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Gigantic Harmonic Generation in Néel-Torque Antiferromagnetic Resonance
Authors:
Kuangyin Deng,
Ran Cheng
Abstract:
We theoretically investigate the resonant and higher-harmonic magnetic responses of a collinear antiferromagnet induced by Néel spin-orbit torques (NSOTs). By deriving the dynamical susceptibilities up to the third harmonic, we find remarkable NSOT-induced amplifications of the linear and nonlinear magnetic dynamics by orders of magnitude compared to conventional spin-orbit torques, enabling highl…
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We theoretically investigate the resonant and higher-harmonic magnetic responses of a collinear antiferromagnet induced by Néel spin-orbit torques (NSOTs). By deriving the dynamical susceptibilities up to the third harmonic, we find remarkable NSOT-induced amplifications of the linear and nonlinear magnetic dynamics by orders of magnitude compared to conventional spin-orbit torques, enabling highly-efficient frequency conversion in the sub-terahertz frequency range. We then propose a multilayer antiferromagnetic nano-device leveraging the gigantic harmonic generation to achieve unprecedented frequency amplifiers and converters. Our work uncovers a previously overlooked role of the NSOTs in nonlinear dynamics.
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Submitted 28 June, 2025;
originally announced June 2025.
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Emerging (2+1)D electrodynamics and topological instanton in pseudo-Hermitian two-level systems
Authors:
Kuangyin Deng,
Ran Cheng
Abstract:
We reveal a hidden electrodynamical structure emerging from a general $2\times2$ pseudo-Hermitian system that exhibits real spectra. Even when the Hamiltonian does not explicitly depend on time, the Berry curvature can be mapped onto a $2+1$ dimensional electromagnetic field arising from an artificial spacetime instanton, in sharp contrast to the Hermitian systems where the Berry curvature is equi…
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We reveal a hidden electrodynamical structure emerging from a general $2\times2$ pseudo-Hermitian system that exhibits real spectra. Even when the Hamiltonian does not explicitly depend on time, the Berry curvature can be mapped onto a $2+1$ dimensional electromagnetic field arising from an artificial spacetime instanton, in sharp contrast to the Hermitian systems where the Berry curvature is equivalent to the static magnetic field of a magnetic monopole in three spatial dimensions. The instanton appearing as a spacetime singularity carries a topological charge that quantizes the jump of magnetic flux of the Berry curvature at the time origin. Our findings are demonstrated in a simple example related to antiferromagnetic magnons.
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Submitted 12 May, 2025;
originally announced May 2025.
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Visualizing Field-free Deterministic Magnetic Switching of all-van der Waals Spin-Orbit Torque System Using Spin Ensembles in Hexagonal Boron Nitride
Authors:
Xi Zhang,
Jingcheng Zhou,
Chaowei Hu,
Kuangyin Deng,
Chuangtang Wang,
Nishkarsh Agarwal,
Hanshang Jin,
Faris A. Al-Matouq,
Stelo Xu,
Roshan S. Trivedi,
Senlei Li,
Sumedh Rathi,
Hanyi Lu,
Zhigang Jiang,
Valentin Taufour,
Robert Hovden,
Liuyan Zhao,
Ran Cheng,
Xiaodong Xu,
Jiun-Haw Chu,
Chunhui Rita Du,
Hailong Wang
Abstract:
Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great…
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Recently, optically active spin defects embedded in van der Waals (vdW) crystals have emerged as a transformative quantum sensing platform to explore cutting-edge materials science and quantum physics. Taking advantage of excellent solid-state integrability, this new class of spin defects can be arranged in controllable nanoscale proximity of target materials in vdW heterostructures, showing great promise for improving spatial resolution and field sensitivity of current sensing technologies. Building on this state-of-the-art measurement platform, here we report hexagonal boron nitride-based quantum imaging of field-free deterministic magnetic switching of room-temperature two-dimensional magnet Fe3GaTe2 in an all-vdW spin-orbit torque (SOT) system. By visualizing SOT-driven variations of nanoscale Fe3GaTe2 magnetic stray field profile under different conditions, we have revealed how the observed magnetic switching evolves from deterministic to indeterministic behavior due to the interplay between out-of-plane spins, in-plane spins and Joule heating. This understanding, which is otherwise difficult to access by conventional transport measurements, offers valuable insights on material design, testing, and evaluation of next-generation vdW spintronic devices.
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Submitted 6 February, 2025;
originally announced February 2025.
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Strong interaction induced dimensional crossover in 1D quantum gas
Authors:
Zhongchi Zhang,
Zihan Zhao,
Huaichuan Wang,
Ken Deng,
Yuqi Liu,
Wenlan Chen,
Jiazhong Hu
Abstract:
We generated a one-dimensional quantum gas confined in an elongated optical dipole trap instead of 2D optical lattices. The sample, comprising thousands of atoms, spans several hundred micrometers and allows for independent control of temperature and chemical potential using Feshbach resonance. This allows us to directly observe and investigate the spatial distribution and associated excitation of…
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We generated a one-dimensional quantum gas confined in an elongated optical dipole trap instead of 2D optical lattices. The sample, comprising thousands of atoms, spans several hundred micrometers and allows for independent control of temperature and chemical potential using Feshbach resonance. This allows us to directly observe and investigate the spatial distribution and associated excitation of 1D quantum gas without any ensemble averaging. In this system, we observed that the dimension of 1D gas will be popped up into 3D due to strong interaction without changing any trapping confinement. During the dimensional crossover, we found that increasing the scattering length leads to the failure of 1D theories, including 1D mean field, Yang-Yang equation, and 1D hydrodynamics. Specifically, the modified Yang-Yang equation effectively describes this 1D system at temperatures beyond the 1D threshold, but it does not account for the effects of stronger interactions. Meanwhile, we observe two possible quantized plateaus of breathing-mode oscillation frequencies predicted by 1D and 3D hydrodynamics, corresponding to weak and strong interactions respectively. And there is also a universal crossover connecting two different regimes where both hydrodynamics fail.
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Submitted 20 November, 2024;
originally announced November 2024.
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Correlated topological flat bands in rhombohedral graphite
Authors:
Hongyun Zhang,
Qian Li,
Michael G. Scheer,
Renqi Wang,
Chuyi Tuo,
Nianlong Zou,
Wanying Chen,
Jiaheng Li,
Xuanxi Cai,
Changhua Bao,
Ming-Rui Li,
Ke Deng,
Kenji Watanabe,
Takashi Taniguchi,
Mao Ye,
Peizhe Tang,
Yong Xu,
Pu Yu,
Jose Avila,
Pavel Dudin,
Jonathan D. Denlinger,
Hong Yao,
Biao Lian,
Wenhui Duan,
Shuyun Zhou
Abstract:
Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk R…
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Flat bands and nontrivial topological physics are two important topics of condensed matter physics. With a unique stacking configuration analogous to the Su-Schrieffer-Heeger (SSH) model, rhombohedral graphite (RG) is a potential candidate for realizing both flat bands and nontrivial topological physics. Here we report experimental evidence of topological flat bands (TFBs) on the surface of bulk RG, which are topologically protected by bulk helical Dirac nodal lines via the bulk-boundary correspondence. Moreover, upon {\it in situ} electron doping, the surface TFBs show a splitting with exotic doping evolution, with an order-of-magnitude increase in the bandwidth of the lower split band, and pinning of the upper band near the Fermi level. These experimental observations together with Hartree-Fock calculations suggest that correlation effects are important in this system. Our results demonstrate RG as a new platform for investigating the rich interplay between nontrivial band topology, correlation effects, and interaction-driven symmetry-broken states.
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Submitted 12 November, 2024;
originally announced November 2024.
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Optimizing the image projection of spatially incoherent light from a multimode fiber
Authors:
Ken Deng,
Zhongchi Zhang,
Huaichuan Wang,
Zihan Zhao,
Jiazhong Hu
Abstract:
We study the spatially incoherent light generated by a multimode fiber(MMF) in the application of image projection designed for the ultracold-atom experiments. Inspired by previous half-analytic methods concerning the incoherent light, here a full-numerical model is established to provide more quantitative descriptions, and part of results is compared with experiments. Particularly, our model abou…
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We study the spatially incoherent light generated by a multimode fiber(MMF) in the application of image projection designed for the ultracold-atom experiments. Inspired by previous half-analytic methods concerning the incoherent light, here a full-numerical model is established to provide more quantitative descriptions, and part of results is compared with experiments. Particularly, our model about the MMF is also compatible with light propagation in free space. Based on this, we study both the intrinsic speckle and the perturbation robustness of a MMF light field, under the influence of light propagation and fiber parameters. We point out several guidelines about choosing the suitable MMF in creating a spatially incoherent light source, which is useful in the context of the ultracold-atom experiments associating with the optical potential projection.
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Submitted 25 October, 2024; v1 submitted 18 October, 2024;
originally announced October 2024.
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Topology-induced symmetry breaking demonstrated in antiferromagnetic magnons on a Möbius strip
Authors:
Kuangyin Deng,
Ran Cheng
Abstract:
We propose a mechanism of topology-induced symmetry breaking, where certain local symmetry preserved by the Hamiltonian is explicitly broken in the eigenmodes of excitation due to nontrivial real-space topology. We demonstrate this phenomenon by studying magnonic excitations on a Möbius strip comprising of two antiferromagnetically coupled spin chains. Even with a simple Hamiltonian respecting loc…
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We propose a mechanism of topology-induced symmetry breaking, where certain local symmetry preserved by the Hamiltonian is explicitly broken in the eigenmodes of excitation due to nontrivial real-space topology. We demonstrate this phenomenon by studying magnonic excitations on a Möbius strip comprising of two antiferromagnetically coupled spin chains. Even with a simple Hamiltonian respecting local rotational symmetry and all local curvature effects ignored, magnons exhibit linear polarization of the Néel vector devoid of chirality, forming two non-degenerate branches that cannot be smoothly connected to or be globally decomposed by the circularly-polarized magnons. Correspondingly, one branch undergoes a spectral shift and only admits standing waves of half-integer wavelength, whereas the other only affords standing waves of integer wavelength. Under the Möbius boundary condition, we further identify an exotic phase hosting spontaneous antiferromagnetic order whilst all exchange couplings are ferromagnetic. The suppression of chirality in the order parameter dynamics, hence the pattern of standing waves, can be generalized to other elementary excitations on non-orientable surfaces. Our findings showcase the profound influence of real-space topology on the physical nature of not just the ground state but also the quasiparticles.
