies analytical terms which should not be neglected in the mathematical description of SPPs on lossy materials. These calculations are applied to numerous material combinations resulting in a prediction of the corresponding SPP features. A list of plasmon-active interfaces is provided along with a quantification of the above mentioned SPP properties in the regime where the perfect medium approximation is not applicable.
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Submitted 20 October, 2016;
originally announced October 2016.
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Rippled area formed by surface plasmon polaritons upon femtosecond laser double-pulse irradiation of silicon: the role of carrier generation and relaxation processes
Authors:
Thibault J. -Y. Derrien,
Jörg Krüger,
Tatiana E. Itina,
Sandra Höhm,
Arkadi Rosenfeld,
Jörn Bonse
Abstract:
The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion…
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The formation of laser-induced periodic surface structures (LIPSS, ripples) upon irradiation of silicon with multiple irradiation sequences consisting of femtosecond laser pulse pairs (pulse duration 150 fs, central wavelength 800 nm) is studied numerically using a rate equation system along with a two-temperature model accounting for one- and two-photon absorption and subsequent carrier diffusion and Auger recombination processes. The temporal delay between the individual equal-energy fs-laser pulses was varied between $0$ and $\sim 4$ ps for quantification of the transient carrier densities in the conduction band of the laser-excited silicon. The results of the numerical analysis reveal the importance of carrier generation and relaxation processes in fs-LIPSS formation on silicon and quantitatively explain the two time constants of the delay dependent decrease of the Low-Spatial-Frequency LIPSS (LSFL) area observed experimentally. The role of carrier generation, diffusion and recombination are quantified individually.
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Submitted 16 December, 2013;
originally announced December 2013.
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Possible surface plasmon polariton excitation under femtosecond laser irradiation of silicon
Authors:
Thibault J. -Y. Derrien,
Tatiana E. Itina,
Rémi Torres,
Thierry Sarnet,
Marc Sentis
Abstract:
The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such a…
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The mechanisms of ripple formation on silicon surface by femtosecond laser pulses are investigated. We demonstrate the transient evolution of the density of the excited free-carriers. As a result, the experimental conditions required for the excitation of surface plasmon polaritons are revealed. The periods of the resulting structures are then investigated as a function of laser parameters, such as the angle of incidence, laser fluence, and polarization. The obtained dependencies provide a way of better control over the properties of the periodic structures induced by femtosecond laser on the surface of a semiconductor material.
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Submitted 1 August, 2013; v1 submitted 5 March, 2013;
originally announced March 2013.
