Development of a Selective Wet-Chemical Etchant for 3D Structuring of Silicon via Nonlinear Laser Lithography
Authors:
Mona Zolfaghari Borra,
Behrad Radfar,
Hisham Nasser,
Tahir Çolakoğlu,
Onur Tokel,
Ahmet Turnalı,
Merve Demirtaş,
Hande Ustunel,
Daniele Toffoli,
F. Ömer İlday,
Raşit Turan,
Ihor Pavlov,
Alpan Bek
Abstract:
Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-S…
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Recently-demonstrated high-quality three-dimensional (3D) subsurface laser processing inside crystalline silicon (c-Si) wafers opens a door to a wide range of novel applications in multidisciplinary research areas. Using this technique, a novel maskless micro-pillars with precise control on the surface reflection and coverage are successfully fabricated by etching the laser processed region of c-Si wafer. To achieve this, a particular selective wet chemical etching is developed to follow subsurface laser processing of c-Si to reveal the desired 3D structures with smooth surfaces. Here, we report the development of a novel chromium-free chemical etching recipe based on copper nitrate, which yields substantially smooth surfaces at high etch rate and selectivity on the both laser-processed Si surface and subsurface, i.e., without significant etching of the unmodified Si. Our results show that the etch rate and surface morphology are interrelated and strongly influenced by the composition of the adopted etching solution. After an extensive compositional study performed at room temperature, we identify an etchant with a selectivity of over 1600 times for laser-modified Si with respect to unmodified Si. We also support our findings using density functional theory calculations of HF and Cu adsorption energies, indicating significant diversity on the c-Si and laser-modified surfaces.
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Submitted 14 August, 2023;
originally announced September 2023.
Lower-Critical Spin-Glass Dimension from 23 Sequenced Hierarchical Models
Authors:
Mehmet Demirtas,
Asli Tuncer,
A. Nihat Berker
Abstract:
The lower-critical dimension for the existence of the Ising spin-glass phase is calculated, numerically exactly, as $d_L = 2.520$ for a family of hierarchical lattices, from an essentially exact (correlation coefficent $R^2 = 0.999999$) near-linear fit to 23 different diminishing fractional dimensions. To obtain this result, the phase transition temperature between the disordered and spin-glass ph…
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The lower-critical dimension for the existence of the Ising spin-glass phase is calculated, numerically exactly, as $d_L = 2.520$ for a family of hierarchical lattices, from an essentially exact (correlation coefficent $R^2 = 0.999999$) near-linear fit to 23 different diminishing fractional dimensions. To obtain this result, the phase transition temperature between the disordered and spin-glass phases, the corresponding critical exponent $y_T$, and the runaway exponent $y_R$ of the spin-glass phase are calculated for consecutive hierarchical lattices as dimension is lowered.
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Submitted 23 February, 2015;
originally announced February 2015.