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Submitted 1 May, 2025; v1 submitted 12 March, 2024;
originally announced March 2024.
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Even-Odd-Layer-Dependent Symmetry Breaking in Synthetic Antiferromagnets
Authors:
Mitra Mani Subedi,
Kuangyin Deng,
Benedetta Flebus,
Joseph Sklenar
Abstract:
In this work we examine synthetic antiferromagnetic structures consisting of two, three, and four antiferromagnetic coupled layers, i.e., bilayers, trilayers, and tetralayers. We vary the thickness of the ferromagnetic layers across all structures and, using a macrospin formalism, find that the nearest neighbor exchange interaction between layers is consistent across all structures for a given thi…
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In this work we examine synthetic antiferromagnetic structures consisting of two, three, and four antiferromagnetic coupled layers, i.e., bilayers, trilayers, and tetralayers. We vary the thickness of the ferromagnetic layers across all structures and, using a macrospin formalism, find that the nearest neighbor exchange interaction between layers is consistent across all structures for a given thickness. Our model and experimental results demonstrate significant differences in how the magnetostatic equilibrium states of even and odd-layered structures evolve as a function of the external field. Even layered structures continuously evolve from a collinear antiferromagnetic state to a spin canted non-collinear magnetic configuration that is mirror-symmetric about the external field. In contrast, odd-layered structures begin with a ferrimagnetic ground state; at a critical field, the ferrimagnetic ground state evolves into a non-collinear state with broken symmetry. Specifically, the magnetic moments found in the odd-layered samples possess stable static equilibrium states that are no longer mirror-symmetric about the external field after a critical field is reached. Our results reveal the rich behavior of synthetic antiferromagnets.
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Submitted 16 August, 2023;
originally announced August 2023.
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Emergent zero-field anomalous Hall effect in a reconstructedrutileantiferromagnetic metal
Authors:
Meng Wang,
Katsuhiro Tanaka,
Shiro Sakai,
Ziqian Wang,
Ke Deng,
Yingjie Lyu,
Cong Li,
Di Tian,
Shengchun Shen,
Naoki Ogawa,
Naoya Kanazawa,
Pu Yu,
Ryotaro Arita,
Fumitaka Kagawa
Abstract:
Anomalous Hall effect (AHE) emerged in antiferromagnetic metals shows intriguing physics and application potential. In contrast to certain noncollinear antiferromagnets, rutile RuO$_2$ has been proposed recently to exhibit a crystal-assisted AHE with collinear antiferromagnetism. However, in RuO$_2$, the on-site magnetic moment accompanying itinerant 4d electrons is quite small, and more important…
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Anomalous Hall effect (AHE) emerged in antiferromagnetic metals shows intriguing physics and application potential. In contrast to certain noncollinear antiferromagnets, rutile RuO$_2$ has been proposed recently to exhibit a crystal-assisted AHE with collinear antiferromagnetism. However, in RuO$_2$, the on-site magnetic moment accompanying itinerant 4d electrons is quite small, and more importantly, the AHE at zero external field is prohibited by symmetry because of the high-symmetry [001] direction of the Néel vector. Here, we show the AHE at zero field in the collinear antiferromagnet, Cr-doped RuO$_2$. The appropriate doping of Cr at Ru sites results in a rotation of the Néel vector from [001] to [110] and enhancement of the on-site magnetic moment by one order of magnitude while maintaining a metallic state with the collinear antiferromagnetism. The AHE with vanishing net moment in the Ru$_{0.8}$Cr$_{0.2}$O$_2$ exhibits an orientation dependence consistent with the [110]-oriented Néel vector. These results open a new avenue to manipulate AHE in antiferromagnetic metals.
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Submitted 12 July, 2023;
originally announced July 2023.
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Chiral Dirac fermion in a collinear antiferromagnet
Authors:
Ao Zhang,
Ke Deng,
Jieming Sheng,
Pengfei Liu,
Shiv Kumar,
Kenya Shimada,
Zhicheng Jiang,
Zhengtai Liu,
Dawei Shen,
Jiayu Li,
Jun Ren,
Le Wang,
Liang Zhou,
Yoshihisa Ishikawa,
Qiang Zhang,
Garry McIntyre,
Dehong Yu,
Enke Liu,
Liusuo Wu,
Chaoyu Chen,
Qihang Liu
Abstract:
In a Dirac semimetal, the massless Dirac fermion has zero chirality, leading to surface states connected adiabatically to a topologically trivial surface state as well as vanishing anomalous Hall effect (AHE). Recently, it is predicted that in the nonrelativistic limit of certain collinear antiferromagnets, there exists a type of chiral Dirac-like fermion, whose dispersion manifests four-fold dege…
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In a Dirac semimetal, the massless Dirac fermion has zero chirality, leading to surface states connected adiabatically to a topologically trivial surface state as well as vanishing anomalous Hall effect (AHE). Recently, it is predicted that in the nonrelativistic limit of certain collinear antiferromagnets, there exists a type of chiral Dirac-like fermion, whose dispersion manifests four-fold degenerate crossing points formed by spin-degenerate linear bands, with topologically protected Fermi arcs. Such unconventional chiral fermion, protected by a hidden SU(2) symmetry in the hierarchy of an enhanced crystallographic group, namely spin space group, is not experimentally verified yet. Here, by angle-resolved photoemission spectroscopy measurements, we reveal the surface origin of the electron pocket at the Fermi surface in collinear antiferromagnet CoNb3S6. Combining with neutron diffraction and first-principles calculations, we suggest a multidomain collinear AFM configuration, rendering the the existence of the Fermi-arc surface states induced by chiral Dirac-like fermions. Our work provides spectral evidence of the chiral Dirac-like fermion caused by particular spin symmetry in CoNb3S6, paving an avenue for exploring new emergent phenomena in antiferromagnets with unconventional quasiparticle excitations.
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Submitted 17 December, 2023; v1 submitted 28 January, 2023;
originally announced January 2023.
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Magnon-magnon interactions induced by spin pumping-driven symmetry breaking in synthetic antiferromagnets
Authors:
Mitra Mani Subedi,
Kuangyin Deng,
Yuzan Xiong,
Jaret Mongeon,
Mohammad Tomal Hossain,
Peter Meisenheimer,
Edison Zhou,
John Heron,
Matthias Benjamin Jungfleisch,
Wei Zhang,
Benedetta Flebus,
Joseph Sklenar
Abstract:
The richness in both the dispersion and energy of antiferromagnetic magnons has spurred the magnetism community to consider antiferromagnets for future spintronic/magnonic applications. However, the excitation and control of antiferromagnetic magnons remains challenging, especially when compared to ferromagnetic counterparts. A middle ground is found with synthetic antiferromagnet metamaterials, w…
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The richness in both the dispersion and energy of antiferromagnetic magnons has spurred the magnetism community to consider antiferromagnets for future spintronic/magnonic applications. However, the excitation and control of antiferromagnetic magnons remains challenging, especially when compared to ferromagnetic counterparts. A middle ground is found with synthetic antiferromagnet metamaterials, where acoustic and optical magnons exist at GHz frequencies. In these materials, the magnon energy spectrum can be tuned by static symmetry-breaking external fields or dipolar interactions hybridizing optical and acoustic magnon branches. Here, we experimentally measure the magnon energy spectrum of synthetic antiferromagnetic tetralayers, and discover avoided energy level crossings in the energy spectrum that are unexplained by the antiferromagnetic interlayer coupling. We explain our experimental results using a phenomenological model incorporating both fieldlike and dampinglike torques generated by spin pumping in noncollinear magnetic multilayers separated by normal-metal spacers. We show that an asymmetry in the fieldlike torques acting on different magnetic layers can lift the spectral degeneracies of acoustic and optical magnon branches and yield symmetry-breaking induced magnon-magnon interactions. Our work extends the phenomenology of spin pumping to noncollinear magnetization configurations and significantly expands ways of engineering magnon-magnon interactions within antiferromagnets and quantum hybrid magnonic materials.
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Submitted 18 January, 2023;
originally announced January 2023.
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Multitude of exceptional points in van der Waals magnets
Authors:
Xin Li,
Kuangyin Deng,
Benedetta Flebus
Abstract:
Several works have recently addressed the emergence of exceptional points (EPs), i.e., spectral singularities of non-Hermitian Hamiltonians, in the long-wavelength dynamics of coupled magnetic systems. Here, by focusing on the driven magnetization dynamics of a van der Waals ferromagnetic bilayer, we show that exceptional points can appear over extended portions of the first Brillouin zone as well…
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Several works have recently addressed the emergence of exceptional points (EPs), i.e., spectral singularities of non-Hermitian Hamiltonians, in the long-wavelength dynamics of coupled magnetic systems. Here, by focusing on the driven magnetization dynamics of a van der Waals ferromagnetic bilayer, we show that exceptional points can appear over extended portions of the first Brillouin zone as well. Furthermore, we demonstrate that the effective non-Hermitian magnon Hamiltonian, whose eigenvalues are purely real or come in complex-conjugate pairs, respects an unusual wavevector-dependent pseudo-Hermiticity. Finally, for both armchair and zigzag nanoribbon geometries, we discuss both the complex and purely real spectra of the topological edge states and their experimental implications.
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Submitted 30 July, 2022; v1 submitted 12 July, 2022;
originally announced July 2022.
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Exceptional points as signatures of dynamical magnetic phase transitions
Authors:
Kuangyin Deng,
Xin Li,
Benedetta Flebus
Abstract:
One of the most fascinating and puzzling aspects of non-Hermitian systems is their spectral degeneracies, i.e., exceptional points (EPs), at which both eigenvalues and eigenvectors coalesce to form a defective state space. While coupled magnetic systems are natural hosts of EPs, the relation between the linear and nonlinear spin dynamics in the proximity of EPs remains relatively unexplored. Here…
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One of the most fascinating and puzzling aspects of non-Hermitian systems is their spectral degeneracies, i.e., exceptional points (EPs), at which both eigenvalues and eigenvectors coalesce to form a defective state space. While coupled magnetic systems are natural hosts of EPs, the relation between the linear and nonlinear spin dynamics in the proximity of EPs remains relatively unexplored. Here we theoretically investigate the spin dynamics of easy-plane magnetic bilayers in the proximity of exceptional points. We show that the interplay between the intrinsically dissipative spin dynamics and external drives can yield a rich dynamical phase diagram. In particular, we find that, in antiferromagnetically coupled bilayers, a periodic oscillating dynamical phase emerges in the region enclosed by EPs. Our results not only offer a pathway for probing magnetic EPs and engineering magnetic nano-oscillators with large-amplitude oscillations, but also uncover the relation between exceptional points and dynamical phase transitions in systems displaying non-linearities.
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Submitted 6 March, 2023; v1 submitted 4 May, 2022;
originally announced May 2022.
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Parameter-free quantum hydrodynamic theory for plasmonics: Electron density-dependent damping rate and diffusion coefficient
Authors:
Qi-Hong Hu,
Ren-Feng Liu,
Xin-Yu Shan,
Xuan-Ren Chen,
Hong Yang,
Peng Kong,
Xiao-Yun Wang,
Ke Deng,
Xiangyang Peng,
Dong Xian,
Yong-Gang Huang
Abstract:
Plasmonics is a rapid growing field, which has enabled both fundamental science and inventions of various quantum optoelectronic devices. An accurate and efficient method to calculate the optical response of metallic structures with feature size in the nanoscale plays an important role. Quantum hydrodynamic theory (QHT) provides an efficient description of the free-electron gas, where quantum effe…
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Plasmonics is a rapid growing field, which has enabled both fundamental science and inventions of various quantum optoelectronic devices. An accurate and efficient method to calculate the optical response of metallic structures with feature size in the nanoscale plays an important role. Quantum hydrodynamic theory (QHT) provides an efficient description of the free-electron gas, where quantum effects of nonlocality and spill-out are taken into account. In this work, we introduce a general QHT that includes diffusion to account for the broadening, which is a key problem in practical applications of surface plasmon. We will introduce a density-dependent diffusion coefficient to give very accurate linewidth. It is a self-consistent method, in which both the ground and excited states are solved by using the same energy functional, with the kinetic energy described by the Thomas-Fermi and von Weizsäcker (vW) formalisms. In addition, our QHT method is stable by introduction of an electron density-dependent damping rate. For sodium nanosphere of various sizes, the plasmon energy and broadening by our QHT method are in excellent agreement with those by density functional theory and Kreibig formula. By applying our QHT method to sodium jellium nanorods, we clearly show that our method enables a parameter-free simulation, i.e. without resorting to any empirical parameter, such as size-dependent damping rate and diffusing coefficient. It is found that there exists a perfect linear relation between the resonance wavelength and aspect radio. The width decreases with increasing aspect ratio and height. The calculations show that our QHT method provides an explicit and unified way to account for size-dependent frequency shifts and broadening of arbitrarily shaped geometries. It is reliable and robust with great predicability, and hence provides a general and efficient platform to study plasmonics.
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Submitted 20 January, 2022; v1 submitted 6 January, 2022;
originally announced January 2022.
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Spatially-resolved electronic structure of stripe domains in IrTe$_2$ through electronic structure microscopy
Authors:
Changhua Bao,
Hongyun Zhang,
Qian Li,
Shaohua Zhou,
Haoxiong Zhang,
Ke Deng,
Kenan Zhang,
Laipeng Luo,
Wei Yao,
Chaoyu Chen,
José Avila,
Maria C. Asensio,
Yang Wu,
Shuyun Zhou
Abstract:
Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. He…
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Phase separation in the nanometer- to micrometer-scale is characteristic for correlated materials, for example, high temperature superconductors, colossal magnetoresistance manganites, Mott insulators, etc. Resolving the electronic structure with spatially-resolved information is critical for revealing the fundamental physics of such inhomogeneous systems yet this is challenging experimentally. Here by using nanometer- and micrometer-spot angle-resolved photoemission spectroscopies (NanoARPES and MicroARPES), we reveal the spatially-resolved electronic structure in the stripe phase of IrTe$_2$. Each separated domain shows two-fold symmetric electronic structure with the mirror axis aligned along 3 equivalent directions, and 6$\times$1 replicas are clearly identified. Moreover, such electronic structure inhomogeneity disappears across the stripe phase transition, suggesting that electronic phase with broken symmetry induced by the 6$\times$1 modulation is directly related to the stripe phase transition of IrTe$_2$. Our work demonstrates the capability of NanoARPES and MicroARPES in elucidating the fundamental physics of phase-separated materials.
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Submitted 28 October, 2021;
originally announced October 2021.
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Experimental evidence of plasmarons and effective fine structure constant in electron-doped graphene/h-BN heterostructure
Authors:
Hongyun Zhang,
Shuopei Wang,
Eryin Wang,
Xiaobo Lu,
Qian Li,
Changhua Bao,
Ke Deng,
Haoxiong Zhang,
Wei Yao,
Guorui Chen,
Alexei V. Fedorov,
Jonathan D. Denlinger,
Kenji Watanabe,
Takashi Taniguchi,
Guangyu Zhang,
Shuyun Zhou
Abstract:
Electron-electron interaction is fundamental in condensed matter physics and can lead to composite quasiparticles called plasmarons, which strongly renormalize the dispersion and carry information of electron-electron coupling strength as defined by the effective fine structure constant $α_{ee}^*$. Although h-BN with unique dielectric properties has been widely used as an important substrate for g…
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Electron-electron interaction is fundamental in condensed matter physics and can lead to composite quasiparticles called plasmarons, which strongly renormalize the dispersion and carry information of electron-electron coupling strength as defined by the effective fine structure constant $α_{ee}^*$. Although h-BN with unique dielectric properties has been widely used as an important substrate for graphene, so far there is no experimental report of plasmarons in graphene/h-BN yet. Here, we report direct experimental observation of plasmaron dispersion in graphene/h-BN heterostructures through angle-resolved photoemission spectroscopy (ARPES) measurements upon {\it in situ} electron doping. Characteristic diamond-shaped dispersion is observed near the Dirac cone in both 0$^\circ$ (aligned) and 13.5$^\circ$ (twisted) graphene/h-BN, and the electron-electron interaction strength $α_{ee}^*$ is extracted to be $α_{ee}^*\approx0.9\pm 0.1$, highlighting the important role of electron-electron interaction. Our results suggest graphene/h-BN as an ideal platform for investigating strong electron-electron interaction with weak dielectric screening, and lays fundamental physics for gate-tunable nano-electronics and nano-plasmonics.
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Submitted 2 October, 2021;
originally announced October 2021.
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Structured electrode additive manufacturing for lithium-ion batteries
Authors:
Soyeon Park,
Kaiyue Deng,
Baohui Shi,
Yuanyuan Shang,
Kun,
Fu
Abstract:
A thick electrode with high areal capacity has been developed as a strategy for high-energy-density lithium-ion batteries, but thick electrodes have difficulties in manufacturing and limitations in ion transport. Here, we reported a new manufacturing approach for ultra-thick electrode with aligned structure, called structure electrode additive manufacturing or SEAM, which aligns active materials t…
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A thick electrode with high areal capacity has been developed as a strategy for high-energy-density lithium-ion batteries, but thick electrodes have difficulties in manufacturing and limitations in ion transport. Here, we reported a new manufacturing approach for ultra-thick electrode with aligned structure, called structure electrode additive manufacturing or SEAM, which aligns active materials to the through-thicknesses direction of electrodes using shear flow and a designed printing path. The ultra-thick electrodes with high loading of active materials, low tortuous structure, and good structure stability resulting from a simple and scalable SEAM lead to rapid ion transport and fast electrolyte infusion, delivering a higher areal capacity than slurry-casted thick electrodes. SEAM shows strengths in design flexibility and scalability, which allows the production of practical high energy/power density structure electrodes.
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Submitted 9 September, 2021;
originally announced September 2021.
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Non-Hermitian skin effect in magnetic systems
Authors:
Kuangyin Deng,
Benedetta Flebus
Abstract:
Far from being limited to a trivial generalization of their Hermitian counterparts, non-Hermitian topological phases have gained widespread interest due to their unique properties. One of the most striking non-Hermitian phenomena is the skin effect, i.e., the localization of a macroscopic fraction of bulk eigenstates at a boundary, which underlies the breakdown of the bulk-edge correspondence. Her…
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Far from being limited to a trivial generalization of their Hermitian counterparts, non-Hermitian topological phases have gained widespread interest due to their unique properties. One of the most striking non-Hermitian phenomena is the skin effect, i.e., the localization of a macroscopic fraction of bulk eigenstates at a boundary, which underlies the breakdown of the bulk-edge correspondence. Here we investigate the emergence of the skin effect in magnetic insulating systems by developing a phenomenological approach to describing magnetic dissipation within a lattice model. Focusing on a spin-orbit-coupled van der Waals (vdW) ferromagnet with spin-nonconserving magnon-phonon interactions, we find that the magnetic skin effect emerges in an appropriate temperature regime. Our results suggest that the interference between Dzyaloshinskii-Moriya interaction (DMI) and nonlocal magnetic dissipation plays a key role in the accumulation of bulk states at the boundaries.
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Submitted 1 May, 2022; v1 submitted 3 September, 2021;
originally announced September 2021.
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Multiple Symmetry-Protected Dirac Nodal Lines in A Quasi-One-Dimensional Semimetal
Authors:
Zhanyang Hao,
Weizhao Chen,
Yuan Wang,
Jiayu Li,
Xiao-Ming Ma,
Yu-Jie Hao,
Ruie Lu,
Zecheng Shen,
Zhicheng Jiang,
Wanling Liu,
Qi Jiang,
Xiao Lei,
Le Wang,
Ying Fu,
Liang Zhou,
Lianglong Huang,
Zhengtai Liu,
Mao Ye,
Dawei Shen,
Jiawei Mei,
Hongtao He,
Cai Liu,
Ke Deng,
Chang Liu,
Qihang Liu
, et al. (1 additional authors not shown)
Abstract:
Nodal-line semimetals (NLSMs) contains Dirac/Weyl type band-crossing nodes extending into shapes of line, loop and chain in the reciprocal space, leading to novel band topology and transport responses. Robust NLSMs against spin-orbit coupling typically occur in three-dimensional materials with more symmetry operations to protect the line nodes of band crossing, while the possibilities in lower-dim…
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Nodal-line semimetals (NLSMs) contains Dirac/Weyl type band-crossing nodes extending into shapes of line, loop and chain in the reciprocal space, leading to novel band topology and transport responses. Robust NLSMs against spin-orbit coupling typically occur in three-dimensional materials with more symmetry operations to protect the line nodes of band crossing, while the possibilities in lower-dimensional materials are rarely discussed. Here we demonstrate robust NLSM phase in a quasi-one-dimensional nonmagnetic semimetal TaNiTe5. Combining angle-resolved photoemission spectroscopy measurements and first-principles calculations, we reveal how reduced dimension can interact with nonsymmorphic symmetry and result into multiple Dirac-type nodal lines with four-fold degeneracy. Our findings suggest rich physics and application in (quasi-)one-dimensional topological materials and call for further investigation on the interplay between the quantum confinement and nontrivial band topology.
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Submitted 5 April, 2021;
originally announced April 2021.
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Exploring self-consistency of the equations of axion electrodynamics in Weyl semimetals
Authors:
Kuangyin Deng,
John S. Van Dyke,
Djordje Minic,
J. J. Heremans,
Edwin Barnes
Abstract:
Recent works have provided evidence that an axial anomaly can arise in Weyl semimetals. If this is the case, then the electromagnetic response of Weyl semimetals should be governed by the equations of axion electrodynamics. These equations capture both the chiral magnetic and anomalous Hall effects in the limit of linear response, while at higher orders their solutions can provide detectable elect…
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Recent works have provided evidence that an axial anomaly can arise in Weyl semimetals. If this is the case, then the electromagnetic response of Weyl semimetals should be governed by the equations of axion electrodynamics. These equations capture both the chiral magnetic and anomalous Hall effects in the limit of linear response, while at higher orders their solutions can provide detectable electromagnetic signatures of the anomaly. In this work, we consider three versions of axion electrodynamics that have been proposed in the Weyl semimetal literature. These versions differ in the form of the chiral magnetic term and in whether or not the axion is treated as a dynamical field. In each case, we look for solutions to these equations for simple sample geometries subject to applied external fields. We find that in the case of a linear chiral magnetic term generated by a non-dynamical axion, self-consistent solutions can generally be obtained. In this case, the magnetic field inside of the Weyl semimetal can be magnified significantly, providing a testable signature for experiments. Self-consistent solutions can also be obtained for dynamical axions, but only in cases where the chiral magnetic term vanishes identically. Finally, for a nonlinear form of the chiral magnetic term frequently considered in the literature, we find that there are no self-consistent solutions aside from a few special cases.
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Submitted 9 August, 2021; v1 submitted 6 March, 2021;
originally announced March 2021.
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Half-Magnetic Topological Insulator
Authors:
Ruie Lu,
Hongyi Sun,
Shiv Kumar,
Yuan Wang,
Mingqiang Gu,
Meng Zeng,
Yu-Jie Hao,
Jiayu Li,
Jifeng Shao,
Xiao-Ming Ma,
Zhanyang Hao,
Ke Zhang,
Wumiti Mansuer,
Jiawei Mei,
Yue Zhao,
Cai Liu,
Ke Deng,
Wen Huang,
Bing Shen,
Kenya Shimada,
Eike F. Schwier,
Chang Liu,
Qihang Liu,
Chaoyu Chen
Abstract:
Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi…
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Topological magnets are a new family of quantum materials providing great potential to realize emergent phenomena, such as quantum anomalous Hall effect and axion-insulator state. Here we present our discovery that stoichiometric ferromagnet MnBi8Te13 with natural heterostructure MnBi2Te4-(Bi2Te3)3 is an unprecedented half-magnetic topological insulator, with the magnetization existing at the MnBi2Te4 surface but not at the opposite surface terminated by triple Bi2Te3 layers. Our angle-resolved photoemission spectroscopy measurements unveil a massive Dirac gap at the MnBi2Te4 surface, and gapless Dirac cone on the other side. Remarkably, the Dirac gap (~28 meV) at MnBi2Te4 surface decreases monotonically with increasing temperature and closes right at the Curie temperature, thereby representing the first smoking-gun spectroscopic evidence of magnetization-induced topological surface gap among all known magnetic topological materials. We further demonstrate theoretically that the half-magnetic topological insulator is desirable to realize the half-quantized surface anomalous Hall effect, which serves as a direct proof of the general concept of axion electrodynamics in condensed matter systems.
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Submitted 9 September, 2020;
originally announced September 2020.
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Transition between half-metal and ferromagnetic semiconductor induced by silicon vacancy in epitaxial silicene
Authors:
Yan Qian,
Erjun Kan,
Kaiming Deng,
Haiping Wu
Abstract:
Since the inevitability in experimental synthesis, defects show great importance to many materials. They will deeply regulate the properties of the materials, and then affect the further applications. Thus, exploring the effects of defects on the properties of materials is desired. Here, by using first-principles calculations, we systematically studied the effect of silicon vacancy defects on the…
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Since the inevitability in experimental synthesis, defects show great importance to many materials. They will deeply regulate the properties of the materials, and then affect the further applications. Thus, exploring the effects of defects on the properties of materials is desired. Here, by using first-principles calculations, we systematically studied the effect of silicon vacancy defects on the properties of silicene generated on Nterminated cubic boron nitride (111) surface. It is found that the introduction of silicon vacancy would trigger transition between half-metal and ferromagnetic semiconductor. With small vacancy ratios of 1/36 and 1/24, the ground-state of the samples would behave as ferromagnetic semiconductors, and the band gaps are about 1.25 and 0.95 eV, respectively. When the vacancy ratio is increased up to 1/6, the sample would turn into a ferromagnetic half-metal with a half-metallic gap of around 0.15 eV. The change of the electronic structure of the samples is driven by the different electron transfer between silicon layer and substrate, i.e., there will be different amount of electrons transferred from the silicon layer to the substrate when the vacancy ratio is altered. This work would open a new way to regulate the properties of materials and extend applications in nanoelectronic field.
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Submitted 3 July, 2020;
originally announced July 2020.
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Moderate bandgap and high carrier mobility simultaneously realized in bilayer silicene by oxidation
Authors:
Yan Qian,
Erjun Kan,
Kaiming Deng,
Haiping Wu
Abstract:
Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semiconducting materials can match well with the previous silicon based electronic components. Thus, searching for such Si-based semiconductors has been one hot project due to the lack of them nowadays. Here, with the help of den…
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Semiconductors simultaneously possessing high carrier mobility, moderate bandgap, and ambient environment stability are so important for the modern industry, and Si-based semiconducting materials can match well with the previous silicon based electronic components. Thus, searching for such Si-based semiconductors has been one hot project due to the lack of them nowadays. Here, with the help of density functional theory, we found that the oxidized bilayer silicene exhibits high carrier mobility with a moderate direct bandgap of 1.02 eV. The high carrier mobility is caused by the remaining of big pi bond, and the moderate bandgap is opened by the saturation of dangling Si 3p bonds. Originated from the formation of strong Si-O and Si-Si bonds, the sample exhibits strong thermodynamic and dynamical stabilities. Our work indicates that the oxidized bilayer silicene has many potential applications in modern electronic fields.
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Submitted 15 May, 2020;
originally announced May 2020.
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Spectroscopic realization of large surface gap in a doped magnetic topological insulator
Authors:
Xiao-Ming Ma,
Yufei Zhao,
Ke Zhang,
Rui'e Lu,
Jiayu Li,
Qiushi Yao,
Jifeng Shao,
Xuefeng Wu,
Meng Zeng,
Yu-Jie Hao,
Shiv Kumar,
Zhanyang Hao,
Yuan Wang,
Xiang-Rui Liu,
Huiwen Shen,
Hongyi Sun,
Jiawei Mei,
Koji Miyamoto,
Taichi Okuda,
Masashi Arita,
Eike F. Schwier,
Kenya Shimada,
Ke Deng,
Cai Liu,
Yue Zhao
, et al. (3 additional authors not shown)
Abstract:
Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulato…
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Realization of the quantum anomalous Hall effect and axion electrodynamics in topological materials are among the paradigmatic phenomena in condensed matter physics. Recently, signatures of both phases are observed to exist in thin films of MnBi$_2$Te$_4$, a stoichiometric antiferromagnetic topological insulator. Direct evidence of the bulk topological magnetoelectric response in an axion insulator requires an energy gap at its topological surface state (TSS). However, independent spectroscopic experiments revealed that such a surface gap is absent, or much smaller than previously thought, in MnBi$_2$Te$_4$. Here, we utilize angle resolved photoemission spectroscopy and density functional theory calculations to demonstrate that a sizable TSS gap unexpectedly exists in Sb-doped MnBi$_2$Te$_4$. This gap is found to be topologically nontrivial, insensitive to the bulk antiferromagnetic-paramagnetic transition, while enlarges along with increasing Sb concentration. Our work shows that Mn(Bi$_{1-x}$Sb$_x$)$_2$Te$_4$ is a potential platform to observe the key features of the high-temperature axion insulator state, such as the topological magnetoelectric responses and half-integer quantum Hall effects.
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Submitted 20 April, 2020;
originally announced April 2020.
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Nonlinear localized excitations in a topological ferromagnetic honeycomb lattice
Authors:
Wenhui Feng,
Bing Tang,
Lanjun Wu,
Peng Kong,
Chao Yang,
Lei Wang,
Ke Deng
Abstract:
We theoretically investigate nonlinear localized excitations in a Heisenberg honeycomb ferromagnet with a second neighbour Dzialozinskii-Moriya interaction, which has been proved to possess the topological band structure. Using the time-dependent variational principle, we obtain the equation of motion for the system in the Glauber coherent-state representation. By means of the semidiscrete multipl…
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We theoretically investigate nonlinear localized excitations in a Heisenberg honeycomb ferromagnet with a second neighbour Dzialozinskii-Moriya interaction, which has been proved to possess the topological band structure. Using the time-dependent variational principle, we obtain the equation of motion for the system in the Glauber coherent-state representation. By means of the semidiscrete multiple-scale method, different types of nonlinear localized excitations are gotten.Our results show that both two-dimensional discrete breathers and bulk gap solitons may occur in the Heisenberg honeycomb ferromagnet.
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Submitted 27 May, 2021; v1 submitted 31 March, 2020;
originally announced March 2020.
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Interplay of exchange and superexchange in triple quantum dots
Authors:
Kuangyin Deng,
Edwin Barnes
Abstract:
Recent experiments on semiconductor quantum dots have demonstrated the ability to utilize a large quantum dot to mediate superexchange interactions and generate entanglement between distant spins. This opens up a possible mechanism for selectively coupling pairs of remote spins in a larger network of quantum dots. Taking advantage of this opportunity requires a deeper understanding of how to contr…
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Recent experiments on semiconductor quantum dots have demonstrated the ability to utilize a large quantum dot to mediate superexchange interactions and generate entanglement between distant spins. This opens up a possible mechanism for selectively coupling pairs of remote spins in a larger network of quantum dots. Taking advantage of this opportunity requires a deeper understanding of how to control superexchange interactions in these systems. Here, we consider a triple-dot system arranged in linear and triangular geometries. We use configuration interaction calculations to investigate the interplay of superexchange and nearest-neighbor exchange interactions as the location, detuning, and electron number of the mediating dot are varied. We show that superexchange processes strongly enhance and increase the range of the net spin-spin exchange as the dots approach a linear configuration. Furthermore, we show that the strength of the exchange interaction depends sensitively on the number of electrons in the mediator. Our results can be used as a guide to assist further experimental efforts towards scaling up to larger, two-dimensional quantum dot arrays.
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Submitted 6 March, 2020;
originally announced March 2020.
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Coherent multi-spin exchange coupling in a quantum-dot spin chain
Authors:
Haifeng Qiao,
Yadav P. Kandel,
Kuangyin Deng,
Saeed Fallahi,
Geoffrey C. Gardner,
Michael J. Manfra,
Edwin Barnes,
John M. Nichol
Abstract:
Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange cou…
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Heisenberg exchange coupling between neighboring electron spins in semiconductor quantum dots provides a powerful tool for quantum information processing and simulation. Although so far unrealized, extended Heisenberg spin chains can enable long-distance quantum information transfer and the generation of non-equilibrium quantum states. In this work, we implement simultaneous, coherent exchange coupling between all nearest-neighbor pairs of spins in a quadruple quantum dot. The main challenge in implementing simultaneous exchange couplings is the nonlinear and nonlocal dependence of the exchange couplings on gate voltages. Through a combination of electrostatic simulation and theoretical modeling, we show that this challenge arises primarily due to lateral shifts of the quantum dots during gate pulses. Building on this insight, we develop two models, which can be used to predict the confinement gate voltages for a desired set of exchange couplings. Although the model parameters depend on the number of exchange couplings desired (suggesting that effects in addition to lateral wavefunction shifts are important), the models are sufficient to enable simultaneous and independent control of all three exchange couplings in a quadruple quantum dot. We demonstrate two-, three-, and four-spin exchange oscillations, and our data agree with simulations.
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Submitted 8 July, 2020; v1 submitted 7 January, 2020;
originally announced January 2020.
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Hybridization-Induced Gapped and Gapless States on the Surfaces of Magnetic Topological Insulators
Authors:
Xiao-Ming Ma,
Zhongjia Chen,
Eike F. Schwier,
Yang Zhang,
Yu-Jie Hao,
Rui'e Lu,
Jifeng Shao,
Yuanjun Jin,
Meng Zeng,
Xiang-Rui Liu,
Zhanyang Hao,
Ke Zhang,
Wumiti Mansuer,
Shiv Kumar,
Chunyao Song,
Yuan Wang,
Boyan Zhao,
Cai Liu,
Ke Deng,
Jiawei Mei,
Kenya Shimada,
Yue Zhao,
Xingjiang Zhou,
Bing Shen,
Wen Huang
, et al. (3 additional authors not shown)
Abstract:
The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have re…
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The layered MnBi2nTe3n+1 family represents the first intrinsic antiferromagnetic topological insulator (AFM TI, protected by a combination symmetry ) ever discovered, providing an ideal platform to explore novel physics such as quantum anomalous Hall effect at elevated temperature and axion electrodynamics. Recent angle-resolved photoemission spectroscopy (ARPES) experiments on this family have revealed that all terminations exhibit (nearly) gapless topological surface states (TSSs) within the AFM state, violating the definition of the AFM TI, as the surfaces being studied should be -breaking and opening a gap. Here we explain this curious paradox using a surface-bulk band hybridization picture. Combining ARPES and first-principles calculations, we prove that only an apparent gap is opened by hybridization between TSSs and bulk bands. The observed (nearly) gapless features are consistently reproduced by tight-binding simulations where TSSs are coupled to a Rashba-split bulk band. The Dirac-cone-like spectral features are actually of bulk origin, thus not sensitive to the-breaking at the AFM surfaces. This picture explains the (nearly) gapless behaviour found in both Bi2Te3- and MnBi2Te4-terminated surfaces and is applicable to all terminations of MnBi2nTe3n+1 family. Our findings highlight the role of band hybridization, superior to magnetism in this case, in shaping the general surface band structure in magnetic topological materials for the first time.
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Submitted 31 December, 2019;
originally announced December 2019.
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In-plane antiferromagnetic moments in axion topological insulator candidate EuIn$_2$As$_2$
Authors:
Yang Zhang,
Ke Deng,
Xiao Zhang,
Meng Wang,
Yuan Wang,
Cai Liu,
Jia-Wei Mei,
Shiv Kumar,
Eike F. Schwier,
Kenya Shimada,
Chaoyu Chen,
Bing Shen
Abstract:
Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields appli…
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Topological insulator with antiferromagnetic order can serve as an ideal platform for the realization of axion electrodynamics. In this paper, we report a systematic study of the axion topological insulator candidate EuIn$_2$As$_2$. A linear energy dispersion across the Fermi level confirms the existence of the proposed hole-type Fermi pocket. Spin-flop transitions occur with magnetic fields applied within the $ab$-plane while are absent for fields parallel to the $c$-axis. Anisotropic magnetic phase diagrams are observed and the orientation of the ground magnetic moment is found to be within the $ab$-plane. The magnetoresistivity for EuIn$_2$As$_2$ behaves non-monotonic as a function of field strength. It exhibits angular dependent evolving due to field-driven and temperature-driven magnetic states. These results indicate that the magnetic states of EuIn$_2$As$_2$ strongly affect the transport properties as well as the topological nature.
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Submitted 5 November, 2019;
originally announced November 2019.
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Type-III Weyl Semimetals: (TaSe4)2I
Authors:
Xiao-Ping Li,
Ke Deng,
Botao Fu,
YongKai Li,
DaShuai Ma,
JunFeng Han,
Jianhui Zhou,
Shuyun Zhou,
Yugui Yao
Abstract:
Weyl semimetals have been classified into type-I and type-II with respect to the geometry of their Fermi surfaces at the Weyl points. Here, we propose a new class of Weyl semimetal, whose unique Fermi surface contains two electron or two hole pockets touching at a multi-Weyl point, dubbed as type-III Weyl semimetal. Based on first-principles calculations, we first show that quasi-one-dimensional c…
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Weyl semimetals have been classified into type-I and type-II with respect to the geometry of their Fermi surfaces at the Weyl points. Here, we propose a new class of Weyl semimetal, whose unique Fermi surface contains two electron or two hole pockets touching at a multi-Weyl point, dubbed as type-III Weyl semimetal. Based on first-principles calculations, we first show that quasi-one-dimensional compound (TaSe4)2I is a type-III Weyl semimetal with larger chiral charges. (TaSe4)2I can support four-fold helicoidal surface states with remarkably long Fermi arcs on the (001) surface. Angle-resolved photoemission spectroscopy measurements are in agreement with the gapless nature of (TaSe4)2I at room temperature and reveal its characteristic dispersion. In addition, our calculations show that external strain could induce topological phase transitions in (TaSe4)2I among the type-III, type-II, and type-I Weyl semimetals, accompanied with the Lifshitz transitions of the Fermi surfaces. Therefore, our work first experimentally indicates (TaSe4)2I as a type-III Weyl semimetal and provides a promising platform to further investigate the novel physics of type-III Weyl fermions.
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Submitted 29 January, 2021; v1 submitted 26 September, 2019;
originally announced September 2019.
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Bound state and non-Markovian dynamics of a quantum emitter around a surface plasmonic nanostructure
Authors:
Sha-Sha Wen,
Yong-Gang Huang,
Xiao-Yun Wang,
Jie Liu,
Yun Li,
Ke Deng,
Xiu-E Quan,
Hong Yang,
Jin-Zhang Peng,
He-Ping Zhao
Abstract:
A bound state between a quantum emitter (QE) and surface plasmon polaritons (SPPs) can be formed, where the QE is partially stabilized in its excited state. We put forward a general approach for calculating the energy level shift at a negative frequency $ω$, which is just the negative of the nonresonant part for the energy level shift at positive frequency $-ω$. We also propose an efficient formal…
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A bound state between a quantum emitter (QE) and surface plasmon polaritons (SPPs) can be formed, where the QE is partially stabilized in its excited state. We put forward a general approach for calculating the energy level shift at a negative frequency $ω$, which is just the negative of the nonresonant part for the energy level shift at positive frequency $-ω$. We also propose an efficient formalism for obtaining the long-time value of the excited-state population without calculating the eigenfrequency of the bound state or performing a time evolution of the system, in which the probability amplitude for the excited state in the steady limit is equal to one minus the integral of the evolution spectrum over the positive frequency range. With the above two quantities obtained, we show that the non-Markovian decay dynamics in the presence of a bound state can be obtained by the method based on the Green's function expression for the evolution operator. A general criterion for identifying the existence of a bound state is presented. These are numerically demonstrated for a QE located around a nanosphere and in a gap plasmonic nanocavity. These findings are instructive in the fields of coherent light-matter interactions.
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Submitted 8 August, 2019;
originally announced August 2019.
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Crossover from 2D metal to 3D Dirac semimetal in metallic PtTe2 films with local Rashba effect
Authors:
Ke Deng,
Mingzhe Yan,
Chu-Ping Yu,
Jiaheng Li,
Xue Zhou,
Kenan Zhang,
Yuxin Zhao,
Koji Miyamoto,
Taichi Okuda,
Wenhui Duan,
Yang Wu,
Xiaoyan Zhong,
Shuyun Zhou
Abstract:
PtTe2 and PtSe2 with trigonal structure have attracted extensive research interests since the discovery of type-II Dirac fermions in the bulk crystals. The evolution of the electronic structure from bulk 3D topological semimetal to 2D atomic thin films is an important scientific question. While a transition from 3D type-II Dirac semimetal in the bulk to 2D semiconductor in monolayer (ML) film has…
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PtTe2 and PtSe2 with trigonal structure have attracted extensive research interests since the discovery of type-II Dirac fermions in the bulk crystals. The evolution of the electronic structure from bulk 3D topological semimetal to 2D atomic thin films is an important scientific question. While a transition from 3D type-II Dirac semimetal in the bulk to 2D semiconductor in monolayer (ML) film has been reported for PtSe2, so far the evolution of electronic structure of atomically thin PtTe2 films still remains unexplored. Here we report a systematic angle-resolved photoemission spectroscopy (ARPES) study of the electronic structure of high quality PtTe2 films grown by molecular beam epitaxy with thickness from 2 ML to 6 ML. ARPES measurements show that PtTe2 films still remain metallic even down to 2 ML thickness, which is in sharp contrast to the semiconducting property of few layer PtSe2 film. Moreover, a transition from 2D metal to 3D type-II Dirac semimetal occurs at film thickness of 4-6 ML. In addition, Spin-ARPES measurements reveal helical spin textures induced by local Rashba effect in the bulk PtTe2 crystal, suggesting that similar hidden spin is also expected in few monolayer PtTe2 films. Our work reveals the transition from 2D metal to 3D topological semimetal and provides new opportunities for investigating metallic 2D films with local Rashba effect.
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Submitted 14 June, 2019; v1 submitted 15 May, 2019;
originally announced May 2019.
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Substrate-induced half-metallic property in epitaxial silicene
Authors:
Yan Qian,
Erjun Kan,
Kaiming Deng,
Haiping Wu
Abstract:
For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads to wrinkles, damages, contaminations and so on which would destroy the intrinsic properties of samples. Thus, generating two-dimensional materials directly on n…
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For most practical applications in electronic devices, two-dimensional materials should be transferred onto semiconducting or insulating substrates, since they are usually generated on metallic substrates. However, the transfer often leads to wrinkles, damages, contaminations and so on which would destroy the intrinsic properties of samples. Thus, generating two-dimensional materials directly on nonmetallic substrates has been a desirable goal for a long time. Here, via a swarm structure search method and density functional theory, we employed an insulating N-terminated cubic boron nitride(111) surface as a substrate for the generation of silicene. The result shows that the silicene behaves as a ferromagnetic half-metal because of the strong interaction between silicon and surface nitrogen atoms. The magnetic moments are mainly located on surface nitrogen sites without bonding silicon atoms and the value is about 0.12 uB. In spin-up channel, it behaves as a direct band gap semiconductor with a gap of around 1.35 eV, while it exhibits metallic characteristic in spin-down channel, and the half-metallic band gap is about 0.11 eV. Besides, both the magnetic and electronic properties are not sensitive to the external compressive strain. This work maybe open a way for the utility of silicene in spintronic field.
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Submitted 20 March, 2019; v1 submitted 7 March, 2019;
originally announced March 2019.
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Experimental Progress on Layered Topological Semimetals
Authors:
Junchao Ma,
Ke Deng,
Lu Zheng,
Sanfeng Wu,
Zheng Liu,
Shuyun Zhou,
Dong Sun
Abstract:
We review recent experimental progresses on layered topological materials, mainly focusing on transitional metal dichalcogenides with various lattice types including 1T, Td and 1T' structural phases. Their electronic quantum states are interestingly rich, and many appear to be topological nontrivial, such as Dirac/Weyl semimetallic phase in multilayers and quantum spin hall insulator phase in mono…
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We review recent experimental progresses on layered topological materials, mainly focusing on transitional metal dichalcogenides with various lattice types including 1T, Td and 1T' structural phases. Their electronic quantum states are interestingly rich, and many appear to be topological nontrivial, such as Dirac/Weyl semimetallic phase in multilayers and quantum spin hall insulator phase in monolayers. The content covers recent major advances from material synthesis, basic characterizations, angle-resolved photoemission spectroscopy measurements, transport and optical responses. Following those, we outlook the exciting future possibilities enabled by the marriage of topological physics and two dimensional van der Waals layered heterostructures.
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Submitted 18 February, 2019;
originally announced February 2019.
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A protonated brownmillerite electrolyte for superior low-temperature proton conductivity
Authors:
Nianpeng Lu,
Yujia Wang,
Shuang Qiao,
Hao-Bo Li,
Qing He,
Zhuolu Li,
Meng Wang,
Jingzhao Zhang,
Sze Chun Tsang,
Jingwen Guo,
Shuzhen Yang,
Jianbing Zhang,
Ke Deng,
Ding Zhang,
Jing Ma,
Yang Wu,
Junyi Zhu,
Yoshinori Tokura,
Ce-Wen Nan,
Jian Wu,
Pu Yu
Abstract:
Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature du…
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Design novel solid oxide electrolyte with enhanced ionic conductivity forms one of the Holy Grails in the field of materials science due to its great potential for wide range of energy applications. Conventional solid oxide electrolyte typically requires elevated temperature to activate the ionic transportation, while it has been increasing research interests to reduce the operating temperature due to the associated scientific and technological importance. Here, we report a conceptually new solid oxide electrolyte, HSrCoO2.5, which shows an exceptional enhanced proton conductivity at low temperature region (from room temperature to 140 oC). Combining both the experimental results and corresponding first-principles calculations, we attribute these intriguing properties to the extremely-high proton concentration as well as the well-ordered oxygen vacancy channels inherited from the novel crystalline structure of HSrCoO2.5. This result provides a new strategy to design novel solid oxide electrolyte with excellent proton conductivity for wide ranges of energy-related applications.
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Submitted 26 November, 2018;
originally announced November 2018.
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Evidence for quasi-one-dimensional charge density wave in CuTe by angle-resolved photoemission spectroscopy
Authors:
Kenan Zhang,
Xiaoyu Liu,
Haoxiong Zhang,
Ke Deng,
Mingzhe Yan,
Wei Yao,
Mingtian Zheng,
Eike F. Schwier,
Kenya Shimada,
Jonathan D. Denlinger,
Yang Wu,
Wenhui Duan,
Shuyun Zhou
Abstract:
We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ p…
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We report the electronic structure of CuTe with a high charge density wave (CDW) transition temperature Tc = 335 K by angle-resolved photoemission spectroscopy (ARPES). An anisotropic charge density wave gap with a maximum value of 190 meV is observed in the quasi-one-dimensional band formed by Te px orbitals. The CDW gap can be filled by increasing temperature or electron doping through in situ potassium deposition. Combining the experimental results with calculated electron scattering susceptibility and phonon dispersion, we suggest that both Fermi surface nesting and electron-phonon coupling play important roles in the emergence of the CDW.
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Submitted 28 November, 2018; v1 submitted 18 October, 2018;
originally announced October 2018.
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Widely tunable band gap in a multivalley semiconductor SnSe by potassium doping
Authors:
Kenan Zhang,
Ke Deng,
Jiaheng Li,
Haoxiong Zhang,
Wei Yao,
Jonathan Denlinger,
Yang Wu,
Wenhui Duan,
Shuyun Zhou
Abstract:
SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properti…
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SnSe, a group IV-VI monochalcogenide with layered crystal structure similar to black phosphorus, has recently attracted extensive interests due to its excellent thermoelectric properties and potential device applications. Experimental electronic structure of both the valence and conduction bands is critical for understanding the effects of hole versus electron doping on the thermoelectric properties, and to further reveal possible change of the band gap upon doping. Here, we report the multivalley valence bands with a large effective mass on semiconducting SnSe crystals and reveal single-valley conduction bands through electron doping to provide a complete picture of the thermoelectric physics. Moreover, by electron doping through potassium deposition, the band gap of SnSe can be widely tuned from 1.2 eV to 0.4 eV, providing new opportunities for tunable electronic and optoelectronic devices.
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Submitted 29 May, 2018;
originally announced May 2018.
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Discovery of Intrinsic Ferromagnetic Ferroelectricity in Transition Metal Halides Monolayer
Authors:
Chengxi Huang,
Yongping Du,
Haiping Wu,
Hongjun Xiang,
Kaiming Deng,
Erjun Kan
Abstract:
The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multi-state data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnet…
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The realization of multiferroics in nanostructures, combined with a large electric dipole and ferromagnetic ordering, could lead to new applications, such as high-density multi-state data storage. Although multiferroics have been broadly studied for decades, ferromagnetic ferroelectricity is rarely explored, especially in two-dimensional (2D) systems. Here we report the discovery of 2D ferromagnetic ferroelectricity in layered transition metal halide systems. On the basis of first-principles calculations, we reveal that charged CrBr3 monolayer exhibits in-plane multiferroicity, which is ensured by the combination of orbital and charge ordering as realized by the asymmetric Jahn-Teller distortions of octahedral Cr-Br6 units. As an example, we further show that (CrBr3)2Li is a ferromagnetic ferroelectric multiferroic. The explored phenomena and mechanism of multiferroics in this 2D system are not only useful for fundamental research in multiferroics but also enable a wide range of applications in nano-devices.
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Submitted 25 February, 2018;
originally announced February 2018.
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Negative exchange interactions in coupled few-electron quantum dots
Authors:
Kuangyin Deng,
F. A. Calderon-Vargas,
Nicholas J. Mayhall,
Edwin Barnes
Abstract:
It has been experimentally shown that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin triplet-like rather than singlet-like ground state. Here, we sho…
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It has been experimentally shown that negative exchange interactions can arise in a linear three-dot system when a two-electron double quantum dot is exchange coupled to a larger quantum dot containing on the order of one hundred electrons. The origin of this negative exchange can be traced to the larger quantum dot exhibiting a spin triplet-like rather than singlet-like ground state. Here, we show using a microscopic model based on the configuration interaction (CI) method that both triplet-like and singlet-like ground states are realized depending on the number of electrons. In the case of only four electrons, a full CI calculation reveals that triplet-like ground states occur for sufficiently large dots. These results hold for symmetric and asymmetric quantum dots in both Si and GaAs, showing that negative exchange interactions are robust in few-electron double quantum dots and do not require large numbers of electrons.
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Submitted 4 June, 2018; v1 submitted 15 December, 2017;
originally announced December 2017.
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Semimetallic single atomic layer silicon allotrope with Dirac fermions
Authors:
Haiping Wu,
Yan Qian,
Zhengwei Du,
Renzhu Zhu,
Erjun Kan,
Kaiming Deng
Abstract:
Materials with Dirac point are so amazing since the charge carriers are massless and have an effective speed of light. Among the reported two-dimensional silicon allotropes, no one showing such exciting nature was proved experimentally. This fact motivates us to search for other such two-dimensional silicon allotropes. As a result, a new single atomic layer thin silicon allotrope was predicted by…
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Materials with Dirac point are so amazing since the charge carriers are massless and have an effective speed of light. Among the reported two-dimensional silicon allotropes, no one showing such exciting nature was proved experimentally. This fact motivates us to search for other such two-dimensional silicon allotropes. As a result, a new single atomic layer thin silicon allotrope was predicted by employing CALYPSO code in this work. This silicon allotrope is composed of eight- membered rings linked by Si-Si bonds and presents buckling formation. Expectedly, the electronic calculation reveals that there exists Dirac point at Fermi energy level. Furthermore, the ab initio molecular dynamics simulations displays that the original atomic configuration can be remained even at an extremely high temperature of 1000 K. We hope this work can expand the family of single atomic layer thin silicon allotropes with Dirac fermions.
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Submitted 28 April, 2017;
originally announced May 2017.
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Large-Area Two-Dimensional Layered MoTe$_2$ by Physical Vapor Deposition and Solid-Phase Crystallization in a Tellurium-Free Atmosphere
Authors:
Jyun-Hong Huang,
Kuang-Ying Deng,
Pang-Shiuan Liu,
Chien-Ting Wu,
Cheng-Tung Chou,
Wen-Hao Chang,
Yao-Jen Lee,
Tuo-Hung Hou
Abstract:
Molybdenum ditelluride (MoTe$_2$) has attracted considerable interest for nanoelectronic, optoelectronic, spintronic, and valleytronic applications because of its modest band gap, high field-effect mobility, large spin-orbit-coupling splitting, and tunable 1T'/2H phases. However, synthesizing large-area, high-quality MoTe$_2$ remains challenging. The complicated design of gas-phase reactant transp…
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Molybdenum ditelluride (MoTe$_2$) has attracted considerable interest for nanoelectronic, optoelectronic, spintronic, and valleytronic applications because of its modest band gap, high field-effect mobility, large spin-orbit-coupling splitting, and tunable 1T'/2H phases. However, synthesizing large-area, high-quality MoTe$_2$ remains challenging. The complicated design of gas-phase reactant transport and reaction for chemical vapor deposition or tellurization is nontrivial because of the weak bonding energy between Mo and Te. Here, we report a new method for depositing MoTe$_2$ that entails using physical vapor deposition followed by a post-annealing process in a Te-free atmosphere. Both Mo and Te were physically deposited onto the substrate by sputtering a MoTe$_2$ target. A composite SiO$_2$ capping layer was designed to prevent Te sublimation during the post-annealing process. The post-annealing process facilitated 1T'-to-2H phase transition and solid-phase crystallization, leading to the formation of high-crystallinity few-layer 2H-MoTe$_2$ with a field-effect mobility of ~10 cm$^2$/(V-s), the highest among all nonexfoliated 2H-MoTe$_2$ currently reported. Furthermore, 2H-MoS$_2$ and Td-WTe$_2$ can be deposited using similar methods. Requiring no transfer or chemical reaction of metal and chalcogen reactants in the gas phase, the proposed method is potentially a general yet simple approach for depositing a wide variety of large-area, high-quality, two-dimensional layered structures.
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Submitted 21 April, 2017;
originally announced April 2017.
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Atomically thin mononitrides SiN and GeN: new two-dimensional semiconducting materials
Authors:
Yan Qian,
Zhengwei Du,
Renzhu Zhu,
Haiping Wu,
Erjun Kan,
Kaiming Deng
Abstract:
Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Owing to the lack of such materials, many researchers put their efforts into this field. In this work, employing a swarm structure search method and density functional theory, we theoretically predict two-dimensional atomi…
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Low-dimensional Si-based semiconductors are unique materials that can both match well with the Si-based electronics and satisfy the demand of miniaturization in modern industry. Owing to the lack of such materials, many researchers put their efforts into this field. In this work, employing a swarm structure search method and density functional theory, we theoretically predict two-dimensional atomically thin mononitrides SiN and GeN, both of which present semiconducting nature. Furthermore study shows that SiN and GeN behave as indirect band gap semiconductors with the gap of 1.75 and 1.20 eV, respectively. The ab initio molecular dynamics calculation tells that both two mononitrides can exist stably even at extremely high temperature of 2000 K. Notably, electron mobilities are evaluated as 0.888x$10^3$ $cm^2V^{-1}s^{-1}$ and 0.413x$10^3$ $cm^2V^{-1}s^{-1}$ for SiN and GeN, respectively. The present work expands the family of low-dimensional Si-based semiconductors.
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Submitted 31 March, 2017;
originally announced March 2017.
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Graphene-like quaternary compound SiBCN: a new wide direct band gap semiconductor predicted by a first-principles study
Authors:
Yan Qian,
Haiping Wu,
Erjun Kan,
Kaiming Deng
Abstract:
Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based semiconductors is highly desired. With the combination of a swarm structure search method and density functional theory in this work, a quaternary compound…
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Due to the lack of two-dimensional silicon-based semiconductors and the fact that most of the components and devices are generated on single-crystal silicon or silicon-based substrates in modern industry, designing two-dimensional silicon-based semiconductors is highly desired. With the combination of a swarm structure search method and density functional theory in this work, a quaternary compound SiBCN with graphene-like structure is found and displays a wide direct band gap as expected. The band gap is of ~2.63 eV which is just between ~2.20 and ~3.39 eV of the highlighted semiconductors SiC and GaN. Notably, the further calculation reveals that SiBCN possesses high carrier mobility with ~5.14x10^3 and ~13.07x10^3 cm^2V^-1s^-1 for electron and hole, respectively. Furthermore, the ab initio molecular dynamics simulations also show that the graphene-like structure of SiBCN can be well kept even at an extremely high temperature of 2000 K. The present work tells that designing ulticomponent silicides may be a practicable way to search for new silicon-based low-dimensional semiconductors which can match well with the previous Si-based substrates.
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Submitted 10 March, 2017;
originally announced March 2017.
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Quantum anomalous Hall effect in ferromagnetic transition metal halides
Authors:
Chengxi Huang,
Jian Zhou,
Haiping Wu,
Kaiming Deng,
Puru Jena,
Erjun Kan
Abstract:
The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb)2Te3 film in experiments with very low working temperature. Based on the su…
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The quantum anomalous Hall (QAH) effect is a novel topological spintronic phenomenon arising from inherent magnetization and spin-orbit coupling. Various theoretical and experimental efforts have been devoted in search of robust intrinsic QAH insulators. However, up to now, it has only been observed in Cr or V doped (Bi,Sb)2Te3 film in experiments with very low working temperature. Based on the successful synthesis of transition metal halides, we use first-principles calculations to predict that RuI3 monolayer is an intrinsic ferromagnetic QAH insulator with a topologically nontrivial global band gap of 11 meV. This topologically nontrivial band gap at the Fermi level is due to its crystal symmetry, thus the QAH effect is robust. Its Curie temperature, estimated to be ~360 K using Monte-Carlo simulation, is above room temperature and higher than most of two-dimensional ferromagnetic thin films. We also discuss the manipulation of its exchange energy and nontrivial band gap by applying in-plane strain. Our work adds a new experimentally feasible member to the QAH insulator family, which is expected to have broad applications in nanoelectronics and spintronics.
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Submitted 26 December, 2016; v1 submitted 26 September, 2016;
originally announced September 2016.
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Lorentz-violating type-II Dirac fermions in transition metal dichalcogenide PtTe$_2$
Authors:
Mingzhe Yan,
Huaqing Huang,
Kenan Zhang,
Eryin Wang,
Wei Yao,
Ke Deng,
Guoliang Wan,
Hongyun Zhang,
Masashi Arita,
Haitao Yang,
Zhe Sun,
Hong Yao,
Yang Wu,
Shoushan Fan,
Wenhui Duan,
Shuyun Zhou
Abstract:
Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lore…
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Topological semimetals have recently attracted extensive research interests as host materials to condensed matter physics counterparts of Dirac and Weyl fermions originally proposed in high energy physics. These fermions with linear dispersions near the Dirac or Weyl points obey Lorentz invariance, and the chiral anomaly leads to novel quantum phenomena such as negative magnetoresistance. The Lorentz invariance is, however, not necessarily respected in condensed matter physics, and thus Lorentz-violating type-II Dirac fermions with strongly tilted cones can be realized in topological semimetals. Here, we report the first experimental evidence of type-II Dirac fermions in bulk stoichiometric PtTe$_2$ single crystal. Angle-resolved photoemission spectroscopy (ARPES) measurements and first-principles calculations reveal a pair of strongly tilted Dirac cones along the $Γ$-A direction under the symmetry protection, confirming PtTe$_2$ as a type-II Dirac semimetal. The realization of type-II Dirac fermions opens a new door for exotic physical properties distinguished from type-I Dirac fermions in condensed matter materials.
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Submitted 13 July, 2016;
originally announced July 2016.
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Raman signatures of inversion symmetry breaking and structural phase transition in type-II Weyl semimetal MoTe2
Authors:
Kenan Zhang,
Changhua Bao,
Qiangqiang Gu,
Xiao Ren,
Haoxiong Zhang,
Ke Deng,
Yang Wu,
Yuan Li,
Ji Feng,
Shuyun Zhou
Abstract:
Transition metal dichalcogenide MoTe$_2$ is an important candidate for realizing the newly predicted type-IIWeyl fermions, for which the breaking of the inversion symmetry is a prerequisite. Here we present direct spectroscopic evidence for the inversion symmetry breaking in the low temperature phase of MoTe$_2$ by systematic Raman experiments and first principles calculations. We identify five la…
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Transition metal dichalcogenide MoTe$_2$ is an important candidate for realizing the newly predicted type-IIWeyl fermions, for which the breaking of the inversion symmetry is a prerequisite. Here we present direct spectroscopic evidence for the inversion symmetry breaking in the low temperature phase of MoTe$_2$ by systematic Raman experiments and first principles calculations. We identify five lattice vibrational modes which are Raman active only in noncentrosymmetric structure at low temperature. A hysteresis is also observed in the peak intensity of inversion symmetry activated Raman modes, confirming a temperature induced structural phase transition with a concomitant change in the inversion symmetry. Our results provide definitive evidence for the low temperature noncentrosymmetric T$_d$ phase from vibrational spectroscopy, and suggest MoTe$_2$ as an ideal candidate for investigating the temperature induced topological phase transition.
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Submitted 18 December, 2016; v1 submitted 16 June, 2016;
originally announced June 2016.
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Experimental observation of topological Fermi arcs in type-II Weyl semimetal MoTe2
Authors:
Ke Deng,
Guoliang Wan,
Peng Deng,
Kenan Zhang,
Shijie Ding,
Eryin Wang,
Mingzhe Yan,
Huaqing Huang,
Hongyun Zhang,
Zhilin Xu,
Jonathan Denlinger,
Alexei Fedorov,
Haitao Yang,
Wenhui Duan,
Hong Yao,
Yang Wu,
Shoushan Fan,
Haijun Zhang,
Xi Chen,
Shuyun Zhou
Abstract:
Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netore…
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Weyl semimetal is a new quantum state of matter [1-12] hosting the condensed matter physics counterpart of relativisticWeyl fermion [13] originally introduced in high energy physics. The Weyl semimetal realized in the TaAs class features multiple Fermi arcs arising from topological surface states [10, 11, 14-16] and exhibits novel quantum phenomena, e.g., chiral anomaly induced negative mag-netoresistance [17-19] and possibly emergent supersymmetry [20]. Recently it was proposed theoretically that a new type (type-II) of Weyl fermion [21], which does not have counterpart in high energy physics due to the breaking of Lorentz invariance, can emerge as topologically-protected touching between electron and hole pockets. Here, we report direct spectroscopic evidence of topological Fermi arcs in the predicted type-II Weyl semimetal MoTe2 [22-24]. The topological surface states are confirmed by directly observing the surface states using bulk-and surface-sensitive angle-resolved photoemission spectroscopy (ARPES), and the quasi-particle interference (QPI) pattern between the two putative Fermi arcs in scanning tunneling microscopy (STM). Our work establishes MoTe2 as the first experimental realization of type-II Weyl semimetal, and opens up new opportunities for probing novel phenomena such as exotic magneto-transport [21] in type-II Weyl semimetals.
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Submitted 31 July, 2016; v1 submitted 28 March, 2016;
originally announced March 2016.
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Direct observation of local Rashba spin polarization and spin-layer locking in centrosymmetric monolayer PtSe$_2$
Authors:
Wei Yao,
Eryin Wang,
Huaqing Huang,
Ke Deng,
Mingzhe Yan,
Kenan Zhang,
Taichi Okuda,
Linfei Li,
Yeliang Wang,
Hongjun Gao,
Chaoxing Liu,
Wenhui Duan,
Shuyun Zhou
Abstract:
The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin po…
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The generally accepted view that spin polarization is induced by the asymmetry of the global crystal space group has limited the search for spintronics [1] materials to non-centrosymmetric materials. Recently it has been suggested that spin polarization originates fundamentally from local atomic site asymmetries [2], and therefore centrosymmetric materials may exhibit previously overlooked spin polarizations. Here by using spin- and angle-resolved photoemission spectroscopy (spin-ARPES), we report helical spin texture induced by local Rashba effect (R-2) in centrosymmetric monolayer PtSe$_2$ film. First-principles calculations and effective analytical model support the spin-layer locking picture: in contrast to the spin splitting in conventional Rashba effect (R-1), the opposite spin polarizations induced by R-2 are degenerate in energy while spatially separated in the top and bottom Se layers. These results not only enrich our understanding of spin polarization physics, but also may find applications in electrically tunable spintronics.
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Submitted 7 March, 2016;
originally announced March 2016.
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Second generation Dirac cones and inversion symmetry breaking induced gaps in graphene/hexagonal boron nitride
Authors:
Eryin Wang,
Xiaobo Lu,
Shijie Ding,
Wei Yao,
Mingzhe Yan,
Guoliang Wan,
Ke Deng,
Shuopei Wang,
Guorui Chen,
Liguo Ma,
Jeil Jung,
Alexei V. Fedorov,
Yuanbo Zhang,
Guangyu Zhang,
Shuyun Zhou
Abstract:
Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena including the self-similar Hofstadter butterfly states. Although newly generated second generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, so far fundamental knowledge of SD…
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Graphene/h-BN has emerged as a model van der Waals heterostructure, and the band structure engineering by the superlattice potential has led to various novel quantum phenomena including the self-similar Hofstadter butterfly states. Although newly generated second generation Dirac cones (SDCs) are believed to be crucial for understanding such intriguing phenomena, so far fundamental knowledge of SDCs in such heterostructure, e.g. locations and dispersion of SDCs, the effect of inversion symmetry breaking on the gap opening, still remains highly debated due to the lack of direct experimental results. Here we report first direct experimental results on the dispersion of SDCs in 0$^\circ$ aligned graphene/h-BN heterostructure using angle-resolved photoemission spectroscopy. Our data reveal unambiguously SDCs at the corners of the superlattice Brillouin zone, and at only one of the two superlattice valleys. Moreover, gaps of $\approx$ 100 meV and $\approx$ 160 meV are observed at the SDCs and the original graphene Dirac cone respectively. Our work highlights the important role of a strong inversion symmetry breaking perturbation potential in the physics of graphene/h-BN, and fills critical knowledge gaps in the band structure engineering of Dirac fermions by a superlattice potential.
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Submitted 31 July, 2016; v1 submitted 6 March, 2016;
originally announced March 2016.
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Monolayer charge-neutral graphene on platinum with extremely weak electron-phonon coupling
Authors:
Wei Yao,
Eryin Wang,
Ke Deng,
Shuzhen Yang,
Wenyun Wu,
Alexei V. Fedorov,
Sung-Kwan Mo,
Eike F. Schwier,
Mingtian Zheng,
Yohei Kojima,
Hideaki Iwasawa,
Kenya Shimada,
Kaili Jiang,
Pu Yu,
Jia Li,
Shuyun Zhou
Abstract:
Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate…
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Epitaxial growth of graphene on transition metal substrates is an important route for obtaining large scale graphene. However, the interaction between graphene and the substrate often leads to multiple orientations, distorted graphene band structure, large doping and strong electron-phonon coupling. Here we report the growth of monolayer graphene with high crystalline quality on Pt(111) substrate by using a very low concentration of an internal carbon source with high annealing temperature. The controlled growth leads to electronically decoupled graphene: it is nearly charge neutral and has extremely weak electron-phonon coupling (coupling strength $λ$ $\approx$ 0.056) as revealed by angle-resolved photoemission spectroscopic measurements. The thermodynamics and kinetics of the carbon diffusion process is investigated by DFT calculation. Such graphene with negligible graphene-substrate interaction provides an important platform for fundamental research as well as device applications when combined with a nondestructive sample transfer technique.
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Submitted 22 October, 2015;
originally announced October 2015.